CN108140552A - 基于石墨烯的层转移的系统和方法 - Google Patents

基于石墨烯的层转移的系统和方法 Download PDF

Info

Publication number
CN108140552A
CN108140552A CN201680059078.8A CN201680059078A CN108140552A CN 108140552 A CN108140552 A CN 108140552A CN 201680059078 A CN201680059078 A CN 201680059078A CN 108140552 A CN108140552 A CN 108140552A
Authority
CN
China
Prior art keywords
layer
graphene
substrate
graphene layer
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201680059078.8A
Other languages
English (en)
Chinese (zh)
Inventor
J·金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Massachusetts Institute of Technology
Original Assignee
Massachusetts Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Institute of Technology filed Critical Massachusetts Institute of Technology
Priority to CN202411323087.6A priority Critical patent/CN119349566A/zh
Publication of CN108140552A publication Critical patent/CN108140552A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3206—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H10P14/272—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition using mask materials other than SiO2 or SiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/276—Lateral overgrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3246—Monolayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201680059078.8A 2015-09-08 2016-09-08 基于石墨烯的层转移的系统和方法 Pending CN108140552A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202411323087.6A CN119349566A (zh) 2015-09-08 2016-09-08 基于石墨烯的层转移的系统和方法

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201562215223P 2015-09-08 2015-09-08
US62/215,223 2015-09-08
US201662335784P 2016-05-13 2016-05-13
US62/335,784 2016-05-13
US201662361717P 2016-07-13 2016-07-13
US62/361,717 2016-07-13
PCT/US2016/050701 WO2017044577A1 (en) 2015-09-08 2016-09-08 Systems and methods for graphene based layer transfer

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202411323087.6A Division CN119349566A (zh) 2015-09-08 2016-09-08 基于石墨烯的层转移的系统和方法

Publications (1)

Publication Number Publication Date
CN108140552A true CN108140552A (zh) 2018-06-08

Family

ID=58240052

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201680059078.8A Pending CN108140552A (zh) 2015-09-08 2016-09-08 基于石墨烯的层转移的系统和方法
CN202411323087.6A Pending CN119349566A (zh) 2015-09-08 2016-09-08 基于石墨烯的层转移的系统和方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202411323087.6A Pending CN119349566A (zh) 2015-09-08 2016-09-08 基于石墨烯的层转移的系统和方法

Country Status (6)

Country Link
US (1) US10770289B2 (https=)
EP (2) EP4105966A3 (https=)
JP (1) JP6938468B2 (https=)
KR (2) KR102809444B1 (https=)
CN (2) CN108140552A (https=)
WO (1) WO2017044577A1 (https=)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109166790A (zh) * 2018-07-28 2019-01-08 西安交通大学 一种利用金属应力层剥离石墨烯上钙钛矿氧化物压电薄膜的方法
CN110164811A (zh) * 2019-05-23 2019-08-23 芜湖启迪半导体有限公司 一种碳化硅衬底循环使用的方法和GaN HEMT器件的制作方法
WO2020019566A1 (zh) * 2018-07-25 2020-01-30 深圳市华星光电半导体显示技术有限公司 柔性显示装置及其制备方法
CN112740359A (zh) * 2018-10-02 2021-04-30 株式会社菲尔尼克斯 半导体元件的制造方法及半导体基板
CN112839813A (zh) * 2018-10-16 2021-05-25 麻省理工学院 在升华的sic基底上使用碳缓冲的外延生长模板
CN114245932A (zh) * 2019-08-01 2022-03-25 罗姆股份有限公司 半导体基板和半导体装置及它们的制造方法
CN114730704A (zh) * 2019-09-23 2022-07-08 科莱约纳诺公司 物质组合物
TWI815603B (zh) * 2021-08-12 2023-09-11 王曉靁 ＲＧＢ ＩｎＧａＮ基ｍｉｃｒｏ ＬＥＤ的製作方法及其製作的組件
CN119542128A (zh) * 2024-11-14 2025-02-28 哈尔滨工业大学(深圳)(哈尔滨工业大学深圳科技创新研究院) 一种磷化铟单晶薄膜的高质量定向远程外延方法和剥离转移方法

