WO2012011210A1 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- WO2012011210A1 WO2012011210A1 PCT/JP2011/001735 JP2011001735W WO2012011210A1 WO 2012011210 A1 WO2012011210 A1 WO 2012011210A1 JP 2011001735 W JP2011001735 W JP 2011001735W WO 2012011210 A1 WO2012011210 A1 WO 2012011210A1
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- WIPO (PCT)
- Prior art keywords
- semiconductor element
- semiconductor device
- die pad
- pad portion
- lead frame
- Prior art date
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Definitions
- the present invention relates to a semiconductor device and a manufacturing method thereof.
- inverter control devices are required to be further reduced in size and weight, and in response to the demand, semiconductor devices such as power modules mounted therein are also required to be reduced in size and weight.
- the first lead frame on which the power element is mounted and the second lead frame on which a control element for controlling the power element is arranged three-dimensionally.
- a control element for controlling the power element is arranged three-dimensionally.
- the conventional semiconductor device has a problem that reliability of operation may be lowered. Since the power element performs high-frequency switching operation with a large current, large electromagnetic noise is likely to be generated. The electromagnetic wave noise affects the control element and causes a malfunction, thereby reducing the reliability of the operation.
- the distance between the power element and the control element will become smaller, and the malfunction of the control element due to electromagnetic noise will become a more serious problem.
- the exemplary semiconductor device includes a first lead having a first semiconductor element, a second semiconductor element, and a first die pad portion, and the first semiconductor element is mounted on the first die pad portion.
- a second lead frame having a frame, a second die pad portion, and a second semiconductor element mounted on the second die pad portion; and a surface of the first die pad portion opposite to the first semiconductor element.
- the fixed heat sink, the exterior body formed so as to cover the first semiconductor element and the second semiconductor element, the first end portion exposed to the first surface of the exterior body, and the second end And a noise shield that is in contact with the surface of the first lead frame on which the first semiconductor element is mounted.
- the first end portion is exposed on the first surface of the exterior body, and the second end portion is in contact with the surface on which the first semiconductor element of the first lead frame is mounted. It has. For this reason, it is difficult for electromagnetic noise generated in one semiconductor element to reach the other semiconductor device. Therefore, malfunction of the semiconductor element due to electromagnetic noise is less likely to occur, and reliability can be improved.
- the noise shield is plural, and may be formed in a fence shape that blocks between the first semiconductor element and the second semiconductor element.
- the noise shield may be in contact with the first die pad portion.
- the first die pad portion may have a recess
- the noise shield may have the second end inserted in the recess.
- the first lead frame may have a grounding island, and the noise shield may be electrically connected to the grounding island.
- the grounding island may have a recess
- the noise shield may have the second end inserted into the recess
- the exemplary semiconductor device may further include a circuit board fixed on the first die pad portion, and the first semiconductor element may be mounted on the circuit board.
- the heat radiating plate may have a surface opposite to the surface fixed to the first die pad portion exposed from the second surface opposite to the first surface of the exterior body.
- the noise shield may include a magnetic material.
- the noise shield may have a cross-sectional area in the direction parallel to the first surface larger on the first end side than on the second end side.
- the noise shield may be provided so as to surround the second die pad portion.
- the exemplary semiconductor device may further include an electromagnetic wave absorbing plate provided on the first surface of the exterior body.
- the first semiconductor element may be a power semiconductor element
- the second semiconductor element may be a control element
- a first lead frame in which a first semiconductor element is mounted on a first die pad portion and a second semiconductor element is mounted on a second die pad portion.
- noise shields which may be formed in a fence shape that blocks between the first semiconductor element and the second semiconductor element.
- the exemplary method for manufacturing a semiconductor device may further include a step (e) of fixing the electromagnetic wave absorbing plate to the surface of the exterior body on which the noise shield is formed, after the step (d).
- the circuit board may be fixed to the first die pad portion after the first semiconductor element is mounted on the circuit board.
- the first semiconductor element may be a power semiconductor element
- the second semiconductor element may be a control element
- FIG. 1 is a plan view showing a semiconductor device according to a first embodiment.
- 1 is a bottom view showing a semiconductor device according to a first embodiment.
- 1 is a plan view showing an internal structure of a semiconductor device according to a first embodiment.
- FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 3. It is a top view which shows the modification of the internal structure of the semiconductor device which concerns on 1st Embodiment.
- FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 5. It is sectional drawing which shows 1 process of the manufacturing method of the semiconductor device which concerns on 1st Embodiment. It is sectional drawing which shows 1 process of the manufacturing method of the semiconductor device which concerns on 1st Embodiment.
- FIG. 1 shows a planar configuration viewed from the first surface side of the exterior body of the semiconductor device according to the first embodiment.
- FIG. 2 shows a planar configuration viewed from the second surface side of the exterior body of the semiconductor device according to the present embodiment.
- FIG. 3 shows a planar configuration inside the semiconductor device according to the present embodiment.
- FIG. 4 shows a cross-sectional configuration taken along line IV-IV in FIG.
- the semiconductor device of this embodiment includes a first lead frame 3, a power element 1, a heat sink 2, a control element 4, a second lead frame 5, and an exterior body. 6 and a noise shield 7.
- the first lead frame 3 is made of a highly conductive material such as copper (Cu), and includes a first die pad portion 9 and a plurality of leads.
- the power element 1 is fixed to one surface 9 a (hereinafter referred to as “upper surface”) of the first die pad portion 9 of the first lead frame 3 by, for example, a brazing material 8.
- a bonding pad (not shown) of the power element 1 and a plurality of leads of the first lead frame 3 are electrically connected to each other by a metal member 21.
- the power element 1 is an IGBT (insulated gate bipolar transistor) or a power MOSFET (metal oxide field effect transistor).
- the power element 1 is a lateral power MOSFET with a built-in diode
- the metal member 21 will be described as an aluminum (Al) wire, but gold (Au Or a metal wire such as copper (Cu), an aluminum (Al) ribbon, a copper (Cu) clip, or the like.
- the aluminum ribbon and the copper clip have an advantage that power loss can be reduced because the cross-sectional area is large and the wiring resistance value is small as compared with the aluminum wire.
- the heat radiating plate 2 is fixed to the other surface 9 b (hereinafter referred to as “lower surface”) of the first die pad portion 9 in the first lead frame 3 via an insulating sheet 10.
- the heat radiating plate 2 may be a metal having good thermal conductivity such as copper (Cu) or aluminum (Al).
- the insulating sheet 10 is made of a thermally conductive insulating material, and effectively transmits heat generated from the power element 1 to the heat radiating plate 2.
- the insulating sheet 10 may have a three-layer structure in which an insulating layer is sandwiched between adhesive layers.
- the control element 4 is an element that controls the power element 1 and incorporates a drive circuit and an overcurrent prevention circuit.
- the control element 4 is fixed to one surface 11a (hereinafter referred to as “upper surface”) of the second die pad portion 11 in the second lead frame 5 by, for example, silver (Ag) paste.
- a part of a bonding pad (not shown) of the control element 4 is electrically connected to a plurality of leads of the second lead frame 5 by gold (Au) wires 22.
- Au gold
- a part of the bonding pad is electrically connected to the bonding pad (not shown) of the power element 1 by the gold wire 22, and the power element 1 can be controlled by the control element 4.
- the exterior body 6 is made of, for example, a thermosetting resin such as epoxy, and includes the power element 1, a part of the first lead frame 3 including the first die pad portion 9, the control element 4, and the second die pad portion 11. A part of the second lead frame 5 including the cover and the side surface 2c of the heat sink 2 are covered. As a result, the first lead frame 3 and the second lead frame 5 can be integrated, and the power element 1 and the control element 4 can be protected.
- a thermosetting resin such as epoxy
- the heat radiating plate 2 is made of a material having good thermal conductivity such as copper (Cu) or aluminum (Al), and one surface 2 b (hereinafter referred to as “lower surface”) of the heat radiating plate 2 is the second of the exterior body 6. It is exposed from the surface 6b (hereinafter referred to as “lower surface”). Thereby, the heat generated from the power element 1 can be efficiently transmitted to the outside. Since the side surface 2c of the heat radiating plate 2 is covered with the exterior body 6, the bonding between the heat radiating plate 2 and the first lead frame 3 can be further strengthened.
