CN1412843A - 引线框架、其制造方法及使用它的半导体器件的制造方法 - Google Patents

引线框架、其制造方法及使用它的半导体器件的制造方法 Download PDF

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CN1412843A
CN1412843A CN02147567A CN02147567A CN1412843A CN 1412843 A CN1412843 A CN 1412843A CN 02147567 A CN02147567 A CN 02147567A CN 02147567 A CN02147567 A CN 02147567A CN 1412843 A CN1412843 A CN 1412843A
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die
lead
underframe
cushion
lead frame
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松泽秀树
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Shinko Electric Industries Co Ltd
Shinko Electric Co Ltd
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Abstract

一种在无引线封装件(半导体器件)如四方偏平无引线封装件(QFN)中使用的引线框架包括一底框,该底框具有分别界定而相应于每个安装在其上的半导体元件的模垫和围绕相应模垫布置的多个引线,一粘合带贴在底框上以便覆盖每个模垫的一个表面侧和围绕相应模垫布置的多个引线。相应于每个模垫的所述多个引线在最后分成半导体器件的区域内以梳状从相应模垫向朝外的方向延伸分别与模垫分离。引线框架还包括多个分别连接于每个模垫的支承杆。支承杆由粘合带支承,并延伸得接近于最后分成半导体器件的区域的周边部分。

Description

引线框架、其制造方法及 使用它的半导体器件的制造方法
技术领域
本发明涉及安装半导体元件的封装件中使用的引线框架。更具体来说,本发明涉及无引线封装件(半导体器件)如四方扁平无引线封装件(QFN)中使用的引线框架,该引线框架具有适于提高在用树脂密封封装件的步骤后的切块步骤时的可加工性的引线形状,本发明还涉及制造上述引线框架的方法,以及制造使用这种引线框架的半导体器件的方法。
背景技术
图1A和图1B示意地表示在无引线封装件如QFN中使用的现有技术的引线框架的结构。在所述附图中,图1A表示引线框架一部分的结构的平面图,图1B表示沿图1A中B-B′线的引线框架剖面结构。
在图1A和图1B中,标号10表示带状引线框架的一部分,该引线框架基本由一底框11构成,该底框是通过蚀刻金属板制成的。底框11包括一框架结构,该框架结构由一外框(外框部分)12和布置在外框12内部的基体中的内框13(也称为段杆(section bars))。在外框12中设有引导孔14,在输送引线框架10时,所述引导孔与输送器机构接合。在由框12和13限定的开口的中心设有模垫15,在模垫上安装半导体元件。每个模垫15由四根从相应框12和13的四角延伸的支承杆16支承并连接于外框12。另外,引线17以梳状从各框12和13伸向模垫15。一粘合带18贴在底框11的背面。另外,虚线CL表示在最终在组装过程中将引线框架10分成各封装件时的分割线。虽然在图1A和图1B中并没有特别画出,所有段杆(内框13)在将引线框架10分成封装件时都被除去。
当使用具有上述结构的引线框架10组装封装件时,其基本方法包括以下步骤:将半导体元件安装在引线框架的模垫上(小片接合),用粘合线将半导体元件的电极电连接于引线框架的引线上(线接合),借助模制树脂密封半导体元件、粘合线等(模制),在剥掉粘合带后用切块机或类似装置将用模制树脂密封的引线框架分成封装件(半导体器件)(切块)等。另外,作为模制的类型,有一种单独模制法,其中半导体元件是用树脂单独密封的,还有一种批量模制法,其中半导体元件是用树脂一起密封的,由于与批量模制法相比较,单独模制法难于高效地组装,因而批量模制法是近年来的主流。