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10903073B2 (en) 2016-11-08 2021-01-26 Massachusetts Institute Of Technology Systems and methods of dislocation filtering for layer transfer
JP2020515052A (ja) 2017-02-24 2020-05-21 マサチューセッツ インスティテュート オブ テクノロジー 湾曲焦点面アレイのための装置および方法
EP3586368A4 (en) 2017-02-24 2020-12-09 Massachusetts Institute of Technology (MIT) METHODS AND APPARATUS FOR VERTICALLY STACKED MULTICOLORED LIGHT DIODE (LED) DISPLAY
WO2018195152A1 (en) * 2017-04-18 2018-10-25 Massachusetts Institute Of Technology Systems and methods for fabricating semiconductor devices via remote epitaxy
US20200135962A1 (en) * 2017-04-21 2020-04-30 Massachusetts Institute Of Technology Systems and methods for fabricating photovoltaic devices via remote epitaxy
WO2019099461A1 (en) * 2017-11-14 2019-05-23 Massachusetts Institute Of Technology Epitaxial growth and transfer via patterned two-dimensional (2d) layers
CN108517555B (zh) * 2017-12-29 2020-08-04 西安电子科技大学 基于范德华外延获得大面积高质量柔性自支撑单晶氧化物薄膜的方法
CN108767659A (zh) * 2018-06-04 2018-11-06 清华大学 一种利用二维材料隔层外延生长激光器的方法
JP2021527618A (ja) 2018-06-22 2021-10-14 マサチューセッツ インスティテュート オブ テクノロジー グラフェンおよび／または六方晶窒化ホウ素を備えている層の上での炭化ケイ素の成長のためのシステムおよび方法ならびに関連物品
WO2020041650A1 (en) 2018-08-23 2020-02-27 Massachusetts Institute Of Technology Atomic precision control of wafer-scale two-dimensional materials
WO2020072871A1 (en) * 2018-10-05 2020-04-09 Massachusetts Institute Of Technology Methods, apparatus, and systems for manufacturing gan templates via remote epitaxy
WO2020072867A1 (en) * 2018-10-05 2020-04-09 Massachusetts Institute Of Technology Methods, apparatus, and systems for remote epitaxy using stitched graphene
KR102232618B1 (ko) * 2019-02-14 2021-03-29 전북대학교산학협력단 육방정계 질화붕소 박막의 제조방법 및 그로부터 제조된 박막을 구비하는 광전소자
CN110010729A (zh) * 2019-03-28 2019-07-12 王晓靁 RGB全彩InGaN基LED及其制备方法
US11289582B2 (en) * 2019-05-23 2022-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Single-crystal hexagonal boron nitride layer and method forming same
GB201910170D0 (en) 2019-07-16 2019-08-28 Crayonano As Nanowire device
CN110491826B (zh) * 2019-07-31 2020-09-29 北京工业大学 化合物半导体单晶薄膜层的转移方法及单晶GaAs-OI复合晶圆的制备方法
US20220328311A1 (en) * 2019-09-04 2022-10-13 Massachusetts Institute Of Technology Multi-regional epitaxial growth and related systems and articles
CN111009602B (zh) * 2020-01-03 2023-03-28 王晓靁 具有2d材料中介层的外延基板及制备方法和制作组件
JP7490960B2 (ja) * 2020-01-15 2024-05-28 日本電気株式会社 製造方法
WO2021158731A1 (en) * 2020-02-04 2021-08-12 Massachusetts Institute Of Technology Fabrication of single-crystalline ionically conductive materials and related articles and systems
JP6771706B1 (ja) * 2020-03-23 2020-10-21 三菱電機株式会社 窒化物半導体装置およびその製造方法
CN115298028A (zh) * 2020-04-20 2022-11-04 Ev 集团 E·索尔纳有限责任公司 载体基底、用于制造载体基底的方法以及用于将转移层从载体基底转移到产品基底上的方法
JP7519072B2 (ja) * 2020-05-01 2024-07-19 学校法人 名城大学 半導体の製造方法
CN111682061B (zh) * 2020-05-18 2021-12-31 华为技术有限公司 氮化物外延片及其制备方法和半导体器件
CN112038220B (zh) * 2020-08-31 2023-02-03 上海华力集成电路制造有限公司 晶圆键合工艺中改善晶圆边缘形变的方法
CN116547416A (zh) * 2020-12-10 2023-08-04 罗姆股份有限公司 半导体基板及其制造方法
WO2022158078A1 (ja) * 2021-01-25 2022-07-28 ローム株式会社 半導体基板及びその製造方法
CN112802559B (zh) * 2021-01-29 2022-03-29 华南理工大学 一种基于热力学循环原理的快速调试水溶液中石墨烯-离子平均力势场的方法
KR102607828B1 (ko) * 2021-05-28 2023-11-29 아주대학교산학협력단 모놀리식 3차원 집적 회로 및 이의 제조 방법
KR102590568B1 (ko) * 2021-07-06 2023-10-18 한국과학기술연구원 이종 접합 반도체 기판, 그의 제조방법 및 그를 이용한 전자소자
KR102702223B1 (ko) * 2021-10-27 2024-09-04 서울대학교산학협력단 표면이 기능화된 그래핀층을 이용한 박막의 제조방법 및 이를 이용하여 제조된 박막
US20240047203A1 (en) * 2022-08-04 2024-02-08 Future Semiconductor Business, Inc Monolithic remote epitaxy of compound semi conductors and 2d materials
KR20240027469A (ko) * 2022-08-23 2024-03-04 한국광기술원 초미세 수직형 led 디스플레이의 제조 방법
GB2624846A (en) * 2022-09-02 2024-06-05 Paragraf Ltd A method of forming a semiconductor or dielectric layer on a substrate
CN115881839B (zh) * 2022-11-22 2025-09-26 西安工程大学 柔性石墨烯/锗异质结的制备方法与转移方法
FR3143044A1 (fr) 2022-12-08 2024-06-14 Soitec Structure comprenant une couche d’arseniure de bore de haute conductivite thermique et procede de fabrication
FR3146242B1 (fr) 2023-02-27 2025-02-14 Soitec Silicon On Insulator Structure semi-conductrice pour former des diodes laser a cavite verticale
KR102925074B1 (ko) 2023-06-22 2026-02-06 광운대학교 산학협력단 전사지지층을 이용한 전사 가능한 3d 그래핀 제조 방법 및 이를 이용한 표면 증강 라만산란 센서 장치
FR3159701B1 (fr) * 2024-02-22 2026-03-06 Soitec Silicon On Insulator Méthode de fabrication d’une structure empilée du type silicium contraint sur isolant en utilisant une technique de transfert de couche à base de matériau 2d
KR102826939B1 (ko) * 2024-03-21 2025-06-27 세종대학교산학협력단 쇼트키 장벽 심자외선 포토다이오드 및 그 제조 방법
CN118726934B (zh) * 2024-06-19 2025-05-30 浙江大学 一种二维材料微图案阵列大面积印刷及转移方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011009281A (ja) * 2009-06-23 2011-01-13 Oki Data Corp 半導体ウエハの製造方法及び半導体ウエハ
US20110244662A1 (en) * 2010-03-31 2011-10-06 Samsung Electronics Co., Ltd. Method of manufacturing graphene by using germanium layer
CN102782856A (zh) * 2010-03-08 2012-11-14 国际商业机器公司 基于石墨烯的三维集成电路器件
US20130285016A1 (en) * 2012-04-25 2013-10-31 Yang Wei Epitaxial structure
US20140220764A1 (en) * 2013-02-05 2014-08-07 International Business Machines Corporation Thin film wafer transfer and structure for electronic devices
US20140339506A1 (en) * 2013-05-15 2014-11-20 International Business Machines Corporation Formation of large scale single crystalline graphene
WO2014190352A1 (en) * 2013-05-24 2014-11-27 The University Of North Carolina At Charlotte Growth of semiconductors on hetero-substrates using graphene as an interfacial layer
CN104393128A (zh) * 2014-11-19 2015-03-04 北京中科天顺信息技术有限公司 一种使用SiC衬底的氮化物LED外延结构及其制备方法
US20150084074A1 (en) * 2013-09-26 2015-03-26 International Business Machines Corporation Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4236947A (en) 1979-05-21 1980-12-02 General Electric Company Fabrication of grown-in p-n junctions using liquid phase epitaxial growth of silicon
EP0191503A3 (en) 1980-04-10 1986-09-10 Massachusetts Institute Of Technology Method of producing sheets of crystalline material
GB8912498D0 (en) 1989-05-31 1989-07-19 De Beers Ind Diamond Diamond growth
US5264071A (en) 1990-06-13 1993-11-23 General Electric Company Free standing diamond sheet and method and apparatus for making same
US5308661A (en) 1993-03-03 1994-05-03 The Regents Of The University Of California Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate
US5527559A (en) 1994-07-18 1996-06-18 Saint Gobain/Norton Industrial Ceramics Corp. Method of depositing a diamond film on a graphite substrate
US5641381A (en) 1995-03-27 1997-06-24 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Preferentially etched epitaxial liftoff of InP material
US5792254A (en) 1996-06-12 1998-08-11 Saint-Gobain/Norton Industrial Ceramics Corp. Production of diamond film
US6566256B1 (en) 1999-04-16 2003-05-20 Gbl Technologies, Inc. Dual process semiconductor heterostructures and methods
US7786421B2 (en) 2003-09-12 2010-08-31 California Institute Of Technology Solid-state curved focal plane arrays
WO2006015185A2 (en) 2004-07-30 2006-02-09 Aonex Technologies, Inc. GaInP/GaAs/Si TRIPLE JUNCTION SOLAR CELL ENABLED BY WAFER BONDING AND LAYER TRANSFER
US7619257B2 (en) 2006-02-16 2009-11-17 Alcatel-Lucent Usa Inc. Devices including graphene layers epitaxially grown on single crystal substrates
US7755079B2 (en) 2007-08-17 2010-07-13 Sandia Corporation Strained-layer superlattice focal plane array having a planar structure
ATE486981T1 (de) 2007-12-21 2010-11-15 Condias Gmbh Verfahren zur aufbringung einer diamantschicht auf ein graphitsubstrat
US8916890B2 (en) 2008-03-19 2014-12-23 Cree, Inc. Light emitting diodes with light filters
US8193078B2 (en) 2008-10-28 2012-06-05 Athenaeum, Llc Method of integrating epitaxial film onto assembly substrate
US8859399B2 (en) 2008-11-19 2014-10-14 Agency For Science, Technology And Research Method of at least partially releasing an epitaxial layer
US8629353B2 (en) 2009-03-05 2014-01-14 The Board Of Trustees Of The Leland Stanford Junior University Apparatus and method using patterned array with separated islands
JP5070247B2 (ja) * 2009-06-23 2012-11-07 株式会社沖データ 半導体装置の製造方法、及び半導体装置
US8507797B2 (en) 2009-08-07 2013-08-13 Guardian Industries Corp. Large area deposition and doping of graphene, and products including the same
US8629065B2 (en) 2009-11-06 2014-01-14 Ostendo Technologies, Inc. Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE)
US8933436B2 (en) 2010-10-13 2015-01-13 The Regents Of The University Of Michigan Ordered organic-organic multilayer growth
US20120141799A1 (en) * 2010-12-03 2012-06-07 Francis Kub Film on Graphene on a Substrate and Method and Devices Therefor
US9065010B2 (en) 2011-06-28 2015-06-23 Universal Display Corporation Non-planar inorganic optoelectronic device fabrication
US8367556B1 (en) 2011-12-01 2013-02-05 International Business Machines Corporation Use of an organic planarizing mask for cutting a plurality of gate lines
JP5829508B2 (ja) * 2011-12-16 2015-12-09 株式会社豊田自動織機 ＳｉＣ結晶の結晶成長方法およびＳｉＣ結晶基板
KR101360774B1 (ko) * 2012-02-03 2014-02-12 연세대학교 산학협력단 실리콘 카바이드 웨이퍼 제조 방법 및 그 실리콘 카바이드 웨이퍼
WO2013126927A2 (en) 2012-02-26 2013-08-29 Solexel, Inc. Systems and methods for laser splitting and device layer transfer
US8906772B2 (en) 2012-04-16 2014-12-09 Uchicago Argonne, Llc Graphene layer formation at low substrate temperature on a metal and carbon based substrate
CN103378239B (zh) 2012-04-25 2016-06-08 清华大学 外延结构体
CN103374751B (zh) * 2012-04-25 2016-06-15 清华大学 具有微构造的外延结构体的制备方法
US8936961B2 (en) 2012-05-26 2015-01-20 International Business Machines Corporation Removal of stressor layer from a spalled layer and method of making a bifacial solar cell using the same
US20140014171A1 (en) * 2012-06-15 2014-01-16 Purdue Research Foundation High optical transparent two-dimensional electronic conducting system and process for generating same
EP2679540A1 (en) 2012-06-29 2014-01-01 Graphenea, S.A. Method of manufacturing a graphene monolayer on insulating substrates
US9096050B2 (en) 2013-04-02 2015-08-04 International Business Machines Corporation Wafer scale epitaxial graphene transfer
US9455374B2 (en) 2013-05-16 2016-09-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Integrated multi-color light emitting device made with hybrid crystal structure
JP2014237570A (ja) * 2013-06-10 2014-12-18 日本電信電話株式会社 窒化物半導体基板の製造方法
US9284640B2 (en) 2013-11-01 2016-03-15 Advanced Graphene Products Sp. Z.O.O. Method of producing graphene from liquid metal
WO2015156874A2 (en) 2014-01-15 2015-10-15 The Regents Of The Univerity Of Michigan Integration of epitaxial lift-off solar cells with mini-parabolic concentrator arrays via printing method
WO2015156871A2 (en) 2014-01-15 2015-10-15 Forrest Stephen R Forrest Non-destructive wafer recycling for epitaxial lift-off thin-film device using a superlattice epitaxial layer
DE102015017428B4 (de) 2014-07-25 2025-10-09 Semiconductor Energy Laboratory Co.,Ltd. Licht emittierendes Element, Licht emittierende Vorrichtung, elektronisches Gerät und Beleuchtungsvorrichtung
WO2016058037A1 (en) 2014-10-15 2016-04-21 The University Of Melbourne Method of fabricating a diamond membrane
KR102374118B1 (ko) 2014-10-31 2022-03-14 삼성전자주식회사 그래핀층 및 그 형성방법과 그래핀층을 포함하는 소자 및 그 제조방법
US9530643B2 (en) 2015-03-12 2016-12-27 International Business Machines Corporation Selective epitaxy using epitaxy-prevention layers
US10494713B2 (en) 2015-04-16 2019-12-03 Ii-Vi Incorporated Method of forming an optically-finished thin diamond film, diamond substrate, or diamond window of high aspect ratio
DE102015111453B4 (de) * 2015-07-15 2022-03-10 Infineon Technologies Ag Ein Halbleiterbauelement und ein Verfahren zum Bilden eines Halbleiterbauelements
WO2017222796A2 (en) 2016-06-03 2017-12-28 Massachusetts Institute Of Technology Systems and methods for fabricating single-crystalline diamond membranes
US10903073B2 (en) 2016-11-08 2021-01-26 Massachusetts Institute Of Technology Systems and methods of dislocation filtering for layer transfer
EP3586368A4 (en) 2017-02-24 2020-12-09 Massachusetts Institute of Technology (MIT) METHODS AND APPARATUS FOR VERTICALLY STACKED MULTICOLORED LIGHT DIODE (LED) DISPLAY
JP2020515052A (ja) 2017-02-24 2020-05-21 マサチューセッツ インスティテュート オブ テクノロジー 湾曲焦点面アレイのための装置および方法
WO2018195152A1 (en) 2017-04-18 2018-10-25 Massachusetts Institute Of Technology Systems and methods for fabricating semiconductor devices via remote epitaxy
US20200135962A1 (en) 2017-04-21 2020-04-30 Massachusetts Institute Of Technology Systems and methods for fabricating photovoltaic devices via remote epitaxy
WO2019099461A1 (en) 2017-11-14 2019-05-23 Massachusetts Institute Of Technology Epitaxial growth and transfer via patterned two-dimensional (2d) layers

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011009281A (ja) * 2009-06-23 2011-01-13 Oki Data Corp 半導体ウエハの製造方法及び半導体ウエハ
CN102782856A (zh) * 2010-03-08 2012-11-14 国际商业机器公司 基于石墨烯的三维集成电路器件
US20110244662A1 (en) * 2010-03-31 2011-10-06 Samsung Electronics Co., Ltd. Method of manufacturing graphene by using germanium layer
US20130285016A1 (en) * 2012-04-25 2013-10-31 Yang Wei Epitaxial structure
US20140220764A1 (en) * 2013-02-05 2014-08-07 International Business Machines Corporation Thin film wafer transfer and structure for electronic devices
US20140339506A1 (en) * 2013-05-15 2014-11-20 International Business Machines Corporation Formation of large scale single crystalline graphene
US20150228728A1 (en) * 2013-05-15 2015-08-13 International Business Machines Corporation Formation of large scale single crystalline graphene
WO2014190352A1 (en) * 2013-05-24 2014-11-27 The University Of North Carolina At Charlotte Growth of semiconductors on hetero-substrates using graphene as an interfacial layer
US20150084074A1 (en) * 2013-09-26 2015-03-26 International Business Machines Corporation Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same
CN104393128A (zh) * 2014-11-19 2015-03-04 北京中科天顺信息技术有限公司 一种使用SiC衬底的氮化物LED外延结构及其制备方法

