CN101414554B - Ion implantation method - Google Patents
Ion implantation method Download PDFInfo
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- CN101414554B CN101414554B CN2007100471211A CN200710047121A CN101414554B CN 101414554 B CN101414554 B CN 101414554B CN 2007100471211 A CN2007100471211 A CN 2007100471211A CN 200710047121 A CN200710047121 A CN 200710047121A CN 101414554 B CN101414554 B CN 101414554B
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Abstract
The invention discloses an ion implantation method, and the implantation is carried out by the sequence from low to high according to the energy level of the implanted ions. For example, the ion implantation is firstly carried out in a threshold voltage control region; the ion implantation is then carried out in a channel region; and the ion implantation is finally carried out in a well region. The ion implantation method adjusts the sequence of the ion implantation and firstly implants the ions with the lower energy, thereby reducing the adverse impacts caused by the implantation of high-energy ions and improving the quality of a device.
Description
Technical field
The present invention relates to manufacture of semiconductor, more particularly, the ion that relates in the manufacture of semiconductor injects.
Background technology
In the process of making semiconductor device, normally the mode of injecting by ion realizes various device architectures.Because shape, position, the size of device are all inequality, therefore the energy of ions of being injected is also different.In present technological process, normally carry out the injection of ion according to energy order from high to low, device promptly the darkest from the position, the bottom begins to make.Such as, make following several parts: well region (Well), channel region (Channel) and threshold voltage control region (VT), in the existing processes flow process, be at first to inject well region (Well) with highest energy, afterwards, be channel region (Channel), be only threshold voltage control region (VT) at last with minimum energy with medium energy.Certainly, before carrying out the ion injection, deposition one photoresist layer (PR) prevent that ion is injected in the incorrect zone earlier.
According to this kind process, in fact can produce following adverse effect:
1) is easy to generate and wears effect then.When energetic ion is injected in the silicon substrate,, is easy to produce and wears effect then if there be not stopping of noncrystalline layer.Though the process of injecting at ion can produce some noncrystalline layers on the surface of silicon substrate because what at first inject is energetic ion, its ability that produces noncrystalline layer a little less than, and the energy of self is higher, so still is easy to generate and wears effect then.
2) there is more serious ionic soil situation.The zone that ion injects is controlled by lithography layer, but photoresist layer can change in the process of carrying out the ion injection, and the degree that photoresist layer changes is directly proportional with the injection energy of ions.If what at first inject is energetic ion, the variation of photoresist layer will be very remarkable so, and afterwards, photoresist layer may lose efficacy, and no longer had barrier functionality, made the ion of follow-up injection can be injected into undesirable zone, cause the situation of ionic soil to produce.
Summary of the invention
The present invention is directed to above-mentioned problem and adjusted the order that ion injects, carry out the injection of ion according to energy order from low to high.
According to the present invention, a kind of ion injection method is provided, the height according to injecting ion energy injects according to order from low to high.
According to an embodiment, this method comprises following step: at first threshold voltage control region is carried out ion and inject; Again passage area being carried out ion injects; At last well region being carried out ion injects.Wherein, the energy of ions of injection is: the ion of the ion＜injection well region in the ion＜zone, injection channel of injection threshold voltage control region.
With isolation structure of shallow trench STI is reference, then injects the degree of depth of the ion degree of depth of threshold voltage control region less than isolation structure of shallow trench STI; The ion degree of depth in zone, injection channel equals the degree of depth of isolation structure of shallow trench STI; Inject the ion degree of depth of well region and surround isolation structure of shallow trench STI.
When threshold voltage control region is carried out the ion injection, form noncrystalline layer at silicon face.
This method is deposition one photoresist layer before carrying out the ion injection also, and the thickness of this photoresist layer and shape are determined according to the energy of ions that is injected into threshold voltage control region, passage area and well region.
In order to eliminate energetic ion, passage area is carried out energy and concentration that ion injects determine according to the degree of depth and the shape of the threshold voltage control region that has injected to the destruction of injecting structure before; And well region is carried out energy and concentration that ion injects determine according to the degree of depth and the shape of threshold voltage control region that has injected and passage area.
