CN102893396A - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
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- CN102893396A CN102893396A CN2011800238334A CN201180023833A CN102893396A CN 102893396 A CN102893396 A CN 102893396A CN 2011800238334 A CN2011800238334 A CN 2011800238334A CN 201180023833 A CN201180023833 A CN 201180023833A CN 102893396 A CN102893396 A CN 102893396A
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- semiconductor device
- semiconductor element
- noise isolation
- die pad
- pad portion
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Abstract
本发明公开了一种半导体装置及其制造方法。半导体装置包括第一半导体元件(1)、第二半导体元件(4)、第一引线架(3)和第二引线架(5),第一引线架(3)具有第一芯片垫部(9),并在第一芯片垫部(9)上安装有第一半导体元件(1),第二引线架(5)具有第二芯片垫部(11),并在第二芯片垫部(11)上安装有第二半导体元件(4)。在第一芯片垫部(9)的与第一半导体元件(1)相反一侧的面上固定有放热板(2)。形成有覆盖第一半导体元件(1)和第二半导体元件(4)的外装部件(6)。噪音屏蔽部件(7)的第一端部在外装部件(6)的第一面上露出,第二端部与第一引线架(3)的安装有第一半导体元件(1)的面接触。
Description
技术领域
本发明涉及一种半导体装置及其制造方法。
背景技术
例如变频控制设备被要求该设备进一步实现小型化和轻量化。应对该要求,安装在变频控制设备内部的电源模块等半导体装置也被要求该装置达成小型化和轻量化。
为进一步将电源模块小型化、轻量化,正在研究下述方案,即:三维地设置安装有功率元件的第一引线架和安装有对功率元件进行控制的控制元件的第二引线架(参照例如专利文献1)。通过将三维地设置好的功率元件和控制元件封入由树脂制成的外装部件内,则能够期待达成半导体装置的小型化和轻量化。
专利文献1:日本公开特许公报特开2005-150595号公报
发明内容
-发明要解决的技术问题-
然而,上述现有半导体装置存在工作可靠性有可能下降的问题。因为功率元件进行大电流的高频开关操作,所以易产生较大的电磁波噪音。因为电磁波噪音会影响到控制元件而使其产生误工作,所以会使半导体装置的工作可靠性下降。
今后,若半导体装置的小型化进一步发展,功率元件和控制元件的间距就会进一步缩短,控制元件在电磁波噪音的影响下所造成的误工作会成为更为深刻的问题。
本发明正是鉴于上述问题而完成的。其目的在于:实现一种提高了工作可靠性的半导体装置。
-用以解决技术问题的技术方案-
具体而言,示例的半导体装置包括第一半导体元件、第二半导体元件、第一引线架、第二引线架、放热板、外装部件和噪音屏蔽部件,该第一引线架具有第一芯片垫部,并在第一芯片垫部上安装有第一半导体元件,该第二引线架具有第二芯片垫部,并在第二芯片垫部上安装有第二半导体元件,该放热板固定在第一芯片垫部的与第一半导体元件相反一侧的面上,该外装部件覆盖第一半导体元件和第二半导体元件而形成,该噪音屏蔽部件的第一端部在外装部件的第一面上露出,第二端部与第一引线架的安装有第一半导体元件的面接触。