按照上述传统的引线框架的结构,在使用上述批量模制法的封装件如QFN的组装过程中,在将引线框架10切成封装件时,切块机应同时沿分割线CL(图1A)切割金属(引线17)和模制树脂。
但是,大多数切块机本来适于切割树脂,因此,在同时切割相对较软的树脂和比树脂硬的金属的情形中,存在切片机刀片迅速磨损、切块迅速下降,因而可加工性降低等问题。
另外,由于金属(引线17)和模制树脂同时被切割,因而金属“毛刺”频繁地在引线17的切割方向的下游侧产生。因此,也存在生产率或产量下降的问题。
另外,还有一个缺陷是,在切块机刀片施加应力时,引线从树脂剥离,这是由于树脂和金属之间硬度差的缘故。
另外,通常的作法是在运输前检查每个封装件(半导体器件)。在运输前的检查中,较方便的是将切块前状态中的引线框架放置在检验仪器上进行检查,而不是连续地将分成封装件的单独产品放置在检查仪器上进行检查。另外,对切块前状态的引线框架进行检查的方法更为省时,这是由于一次能够检查大量半导体器件的缘故。
但是,按照现有技术的引线框架的结构(图1A),相应于两个相邻模垫15的有关引线17是通过段杆13彼此电连接的(换言之,两相邻的封装件彼此电连接)。因此,存在的缺陷在于,在封装件组装过程中,在引线框架切块之前不能检查单独的封装件。
发明内容
本发明的目的是提供一种引线框架,它能够克服在半导体器件组装过程中切块时产生毛刺、引线从树脂分开的缺陷、能够提高块切的可加工性、生产率和产量,还能够在切块前对单独的半导体器件进行检查,本发明的目的还在于提供一种制造这种引线框架的方法,以及制造使用这种引线框架的半导体器件的方法。
为了实现上述目的,按照本发明的一个方面,提供一种引线框架,它包括:一个底框,该底框包括分别相应于准备安装在其上的每个半导体元件界定的模垫,以及多个围绕相应模垫布置的引线;一条粘合带,该粘合带贴在所述底框上,以便覆盖每个模垫的一个表面侧和所述多个围绕相应模垫布置的引线;以及所述多个相应于每个模垫的引线以梳状在准备最后分成一个半导体器件的区域内从相应的模垫向朝外的方向延伸,分别与所述模垫分开。
按照本发明这一方面的引线框架的构造,相应于每个模垫的单独的引线只存在于被最终从底框分开的区域内。换言之,虽然用于彼此连接引线的金属部分(图1A的段杆13)存在于现有技术的引线框架中的分割线界定的区域(准备与引线框架分开的部分)内,但是,这样的金属部分在按照本发明的引线框架的构造中并不存在。
因此,在封装件(半导体器件)的组装过程中将引线框架切成单独的封装件的步骤中,不存在象现有技术中那样的必须同时切割金属(引线)和模制树脂的不便。也就是说,能够只切割模制树脂。因此,能够抑制切块机刀片的磨损、提高切块速度,从而提高在切块过程中的可加工性。这些优点有助于提高生产率和产量。
另外,由于能够只切割模制树脂,因而能够克服现有技术中产生毛刺或引线与树脂分开等缺陷。
另外,相应于每个模垫的各引线只存在于分割线所界定的区域(准备与引线框架分开的部分)内。因此,能够克服现有技术的引线框架(图1A)中的那种相应于两相邻模垫的有关引线通过金属部分彼此电连接的状态。换言之,可以实现两相邻封装件彼此电绝缘的状态。因此,能够检查在切块前状态中的单独的半导体器件。
另外,按照本发明的另一个方面,提供一种制造引线框架的方法,它包括以下步骤:通过蚀刻或冲压金属板形成一底框,该底框布置有为了各个准备安装在其上的半导体元件设置的模垫和多个连接于相应模垫,且以梳状向朝外方向延伸的引线;通过半蚀刻在所述底框的一个表面上的所述多个引线连接于相应模垫的部分上形成凹部;将一粘合带贴在所述底框的形成所述凹部的那侧的表面上;以及切割所述多个引线的形成所述凹部的部分。
