CN107785384B - 光电转换装置和照相机 - Google Patents

光电转换装置和照相机 Download PDF

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Publication number
CN107785384B
CN107785384B CN201710720826.9A CN201710720826A CN107785384B CN 107785384 B CN107785384 B CN 107785384B CN 201710720826 A CN201710720826 A CN 201710720826A CN 107785384 B CN107785384 B CN 107785384B
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China
Prior art keywords
photoelectric conversion
microlens array
conversion device
refractive index
layer
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Chinese (zh)
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CN107785384A (zh
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栗原政树
佐藤信彦
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201710720826.9A 2016-08-25 2017-08-22 光电转换装置和照相机 Active CN107785384B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016165072A JP6818468B2 (ja) 2016-08-25 2016-08-25 光電変換装置及びカメラ
JP2016-165072 2016-08-25

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CN107785384A CN107785384A (zh) 2018-03-09
CN107785384B true CN107785384B (zh) 2021-11-12

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JP (1) JP6818468B2 (enExample)
CN (1) CN107785384B (enExample)

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US11069729B2 (en) 2018-05-01 2021-07-20 Canon Kabushiki Kaisha Photoelectric conversion device, and equipment
JP2020031136A (ja) 2018-08-22 2020-02-27 キヤノン株式会社 撮像装置およびカメラ
JP7303698B2 (ja) * 2019-08-08 2023-07-05 キヤノン株式会社 半導体装置および機器
JP7562250B2 (ja) * 2019-12-04 2024-10-07 ソニーセミコンダクタソリューションズ株式会社 半導体素子および電子機器
CN211857087U (zh) * 2020-02-24 2020-11-03 宁波激智科技股份有限公司 一种减干涉准直膜
JP7503399B2 (ja) * 2020-03-16 2024-06-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及びその製造方法、並びに電子機器
US11257858B2 (en) * 2020-04-28 2022-02-22 Himax Technologies Limited Method of fabricating a sensor device
JP2022150746A (ja) * 2021-03-26 2022-10-07 ソニーセミコンダクタソリューションズ株式会社 半導体チップおよびその製造方法、半導体装置およびその製造方法、並びに電子機器

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US20180061879A1 (en) 2018-03-01
US10497732B2 (en) 2019-12-03
JP2018032792A (ja) 2018-03-01
JP6818468B2 (ja) 2021-01-20
CN107785384A (zh) 2018-03-09

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