CN1093978C - 半导体存储装置 - Google Patents

半导体存储装置 Download PDF

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Publication number
CN1093978C
CN1093978C CN95120910A CN95120910A CN1093978C CN 1093978 C CN1093978 C CN 1093978C CN 95120910 A CN95120910 A CN 95120910A CN 95120910 A CN95120910 A CN 95120910A CN 1093978 C CN1093978 C CN 1093978C
Authority
CN
China
Prior art keywords
sense amplifier
bit line
signal line
circuit
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN95120910A
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English (en)
Chinese (zh)
Other versions
CN1134022A (zh
Inventor
竹中博幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN1134022A publication Critical patent/CN1134022A/zh
Application granted granted Critical
Publication of CN1093978C publication Critical patent/CN1093978C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
CN95120910A 1994-12-16 1995-12-15 半导体存储装置 Expired - Lifetime CN1093978C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6312990A JPH08172169A (ja) 1994-12-16 1994-12-16 半導体記憶装置
JP312990/94 1994-12-16

Publications (2)

Publication Number Publication Date
CN1134022A CN1134022A (zh) 1996-10-23
CN1093978C true CN1093978C (zh) 2002-11-06

Family

ID=18035914

Family Applications (1)

Application Number Title Priority Date Filing Date
CN95120910A Expired - Lifetime CN1093978C (zh) 1994-12-16 1995-12-15 半导体存储装置

Country Status (7)

Country Link
US (1) US5691933A (enExample)
EP (1) EP0717414B1 (enExample)
JP (1) JPH08172169A (enExample)
KR (1) KR100254069B1 (enExample)
CN (1) CN1093978C (enExample)
DE (1) DE69520333T2 (enExample)
TW (1) TW295662B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3291206B2 (ja) * 1996-09-17 2002-06-10 富士通株式会社 半導体記憶装置
US5771268A (en) * 1996-12-10 1998-06-23 International Business Machines Corporation High speed rotator with array method
US6067655A (en) * 1997-08-28 2000-05-23 Stmicroelectronics, N.V. Burst error limiting symbol detector system
US6033945A (en) * 1998-06-03 2000-03-07 G-Link Technology Multiple equilibration circuits for a single bit line
JP4339938B2 (ja) 1998-06-10 2009-10-07 株式会社ルネサステクノロジ 半導体記憶装置
US7157314B2 (en) * 1998-11-16 2007-01-02 Sandisk Corporation Vertically stacked field programmable nonvolatile memory and method of fabrication
KR100319885B1 (ko) * 1999-04-27 2002-01-10 윤종용 데이터 입출력 라인의 저항값을 줄이는 데이터 입출력 라인 구조
US6188596B1 (en) * 1999-05-20 2001-02-13 Advanced Micro Devices, Inc. Layout for semiconductor memory including multi-level sensing
US6163495A (en) * 1999-09-17 2000-12-19 Cypress Semiconductor Corp. Architecture, method(s) and circuitry for low power memories
TW503396B (en) 1999-12-03 2002-09-21 Hitachi Ltd Semiconductor device
US8575719B2 (en) 2000-04-28 2013-11-05 Sandisk 3D Llc Silicon nitride antifuse for use in diode-antifuse memory arrays
US7184290B1 (en) * 2000-06-28 2007-02-27 Marvell International Ltd. Logic process DRAM
KR100395877B1 (ko) * 2000-11-10 2003-08-25 삼성전자주식회사 반도체 메모리의 데이타 감지 장치
JP2003092364A (ja) * 2001-05-21 2003-03-28 Mitsubishi Electric Corp 半導体記憶装置
US6804145B2 (en) * 2002-11-01 2004-10-12 Hewlett-Packard Development Company, L.P. Memory cell sensing system and method
CN101673754B (zh) * 2004-05-25 2011-11-30 瑞萨电子株式会社 半导体器件
US7327591B2 (en) * 2004-06-17 2008-02-05 Texas Instruments Incorporated Staggered memory cell array
US7218564B2 (en) * 2004-07-16 2007-05-15 Promos Technologies Inc. Dual equalization devices for long data line pairs
JP4400497B2 (ja) * 2005-03-31 2010-01-20 エルピーダメモリ株式会社 半導体記憶装置
JP4989900B2 (ja) * 2006-01-31 2012-08-01 ルネサスエレクトロニクス株式会社 並列演算処理装置
JP4428384B2 (ja) 2006-12-25 2010-03-10 エルピーダメモリ株式会社 半導体記憶装置
FR2972838B1 (fr) * 2011-03-18 2013-04-12 Soitec Silicon On Insulator Memoire a semi-conducteurs comportant des amplificateurs de lecture decales associes a un decodeur de colonne local
WO2014112472A1 (ja) * 2013-01-15 2014-07-24 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
CN113129941A (zh) * 2019-12-31 2021-07-16 福建省晋华集成电路有限公司 一种半导体存储器件

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5280448A (en) * 1987-11-18 1994-01-18 Sony Corporation Dynamic memory with group bit lines and associated bit line group selector

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5683891A (en) * 1979-12-13 1981-07-08 Fujitsu Ltd Semiconductor storage device
JPH07107797B2 (ja) * 1987-02-10 1995-11-15 三菱電機株式会社 ダイナミツクランダムアクセスメモリ
JPS6413290A (en) * 1987-07-07 1989-01-18 Oki Electric Ind Co Ltd Semiconductor memory
JP2691280B2 (ja) * 1988-05-12 1997-12-17 三菱電機株式会社 半導体記憶装置
DE69229067T2 (de) * 1991-01-25 1999-12-09 Nec Corp., Tokio/Tokyo Halbleiterspeicheranordnung
KR100292170B1 (ko) * 1991-06-25 2001-06-01 사와무라 시코 반도체기억장치
JP2945216B2 (ja) * 1992-09-17 1999-09-06 シャープ株式会社 半導体メモリ装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5280448A (en) * 1987-11-18 1994-01-18 Sony Corporation Dynamic memory with group bit lines and associated bit line group selector

Also Published As

Publication number Publication date
KR960025729A (ko) 1996-07-20
DE69520333T2 (de) 2001-08-09
CN1134022A (zh) 1996-10-23
US5691933A (en) 1997-11-25
EP0717414A3 (en) 1996-11-06
EP0717414B1 (en) 2001-03-14
TW295662B (enExample) 1997-01-11
EP0717414A2 (en) 1996-06-19
KR100254069B1 (ko) 2000-04-15
DE69520333D1 (de) 2001-04-19
JPH08172169A (ja) 1996-07-02

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Granted publication date: 20021106

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