另外,按照本发明上述方面的制造引线框架的方法的一个改进方面,提供一种制造引线框架的方法,它包括以下步骤:形成一底框,该底框具有为准备安装在其上的各半导体元件而设置的模垫和多个连接于相应模垫并以梳状向朝外方向延伸的引线的布置,同时通过在金属板两表面上使用形成预定形状的图案的抗蚀刻剂,同时蚀刻金属板的两个表面,在所述底框的一个表面上的所述多个引线连接于相应模垫的部分形成凹部;将一粘合带贴在所述底框的形成所述凹部的那侧的表面上;以及切割所述多个引线的形成所述凹部的部分。
另外,按照本发明的又一个方面,提供一种制造使用按照前述任一个方面的引线框架的半导体器件的方法,该方法包括以下步骤:将半导体元件安装在引线框架的模垫上;用粘合线将半导体元件的电极电连接于所述引线框架的相应的多个引线;从所述引线框架安装半导体元件的表面侧用模制树脂密封半导体元件、粘合线和所述多个引线;剥离所述粘合带;以及沿着分别包括相应于每个模垫的所述多个导线的区域的外周边切割用模制树脂密封的引线框架,以便形成各个半导体器件。
附图说明
图1A和图1B是表示现有技术的引线框架的构造的示意图;
图2A和图2B是表示按照本发明的一个实施例的引线框架的构造的示意图;
图3A至图3E是表示图2A和图2B所示引线框架的制造方法的一个实例的横剖图(局部平面图);
图4A至图4C是表示图2A和图2B所示引线框架的制造方法的另一实例的横剖图;
图5是表示使用图2A和图2B所示引线框架的半导体器件的一个实例的横剖图;
图6A至图6E是表示图5所示半导体器件的制造方法的一个实例的横剖图;
图7是示意地表示按照本发明的另一实施例的引线框架的构造的平面图。
具体实施方式
图2A和图2B示意地表示用于无引线封装件如QFN中的按照本发明一个实施例的引线框架的构造。其中图2A是表示引线框架构造的局部平面图,图2B表示沿图2A中B-B′线的引线框架的剖面结构。
在图2A和图2B中,标号20表示带状引线框架的一部分,该引线框架基本由通过蚀刻或冲压金属板制成的底框21构成。在该底框21中,标号22表示外框(外框部分);标号23表示在输送引线框架20时与输送机构接合的引导孔;标号24表示模垫,模垫被界定得相应于准备安装在其上的每个半导体元件;标号25表示支承相应模垫24的支承杆;标号26表示若干围绕相应模垫24布置的引线。这里,每个模垫24是由相应的四个支承杆25支承的,并且通过相应的支承杆25连接于相邻的模垫24。模垫24最终通过最外的支承杆25连接于外框22。
另外,多个为相应模垫24设置的引线26以梳状沿向外方向在一个区域(图中由虚线包围的区域)内延伸,该区域是由在组装封装件(半导体器件)时准备与底框21分开以形成一个单独的半导体器件的部分界定的,这将在下文讲到,使若干引线与相应的模垫24分开。每个引线26包括一个准备与半导体元件的电极电连接的内引线部分和一个准备电连接于封装件基片上的线路的外引线部分(外部连接接头)。
另外,一金属膜27在底框21的整个表面上形成,一粘合带28贴在底框21的背面(在图示实施例中的下表面)上。粘合带28的粘合基本上是作为在模制步骤(树脂密封步骤)中防止模制树脂泄漏至框的背面的对策而进行的(上述泄漏也称为“模涌(mold flush)”)。另外,粘合带28具有支承模垫24和支承杆25及外框22的功能,以及支承有关引线26的功能,以便在下面将讲到的制造引线框架20的过程中切割有关引线26的预定部分而使引线26与模垫24分开时,使引线26不致脱落。
另外,标号29表示下面讲到的半蚀刻形成的凹部。虚线CL表示在封装件组装过程中最后将引线框架20分割成各个封装件时的分割线,这与图1A的实例相似。
在按照上述传统实例的引线框架10(图1A)中,用于将各引线17彼此连接的金属部分(段杆13)存在于分割线CL上。与此相反,这个实施例的特征在于,这种金属部分被从那里消除。因此,在这个实施例的引线框架20中,粘合带28贴在底框21的一个侧面上,以便保持各自分开的引线26的设置位置。
