CN111448446B - 在mems力传感器中的应变传递堆叠 - Google Patents
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- 239000010410 layer Substances 0.000 claims abstract description 162
- 239000011241 protective layer Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 description 24
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- 239000007787 solid Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- B81B7/007—Interconnections between the MEMS and external electrical signals
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- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
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- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
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Abstract
本文描述了一种加固型微机电(“MEMS”)力传感器,其包括传感器管芯和应变传递层。MEMS力传感器采用压阻或压电应变计用于应变感测,其中应变通过应变传递层传递,所述应变传递层设置在所述传感器管芯的顶侧或底侧上。在顶侧应变传递层的情况下,MEMS力传感器包括机械锚。在底侧应变传递层的情况下,保护层添加在传感器管芯的顶侧上以用于结合线保护。
Description
相关申请的交叉引用
本申请要求2017年7月19日提交的名称为“STRAIN TRANSFER STACKING IN AMEMS FORCE SENSOR(在MEMS力传感器中的应变传递堆叠)”的美国临时专利申请第62/534,287号的权益,其公开内容以全文引用的方式明确地并入本文中。
技术领域
本公开涉及具有应变传递层的微机电(“MEMS”)力传感器。
背景技术
力感测应用需要介质将力或应变传递到感测元件。在常规系统中,传递介质通常在组装机构上实施但不在传感器自身上实施。当在组装机构上实施传递介质时,在传递介质与传感器之间总是存在对准容差。为了更好的准确性和更紧密的容差,需要将传递介质实施到传感器上。
发明内容
本公开涉及一种包括应变传递层的MEMS力传感器。根据本文中描述的一种实施方式,应变传递层设置在传感器管芯(die)的顶表面上,且所述传感器管芯由在所述传感器管芯的底表面处的机械锚支撑。所述感测元件可以是压阻式或压电式,并且可以电耦合到机械锚。
根据另一种实施方式,所述应变传递层设置在所述传感器管芯的底表面上,且保护层设置于所述传感器管芯的顶表面上。在此解决方案中,所述应变传递层还用作MEMS力传感器的机械支撑,同时MEMS力传感器安装到力敏表面。另外,感测元件可以是压阻式或压电式。
本文中描述了另一示例性MEMS力传感器。所述MEMS力传感器可包括被配置成接收所施加的力的传感器管芯,其中所述传感器管芯限定顶侧和与所述顶侧相对的底侧。所述MEMS力传感器还可包括布置在所述传感器管芯上的至少一个应变感测元件、布置在所述传感器管芯的顶侧上的应变传递层,以及布置在所述传感器管芯的底侧上的至少一个机械锚。所述至少一个应变感测元件可被配置成将应变转换成与应变成比例的模拟电信号。所述应变传递层可被配置成将应变传递到所述传感器管芯。
替代地或另外,所述至少一个机械锚可被配置成直接附接到外表面。这允许应变适当地传递到所述传感器管芯。
替代地或另外,所述至少一个应变感测元件可至少部分地与所述至少一个机械锚重叠。
替代地或另外,所述至少一个机械锚和所述至少一个应变感测元件可电耦合。
