GB2207281B - A method of providing refilled trenches - Google Patents

A method of providing refilled trenches

Info

Publication number
GB2207281B
GB2207281B GB8717612A GB8717612A GB2207281B GB 2207281 B GB2207281 B GB 2207281B GB 8717612 A GB8717612 A GB 8717612A GB 8717612 A GB8717612 A GB 8717612A GB 2207281 B GB2207281 B GB 2207281B
Authority
GB
United Kingdom
Prior art keywords
providing
refilled trenches
refilled
trenches
providing refilled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB8717612A
Other versions
GB8717612D0 (en
GB2207281A (en
Inventor
Shane Duncan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Co Ltd
Original Assignee
Plessey Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd
Priority to GB8717612A priority Critical patent/GB2207281B/en
Publication of GB8717612D0 publication Critical patent/GB8717612D0/en
Priority to JP50622488A priority patent/JPH02500153A/en
Priority to EP19880906932 priority patent/EP0324020A1/en
Priority to PCT/GB1988/000597 priority patent/WO1989001236A1/en
Publication of GB2207281A publication Critical patent/GB2207281A/en
Application granted granted Critical
Publication of GB2207281B publication Critical patent/GB2207281B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
GB8717612A 1987-07-24 1987-07-24 A method of providing refilled trenches Expired - Fee Related GB2207281B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB8717612A GB2207281B (en) 1987-07-24 1987-07-24 A method of providing refilled trenches
JP50622488A JPH02500153A (en) 1987-07-24 1988-07-22 How to provide refilled gutters
EP19880906932 EP0324020A1 (en) 1987-07-24 1988-07-22 A method of providing refilled trenches
PCT/GB1988/000597 WO1989001236A1 (en) 1987-07-24 1988-07-22 A method of providing refilled trenches

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8717612A GB2207281B (en) 1987-07-24 1987-07-24 A method of providing refilled trenches

Publications (3)

Publication Number Publication Date
GB8717612D0 GB8717612D0 (en) 1987-09-03
GB2207281A GB2207281A (en) 1989-01-25
GB2207281B true GB2207281B (en) 1992-02-05

Family

ID=10621273

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8717612A Expired - Fee Related GB2207281B (en) 1987-07-24 1987-07-24 A method of providing refilled trenches

Country Status (4)

Country Link
EP (1) EP0324020A1 (en)
JP (1) JPH02500153A (en)
GB (1) GB2207281B (en)
WO (1) WO1989001236A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2207281B (en) * 1987-07-24 1992-02-05 Plessey Co Plc A method of providing refilled trenches
US4931409A (en) * 1988-01-30 1990-06-05 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device having trench isolation
US5244827A (en) * 1991-10-31 1993-09-14 Sgs-Thomson Microelectronics, Inc. Method for planarized isolation for cmos devices
US5472022A (en) * 1993-11-02 1995-12-05 Genentech, Inc. Injection pen solution transfer apparatus and method
US5435888A (en) * 1993-12-06 1995-07-25 Sgs-Thomson Microelectronics, Inc. Enhanced planarization technique for an integrated circuit
US6107194A (en) * 1993-12-17 2000-08-22 Stmicroelectronics, Inc. Method of fabricating an integrated circuit
US5439846A (en) * 1993-12-17 1995-08-08 Sgs-Thomson Microelectronics, Inc. Self-aligned method for forming contact with zero offset to gate
US6284584B1 (en) 1993-12-17 2001-09-04 Stmicroelectronics, Inc. Method of masking for periphery salicidation of active regions
SE520115C2 (en) * 1997-03-26 2003-05-27 Ericsson Telefon Ab L M The ditch with flat top
US6063693A (en) * 1998-03-23 2000-05-16 Telefonaktiebolaget Lm Ericsson Planar trenches
US9142400B1 (en) 2012-07-17 2015-09-22 Stc.Unm Method of making a heteroepitaxial layer on a seed area

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986002777A1 (en) * 1984-11-01 1986-05-09 Ncr Corporation Process for forming isolation regions in a semiconductor substrate
WO1989001236A1 (en) * 1987-07-24 1989-02-09 Plessey Overseas Limited A method of providing refilled trenches

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4385975A (en) * 1981-12-30 1983-05-31 International Business Machines Corp. Method of forming wide, deep dielectric filled isolation trenches in the surface of a silicon semiconductor substrate
JPS60121737A (en) * 1983-12-06 1985-06-29 Nec Corp Element isolating method for semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986002777A1 (en) * 1984-11-01 1986-05-09 Ncr Corporation Process for forming isolation regions in a semiconductor substrate
WO1989001236A1 (en) * 1987-07-24 1989-02-09 Plessey Overseas Limited A method of providing refilled trenches
EP0324020A1 (en) * 1987-07-24 1989-07-19 Plessey Semiconductors Limited A method of providing refilled trenches

Also Published As

Publication number Publication date
GB8717612D0 (en) 1987-09-03
JPH02500153A (en) 1990-01-18
EP0324020A1 (en) 1989-07-19
GB2207281A (en) 1989-01-25
WO1989001236A1 (en) 1989-02-09

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940724