The present invention adjusts the order that ion injects, and will have more low-energy ion and at first inject, and the adverse effect that makes the energetic ion injection bring reduces, and improves the quality of device.
Description of drawings
The above and other features of the present invention, character and advantage will become more obvious by the description below in conjunction with drawings and Examples, in the accompanying drawings, identical Reference numeral is represented identical feature all the time, wherein,
Fig. 1 shows the flow chart according to the ion injection method of one embodiment of the invention;
It is the ion implanted region territory of reference that Fig. 2 shows with isolation structure of shallow trench STI.
Embodiment
Based on following consideration, the present invention finds that the order of adjusting the ion injection can overcome defective of the prior art effectively:
1) more low-energy ion produces noncrystalline layer on the surface of silicon substrate easily, and noncrystalline layer can reduce the possibility that effect takes place to wear then ion effectively.At first inject low-energy ion, help the formation of noncrystalline layer more, like this, when carrying out the injection of energetic ion afterwards, this noncrystalline layer just can play the effect that prevents to wear then effect.
2) influence of more low-energy ion pair photoresist layer is also smaller, is not easy to make photoresist layer to lose efficacy, thereby reduces the possibility of ionic soil.
So the present invention proposes a kind of ion injection method, the height according to injecting ion energy injects according to order from low to high.
Fig. 1 shows the embodiment according to the concrete application of an ion injection method of the present invention, and this method 100 comprises:
102. at first threshold voltage control region (VT) being carried out ion injects;
104. again passage area (Channel) being carried out ion injects;
106. at last well region (Well) being carried out ion injects.
Above-mentioned each regional energy of ions pass that gets that is injected into is:
The ion of the ion＜injection well region in the ion＜zone, injection channel of injection threshold voltage control region.
As top said, the ion that energy is lower can produce noncrystalline layer on the surface of silicon substrate.Therefore, according to embodiment shown in Figure 1, carry out the process that ion injects at step 102 pair threshold voltage control region (VT), can form noncrystalline layer on the surface of silicon substrate, the possibility that the ion generation with higher-energy that these noncrystalline layers will reduce to be injected in the follow-up step 104,106 is worn then.Certainly, passage area (Channel) and well region (Well) are being carried out also can producing certain noncrystalline layer when ion injects, but because these energy of ions are higher, the noncrystalline layer that they can produce is less relatively.
The present invention can carry out depositing a photoresist layer before the ion injection equally, and the thickness of this photoresist layer and shape are determined according to the energy of ions that is injected into threshold voltage control region, passage area and well region.Because it is ion injection of the present invention is to inject according to order from high to low according to ion energy in proper order, therefore smaller for the influence of photoresist layer.The influence of the ion pair photoresist layer that at first energy of Zhu Ruing is lower is more weak, when injecting energetic ion at last, owing to be last step, no longer include ion afterwards and injects, even change has taken place photoresist layer, also can not cause the situation of ionic soil.So the change that photoresist layer of the present invention takes place in injection process can not be considered, the thickness of this photoresist layer and shape can pre-determine according to the energy of ions that is injected into threshold voltage control region, passage area and well region.
Though energetic ion can cause certain destruction to the ionic structure that injects before, result of experiment shows, injects energy of ions and concentration by adjusting, and can eliminate the influence that this destruction is caused.So in the ion injection method of the present invention, the degree of depth and the shape in the ion zone that the back energy of ions injected of one step and concentration all can be injected according to its that step are determined.Such as, passage area is carried out the energy and the concentration of ion injection and determine according to the degree of depth and the shape of the threshold voltage control region that has injected; And well region is carried out energy and concentration that ion injects determine according to the degree of depth and the shape of threshold voltage control region that has injected and passage area.
With reference to figure 2, it shows with isolation structure of shallow trench (STI) is the ion implanted region territory of reference.Inject the degree of depth of the ion degree of depth of threshold voltage control region (VT) less than isolation structure of shallow trench (STI); The ion degree of depth in zone, injection channel (Channel) equals the degree of depth of isolation structure of shallow trench (STI); And the ion degree of depth of injecting well region (Well) is surrounded isolation structure of shallow trench (STI).
