CN108028169B - 发光装置及其流体制造 - Google Patents
发光装置及其流体制造 Download PDFInfo
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- CN108028169B CN108028169B CN201680034962.6A CN201680034962A CN108028169B CN 108028169 B CN108028169 B CN 108028169B CN 201680034962 A CN201680034962 A CN 201680034962A CN 108028169 B CN108028169 B CN 108028169B
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- emitting element
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Abstract
发光装置及其制造方法被提供。根据一个实施例,提供了一种发光装置,其包括具有凹槽(30)的基板(20)以及位于基板上的层间介电层(40)。该层间介电层(40)可具有第一孔洞(22)和第二孔洞(24),该第一孔洞(22)开设在基板的凹槽(30)上方。该发光装置还可包括第一微型LED(12)和第二微型LED(14),第一微型LED(12)的厚度大于第二微型LED(14)的厚度。该第一微型LED(12)和该第二微型LED(14)可以分别放置在该第一孔洞(22)和该第二孔洞(24)中。
Description
背景技术
发光装置(LED)被预期将被用于未来的高效发光应用中,例如显示器和灯。近来,微型LED已经被开发用于未来的高效发光应用中。与这种装置相关的一个挑战是微型器件的组装可能是昂贵和复杂的,使得难以在合理的制造成本下实现高的组装精度。
用于将小装置分布或对准到透明衬底(诸如玻璃或聚合物)上以产生发光装置的方法在本领域中是公知的。一种经济有效的方法是流体自组装,该方法中油墨或浆料的液体载体介质中填充有小型发光装置,并且让液体载体介质流过衬底。所述小型照明装置通过流体输送穿过基板,且在制造过程中,重力被用于机械地捕获小型照明装置于基板上的机械捕集位置。然而,在常规的流体自组装方法中,当大小不同的小型装置被困在捕获位置时,装置常常不对准或放置在不正确的位置。而且,即使当装置正确对准并设置在正确的位置时,发光装置的所得表面也可能不是平面的,需要组装后的抛光步骤,这损害了制造工艺的经济效益,并且在一些情况会不合需要地改变小型照明装置的精确位置。
发明内容
为了解决上述问题,提供了发光装置及其制造方法。根据一个实施例,提供了一种发光装置,其包括具有凹槽的基板以及位于基板上的层间介电层。所述层间介电层可具有第一孔洞和第二孔洞,所述第一孔洞开设在所述基板的凹槽上方。所述发光装置还可以包括第一和第二微型发光元件,所述第一微型发光元件的厚度大于所述第二微型发光元件的厚度。所述第一微型发光元件和所述第二微型发光元件可以分别放置在所述第一孔洞和所述第二孔洞中。
提供本发明内容是为了以简化的形式介绍将在以下详细描述中进一步描述的概念的选择。本发明内容部分不是旨在表明所要求保护的主题的关键特征或基本特征,也不旨在用于限制所要求保护的主题的范围。此外,要求保护的主题不限于解决本公开的任何部分中提到的任何或全部缺点的实施方式。
附图说明
在附图的图中以示例的方式而不是以限制的方式来说明本公开,其中相同的附图标号表示相同的元件。
图1A-B示出了根据本发明的第一实施例的发光装置的示意图。
图2示出了根据本发明第二实施例的发光装置的示意图。
图3A-B示出了根据本发明第三实施例的发光装置的示意图。
图3C示出了根据本发明第五实施例的发光装置的示意图。
图4A-H示出了用于制造根据本发明第一实施例的发光装置的工艺的概况。
图5A-B示出了用于制造根据本发明第一实施例的发光装置的自对准工艺的示意图。
图6示出了用于制造根据本发明第一实施例的发光装置的一变更工艺的概况。
图7A-B示出了根据本发明第四实施例的发光装置的示意图。
具体实施方式
现在本发明的选定实施例将参考附图进行描述。对于本领域技术人员而言将显而易见的是,本公开中本发明的实施例的以下描述仅被提供用于说明,而不是为了限制由所附权利要求及其等同物限定的本发明的目的。
