CN108538825A - 功率模块 - Google Patents
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Abstract
一种功率模块。防止流过铜块的电流的大小产生波动。具备:中继基板,其在表面和背面分别具有第1导体层和第2导体层;铜块,其插入至在中继基板的厚度方向贯穿的孔,将第1导体层和第2导体层导通;半导体元件,其在与铜块的端面相对的位置具有主电极,一个主电极仅与一个铜块电连接;绝缘基板,其经由接合材料接合于半导体元件的背面;以及封装材料,其对中继基板、铜块、及半导体元件进行封装。
Description
技术领域
本发明涉及功率模块的构造。
背景技术
近年来,在车辆领域、工业机械领域或民用设备领域中,需要小型的功率模块,提出了一种通过使用将导体层设为层叠构造而不设为单层构造的中继基板,从而能够实现小型化的技术。例如,在专利文献1中,通过设为使用中继基板来流过电流的构造,从而成为与单层构造相比小型的功率模块。
专利文献1:日本特开2013-21371公报
但是,在专利文献1的半导体装置中存在如下问题,即,半导体元件与多个导电柱、多个导电柱与通孔分别连接,但如果半导体元件与多个导电柱之间、以及多个导电柱与通孔之间的接触电阻产生波动而使分流比变化,则流过导电柱的电流的大小产生波动,在流过最大电流的导电柱的通电能力不足的情况下,会限制整体的电流的大小。
发明内容
本发明就是为了解决上述问题而提出的,其目的在于得到防止由于分流比变化,而使流过导电柱的电流的大小产生波动的功率模块。
本发明涉及的功率模块的特征在于,具备:中继基板,其在表面和背面分别具有第1导体层和第2导体层;铜块,其插入至在中继基板的厚度方向贯穿的孔,将第1导体层和第2导体层导通;半导体元件,其在与铜块的端面相对的位置具有主电极,一个主电极仅与一个铜块电连接;绝缘基板,其经由接合材料接合于半导体元件的背面;以及封装材料,其对中继基板、铜块、及半导体元件进行封装。
发明的效果
根据本发明涉及的功率模块,通过利用单一的铜块进行半导体元件与铜块的连接,从而能够防止由于分流比变化,而使流过铜块的电流的大小产生波动。
附图说明
图1是表示实施方式1的功率模块的剖视图。
图2是表示经由焊料将铜块和中继基板连接后的功率模块的剖视图。
图3是表示将铜块和外部端子连接后的功率模块的剖视图。
图4是表示实施方式2的功率模块的剖视图。
图5是表示半导体元件的厚度不同的功率模块的剖视图。
图6是表示实施方式3的功率模块的剖视图。
图7是表示将铜块露出至封装材料外部的功率模块的剖视图。
图8是表示将铜块和与外部端子成为一体的部件连接后的功率模块的剖视图。
图9是表示实施方式4的功率模块的剖视图。
标号的说明
1(1a、1b)半导体元件,2焊料,3绝缘基板,3a基座板,3b绝缘层,3c电路图案,4中继基板,4a上表面导体层,4b绝缘板,4c下表面导体层,5接合材料,6铜块,7外部电极,8壳体,9封装材料,11主电极,100功率模块。
具体实施方式
实施方式1
对实施方式1中的功率模块进行说明。图1是表示实施方式1的功率模块的剖视图。此外,在图1以外的其他图中,相同标号表示相同或相当的部分。功率模块100为如下结构,即,半导体元件1(1a、1b)经由焊料2与绝缘基板3的表面接合,中继基板4配置于绝缘基板3的表面的上方而经由铜块6与半导体元件1电连接。
就图1所示的功率模块而言,半导体元件1是作为开关元件的IGBT,经由焊料2与电路图案3c的表面接合。此外,半导体元件也可以为IGBT以外的MOSFET或者二极管等。
