JP6948181B2 - 多層膜をエッチングする方法 - Google Patents

多層膜をエッチングする方法 Download PDF

Info

Publication number
JP6948181B2
JP6948181B2 JP2017149186A JP2017149186A JP6948181B2 JP 6948181 B2 JP6948181 B2 JP 6948181B2 JP 2017149186 A JP2017149186 A JP 2017149186A JP 2017149186 A JP2017149186 A JP 2017149186A JP 6948181 B2 JP6948181 B2 JP 6948181B2
Authority
JP
Japan
Prior art keywords
gas
multilayer film
mask
plasma
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017149186A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019029561A (ja
JP2019029561A5 (enExample
Inventor
拓 後平
拓 後平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2017149186A priority Critical patent/JP6948181B2/ja
Priority to TW107125955A priority patent/TWI765077B/zh
Priority to KR1020180089239A priority patent/KR102531961B1/ko
Priority to US16/050,455 priority patent/US20190043721A1/en
Priority to SG10201806550PA priority patent/SG10201806550PA/en
Priority to CN201810862184.0A priority patent/CN109326517B/zh
Publication of JP2019029561A publication Critical patent/JP2019029561A/ja
Publication of JP2019029561A5 publication Critical patent/JP2019029561A5/ja
Application granted granted Critical
Publication of JP6948181B2 publication Critical patent/JP6948181B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2017149186A 2017-08-01 2017-08-01 多層膜をエッチングする方法 Active JP6948181B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2017149186A JP6948181B2 (ja) 2017-08-01 2017-08-01 多層膜をエッチングする方法
TW107125955A TWI765077B (zh) 2017-08-01 2018-07-27 多層膜之蝕刻方法
US16/050,455 US20190043721A1 (en) 2017-08-01 2018-07-31 Method of etching multilayered film
SG10201806550PA SG10201806550PA (en) 2017-08-01 2018-07-31 Method of etching multilayered film
KR1020180089239A KR102531961B1 (ko) 2017-08-01 2018-07-31 다층막을 에칭하는 방법
CN201810862184.0A CN109326517B (zh) 2017-08-01 2018-08-01 对多层膜进行蚀刻的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017149186A JP6948181B2 (ja) 2017-08-01 2017-08-01 多層膜をエッチングする方法

Publications (3)

Publication Number Publication Date
JP2019029561A JP2019029561A (ja) 2019-02-21
JP2019029561A5 JP2019029561A5 (enExample) 2020-06-25
JP6948181B2 true JP6948181B2 (ja) 2021-10-13

Family

ID=65230491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017149186A Active JP6948181B2 (ja) 2017-08-01 2017-08-01 多層膜をエッチングする方法

Country Status (6)