首先参考图1A,根据本发明的第一实施例,发光装置10被提供。图1A示出了发光装置10(在本文中或被称为“LED”)的横截面图。发光装置10包括具有凹槽30的基板20、位于基板20上且具有第一孔洞22及第二孔洞24的层间介电层40,第一孔洞22开设于基板20的凹槽30上方以与凹槽30连通。发光装置10还可以包括位于层间介电层40中的第三孔洞26,其具有与第二孔洞24不同的尺寸。通常,第一孔洞22、第二孔洞24和第三孔洞26具有彼此不同的尺寸。对于孔洞的横截面可以有许多种形状,对于不同尺寸的孔洞可以有许多种尺寸。在一个具体的示例中,第一孔洞22、第二孔洞24和第三孔洞26可以被构造成分别具有在95和115μm之间,在70和90μm之间以及在45和65μm之间的直径的圆形形状。并且,在一个更具体的示例中,相应的尺寸可以是105μm、80μm和55μm。通常,孔洞的有效直径的尺寸被设定为比相应的微型LED大几微米(例如,1-6μm,并且更通常的为3μm),以允许微型LED装配在孔洞内而不太容易被移除。利用这种配置,孔洞用于在制备过程中的流体输送过程中机械地捕获不同尺寸的微型LED,如下面更详细地解释的。
在图1A中,第一孔洞22在顶部和底部分别由虚线A和B描绘,并且凹槽30在顶部由虚线B描绘。虚线A表示沿着层间介电层40的上表面的平面在第一孔洞22上延伸的假想平面,而虚线B代表描绘凹槽30和第一孔洞22之间的边界的假想平面,该假想平面沿基板20的上表面的平面在凹槽30上方延伸。在所描绘的实施例中,凹槽30的深度被配置成基本上等于层间介电层40的厚度,但是应该理解,其他配置是可能的,并且与层间介电层40的厚度相比凹槽30可以是更浅或更深,只要如下面所述的,选择凹槽30和第一孔洞22的总厚度以匹配相应的微型LED的厚度即可。由此,形成了可以选择性地捕获较大装置的捕获位置。第一孔洞22、第二孔洞24和第三孔洞26可以被配置为具有基本上等于层间介电层40的厚度的厚度。在示例配置中,该层间介电层40的厚度可以被选择为在0.1和100μm之间,并且更具体地可以被选择为在1和50μm之间,并且在一个特定实施例中可以是5μm。在图1A中,可以理解的,为了说明的目的,微型LED已经被移除。
该凹槽30设置在该基板20的上表面上,该基板20优选为透明基板,其可以包括塑料、聚合物(例如聚酰亚胺)或玻璃(穿孔玻璃、石英玻璃或蓝宝石玻璃),或由所述材质形成。可选地,透明基板可以是包括具有两层的基板的叠层板。通常,该凹槽30的深度被选择在0.1和100μm之间,并且更具体地可以在1和50μm之间,并且在一个特定实施例中可以是5μm。该凹槽30可以被配置为与第一孔洞22对应的形状和尺寸,在一个具体示例中,第一孔洞22可以是直径在95和115μm之间或者更具体的为105μm的圆形。可选地,该凹槽30可以被压印或蚀刻以在同一基板20上具有不同的深度,以适应不同深度的微型LED装置。
通常位于基板20的上表面上的层间介电层40在该实施例中包括诸如丙烯酸树脂或聚酰亚胺树脂的聚合物材料,但是可替代的也可以包括氮化硅(SiNx)或氧化硅(SiO)。层间介电层40的厚度可以被设置为在0.1和100μm之间的范围内,且更具体地在1和50μm之间。
参考图1B,微型LED被示出在孔和凹槽30中以说明发光装置10的最终组装。第一微型LED12具有大于第二微型LED14的厚度并且被放置在第一孔洞22中,并且第二微型LED14位于第二孔洞24中。第三微型LED16可以位于第三孔洞26中且可具有与第二微型LED14不同的尺寸。第一微型LED12和第二微型LED16可以设置在发光装置10上,使得该层间介电层40的上表面、第一微型LED12的上表面以及第二微型LED14的上表面基本平齐,从而不需要在组装后通过使用诸如CMP的抛光工艺或者通过添加附加层等等方式平坦化发光装置10的上表面。以这种方式,可以容易地在发光装置10上的齐平面上制造诸如光学膜等的覆盖层。该第一孔洞22和该第二孔洞24分别被设置成略微大于其对应的微型LED,即,第一微型LED 12和第二微型LED14。例如,微型LED的直径被设置为使得第一孔洞22、第二孔洞24和第三孔洞26分别具有比该第一微型LED12、该第二微型LED14和第三微型LED16分别大预定距离(例如5μm)的直径,从而使微型LED就像如下所述的在流体输送组装期间较容易地下沉到它们各自的孔洞中。可选地,在另一实施例中,该第一微型LED12、该第二微型LED14和第三微型LED16的上表面可以低于层间介电层40的上表面,并且如果需要的,可以应用后续的平坦化工艺,例如通过在微型LED顶上添加材料或通过去除层间介电层40的上表面上的材料,来平坦化组件的上表面。
