CN107848788B - 具有容差沟槽的加固的晶圆级mems力传感器 - Google Patents
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Abstract
本文描述了一种示例MEMS力传感器。MEMS力传感器可包括用于接收施加的力的盖以及粘结至盖的传感器。沟槽和腔可形成在传感器中。沟槽可沿着传感器的周边边缘的至少一部分形成。可密封在盖和传感器之间的腔可限定外壁和柔性感测元件,并且外壁可布置在沟槽和腔之间。传感器还可包括形成在柔性感测元件上的传感器元件。传感器元件可响应于柔性感测元件的挠曲而更改电特性。
Description
相关申请的交叉引用
本申请要求2015年6月10日提交的名称为“RUGGEDIZED WAFER LEVEL MEMS FORCESENSOR WITH A TOLERANCE TRENCH”(具有容差沟槽的加固的晶圆级MEMS力传感器)的美国临时专利申请62/173,420的权益,该临时专利申请的公开内容明确地全文以引用方式并入本文。
关于联邦资助的研究的声明
本发明是以美国国家科学基金会授予的SBIR奖No.1353450在政府的支持下进行的。政府对本发明拥有一定的权利。
背景技术
常规技术微机电(MEMS)力裸片基于将施加的力连接到感测隔膜的中心,该感测薄膜上形成有四个压阻式应变仪。接触焊盘围绕隔膜定位,这使常规MEMS力裸片相对较大。此外,常规MEMS力裸片易碎、缺乏其它力感测技术(例如力敏电阻器)的稳健性,并且易受来自外部环境的碎屑的影响。因此,在相关领域中需要小型、低成本的硅力传感器,该硅力传感器可被密封并且对于机械过载具有稳健性。
发明内容
在本文中描述了示例MEMS力传感器。MEMS力传感器可包括用于接收施加的力的盖以及粘结至盖的传感器。沟槽和腔可形成在传感器中。沟槽可沿着传感器的周边边缘的至少一部分形成。腔可限定外壁和柔性感测元件,并且外壁可布置在沟槽和腔之间。腔可被密封在盖和传感器之间。传感器还可包括形成在柔性感测元件上的传感器元件。传感器元件可响应于柔性感测元件的挠曲而更改电特性。
另外,外壁的至少一部分的厚度可任选地由沟槽的尺寸或宽度确定。另选地或除此之外,外壁部分的厚度可任选地被构造成提供预定水平的力测量灵敏度。另选地或除此之外,沟槽可任选地被构造成将外壁的部分与划片刀隔离。
任选地,可从传感器蚀刻沟槽和腔,并且沟槽的深度和腔的深度可大致相等。
另选地或除此之外,传感器和盖可任选地沿着外壁的至少一部分粘结。
任选地,腔可限定凸出部,该凸出部从外壁向内朝向传感器的中心延伸。另外,传感器和盖可任选地沿着凸出部的至少一部分粘结。
另选地或除此之外,MEMS力传感器可包括形成在盖或传感器中的至少一者中的间隙。任选地,间隙的深度可被构造成限制柔性感测元件的挠曲量。
另选地或除此之外,传感器可具有与周边边缘间隔开的中心,并且间隙可与传感器的中心重叠。
另选地或除此之外,腔可包括整个包封在盖和传感器之间的体积。
另选地或除此之外,腔可限定多个柔性感测元件。
在本文还描述了用于制造MEMS力传感器的方法。该方法可包括:提供基底,该基底具有第一表面以及与第一表面相背对的第二表面;在基底的第一表面上形成至少一个传感器元件;以及倒置基底以暴露基底的第二表面。该方法还可包括蚀刻基底的第二表面以形成腔,其中腔限定外壁以及至少一个柔性感测元件;以及蚀刻基底的第二表面以形成沟槽。该方法还可包括将基底的第二表面粘结到保护性基底,其中腔密封在粘结的基底和保护性基底之间;以及沿着与沟槽相交的线切割粘结的基底和保护性基底。沟槽可被构造成将外壁的一部分与划片刀隔离。
对本领域技术人员而言,通过审阅以下附图和详细说明,其他系统、方法、特征和/或优点将会或可以变得显而易见。旨在将所有此类附加系统、方法、特征和/或优点包括在此说明内并且它们受到所附权利要求书的保护。
附图说明
附图中的部件不一定相对于彼此成比例。在所有几个视图中相同的附图标记表示对应的部件。
图1是示例MEMS力传感器的等距视图。