示例的半导体装置包括噪音屏蔽部件,该噪音屏蔽部件的第一端部在外装部件的第一面上露出,该噪音屏蔽部件的第二端部与第一引线架的安装有第一半导体元件的面接触。因此,在一半导体元件中产生的电磁波噪音难以到达另一半导体装置。因此,半导体元件难以由于电磁波噪音而产生误工作,其结果是能够提高可靠性。
在示例的半导体装置中也可以是这样的,即:噪音屏蔽部件的个数为多个,多个噪音屏蔽部件形成为将第一半导体元件和第二半导体元件之间隔断的栅状。
在示例的半导体装置中也可以是这样的,即:噪音屏蔽部件与第一芯片垫部接触。
在示例的半导体装置中也可以是这样的,即:第一芯片垫部具有凹部,噪音屏蔽部件的第二端部插入凹部内。
在示例的半导体装置中也可以是这样的,即:第一引线架具有接地用岛(ground island),噪音屏蔽部件与接地用岛电连接。
在示例的半导体装置中也可以是这样的,即:接地用岛具有凹部,噪音屏蔽部件的第二端部插入凹部内。
在示例的半导体装置中也可以是这样的,即:该半导体装置还具有固定在第一芯片垫部上的电路板,第一半导体元件安装在电路板上。
在示例的半导体装置中也可以是这样的,即:放热板的和与第一芯片垫部固定在一起的面相反一侧的面从外装部件的与第一面相反一侧的第二面露出。
在示例的半导体装置中也可以是这样的,即:噪音屏蔽部件含有磁性材料。
在示例的半导体装置中这样设定即可,即:在噪音屏蔽部件中,第一端部一侧在与第一面平行的方向上的剖面面积比第二端部一侧在与第一面平行的方向上的剖面面积大。
在示例的半导体装置中也可以是这样的,即:噪音屏蔽部件包围第二芯片垫部而设。
在示例的半导体装置中也可以是这样的,即:该半导体装置还包括设置在外装部件的第一面上的电磁波吸收板。
在示例的半导体装置中也可以是这样的,即:第一半导体元件为功率半导体元件,第二半导体元件为控制元件。
示例的半导体装置的制造方法包括工序(a)、工序(b)、工序(c)和工序(d),在该工序(a)中,将在第一芯片垫部上安装有第一半导体元件的第一引线架和在第二芯片垫部上安装有第二半导体元件的第二引线架放置在下模的规定位置上,在该工序(b)中,在工序(a)之后放置具有多个模具插针的上模,来使模具插针与第一引线架的安装有第一半导体元件的面接触,在该工序(c)中,将树脂注入上模和下模之间,形成覆盖第一半导体元件和第二半导体元件且具有多个对应于模具插针的开口部的外装部件,在该工序(d)中,在开口部内形成噪音屏蔽部件,在第一芯片垫部的与第一半导体元件相反一侧的面上夹着绝缘薄片固定有放热板,噪音屏蔽部件形成在第一半导体元件和第二半导体元件之间。
在示例的半导体装置的制造方法中也可以是这样的,即:噪音屏蔽部件的个数为多个,多个噪音屏蔽部件形成为将第一半导体元件和第二半导体元件之间隔断的栅状。
在示例的半导体装置的制造方法中也可以是这样的,即:该半导体装置的制造方法还包括工序(e),在该工序(e)中,在工序(d)之后将电磁波吸收板固定在外装部件的形成有噪音屏蔽部件的面上。
在示例的半导体装置的制造方法中也可以是这样的,即:在将第一半导体元件安装在电路板上后,将电路板固定在第一芯片垫部上。
在示例的半导体装置的制造方法中也可以是这样的,即:第一半导体元件为功率半导体元件,第二半导体元件为控制元件。
-发明的效果-
根据本发明中的半导体装置和半导体装置的制造方法,能够实现提高了工作可靠性的半导体装置。
