CN1097300C - 制造半导体器件的方法、显示装置、电子设备 - Google Patents

制造半导体器件的方法、显示装置、电子设备 Download PDF

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Publication number
CN1097300C
CN1097300C CN96191902A CN96191902A CN1097300C CN 1097300 C CN1097300 C CN 1097300C CN 96191902 A CN96191902 A CN 96191902A CN 96191902 A CN96191902 A CN 96191902A CN 1097300 C CN1097300 C CN 1097300C
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China
Prior art keywords
film
semiconductor film
semiconductor
substrate
manufacturing
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Expired - Fee Related
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CN96191902A
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Chinese (zh)
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CN1173948A (zh
Inventor
宫坂光敏
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Seiko Epson Corp
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Seiko Epson Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H10P14/3602—In-situ cleaning

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  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
CN96191902A 1995-12-14 1996-08-07 制造半导体器件的方法、显示装置、电子设备 Expired - Fee Related CN1097300C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP95/02568 1995-12-14
PCT/JP1995/002568 WO1997022141A1 (en) 1995-12-14 1995-12-14 Method of manufacturing thin film semiconductor device, and thin film semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CNB021204616A Division CN1235269C (zh) 1995-12-14 1996-08-07 半导体器件以及半导体器件的制造方法

Publications (2)

Publication Number Publication Date
CN1173948A CN1173948A (zh) 1998-02-18
CN1097300C true CN1097300C (zh) 2002-12-25

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Family Applications (2)

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CN96191902A Expired - Fee Related CN1097300C (zh) 1995-12-14 1996-08-07 制造半导体器件的方法、显示装置、电子设备
CNB021204616A Expired - Fee Related CN1235269C (zh) 1995-12-14 1996-08-07 半导体器件以及半导体器件的制造方法

Family Applications After (1)

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CNB021204616A Expired - Fee Related CN1235269C (zh) 1995-12-14 1996-08-07 半导体器件以及半导体器件的制造方法

Country Status (6)

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EP (1) EP0810640A4 (https=)
JP (1) JP3999138B2 (https=)
KR (1) KR100274494B1 (https=)
CN (2) CN1097300C (https=)
TW (1) TW316999B (https=)
WO (2) WO1997022141A1 (https=)

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JP3350433B2 (ja) 1998-02-16 2002-11-25 シャープ株式会社 プラズマ処理装置
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JP2004061751A (ja) * 2002-07-26 2004-02-26 Semiconductor Energy Lab Co Ltd 表示装置の作製方法
KR100512960B1 (ko) * 2002-09-26 2005-09-07 삼성전자주식회사 플렉서블 ｍｅｍｓ 트랜스듀서와 그 제조방법 및 이를채용한 플렉서블 ｍｅｍｓ 무선 마이크로폰
JP4986415B2 (ja) * 2004-06-14 2012-07-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5122818B2 (ja) * 2004-09-17 2013-01-16 シャープ株式会社 薄膜半導体装置の製造方法
EP1899498B1 (en) * 2005-06-29 2014-05-21 TEL Solar AG Method for manufacturing flat substrates
CN101288035B (zh) 2005-09-14 2013-06-19 马特森技术有限公司 可重复热处理的方法和设备
JP5004160B2 (ja) * 2006-12-12 2012-08-22 株式会社日本製鋼所 結晶質半導体膜の製造方法および半導体膜の加熱制御方法ならびに半導体結晶化装置
CN101702950B (zh) 2007-05-01 2012-05-30 加拿大马特森技术有限公司 辐照脉冲热处理方法和设备
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JP5321022B2 (ja) * 2008-12-04 2013-10-23 ソニー株式会社 半導体装置の製造方法および半導体装置
JP5328814B2 (ja) * 2009-01-09 2013-10-30 株式会社アルバック プラズマ処理装置及びプラズマｃｖｄ成膜方法
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KR101733179B1 (ko) 2010-10-15 2017-05-08 맛선 테크놀러지, 인코포레이티드 워크피스를 노출할 조사 펄스의 형상을 결정하는 방법, 장치 및 매체
CN102061456B (zh) * 2010-10-29 2012-08-22 华南理工大学 一种用于pecvd装置的悬臂式推拉舟系统
KR101912888B1 (ko) * 2011-10-07 2018-12-28 어플라이드 머티어리얼스, 인코포레이티드 아르곤 가스 희석으로 실리콘 함유 층을 증착하기 위한 방법들
JP2016070900A (ja) * 2014-10-02 2016-05-09 セイコーエプソン株式会社 磁気計測装置の製造方法、ガスセルの製造方法、磁気計測装置、およびガスセル
JP6960344B2 (ja) 2018-01-26 2021-11-05 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置

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Also Published As

Publication number Publication date
TW316999B (https=) 1997-10-01
CN1434483A (zh) 2003-08-06
WO1997022141A1 (en) 1997-06-19
WO1997022142A1 (en) 1997-06-19
CN1235269C (zh) 2006-01-04
EP0810640A1 (en) 1997-12-03
KR970706616A (ko) 1997-11-03
JP3999138B2 (ja) 2007-10-31
EP0810640A4 (en) 1999-06-16
KR100274494B1 (ko) 2001-01-15
JP2003289046A (ja) 2003-10-10
CN1173948A (zh) 1998-02-18

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