- the end of the first lead frame 3 and the end of the second lead frame 5 protrude from the side surface of the exterior body 6 and are connected to a circuit such as an inverter control device as a mounting terminal of the semiconductor device.
- the noise shield 7 has a lower end in contact with the first die pad portion 9 of the first lead frame 3 and an upper end exposed from a first surface 6 a (hereinafter referred to as “upper surface”) of the exterior body 6. Embedded in the exterior body 6.
- the noise shield 7 is formed in a shape in which the upper end portion has a larger horizontal cross-sectional area than the lower end portion. For example, a truncated cone shape whose diameter gradually increases from the lower end toward the upper end.
- the noise shield 7 may be a resin molded body obtained by mixing magnetic powder such as metal oxide particles or ferrite powder having magnetism such as chromium oxide or nickel oxide in a resin.
- the noise shield 7 is made of a conductive material such as a resin molded body in which a conductive metal such as nickel (Ni) or carbon powder is mixed in an epoxy resin or the like
- the first die pad 9 is electrically connected. Is electrically connected to the GND of the inverter control device via the ground (GND) terminal of the power element 1 connected to the power supply.
- the noise shield 7 is formed in a fence shape that blocks between the power element 1 and the control element 4.
- the power element 1 when viewed from one surface 1 a (hereinafter referred to as “upper surface”) side of the power element 1, the power element 1 is formed in a row so as to cross between the power element 1 and the control element 4. .
- the three sides excluding the side where the lead of the second die pad portion 11 on which the control element 4 is mounted are fixed are surrounded. It may be provided as follows.
- noise shielding body 7 is provided so as to have a fence shape for shielding. Further, a plurality of rows of noise shields 7 may be formed between the power element 1 and the control element 4.
- the noise shield 7 from the upper surface 6a of the exterior body 6 to the upper surface 9a of the first die pad portion 9 is viewed from the upper surface 1a side of the power element 1, the power element 1 and the control element A plurality of rails are arranged at intervals from each other in the shape of a fence that blocks the gap between them. For this reason, part of the electromagnetic wave noise generated from the power element 1 is absorbed by the noise shield 7. Further, when the noise shield 7 is conductive, electromagnetic noise flows to the first die pad portion 9 side through the noise shield 7. As a result, the amount of electromagnetic noise reaching the control element 4 can be reduced to prevent the control element 4 from malfunctioning and to improve reliability.
- the noise shield 7 serving as a vertical lattice of the fence has a large vertical sectional area. Since the area (lower end) where the first die pad portion 9 and the noise shield 7 are connected is restricted by the size of the power element 1 mounted on the first die pad portion 9, the noise shield 7 In the case of a cylindrical shape, it is difficult to increase the vertical cross-sectional area of the noise shield 7.
- the noise shielding body 7 has a truncated cone shape whose diameter increases from the first die pad portion 9 toward the upper surface 6 a of the exterior body 6. For this reason, the vertical cross-sectional area of the noise shield 7 can be made larger than when the cylindrical noise shield 7 is provided. As a result, the amount of electromagnetic noise generated from the power element 1 and reaching the control element 4 can be reduced, so that the malfunction of the control element 4 can be more effectively prevented.
- the noise shield 7 has a higher thermal conductivity than the exterior body 6, the heat generated from the power element 1 can be efficiently radiated from the upper surface 6 a side of the exterior body 6 of the noise shield 7. As a result, the influence of the heat generated from the power element 1 on the control element 4 can be reduced.
- the heat radiating plate 2 to which the insulating sheet 10 is temporarily bonded is placed in the cavity of the lower mold 12 with the surface opposite to the insulating sheet 10 facing down.
- the first lead frame 3 and the second lead frame 5 are connected to a predetermined die of the lower mold 12 so that the lower surface 9b of the first die pad portion 9 of the first lead frame 3 is in contact with the insulating sheet 10. Place in position.
- the upper die 13 is lowered, and the first lead frame 3 and the second lead frame 5 are clamped by the upper die 13 and the lower die 12.
- the upper mold 13 has a plurality of mold insertion pins 14 formed so as to be positioned on the first die pad portion 9 of the first lead frame 3.