替代地或另外,所述应变传递层可完全在所述传感器管芯的顶表面上方延伸并且包裹在所述传感器管芯的边缘周围。
替代地或另外,所述应变传递层可与所述传感器管芯的顶表面共同延伸。
替代地或另外,所述应变传递层可仅部分地在所述传感器管芯的顶表面上方延伸。
替代地或另外,所述应变传递层可由比硅更柔软的材料形成。替代地,所述应变传递层可由比硅更坚硬的材料形成。
替代地或另外,所述至少一个应变感测元件可由压阻材料或压电材料形成。
本文中描述了另一示例性MEMS力传感器。所述MEMS力传感器可包括被配置成接收所施加的力的传感器管芯,其中所述传感器管芯限定顶侧和与所述顶侧相对的底侧。所述MEMS力传感器还可包括布置在所述传感器管芯上的至少一个应变感测元件、布置在所述传感器管芯的底侧上的应变传递层,以及布置在所述传感器管芯的顶侧上的保护层。所述至少一个应变感测元件可被配置成将应变转换成与应变成比例的模拟电信号。所述应变传递层可被配置成将应变传递到所述传感器管芯。
替代地或另外,所述MEMS力传感器可包括布置在所述应变传递层上的电连接器。所述至少一个应变感测元件和所述电连接器可电耦合。
替代地或另外,所述MEMS力传感器可包括结合线。保护层可覆盖并保护所述结合线。
在研究以下图式和详细描述时,其它系统、方法、特征和/或优点对于本领域技术人员而言将是或者可变得显而易见的。旨在将所有此类附加系统、方法、特征和/或优点都包括在本说明书内且受所附权利要求书的保护。
附图说明
附图中的部件不一定相对于彼此成比例。附图标记指示对应部分。在参考附图的详细描述中,这些和其它特征将变得更加明显,图中:
图1是根据本文中所描述的实施方式的MEMS力传感器的横截面图。MEMS力传感器包括压阻感测元件,所述压阻感测元件具有设置在传感器管芯的底侧上的机械锚和设置在传感器管芯的顶侧上的应变传递层。应变传递层大于传感器管芯。
图2是根据本文中描述的实施方式的另一MEMS力传感器的横截面图。MEMS力传感器包括压阻感测元件,所述压阻感测元件具有设置在传感器管芯的底侧上的机械锚和设置在传感器管芯的顶侧上的应变传递层。应变传递层与传感器管芯大小相同。
图3是根据本文中描述的实施方式的另一MEMS力传感器的横截面图。MEMS力传感器包括压阻感测元件,所述压阻感测元件具有设置在传感器管芯的底侧上的机械锚和设置在传感器管芯的顶侧上的应变传递层。应变传递层小于传感器管芯。
图4是根据本文中描述的实施方式的另一MEMS力传感器的横截面图。MEMS力传感器包括压电感测元件,所述压电感测元件具有设置在传感器管芯的底侧上的机械锚和设置在传感器管芯的顶侧上的应变传递层。应变传递层大于传感器管芯。
图5是根据本文中描述的实施方式的另一MEMS力传感器的横截面图。MEMS力传感器包括压电感测元件,所述压电感测元件具有设置在传感器管芯的底侧上的机械锚和设置在传感器管芯的顶侧上的应变传递层。应变传递层与传感器管芯大小相同。
图6是根据本文中描述的实施方式的另一MEMS力传感器的横截面图。MEMS力传感器包括压电感测元件,所述压电感测元件具有设置在传感器管芯的底侧上的机械锚和设置在传感器管芯的顶侧上的应变传递层。应变传递层小于传感器管芯。
图7是根据本文中描述的实施方式的另一MEMS力传感器的横截面图。MEMS力传感器包括压阻感测元件,所述压阻感测元件具有设置在传感器管芯的底侧上的应变传递层和在传感器管芯的顶侧上的保护层。
图8是根据本文中描述的实施方式的另一MEMS力传感器的横截面图。MEMS力传感器包括压电感测元件,所述压电感测元件具有设置在传感器管芯的底侧上的应变传递层和在传感器管芯的顶侧上的保护层。
具体实施方式
通过参考以下详细描述、示例、图式及其之前和以下描述,可更容易地理解本公开。然而,在公开并描述本发明的装置、系统和/或方法之前,应当理解,除非另外指出,否则本公开不限于所公开的特定装置、系统和/或方法,因此当然可以变化。还要理解,本文所用的术语仅用于描述特定方面的目的,而不旨在是限制性的。
提供以下描述作为实施教导。为此,相关领域的技术人员将了解并认识到可以进行许多改变,同时仍获得有益的结果。还将显而易见的是,可通过选择一些特征而不利用其它特征来获得一些所期望的益处。因此,在本领域中工作的人员将认识到,许多修改和调适是可能的,并且在某些情况下甚至可能是期望的,并且由本公开考虑。因此,提供以下描述是为了说明原理而不是对其进行限制。
