IT1251721B - Circuito per rilevare il livello di polarizzazione inversa in un dispositivo di memoria a semiconduttore - Google Patents

Circuito per rilevare il livello di polarizzazione inversa in un dispositivo di memoria a semiconduttore

Info

Publication number
IT1251721B
IT1251721B ITMI912939A ITMI912939A IT1251721B IT 1251721 B IT1251721 B IT 1251721B IT MI912939 A ITMI912939 A IT MI912939A IT MI912939 A ITMI912939 A IT MI912939A IT 1251721 B IT1251721 B IT 1251721B
Authority
IT
Italy
Prior art keywords
voltage
reverse
detect
reverse polarization
circuit
Prior art date
Application number
ITMI912939A
Other languages
English (en)
Inventor
Young-Taek Lee
Kyoung-Ho Kim
Jin-Man Han
Hong-Seon Hwang
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019910009999A external-priority patent/KR930001236A/ko
Priority claimed from KR1019910009997A external-priority patent/KR940008150B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI912939A0 publication Critical patent/ITMI912939A0/it
Publication of ITMI912939A1 publication Critical patent/ITMI912939A1/it
Application granted granted Critical
Publication of IT1251721B publication Critical patent/IT1251721B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/316—Testing of analog circuits
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Sensore di livello di polarizzazione inversa impiegabile in un dispositivo a semiconduttore in cui ad una corrente di rilevazione (150) per rilevare la tensione (VBB) di polarizzazione inversa è impedito di scorrere direttamente nel substrato (o terminale di tensione di polarizzazione inversa). La porta di un transistor PMOS (50) è dotata della tensione di polarizzazione inversa mentre la sorgente è dotata della tensione di massa, per cui un circuito pompa (300) esegue l'operazione di pompaggio per aumentare la tensione di polarizzazione inversa quando la tensione di polarizzazione inversa (VBB) è più bassa di un livello di tensione predeterminato; in caso contrario il circuito pompa (300) è diseccitato così da ridurre la tensione di polarizzazione inversa.
ITMI912939A 1991-06-17 1991-11-06 Circuito per rilevare il livello di polarizzazione inversa in un dispositivo di memoria a semiconduttore IT1251721B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019910009999A KR930001236A (ko) 1991-06-17 1991-06-17 전원전압 변동에 둔감한 특성을 갖는 기판 전압 레벨 감지회로
KR1019910009997A KR940008150B1 (ko) 1991-06-17 1991-06-17 반도체 메모리 장치의 백바이어스레벨 감지회로

Publications (3)

Publication Number Publication Date
ITMI912939A0 ITMI912939A0 (it) 1991-11-06
ITMI912939A1 ITMI912939A1 (it) 1993-05-06
IT1251721B true IT1251721B (it) 1995-05-22

Family

ID=26628647

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI912939A IT1251721B (it) 1991-06-17 1991-11-06 Circuito per rilevare il livello di polarizzazione inversa in un dispositivo di memoria a semiconduttore

Country Status (7)

Country Link
JP (1) JPH04368691A (it)
CN (1) CN1067773A (it)
DE (1) DE4135148C2 (it)
FR (1) FR2677771A1 (it)
GB (1) GB2256950A (it)
IT (1) IT1251721B (it)
NL (1) NL9101710A (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5337284A (en) * 1993-01-11 1994-08-09 United Memories, Inc. High voltage generator having a self-timed clock circuit and charge pump, and a method therefor
KR0123849B1 (ko) * 1994-04-08 1997-11-25 문정환 반도체 디바이스의 내부 전압발생기
KR0127318B1 (ko) * 1994-04-13 1998-04-02 문정환 백바이어스전압 발생기
US6795359B1 (en) * 2003-06-10 2004-09-21 Micron Technology, Inc. Methods and apparatus for measuring current as in sensing a memory cell
TWI651929B (zh) * 2018-05-02 2019-02-21 友達光電股份有限公司 感測電路

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4229667A (en) * 1978-08-23 1980-10-21 Rockwell International Corporation Voltage boosting substrate bias generator
JPS5694654A (en) * 1979-12-27 1981-07-31 Toshiba Corp Generating circuit for substrate bias voltage
US4739191A (en) * 1981-04-27 1988-04-19 Signetics Corporation Depletion-mode FET for the regulation of the on-chip generated substrate bias voltage
JPS57199335A (en) * 1981-06-02 1982-12-07 Toshiba Corp Generating circuit for substrate bias
US4547682A (en) * 1983-10-27 1985-10-15 International Business Machines Corporation Precision regulation, frequency modulated substrate voltage generator
US4581546A (en) * 1983-11-02 1986-04-08 Inmos Corporation CMOS substrate bias generator having only P channel transistors in the charge pump
IT1220982B (it) * 1983-11-30 1990-06-21 Ates Componenti Elettron Circuito regolatore della tensione di polarizzazione del substrato di un circuito integrato a transistori a effetto di campo
JP2501590B2 (ja) * 1987-07-29 1996-05-29 沖電気工業株式会社 半導体装置の駆動回路
JPH0262071A (ja) * 1988-08-26 1990-03-01 Mitsubishi Electric Corp 半導体装置
JPH0783254B2 (ja) * 1989-03-22 1995-09-06 株式会社東芝 半導体集積回路
JP2841480B2 (ja) * 1989-06-21 1998-12-24 日本電気株式会社 基板電位設定回路

Also Published As

Publication number Publication date
GB2256950A (en) 1992-12-23
DE4135148A1 (de) 1992-12-24
JPH04368691A (ja) 1992-12-21
DE4135148C2 (de) 1995-02-02
CN1067773A (zh) 1993-01-06
ITMI912939A1 (it) 1993-05-06
NL9101710A (nl) 1993-01-18
GB9124294D0 (en) 1992-01-08
ITMI912939A0 (it) 1991-11-06
FR2677771A1 (fr) 1992-12-18

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