如上所述的孔22、24、26一样,可以理解,该第一微型LED12、该第二微型LED14和第三微型LED16也具有不同的尺寸,并且这些不同的尺寸可以表现为各自的上表面面积的不同。例如,该第一微型LED12的上表面的面积比第二微型LED14的上表面的面积大,且第二微型LED14的上表面的面积又比第三微型LED16的上表面的面积大。作为上表面面积可变化的程度的示例,第二微型LED14的上表面和第二孔洞24对应的上开口的面积可至少大于第三微型LED16和第三孔洞26对应的上开口的面积的1.2倍,更具体地,可以大于1.5倍。可以理解,由于期望在微型LED之间获得均匀的感知亮度,因此这些示例性的尺寸的不同是基于每种类型的微型LED的发光强度的不同,及考虑到制造工艺余量、成本和其他因素。关于微型LED的形状,在所描绘的实施例中,微型LED设置为圆柱状。在一个特定的配置中,该第一微型LED12可具有100μm的直径,该第二微型LED14可具有75μm的直径,并且该第三微型LED16可具有50μm的直径。可以理解,然而,所述直径可以在1和1000μm之间的范围内。可以理解的是,由于上述的尺寸差异,微型LED可通过在连续波中的流体传输进行自组装,其中最大型号的微型LED首先被传输并填充可用的位置,然后是中型尺寸的微型LED被输送并填充中型尺寸的位置,并且最后最小型号的微型LED被输送并填充剩余的位置,以在发光装置10上实现基本上全部位置被填充的平坦的上表面,而不需要组装后使用CMP等抛光方法或附加的调平方法。
该第一微型LED12、该第二微型LED14和该第三微型LED16可用于分别发红光、绿光和蓝光,并且一起可以作用为发期望颜色和强度的混合光的像素。该红色微型LED通常可以砷化镓为基质,因此可以比以氮化镓为基质的蓝色和绿色微型LED更厚。该红色微型LED通常具有较弱的每单位面积的发光强度,因此该红色微型LED可被配置为具有较大的发光面积来进行补偿,从而实现与其他微型LED相似的发光强度。以这种方式,微型LED的厚度和面积可变化。作为示例厚度,该第一微型LED12的厚度可分别大于该第二微型LED14和该第三微型LED16的厚度。在一个特定实施例中,该第一微型LED12可具有10μm的厚度,该第二微型LED14可具有5μm的厚度,并且该第三微型LED16可具有5μm的厚度,虽然这些厚度可能存在差异。这种厚度的特定配置使得层间介电层40的上表面和该第一微型LED12、该第二微型LED14和该第三微型LED16的上表面基本上平齐,而不需要应用抛光工艺,诸如CMP工艺,以平坦化发光装置10的上表面。
该第一微型LED12、该第二微型LED、14和该第三微型LED16具有用作发射已知峰值光谱的发光面的上表面以及用作连接电极的背表面。例如,该第一微型LED12可包括峰值光谱为630nm(红色)的磷化铝镓铟(AlGaInP),该第二微型LED14可以包括峰值光谱为517nm(绿色)的氮化铟镓(InGaN),并且该第三微型LED13可以包括峰值光谱为460nm(蓝色)的氮化镓(GaN)。
通过提供如第一实施例中所示的发光装置10,该发光装置10包括形成在基板20中的凹槽30,以及具有第一孔洞22和第二孔洞24的层间介电层40,第一孔洞22开设在基板20的凹槽30上方,第一微型LED12的厚度大于第二微型LED14,该第一微型LED12和该第二微型LED14分别位于第一孔洞22和第二孔洞24中,不同厚度的LED可以容易且可靠地定位在基板20上,从而在发光装置10上实现平坦的上表面,而不需要在组装之后使用抛光方法,例如CMP或附加的调平。
如图2所示,根据本发明的第二实施例提供发光装置110。图2示出了第一微型LED112附近的发光装置110的放大截面图。在第二实施例的发光装置110中,如横截面所示,基板120的凹槽130可具有锥形形状,并且层间介电层140中的第一孔洞122在横截面中也具有锥形形状。在图2中,T1和T2分别是凹槽130和第一孔洞122相对于水平面的锥角。T3是该第一微型LED112相对于水平面的锥角。在所描绘的实施例中,T3与T1和T2相同,但是应该理解,T3可以不同于T1和/或T1。例如,该凹槽130和该第一孔洞122可以相对于水平取向成30至60度的角度逐渐变细,使得夹角T1和T2形成为30至60度之间的角度。在一更具体的实施例中,如图所示,角度T1和T2可形成为45度。虽然T1和T2在所描绘的实施例中被示出为是相同的值,但是可以理解的,T1和T2中可以是在例如30至60度的范围内形成的不同的角度。在一个特定的替代实施例中,层间介电层140中的第一孔洞122不具有锥形(T2=90度),而凹槽是锥形的,使得T1在70度与85度之间,并且该第一微型LED112具有在70和85度之间的锥角,使得T1=T3。锥形结构有助于当微型LED在孔洞上方流体输送时,定位电极和微型LED对位恰当,并在重力作用下沉入孔洞内。
尽管仅在图2中仅作为截面图示出,可以理解的是,该第一微型LED112的形状可以是圆盘形或八边形或六边形等多边形,并具有与上述锥形凹槽和孔类似的锥形侧面。由于该锥形侧面,发光面112a(即上表面)的面积比所述第一微型LED112的电极面112b(即底表面)的面积大。因此,位于第一孔洞122和凹槽130中的第一微型LED112,被配置成允许其容易地配合到第一孔洞122和凹槽130中的形状。尽管在图2的发光装置110中仅示出单个锥形的孔洞122和单个锥形的微型LED112,可以理解的,这是为了说明的目的来描述锥形侧面的可能性,并且在本文描述的其它实施例中的所有或选定的多个孔、凹槽和微型LED可形成类似如图2所示的锥形,以涵盖各种排列,包括其中仅孔洞渐缩且微型LED不渐缩的实施例。因此,下面描述的第二微型LED和第三微型LED及其相应的孔可以具有与该第一微型LED112类似的结构。上述的盘形或多边形有助于抑制在制造过程中微型LED的流体输送过程中微型LED聚集一起成一块,由此促进它们在整个基板上的分布并且快速沉降到分布在基板上的孔洞中。
参考图3A,示出了第三实施例的发光装置210的点阵图案区域244的俯视平面图,其也可被称为像素。可以理解的是,发光装置210可包括由点阵图案区域244体现的多个这样的点阵图案,例如以多行和多列的形式布置为网格或其他重复图案作为显示器、电视、天花板灯、车灯等。本实施例的发光装置210具有配置在点阵图案区域244内的四个微型LED,包括:用于发红光的第一微型LED212、用于发绿光的第二微型LED214、用于发蓝光的第三微型LED216以及也用于发蓝光的第四微型LED218。在点阵图案区域244中的两个蓝色微型LED的配置旨在通过考虑以下事实来改善色域:人类的光谱灵敏度在较短的波长处通常较弱(在人类中,光谱灵敏度大致在三个峰值处被识别,分别大致对应红色、绿色和蓝色;最强的峰是绿色,其次是红色和蓝色)。第三微型LED216和第四微型LED218可能不需要具有相同的峰值光谱。例如,第三微型LED216可以包括具有450nm的峰值光谱的GaN,并且第四微型LED218可以包括具有470nm的峰值光谱的GaN。
像第一实施例一样,图3A中描绘的四个微型LED被配置为圆柱状,尽管可以使用其他形状。在一个具体示例中,第一微型LED212可具有在90和110μm之间的直径,诸如100μm,第二微型LED214可具有在65和85μm之间的直径,诸如75μm,并且第三和第四微型LED216,218可以具有在40和60μm之间的直径,例如50μm。如上所述,红色微型LED由于其构成材料而经常被设置为比绿色或蓝色微型LED更厚。因此,第一微型LED212的厚度通常被设置为比第二、第三和第四微型LED214,216,218更厚。因此,在一个具体示例中,第一微型LED212具有在8和12μm之间的厚度,例如10μm,第二微型LED214具有在4和6μm之间的厚度,例如5μm,且第三和第四微型LED216,218具有在4和6μm之间的厚度,例如5μm。
参照图3B,示出了发光装置210的点阵图案区域244中的电极242a、242b和242c的俯视平面图。为了说明的目的,在该图中微型LED已被移除。第一孔洞222、第二孔洞224、第三孔洞226以及第四孔洞228位于层间介电层240中。第一电极242a用于电接触放置于第一孔洞222中的第一微型LED212的电极表面,第二电极242b用于电接触放置在第二孔洞224中的第二微型LED214的电极表面,并且第三电极242c用于电接触放置在第三孔洞226中的第三微型LED216和放置在第四孔洞228中第四微型LED218的电极表面。第一电极242a、第二电极242b和第三电极242c相互不交叉。第三电极242c呈锯齿形以避免与第一微型LED212或第二微型LED214以及其各自的电极接触。
在本实施例中,层间介电层240不仅隔离微型LED的电极242a,242b和242c,而且还提供用于选择性地俘获布置的器件同时排除更大的器件的孔洞。可依靠焊料或共晶接触来确保电极与所布置的器件之间良好的电接触。在组装期间,焊料也可以是液体,并提供与元件的毛细作用力相互作用以帮助捕获。
参考图3C,第五实施例的发光装置410的点阵图案区域444(即像素)的俯视平面图被示出,其中与图3A和图3B的实施例相比,为了考虑人类的光谱灵敏度,对于相关联的微型LED形成在其中的每个孔洞的尺寸已经被调整。与第三实施例一样,可以理解的是,发光装置410可以包括多个这样的由点阵图案区域444体现的点阵图案。为了说明的目的,在该图中微型LED已被移除。第一孔洞422a-b,第二孔洞424a-c和第三洞孔426a-d位于层间介电层440中。第一顶部引线电极442d和第一底部引线电极442a用于电接触放置在第一孔洞422a-b中的红色微型LED的电极表面,由此形成红色子像素。第二顶部引线电极442e和第二底部引线电极442b用于电接触放置在第二孔洞424a-c中的绿色微型LED的电极表面,由此形成绿色子像素。