除非上下文另外明确规定,否则如全文中使用的单数形式“一个”、“一种”和“该/所述”包括复数指代物。因此,举例来说,除非上下文另外规定,否则对“感测元件”的引用可包括两个或更多个此类感测元件。
本文使用的术语“包含”及其变型与术语“包括”及其变型同义使用,并且是开放的非限制性术语。
范围在本文中可以表达为从“约”一个特定值和/或到“约”另一特定值。当表达此类范围时,另一方面包括从一个特定值和/或到另一特定值。类似地,当数值通过使用先行词“约”表达为近似值时,应理解,特定值形成另一方面。将进一步理解,每个范围的端点在相对于另一端点和独立于另一端点方面都是有效的。
如本文所用的,术语“任选的”或“任选地”意味着随后描述的事件或情况可以发生或可以不发生,并且所述描述包括所述事件或情况发生的例子和所述事件或情况不发生的例子。
现在参考图1,描述了微机电系统(“MEMS”)力传感器101,用于测量施加到其至少一部分的力。MEMS力传感器101可包括传感器管芯102,所述传感器管芯限定相对侧102A和102B。例如,顶侧和底侧分别标记为102A和102B。如下文所描述,应变传递层108可设置在传感器管芯具102的顶侧102A上。如图1中所示,应变传递层108布置在传感器管芯102的顶表面上(例如,在顶表面之上分层形成,沉积在顶表面上,形成于顶表面上,与顶表面接触等)。另外,机械锚107可设置在传感器管芯102的底侧102B上。换言之,机械锚107可布置在传感器管芯102相对于应变传递层108的相对侧上。机械锚108可用于将MEMS力传感器101安装到外表面,例如力敏装置的一部分和/或另一电路衬底。外表面可为多层堆叠结构的部分,且可任选地将MEMS力传感器101的电耦合提供到其它电子部件。应当理解,图1中示出的机械锚107的数目(即,两个)仅作为实例提供。本公开设想,MEMS力传感器101可包括比图1中所示的更多或更少的机械锚。
传感器管芯102还可包括介电层103、半导体层104、压阻感测元件105和金属层106。金属层106可以是导电材料(例如,铝、金、银等),半导体层104可以是硅或其它半导体材料(例如,砷化镓(GaAs)或碳化硅(SiC)),且介电层103可以是介电材料。如图1所示,压阻感测元件105布置在半导体材料104上,并且介电层103设置在其上布置压阻感测元件105的半导体材料104的表面上方。例如,压阻感测元件105可以设置在传感器管芯102的底侧102B上,即,压阻感测元件105可以布置在传感器管芯102相对于应变传递层108的相对侧上。另外,压阻感测元件105可以被扩散、沉积或注入半导体层104的表面上。应当理解,单个压阻感测元件仅作为实例示于图1中。本公开设想MEMS力传感器101可包括多个压阻感测元件。
压阻感测元件105可响应于传感器管芯102的一部分的偏转而改变电特性(即,电阻)。电特性的变化可被检测为模拟电信号(例如,电压变化)。例如,当在传感器管芯102中诱发与施加到MEMS力传感器101的力“F”成比例的应变时,在压阻感测元件105上产生局部应变,使得根据其具体取向压阻感测元件105经历压缩或张力。当压阻感测元件105压缩和拉紧时,其电阻率以相反的方式变化。因此,包括多个(例如,四个)压阻感测元件(例如,相对于应变每个取向两个)的Wheatstone(惠斯通)桥电路变得不平衡,并且在正信号端子和负信号端子之间产生差分电压。此差分电压与MEMS力传感器101上所施加的力“F”成正比。使用压阻感测元件的示例性MEMS力传感器在以下文献中描述:2016年11月8日颁发的名称为“加固型MEMS力管芯(Ruggedized MEMS Force Die)”的美国专利号9,487,388,2016年11月15日颁发的名称为“晶片级MEMS力管芯(Wafer Level MEMS Force Dies)”的美国专利号9,493,342,2018年2月27日颁发的名称为“小型化的加固型晶片级MEMS力传感器(Miniaturized and ruggedized wafer level mems force sensors)”的美国专利号9,902,611以及Campbell等人于2016年6月10日提交的名称为“具有公差沟道的加固型晶片级MEMS力传感器(Ruggedized wafer level mems force sensor with a tolerancetrench)”的美国专利申请公开号2016/0363490,上述专利的公开内容通过全文引用的方式并入本文中。