换言之,在传统的实例(图1A和图1B)中,相应于每个模垫15的多个引线17连接于每个框(外框12和段杆13),引线17以梳状从框伸向相应的模垫。相反,在这个实施例(图2A和图2B)中,相应于每个模垫24的多个引线26以梳状在由分割线CL界定的区域内从相应的模垫沿向外方向延伸,而引线26与相应的模垫分开。在这个方面,两种引线框架的构造是不同的。
下面对照共同表示制造方法的一个实例的图3A至图3E来描述制造上述实施例的引线框架20的方法。在这些附图中,图3B至图3E表示沿图3A中B-B′线的横剖面结构。
在第一步骤(图3A)中,通过蚀刻或冲压金属板形成底框21。
如图示的平面图构造中所示,准备在这个步骤中形成的底框21具有一种结构,该结构包括为准备安装在其上的各个半导体元件设置的模垫24,以及连接于模垫、以梳状向外面方向延伸的引线26的布置。另外,还布置着支承杆25,以便使各模垫24和外框22相互连接。
这里,金属板例如可采用铜(Cu)、铜基合金、铁-镍(Fe-Ni)、铁镍基合金等。
在下一个步骤(图3B)中,通过半蚀刻在底框21一个表面(在图示实例中为下表面)的预定部分上形成凹部29。
在图3A所示的平面图构造中,引线26a连接于相应模垫24的位置被选作用于形成凹部29的位置。
这里,例如可以通过用掩罩(未画出)覆盖底框21的除上述预定部分的区域以外的整个表面,然后通过湿式蚀刻底框21来进行半蚀刻过程。
在下一步骤(图3C)中,通过电镀在设在凹部29的底框21的整个表面上形成金属膜27。
例如,当将底框21用作馈送层时,为了改善钯(Pd)镀层的附着,在底框21的表面镀镍(Ni),然后,为了提高导电性将Pd镀在Ni层上,在Pd层上进一步进行金(Au)闪蒸(gold flashing),以便形成金属膜(Ni/Pd/Au)27。
应当注意的是,金属膜27镀层的构造并不局限于上面的描述。例如,在后一步骤用树脂密封引线框架以后,也可以通过化学镀、印刷等方法在从模制树脂露出的引线部分上形成焊料膜(金属膜)。或者,也可采用其它公知的镀层构造。
在下一个步骤(图3D)中,环氧树脂、聚亚胺树脂或类似物制成的粘合带28贴附在底框21的形成凹部29的那个侧面上,即,底框21的下表面上。
在最后的步骤(图3E)中,各引线26a(图3D)的形成凹部29的部分例如用冲头冲压切出,这样制成这个实施例的引线框架20(图2A和图2B)。
另外,在引线26a包括用作连接于模垫的接地线或供电线的引线的情形中,则不必使有关的引线与模垫分离。
如上所述,按照这个实施例的引线框架20及其制造方法,相应于各自地为准备安装的半导体元件界定的每个模垫24的多个引线26只存在于分割线CL限定的区域(准备与引线框架20分开的部分)内。换言之,虽然用于将各引线彼此连接的金属部分(段杆13)存在于传统实例(图1A和图1B)的引线框架10中的分割线CL上,但是,在这个实施例中并不存在这样的金属部分。
因此,在使用这个实施例的引线框架20组装封装件(半导体器件)的情形中,不必在最后的切块步骤中切割引线26。也就是说,实际上只切割模制树脂。这样,可以消除现有技术中的缺陷(例如,切块机刀片的快速磨损、切块速度下降和可加工性下降等问题,或者金属“毛刺”的产生或引线与树脂分开等缺陷)。上述优点有助于提高生产率和产量。
另外,由于相应于每个模垫24的引线26只在由分割线CL限定的区域内,因而相应于两个相邻模垫24的引线26彼此是电绝缘的。也就是说,可以克服按照传统实例的引线框架10(图1A和图1B)中的那种状态,在该状态中相应于两个相邻的模垫15的各引线17通过段杆13彼此电连接。这样就能够在切块前的阶段检查单独的封装件(半导体器件)了。
在按照上述实施例的制造引线框架20的方法中,底框21的形成(图3A)和凹部29的形成(图3B)是在不同的步骤中进行的。但是,也可以在一个过程中形成这些构造。图4A至图4C表示在这种情形中制造方法的一个实例。
在图示的方法中,首先在金属板(例如,Cu或Cu基合金制成的板)的两个表面上涂覆抗蚀刻剂。然后,使用各自形成预定形状的掩模(未画出)使抗蚀刻剂形成图案,这样形成抗蚀刻剂图案RP1和RP2(图4A)。