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020019566A1 (zh) * 2018-07-25 2020-01-30 深圳市华星光电半导体显示技术有限公司 柔性显示装置及其制备方法
CN109166790A (zh) * 2018-07-28 2019-01-08 西安交通大学 一种利用金属应力层剥离石墨烯上钙钛矿氧化物压电薄膜的方法
US11798805B2 (en) 2018-10-02 2023-10-24 Filnex Inc. Method for manufacturing semiconductor device and semiconductor substrate
CN112740359A (zh) * 2018-10-02 2021-04-30 株式会社菲尔尼克斯 半导体元件的制造方法及半导体基板
CN112740359B (zh) * 2018-10-02 2022-07-12 株式会社菲尔尼克斯 半导体元件的制造方法及半导体基板
CN112839813A (zh) * 2018-10-16 2021-05-25 麻省理工学院 在升华的sic基底上使用碳缓冲的外延生长模板
US12308227B2 (en) 2018-10-16 2025-05-20 Massachusetts Institute Of Technology Epitaxial growth using carbon buffer on substrate
CN110164811A (zh) * 2019-05-23 2019-08-23 芜湖启迪半导体有限公司 一种碳化硅衬底循环使用的方法和GaN HEMT器件的制作方法
CN114245932A (zh) * 2019-08-01 2022-03-25 罗姆股份有限公司 半导体基板和半导体装置及它们的制造方法
US12495592B2 (en) 2019-08-01 2025-12-09 Rohm Co., Ltd. Semiconductor substrate, semiconductor device, and manufacturing methods of the same
CN114730704A (zh) * 2019-09-23 2022-07-08 科莱约纳诺公司 物质组合物
TWI815603B (zh) * 2021-08-12 2023-09-11 王曉靁 ＲＧＢ ＩｎＧａＮ基ｍｉｃｒｏ ＬＥＤ的製作方法及其製作的組件
CN119542128A (zh) * 2024-11-14 2025-02-28 哈尔滨工业大学(深圳)(哈尔滨工业大学深圳科技创新研究院) 一种磷化铟单晶薄膜的高质量定向远程外延方法和剥离转移方法