第三顶部引线电极442f和第三底部引线电极442a用于电接触放置在第三孔洞426a-d中的蓝色微型LED的电极表面由此形成蓝色子像素。顶部引线电极442d-f和底部引线电极442a-c在它们相互交叉处不形成电连接,而是与微型LED电接触。可以理解的是,每个微型LED配置有两个电引线,一个电连接到顶部引线电极,另一个电连接到底部引线电极。在该实施例中,放置在第一孔洞422a-b中的第一微型LED可具有在20和75μm之间的直径,例如45μm,放置在第二孔洞424a-c中的第二微型LED可具有在40和100之间的直径,例如70μm,且放置在第三孔洞426a-d中的第三微型LED可具有在50和200μm之间的直径,例如100μm。如下所述,可以理解的是,在流体组装期间,最大直径的微型LED被输送到第一阶段以填充最大直径的孔洞,随后在第二阶段中第二大的,然后在第三阶段中第三大的。蓝色、红色和绿色子像素中的所有LED的总微型LED面积可以设置为具有6:3:2的比率(针对蓝色:红色:绿色)。包含红色微型LED的孔洞422a-b的深度通常比蓝色和绿色微型LED的孔洞424a-c,426a-d更深,以收容更厚的红色微型LED,并且因此这些孔中仅孔422a-b具有包括延伸到基板中的凹槽的横截面结构,类似于如上所述的图1A的实施例中的凹槽30。该实施例中嵌入的红色微型LED由磷化铝镓铟(AlGalnP)制造,而蓝色和绿色LED则基于具有不同铟掺杂量的的氮化镓(GaN)。蓝色和绿色微型LED的厚度相同大约为5μm,而红色微型LED大约为10μm厚度或更大。当然,这些仅仅是示例性的测量,并且可以利用其他尺寸的LED。可以理解的是,人类视觉平均对绿光最敏感,其次是红光,对蓝光最不敏感。因此,本实施例中的微型LED的尺寸、位置和数量已经被调整,以针对每种颜色的子像素实现相同或相似的亮度,从而考虑到LED本身的每单位面积的发光强度的变化以及人眼对每个子像素发出的红、蓝、绿光波长的视觉敏感度。
图4A-F为横截面图呈现了用于制造根据本发明的第一实施例的图1A-B的发光装置10的示例方法的制造步骤。
图4A-B展示了基板20形成在基底上的情况(为了简洁起见,基底在图中被省略了)。在基板20上沉积一阻挡层[46作为掩模层,通过光蚀刻将其图案化形成预定图案,并且通过湿法蚀刻或浮雕刻蚀以在基板20上形成凹槽30。形成在基板20中的凹槽30的深度被设置为基本上等于层间介电层40中的第一孔洞22的厚度(即深度)。因此,可选择性地俘获较大器件的捕获位置被创建了。该阻挡层46随后通过灰化或溶解被去除。
图4C展示了当电极42形成在具有凹槽30的基板20上时的情况。该电极42可包括金属(诸如铝、铜)或ITO(氧化铟锡)。该电极42可通过例如溅射、电镀和剥离(lift-off)的方法来形成。该电极42与被正确地放置且对准在其各自的孔洞内的微型LED的电极表面电连接。可以理解的是,电极42被设置为相对于微型LED更薄,使得电极42的厚度不会干扰微型LED在其各自孔内的的放置和对准。为了进一步改善电极42与微型LED的电极表面的电连接,电极42可形成在设置在基板20中的专用凹槽内。
图4D展示了当层间介电层40形成在基板20上时的情况。第一孔洞22被形成在该层间介电层40中,开设在基板20的凹槽30上方,以暴露该电极42的至少一部分。第二孔洞24和第三孔洞26被形成在层间介电层40中的预设位置,以暴露电极42的至少一部分。该层间介电层40可以包括光敏树脂,其可以单独地沉积到基板20上或者通过处理工艺由基板20的一部分制造而成。
图4E-F描绘了第一流体输送阶段。可以理解的,较大较重的元件通常在第一流体输送阶段中被流体输送,而较小的较轻的元件在后续阶段中被流体输送,较大的元件首先填充较大的捕获位置并通过较小的空的捕获位置,较小的元件随后填充较小的捕获位置。在第一流体输送阶段中,第一微型LED12被流体输送到第一孔洞22。附图的左侧代表流体流动路径的上游部分,由黑色箭头表示,微型LED沿着该上游部分被流体输送,而图的右侧代表下游部分。然而,可以理解的是,上游部分和下游部分可被指定在发光装置10上相对于孔洞和基板20的其他位置处。首先,第一微型LED12被转移到一流体中以形成油墨或浆料。然后该浆料被分布在基板20的上表面和上游部分的层间介电层40上。在第一流体输送阶段的低速俘获时段期间,第一流体输送阶段的流动速度可为在表面局部5至200μm/秒的持续速度,其中第一微型LED12通过重力驱动在下游方向的流体输送被放置在第一孔洞22中(参见图4F)。在LED分布在表面上的第一流体输送阶段的分布周期期间,流体还可为高振幅(例如大于1mm/sec)振荡或脉冲,假如还存在低速捕获周期在此期间LED被允许沉降。在较高的流体夹带盘片速度下(例如盘片速度超过大约200μm/s),该第一微型LED12可能无法自对准到第一孔洞22和凹槽30或其他器件(第二微型LED14或第三微型LED16)可以设置在第一孔洞22中而不是第一微型LED12。可以理解的,自对准可能不会发生的盘片速度受到盘片和井的尺寸影响。此外,盘片速度和流体速度之间的关系受输送流体性质的影响。因此,在表面局部5至100μm/s范围内的盘片速度改善了第一微型LED12在第一孔洞22中的对准和布置。可以理解的,第一流体输送阶段可以在一个制造过程中以可变的流体速度和方向重复多次。
