CN1100346C - 引线框和片式半导体封装制造方法 - Google Patents

引线框和片式半导体封装制造方法 Download PDF

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CN1100346C
CN1100346C CN97100725A CN97100725A CN1100346C CN 1100346 C CN1100346 C CN 1100346C CN 97100725 A CN97100725 A CN 97100725A CN 97100725 A CN97100725 A CN 97100725A CN 1100346 C CN1100346 C CN 1100346C
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lead
chip
wire
wafer
lead frame
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CN1166052A (zh
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金东俞
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SK Hynix Inc
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LG Semicon Co Ltd
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Abstract

制造片式半导体封装的方法包括下列步骤：把引线框牢固地对准设置于晶片上；进行引线键合工艺，用金属线电连接有台阶的每根引线和晶片上多个中心焊盘中相应的一个；进行化合物模制工艺，模制包括金属线和引线在内的区域，但使每根有弯折引线的最上表面外露；在每根引线的外露部分上镀敷导电金属材料；及锯切晶片，形成分立半导体芯片。

Description

引线框和片式半导体封装制造方法
技术领域
本发明涉及半导体封装制造方法，特别涉及引线框和片式半导体封装制造方法，用于简化制造步骤，因此易于批量生产。
背景技术
近年来，随着半导体封装元件的日益小型化，半导体封装需要小型化和减薄，所以人们研制了LOC(芯片上引线)型半导体封装，并将其投入批量生产。
图1展示了一种常规LOC型半导体封装，如图1所示，在垫片1上安装有半导体芯片2，芯片上除中心部位外形成有粘性覆盖膜4，膜4上设置有多根引线3，引线3有多个弯折点，并从引线框9伸出。在芯片2表面中心部位，形成有多个芯片焊盘5，每个焊盘通过金属线6与相应的一根引线3电连接。在包括引线3、粘性膜4、芯片焊盘5和金属线6的芯片2上模制环氧树脂化合物7，其中引线3的前部邻近引线框9，该部分的上表面外露。
下面，参照图2A至2E，说明这样构成的常规片式半导体封装的制造方法。
首先，如图2A所示，进行芯片键合工艺，以便在从管芯基座框8延伸的垫片1上安装半导体芯片2。管芯基座框8上有芯片2，该框与引线框9对准，引线框9适于中心焊盘键合，并且其上延伸出多根有多个弯折的引线3。然后，进行焊接工艺，连接管芯基座框8和引线框9。
如图2B所示，用金属线6进行引线键合工艺，电连接形成在芯片2表面中心上的每个芯片焊盘5与相应的引线3。
然后，如图2C所示，通过焊接连接到框8、9上的芯片2与形成在下模板12表面上形成的槽13对准。接着，把上模板11贴到下模板12上，再把模制化合物7注入通风孔12a中。
如图2D所示，在完成了模制工艺后，模板11、12与框8、9是分离的。然后进行修整工艺，切掉从模制封装体7中外突出的部分，从而完成片式半导体封装，引线3从封装体7的底表面外露。
为了制造常规片式半导体封装，在进行管芯接合之前，需先由晶片20分离出分立半导体芯片2。然后将分离的芯片2对准封接在管芯基座框8的垫片1上，以便进行引线键合。
然而，重复且复杂的制造工艺使得分别把芯片贴到垫片上的操作要花费大量时间。另外，复杂的工艺还会导致芯片外伤，因而会妨碍生产率的提高。
发明内容
因此，本发明的目的是提供一种制造片式半导体封装的方法，能够通过简化制造工艺来提高生产率。
本发明的另一个目的是提供一种引线框，用于制造本发明的片式半导体封装。
根据本发明，实现上述目的的制造片式半导体封装的方法包括下列步骤：把引线框牢固地对准设置于晶片上，其中引线框包括多根分别相应于晶片上芯片划分线的引线支撑条，多根有台阶和弯折的引线从每根支撑条延伸一定距离，其中晶片包括多个中心焊盘型芯片，各芯片被彼此划分开，以便彼此间分离；进行引线键合工艺，用金属线电连接每根引线和相应的一个晶片中心焊盘；进行化合物模制工艺，模制包括金属线和引线在内的区域，同时使每根有弯折引线的最上表面外露；在每根引线的外露部分上镀敷导电金属材料；及锯切晶片，形成分立半导体芯片。
另外，半导体芯片封装的引线框包括：多根相应于晶片上相应芯片划分线的引线支撑条；相互面对地从每根引线支撑条向每个芯片的垂直中线延伸的多根引线，其中，每根引线皆具有一个以上的台阶或弯折。
附图说明
图1是常规片式半导体封装的剖面图；
图2A是说明管芯键合及引线框焊接工艺的图1所示封装的分解透视图；
图2B是展示引线键合步骤的图2所示已组装封装的透视图；
图2C是展示化合物模制步骤的常规片式半导体封装制造工艺的透视图；
图2D是已完成的常规半导体封装的透视图；
图2E是已完成的常规半导体封装的底视图；
图3是带有芯片上的多个中心焊盘的半导体晶片的平面图；
图4是根据本发明的引线框的平面图；
图5A是安装在半导体晶片上的本发明引线框的平面图；
图5B是展示本发明的引线键合工艺的平面图；
图5C是沿图5B中A-A线所取的剖面图；
图5D是展示模制工艺的本发明芯片封装的剖面图；
图5E是展示镀敷工艺的本发明芯片封装的剖面图。
具体实施方式
下面将参照各附图说明本发明制造片式半导体封装的方法。
如图3所示，把晶片20划成网格状，划分出多个管芯或芯片21，此后其中每个芯片皆可以从其上分离开。在每个芯片21的中心部位对准式地形成有多个中心焊盘21a。
参见图4，沿引线框30的行和列线上，延伸着支撑多根引线32的引线支撑条31。引线支撑条31是相应于图3所示的晶片20的芯片划分线分别设置的。
由引线支撑条31包围着的每个格子内，引线32分别从每列引线支撑条31向每个格子的垂直中心线延伸一定距离，因而容易封装中心焊盘型半导体芯片。另外，每根引线32有不止一个弯折或台阶，每根引线支撑条31的宽度最好小于晶片20的厚度。
下面将说明本发明制造片式半导体封装的方法。
首先，如图5A所示，把图4所示引线框30安装在图3所示的晶片20上，使引线支撑条31分别与相应的每根图3所示芯片划分线对准，然后借助粘性覆盖膜40把框30和晶片20牢固地贴在一起，同时每个芯片21之上延伸的多根引线32与每个芯片21中心部位排列的每侧中心焊盘21a对准。
然后，如图5B和5C所示，利用金属线50进行引线键合工艺，电连接每根引线32和相应的一个中心焊盘21a。
然后，如图5D所示，利用环氧树脂模制化合物60进行模制工艺，密封每个包括金属线50、中心焊盘21a和引线32的半导体封装，但每根皆具有台阶或弯折的引线32的最上表面外露。
如图5E所示，进行镀敷工艺，利用导电金属材料70，在每根外露的引线32上作电镀，其中导电金属材料70可以是焊料。
最后，沿每根引线框30的引线支撑条31进行锯切工艺，形成分立的半导体芯片，从而完成本发明的片式半导体芯片封装，此时，由于形成的每根引线支撑条31的宽度小于划开的晶片20的厚度，所以完全可以在锯切工艺期间将每根引线支撑条消除掉。
如上所述，本发明的制造片式半导体封装的方法，把引线框牢固地装在晶片上，随后进行引线键合工艺和化合物模制工艺，最后将晶片分成分立芯片，从而减少了必要的制造步骤，因此容易进行批量生产。