图2A是图1的示例MEMS力传感器的侧视图。
图2B是图1的示例MEMS力传感器沿着线A-A’截取的剖视图。
图3是具有2×2传感器阵列的晶圆部分的顶视图。
图4是示出MEMS力传感器灵敏度对壁厚度的图。
具体实施方式
除非另有定义,否则本文所用的所有技术和科学术语的含义与本领域普通技术人员通常理解的含义相同。与本文所述类似或等同的方法和材料可用于本公开的实践或测试。如本说明书和所附权利要求中所使用的,单数形式“一个”、“一种”、“所述”包括复数指代,除非上下文另有明确说明。本文所用的术语“包含”及其变型形式与术语“包括”及其变型形式同义使用,并且为开放、非限制性术语。本文所用的术语“任选的”或“任选地”是指随后描述的特征、事件或情况可发生或可不发生,并且该描述包括所述特征、事件或情况发生的实例和不发生的实例。虽然将针对示例MEMS力传感器描述具体实施,但对于本领域技术人员而言将变得显而易见的是具体实施并不限于此。
现在参考图1-3,描述了示例MEMS力传感器100。MEMS力传感器100可包括盖110和粘结至盖110的传感器150。盖110被构造成接收施加的力该力被传输至传感器150。盖110可任选地为玻璃(例如硼硅酸盐玻璃)间隔件或硅间隔件。传感器150可任选地为硅传感器。任选地,传感器150(以及其组件,例如凸出部、一个或多个柔性感测元件等)为单个连续材料片,即传感器150为单片式。应当理解,本公开设想盖110和/或传感器150可由上述材料之外的材料制备,上述这些材料是作为示例提供。
MEMS力传感器100可限定中心151以及周边边缘153。中心151布置在MEMS力传感器100的中心区域中,并且周边边缘153与中心151间隔开,并沿着MEMS力传感器100的外边缘布置。在本文所述的具体实施中,盖110和传感器150可在盖110和传感器150之间以及邻近传感器150的周边边缘153的一个或多个点处被粘结。例如,盖110和传感器150可在外壁(例如外壁156)和/或传感器150的凸出部(例如凸出部160)的一个或多个点或表面处粘结到一起。换句话讲,盖110和传感器150之间的一个或多个粘结区域布置在MEMS力传感器100的外部部分附近,而不是在MEMS力传感器100的中心部分附近。2013年6月21日提交的授予Brosh的名称为“Ruggedized MEMS Force Die”(加固的MEMS力裸片)的美国专利申请公布2013/0341741以及2013年6月21日提交的授予Brosh的名称为“Wafer Level MEMS Force Dies”(晶圆级MEMS力裸片)的美国专利申请公布2013/0341742描述了示例MEMS力传感器,其中盖和传感器粘结在传感器的周边或外部区域,所述专利申请的公开内容全文以引用方式并入本文。本公开设想盖110和传感器150可使用本领域中已知的技术粘结,包括但不限于硅融合粘结、阳极粘结、玻璃熔块、热压缩和低共熔粘结。
传感器150可包括沟槽152(例如容差沟槽)以及形成在其中的腔154。沟槽152和腔154可任选地通过蚀刻传感器150的表面形成。任选地,沟槽152和腔154可在制造过程期间以相同的蚀刻步骤形成。另选地,沟槽152和腔154可在制造过程期间以不同的蚀刻步骤形成。任选地,传感器150中的沟槽152的深度152A以及传感器150中的腔154的深度154A可大致相等(例如,如图2B中所示)。另选地,传感器150中的沟槽152和腔154的相应深度可能不相等。应当理解,沟槽152以及腔154的相应深度是指各自延伸到传感器150中有多深(例如在制造过程期间有多少传感器材料被移除)。