The present invention adjusts the order that ion injects, and will have more low-energy ion and at first inject, and the adverse effect that makes the energetic ion injection bring reduces, and improves the quality of device.
The foregoing description provides to being familiar with the person in the art and realizes or use of the present invention; those skilled in the art can be under the situation that does not break away from invention thought of the present invention; the foregoing description is made various modifications or variation; thereby protection scope of the present invention do not limit by the foregoing description, and should be the maximum magnitude that meets the inventive features that claims mention.
Claims (7)
1. the ion injection method in the semiconductor technology is characterized in that, the height according to injecting ion energy injects according to order from low to high.
2. ion injection method as claimed in claim 1 is characterized in that, comprising:
At first threshold voltage control region being carried out ion injects;
Again passage area being carried out ion injects;
At last well region being carried out ion injects.
3. ion injection method as claimed in claim 2 is characterized in that, the energy of ions of described injection is:
The ion of the ion＜injection well region in the ion＜zone, injection channel of injection threshold voltage control region.
4. ion injection method as claimed in claim 3 is characterized in that,
The ion degree of depth of described injection threshold voltage control region is less than the degree of depth of isolation structure of shallow trench STI;
The ion degree of depth in zone, described injection channel equals the degree of depth of isolation structure of shallow trench STI;
The degree of depth of the ion of described injection well region is surrounded isolation structure of shallow trench STI.
5. ion injection method as claimed in claim 4 is characterized in that,
When threshold voltage control region is carried out the ion injection, form noncrystalline layer at silicon face.
6. ion injection method as claimed in claim 5 is characterized in that, also comprises
Deposition one photoresist layer before carrying out the ion injection, the thickness of described photoresist layer and shape are determined according to the energy of ions that is injected into threshold voltage control region, passage area and well region.
7. ion injection method as claimed in claim 6 is characterized in that,
Describedly passage area is carried out energy and concentration that ion injects determine according to the degree of depth and the shape of the threshold voltage control region that has injected; And
Describedly well region is carried out energy and concentration that ion injects determine according to the degree of depth and the shape of threshold voltage control region that has injected and passage area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100471211A CN101414554B (en) | 2007-10-17 | 2007-10-17 | Ion implantation method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100471211A CN101414554B (en) | 2007-10-17 | 2007-10-17 | Ion implantation method |
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| CN101414554A CN101414554A (en) | 2009-04-22 |
| CN101414554B true CN101414554B (en) | 2010-04-14 |
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| CN2007100471211A Active CN101414554B (en) | 2007-10-17 | 2007-10-17 | Ion implantation method |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103632936B (en) * | 2012-08-20 | 2016-02-17 | 中芯国际集成电路制造(上海)有限公司 | The method of ion implantation |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2122437U (en) * | 1991-09-14 | 1992-11-18 | 北京师范大学 | Strong flow ion implantation machine with multiple ionic sources |
| CN1143830A (en) * | 1995-03-22 | 1997-02-26 | 现代电子产业株式会社 | Method of making MOS transistor having LDD structure |
| CN1437765A (en) * | 2000-05-25 | 2003-08-20 | 先进微装置公司 | Method for controlling well leakage for trench isolations of differing depths |
| CN1467805A (en) * | 2002-12-30 | 2004-01-14 | 中芯国际集成电路制造（上海）有限公 | Method and system for monitoring ion implantation to semiconductor basic material |
-
2007
- 2007-10-17 CN CN2007100471211A patent/CN101414554B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2122437U (en) * | 1991-09-14 | 1992-11-18 | 北京师范大学 | Strong flow ion implantation machine with multiple ionic sources |
| CN1143830A (en) * | 1995-03-22 | 1997-02-26 | 现代电子产业株式会社 | Method of making MOS transistor having LDD structure |
| CN1437765A (en) * | 2000-05-25 | 2003-08-20 | 先进微装置公司 | Method for controlling well leakage for trench isolations of differing depths |
| CN1467805A (en) * | 2002-12-30 | 2004-01-14 | 中芯国际集成电路制造（上海）有限公 | Method and system for monitoring ion implantation to semiconductor basic material |
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| CN101414554A (en) | 2009-04-22 |
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Effective date of registration: 20111121 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |