CN107195633A - 半导体存储装置及其制造方法 - Google Patents
半导体存储装置及其制造方法 Download PDFInfo
- Publication number
- CN107195633A CN107195633A CN201710084050.6A CN201710084050A CN107195633A CN 107195633 A CN107195633 A CN 107195633A CN 201710084050 A CN201710084050 A CN 201710084050A CN 107195633 A CN107195633 A CN 107195633A
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- component
- semiconductor
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- hole
- semiconductor storage
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- Granted
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 171
- 238000003860 storage Methods 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims description 48
- 239000010703 silicon Substances 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 238000003475 lamination Methods 0.000 claims description 9
- 238000003780 insertion Methods 0.000 claims description 8
- 230000037431 insertion Effects 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 239000004744 fabric Substances 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 89
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 42
- 239000012212 insulator Substances 0.000 description 21
- 238000000151 deposition Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 18
- 230000008021 deposition Effects 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 229910052814 silicon oxide Inorganic materials 0.000 description 15
- 230000004888 barrier function Effects 0.000 description 14
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 10
- 238000009413 insulation Methods 0.000 description 10
- 238000001020 plasma etching Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Manufacturing & Machinery (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662307916P | 2016-03-14 | 2016-03-14 | |
US62/307,916 | 2016-03-14 | ||
US15/268,126 US9847342B2 (en) | 2016-03-14 | 2016-09-16 | Semiconductor memory device and method for manufacturing same |
US15/268,126 | 2016-09-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107195633A true CN107195633A (zh) | 2017-09-22 |
CN107195633B CN107195633B (zh) | 2020-12-04 |
Family
ID=59788075
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710084050.6A Active CN107195633B (zh) | 2016-03-14 | 2017-02-16 | 半导体存储装置及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9847342B2 (zh) |
CN (1) | CN107195633B (zh) |
TW (1) | TWI640083B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110875329A (zh) * | 2018-08-31 | 2020-03-10 | 东芝存储器株式会社 | 半导体存储装置及其制造方法 |
CN111725235A (zh) * | 2019-03-22 | 2020-09-29 | 东芝存储器株式会社 | 半导体存储装置 |
US20220399364A1 (en) * | 2021-06-15 | 2022-12-15 | SK Hynix Inc. | Semiconductor memory device and manufacturing method of semiconductor memory device |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6976190B2 (ja) | 2018-02-20 | 2021-12-08 | キオクシア株式会社 | 記憶装置 |
JP2019165089A (ja) * | 2018-03-19 | 2019-09-26 | 東芝メモリ株式会社 | 半導体装置 |
US10707215B2 (en) * | 2018-08-22 | 2020-07-07 | Micron Technology, Inc. | Methods of forming semiconductor devices, and related semiconductor devices, memory devices, and electronic systems |
US11004612B2 (en) * | 2019-03-14 | 2021-05-11 | MicroSol Technologies Inc. | Low temperature sub-nanometer periodic stack dielectrics |
JP7189814B2 (ja) * | 2019-03-18 | 2022-12-14 | キオクシア株式会社 | 半導体記憶装置 |
JP7086883B2 (ja) * | 2019-03-22 | 2022-06-20 | キオクシア株式会社 | 半導体記憶装置 |
JP2020155714A (ja) | 2019-03-22 | 2020-09-24 | キオクシア株式会社 | 半導体記憶装置 |
JP7325552B2 (ja) | 2019-06-28 | 2023-08-14 | 長江存儲科技有限責任公司 | 高記憶密度化3次元フラッシュメモリデバイス |
DE102020133683A1 (de) * | 2020-05-28 | 2021-12-02 | Taiwan Semiconductor Manufacturing Co. Ltd. | Ferroelektrische speichervorrichtung ung verfahren zu deren herstellung |