附图说明
图1是俯视图,显示第一实施方式所涉及的半导体装置。
图2是仰视图,显示第一实施方式所涉及的半导体装置。
图3是俯视图,显示第一实施方式所涉及的半导体装置的内部结构。
图4是沿图3中的IV-IV线的剖视图。
图5是俯视图,显示第一实施方式所涉及的半导体装置的内部结构的变形例。
图6是沿图5中的VI-VI线的剖视图。
图7是剖视图,显示第一实施方式所涉及的半导体装置的制造方法中的一工序。
图8是剖视图,显示第一实施方式所涉及的半导体装置的制造方法中的一工序。
图9是剖视图,显示第一实施方式所涉及的半导体装置的制造方法中的一工序。
图10是剖视图,显示第一实施方式所涉及的半导体装置的制造方法中的一工序。
图11是剖视图,显示第一实施方式所涉及的半导体装置的制造方法中的一工序。
图12是剖视图,显示第二实施方式所涉及的半导体装置。
图13是俯视图,显示第三实施方式所涉及的半导体装置的内部结构。
图14是沿图13中的XIV-XIV线的剖视图。
图15是剖视图,显示第四实施方式所涉及的半导体装置。
图16是剖视图,显示第四实施方式所涉及的半导体装置的变形例。
-符号说明-
1-功率元件;1a-上表面;2-放热板;2b-下表面;2c-侧面;3-第一引线架;4-控制元件;5-第二引线架;6-外装部件;6a-第一面;6b-第二面;7-噪音屏蔽部件;8-焊料;9-第一芯片垫部;9a-上表面;9b-下表面;10-绝缘薄片;11-第二芯片垫部;11a-上表面;12-下模;13-上模;14-模具插针;15-开口部;16-密封部件;17-电磁波吸收板;18-粘接剂;19-接地(GND)用岛;21-金属部件;22-金线;31-电路板;31a-上表面;32-电路图案。
具体实施方式
下面,参照附图对本发明的实施方式加以说明。应予说明,本发明只要基于在本公开内容中所记载的基本特征即可,并不限于以下所记载的内容。
(第一实施方式)
图1显示从外装部件的第一面一侧看到的、第一实施方式所涉及的半导体装置的平面结构。图2显示从外装部件的第二面一侧看到的、本实施方式所涉及的半导体装置的平面结构。图3显示本实施方式所涉及的半导体装置内部的平面结构。图4显示沿图3中的IV-IV线的剖面结构。
如图1~图4所示,本实施方式中的半导体装置具有第一引线架3、功率元件1、放热板2、控制元件4、第二引线架5、外装部件6和噪音屏蔽部件7。
如图3和图4所示,第一引线架3由铜(Cu)等导电性较高的材料形成,包括第一芯片垫部9和多条引线。功率元件1通过例如焊料8固定在第一引线架3的第一芯片垫部9的一面9a(以下记载为“上表面”)上。功率元件1的焊盘(未图示)和第一引线架3的多条引线通过金属部件21相互电连接。应予说明,功率元件1是IGBT(绝缘栅双极型晶体管)或功率MOSFET(金属氧化物半导体场效应晶体管)等。以下,对功率元件1是内置有二极管的横向导电结构功率MOSFET的情况加以说明。虽然下面在金属部件21为铝(Al)线的前提下加以说明,但也可以使用金(Au)或铜(Cu)等金属线、铝(Al)带或铜(Cu)片(clip)等,来代替铝线。因为与铝线相比铝带和铜片的剖面面积更大,布线电阻值更小,所以当使用铝带或铜片时,有能够减小功耗的优点。
在第一引线架3的第一芯片垫部9的另一面9b(以下记载为“下表面”)上,夹着绝缘薄片10固定有放热板2。放热板2由铜(Cu)或铝(Al)等导热性较高的金属形成即可。
绝缘薄片10由具有导热性的绝缘材料形成,将功率元件1所产生的热有效地传递给放热板2。绝缘薄片10具有例如用粘接层夹住绝缘层而成的三层结构即可。