- the mold insertion pin 14 is connected to the first die pad portion 9 of the first lead frame 3. Is pressed downward. Thereby, the heat sink 2 attached to the lower surface 9 b of the first die pad portion 9 of the first lead frame 3 is pressed against the lower mold 12.
- At least one mold insertion pin 14 is provided so as to be positioned between the power element 1 and the control element 4 when viewed from the upper surface 1 a side of the power element 1. ing.
- at least the mold insertion pin 14 provided between the power element 1 and the control element 4 is from the contact surface with the first die pad portion 9 of the first lead frame 3. It has a truncated cone shape whose diameter gradually increases upward.
- the shape of the mold insertion pin 14 may be a truncated pyramid shape.
- a sealing resin such as an epoxy resin is injected between the upper mold 13 and the lower mold 12 by a transfer molding method, and the power element 1, the control element 4, and the heat dissipation.
- An exterior body 6 that covers the side surface of the plate 2 is formed. Since the heat sink 2 is pressed against the lower mold 12 by the mold insertion pins 14, the sealing resin does not leak to the lower surface 2 b side of the heat sink 2. Therefore, the lower surface 2b side of the heat radiating plate 2 after sealing is not covered with the sealing resin, and heat radiation to the lower surface 2b side of the heat radiating plate 2 is effectively performed.
- the tip end portion of the mold insertion pin 14 slightly enters the upper surface 9 a of the first die pad portion 9. ing. Therefore, the sealing resin does not flow into the contact surface between the mold insertion pin 14 and the first die pad portion 9.
- an adhesive layer of the insulating sheet 10 disposed between the first die pad portion 9 of the first lead frame 3 and the heat sink 2 by heat propagated from the lower mold 12 and the upper mold 13 melts and hardens. For this reason, the insulating sheet 10, the lower surface 9b of the first die pad portion 9 of the first lead frame 3, and the heat sink 2 can be firmly bonded.
- an opening 15 is formed at the position of the mold insertion pin 14 in the exterior body 6.
- the opening 15 has a truncated cone shape whose diameter increases upward from the first die pad portion 9 of the first lead frame 3.
- the first die pad portion 9 of the first lead frame 3 is exposed on the bottom surface of the opening 15 without the sealing resin adhering thereto.
- the sealing body 16 is taken out from the lower mold 12. Thereafter, a magnetic paste containing magnetic particles such as nickel (Ni), an epoxy resin, and a solvent is applied from above the opening 15 to the inside of the opening 15 by a printing method such as screen printing or a dispensing method. Inject. Then, the noise shielding body 7 is formed in the opening 15 by curing the magnetic paste. Since the bottom surface of the opening 15 is pressed by the mold insertion pin 14 during the sealing process, a recess is formed on the upper surface 9 a of the first die pad portion 9.
- a magnetic paste containing magnetic particles such as nickel (Ni), an epoxy resin, and a solvent is applied from above the opening 15 to the inside of the opening 15 by a printing method such as screen printing or a dispensing method. Inject.
- the noise shielding body 7 is formed in the opening 15 by curing the magnetic paste. Since the bottom surface of the opening 15 is pressed by the mold insertion pin 14 during the sealing process, a recess is formed on the upper surface 9
- the tip of the noise shield 7 is slightly intruded into the upper surface 9a of the first die pad portion 9, and the mechanical contact between the lower surface of the noise shield 7 and the upper surface 9a of the first die pad portion 9 is achieved.
- the combined state is strengthened.
- the noise shield 7 when the noise shield 7 is conductive, the electrical coupling state is also strengthened, and electromagnetic noise generated from the power element 1 is caused to flow to the first die pad portion 9 via the noise shield 7. The effect of reducing noise is improved.
- the viscosity of the magnetic paste when the viscosity of the magnetic paste is high, in order to prevent the formation of voids in the opening 15, it may be subjected to vacuum defoaming and heat curing after application, or heat curing in a vacuum oven. May be. Thereby, the homogeneous noise shielding body 7 can be formed.
- the present invention is not limited to this.
- a frame may be used. Thereby, it is possible to realize a semiconductor device with improved productivity and increased alignment accuracy.
- the noise shield 7 is conductive, electromagnetic noise flows to the first die pad portion 9 side via the noise shield 7. As a result, the amount of electromagnetic noise that reaches the control element 4 can be reduced, the malfunction of the control element 4 can be prevented, and the reliability can be improved.