Claims (8)

1.一种制造片式半导体封装的方法，包括下列步骤：
把引线框牢固地对准设置于晶片上，其中引线框包括多根分别相应于晶片上芯片划分线的引线支撑条，多根有台阶和弯折的引线从每根支撑条延伸一定距离，其中晶片包括多个中心焊盘型芯片，各芯片被彼此划分开，以便彼此间分离；
进行引线键合工艺，用金属线电连接每根引线和相应的一个晶片中心焊盘；
进行化合物模制工艺，模制包括金属线和引线在内的区域，同时外露每根引线的最上表面；
在每根引线的外露部分上镀敷导电金属材料；及
锯切晶片，形成分立半导体芯片。
2.根据权利要求1的方法，其特征为，用电镀技术进行镀敷步骤。
3.根据权利要求1的方法，其特征为，施加粘性覆盖膜，连接引线框与晶片。
4.根据权利要求1的方法，其特征为，模制步骤用环氧树脂化合物。
5.根据权利要求1的方法，其特征为，导电金属材料是焊料。
6.一种半导体芯片封装的引线框，包括：
多根对应于晶片上相应芯片划分线的引线支撑条；及
相互面对地从每根引线支撑条伸出并接近其间的每个芯片的垂直中线的多根引线，其中，每根引线皆具有一个以上的台阶或弯折。
7.根据权利要求6的方法，其特征为，多根引线支撑条构成矩形格子。
8.根据权利要求6的方法，其特征为，每根引线支撑条的宽度皆小于晶片厚度。
CN97100725A 1996-05-17 1997-02-26 引线框和片式半导体封装制造方法 Expired - Fee Related CN1100346C (zh)

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KR0179920B1 (ko) 1999-03-20
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US5926380A (en) 1999-07-20
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