控制元件4是对功率元件1进行控制的元件,内置有驱动电路和过电流防止电路等。控制元件4通过例如银(Ag)浆固定在第二引线架5的第二芯片垫部11的一面11a(以下记载为“上表面”)上。控制元件4的焊盘(未图示)的一部分通过金(Au)线22与第二引线架5的多条引线电连接。焊盘的一部分通过金线22与功率元件1的焊盘(未图示)电连接,能够用控制元件4对功率元件1进行控制。
外装部件6由例如环氧树脂等热固性树脂形成。外装部件6覆盖功率元件1、第一引线架3的包括第一芯片垫部9在内的一部分、控制元件4、第二引线架5的包括第二芯片垫部11在内的一部分以及放热板2的侧面2c。这么一来,能够使第一引线架3和第二引线架5为一体,并保护功率元件1和控制元件4。
放热板2由铜(Cu)或铝(Al)等导热性较高的材料形成,放热板2的一面2b(以下记载为“下表面”)从外装部件6的第二面6b(以下记载为“下表面”)露出。这么一来,能够效率较高地将功率元件1所产生的热传递给外部。因为放热板2的侧面2c被外装部件6覆盖,所以能够使放热板2和第一引线架3的接合更为牢固。
第一引线架3的端部和第二引线架5的端部从外装部件6的侧面突出,作为半导体装置的安装用端子与变频控制设备等的电路连接。
噪音屏蔽部件7埋设在外装部件6中,使得该噪音屏蔽部件7的下端与第一引线架3的第一芯片垫部9接触,并且噪音屏蔽部件7的上端从外装部件6的第一面6a(以下记载为“上表面”)露出。噪音屏蔽部件7形成为上端部在水平方向上的剖面面积比下端部在水平方向上的剖面面积大的形状。例如,噪音屏蔽部件7呈其直径从下端朝向上端逐渐变大的圆锥台(truncated cone)状。用在树脂中混合有氧化铬或氧化镍等具有磁性的金属氧化物粒子或者铁氧体粉末等磁性体粉末的树脂成形体作为噪音屏蔽部件7即可。
在噪音屏蔽部件7由具有导电性的材料如在环氧树脂等中混合有镍(Ni)等导电金属或碳粉等的树脂成形体等制成的情况下,该噪音屏蔽部件7经与第一芯片垫部9电连接的功率元件1的接地(GND)端子与变频控制设备的接地电连接。
在图3中,噪音屏蔽部件7形成为将功率元件1和控制元件4之间隔断的栅状。在图3中,噪音屏蔽部件7形成为:在从功率元件1的一面1a(以下记载为“上表面”)一侧看时,噪音屏蔽部件7横穿功率元件1和控制元件4之间排成一列。但是,也可以视第一芯片垫部9的尺寸将噪音屏蔽部件7设置为:该噪音屏蔽部件7将安装有控制元件4的第二芯片垫部11的除了固定有引线的一侧以外的三侧包围起来,如图5和图6所示。在设置将第二芯片垫部11的三侧包围起来的多个噪音屏蔽部件7的情况下,噪音屏蔽部件7也设置为:在从功率元件1的上表面1a一侧看时,噪音屏蔽部件7呈将至少功率元件1和控制元件4之间隔断的栅状。在功率元件1和控制元件4之间也可以形成有多列噪音屏蔽部件7。
在第一实施方式中,设置有多个从外装部件6的上表面6a形成到第一芯片垫部9的上表面9a的噪音屏蔽部件7,在从功率元件1的上表面1a一侧看时,多个噪音屏蔽部件7彼此留有间隔地设置成将功率元件1和控制元件4之间隔断的栅状。因此,功率元件1所产生的电磁波噪音的一部分会被噪音屏蔽部件7吸收。在噪音屏蔽部件7具有导电性的情况下,电磁波噪音经噪音屏蔽部件7流向第一芯片垫部9一侧。其结果是,能够使到达控制元件4的电磁波噪音量减少,防止控制元件4产生误工作,来提高可靠性。
