CN1067773A - 感测半导体存储器件反偏压电平的电路 - Google Patents

感测半导体存储器件反偏压电平的电路 Download PDF

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Publication number
CN1067773A
CN1067773A CN91110773A CN91110773A CN1067773A CN 1067773 A CN1067773 A CN 1067773A CN 91110773 A CN91110773 A CN 91110773A CN 91110773 A CN91110773 A CN 91110773A CN 1067773 A CN1067773 A CN 1067773A
Authority
CN
China
Prior art keywords
mentioned
voltage
bias voltage
raceway groove
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN91110773A
Other languages
English (en)
Chinese (zh)
Inventor
李永宅
韩真晚
金敬昊
黄泓善
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019910009999A external-priority patent/KR930001236A/ko
Priority claimed from KR1019910009997A external-priority patent/KR940008150B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1067773A publication Critical patent/CN1067773A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/316—Testing of analog circuits
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN91110773A 1991-06-17 1991-11-15 感测半导体存储器件反偏压电平的电路 Pending CN1067773A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1019910009999A KR930001236A (ko) 1991-06-17 1991-06-17 전원전압 변동에 둔감한 특성을 갖는 기판 전압 레벨 감지회로
KR1019910009997A KR940008150B1 (ko) 1991-06-17 1991-06-17 반도체 메모리 장치의 백바이어스레벨 감지회로
KR9997/91 1991-06-17
KR9999/91 1991-06-17

Publications (1)

Publication Number Publication Date
CN1067773A true CN1067773A (zh) 1993-01-06

Family

ID=26628647

Family Applications (1)

Application Number Title Priority Date Filing Date
CN91110773A Pending CN1067773A (zh) 1991-06-17 1991-11-15 感测半导体存储器件反偏压电平的电路

Country Status (7)

Country Link
JP (1) JPH04368691A (fr)
CN (1) CN1067773A (fr)
DE (1) DE4135148C2 (fr)
FR (1) FR2677771A1 (fr)
GB (1) GB2256950A (fr)
IT (1) IT1251721B (fr)
NL (1) NL9101710A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100466108C (zh) * 2003-06-10 2009-03-04 微米技术有限公司 在感测存储单元时测量电流的方法和装置
CN108777150A (zh) * 2018-05-02 2018-11-09 友达光电股份有限公司 感测电路

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5337284A (en) * 1993-01-11 1994-08-09 United Memories, Inc. High voltage generator having a self-timed clock circuit and charge pump, and a method therefor
KR0123849B1 (ko) * 1994-04-08 1997-11-25 문정환 반도체 디바이스의 내부 전압발생기
KR0127318B1 (ko) * 1994-04-13 1998-04-02 문정환 백바이어스전압 발생기

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4229667A (en) * 1978-08-23 1980-10-21 Rockwell International Corporation Voltage boosting substrate bias generator
JPS5694654A (en) * 1979-12-27 1981-07-31 Toshiba Corp Generating circuit for substrate bias voltage
US4739191A (en) * 1981-04-27 1988-04-19 Signetics Corporation Depletion-mode FET for the regulation of the on-chip generated substrate bias voltage
JPS57199335A (en) * 1981-06-02 1982-12-07 Toshiba Corp Generating circuit for substrate bias
US4547682A (en) * 1983-10-27 1985-10-15 International Business Machines Corporation Precision regulation, frequency modulated substrate voltage generator
US4581546A (en) * 1983-11-02 1986-04-08 Inmos Corporation CMOS substrate bias generator having only P channel transistors in the charge pump
IT1220982B (it) * 1983-11-30 1990-06-21 Ates Componenti Elettron Circuito regolatore della tensione di polarizzazione del substrato di un circuito integrato a transistori a effetto di campo
JP2501590B2 (ja) * 1987-07-29 1996-05-29 沖電気工業株式会社 半導体装置の駆動回路
JPH0262071A (ja) * 1988-08-26 1990-03-01 Mitsubishi Electric Corp 半導体装置
JPH0783254B2 (ja) * 1989-03-22 1995-09-06 株式会社東芝 半導体集積回路
JP2841480B2 (ja) * 1989-06-21 1998-12-24 日本電気株式会社 基板電位設定回路

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100466108C (zh) * 2003-06-10 2009-03-04 微米技术有限公司 在感测存储单元时测量电流的方法和装置
CN108777150A (zh) * 2018-05-02 2018-11-09 友达光电股份有限公司 感测电路
CN108777150B (zh) * 2018-05-02 2021-02-23 友达光电股份有限公司 感测电路

Also Published As

Publication number Publication date
JPH04368691A (ja) 1992-12-21
IT1251721B (it) 1995-05-22
ITMI912939A0 (it) 1991-11-06
GB2256950A (en) 1992-12-23
DE4135148C2 (de) 1995-02-02
NL9101710A (nl) 1993-01-18
DE4135148A1 (de) 1992-12-24
ITMI912939A1 (it) 1993-05-06
FR2677771A1 (fr) 1992-12-18
GB9124294D0 (en) 1992-01-08

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C20 Patent right or utility model deemed to be abandoned or is abandoned