CN109326517B - 对多层膜进行蚀刻的方法 - Google Patents
对多层膜进行蚀刻的方法 Download PDFInfo
- Publication number
- CN109326517B CN109326517B CN201810862184.0A CN201810862184A CN109326517B CN 109326517 B CN109326517 B CN 109326517B CN 201810862184 A CN201810862184 A CN 201810862184A CN 109326517 B CN109326517 B CN 109326517B
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- CN
- China
- Prior art keywords
- gas
- multilayer film
- plasma
- mask
- openings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 title claims abstract description 140
- 238000005530 etching Methods 0.000 title claims abstract description 37
- 239000007789 gas Substances 0.000 claims abstract description 182
- 230000008569 process Effects 0.000 claims abstract description 87
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 26
- 239000011593 sulfur Substances 0.000 claims abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 8
- 125000001153 fluoro group Chemical group F* 0.000 claims abstract description 8
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 8
- 238000012545 processing Methods 0.000 claims description 36
- 238000009832 plasma treatment Methods 0.000 claims description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 125000004430 oxygen atom Chemical group O* 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 description 58
- 238000002474 experimental method Methods 0.000 description 57
- 230000008859 change Effects 0.000 description 31
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000003475 lamination Methods 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910003481 amorphous carbon Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017149186A JP6948181B2 (ja) | 2017-08-01 | 2017-08-01 | 多層膜をエッチングする方法 |
| JP2017-149186 | 2017-08-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109326517A CN109326517A (zh) | 2019-02-12 |
| CN109326517B true CN109326517B (zh) | 2023-07-28 |
Family
ID=65230491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810862184.0A Active CN109326517B (zh) | 2017-08-01 | 2018-08-01 | 对多层膜进行蚀刻的方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20190043721A1 (enExample) |
| JP (1) | JP6948181B2 (enExample) |
| KR (1) | KR102531961B1 (enExample) |
| CN (1) | CN109326517B (enExample) |
| SG (1) | SG10201806550PA (enExample) |
| TW (1) | TWI765077B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11171011B2 (en) * | 2018-08-21 | 2021-11-09 | Lam Research Corporation | Method for etching an etch layer |
| JP7228413B2 (ja) * | 2019-03-11 | 2023-02-24 | 東京エレクトロン株式会社 | プラズマ処理方法、及び、プラズマ処理装置 |
| JP7308110B2 (ja) * | 2019-09-17 | 2023-07-13 | 東京エレクトロン株式会社 | シリコン酸化膜をエッチングする方法及びプラズマ処理装置 |
| US12469693B2 (en) * | 2019-09-17 | 2025-11-11 | Asm Ip Holding B.V. | Method of forming a carbon-containing layer and structure including the layer |
| JP7292163B2 (ja) * | 2019-09-19 | 2023-06-16 | 株式会社ディスコ | 被加工物の加工方法 |
| JP7604145B2 (ja) * | 2019-11-25 | 2024-12-23 | 東京エレクトロン株式会社 | 基板処理方法及びプラズマ処理装置 |
| JP7641170B2 (ja) * | 2021-05-07 | 2025-03-06 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0864585A (ja) * | 1994-06-13 | 1996-03-08 | Matsushita Electric Ind Co Ltd | プラズマ発生加工方法およびその装置 |
| CN104465365A (zh) * | 2013-09-24 | 2015-03-25 | 东京毅力科创株式会社 | 等离子体处理方法 |
| CN104576355A (zh) * | 2013-10-15 | 2015-04-29 | 东京毅力科创株式会社 | 等离子体处理方法 |
| CN105374756A (zh) * | 2014-08-08 | 2016-03-02 | 东京毅力科创株式会社 | 多层膜的蚀刻方法 |