沟槽154可沿着传感器150的周边边缘153的至少一部分形成(例如,如图3中所示)。如图3的虚线框中所示,外壁156的至少一部分的厚度156A可任选地由沟槽152的尺寸(例如宽度)确定。具体地讲,沟槽152的尺寸或宽度由图3中的箭头152A示出。如图3中所示,沟槽布置在晶圆上的相邻传感器150之间并在切割期间提供容差。如果沟槽152的尺寸或宽度增大(例如变得更大或更宽),则厚度156A减小。相反地,如果沟槽152的尺寸或宽度减小(例如变得更小或更窄),则厚度156A增大。通过控制沟槽152的宽度,可精确地选择外壁156的部分的厚度156A,例如以提供预定水平的力测量灵敏度。外壁156的部分的厚度156A与MEMS力传感器的测量灵敏度相关。在图4中示出了MEMS力传感器灵敏度对壁厚度的示例图。如图4中所示,MEMS力传感器的测量灵敏度随着壁厚度(例如,图3中外壁156的部分的厚度156A)减小而改善。图4仅作为示例提供,示出了示例MEMS力传感器的灵敏度和壁厚度之间的一个示例关系,并非旨在限制。沟槽152将外壁156的部分与划片刀隔离。例如,当沿着图3的虚线切割晶圆(或粘结的传感器和保护性晶圆)时,划片刀切穿沟槽152。沟槽152可容纳划片刀。外壁156部分的厚度156A因此不受切割过程的(例如变化的、增大的、减小的等)划片刀和/或制造容差的影响。可根据划片刀的尺寸、切割过程的精度、所需的传感器外壁厚度、所需的MEMS力传感器的测量灵敏度和/或它们的组合,选择由图3中的箭头152A所示的沟槽152的尺寸或宽度。
腔154可任选地在传感器150中形成苜蓿叶形图案(例如,如图3中所示)。腔154可限定外壁156以及至少一个柔性感测元件158。任选地,腔154可限定多个外壁和/或多个柔性感测元件。2013年6月21日提交的授予Brosh的名称为“Ruggedized MEMS Force Die”(加固的MEMS力裸片)的美国专利申请公布2013/0341741以及2013年6月21日提交的授予Brosh的名称为“Wafer Level MEMS Force Dies”(晶圆级MEMS力裸片)的美国专利申请公布2013/0341742描述了具有多个柔性感测元件的示例MEMS力传感器,该专利申请的公开内容全文以引用方式并入本文。外壁156可布置在沟槽152和腔154之间(例如,如图3中的虚线框中所示)。任选地,腔154可限定例如从外壁156向内朝向传感器150的中心151延伸的凸出部160(例如突出部分)。如上所述,传感器150可在外壁156的一个或多个点或表面处粘结至盖110。另选地或除此之外,传感器150可在凸出部160的一个或多个点或表面处粘结至盖110。由此,一个或多个粘结的区域邻近传感器150的周边边缘153布置,而不是邻近传感器150的中心151布置。如上所述,2013年6月21日提交的授予Brosh的名称为“Ruggedized MEMSForce Die”(加固的MEMS力裸片)的美国专利申请公布2013/0341741以及2013年6月21日提交的授予Brosh的名称为“Wafer Level MEMS Force Dies”(晶圆级MEMS力裸片)的美国专利申请公布2013/0341742描述了示例MEMS力传感器,其中盖和传感器粘结在传感器的周边或外部区域中,所述专利申请的公开内容全文以引用方式并入本文。这使一个或多个粘结的区域在盖110和传感器150之间占据更大的表面积百分比,得到强度和稳健度有所改善的MEMS力传感器。另外,当盖110和传感器150粘结到一起时,腔154可密封在盖110和传感器150之间。换句话讲,腔154(例如密封腔或从外部环境密封的腔)可限定由盖110和传感器150完全包封的体积,甚至是在切割了MEMS力传感器之后。在2015年1月13日提交的名称为“Miniaturized and Ruggedized Wafer Level MEMS Force Sensors”(微型化并加固的晶圆级MEMS力传感器)的WO 2015/106246中描述了示例密封的MEMS力传感器,该专利的公开内容全文以引用方式并入本文中。这与沟槽152不同,在切割之后不从外部环境密封沟槽。
