KR100374455B1 - 평면 트렌치의 제조 방법 - Google Patents

평면 트렌치의 제조 방법 Download PDF

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Publication number
KR100374455B1
KR100374455B1 KR10-1999-7008655A KR19997008655A KR100374455B1 KR 100374455 B1 KR100374455 B1 KR 100374455B1 KR 19997008655 A KR19997008655 A KR 19997008655A KR 100374455 B1 KR100374455 B1 KR 100374455B1
Authority
KR
South Korea
Prior art keywords
trench
layer
insulating
polysilicon
polysilicon layer
Prior art date
Application number
KR10-1999-7008655A
Other languages
English (en)
Korean (ko)
Other versions
KR20010005591A (ko
Inventor
쇠더배그앤더스칼시버트
외그렌닐스오라
스죄딘언스트해칸
잭크리슨오로프미카엘
Original Assignee
텔레폰악티에볼라겟엘엠에릭슨(펍)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 텔레폰악티에볼라겟엘엠에릭슨(펍) filed Critical 텔레폰악티에볼라겟엘엠에릭슨(펍)
Publication of KR20010005591A publication Critical patent/KR20010005591A/ko
Application granted granted Critical
Publication of KR100374455B1 publication Critical patent/KR100374455B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Element Separation (AREA)
  • Drying Of Semiconductors (AREA)
KR10-1999-7008655A 1997-03-26 1998-03-23 평면 트렌치의 제조 방법 KR100374455B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE9701154A SE520115C2 (sv) 1997-03-26 1997-03-26 Diken med plan ovansida
SE9701154-8 1997-03-26
PCT/SE1998/000528 WO1998043293A1 (en) 1997-03-26 1998-03-23 Method for producing planar trenches

Publications (2)

Publication Number Publication Date
KR20010005591A KR20010005591A (ko) 2001-01-15
KR100374455B1 true KR100374455B1 (ko) 2003-03-04

Family

ID=20406360

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1999-7008655A KR100374455B1 (ko) 1997-03-26 1998-03-23 평면 트렌치의 제조 방법

Country Status (9)

Country Link
EP (1) EP1018156A1 (zh)
JP (1) JP2001519097A (zh)
KR (1) KR100374455B1 (zh)
CN (1) CN1110848C (zh)
AU (1) AU6753998A (zh)
CA (1) CA2285627A1 (zh)
SE (1) SE520115C2 (zh)
TW (1) TW356579B (zh)
WO (1) WO1998043293A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6498383B2 (en) * 2001-05-23 2002-12-24 International Business Machines Corporation Oxynitride shallow trench isolation and method of formation
US6461936B1 (en) * 2002-01-04 2002-10-08 Infineon Technologies Ag Double pullback method of filling an isolation trench
JP2008028357A (ja) 2006-07-24 2008-02-07 Hynix Semiconductor Inc 半導体素子及びその製造方法
JP4717122B2 (ja) * 2009-01-13 2011-07-06 三菱電機株式会社 薄膜太陽電池の製造方法
CN102468176B (zh) * 2010-11-19 2013-12-18 上海华虹Nec电子有限公司 超级结器件制造纵向区的方法
CN103822735A (zh) * 2012-11-16 2014-05-28 无锡华润上华半导体有限公司 一种压力传感器用晶片结构及该晶片结构的加工方法
CN107507773B (zh) * 2016-06-14 2021-09-17 格科微电子（上海）有限公司 优化cmos图像传感器晶体管结构的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2207281B (en) * 1987-07-24 1992-02-05 Plessey Co Plc A method of providing refilled trenches
US5175122A (en) * 1991-06-28 1992-12-29 Digital Equipment Corporation Planarization process for trench isolation in integrated circuit manufacture
US5561073A (en) * 1992-03-13 1996-10-01 Jerome; Rick C. Method of fabricating an isolation trench for analog bipolar devices in harsh environments
US5627092A (en) * 1994-09-26 1997-05-06 Siemens Aktiengesellschaft Deep trench dram process on SOI for low leakage DRAM cell
US5683945A (en) * 1996-05-16 1997-11-04 Siemens Aktiengesellschaft Uniform trench fill recess by means of isotropic etching

Also Published As

Publication number Publication date
CN1257609A (zh) 2000-06-21
AU6753998A (en) 1998-10-20
CA2285627A1 (en) 1998-10-01
SE9701154D0 (sv) 1997-03-26
WO1998043293A1 (en) 1998-10-01
JP2001519097A (ja) 2001-10-16
CN1110848C (zh) 2003-06-04
TW356579B (en) 1999-04-21
SE520115C2 (sv) 2003-05-27
SE9701154L (sv) 1998-09-27
EP1018156A1 (en) 2000-07-12
KR20010005591A (ko) 2001-01-15

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