| CN105390387A (zh) * | 2014-08-29 | 2016-03-09 | 东京毅力科创株式会社 | 蚀刻方法 |
| CN105914144A (zh) * | 2015-02-24 | 2016-08-31 | 东京毅力科创株式会社 | 蚀刻方法 |
| CN106206287A (zh) * | 2015-05-29 | 2016-12-07 | 东京毅力科创株式会社 | 蚀刻方法 |
| JP2017118091A (ja) * | 2015-12-18 | 2017-06-29 | 東京エレクトロン株式会社 | エッチング方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0936103A (ja) * | 1995-07-18 | 1997-02-07 | Ulvac Japan Ltd | 半導体ウェハのエッチング及びレジスト除去のための方法並びに装置 |
| JP2001102362A (ja) * | 1999-09-30 | 2001-04-13 | Advanced Display Inc | コンタクトホールの形成方法およびその形成方法を用いて製造された液晶表示装置 |
| JP2003229411A (ja) * | 2002-02-01 | 2003-08-15 | Toshiba Corp | 薄膜トランジスタの製造方法 |
| JP2005277375A (ja) * | 2004-02-27 | 2005-10-06 | Nec Electronics Corp | 半導体装置の製造方法 |
| JP2009105279A (ja) * | 2007-10-24 | 2009-05-14 | Fujitsu Microelectronics Ltd | 半導体装置の製造方法及び半導体装置 |
| US9384992B2 (en) * | 2012-02-09 | 2016-07-05 | Tokyo Electron Limited | Plasma processing method |
| JP5968130B2 (ja) * | 2012-07-10 | 2016-08-10 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| JP6267953B2 (ja) * | 2013-12-19 | 2018-01-24 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| JP6230930B2 (ja) * | 2014-02-17 | 2017-11-15 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| JP6408903B2 (ja) | 2014-12-25 | 2018-10-17 | 東京エレクトロン株式会社 | エッチング処理方法及びエッチング処理装置 |
| JP6339961B2 (ja) * | 2015-03-31 | 2018-06-06 | 東京エレクトロン株式会社 | エッチング方法 |
| US9613824B2 (en) * | 2015-05-14 | 2017-04-04 | Tokyo Electron Limited | Etching method |
| JP6541439B2 (ja) * | 2015-05-29 | 2019-07-10 | 東京エレクトロン株式会社 | エッチング方法 |
| JP2017033982A (ja) * | 2015-07-29 | 2017-02-09 | 東京エレクトロン株式会社 | 多層膜をエッチングする方法 |
| JP6604833B2 (ja) * | 2015-12-03 | 2019-11-13 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| US20180286707A1 (en) * | 2017-03-30 | 2018-10-04 | Lam Research Corporation | Gas additives for sidewall passivation during high aspect ratio cryogenic etch |
-
2017
- 2017-08-01 JP JP2017149186A patent/JP6948181B2/ja active Active
-
2018
- 2018-07-27 TW TW107125955A patent/TWI765077B/zh active
- 2018-07-31 SG SG10201806550PA patent/SG10201806550PA/en unknown
- 2018-07-31 US US16/050,455 patent/US20190043721A1/en not_active Abandoned
- 2018-07-31 KR KR1020180089239A patent/KR102531961B1/ko active Active
- 2018-08-01 CN CN201810862184.0A patent/CN109326517B/zh active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0864585A (ja) * | 1994-06-13 | 1996-03-08 | Matsushita Electric Ind Co Ltd | プラズマ発生加工方法およびその装置 |
| CN104465365A (zh) * | 2013-09-24 | 2015-03-25 | 东京毅力科创株式会社 | 等离子体处理方法 |
| CN104576355A (zh) * | 2013-10-15 | 2015-04-29 | 东京毅力科创株式会社 | 等离子体处理方法 |
| CN105374756A (zh) * | 2014-08-08 | 2016-03-02 | 东京毅力科创株式会社 | 多层膜的蚀刻方法 |
| CN105390387A (zh) * | 2014-08-29 | 2016-03-09 | 东京毅力科创株式会社 | 蚀刻方法 |
| CN105914144A (zh) * | 2015-02-24 | 2016-08-31 | 东京毅力科创株式会社 | 蚀刻方法 |
| CN106206287A (zh) * | 2015-05-29 | 2016-12-07 | 东京毅力科创株式会社 | 蚀刻方法 |
| JP2017118091A (ja) * | 2015-12-18 | 2017-06-29 | 東京エレクトロン株式会社 | エッチング方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019029561A (ja) | 2019-02-21 |
| JP6948181B2 (ja) | 2021-10-13 |
| CN109326517A (zh) | 2019-02-12 |
| TWI765077B (zh) | 2022-05-21 |
| SG10201806550PA (en) | 2019-03-28 |
| US20190043721A1 (en) | 2019-02-07 |
| TW201911411A (zh) | 2019-03-16 |
| KR102531961B1 (ko) | 2023-05-12 |
| KR20190013663A (ko) | 2019-02-11 |
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