JP6818468B2 - 光電変換装置及びカメラ - Google Patents

光電変換装置及びカメラ Download PDF

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Publication number
JP6818468B2
JP6818468B2 JP2016165072A JP2016165072A JP6818468B2 JP 6818468 B2 JP6818468 B2 JP 6818468B2 JP 2016165072 A JP2016165072 A JP 2016165072A JP 2016165072 A JP2016165072 A JP 2016165072A JP 6818468 B2 JP6818468 B2 JP 6818468B2
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JP
Japan
Prior art keywords
photoelectric conversion
conversion device
microlens array
layer
refractive index
Prior art date
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JP2016165072A
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English (en)
Japanese (ja)
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JP2018032792A5 (enExample
JP2018032792A (ja
Inventor
政樹 栗原
政樹 栗原
佐藤　信彦
信彦 佐藤
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2016165072A priority Critical patent/JP6818468B2/ja
Priority to US15/665,561 priority patent/US10497732B2/en
Priority to CN201710720826.9A priority patent/CN107785384B/zh
Publication of JP2018032792A publication Critical patent/JP2018032792A/ja
Publication of JP2018032792A5 publication Critical patent/JP2018032792A5/ja
Application granted granted Critical
Publication of JP6818468B2 publication Critical patent/JP6818468B2/ja
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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2016165072A 2016-08-25 2016-08-25 光電変換装置及びカメラ Active JP6818468B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016165072A JP6818468B2 (ja) 2016-08-25 2016-08-25 光電変換装置及びカメラ
US15/665,561 US10497732B2 (en) 2016-08-25 2017-08-01 Photoelectric conversion apparatus and camera
CN201710720826.9A CN107785384B (zh) 2016-08-25 2017-08-22 光电转换装置和照相机

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016165072A JP6818468B2 (ja) 2016-08-25 2016-08-25 光電変換装置及びカメラ

Publications (3)

Publication Number Publication Date
JP2018032792A JP2018032792A (ja) 2018-03-01
JP2018032792A5 JP2018032792A5 (enExample) 2019-10-03
JP6818468B2 true JP6818468B2 (ja) 2021-01-20

Family

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Family Applications (1)

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JP2016165072A Active JP6818468B2 (ja) 2016-08-25 2016-08-25 光電変換装置及びカメラ

Country Status (3)

Country Link
US (1) US10497732B2 (enExample)
JP (1) JP6818468B2 (enExample)
CN (1) CN107785384B (enExample)

Families Citing this family (8)

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US11069729B2 (en) 2018-05-01 2021-07-20 Canon Kabushiki Kaisha Photoelectric conversion device, and equipment
JP2020031136A (ja) 2018-08-22 2020-02-27 キヤノン株式会社 撮像装置およびカメラ
JP7303698B2 (ja) * 2019-08-08 2023-07-05 キヤノン株式会社 半導体装置および機器
JP7562250B2 (ja) * 2019-12-04 2024-10-07 ソニーセミコンダクタソリューションズ株式会社 半導体素子および電子機器
CN211857087U (zh) * 2020-02-24 2020-11-03 宁波激智科技股份有限公司 一种减干涉准直膜
JP7503399B2 (ja) * 2020-03-16 2024-06-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及びその製造方法、並びに電子機器
US11257858B2 (en) * 2020-04-28 2022-02-22 Himax Technologies Limited Method of fabricating a sensor device
JP2022150746A (ja) * 2021-03-26 2022-10-07 ソニーセミコンダクタソリューションズ株式会社 半導体チップおよびその製造方法、半導体装置およびその製造方法、並びに電子機器

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JPH09261519A (ja) * 1996-03-22 1997-10-03 Canon Inc 撮像装置
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JP6103947B2 (ja) 2013-01-16 2017-03-29 キヤノン株式会社 固体撮像装置及びその製造方法
CN105144385B (zh) * 2013-04-26 2018-06-29 奥林巴斯株式会社 摄像装置
JP6270335B2 (ja) * 2013-04-26 2018-01-31 オリンパス株式会社 撮像装置
KR102149772B1 (ko) * 2013-11-14 2020-08-31 삼성전자주식회사 이미지 센서 및 이를 제조하는 방법
JP6299406B2 (ja) 2013-12-19 2018-03-28 ソニー株式会社 半導体装置、半導体装置の製造方法、及び電子機器
JP6300029B2 (ja) * 2014-01-27 2018-03-28 ソニー株式会社 撮像素子、製造装置、製造方法
KR102055840B1 (ko) * 2014-02-20 2019-12-17 삼성전자 주식회사 이미지 센서 패키지
JP6315262B2 (ja) 2014-06-12 2018-04-25 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、及び、撮像装置
JP2016115706A (ja) 2014-12-11 2016-06-23 株式会社東芝 固体撮像装置および固体撮像装置の製造方法

Also Published As

Publication number Publication date
CN107785384B (zh) 2021-11-12
US20180061879A1 (en) 2018-03-01
US10497732B2 (en) 2019-12-03
JP2018032792A (ja) 2018-03-01
CN107785384A (zh) 2018-03-09

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