CN107195633B - 半导体存储装置及其制造方法 - Google Patents
半导体存储装置及其制造方法 Download PDFInfo
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- CN107195633B CN107195633B CN201710084050.6A CN201710084050A CN107195633B CN 107195633 B CN107195633 B CN 107195633B CN 201710084050 A CN201710084050 A CN 201710084050A CN 107195633 B CN107195633 B CN 107195633B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 172
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 claims description 40
- 229910052710 silicon Inorganic materials 0.000 claims description 37
- 239000010703 silicon Substances 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 16
- 238000003860 storage Methods 0.000 claims description 12
- 238000010030 laminating Methods 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 85
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 27
- 229910052814 silicon oxide Inorganic materials 0.000 description 27
- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- 238000005530 etching Methods 0.000 description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 13
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- 230000010354 integration Effects 0.000 description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- JKGITWJSGDFJKO-UHFFFAOYSA-N ethoxy(trihydroxy)silane Chemical compound CCO[Si](O)(O)O JKGITWJSGDFJKO-UHFFFAOYSA-N 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Manufacturing & Machinery (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662307916P | 2016-03-14 | 2016-03-14 | |
US62/307,916 | 2016-03-14 | ||
US15/268,126 US9847342B2 (en) | 2016-03-14 | 2016-09-16 | Semiconductor memory device and method for manufacturing same |
US15/268,126 | 2016-09-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107195633A CN107195633A (zh) | 2017-09-22 |
CN107195633B true CN107195633B (zh) | 2020-12-04 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710084050.6A Active CN107195633B (zh) | 2016-03-14 | 2017-02-16 | 半导体存储装置及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9847342B2 (zh) |
CN (1) | CN107195633B (zh) |
TW (1) | TWI640083B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6976190B2 (ja) | 2018-02-20 | 2021-12-08 | キオクシア株式会社 | 記憶装置 |
JP2019165089A (ja) * | 2018-03-19 | 2019-09-26 | 東芝メモリ株式会社 | 半導体装置 |
US10707215B2 (en) * | 2018-08-22 | 2020-07-07 | Micron Technology, Inc. | Methods of forming semiconductor devices, and related semiconductor devices, memory devices, and electronic systems |
JP2020035977A (ja) * | 2018-08-31 | 2020-03-05 | キオクシア株式会社 | 半導体記憶装置 |
US11004612B2 (en) * | 2019-03-14 | 2021-05-11 | MicroSol Technologies Inc. | Low temperature sub-nanometer periodic stack dielectrics |
JP7189814B2 (ja) * | 2019-03-18 | 2022-12-14 | キオクシア株式会社 | 半導体記憶装置 |
JP2020155714A (ja) | 2019-03-22 | 2020-09-24 | キオクシア株式会社 | 半導体記憶装置 |
JP7086883B2 (ja) * | 2019-03-22 | 2022-06-20 | キオクシア株式会社 | 半導体記憶装置 |
TWI720547B (zh) * | 2019-03-22 | 2021-03-01 | 日商東芝記憶體股份有限公司 | 半導體記憶裝置 |
KR102672972B1 (ko) | 2019-06-28 | 2024-06-05 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 증가된 저장 밀도를 갖는 3차원 플래시 메모리 디바이스 |
DE102020133683A1 (de) * | 2020-05-28 | 2021-12-02 | Taiwan Semiconductor Manufacturing Co. Ltd. | Ferroelektrische speichervorrichtung ung verfahren zu deren herstellung |
US11716855B2 (en) | 2020-05-28 | 2023-08-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three-dimensional memory device and method |