在这种情形中,与上侧面(安装半导体元件的侧面)上的抗蚀刻剂图案RP1有关,相应的抗蚀刻剂形成图案,以便覆盖在金属板MP上的相应于模垫24、连接于相应模垫并以梳状延伸的各引线26、支承杆25和外框22的区域。另一方面,与在下侧面上的抗蚀刻剂图案RP2有关,相应的抗蚀刻剂形成图案,以便覆盖金属板MP上的相应于模垫24、各引线26、支承杆25和外框22的区域,并露出相应于凹部29的区域。
以这种方式,在用抗蚀刻剂图案PR1和RP2覆盖金属板MP的两表面以后,如图3A所示底框21的图案和凹部29例如借助湿式蚀刻同时形成(图4B)。
另外,将抗蚀刻剂(RP1和RP2)剥离,从而得到如图3B所示结构的底框21(图4C)。其后的步骤与图3C至图3E所示步骤相同。
按照图4A至图4C所示的方法,底框21的形成和凹部29的形成是在一个过程中进行的。因此,与前述实施例(图2A至图3E)相比较可以简化工艺。
图5示意地表示具有QFN封装件结构的半导体器件的一个实例,该半导体器件是使用上述实施例的引线框架20制造的。
在图5中,标号30表示半导体器件;标号31表示安装在模垫24上的半导体元件;标号32表示将半导体元件31的每个电极电连接于相应引线26的粘合线;标号33表示用于保护半导体元件31、粘合线等的模制树脂。
现有对照共同表示制造方法的图6A至图6E描述制造半导体器件30的方法。
在第一个步骤(图6A)中,借助夹具(未画出)固定引线框架20,使贴粘合带28的表面朝下,将半导体元件31分别安装在引线框架20的各个模垫24上。为了更为精确,将粘合剂如环氧树脂涂覆在模垫24上,使半导体元件31的底面(与形成电极的表面相反的表面)朝下设置,因而借助粘合剂将半导体元件31贴附在模垫24上。
在下一个步骤(图6B)中,分别借助粘合线(32)使各半导体元件31的电极和在引线框架20的一个表面(在图示实例中为上表面)上的相应引线26的内引线部分彼此电连接。这样,将各半导体元件31安装在引线框架20上。
在下一个步骤(图6C)中,按照批量模制法,使用模制树脂33密封引线框架20的安装半导体元件31的那侧的整个表面。显然在图中并未具体画出,但是,这种密封是通过将引线框架20设置在一个下部模具(一对上、下模具)上,用上部模具从上方粘合引线框架20,然后在注入模制树脂33时进行热压处理。例如,使用传递模制法作为密封的手段。
在下一个步骤(图6D)中,将用模制树脂33密封的引线框架20从模具中取出,然后从底框21剥离,除去粘合带28。通过剥离、除去粘合带28,半导体器件的安装表面那侧被露出,因而作为外部连接接头的引线26暴露于与模制树脂33相同的平面。
在最后的步骤(图6E)中,使用切块机或类似装置将底框21(安装有各半导体元件31,整个表面用模制树脂33密封的引线框架)沿虚线表示的分割线D-D′分割成封装件单元,因而使每个封装件单元包括一个半导体元件31。这里,分割线D-D′是与图2A中虚线表示的分割线CL对齐的。
通过上述各步骤就制成了具有QFN封装结构的半导体器件30(图5)。
图7示意地表示按照本发明的另一实施例的引线框架(局部)的平面图构造。
在按照这个实施例的引线框架20a中,作为准备在将引线框架201切成各封装件(半导体器件)时与外框22和粘合于外框的其它支承杆分开的、相应于各模垫24的支承杆25a的部分被事先切割。也就是说,相应于每个模垫24的四个支承杆25a在分割线CL限定的区域内延伸,支承杆25a并不连接于相邻的模垫24及其相应的支承杆25a。与此相关,引线框架20a具有与按照图2A和图2B所示的实施例的引线框架20的结构不同的结构。由于这种构造的其它部分与图2A和图2B所示实施例中的情形相同,因而这里不再赘述。
同样,由于引线框架20a的制造方法与图3A至图3E或图4A至图4C所示的制造方法也基本相同,因而这里不再赘述。应当注意的是,按照这个实施例,如果在各引线26a中形成凹部29(图3A至图3E),那么,凹部是在支承杆25a的相应于各模垫24的部分上,在半导体器件组装过程中准备与引线框架20a分开的位置上通过半蚀刻法形成的。另外,在贴粘合带28(图3D)以后,如果切割各引线26a的形成凹部的部分,那么各支承杆25a的形成凹部的部分同时被切割。