绝缘基板3由基座板3a、绝缘层3b、以及电路图案3c构成,基座板3a和电路图案3c例如由铜形成。绝缘层3b例如既可以由无机陶瓷材料形成,也可以由将陶瓷粉末分散于环氧树脂等热固性树脂中而得到的材料形成。就半导体元件1而言,半导体元件1的背面电极,即,在IGBT的情况下,集电极(collector)电极(electrode)经由焊料与绝缘基板3连接,确保与功率模块100的外部的电绝缘。
中继基板4具备:绝缘板4b;作为第1导体层的表面导体层4a,其处在绝缘板4b的表面;以及作为第2导体层的背面导体层4c,其处在绝缘板4b的背面,例如,在由玻璃环氧基板构成的绝缘板的两面具有厚度大于或等于0.2mm的导电性部件。此外,就中继基板4而言,只要实现3维的配线,则能够进行各种变形。例如,也可以通过在中继基板使用大于或等于3层导体而提高配线的自由度。在该情况下,通过准备大于或等于两个绝缘板,由导体夹着各绝缘板,由此成为由大于或等于3层导体构成的中继基板。
在中继基板4,设置有在中继基板的厚度方向贯穿的孔,在孔设置有将处于绝缘板4b的两面的导体层连接的连接部20。就连接部20而言,只要将处于绝缘板4b的两面的导体层电连接即可,没有特别限定,例如为铜镀层。将铜块6压接于连接部20,确保半导体元件1和中继基板4的导通面积。在与铜块6的端面相对的位置存在半导体元件1的主电极11,铜块6的背面和半导体元件1的主电极11经由焊料电连接。此处,一个主电极11仅与一个铜块6电连接。即,被连接的主电极与铜块为一对一的关系。此外,如图2所示,通过将铜块6所压接的部位和连接部20焊接,从而牢固地进行铜块6和中继基板4的连接,由此能够使通电效果提高。
外部端子7a与电路图案3c电连接,用于进行与外部的电信号的交换。此外,也可以将外部端子7a插入形成于壳体8。并且,也可以贯穿中继基板地设置。在该情况下,用于供外部电极贯穿的贯穿孔在中继基板的规定的位置设置有至少一个即可。
外部端子7b、7c与中继基板4的表面导体层4a电连接,用于进行与外部的电信号的交换。在图1中将外部端子7b、7c设为L字状而示出,但也可以为圆筒状。此外,如图3所示,外部端子7b、7c也可以不与中继基板4的表面导体层4a接合,而是与铜块6接合。
绝缘基板3、半导体元件1及中继基板4被壳体8包围。壳体8由塑性树脂等形成。在壳体8的内部填充有封装材料9。就封装材料9而言,只要为具有绝缘性的材料,就没有特别限定,例如为环氧树脂。铜块、中继基板4及半导体元件1被封装材料9覆盖。外部端子的一部分被封装材料9覆盖,但为了与外部进行信号的交换,端子的一部分延伸至封装材料9的外部。另外,绝缘基板3的背面从封装材料9露出,由散热器(未图示)冷却。
在图1中,对半导体元件为IGBT的情况下的电路结构进行说明。通过将半导体元件1a与半导体元件1b串联连接,对每一者并联连接二极管(未图示),从而形成逆变器电路。外部端子7a是作为功率模块的主端子的P端子,与作为半导体元件1a的背面电极的集电极电极电连接。作为半导体元件1a的表面电极(主电极11)的发射极电极经由单一的铜块与外部端子7b连接,外部端子7b成为输出端子。外部端子7b与半导体元件1b的集电极电极电连接。半导体元件1b的发射极电极经由单一的铜块与外部端子7c连接,外部端子7c成为作为功率模块的主端子的N端子。当然也可以构成与上述电路结构不同的电路。