KR102602494B1 (ko) * | 2020-05-28 | 2023-11-14 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 3차원 메모리 디바이스 및 방법 |
CN113924646A (zh) * | 2020-10-19 | 2022-01-11 | 长江存储科技有限责任公司 | 三维存储器器件以及用于形成所述三维存储器器件的方法 |
KR20220167989A (ko) * | 2021-06-15 | 2022-12-22 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그 제조방법 |
Citations (3)
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---|---|---|---|---|
CN103715176A (zh) * | 2012-10-05 | 2014-04-09 | 三星电子株式会社 | 半导体器件 |
US9236396B1 (en) * | 2014-11-12 | 2016-01-12 | Sandisk Technologies Inc. | Three dimensional NAND device and method of making thereof |
CN105304638A (zh) * | 2015-11-16 | 2016-02-03 | 上海新储集成电路有限公司 | 一种三维相变存储器结构及制造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101551901B1 (ko) | 2008-12-31 | 2015-09-09 | 삼성전자주식회사 | 반도체 기억 소자 및 그 형성 방법 |
JP2010192569A (ja) | 2009-02-17 | 2010-09-02 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
JP2011165972A (ja) | 2010-02-10 | 2011-08-25 | Toshiba Corp | 不揮発性半導体記憶装置 |
US8569829B2 (en) | 2009-12-28 | 2013-10-29 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
JP2011138945A (ja) | 2009-12-28 | 2011-07-14 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2013534058A (ja) | 2010-06-30 | 2013-08-29 | サンディスク テクノロジィース インコーポレイテッド | 超高密度垂直nandメモリデバイスおよびそれを作る方法 |
US8187936B2 (en) | 2010-06-30 | 2012-05-29 | SanDisk Technologies, Inc. | Ultrahigh density vertical NAND memory device and method of making thereof |
JP2012227326A (ja) * | 2011-04-19 | 2012-11-15 | Toshiba Corp | 不揮発性半導体記憶装置とその製造方法 |
KR102046504B1 (ko) | 2013-01-17 | 2019-11-19 | 삼성전자주식회사 | 수직형 반도체 소자의 패드 구조물 및 배선 구조물 |
JP2017010951A (ja) | 2014-01-10 | 2017-01-12 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
US9984754B2 (en) | 2014-09-29 | 2018-05-29 | Toshiba Memory Corporation | Memory device and method for operating the same |
US10134750B2 (en) | 2014-12-30 | 2018-11-20 | Toshiba Memory Corporation | Stacked type semiconductor memory device and method for manufacturing the same |
CN107548520B (zh) | 2015-02-24 | 2021-05-25 | 东芝存储器株式会社 | 半导体存储装置及其制造方法 |
CN107533977B (zh) | 2015-03-02 | 2021-01-08 | 东芝存储器株式会社 | 半导体存储装置及其制造方法 |
CN113410242A (zh) | 2015-05-01 | 2021-09-17 | 东芝存储器株式会社 | 半导体存储装置 |
-
2016
- 2016-09-16 US US15/268,126 patent/US9847342B2/en active Active
-
2017
- 2017-01-26 TW TW106103234A patent/TWI640083B/zh active
- 2017-02-16 CN CN201710084050.6A patent/CN107195633B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103715176A (zh) * | 2012-10-05 | 2014-04-09 | 三星电子株式会社 | 半导体器件 |
US9236396B1 (en) * | 2014-11-12 | 2016-01-12 | Sandisk Technologies Inc. | Three dimensional NAND device and method of making thereof |
CN105304638A (zh) * | 2015-11-16 | 2016-02-03 | 上海新储集成电路有限公司 | 一种三维相变存储器结构及制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN107195633A (zh) | 2017-09-22 |
US9847342B2 (en) | 2017-12-19 |
TWI640083B (zh) | 2018-11-01 |
TW201807811A (zh) | 2018-03-01 |
US20170263619A1 (en) | 2017-09-14 |
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Address after: Tokyo Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo Patentee before: Pangea Co.,Ltd. Address after: Tokyo Patentee after: Kaixia Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |
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Effective date of registration: 20220303 Address after: Tokyo Patentee after: Pangea Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |
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