传感器150还可包括形成在柔性感测元件158上的传感器元件(未示出)。例如,传感器元件可形成在柔性感测元件158上邻近外壁156的壁厚度得到精确控制的部分(例如在图3的虚线框内的柔性感测元件的一部分上)。另外,如下所述,传感器元件可形成在柔性感测元件158的底部表面上。任选地,可在每个柔性感测元件上形成多个传感器元件。传感器元件可响应于柔性感测元件158的挠曲而更改电特性(例如电阻、电容、电荷等)。例如,压阻式元件可沉积或植入在传感器150的柔性感测元件158的底部表面158A上。随着柔性感测元件158中产生应变(该应变与施加的力成比例),在压阻式元件上生成局部应变,使得压阻式元件根据其具体取向而经受压缩。随着压阻式元件压缩和拉紧,其电阻以相反的方式变化。因此,包括多个(例如四个)压阻式元件(例如相对于应变每个方向两个)的惠斯通电桥电路变得不平衡并跨正信号端子和负信号端子产生差分电压。该差分电压与施加在MEMS力传感器100的盖110上的力/>成正比。可通过连接至外部电路的电端子测量该差分电压。电端子可任选地为焊料凸块以允许倒装芯片组装。但是压阻式元件作为示例传感器元件提供,本公开设想传感器元件可为任何传感器元件(例如,包括但不限于压电或电容传感器),该传感器元件被构造成基于施加的力的大小或幅度在至少一个电特性(例如电阻、电量、电容等)上变化,并且可输出与施加的力的大小或幅度成比例的信号。
另选地或除此之外,MEMS力传感器100可包括形成在盖110或传感器150中的至少一者中的间隙162(例如空气间隙)。例如,间隙162可通过蚀刻传感器150的一部分而形成(例如,如图2B中的虚线所示)。另选地,间隙162可通过蚀刻盖110的一部分而形成。另选地,间隙162可通过蚀刻传感器150的一部分以及盖110的一部分形成。2013年6月21日提交的授予Brosh的名称为“Ruggedized MEMS Force Die”(加固的MEMS力裸片)的美国专利申请公布2013/0341741以及2013年6月21日提交的授予Brosh的名称为“Wafer Level MEMS ForceDies”(晶圆级MEMS力裸片)的美国专利申请公布2013/0341742描述了在MEMS力传感器的中心区域中提供有间隙的示例MEMS力传感器,该专利申请的公开内容全文以引用方式并入本文。任选地,间隙162的深度可被构造成限制柔性感测元件158的挠曲量。例如,间隙162的深度可为约500nm至约2μm。间隙162通过限制柔性感测元件158可挠曲的量来提供过载阻止,使得柔性感测元件不因施加过大的力而发生机械故障。
在下面描述了制造MEMS力传感器(例如图1-3的MEMS力传感器100)的示例方法。可提供硅晶圆(例如基底),该硅晶圆具有第一表面以及与第一表面相背对的第二表面。一个或多个传感器元件可形成在硅晶圆的第一表面上。可使用本领域中任何已知的技术形成传感器元件。例如在2013年7月3日提交的授予Campbell等人的名称为“Microelectromechanical Load Sensor and Methods of Manufacturing the Same”(微机电负载传感器及其制造方法)的美国专利9,032,818中描述了在硅晶圆的表面上形成传感器元件(例如,压阻式元件)的制造过程,该专利的公开内容全文以引用方式并入本文中。另选地或除此之外,一个或多个电迹线和/或一个或多个机电连接器可形成在硅晶圆的第一表面上。应当理解,迹线和/或连接器可用于以机械方式和/或电气方式将MEMS力传感器耦接至外部设备或电路。
可倒置硅晶圆以暴露第二表面,即硅晶圆的相背对表面。可在硅晶圆的第二表面上提供沟槽(例如图1-3的沟槽152)和/或腔(例如图1-3的腔154)。可使用本领域中的任何已知技术形成沟槽和/或腔,包括但不限于蚀刻技术。例如,在2013年7月3日提交的授予Campbell等人的名称为“Microelectromechanical Load Sensor and Methods ofManufacturing the Same”(微机电负载传感器及其制造方法)的美国专利9,032,818中描述了从硅晶圆的表面蚀刻特征部的制造过程,该专利的公开内容全文以引用方式并入本文中。如上所述,可在制造过程的相同或不同步骤期间形成沟槽和腔。另外,沟槽和腔的相应深度可任选地大致相同或者不同。
如上所述,腔可形成图案,该图案限定外壁(例如图2B和图3的外壁156)、至少一个柔性感测元件(例如,图2B和图3的柔性感测元件158)和/或至少一个凸出部(例如图3的凸出部160)。传感器元件可任选地形成在柔性感测元件的底部表面(例如,图2B的底部表面158A)上,即形成在硅晶圆的第一表面上。另外,沟槽可布置在硅晶圆上的传感器之间并在切割期间提供容差。应当理解,多个沟槽可如图3所示形成,即在相邻传感器之间形成。如上所述,可基于划片刀的尺寸、切割过程的精度、所需的传感器外壁厚度、MEMS力传感器的所需测量灵敏度和/或它们的组合,选择沟槽的尺寸或宽度。沟槽的尺寸或宽度由图3中的箭头152A示出。如果沟槽的尺寸或宽度增大(例如变得更大或更宽),则传感器外壁的厚度减小。相反地,如果沟槽的宽度减小(例如变得更小或更窄),则传感器外壁的厚度增大。通过控制沟槽的宽度,可精确地选择传感器外壁的部分的厚度,例如以提供预定水平的力测量灵敏度。
硅晶圆可粘结至保护性晶圆(例如,硅间隔件或其它材料)。应当理解,保护性晶圆形成图1-2B的盖110。硅晶圆以及保护性晶圆可使用本领域中任何已知的技术粘结,包括但不限于硅融合粘结、阳极粘结、玻璃熔块、热压缩和低共熔粘结。如上所述,一个或多个粘结区域靠近传感器的外部部分布置,而不是靠近传感器的中心部分布置。在粘结硅晶圆和保护性晶圆之后,切割粘结的晶圆。如上所述,每个沟槽将每个MEMS力传感器的外壁与划片刀隔离。例如,当沿着图3的虚线切割晶圆时,划片刀切穿沟槽。沟槽可容纳划片刀。传感器的外壁的部分的厚度因此不受切割过程的(例如变化的、增大的、减小的等)划片刀和/或制造容差的影响。
任选地,间隙可形成在硅晶圆或保护性晶圆中的至少一者中。如上所述,间隙可形成在硅晶圆和保护性晶圆中或硅晶圆或保护性晶圆中的至少一者中。可使用本领域中的任何已知技术形成间隙,包括但不限于蚀刻技术。例如在2013年7月3日提交的授予Campbell等人的名称为“Microelectromechanical Load Sensor and Methods of Manufacturingthe Same”(微机电负载传感器及其制造方法)的美国专利9,032,818中描述了从晶圆蚀刻特征部的制造过程,该专利的公开内容全文以引用方式并入本文中。间隙的深度被构造成限制一个或多个柔性感测元件的挠曲量,以例如通过防止一个或多个柔性感测元件由于过度施加的力而发生机械故障来提供过载保护。另外,如上所述,可将间隙布置成与传感器的中心重叠。
尽管用结构特征和/或方法动作专用的语言描述了本主题,但应当理解,所附权利要求书中定义的主题不必限于上述具体特征或动作。相反,上述具体特征和动作是作为实现权利要求的示例形式而公开的。
Claims (20)
1.一种微机电MEMS力传感器,包括:
盖,所述盖用于接收施加的力;
传感器,所述传感器粘结至所述盖,所述传感器包括:
沿着所述传感器的周边边缘的至少一部分形成在所述传感器中的沟槽,和
形成在所述传感器中的腔,所述腔限定外壁和至少一个柔性感测元件,所述外壁布置在所述沟槽和所述腔之间,并且所述腔密封在所述盖和所述传感器之间;和
传感器元件,所述传感器元件形成在所述至少一个柔性感测元件上,其中所述传感器元件被配置为响应于所述至少一个柔性感测元件的挠曲而更改电特性。
2.根据权利要求1所述的MEMS力传感器,其中所述外壁的至少一部分的厚度由所述沟槽的尺寸确定。
3.根据权利要求2所述的MEMS力传感器,其中所述外壁的所述部分的厚度被构造成提供预定水平的力测量灵敏度。
4.根据权利要求1所述的MEMS力传感器,其中所述沟槽被构造成将所述外壁的所述部分与划片刀隔离。
5.根据权利要求1所述的MEMS力传感器,其中所述沟槽和所述腔从所述传感器蚀刻,并且其中所述沟槽的深度和所述腔的深度大致相等。
6.根据权利要求1所述的MEMS力传感器,其中所述传感器和所述盖沿着所述外壁的至少一部分粘结。
7.根据权利要求1所述的MEMS力传感器,其中所述腔还限定从所述外壁朝向所述传感器的中心向内延伸的至少一个凸出部。
8.根据权利要求7所述的MEMS力传感器,其中所述传感器和所述盖沿着所述至少一个凸出部的至少一部分粘结。
9.根据权利要求1所述的MEMS力传感器,还包括形成在所述盖或所述传感器中的至少一者中的间隙,其中所述间隙的深度被构造成限制所述至少一个柔性感测元件的挠曲量。
10.根据权利要求9所述的MEMS力传感器,其中所述传感器包括中心和所述周边边缘,并且其中所述间隙与所述传感器的所述中心重叠。
11.根据权利要求1所述的MEMS力传感器,其中所述腔包括完全包封在所述盖和所述传感器之间的体积。
12.根据权利要求1所述的MEMS力传感器,其中所述腔还限定多个柔性感测元件。
13.一种用于制造微机电MEMS力传感器的方法,包括:
提供具有第一表面以及与所述第一表面相背对的第二表面的基底;
在所述基底的所述第一表面上形成至少一个传感器元件;
倒置所述基底以暴露所述基底的所述第二表面;
蚀刻所述基底的所述第二表面以形成腔,其中所述腔限定外壁以及至少一个柔性感测元件;
蚀刻所述基底的所述第二表面以形成沟槽;
将所述基底的所述第二表面粘结至保护性基底,其中所述腔密封在粘结的基底和保护性基底之间;以及
沿着与所述沟槽相交的线切割粘结的基底和保护性基底,其中所述沟槽被构造成将所述外壁的一部分与划片刀隔离,
其中所述沟槽沿着所述MEMS力传感器的周边边缘的一部分形成在所述MEMS力传感器中,其中所述外壁布置在所述沟槽和所述腔之间,其中所述至少一个传感器元件布置在所述至少一个柔性感测元件上,并且其中所述至少一个传感器元件被配置为响应于所述至少一个柔性感测元件的挠曲而更改电特性。
14.根据权利要求13所述的方法,其中蚀刻所述基底的所述第二表面以形成腔以及蚀刻所述基底的所述第二表面以形成沟槽在所述制造过程的相同或不同步骤期间执行。
15.根据权利要求13所述的方法,其中所述外壁的至少一部分的厚度由所述沟槽的尺寸确定。
16.根据权利要求15所述的方法,其中所述外壁的所述部分的厚度被构造成提供预定水平的力测量灵敏度。
17.根据权利要求15所述的方法,其中所述外壁的所述部分的厚度随着所述沟槽的尺寸减小而增大。
18.根据权利要求15所述的方法,还包括基于所述划片刀的尺寸、所述切割过程的精度、所述外壁的所需厚度、所述MEMS力传感器的所需测量灵敏度或它们的组合来选择所述沟槽的尺寸。
19.根据权利要求13所述的方法,还包括在所述基底或所述保护性基底中的至少一者中蚀刻间隙,其中所述间隙的深度被构造成限制所述至少一个柔性感测元件的挠曲量。
20.根据权利要求13所述的方法,其中所述腔还限定从所述外壁延伸的至少一个凸出部。
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CN1796952A (zh) * | 2004-12-24 | 2006-07-05 | 清华大学 | 一种基于微纳组合结构的力传感器 |
CN102162756A (zh) * | 2010-12-29 | 2011-08-24 | 厦门大学 | 一种全对称硅微谐振式压力传感器 |
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US20160363490A1 (en) | 2016-12-15 |
CN107848788A (zh) | 2018-03-27 |
CN117486166A (zh) | 2024-02-02 |
US10466119B2 (en) | 2019-11-05 |
WO2016201235A1 (en) | 2016-12-15 |
EP3307671B1 (en) | 2022-06-15 |
EP3307671A1 (en) | 2018-04-18 |
EP3307671A4 (en) | 2019-01-30 |
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