如上文所描述,机械锚107可用于将MEMS力传感器101附接到外表面,例如另一电路衬底。例如,机械锚107可被配置成直接附接到外表面。本公开设想,外表面是充当不变形的充分机械接地的固体表面。使用机械锚107将MEMS力传感器101附接到此固体表面允许应变适当地传递到传感器管芯102。在一些实施方式中,压阻感测元件105可以电耦合到机械锚107。任选地,压阻感测元件105和机械锚107可以彼此重叠,使得可以使用导电通孔将它们电耦合。在这种实施方式中,机械锚107可以是导电材料,例如金属。例如,压阻感测元件105可以电耦合到金属层106,所述金属层可以电耦合到机械锚107。以此方式,上文描述的差分电压信号可从传感器管芯102传输到电路以供进一步处理。
如图1中所描绘,应变传递层108可大于传感器管芯102。例如,在图1中,应变传递层108完全在传感器管芯102的顶表面上方延伸,并且还包裹在传感器管芯102的边缘周围。在此配置中,应变传递层108可保护传感器管芯102(例如,由例如Si的脆性半导体材料制成)免受冲击造成的破坏。应变传递层108还可提高MEMS力传感器101的灵敏度。在一些实施方式中,应变传递层108由比半导体层104材料(例如,硅)更柔软的材料组成,例如模制化合物、塑料或胶带。例如,应变传递层108的材料硬度(例如,抵抗塑性变形的能力)可小于半导体层104的材料硬度。在其他实施方式中,应变传递层108由比半导体层104材料(例如,硅)更坚硬的材料组成,例如镍、钛或钢。例如,应变传递层108的材料硬度(例如,抵抗塑性变形的能力)可大于半导体层104的材料硬度。替代地或另外,在一些实施方式中,应变感测元件(例如,图1-3和图7中的压阻感测元件105)由例如单晶硅、多晶硅或砷化镓的压阻材料组成。在其他实施方式中,应变感测元件(例如,图4-6和图8中的压电感测元件405)由例如氮化铝、氧化锌或锆钛酸铅(PZT)的压电材料组成。应理解,应变传递层108和/或应变感测元件的上述材料仅作为实例提供。本公开设想,应变传递层和/或应变感测元件可以由其它材料制成。通过包括应变传递层作为MEMS力传感器101的一部分,应变通过应变传递层108传递到MEMS力传感器101,所述MEMS力传感器可安装到固体表面。
现在参考图2,描述了微机电系统(“MEMS”)力传感器201,用于测量施加到其至少一部分的力。MEMS力传感器201可包括传感器管芯102和应变传递层208。传感器管芯102可限定相对侧102A和102B。传感器管芯102还可包括介电层103、半导体层104、压阻感测元件105和金属层106。另外,MEMS力传感器201可包括机械锚107。MEMS力传感器201的这些特征类似于上文关于图1所描述的那些特征,且因此未在下文进一步详细描述。如图2所描绘,应变传递层208的尺寸可以与传感器管芯102相等。例如,应变传递层208与传感器管芯102的顶表面共同延伸。换言之,应变传递层208完全覆盖传感器管芯102的顶表面。然而,与图1中所示的应变传递层不同,应变传递层208不包裹在传感器管芯102的边缘周围。在此配置中,应变传递层208可保护传感器管芯102的顶侧102A免受冲击造成的破坏。应变传递层108还可提高MEMS力传感器201的灵敏度。通过包括应变传递层作为MEMS力传感器201的一部分,应变通过应变传递层208传递到MEMS力传感器201,所述MEMS力传感器可安装到固体表面。
现在参考图3,描述了微机电系统(“MEMS”)力传感器301,用于测量施加到其至少一部分的力。MEMS力传感器301可包括传感器管芯102和应变传递层308。传感器管芯102可限定相对侧102A和102B。传感器管芯102还可包括介电层103、半导体层104、压阻感测元件105和金属层106。另外,MEMS力传感器301可包括机械锚107。MEMS力传感器301的这些特征类似于上文关于图1所描述的那些特征,且因此未在下文进一步详细描述。如图3中所描绘,应变传递层308可小于传感器管芯102。例如,应变传递层308仅部分地在传感器管芯102的顶表面上方延伸。与图2中所示的应变传递层不同,应变传递层308不完全覆盖传感器管芯102的顶表面。在此配置中,应变传递层308可以向传感器管芯102提供同心负载。应变传递层308还可提高MEMS力传感器301的灵敏度。通过包括应变传递层作为MEMS力传感器301的一部分,应变通过应变传递层308传递到MEMS力传感器301,所述MEMS力传感器可安装到固体表面。
现在参考图4,描述了微机电系统(“MEMS”)力传感器401,用于测量施加到其至少一部分的力。除了感测元件之外,MEMS力传感器401具有与关于图1描述的MEMS力传感器相同的特征。具体地,MEMS力传感器401可包括传感器管芯102和应变传递层108。传感器管芯102可限定相对侧102A和102B。传感器管芯102还可包括介电层103、半导体层104、顶部电极409、压电感测元件405和金属层106。金属层106充当底部电极。另外,MEMS力传感器401可包括机械锚107。如图4中所描绘,应变传递层108可大于传感器管芯102。例如,在图4中,应变传递层108完全在传感器管芯102的顶表面上方延伸,并且还包裹在传感器管芯102的边缘周围。通过包括应变传递层作为MEMS力传感器401的一部分,应变通过应变传递层108传递到MEMS力传感器401,所述MEMS力传感器可安装到固体表面。
如图4中所示,介电层103设置在半导体材料104的表面上方,并且压电感测元件405布置介电层103上。例如,压电感测元件405可设置在传感器管芯102的底侧102B上,即,压电感测元件405可布置在传感器管芯具102相对于应变传递层108的相对侧上。应理解,单个压电感测元件仅作为实例在图4中示出。本公开设想MEMS力传感器401可包括多个压电感测元件。另外,本公开设想压电感测元件405可沉积在介电层103的表面上。布置在如上文所描述的相对电极之间的压电感测元件405可响应于传感器管芯102的一部分的偏转而改变电特性(即,电荷)。例如,在传感器管芯102中感应到与施加到MEMS力传感器401的力“F”成比例的应变时,压电感测元件405改变电荷。因此,电特性的变化可以被检测为顶部电极409和底部电极106处的模拟电信号(例如,电压变化)。本公开设想电压的变化可与施加到MEMS力传感器401的“F”的量相关。
现在参考图5,描述了微机电系统(“MEMS”)力传感器501,用于测量施加到其至少一部分的力。MEMS力传感器501可包括传感器管芯102和应变传递层508。传感器管芯102可限定相对侧102A和102B。传感器管芯102还可包括介电层103、半导体层104、顶部电极409、压电感测元件405和金属层106。金属层106用作压电感测元件405的底部电极。另外,MEMS力传感器501可包括机械锚107。MEMS力传感器501的这些特征类似于上文关于图4所描述的那些特征,且因此未在下文进一步详细描述。如图5所描绘,应变传递层508的尺寸可以与传感器管芯102相等。例如,应变传递层508与传感器管芯102的顶表面共同延伸。换言之,应变传递层508完全覆盖传感器管芯102的顶表面。然而,与图4中所示的应变传递层不同,应变传递层508不包裹在传感器管芯102的边缘周围。通过包括应变传递层作为MEMS力传感器501的一部分,应变通过应变传递层508传递到MEMS力传感器501,所述MEMS力传感器可安装到固体表面。
现在参考图6,描述了微机电系统(“MEMS”)力传感器601,用于测量施加到其至少一部分的力。MEMS力传感器601可包括传感器管芯102和应变传递层608。传感器管芯102可限定相对侧102A和102B。传感器管芯102还可包括介电层103、半导体层104、顶部电极409、压电感测元件405和金属层106。金属层106用作压电感测元件405的底部电极。另外,MEMS力传感器601可包括机械锚107。MEMS力传感器601的这些特征类似于上文关于图4所描述的那些特征,且因此未在下文进一步详细描述。如图6中所描绘,应变传递层608可小于传感器管芯102。例如,应变传递层608仅部分地在传感器管芯102的顶表面上方延伸。与图5中所示的应变传递层不同,应变传递层608不完全覆盖传感器管芯102的顶表面。通过包括应变传递层作为MEMS力传感器601的一部分,应变通过应变传递层608传递到MEMS力传感器601,所述MEMS力传感器可安装到固体表面。
现在参考图7,描述了微机电系统(“MEMS”)力传感器701,用于测量施加到其至少一部分的力。MEMS力传感器701可包括传感器管芯702,所述传感器管芯限定相对侧702A和702B。例如,顶侧和底侧分别标记为702A和702B。如下文所描述,应变传递层709可设置在传感器管芯具102的底侧702B上。如图7中所示,应变传递层709布置在传感器管芯702的底表面上(例如,分层形成于底表面上分层形成,沉积在底表面上,形成于底表面上,与底表面接触等)。另外,保护层708可设置在传感器管芯702的顶侧702A上。如图7所示,保护层708布置在传感器管芯702的顶表面上(例如,分层形成于底表面上分层形成、沉积于底表面上、形成于底表面上、与底表面接触等)。换言之,保护层708可布置在传感器管芯具702相对于应变传递层709的相对侧上。
传感器管芯702还可包括半导体层703、介电层704、金属层705和压阻感测元件706。金属层705可以是导电材料(例如,铝、金、银等),半导体层703可以是硅或其他半导体材料,介电层704可以是介电材料。如图7所示,压阻感测元件706布置在半导体材料703上,并且介电层704设置在其上布置压阻感测元件706的半导体材料703的表面上方。压阻感测元件706可设置在传感器管芯702的顶侧702A上,即,压阻感测元件706可以布置在传感器管芯具702相对于应变传递层709的相对侧上。应当理解,单个压阻感测元件仅作为实例示于图7中。本公开设想MEMS力传感器701可包括多个压阻感测元件。另外,本公开设想,压阻感测元件706可以被扩散、沉积或注入半导体层703的表面上。上文描述了压阻感测元件的功能。
如图7所示,保护层708覆盖结合线707并保护传感器管芯702的顶表面。保护层708可由树脂、环氧树脂、塑料或可模制的其它材料形成。结合线707可为导电材料,例如金属。在一些实施方式中,压阻感测元件706可以电耦合到金属层705,所述金属层可以通过结合线707电耦合到电连接器710。如图7中所示,电连接器710可布置在应变传递层709上。在一些实施方式中,电连接器710可以是设置在应变传递层709上的金属框架。因此,上文描述的差分电压信号可从传感器管芯702传输到电路以供进一步处理。应理解,结合线707的数目(即,两个)和/或图7中示出的电连接器710的数目(即,两个)仅作为实例提供。本公开设想,MEMS力传感器701可包括比图7所示更多或更少的结合线和/或更多或更少的电连接器。另外,MEMS力传感器701可通过应变传递层709安装到力感测表面(例如,MEMS力传感器701外部的表面)。用于应变传递层的材料在上文描述。通过包括应变传递层作为MEMS力传感器701的一部分,在MEMS力传感器701安装到力感测表面时,应变通过应变传递层709传递到MEMS力传感器701。
现在参考图8,描述了微机电系统(“MEMS”)力传感器801,用于测量施加到其至少一部分的力。除了感测元件之外,MEMS力传感器801具有与关于图7描述的MEMS力传感器相同的特征。具体地,MEMS力传感器801可包括传感器管芯702和应变传递层709。传感器管芯702可限定相对侧702A和702B。传感器管芯102还可包括半导体层703、介电层704、金属层705、压电感测元件806和底部电极811。金属层705充当顶部电极。上文描述了压电感测元件的功能。另外,MEMS力传感器801可包括用于电耦合金属层705和电连接器710的结合线707,其允许来自传感器管芯702的差分电压信号传输到电路以供进一步处理。此外,MEMS力传感器801可包括保护层708,所述保护层覆盖结合线707并保护传感器管芯702的顶表面。通过包括应变传递层作为MEMS力传感器801的一部分,应变通过应变传递层709传递到MEMS力传感器801,同时MEMS力传感器801通过应变传递层709安装到力感测表面。
尽管已经以特定于结构特征和/或方法动作的语言描述了主题,但要理解,所附权利要求书中定义的主题不一定限于上文所描述的具体特征或动作。相反,上文描述的具体特征和动作是作为实施权利要求书的示例性形式而公开的。
Claims (15)
1.一种微机电MEMS力传感器,所述MEMS力传感器包括:
传感器管芯,所述传感器管芯被配置成接收所施加的力,其中,所述传感器管芯包括顶侧和与所述顶侧相对的底侧,