根据该实施方式1的功率模块,实现如下效果,即,通过针对一个主电极而利用单一的铜块进行半导体元件和中继基板的连接,从而防止由于分流比变化而使流过铜块的电流的大小产生波动。另外,实现如下效果,即,在不使用单一铜块而是使用多个铜块的情况下,需要在多个铜块之间设置间隔,但通过设为单一的铜块,从而不需要设置固定的间隔,能够将功率模块小型化。并且,实现如下效果,即,通过针对一个主电极而利用单一的铜块进行半导体元件和中继基板的连接,从而与使用多个铜块的情况相比不需要设置间隔,能够对热容量大的部件进行接合,能够提高瞬态时间范围的散热性。
实施方式2
对实施方式2的功率模块进行说明。图4是表示实施方式2的功率模块的剖视图。就实施方式2的功率模块而言,铜块6的背面位于相比于中继基板4的背面向下方凸出的位置。
根据该实施方式2的功率模块,实现如下效果,即,通过使铜块6的背面位于相比于中继基板4的背面而向下方凸出的位置,从而容易进行在铜块6和半导体元件1的接合时所使用的焊料厚度的调整。另外,如图5所示,即使在半导体元件1的厚度不同的情况下,通过对铜块6的高度进行调整,从而能够抑制中继基板的倾斜并且将焊料厚度优化。
实施方式3
对实施方式3的功率模块进行说明。图6是表示实施方式3的功率模块的剖视图。就实施方式3的功率模块而言,铜块6的表面位于相比于中继基板4的表面而向上方凸出的位置,铜块6的表面从封装材料9露出。
根据该实施方式3的功率模块,实现如下效果,即,通过使铜块6的表面位于相比于中继基板4的表面而向上方凸出的位置,铜块6的表面从封装材料9露出,从而能够从露出的部位对铜块6进行加热,能够从功率模块的外部容易地进行铜块6和半导体元件1的焊接。此外,如图7所示,也可以通过将铜块6露出至封装材料9的外部而用作外部电极。并且,如图8所示,通过使铜块的露出的部分成为端子形状,从而能够容易地与外部部件连接。
实施方式4
对实施方式4的功率模块进行说明。图9是表示实施方式4的功率模块的剖视图。实施方式4的功率模块在铜块6的背面具备凹部。
根据该实施方式4的功率模块,实现如下效果,即,通过使铜块6的背面具备凹部,从而抑制在铜块6和半导体元件1的接合时所使用的焊料的溢出。此外,凹部的形状在图9示出了梯形形状,但也可以为长方形形状、正方形形状、三角形形状、半圆状,还可以为多个凹部。
此外,本发明能够在其发明的范围内将各实施方式及变形例自由地组合,将各实施方式适当地变形、省略。
另外,将部件和部件接合的方式并不限于焊料,能够利用所有导电性接合材料。作为导电性接合材料,优选利用使用了金属填充物的金属膏剂、或通过热量而金属化的烧结金属等电阻低的金属。
Claims (5)
1.一种功率模块,其特征在于,具备:
中继基板,其在表面和背面分别具有第1导体层和第2导体层;
铜块,其插入至在所述中继基板的厚度方向贯穿的孔,将所述第1导体层和所述第2导体层导通;
半导体元件,其在与所述铜块的端面相对的位置具有主电极,一个所述主电极仅与一个所述铜块电连接;
绝缘基板,其经由接合材料接合于所述半导体元件的背面;以及
封装材料,其对所述中继基板、所述铜块、及所述半导体元件进行封装。
2.根据权利要求1所述的功率模块,其特征在于,
所述第2导体层和所述半导体元件相对,所述铜块的与所述主电极相对的端面相对于所述第2导体层凸出。
3.根据权利要求1或2所述的功率模块,其特征在于,
所述铜块的端部从所述封装部件露出。
4.根据权利要求1~3中任一项所述的功率模块,其特征在于,
所述铜块的从所述封装部件露出的端部呈端子形状。
5.根据权利要求1~4中任一项所述的功率模块,其特征在于,
在所述铜块的与所述主电极相对的端面具备凹部。
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