若要让到达控制元件4的电磁波噪音量减少,则优选成为栅栏的纵向格线的噪音屏蔽部件7在垂直方向上的剖面面积较大。因为第一芯片垫部9和噪音屏蔽部件7相连接的部分(下端)的面积会受到安装在第一芯片垫部9上的功率元件1尺寸的制约,所以当噪音屏蔽部件7呈圆柱状时,难以让噪音屏蔽部件7在垂直方向上的剖面面积较大。然而,在本实施方式中,使噪音屏蔽部件7呈其直径从第一芯片垫部9朝向外装部件6的上表面6a逐渐变大的圆锥台状。因此,与设置呈圆柱状的噪音屏蔽部件7的情况相比能够增大噪音屏蔽部件7在铅直方向上的剖面面积。由此,能够使由功率元件1产生且会到达控制元件4的电磁波噪音量减少,因而能够更为有效地防止控制元件4产生误工作。
而且,因为噪音屏蔽部件7的热导率比外装部件6高,所以从噪音屏蔽部件7的外装部件6上表面6a一侧也能够将功率元件1所产生的热放出。由此,还能够减小功率元件1所产生的热对控制元件4造成的影响。
以下,用图7~图11对本实施方式中的半导体装置的制造方法加以说明。首先,如图7所示,使暂时粘着有绝缘薄片10的放热板2的与绝缘薄片10相反一侧的面朝向下侧,在该状态下将该放热板2放置在下模12的模腔内。接着,将第一引线架3和第二引线架5放置在下模12内的规定位置上,来使第一引线架3的第一芯片垫部9的下表面9b与绝缘薄片10接触。
接着,如图8所示,使上模13下降,用上模13和下模12将第一引线架3和第二引线架5夹住。上模13具有多条模具插针14,各条模具插针14形成为位于第一引线架3的第一芯片垫部9上。在用上模13和下模12将第一引线架3和第二引线架5夹住后,模具插针14将第一引线架3的第一芯片垫部9朝下推压。这么一来,贴在第一引线架3的第一芯片垫部9下表面9b上的放热板2就被压在下模12上。
多条模具插针14中的至少一条模具插针14设置为:在从功率元件1的上表面1a一侧看时,该模具插针14位于功率元件1和控制元件4之间。多条模具插针14中设置在至少功率元件1和控制元件4之间的模具插针14呈其直径从与第一引线架3的第一芯片垫部9接触的面朝上逐渐变大的圆锥台状。应予说明,模具插针14的形状也可以是棱锥台(truncatedpyramid)状。
接着,如图9所示,按照传递模塑法将环氧树脂等密封树脂注入上模13和下模12之间,来形成覆盖功率元件1、控制元件4以及放热板2的侧面的外装部件6。因为放热板2被模具插针14被压在下模12上,所以密封树脂不会漏到放热板2的下表面2b一侧。因此,密封后的放热板2的下表面2b一侧未被密封树脂覆盖,能够有效地向放热板2的下表面2b一侧放热。
因为第一芯片垫部9的上表面9a被模具插针14按压,所以模具插针14的顶端部分成为稍微突入第一芯片垫部9的上表面9a中的状态。因此,密封树脂不会流入模具插针14和第一芯片垫部9的接触面。
在密封工序中,设置在第一引线架3的第一芯片垫部9和放热板2之间的绝缘薄片10的粘接层(未图示)由于从下模12和上模13传来的热而熔融、固化。因此,能够使绝缘薄片10与第一引线架3的第一芯片垫部9的下表面9b及放热板2牢固地粘接起来。
接着,如图10所示使上模13上升,这么一来,开口部15就形成在外装部件6的刚才模具插针14所在的位置上。开口部15呈其直径从第一引线架3的第一芯片垫部9朝上逐渐变大的圆锥台状。在开口部15的底面上不会附着有密封树脂,第一引线架3的第一芯片垫部9在该底面上露出。
接着,如图11所示,将密封体16从下模12内取出。此后,按照例如丝网印刷等印刷法或滴涂(dispensing)法将含有镍(Ni)等具有磁性的金属粒子、环氧树脂和溶剂等的磁性体浆从开口部15的上方注入开口部15内。之后,使磁性体浆固化,这么一来,噪音屏蔽部件7就形成在开口部15内。因为开口部15的底面已在密封工序中被模具插针14按压,所以在第一芯片垫部9的上表面9a上形成有凹部。因此,噪音屏蔽部件7的顶端部成为稍微突入第一芯片垫部9的上表面9a中的状态,其结果是噪音屏蔽部件7的下表面和第一芯片垫部9的上表面9a的机械接合状态会得以加强。