图4G-H分别描绘了第二和第三流体输送阶段。在第二流体输送阶段,该第二微型LED14被流体输送到第二孔洞24中。在第三流体输送阶段,该第三微型LED16被流体输送到第三孔26洞。附图的左侧代表流体流动路径的上游部分,由黑色箭头表示,微型LED沿着该上游部分被流体输送,而图的右侧代表下游部分。然而,可以理解的是,上游部分和下游部分可以被指定在发光装置10相对于孔洞和基板20的其他位置处。在第二流体输送阶段中,第二微型LED14被初始地转移到一流体以形成油墨或浆料。类似地,在第三流体输送阶段中,第三微型LED16最初被初始地转移到一流体中以形成油墨或浆料。然后该浆料被分布在基板20的上表面和上游部分的层间介电层40上。可以理解的,第二和第三流体输阶段可以在一个制造过程中以可变的流体速度和方向重复多次。
在第二流体输送阶段的捕获阶段期间,第二流体输送阶段的流体速度可以是5至100μm/s范围内的持续速度,其中该第二微型LED14在下游方向通过流体输送被放置在第二孔洞24中,并且除了第二微型LED14之外的器件被逐出第二孔洞24中。在第二流体输送阶段的分配时段期间,可以使用诸如1mm/s的较高速度来分配该阶段的LED跨越表面用以沉降。例如,图5A描绘了流体输送将第三微型LED16从第二孔洞24逐出的情况。在超过100μm/s的流体夹带盘片速度下,该第二微型LED14可能不能自对准到第二孔洞24中,或其他器件可以设置在第二孔洞24中而不是该第二微型LED14。例如,图5B描绘了第三微型LED16而不是第二微型LED14被放置在第二孔洞24中的情况。因此,从5至100μm/s范围内的持续流体速度改善了第二微型LED14在该第二孔洞24中的对准和放置,同时恶化其他器件在第二孔洞24中的对准和放置,尤其是当浆液包括分配在相同输送阶段中的各种器件时。可以认为,在一定的流体速度下,在配置有不匹配的器件的孔洞内的间隙之间会产生充分的湍流,从而使不匹配的器件从孔洞中移出。同时,如果不匹配器件的端子部分从孔洞中突出,则沿着LED表面的层流的中断会产生足够的湍流,从而向不匹配元件的端子部分施加向上的力,由此从孔洞里移除该器件。可以理解的是,同样地,该第三微型LED16以在允许其自对准到第三孔洞26中的范围内(例如从5至100μm/s持续的)的流体速度被输送。考虑到该第一微型LED12相对于该第二微型LED14和该第三微型LED16的较重质量,该第一流体输送阶段的流体速度可配置为比第二和第三流体输送阶段的流体速度快。因此,该第一微型LED12的流体自组装也是可能的,尽管其质量相对于该第二微型LED14和该第三微型LED16更重。可以理解的,在流体输送阶段期间可以同时利用其他工艺来影响微型LED的流体输送,诸如各种分散技术以在流体输送期间帮助均匀地分配微型LED。组装后,油墨或浆料随后通过诸如蒸发的工艺从发光装置10中去除。
通过上述的连续批量组装方法,大型元件可以位于较大的孔洞中,同时防止陷入较小的孔洞中。随后,较小的元件可组装在其对应的孔洞中,此时这些孔已通过预先组装更大的器件和孔的尺寸排除而分别从较大的孔和较小的孔中排除。以这种方式,可以将多种元件类型组装到单个基板上,从而得到平坦的布局结构,这有利于下游处理和集成而不需要CMP或过度使用聚合物调平层,从而可以限制聚合物(例如聚酰亚胺)的使用以图案化电触点、固定和保护器件、以及桥接凹槽和微型LED之间的间隙。
图6为呈现用于制造根据本发明的第一实施例图1A-B的发光装置10的变更实施例方法的制造步骤的横截面图。如图4G-H,附图的左侧代表流体流动路径的上游部分,由黑色箭头表示,微型LED沿着该上游部分被流体输送,而图的右侧代表下游部分。然而,可以理解的是,上游部分和下游部分可以被指定在发光装置10相对于孔洞和基板20的其他位置处。图6呈现了变更的第二流体输送阶段,其中该第二微型LED14被流体输送到第二孔洞24,且该第三微型LED16被流体输送到第三孔洞26。本质上,变更的第二流体输送阶段结合了图4G-H所示的第二流体输送阶段和第三流体输送阶段为一个阶段。在变更的第二流体传输阶段中,该第二微型LED14和该第三微型LED16初始被转移到一流体中以形成油墨或浆料。然后该浆料被分布在基板20的上表面和上游部分的层间介电层40上。如图4G-H所示,变更的第二流体输送阶段的流体速度可以被设置在一范围内使得该第二微型LED14和该第三微型LED6可分别适当地自对准到第二孔洞24和第三孔洞26中。
