JP2015051479A - 研削装置 - Google Patents
研削装置 Download PDFInfo
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- JP2015051479A JP2015051479A JP2013185347A JP2013185347A JP2015051479A JP 2015051479 A JP2015051479 A JP 2015051479A JP 2013185347 A JP2013185347 A JP 2013185347A JP 2013185347 A JP2013185347 A JP 2013185347A JP 2015051479 A JP2015051479 A JP 2015051479A
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- 239000004065 semiconductor Substances 0.000 abstract description 89
- 239000004575 stone Substances 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 abstract 3
- 238000000034 method Methods 0.000 description 25
- 230000008569 process Effects 0.000 description 24
- 230000002093 peripheral effect Effects 0.000 description 13
- 238000004140 cleaning Methods 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000003384 imaging method Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Abstract
【解決手段】研削装置(1)は、半導体ウェーハ(W)に環状に配置した研削砥石(54)を当接させて研削し、半導体ウェーハの外周に環状の凸部(W1)を形成させる粗研削ユニット(32)及び仕上げ研削ユニット(33)と、これらを半導体ウェーハの径方向に進退させる進退手段(41、42)と、凸部の幅を測定する測定手段(56、57)と、演算部(81)及び制御部(82)とを備えている。演算部では、凸部の幅を測定した測定値(H1、H3)と、予め規定される規定値(H2、H4)とを比較して差(d1、d2)を求める。制御部では、演算部で求められた差に応じて進退手段で粗研削ユニット及び仕上げ研削ユニットを進退させ、規定値に凸部の幅を仕上げる。
【選択図】図2
Description
32 粗研削ユニット(研削手段)
33 仕上げ研削ユニット(研削手段)
34 保持テーブル
41、42 進退手段
44 研削送り手段
54 研削砥石
56、57 測定手段
81 演算部
82 制御部
W 半導体ウェーハ(板状ワーク)
W1 凸部
Claims (1)
- 板状ワークを保持する保持テーブルと、該保持テーブルに保持された板状ワークに環状に配置した研削砥石を当接させて研削し該板状ワークの外周に環状の凸部を形成させる研削手段と、該研削手段を該保持テーブルの径方向に進退させる進退手段と、該研削手段を保持テーブルに接近および離間させる研削送り方向に研削送りする研削送り手段と、該凸部の幅を測定する測定手段と、で少なくとも構成される研削装置であって、
該測定手段で、研削された板状ワークの該凸部の幅を測定した測定値と、予め規定される凸部の幅の規定値とを比較して差を求める演算部と、該演算部で求められた差に応じて該進退手段を用いて該研削手段を進退させる制御部と、を含んで構成され、該規定値に該凸部の幅を仕上げる研削装置。
Priority Applications (1)
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JP2013185347A JP6246533B2 (ja) | 2013-09-06 | 2013-09-06 | 研削装置 |
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JP2013185347A JP6246533B2 (ja) | 2013-09-06 | 2013-09-06 | 研削装置 |
Publications (2)
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JP2015051479A true JP2015051479A (ja) | 2015-03-19 |
JP6246533B2 JP6246533B2 (ja) | 2017-12-13 |
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JP2013185347A Active JP6246533B2 (ja) | 2013-09-06 | 2013-09-06 | 研削装置 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US11837632B2 (en) | 2021-03-24 | 2023-12-05 | Globalwafers Co., Ltd. | Wafer |
TWI818416B (zh) * | 2021-03-24 | 2023-10-11 | 環球晶圓股份有限公司 | 晶圓 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007320001A (ja) * | 2006-06-02 | 2007-12-13 | Disco Abrasive Syst Ltd | ウエーハの外周部に形成される環状補強部の確認方法および確認装置 |
JP2008098351A (ja) * | 2006-10-11 | 2008-04-24 | Disco Abrasive Syst Ltd | ウエーハの研削加工方法 |
JP2009253143A (ja) * | 2008-04-09 | 2009-10-29 | Fuji Electric Device Technology Co Ltd | 半導体ウェハ研削用砥石、半導体ウェハ研削装置および半導体装置の製造方法 |
JP2011071286A (ja) * | 2009-09-25 | 2011-04-07 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
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2013
- 2013-09-06 JP JP2013185347A patent/JP6246533B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007320001A (ja) * | 2006-06-02 | 2007-12-13 | Disco Abrasive Syst Ltd | ウエーハの外周部に形成される環状補強部の確認方法および確認装置 |
JP2008098351A (ja) * | 2006-10-11 | 2008-04-24 | Disco Abrasive Syst Ltd | ウエーハの研削加工方法 |
JP2009253143A (ja) * | 2008-04-09 | 2009-10-29 | Fuji Electric Device Technology Co Ltd | 半導体ウェハ研削用砥石、半導体ウェハ研削装置および半導体装置の製造方法 |
JP2011071286A (ja) * | 2009-09-25 | 2011-04-07 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
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