当噪音屏蔽部件7具有导电性时,电连接状态也会得以加强,功率元件1所产生的电磁波噪音经噪音屏蔽部件7流向第一芯片垫部9,减少电磁波噪音的效果会提高。
应予说明,当磁性体浆的粘度较高时,为防止空隙形成在开口部15内,可以在涂敷后进行真空脱泡,再进行热固化,也可以在真空炉中进行热固化。这么一来,能够形成质量均匀的噪音屏蔽部件7。
上面作为第一实施方式说明了使用不是一体的两个引线架的例子,但本发明并不限于此。也可以使用例如第一引线架3和第二引线架5为一体的引线架。这么一来,能够实现提高了生产性和定位精度的半导体装置。
如上所述,在第一实施方式中,在至少功率元件1和控制元件4之间设置从外装部件6的上表面6a延伸到第一引线架3的第一芯片垫部9的上表面9a的噪音屏蔽部件7。这么一来,功率元件1所产生的电磁波噪音的一部分会被噪音屏蔽部件7吸收。当噪音屏蔽部件7具有导电性时,电磁波噪音会经噪音屏蔽部件7流向第一芯片垫部9一侧。其结果是,能够使到达控制元件4的电磁波噪音量减少,防止控制元件4产生误工作,来提高可靠性。
(第二实施方式)
图12显示第二实施方式所涉及的半导体装置的剖面结构。如图12所示,在第二实施方式中的半导体装置中,除了第一实施方式中的半导体装置的结构以外还设置有电磁波吸收板17,该电磁波吸收板17设置在外装部件6的与放热板2相反一侧的面(上表面6a)上。应予说明,电磁波吸收板17是由例如已用镍(Ni)等磁性材料进行镀层处理的铜(Cu)或42Alloy(合金)等镍-铁合金制成的导电性金属板、或者由铁氧体等磁性材料制成的磁性体板即可。
以下,对本实施方式中的半导体装置的制造方法加以说明。按照与第一实施方式相同的方法形成具有噪音屏蔽部件7的半导体装置,然后在外装部件6的上表面6a上涂敷环氧树脂等粘接剂18,将电磁波吸收板17放置在其上。在该状态下使粘接剂18热固化,由此形成具有电磁波吸收板17的半导体装置。应予说明,也可以将绝缘薄片贴在外装部件6的上表面6a上来代替粘接剂18,再将电磁波吸收板17放置在其上,然后进行热固化处理。
噪音屏蔽部件7,通过对含有镍等具有磁性的金属粒子、环氧树脂和溶剂等的磁性体浆进行热固化处理而形成。因此,噪音屏蔽部件7的上表面由于磁性体浆的固化收缩而成为从外装部件6的上表面6a凹陷的状态。因此,如图12所示,在外装部件6的上表面6a上不会发生电磁波吸收板17被噪音屏蔽部件7的上表面顶起来的现象。其结果是,能够维持外装部件6的上表面6a和电磁波吸收板17的平面状态,不使粘接强度下降即能够可靠地进行形成。
根据第二实施方式,通过利用新设置的电磁波吸收板17,不仅能够切断从功率元件1放射的电磁波噪音,也能够切断从半导体装置的上部射入的、来自外部的电磁波噪音。由此,能够实现进一步提高了工作可靠性的半导体装置。
(第三实施方式)
图13显示第三实施方式所涉及的半导体装置内部的平面结构,图14显示该半导体装置内部的剖面结构。如图13和图14所示,第三实施方式中的半导体装置具有基本上与第一实施方式中的半导体装置相同的结构,但噪音屏蔽部件7形成在接地用岛19上这一点与第一实施方式不同。接地用岛19与第一引线架3的第一芯片垫部9电隔离,形成为例如矩形。接地用岛19隔着绝缘薄片10设置在放热板2的上表面上。
因为垂直导电结构功率MOSFET用芯片背面作漏电极,所以大电流会从功率元件1经第一芯片垫部9流向半导体装置的漏极端子。因此,在将具有导电性的噪音屏蔽部件7组装在半导体装置内的情况下,不能够使噪音屏蔽部件7直接与第一芯片垫部9接合。但是,通过采用本实施方式的结构,则能够用垂直导电结构功率MOSFET作功率元件1。