参考图7A,根据本发明的第四实施例发光装置310被提供。由于第四实施例的结构大致类似于第一实施例,因此为了简洁起见,在此省略其详细描述。应该注意的是,在整个详细描述和附图中,相同的部分由相同的附图标记表示。图7A展示了发光装置310的横截面图。该实施例的基板320具有第一通孔332,第一通孔332形成于凹槽330的底部且开口以与在凹槽330上方开口的对应第一孔洞322连通。该基板320还具有第二通孔334,第二通孔334形成在层间介电层340中的第二孔洞324的底部,该第二孔洞324不位于凹槽330上方。一第三通孔336也位于基板320上,其形成在层间介电层340中的第三孔洞326的底部。
上述用于制造发光装置的方法可以修改,以便制造发光装置310,进一步包括形成多个通孔(第一通孔332,第二通孔334和第三通孔336),每个通孔对应于层间介电层的第一孔洞322、第二孔洞324和第三孔洞326之一。该第一通孔332被构造成具有比该第二通孔334更大的宽度,该第二通孔334又具有比该第三通孔336更大的宽度。在形成基板320的凹槽330之后,该第一通孔332、该第二通孔334和该第三通孔336通过蚀刻形成在基板320中。形成在该凹槽330底部的该第一通孔332预定在层间介电层340中的第一孔洞322处。该第二通孔334和该第三通孔336形成在该基板320中,分别预定在层间介质层340中位于第二孔洞324和第三孔洞326的底部。
该第一通孔332、该第二通孔334和该第三通孔336用于在第一流体输送阶段或第二流体输送阶段中汲取一部分输送流体。在该第一流体输送阶段,真空装置(未示出)通过该第一通孔332汲取一部分输送流体,以通过流体输送将第一微型LED312拉入该第一孔洞322和该凹槽330中。同时,真空装置还通过该第二通孔334和该第三通孔336汲取颗粒。可以理解的,微型LED非常小且薄,有时在制造过程期间或之前破裂。因此,第一微型LED的碎片可以形成穿过通孔332的颗粒。
在该第二流体输送阶段,真空装置通过该第二通孔334和该第三通孔336汲取一部分输送流体,以通过流体输送分别将该第二微型LED314和该第三微型LED316拉入第二孔洞324和第三孔洞326中。同时,该真空装置还通过该第一通孔332汲取颗粒。颗粒可以包括该第二微型LED314和该第三微型LED316的碎片。油墨或浆料可随后通过工艺,如蒸发,从发光装置310中移除。
因此,在每个组装位置处包括通孔可以去除碎屑,例如油墨杂质或装置碎片。如果尺寸合适,与孔洞和凹槽结合的通孔可以实现微型LED的同时和选择性自组装,潜在地简化和缩短组装过程,以及使被捕获的未放置的装置能够重复使用。
可以理解的,这里描述的配置和/或方法本质上是示例性的,并且这些具体实施例或示例不应被认为是限制性的,因为许多变化是可能的。这里描述的具体例程或方法可以表示任何数量的处理策略中的一个或多个。如此,所示出和/或描述的各种动作可以以所示和/或描述的顺序,以其他顺序,并行或省略的方式执行。类似地,可以改变上述制程的顺序。
本公开的主题包括本文所公开的各种制程、系统和配置以及其他特征、功能、行为和/或特性以及其任何和所有等同物的所有新颖和非显而易见的组合和子组合。
Claims (20)
1.一种发光装置,包括:
具有凹槽的基板;
位于所述基板上的层间介电层,所述层间介电层具有第一孔洞和第二孔洞,所述第一孔洞开设于所述基板的所述凹槽上方;
第一微型发光元件和第二微型发光元件,所述第一微型发光元件的厚度大于所述第二微型发光元件的厚度,并且所述第一微型发光元件被放置在所述第一孔洞和所述凹槽中;以及
所述第二微型发光元件位于所述第二孔洞中。
2.如权利要求1所述的发光装置,其特征在于:所述层间介电层的上表面、所述第一微型发光元件的上表面以及所述第二微型发光元件的上表面基本上平齐。
3.如权利要求1所述的发光装置,其特征在于:所述发光装置进一步包括:
在所述层间介电层中的第三孔洞,其具有与所述第二孔洞不同的尺寸;以及
第三微型发光元件,其具有与所述第二微型发光元件不同的尺寸并且位于所述第三孔洞中。
4.如权利要求3所述的发光装置,其特征在于:所述第二孔洞和所述第二微型发光元件分别比所述第三孔洞和所述第三微型发光元件大至少1.2倍。
5.如权利要求3所述的发光装置,其特征在于:所述第一孔洞、所述第二孔洞和所述第三孔洞具有不同的尺寸,所述第一微型发光元件、所述第二微型发光元件和所述第三微型发光元件具有不同的尺寸。
6.如权利要求5所述的发光装置,其特征在于:所述第一、第二和第三微型发光元件用于分别发红光、绿光和蓝光,并且其中所述第一微型发光元件的厚度分别大于所述第二和第三微型发光元件的厚度。
7.如权利要求6所述的发光装置,其特征在于:所述第一微型发光元件的上表面的面积大于所述第二微型发光元件的上表面的面积,并且所述第二微型发光元件的上表面的面积又大于所述第三微型发光元件的上表面的面积。
8.如权利要求6所述的发光装置,其特征在于:所述发光装置进一步包括:
在所述层间介电层中的第四孔洞;以及
位于所述第四孔洞中的第四微型发光元件,其用于发蓝光。
9.如权利要求1所述的发光装置,其特征在于:所述基板中的凹槽的深度基本上等于所述层间介电层的厚度。
10.如权利要求1所述的发光装置,其特征在于:所述基板具有第一通孔和第二通孔,所述第一通孔形成在所述凹槽的底部并且与开设在所述基板的所述凹槽上的相应的第一孔洞连通,且所述第二通孔形成在未定位在所述凹槽底部的所述第二孔洞的底部。
11.如权利要求1所述的发光装置,其特征在于:所述发光装置的形状是发光面的面积比电极表面大的盘状,或发光面的面积比电极表面大的多边形。
12.如权利要求1所述的发光装置,其特征在于:所述基板的凹槽具有锥形形状。
13.如权利要求1所述的发光装置,其特征在于:所述第一和第二孔洞分别比对应的第一和第二微型发光元件稍大。
14.一种制造发光装置的方法,其包括:
在基板上形成凹槽;
在基板上提供层间介电层;
在所述层间介电层中形成第一孔洞,所述第一孔洞开设在所述基板的所述凹槽上方;
在所述层间介电层中形成第二孔洞;
在第一流体输送阶段中,将第一微型发光元件流体输送到所述第一孔洞和所述凹槽中;以及
在第二流体输送阶段中,将第二微型发光元件流体输送到第二孔洞中。
15.如权利要求14所述的制造发光装置的方法,其特征在于:所述第一流体输送阶段的流体速度比第二流体输送阶段的流体速度快。
16.如权利要求14所述的制造发光装置的方法,其特征在于:在所述第一流体输送阶段的捕获阶段期间,所述第一流体输送阶段的流体速度为5至200μm/s的持续速度。
17.如权利要求14所述的制造发光装置的方法,其特征在于:在所述第二流体输送阶段的捕获阶段期间,所述第二流体输送阶段的流体速度为5至200μm/s的持续速度。
18.如权利要求14所述的制造发光装置的方法,其特征在于:形成在所述基板中的所述凹槽的深度基本上等于所述层间介电层中的第一孔洞的厚度。
19.如权利要求14所述的制造发光装置的方法,其特征在于:该方法进一步包括:
在所述层间介电层中形成第三孔洞;以及
在第三流体输送阶段中,将第三微型发光元件流体输送到第三孔洞中。
20.如权利要求14所述的制造发光装置的方法,其特征在于:该方法进一步包括:
在基板中形成多个通孔,每个通孔对应于层间介电层的第一孔洞和第二孔洞中的一个;以及
在第一流体输送阶段或第二流体输送阶段中,将一部分输送流体汲入通孔中。
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WO2016209792A1 (en) | 2016-12-29 |
CN108028169A (zh) | 2018-05-11 |
US9722145B2 (en) | 2017-08-01 |
KR20180020239A (ko) | 2018-02-27 |
KR20190111151A (ko) | 2019-10-01 |
US20170317242A1 (en) | 2017-11-02 |
US10930819B2 (en) | 2021-02-23 |
US20190181304A1 (en) | 2019-06-13 |
EP3314631B1 (en) | 2020-10-07 |
EP3314631A1 (en) | 2018-05-02 |
US20160380158A1 (en) | 2016-12-29 |
EP3314631A4 (en) | 2019-06-05 |
JP6538886B2 (ja) | 2019-07-03 |
US10230020B2 (en) | 2019-03-12 |
KR102042178B1 (ko) | 2019-11-07 |
KR102156092B1 (ko) | 2020-09-16 |
US20210151633A1 (en) | 2021-05-20 |
US11721792B2 (en) | 2023-08-08 |
JP2018528601A (ja) | 2018-09-27 |
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