布置在所述传感器管芯上的至少一个应变感测元件,其中,所述至少一个应变感测元件被配置成将应变转换成与所述应变成比例的模拟电信号,
应变传递层,所述应变传递层布置在所述传感器管芯的所述顶侧上,其中所述应变传递层完全在所述传感器管芯的顶侧上方延伸并且包裹在所述传感器管芯的边缘周围,并且其中所述应变传递层被配置成将所述应变传递到所述传感器管芯,以及
至少一个机械锚,所述至少一个机械锚布置在所述传感器管芯的所述底侧上。
2.根据权利要求1所述的MEMS力传感器,其中,所述至少一个机械锚被配置成直接附接到外表面。
3.根据权利要求1或2所述的MEMS力传感器,其中,所述至少一个应变感测元件至少部分地与所述至少一个机械锚重叠。
4.根据权利要求1或2所述的MEMS力传感器,其中,所述至少一个机械锚和所述至少一个应变感测元件电耦合。
5.根据权利要求1或2所述的MEMS力传感器,其中,所述应变传递层由比硅更柔软的材料形成。
6.根据权利要求1或2所述的MEMS力传感器,其中,所述应变传递层由比硅更坚硬的材料形成。
7.根据权利要求1或2所述的MEMS力传感器,其中,所述至少一个应变感测元件由压阻材料形成。
8.根据权利要求1或2所述的MEMS力传感器,其中,所述至少一个应变感测元件由压电材料形成。
9.一种微机电MEMS力传感器,所述MEMS力传感器包括:
传感器管芯,所述传感器管芯被配置成接收所施加的力,其中,所述传感器管芯包括顶侧和与所述顶侧相对的底侧,
布置在所述传感器管芯上的至少一个应变感测元件,其中,所述至少一个应变感测元件被配置成将应变转换成与所述应变成比例的模拟电信号,
应变传递层,所述应变传递层设置在所述传感器管芯的所述底侧上,其中所述应变传递层被配置成将所述应变传递到所述传感器管芯,以及
设置在所述传感器管芯的所述顶侧上的保护层,其中所述保护层完全在所述传感器管芯的顶侧上方延伸并且包裹在所述传感器管芯的边缘周围。
10.根据权利要求9所述的MEMS力传感器,所述MEMS力传感器还包括布置在所述应变传递层上的电连接器,其中所述至少一个应变感测元件和所述电连接器电耦合。
11.根据权利要求9或10所述的MEMS力传感器,其中,所述至少一个应变感测元件由压阻材料形成。
12.根据权利要求9或10所述的MEMS力传感器,其中,所述至少一个应变感测元件由压电材料形成。
13.根据权利要求9或10所述的MEMS力传感器,所述MEMS力传感器还包括结合线,其中,所述保护层覆盖并且保护所述结合线。
14.根据权利要求9或10所述的MEMS力传感器,其中,所述应变传递层由比硅更柔软的材料形成。
15.根据权利要求9或10所述的MEMS力传感器,其中,所述应变传递层由比硅更坚硬的材料形成。
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2018
- 2018-07-19 EP EP18834426.1A patent/EP3655740A4/en active Pending
- 2018-07-19 US US16/632,795 patent/US11221263B2/en active Active
- 2018-07-19 CN CN201880060153.1A patent/CN111448446B/zh active Active
- 2018-07-19 WO PCT/US2018/042883 patent/WO2019018641A1/en unknown
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Publication number | Publication date |
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US11221263B2 (en) | 2022-01-11 |
US20200149983A1 (en) | 2020-05-14 |
EP3655740A4 (en) | 2021-07-14 |
CN111448446A (zh) | 2020-07-24 |
EP3655740A1 (en) | 2020-05-27 |
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