Country Link
US (1) US20190043721A1 (enExample)
JP (1) JP6948181B2 (enExample)
KR (1) KR102531961B1 (enExample)
CN (1) CN109326517B (enExample)
SG (1) SG10201806550PA (enExample)
TW (1) TWI765077B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11171011B2 (en) * 2018-08-21 2021-11-09 Lam Research Corporation Method for etching an etch layer
JP7228413B2 (ja) * 2019-03-11 2023-02-24 東京エレクトロン株式会社 プラズマ処理方法、及び、プラズマ処理装置
US12469693B2 (en) * 2019-09-17 2025-11-11 Asm Ip Holding B.V. Method of forming a carbon-containing layer and structure including the layer
JP7308110B2 (ja) * 2019-09-17 2023-07-13 東京エレクトロン株式会社 シリコン酸化膜をエッチングする方法及びプラズマ処理装置
JP7292163B2 (ja) * 2019-09-19 2023-06-16 株式会社ディスコ 被加工物の加工方法
JP7604145B2 (ja) * 2019-11-25 2024-12-23 東京エレクトロン株式会社 基板処理方法及びプラズマ処理装置
JP7641170B2 (ja) * 2021-05-07 2025-03-06 東京エレクトロン株式会社 基板処理装置及び基板処理方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3347909B2 (ja) * 1994-06-13 2002-11-20 松下電器産業株式会社 プラズマ発生加工方法およびその装置
JPH0936103A (ja) * 1995-07-18 1997-02-07 Ulvac Japan Ltd 半導体ウェハのエッチング及びレジスト除去のための方法並びに装置
JP2001102362A (ja) * 1999-09-30 2001-04-13 Advanced Display Inc コンタクトホールの形成方法およびその形成方法を用いて製造された液晶表示装置
JP2003229411A (ja) * 2002-02-01 2003-08-15 Toshiba Corp 薄膜トランジスタの製造方法
JP2005277375A (ja) * 2004-02-27 2005-10-06 Nec Electronics Corp 半導体装置の製造方法
JP2009105279A (ja) * 2007-10-24 2009-05-14 Fujitsu Microelectronics Ltd 半導体装置の製造方法及び半導体装置
KR102034556B1 (ko) * 2012-02-09 2019-10-21 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법
JP5968130B2 (ja) * 2012-07-10 2016-08-10 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6207947B2 (ja) * 2013-09-24 2017-10-04 東京エレクトロン株式会社 被処理体をプラズマ処理する方法
JP2015079793A (ja) * 2013-10-15 2015-04-23 東京エレクトロン株式会社 プラズマ処理方法
JP6267953B2 (ja) * 2013-12-19 2018-01-24 東京エレクトロン株式会社 半導体装置の製造方法
JP6230930B2 (ja) * 2014-02-17 2017-11-15 東京エレクトロン株式会社 半導体装置の製造方法
JP6454492B2 (ja) * 2014-08-08 2019-01-16 東京エレクトロン株式会社 多層膜をエッチングする方法
JP6328524B2 (ja) * 2014-08-29 2018-05-23 東京エレクトロン株式会社 エッチング方法
JP6408903B2 (ja) 2014-12-25 2018-10-17 東京エレクトロン株式会社 エッチング処理方法及びエッチング処理装置
JP2016157793A (ja) * 2015-02-24 2016-09-01 東京エレクトロン株式会社 エッチング方法
JP6339961B2 (ja) * 2015-03-31 2018-06-06 東京エレクトロン株式会社 エッチング方法
US9613824B2 (en) * 2015-05-14 2017-04-04 Tokyo Electron Limited Etching method
JP6541439B2 (ja) * 2015-05-29 2019-07-10 東京エレクトロン株式会社 エッチング方法
JP6494424B2 (ja) * 2015-05-29 2019-04-03 東京エレクトロン株式会社 エッチング方法
JP2017033982A (ja) * 2015-07-29 2017-02-09 東京エレクトロン株式会社 多層膜をエッチングする方法
JP6604833B2 (ja) * 2015-12-03 2019-11-13 東京エレクトロン株式会社 プラズマエッチング方法
JP6498152B2 (ja) * 2015-12-18 2019-04-10 東京エレクトロン株式会社 エッチング方法
US20180286707A1 (en) * 2017-03-30 2018-10-04 Lam Research Corporation Gas additives for sidewall passivation during high aspect ratio cryogenic etch

Also Published As

Publication number Publication date
JP2019029561A (ja) 2019-02-21
KR20190013663A (ko) 2019-02-11
KR102531961B1 (ko) 2023-05-12
TWI765077B (zh) 2022-05-21
CN109326517B (zh) 2023-07-28
TW201911411A (zh) 2019-03-16
SG10201806550PA (en) 2019-03-28
CN109326517A (zh) 2019-02-12
US20190043721A1 (en) 2019-02-07

Similar Documents

Publication Publication Date Title
TWI760555B (zh) 蝕刻方法
JP6948181B2 (ja) 多層膜をエッチングする方法
JP6396699B2 (ja) エッチング方法
JP6423643B2 (ja) 多層膜をエッチングする方法
CN106206286B (zh) 蚀刻方法
JP6211947B2 (ja) 半導体装置の製造方法
TWI697046B (zh) 蝕刻方法
JP6339961B2 (ja) エッチング方法
CN112838002B (zh) 基板处理方法及等离子体处理装置
US11462412B2 (en) Etching method
CN109390229B (zh) 等离子体处理方法和等离子体处理装置
JP2016051750A (ja) エッチング方法
JP6494424B2 (ja) エッチング方法
CN110164764B (zh) 等离子体蚀刻方法和等离子体蚀刻装置
KR102362446B1 (ko) 에칭 방법
TW201937593A (zh) 電漿蝕刻方法及電漿蝕刻裝置
JP6928548B2 (ja) エッチング方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200424

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200424

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20210125

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210202

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210401

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20210824

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20210917

R150 Certificate of patent or registration of utility model

Ref document number: 6948181

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250