CN109420979B - 加工装置以及加工方法 - Google Patents
加工装置以及加工方法 Download PDFInfo
- Publication number
- CN109420979B CN109420979B CN201810862652.4A CN201810862652A CN109420979B CN 109420979 B CN109420979 B CN 109420979B CN 201810862652 A CN201810862652 A CN 201810862652A CN 109420979 B CN109420979 B CN 109420979B
- Authority
- CN
- China
- Prior art keywords
- grinding
- workpiece
- height position
- sealed substrate
- displacement sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- 238000003754 machining Methods 0.000 title claims abstract description 61
- 238000005259 measurement Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims description 311
- 238000005520 cutting process Methods 0.000 claims description 192
- 238000006073 displacement reaction Methods 0.000 claims description 100
- 239000004065 semiconductor Substances 0.000 claims description 74
- 239000011347 resin Substances 0.000 claims description 54
- 229920005989 resin Polymers 0.000 claims description 54
- 238000012545 processing Methods 0.000 claims description 50
- 238000007789 sealing Methods 0.000 claims description 49
- 238000003672 processing method Methods 0.000 claims description 21
- 238000007689 inspection Methods 0.000 claims description 18
- 229910000679 solder Inorganic materials 0.000 description 50
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 19
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- 239000000498 cooling water Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
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- 229910003460 diamond Inorganic materials 0.000 description 2
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- 238000011065 in-situ storage Methods 0.000 description 2
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- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
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- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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- 238000003860 storage Methods 0.000 description 1
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/10—Single-purpose machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D1/00—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor
- B26D1/01—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work
- B26D1/12—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work having a cutting member moving about an axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Forests & Forestry (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Dicing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-159274 | 2017-08-22 | ||
JP2017159274A JP6482618B2 (ja) | 2017-08-22 | 2017-08-22 | 加工装置及び加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109420979A CN109420979A (zh) | 2019-03-05 |
CN109420979B true CN109420979B (zh) | 2022-02-11 |
Family
ID=65514497
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810862652.4A Active CN109420979B (zh) | 2017-08-22 | 2018-08-01 | 加工装置以及加工方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6482618B2 (ko) |
KR (1) | KR102198458B1 (ko) |
CN (1) | CN109420979B (ko) |
TW (1) | TWI736790B (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7154336B2 (ja) * | 2021-03-26 | 2022-10-17 | Towa株式会社 | 切断装置、及び、切断品の製造方法 |
WO2024052967A1 (ja) * | 2022-09-05 | 2024-03-14 | 株式会社レゾナック | 半導体装置の製造方法、構造体及び半導体装置 |
WO2024136645A1 (en) * | 2022-12-20 | 2024-06-27 | Besi Netherlands B.V. | Sawing device for forming saw-cuts into a semiconductor product and method therefor |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10166262A (ja) * | 1996-12-10 | 1998-06-23 | Nikon Corp | 研磨装置 |
EP1270148A1 (en) * | 2001-06-22 | 2003-01-02 | Infineon Technologies SC300 GmbH & Co. KG | Arrangement and method for conditioning a polishing pad |
US20050009456A1 (en) * | 2001-11-01 | 2005-01-13 | Tatsuya Sasaki | Polishing apparatus |
JP2003151923A (ja) * | 2001-11-14 | 2003-05-23 | Tokyo Seimitsu Co Ltd | ダイシング装置 |
JP2003168655A (ja) * | 2001-12-03 | 2003-06-13 | Tokyo Seimitsu Co Ltd | ダイシング装置 |
JP2003214822A (ja) * | 2002-01-25 | 2003-07-30 | Disco Abrasive Syst Ltd | 深さ計測装置及び深さ計測方法並びに切削装置 |
JP2005175148A (ja) * | 2003-12-10 | 2005-06-30 | Tokyo Seimitsu Co Ltd | ダイシング方法 |
JP2005353749A (ja) * | 2004-06-09 | 2005-12-22 | Tokyo Seimitsu Co Ltd | ダイシング装置及びダイシング方法 |
JP4555092B2 (ja) * | 2005-01-05 | 2010-09-29 | 株式会社ディスコ | レーザー加工装置 |
JP2007042810A (ja) * | 2005-08-02 | 2007-02-15 | Tokyo Seimitsu Co Ltd | ワーク切断方法 |
JP5335250B2 (ja) * | 2008-01-29 | 2013-11-06 | 株式会社ディスコ | ウエーハの切削加工方法 |
JP2013056388A (ja) * | 2011-09-08 | 2013-03-28 | Disco Corp | 加工装置 |
TWI564948B (zh) * | 2011-09-15 | 2017-01-01 | Sintokogio Ltd | Hard and brittle materials for grinding, grinding processing systems and grinding, grinding methods |
NL2009612A (en) * | 2011-11-21 | 2013-05-23 | Asml Netherlands Bv | Level sensor, a method for determining a height map of a substrate, and a lithographic apparatus. |
WO2014142058A1 (ja) * | 2013-03-12 | 2014-09-18 | 新東工業株式会社 | センタレス研磨装置 |
JP2014184495A (ja) * | 2013-03-21 | 2014-10-02 | Toshiba Corp | 加工治具、加工装置、および加工方法 |
JP6084114B2 (ja) * | 2013-05-10 | 2017-02-22 | 株式会社ディスコ | パッケージ基板の加工方法 |
JP6218526B2 (ja) * | 2013-09-20 | 2017-10-25 | Towa株式会社 | 切断装置及び切断方法 |
TWI580523B (zh) * | 2014-01-21 | 2017-05-01 | 中國砂輪企業股份有限公司 | 具有最佳磨料露出率之化學機械研磨修整器 |
JP6262593B2 (ja) * | 2014-04-21 | 2018-01-17 | 株式会社ディスコ | 研削装置 |
JP6328513B2 (ja) * | 2014-07-28 | 2018-05-23 | 株式会社ディスコ | ウエーハの加工方法 |
JP6521687B2 (ja) * | 2015-03-23 | 2019-05-29 | 株式会社ディスコ | 切削ブレードの検査方法 |
JP6494377B2 (ja) * | 2015-03-31 | 2019-04-03 | 株式会社東京精密 | ワーク加工装置 |
JP6532273B2 (ja) * | 2015-04-21 | 2019-06-19 | 株式会社ディスコ | ウェーハの加工方法 |
JP2016213240A (ja) * | 2015-04-30 | 2016-12-15 | Towa株式会社 | 製造装置及び製造方法 |
JP2017005056A (ja) * | 2015-06-08 | 2017-01-05 | 株式会社ディスコ | ウエーハの加工方法 |
TWI651163B (zh) * | 2015-08-26 | 2019-02-21 | 日商迪思科股份有限公司 | 磨削方法 |
JP6800745B2 (ja) * | 2016-12-28 | 2020-12-16 | 株式会社ディスコ | 半導体パッケージの製造方法 |
-
2017
- 2017-08-22 JP JP2017159274A patent/JP6482618B2/ja active Active
-
2018
- 2018-07-25 KR KR1020180086321A patent/KR102198458B1/ko active IP Right Grant
- 2018-08-01 CN CN201810862652.4A patent/CN109420979B/zh active Active
- 2018-08-08 TW TW107127646A patent/TWI736790B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR20190021155A (ko) | 2019-03-05 |
KR102198458B1 (ko) | 2021-01-06 |
JP6482618B2 (ja) | 2019-03-13 |
CN109420979A (zh) | 2019-03-05 |
TWI736790B (zh) | 2021-08-21 |
JP2019040899A (ja) | 2019-03-14 |
TW201913798A (zh) | 2019-04-01 |
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