CN107204337B - 半导体存储装置及其制造方法 - Google Patents
半导体存储装置及其制造方法 Download PDFInfo
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- CN107204337B CN107204337B CN201710017835.1A CN201710017835A CN107204337B CN 107204337 B CN107204337 B CN 107204337B CN 201710017835 A CN201710017835 A CN 201710017835A CN 107204337 B CN107204337 B CN 107204337B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000004020 conductor Substances 0.000 claims abstract description 10
- 238000009825 accumulation Methods 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 15
- 230000000149 penetrating effect Effects 0.000 claims description 10
- 239000011229 interlayer Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 47
- 229910052710 silicon Inorganic materials 0.000 description 47
- 239000010703 silicon Substances 0.000 description 47
- 230000004888 barrier function Effects 0.000 description 24
- 230000002093 peripheral effect Effects 0.000 description 17
- 239000013256 coordination polymer Substances 0.000 description 16
- 238000003860 storage Methods 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 238000011049 filling Methods 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7889—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/50—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the boundary region between the core region and the peripheral circuit region
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662310224P | 2016-03-18 | 2016-03-18 | |
US62/310,224 | 2016-03-18 |
Publications (2)
Publication Number | Publication Date |
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CN107204337A CN107204337A (zh) | 2017-09-26 |
CN107204337B true CN107204337B (zh) | 2021-02-09 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201710017835.1A Active CN107204337B (zh) | 2016-03-18 | 2017-01-11 | 半导体存储装置及其制造方法 |
Country Status (3)
Country | Link |
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US (1) | US9966381B2 (zh) |
CN (1) | CN107204337B (zh) |
TW (1) | TWI622131B (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019161042A (ja) * | 2018-03-14 | 2019-09-19 | 東芝メモリ株式会社 | 半導体装置 |
JP2019169539A (ja) * | 2018-03-22 | 2019-10-03 | 東芝メモリ株式会社 | 半導体記憶装置 |
CN108598081B (zh) * | 2018-04-25 | 2019-12-10 | 长江存储科技有限责任公司 | 三维存储器件及其制造方法 |
TWI691050B (zh) | 2018-07-31 | 2020-04-11 | 日商東芝記憶體股份有限公司 | 半導體記憶裝置 |
JP2020031113A (ja) * | 2018-08-21 | 2020-02-27 | キオクシア株式会社 | 半導体記憶装置およびその製造方法 |
JP2020038900A (ja) * | 2018-09-04 | 2020-03-12 | キオクシア株式会社 | 半導体装置 |
JP2020043119A (ja) * | 2018-09-06 | 2020-03-19 | キオクシア株式会社 | 半導体装置 |
JP2021192396A (ja) * | 2018-09-14 | 2021-12-16 | キオクシア株式会社 | 集積回路装置及び集積回路装置の製造方法 |
JP2020047754A (ja) * | 2018-09-19 | 2020-03-26 | 東芝メモリ株式会社 | 半導体記憶装置 |
JP2020047819A (ja) | 2018-09-20 | 2020-03-26 | キオクシア株式会社 | 半導体記憶装置 |
JP7134901B2 (ja) * | 2019-03-04 | 2022-09-12 | キオクシア株式会社 | 半導体記憶装置の製造方法 |
JP2020145387A (ja) * | 2019-03-08 | 2020-09-10 | キオクシア株式会社 | 半導体記憶装置 |
JP2020155714A (ja) | 2019-03-22 | 2020-09-24 | キオクシア株式会社 | 半導体記憶装置 |
JP2021027125A (ja) * | 2019-08-02 | 2021-02-22 | キオクシア株式会社 | 半導体記憶装置及び半導体記憶装置の製造方法 |
JP2021044512A (ja) * | 2019-09-13 | 2021-03-18 | キオクシア株式会社 | 半導体記憶装置 |
JP2021141283A (ja) * | 2020-03-09 | 2021-09-16 | キオクシア株式会社 | 半導体記憶装置 |
JP2021150573A (ja) | 2020-03-23 | 2021-09-27 | キオクシア株式会社 | 半導体記憶装置 |
JP2022049543A (ja) | 2020-09-16 | 2022-03-29 | キオクシア株式会社 | 半導体記憶装置 |
TWI786797B (zh) * | 2021-09-01 | 2022-12-11 | 旺宏電子股份有限公司 | 記憶體元件及其製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103681684A (zh) * | 2012-08-29 | 2014-03-26 | 爱思开海力士有限公司 | 非易失性存储器件及其制造方法 |
CN104779253A (zh) * | 2014-01-10 | 2015-07-15 | 株式会社东芝 | 半导体存储装置及其制造方法 |
CN104900648A (zh) * | 2014-03-07 | 2015-09-09 | 三星电子株式会社 | 三维半导体器件 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009016400A (ja) | 2007-06-29 | 2009-01-22 | Toshiba Corp | 積層配線構造体及びその製造方法並びに半導体装置及びその製造方法 |
JP4649487B2 (ja) * | 2008-03-17 | 2011-03-09 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
JP4922370B2 (ja) | 2009-09-07 | 2012-04-25 | 株式会社東芝 | 不揮発性半導体記憶装置、及びその製造方法 |
JP2013187335A (ja) | 2012-03-07 | 2013-09-19 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2015028989A (ja) | 2013-07-30 | 2015-02-12 | 株式会社東芝 | 不揮発性記憶装置 |
US20160079252A1 (en) * | 2014-09-11 | 2016-03-17 | Kabushiki Kaisha Toshiba | Semiconductor memory device and method for manufacturing the same |
WO2016139727A1 (ja) | 2015-03-02 | 2016-09-09 | 株式会社 東芝 | 半導体記憶装置及びその製造方法 |
TWI611560B (zh) * | 2015-07-06 | 2018-01-11 | Toshiba Memory Corp | 半導體記憶裝置及其製造方法 |
-
2016
- 2016-08-12 TW TW105125823A patent/TWI622131B/zh active
- 2016-09-16 US US15/267,776 patent/US9966381B2/en active Active
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2017
- 2017-01-11 CN CN201710017835.1A patent/CN107204337B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103681684A (zh) * | 2012-08-29 | 2014-03-26 | 爱思开海力士有限公司 | 非易失性存储器件及其制造方法 |
CN104779253A (zh) * | 2014-01-10 | 2015-07-15 | 株式会社东芝 | 半导体存储装置及其制造方法 |
CN104900648A (zh) * | 2014-03-07 | 2015-09-09 | 三星电子株式会社 | 三维半导体器件 |
Also Published As
Publication number | Publication date |
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TW201735269A (zh) | 2017-10-01 |
US20170271348A1 (en) | 2017-09-21 |
CN107204337A (zh) | 2017-09-26 |
US9966381B2 (en) | 2018-05-08 |
TWI622131B (zh) | 2018-04-21 |
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Address after: Tokyo Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo Patentee before: Pangea Co.,Ltd. Address after: Tokyo Patentee after: Kaixia Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |
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