KR102602494B1 (ko) * | 2020-05-28 | 2023-11-14 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 3차원 메모리 디바이스 및 방법 |
US11716855B2 (en) | 2020-05-28 | 2023-08-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three-dimensional memory device and method |
CN113924646A (zh) * | 2020-10-19 | 2022-01-11 | 长江存储科技有限责任公司 | 三维存储器器件以及用于形成所述三维存储器器件的方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101551901B1 (ko) | 2008-12-31 | 2015-09-09 | 삼성전자주식회사 | 반도체 기억 소자 및 그 형성 방법 |
JP2010192569A (ja) | 2009-02-17 | 2010-09-02 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
US8569829B2 (en) | 2009-12-28 | 2013-10-29 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
JP2011138945A (ja) | 2009-12-28 | 2011-07-14 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2011165972A (ja) | 2010-02-10 | 2011-08-25 | Toshiba Corp | 不揮発性半導体記憶装置 |
US8187936B2 (en) | 2010-06-30 | 2012-05-29 | SanDisk Technologies, Inc. | Ultrahigh density vertical NAND memory device and method of making thereof |
TW201214631A (en) | 2010-06-30 | 2012-04-01 | Sandisk Technologies Inc | Ultrahigh density vertical NAND memory device and method of making thereof |
JP2012227326A (ja) * | 2011-04-19 | 2012-11-15 | Toshiba Corp | 不揮発性半導体記憶装置とその製造方法 |
CN108417560B (zh) * | 2012-10-05 | 2021-11-09 | 三星电子株式会社 | 半导体器件及其制造方法 |
KR102046504B1 (ko) | 2013-01-17 | 2019-11-19 | 삼성전자주식회사 | 수직형 반도체 소자의 패드 구조물 및 배선 구조물 |
JP2017010951A (ja) | 2014-01-10 | 2017-01-12 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
US9984754B2 (en) | 2014-09-29 | 2018-05-29 | Toshiba Memory Corporation | Memory device and method for operating the same |
US9236396B1 (en) * | 2014-11-12 | 2016-01-12 | Sandisk Technologies Inc. | Three dimensional NAND device and method of making thereof |
US10134750B2 (en) | 2014-12-30 | 2018-11-20 | Toshiba Memory Corporation | Stacked type semiconductor memory device and method for manufacturing the same |
CN107548520B (zh) | 2015-02-24 | 2021-05-25 | 东芝存储器株式会社 | 半导体存储装置及其制造方法 |
CN107533977B (zh) | 2015-03-02 | 2021-01-08 | 东芝存储器株式会社 | 半导体存储装置及其制造方法 |
CN113410242A (zh) | 2015-05-01 | 2021-09-17 | 东芝存储器株式会社 | 半导体存储装置 |
CN105304638A (zh) * | 2015-11-16 | 2016-02-03 | 上海新储集成电路有限公司 | 一种三维相变存储器结构及制造方法 |
-
2016
- 2016-09-16 US US15/268,126 patent/US9847342B2/en active Active
-
2017
- 2017-01-26 TW TW106103234A patent/TWI640083B/zh active
- 2017-02-16 CN CN201710084050.6A patent/CN107195633B/zh active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110875329A (zh) * | 2018-08-31 | 2020-03-10 | 东芝存储器株式会社 | 半导体存储装置及其制造方法 |
CN110875329B (zh) * | 2018-08-31 | 2023-07-18 | 铠侠股份有限公司 | 半导体存储装置及其制造方法 |
CN111725235A (zh) * | 2019-03-22 | 2020-09-29 | 东芝存储器株式会社 | 半导体存储装置 |
CN111725235B (zh) * | 2019-03-22 | 2023-09-05 | 铠侠股份有限公司 | 半导体存储装置 |
US20220399364A1 (en) * | 2021-06-15 | 2022-12-15 | SK Hynix Inc. | Semiconductor memory device and manufacturing method of semiconductor memory device |
Also Published As
Publication number | Publication date |
---|---|
US9847342B2 (en) | 2017-12-19 |
TW201807811A (zh) | 2018-03-01 |
CN107195633B (zh) | 2020-12-04 |
US20170263619A1 (en) | 2017-09-14 |
TWI640083B (zh) | 2018-11-01 |
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Address after: Tokyo Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo Patentee before: Pangea Co.,Ltd. Address after: Tokyo Patentee after: Kaixia Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |
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Effective date of registration: 20220303 Address after: Tokyo Patentee after: Pangea Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |
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