CN1082249C - 存储器及其制造方法 - Google Patents

存储器及其制造方法 Download PDF

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Publication number
CN1082249C
CN1082249C CN96102504A CN96102504A CN1082249C CN 1082249 C CN1082249 C CN 1082249C CN 96102504 A CN96102504 A CN 96102504A CN 96102504 A CN96102504 A CN 96102504A CN 1082249 C CN1082249 C CN 1082249C
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CN
China
Prior art keywords
mentioned
electrode
variable resistance
aluminum
insulating film
Prior art date
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Expired - Fee Related
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CN96102504A
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English (en)
Chinese (zh)
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CN1136222A (zh
Inventor
平尾秀司
冈田英子
矢野航作
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Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
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Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN1136222A publication Critical patent/CN1136222A/zh
Application granted granted Critical
Publication of CN1082249C publication Critical patent/CN1082249C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • H10W20/01—
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/828—Current flow limiting means within the switching material region, e.g. constrictions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0073—Write using bi-directional cell biasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/33—Material including silicon
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
CN96102504A 1995-02-20 1996-02-16 存储器及其制造方法 Expired - Fee Related CN1082249C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3124895 1995-02-20
JP031248/95 1995-02-20

Publications (2)

Publication Number Publication Date
CN1136222A CN1136222A (zh) 1996-11-20
CN1082249C true CN1082249C (zh) 2002-04-03

Family

ID=12326077

Family Applications (1)

Application Number Title Priority Date Filing Date
CN96102504A Expired - Fee Related CN1082249C (zh) 1995-02-20 1996-02-16 存储器及其制造方法

Country Status (5)

Country Link
US (2) US5621247A (cg-RX-API-DMAC10.html)
JP (1) JPH08293585A (cg-RX-API-DMAC10.html)
KR (1) KR100186919B1 (cg-RX-API-DMAC10.html)
CN (1) CN1082249C (cg-RX-API-DMAC10.html)
TW (1) TW287313B (cg-RX-API-DMAC10.html)

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JPH08293523A (ja) * 1995-02-21 1996-11-05 Seiko Epson Corp 半導体装置およびその製造方法
TW307048B (en) * 1996-11-22 1997-06-01 United Microelectronics Corp High density read only memory structure and manufacturing method thereof
US6268661B1 (en) * 1999-08-31 2001-07-31 Nec Corporation Semiconductor device and method of its fabrication
JPH10242422A (ja) 1997-02-28 1998-09-11 Toshiba Corp 半導体記憶装置およびその製造方法
DE19815874C2 (de) * 1998-04-08 2002-06-13 Infineon Technologies Ag ROM-Halbleiter-Speichervorrichtung mit Implantationsbereichen zur Einstellung eines Kontaktwiderstandes und Verfahren zu deren Herstellung
JP2000216264A (ja) * 1999-01-22 2000-08-04 Mitsubishi Electric Corp Ｃｍｏｓ論理回路素子、半導体装置とその製造方法およびその製造方法において用いる半導体回路設計方法
KR100358569B1 (ko) * 1999-12-28 2002-10-25 주식회사 하이닉스반도체 반도체소자의 금속배선 형성방법
AUPQ504300A0 (en) 2000-01-11 2000-02-03 Biorex Health Limited Extraction of flavonoids
JP2001257325A (ja) * 2000-03-08 2001-09-21 Nec Corp 半導体記憶装置及びその製造方法
JP3837993B2 (ja) * 2000-03-21 2006-10-25 日本電気株式会社 電子素子およびそれを用いた記録方法
DE10020128A1 (de) * 2000-04-14 2001-10-18 Infineon Technologies Ag MRAM-Speicher
US6531371B2 (en) * 2001-06-28 2003-03-11 Sharp Laboratories Of America, Inc. Electrically programmable resistance cross point memory
US6693821B2 (en) * 2001-06-28 2004-02-17 Sharp Laboratories Of America, Inc. Low cross-talk electrically programmable resistance cross point memory
AUPR602201A0 (en) * 2001-06-29 2001-07-26 Biorex Health Limited Flavonoid concentrates
JP4249992B2 (ja) * 2002-12-04 2009-04-08 シャープ株式会社 半導体記憶装置及びメモリセルの書き込み並びに消去方法
JP2004260101A (ja) * 2003-02-27 2004-09-16 Rohm Co Ltd 半導体装置の製造方法
JP4830275B2 (ja) * 2004-07-22 2011-12-07 ソニー株式会社 記憶素子
US7327448B2 (en) * 2004-07-29 2008-02-05 Optech Ventures Llc Laser-ultrasonic detection of flip chip attachment defects
KR101258672B1 (ko) * 2004-10-22 2013-04-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
US9734901B2 (en) * 2004-10-29 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Display device with semiconductor memory cell
KR20060081470A (ko) * 2005-01-07 2006-07-13 삼성전자주식회사 박막트랜지스터 기판과 그 제조방법
US20090039335A1 (en) * 2006-02-09 2009-02-12 Motoyasu Terao Semiconductor device and manufacturing method of the same
EP1850378A3 (en) * 2006-04-28 2013-08-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and semicondutor device
JP4344372B2 (ja) * 2006-08-22 2009-10-14 シャープ株式会社 半導体記憶装置及びその駆動方法
US8232175B2 (en) 2006-09-14 2012-07-31 Spansion Llc Damascene metal-insulator-metal (MIM) device with improved scaleability
CN101542727B (zh) * 2006-10-16 2011-02-09 松下电器产业株式会社 非易失性存储元件阵列及其制造方法
KR100911473B1 (ko) * 2007-06-18 2009-08-11 삼성전자주식회사 상변화 메모리 유닛, 이의 제조 방법, 이를 포함하는상변화 메모리 장치 및 그 제조 방법
WO2010082928A1 (en) * 2009-01-15 2010-07-22 Hewlett-Packard Development Company, L.P. Silicon-based memristive device
JP2010245102A (ja) * 2009-04-01 2010-10-28 Sharp Corp 半導体装置及びその製造方法
US8716688B2 (en) * 2010-02-25 2014-05-06 The University Of Kentucky Research Foundation Electronic device incorporating memristor made from metallic nanowire
KR101145331B1 (ko) * 2010-07-15 2012-05-14 에스케이하이닉스 주식회사 저항 메모리 장치
US9312306B2 (en) * 2013-09-03 2016-04-12 Kabushiki Kaisha Toshiba Nonvolatile memory device and method of manufacturing the same
CN108899391A (zh) * 2018-06-15 2018-11-27 西安微电子技术研究所 光电耦合器用红外线接收管遮蔽层的制作方法
CN113644193B (zh) * 2021-06-29 2024-09-24 北京大学 阻变存储器件的制备方法、装置、电子设备和存储介质

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Also Published As

Publication number Publication date
CN1136222A (zh) 1996-11-20
TW287313B (cg-RX-API-DMAC10.html) 1996-10-01
JPH08293585A (ja) 1996-11-05
US5714400A (en) 1998-02-03
KR960032685A (ko) 1996-09-17
US5621247A (en) 1997-04-15
KR100186919B1 (ko) 1999-04-15

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