在从功率元件1的上表面1a一侧看时位于至少功率元件1和控制元件4之间的位置上,设置从外装部件6的上表面沿垂直于接地用岛19的方向延伸的噪音屏蔽部件7。能够使噪音屏蔽部件7的下端与接地用岛19机械连接且电连接。
根据本实施方式中的半导体装置,能够使用芯片背面是漏电极的功率元件。由此,能够实现通用性较高的半导体装置。
根据本实施方式中的半导体装置,从功率元件1放射的电磁波噪音的一部分经噪音屏蔽部件7流向接地用岛19一侧。其结果是,能够使到达控制元件4的电磁波噪音量减少,防止控制元件4产生误工作,来提高可靠性。
应予说明,在本实施方式中也可以在外装部件6的上表面6a上设置电磁波吸收板17。
(第四实施方式)
图15显示第四实施方式所涉及的半导体装置的剖面结构。如图15所示,第四实施方式中的半导体装置具有基本上与第一实施方式中的半导体装置相同的结构,但半导体装置具有电路板31这一点与第一实施方式不同。电路板31安装在第一引线架3所包括的第一芯片垫部9的上表面9a上。在形成在电路板31的一面31a(以下记载为“上表面”)上的电路图案32上安装有一个以上的功率元件1。从外装部件6的上表面6a向电路图案32设置有沿垂直于功率元件1的上表面1a的方向延伸的噪音屏蔽部件7。
通过构成为上述结构,则能够使功率元件1和控制元件4经电路图案32电连接。当功率元件1由例如IGBT和二极管等多个元件构成时,能够使多个元件经电路图案32电连接。其结果是,能够实现设计自由度较高且通用性较优良的半导体装置。
在与功率元件1的上表面1a平行的方向上至少功率元件1和控制元件4之间的位置上,设置从外装部件6的上表面6a沿垂直于电路板31的电路图案32上表面的方向延伸的噪音屏蔽部件7。这么一来,能够使噪音屏蔽部件7的下端经电路图案32的接地部或形成在电路板31上的通孔(未图示)与第一引线架3电连接。
根据第四实施方式,因为半导体装置具有电路板31,所以能够很容易地使功率元件1和控制元件4连接。而且,即使是由多个元件等构成的功率元件也能够安装在该半导体装置中。因此,能够很容易地实现设计自由度较高且通用性较优良的半导体装置。
根据本实施方式中的半导体装置,在噪音屏蔽部件7具有导电性的情况下,功率元件1所产生的电磁波噪音的一部分也会经噪音屏蔽部件7流向电路板31的接地部一侧或第一引线架3的第一芯片垫部9一侧。其结果是,能够使到达控制元件4的电磁波噪音量减少,防止控制元件4产生误工作,来提高可靠性。
应予说明,在本实施方式中也可以在外装部件6的上表面6a上设置电磁波吸收板17,如图16所示。
在各个实施方式中示出的是在第一引线架上安装有功率元件且在第二引线架上安装有控制元件的例子。但是,本发明并不限于功率元件和控制元件的组合。只要是将多个半导体元件封入一个外装部件中的半导体装置,就能够得到相同的效果。上面示出的是形成有多个噪音屏蔽部件7的例子,但是噪音屏蔽部件7的数量也可以是一个。
-产业实用性-
本发明能够提高工作可靠性,本发明所涉及的半导体装置特别是作为绝缘栅双极型半导体模块、智能功率模块等的半导体装置很有用。
Claims (18)
1.一种半导体装置,其特征在于:
所述半导体装置包括:
第一半导体元件,
第二半导体元件,
第一引线架,其具有第一芯片垫部,并在所述第一芯片垫部上安装有所述第一半导体元件,
第二引线架,其具有第二芯片垫部,并在所述第二芯片垫部上安装有所述第二半导体元件,
放热板,其固定在所述第一芯片垫部的与所述第一半导体元件相反一侧的面上,
外装部件,其覆盖所述第一半导体元件和所述第二半导体元件而形成,以及
噪音屏蔽部件,其第一端部在所述外装部件的第一面上露出,第二端部与所述第一引线架的安装有所述第一半导体元件的面接触。
2.根据权利要求1所述的半导体装置,其特征在于:
所述噪音屏蔽部件的个数为多个,多个所述噪音屏蔽部件形成为将所述第一半导体元件和所述第二半导体元件之间隔断的栅状。
3.根据权利要求1所述的半导体装置,其特征在于:
所述噪音屏蔽部件与所述第一芯片垫部接触。
4.根据权利要求3所述的半导体装置,其特征在于:
所述第一芯片垫部具有凹部,
所述噪音屏蔽部件的所述第二端部插入所述凹部内。
5.根据权利要求1所述的半导体装置,其特征在于:
所述第一引线架具有接地用岛,
所述噪音屏蔽部件与所述接地用岛电连接。
6.根据权利要求5所述的半导体装置,其特征在于:
所述接地用岛具有凹部,
所述噪音屏蔽部件的所述第二端部插入所述凹部内。
7.根据权利要求1所述的半导体装置,其特征在于:
所述半导体装置还具有固定在所述第一芯片垫部上的电路板,
所述第一半导体元件安装在所述电路板上。
8.根据权利要求1所述的半导体装置,其特征在于:
所述放热板的和与所述第一芯片垫部固定在一起的面相反一侧的面从所述外装部件的与所述第一面相反一侧的第二面露出。
9.根据权利要求1所述的半导体装置,其特征在于:
所述噪音屏蔽部件含有磁性材料。
10.根据权利要求1所述的半导体装置,其特征在于:
在所述噪音屏蔽部件中,所述第一端部一侧在与所述第一面平行的方向上的剖面面积比所述第二端部一侧在与所述第一面平行的方向上的剖面面积大。
11.根据权利要求1所述的半导体装置,其特征在于:
所述噪音屏蔽部件的个数为多个,多个所述噪音屏蔽部件包围所述第二芯片垫部而设。
12.根据权利要求1所述的半导体装置,其特征在于:
所述半导体装置还包括设置在所述外装部件的第一面上的电磁波吸收板。
13.根据权利要求1所述的半导体装置,其特征在于:
所述第一半导体元件为功率半导体元件,
所述第二半导体元件为控制元件。
14.一种半导体装置的制造方法,其特征在于:
所述半导体装置的制造方法包括:
工序a,将在第一芯片垫部上安装有第一半导体元件的第一引线架和在第二芯片垫部上安装有第二半导体元件的第二引线架放置在下模的规定位置上,
工序b,在所述工序a之后放置具有模具插针的上模,来使所述模具插针与所述第一引线架的安装有所述第一半导体元件的面接触,
工序c,将树脂注入所述上模和所述下模之间,形成覆盖所述第一半导体元件和所述第二半导体元件且具有对应于所述模具插针的开口部的外装部件,以及
工序d,在所述开口部内形成噪音屏蔽部件;
在所述第一芯片垫部的与所述第一半导体元件相反一侧的面上夹着绝缘薄片固定有放热板,
所述噪音屏蔽部件形成在所述第一半导体元件和所述第二半导体元件之间。
15.根据权利要求14所述的半导体装置的制造方法,其特征在于:
所述噪音屏蔽部件的个数为多个,多个所述噪音屏蔽部件形成为将所述第一半导体元件和所述第二半导体元件之间隔断的栅状。
16.根据权利要求14所述的半导体装置的制造方法,其特征在于:
所述半导体装置的制造方法还包括工序e,在该工序e中,在所述工序d之后将电磁波吸收板固定在所述外装部件的形成有所述噪音屏蔽部件的面上。
17.根据权利要求14所述的半导体装置的制造方法,其特征在于:
在将所述第一半导体元件安装在电路板上后,将所述电路板固定在所述第一芯片垫部上。
18.根据权利要求14所述的半导体装置的制造方法,其特征在于:
所述第一半导体元件为功率半导体元件,
所述第二半导体元件为控制元件。
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