在前述实施例(图2A至图3E)中,所作的描述是假定支承杆25并不涉及单独的封装件(半导体器件)的检查(即,假定支承杆25并不连接于任何信号线或供电/接地线)。相反,这个实施例(图7)所提供的引线框架20a也适用于支承杆25a连接于任何信号线或供电/接地线的情形。

Claims (11)

1.一种引线框架,它包括:
一个底框,该底框包括分别相应于准备安装在其上的每个半导体元件界定的模垫,以及多个围绕相应模垫布置的引线;
一条粘合带,该粘合带贴在所述底框上,以便覆盖每个模垫的一个表面侧和所述多个围绕相应模垫布置的引线;以及
所述多个相应于每个模垫的引线以梳状在准备最后分成一个半导体器件的区域内从相应的模垫向朝外的方向延伸,分别与所述模垫分开。
2.如权利要求1所述的引线框架,其特征在于:还包括多个分别连接于每个模垫的支承杆,所述支承杆由所述粘合带支承,并延伸得接近于所述准备最后分成半导体器件的区域的周边部分。
3.如权利要求1所述的引线框架,其特征在于:相应于每个模垫的所述多个引线当引线框架最后分成各个半导体器件时用作外部连接接头,引线暴露于相应半导体器件的安装表面侧。
4.一种制造引线框架的方法,它包括以下步骤:
通过蚀刻或冲压金属板形成一底框,该底框布置有为了各个准备安装在其上的半导体元件设置的模垫和多个连接于相应模垫,且以梳状向朝外方向延伸的引线;
通过半蚀刻在所述底框的一个表面上的所述多个引线连接于相应模垫的部分上形成凹部;
将一粘合带贴在所述底框的形成所述凹部的那侧的表面上;以及
切割所述多个引线的形成所述凹部的部分。
5.如权利要求4所述的方法,其特征在于:还包括以下步骤:
在形成底框的步骤中形成多个支承杆,使每个支承杆的一端连接于底框的外框部分,而另一端连接于相应的模垫;
在形成凹部的步骤中,在各支承杆准备在引线框架最后分成各半导体器件时与底框的外框部分分开的部分,从底框的一个表面侧通过半蚀刻形成附加的凹部;以及
在贴粘合带的步骤以后切割所述支承杆的形成附加凹部的部分。
6.如权利要求4所述的方法,其特征在于:在形成凹部的步骤和贴粘合带的步骤之间还包括在所述底框的整个表面上形成金属膜的步骤。
7.一种制造引线框架的方法,它包括以下步骤:
形成一底框,该底框具有为准备安装在其上的各半导体元件而设置的模垫和多个连接于相应模垫并以梳状向朝外方向延伸的引线的布置,同时通过在金属板两表面上使用形成预定形状的图案的抗蚀刻剂,同时蚀刻金属板的两个表面,在所述底框的一个表面上的所述多个引线连接于相应模垫的部分形成凹部;
将一粘合带贴在所述底框的形成所述凹部的那侧的表面上;以及
切割所述多个引线的形成所述凹部的部分。
8.如权利要求7所述的方法,其特征在于:还包括以下步骤:
在形成底框的步骤中形成多个支承杆,使支承杆的一端连接于底框的外框部分,而另一端连接于相应的模垫;
在形成凹部的步骤中,在各支承杆在引线框架最后分成各个半导体器件时准备与底框的外框部分分开的部分,从底框的一个表面侧通过半蚀刻形成附加凹部;以及
在贴粘合带的步骤以后,切割所述多个支承杆的形成附加凹部的部分。
9.如权利要求7所述的方法,其特征在于:在形成凹部的步骤和贴粘合带的步骤之间还包括在所述底框的整个表面形成金属膜的步骤。
10.一种制造使用按照权利要求1和2中任一项所述的引线框架的半导体器件的方法,该方法包括以下步骤:
将半导体元件安装在引线框架的模垫上;
用粘合线将半导体元件的电极电连接于所述引线框架的相应的多个引线;
从所述引线框架安装半导体元件的表面侧用模制树脂密封半导体元件、粘合线和所述多个引线;
剥离所述粘合带;以及
沿着分别包括相应于每个模垫的所述多个导线的区域的外周边切割用模制树脂密封的引线框架,以便形成各个半导体器件。
11.如权利要求10所述的方法,其特征在于:所述用模制树脂的密封是通过批量模制法进行的,其中引线框架在安装半导体器件的那侧的整个表面用树脂密封。
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