- FIG. 12 shows a cross-sectional configuration of the semiconductor device according to the second embodiment.
- the semiconductor device of the second embodiment absorbs electromagnetic waves on the surface (upper surface 6a) opposite to the heat radiating plate 2 of the exterior body 6.
- a plate 17 is provided.
- the electromagnetic wave absorbing plate 17 includes, for example, a copper (Cu) plate plated with a magnetic material such as Ni, a conductive metal plate made of a Ni—Fe alloy such as 42 alloy, and a magnetic plate made of a magnetic material such as ferrite. do it.
- an adhesive 18 such as an epoxy resin is applied to the upper surface 6a of the exterior body 6 and the electromagnetic wave absorbing plate 17 is placed.
- the adhesive 18 is thermally cured to form a semiconductor device having the electromagnetic wave absorbing plate 17.
- an insulating sheet may be attached to the upper surface 6a of the exterior body 6 and the electromagnetic wave absorbing plate 17 may be placed, and then thermosetting may be performed.
- the noise shield 7 is formed by thermally curing a magnetic paste containing metal particles having magnetism such as nickel, an epoxy resin and a solvent. For this reason, the upper surface of the noise shield 7 is recessed from the upper surface 6 a of the exterior body 6 due to the curing shrinkage of the magnetic paste. Therefore, as shown in FIG. 11, the electromagnetic wave absorbing plate 17 is not lifted by the upper surface of the noise shield 7 on the upper surface 6 a of the exterior body 6. As a result, the upper surface 6a of the exterior body 6 and the electromagnetic wave absorbing plate 17 can be maintained in a flat state, and can be reliably formed without reducing the adhesive strength.
- the electromagnetic wave noise radiated from the power element 1 but also the external electromagnetic wave noise incident from the upper part of the semiconductor device can be blocked by the newly provided electromagnetic wave absorbing plate 17.
- FIGS. 13 and 14 show a planar configuration and a cross-sectional configuration inside the semiconductor device according to the third embodiment, respectively.
- the semiconductor device of the third embodiment has the same configuration as that of the semiconductor device of the first embodiment, but the noise shield 7 is above the GND island 19. It is different in that it is formed.
- the GND island 19 is formed in, for example, a rectangular shape that is electrically separated from the first die pad portion 9 of the first lead frame 3, and is provided on the upper surface of the heat sink 2 via the insulating sheet 10. ing.
- the power element 1 can be a vertical power MOSFET.
- a noise shield extending in the vertical direction from the upper surface of the exterior body 6 to the GND island 19 at least at a position between the power element 1 and the control element 4. 7 is provided.
- the lower end of the noise shield 7 can be mechanically and electrically connected to the GND island 19.
- a power element whose back surface is a drain electrode can be used.
- a highly versatile semiconductor device can be realized.
- a part of the electromagnetic wave noise radiated from the power element 1 flows to the GND island 19 side through the noise shield 7.
- the amount of electromagnetic noise that reaches the control element 4 can be reduced, the malfunction of the control element 4 can be prevented, and the reliability can be improved.
- the electromagnetic wave absorbing plate 17 may be provided on the upper surface 6a of the exterior body 6.
- FIG. 15 shows a cross-sectional configuration of the semiconductor device according to the fourth embodiment.
- the semiconductor device of the fourth embodiment has substantially the same configuration as the semiconductor device of the first embodiment, but differs in that it has a circuit board 31.
- the circuit board 31 is mounted on the upper surface 9 a of the first die pad portion 9 included in the first lead frame 3.
- One or more power elements 1 are mounted on a circuit pattern 32 formed on one surface 31 a (hereinafter referred to as “upper surface”) of the circuit board 31.
- a noise shield 7 extending in the vertical direction with respect to the upper surface 1 a of the power element 1 is provided from the upper surface 6 a of the exterior body 6 toward the circuit pattern 32.
- electrical connection between the power element 1 and the control element 4 can be performed via the circuit pattern 32.
- the power element 1 is composed of a plurality of elements such as an IGBT and a diode, for example, electrical connection between the plurality of elements can be performed via the circuit pattern 32.
- a semiconductor device having a high degree of design freedom and excellent versatility can be realized.
- a noise shield 7 is provided.
- the lower end of the noise shield 7 can be electrically connected to the first lead frame 3 via a GND portion of the circuit pattern 32 or a through via hole (not shown) formed in the circuit board 31.
- the circuit board 31 since the circuit board 31 is included, the connection between the power element 1 and the control element 4 is easy. Furthermore, even a power element composed of a plurality of elements or the like can be mounted. Therefore, it is possible to easily realize a semiconductor device having a high degree of design freedom and excellent versatility.
- the semiconductor device of the present embodiment even when the noise shield 7 is conductive, a part of the electromagnetic wave noise generated from the power element 1 is connected to the GND portion side of the circuit board 31 or the second through the noise shield 7.
- the first lead frame 3 flows toward the first die pad portion 9 side. As a result, the amount of electromagnetic noise that reaches the control element 4 can be reduced, the malfunction of the control element 4 can be prevented, and the reliability can be improved.
- a power element is mounted on the first lead frame and a control element is mounted on the second lead frame.
- the present invention is not limited to the combination of the power element and the control element, and the same effect can be obtained as long as the semiconductor device encloses a plurality of semiconductor elements in one exterior body.
- a plurality of noise shields 7 are formed is shown, one may be used.
- the present invention can improve the reliability of operation, and is particularly useful as a semiconductor device such as an insulated gate bipolar semiconductor module and an intelligent power module.
Abstract
Description
図1は、第1の実施形態に係る半導体装置の外装体の第1の面側から見た平面構成を示している。図2は、本実施形態に係る半導体装置の外装体の第2の面側から見た平面構成を示している。図3は、本実施形態に係る半導体装置内部の平面構成を示している。図4は、図3のIV-IV線における断面構成を示している。
図12は、第2の実施形態に係る半導体装置の断面構成を示している。図12に示すように、第2の実施形態の半導体装置は、第1の実施形態の半導体装置の構成に加えて、外装体6の放熱板2と反対側の面(上面6a)に電磁波吸収プレート17が設けられている。なお、電磁波吸収プレート17は、例えばNi等の磁性材料によりメッキされた銅(Cu)プレート又は42アロイ等のNi-Fe合金からなる導電性金属プレート及びフェライト等の磁性材料からなる磁性体プレートとすればよい。
図13及び図14はそれぞれ、第3の実施形態に係る半導体装置内部の平面構成及び断面構成を示している。図13及び図14に示すように、第3の実施形態の半導体装置は、第1の実施形態の半導体装置と同様の構成を有しているが、ノイズ遮蔽体7がGND用アイランド19の上に形成されているという点で異なる。GND用アイランド19は、第1のリードフレーム3の第1のダイパッド部9とは電気的に分離した、例えば矩形形状に形成されており、絶縁シート10を介して放熱板2の上面に設けられている。
図15は、第4の実施形態に係る半導体装置の断面構成を示している。図15に示すように第4の実施形態の半導体装置は、第1の実施形態の半導体装置とほぼ同様の構成を有しているが、回路基板31を有している点で異なっている。回路基板31は、第1のリードフレーム3に含まれる第1のダイパッド部9の上面9aに搭載されている。回路基板31の一方の面31a(以下、「上面」と記す)に形成された回路パターン32の上に、1つ以上のパワー素子1が搭載されている。外装体6の上面6aから回路パターン32に向かって、パワー素子1の上面1aに対して鉛直方向に延在するノイズ遮蔽体7が設けられている。
1a 上面
2 放熱板
2b 下面
2c 側面
3 第1のリードフレーム
4 制御素子
5 第2のリードフレーム
6 外装体
6a 第1の面
6b 第2の面
7 ノイズ遮蔽体
8 ろう材
9 第1のダイパッド部
9a 上面
9b 下面
10 絶縁シート
11 第2のダイパッド部
11a 上面
12 下金型
13 上金型
14 金型挿入ピン
15 開口部
16 封止体
17 電磁波吸収プレート
18 接着剤
19 GND用アイランド
21 金属部材
22 金ワイヤー
31 回路基板
31a 上面
32 回路パターン
Claims (18)
- 第1の半導体素子と、
第2の半導体素子と、
第1のダイパッド部を有し、前記第1のダイパッド部に前記第1の半導体素子を搭載した第1のリードフレームと、
第2のダイパッド部を有し、前記第2のダイパッド部に前記第2の半導体素子を搭載した第2のリードフレームと、
前記第1のダイパッド部の前記第1の半導体素子と反対側の面に固定された放熱板と、
前記第1の半導体素子及び前記第2の半導体素子を覆うように形成された外装体と、
第1の端部が前記外装体の第1の面に露出し、第2の端部が前記第1のリードフレームの前記第1の半導体素子を搭載した面と接したノイズ遮蔽体とを備えている半導体装置。 - 前記ノイズ遮蔽体は、複数であり、前記第1の半導体素子と前記第2の半導体素子との間を遮る柵状に形成されている請求項1に記載の半導体装置。
- 前記ノイズ遮蔽体は、前記第1のダイパッド部と接している請求項1に記載の半導体装置。
- 前記第1のダイパッド部は、凹部を有し、
前記ノイズ遮蔽体は、前記第2の端部が前記凹部に挿入されている請求項3に記載の半導体装置。 - 前記第1のリードフレームは、接地用アイランドを有し、
前記ノイズ遮蔽体は、前記接地用アイランドと電気的に接続されている請求項1に記載の半導体装置。 - 前記接地用アイランドは、凹部を有し、
前記ノイズ遮蔽体は、前記第2の端部が前記凹部に挿入されている請求項5に記載の半導体装置。 - 前記第1のダイパッド部の上に固定された回路基板をさらに有し、
前記第1の半導体素子は、前記回路基板に実装されている請求項1に記載の半導体装置。 - 前記放熱板は、前記第1のダイパッド部と固定された面と反対側の面が、前記外装体の前記第1の面と反対側の第2の面から露出している請求項1に記載の半導体装置。
- 前記ノイズ遮蔽体は、磁性材料を含む請求項1に記載の半導体装置。
- 前記ノイズ遮蔽体は、前記第1の面と並行な方向の断面の面積が、前記第1の端部側において前記第2の端部側よりも大きい請求項1に記載の半導体装置。
- 前記ノイズ遮蔽体は、複数であり、前記第2のダイパッド部を囲むように設けられている請求項1に記載の半導体装置。
- 前記外装体の第1の面に設けられた電磁波吸収プレートをさらに備えている請求項1に記載の半導体装置。
- 前記第1の半導体素子は、パワー半導体素子であり、
前記第2の半導体素子は、制御素子である請求項1に記載の半導体装置。 - 第1のダイパッド部の上に第1の半導体素子が搭載された第1のリードフレームと、第2のダイパッド部の上に第2の半導体素子が搭載された第2のリードフレームとを、下金型の所定の位置に載置する工程(a)と、
前記工程(a)よりも後に、金型挿入ピンを有する上金型を、前記金型挿入ピンが前記第1のリードフレームの前記第1の半導体素子を搭載した面と当接するように配置する工程(b)と、
前記上金型と前記下金型との間に樹脂を注入し、前記第1の半導体素子及び前記第2の半導体素子を覆い、前記金型挿入ピンに対応した開口部を有する外装体を形成する工程(c)と、
前記開口部内にノイズ遮蔽体を形成する工程(d)とを備え、
前記第1のダイパッド部における前記第1の半導体素子と反対側の面には、放熱板が絶縁シートを介して固定されており、
前記ノイズ遮蔽体は、前記第1の半導体素子と前記第2の半導体素子との間に形成されている半導体装置の製造方法。 - 前記ノイズ遮蔽体は、複数であり、前記第1の半導体素子と前記第2の半導体素子との間を遮る柵状に形成されている請求項14に記載の半導体装置の製造方法。
- 前記工程(d)よりも後に、前記外装体における前記ノイズ遮蔽体が形成されている面に電磁波吸収プレートを固定する工程(e)をさらに備えている請求項14に記載の半導体装置の製造方法。
- 前記第1の半導体素子を回路基板に実装した後、前記回路基板を前記第1のダイパッド部に固定する請求項14に記載の半導体装置の製造方法。
- 前記第1の半導体素子は、パワー半導体素子であり、
前記第2の半導体素子は、制御素子である請求項14に記載の半導体装置の製造方法。
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