Also Published As

Publication number Publication date
US20180197736A1 (en) 2018-07-12
EP4105966A2 (en) 2022-12-21
EP3347914A4 (en) 2019-09-25
WO2017044577A1 (en) 2017-03-16
KR20180051602A (ko) 2018-05-16
KR102809444B1 (ko) 2025-05-19
JP6938468B2 (ja) 2021-09-22
EP3347914A1 (en) 2018-07-18
JP2018535536A (ja) 2018-11-29
KR20250076667A (ko) 2025-05-29
EP4105966A3 (en) 2023-06-21
CN119349566A (zh) 2025-01-24
US10770289B2 (en) 2020-09-08

Similar Documents

Publication Publication Date Title
US10770289B2 (en) Systems and methods for graphene based layer transfer
Qiao et al. Graphene buffer layer on SiC as a release layer for high-quality freestanding semiconductor membranes
US10903073B2 (en) Systems and methods of dislocation filtering for layer transfer
US12469699B2 (en) Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride and related articles
US12308227B2 (en) Epitaxial growth using carbon buffer on substrate
CN101931035B (zh) 氮化物半导体层分离方法、半导体器件和晶片及制造方法
CN109585269B (zh) 一种利用二维晶体过渡层制备半导体单晶衬底的方法
JP2023525597A (ja) 窒化物エピタキシャルウェーハ、その製造方法、および半導体デバイス
US9064698B1 (en) Thin-film gallium nitride structures grown on graphene
Qu et al. Long-range orbital hybridization in remote epitaxy: The nucleation mechanism of GaN on different substrates via single-layer graphene
TW201603297A (zh) 利用超晶格磊晶層對磊晶剝離薄膜裝置行非破壞性晶圓回收
TW201225171A (en) Method of manufacturing a semiconductor device
Min et al. Toward large-scale Ga2O3 membranes via quasi-Van Der Waals epitaxy on epitaxial graphene layers
TWI721107B (zh) 化合物半導體基板、膠片膜及化合物半導體基板之製造方法
Song et al. Recent advances in mechanically transferable III‐nitride based on 2D buffer strategy
JP5091920B2 (ja) 半導体ウエハの製造方法
WO2020072867A1 (en) Methods, apparatus, and systems for remote epitaxy using stitched graphene
KR20240071347A (ko) 화합물 반도체 소자 및 그 제조 방법
CN104099662A (zh) 一种在石墨烯薄膜上剥离外延材料的方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination