CN106663626B - 附着物的去除方法以及干式蚀刻方法 - Google Patents

附着物的去除方法以及干式蚀刻方法 Download PDF

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Publication number
CN106663626B
CN106663626B CN201580044038.1A CN201580044038A CN106663626B CN 106663626 B CN106663626 B CN 106663626B CN 201580044038 A CN201580044038 A CN 201580044038A CN 106663626 B CN106663626 B CN 106663626B
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gas
etching
substrate
iodine
chamber
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Chinese (zh)
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CN106663626A (zh
Inventor
菊池亚纪应
涉仁纪
龟田贤治
桧山真
坪田康寿
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Central Glass Co Ltd
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Central Glass Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/30—Cleaning after the substrates have been singulated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H10P70/125—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only with gaseous HF
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
CN201580044038.1A 2014-09-24 2015-09-07 附着物的去除方法以及干式蚀刻方法 Active CN106663626B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014-193435 2014-09-24
JP2014193435A JP6210039B2 (ja) 2014-09-24 2014-09-24 付着物の除去方法及びドライエッチング方法
PCT/JP2015/075368 WO2016047429A1 (ja) 2014-09-24 2015-09-07 付着物の除去方法、ドライエッチング方法、及び基板処理装置

Publications (2)

Publication Number Publication Date
CN106663626A CN106663626A (zh) 2017-05-10
CN106663626B true CN106663626B (zh) 2019-11-05

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CN201580044038.1A Active CN106663626B (zh) 2014-09-24 2015-09-07 附着物的去除方法以及干式蚀刻方法

Country Status (5)

Country Link
US (1) US10153153B2 (enExample)
JP (1) JP6210039B2 (enExample)
KR (1) KR101955829B1 (enExample)
CN (1) CN106663626B (enExample)
WO (1) WO2016047429A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190042553A (ko) 2016-08-31 2019-04-24 내셔널 유니버서티 코포레이션 요코하마 내셔널 유니버서티 반도체 제조용 챔버의 클리닝 방법
US11584989B2 (en) * 2017-03-27 2023-02-21 Kanto Denka Kogyo Co., Ltd. Dry etching method or dry cleaning method
JP7053991B2 (ja) * 2017-03-28 2022-04-13 セントラル硝子株式会社 ドライエッチング方法、半導体素子の製造方法及びチャンバークリーニング方法
JP7157299B2 (ja) * 2017-07-14 2022-10-20 セントラル硝子株式会社 酸フッ化金属の処理方法及びクリーニング方法
JP6981267B2 (ja) * 2018-01-17 2021-12-15 東京エレクトロン株式会社 エッチング方法及びエッチング装置
JP7058520B2 (ja) 2018-03-05 2022-04-22 東京エレクトロン株式会社 シリコン膜の成膜方法及び基板処理装置
CN111886674B (zh) * 2018-03-29 2024-03-12 中央硝子株式会社 基板处理用气体、保管容器和基板处理方法
CN110491770B (zh) * 2018-05-15 2024-04-09 东京毅力科创株式会社 基板处理方法、存储介质以及基板处理装置
JP7072440B2 (ja) * 2018-05-16 2022-05-20 東京エレクトロン株式会社 シリコン含有膜のエッチング方法、コンピュータ記憶媒体、及びシリコン含有膜のエッチング装置
JP7174180B2 (ja) * 2018-05-16 2022-11-17 東京エレクトロン株式会社 シリコン含有膜のエッチング方法、コンピュータ記憶媒体、及びシリコン含有膜のエッチング装置
JP2020068221A (ja) * 2018-10-22 2020-04-30 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP6905505B2 (ja) * 2018-12-13 2021-07-21 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、表面処理方法、基板処理装置、およびプログラム
IL284319B2 (en) 2018-12-25 2025-06-01 Showa Denko Kk Adhesion removal method and film-forming method
TWI694872B (zh) * 2019-01-18 2020-06-01 弘塑科技股份有限公司 批次基板乾燥設備及其基板乾燥風刀裝置
CN114008748B (zh) * 2019-06-27 2025-06-10 三菱电机株式会社 光半导体装置的制造方法
CN113811984A (zh) * 2019-10-25 2021-12-17 昭和电工株式会社 氮化硅的蚀刻方法及半导体元件的制造方法
WO2021171986A1 (ja) * 2020-02-26 2021-09-02 昭和電工株式会社 ドライエッチング方法、半導体素子の製造方法、及びクリーニング方法
JP7258826B2 (ja) * 2020-06-30 2023-04-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
JPWO2022230859A1 (enExample) * 2021-04-28 2022-11-03
JP7430677B2 (ja) * 2021-09-21 2024-02-13 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびプログラム
CN116344341A (zh) * 2021-12-24 2023-06-27 成都高真科技有限公司 一种晶圆表面聚合膜质去除方法及测试晶圆再生方法
CN115318761B (zh) * 2022-08-16 2023-10-13 长鑫存储技术有限公司 腔室清洗方法
US12454647B2 (en) * 2022-12-07 2025-10-28 National Cheng Kung University Method for reactive ion etching
TW202516644A (zh) * 2023-03-31 2025-04-16 日商東京威力科創股份有限公司 測定方法及基板處理裝置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1080926C (zh) * 1995-02-03 2002-03-13 松下电器产业株式会社 半导体器件制造方法
JP2008177209A (ja) * 2007-01-16 2008-07-31 Taiyo Nippon Sanso Corp プラズマエッチング方法
CN101504915A (zh) * 2008-02-07 2009-08-12 东京毅力科创株式会社 等离子体蚀刻方法和等离子体蚀刻装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3378337A (en) 1965-05-17 1968-04-16 Lithium Corp Preparation of iodic acid and derivatives thereof
US5213622A (en) * 1991-10-11 1993-05-25 Air Products And Chemicals, Inc. Cleaning agents for fabricating integrated circuits and a process for using the same
JP2000058515A (ja) 1997-08-08 2000-02-25 Mitsui Chemicals Inc 金属酸化物／フォトレジスト膜積層体のドライエッチング方法
US20010008227A1 (en) 1997-08-08 2001-07-19 Mitsuru Sadamoto Dry etching method of metal oxide/photoresist film laminate
JP3926033B2 (ja) * 1998-05-28 2007-06-06 三井化学株式会社 ドライエッチング装置およびその運転方法
JP3494933B2 (ja) 1998-10-26 2004-02-09 株式会社ルネサステクノロジ 半導体製造装置のクリ−ニング方法
JP4197783B2 (ja) 1998-11-20 2008-12-17 関東電化工業株式会社 フッ素化ハロゲン化合物の製造方法
US20040231695A1 (en) 2001-12-13 2004-11-25 Hiromoto Ohno Cleaning gas for semiconductor production equipment and cleaning method using the gas
JP3855081B2 (ja) * 2002-07-01 2006-12-06 株式会社日立国際電気 フッ素ガスによるクリーニング機構を備えたｃｖｄ装置およびｃｖｄ装置のフッ素ガスによるクリーニング方法
EP1587604B1 (en) 2003-01-29 2006-11-29 Showa Denko K.K. Process for decomposing fluorine compounds
JP2004249285A (ja) * 2003-01-29 2004-09-09 Showa Denko Kk フッ素化合物の分解方法
US6953705B2 (en) 2003-07-22 2005-10-11 E. I. Du Pont De Nemours And Company Process for removing an organic layer during fabrication of an organic electronic device
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP5550412B2 (ja) 2010-03-29 2014-07-16 岩谷産業株式会社 真空吸気配管のクリーニング方法
JP5785818B2 (ja) 2011-08-26 2015-09-30 岩谷産業株式会社 クラスタによる加工方法
JP6032033B2 (ja) 2013-02-01 2016-11-24 セントラル硝子株式会社 シリコンのドライエッチング方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1080926C (zh) * 1995-02-03 2002-03-13 松下电器产业株式会社 半导体器件制造方法
JP2008177209A (ja) * 2007-01-16 2008-07-31 Taiyo Nippon Sanso Corp プラズマエッチング方法
CN101504915A (zh) * 2008-02-07 2009-08-12 东京毅力科创株式会社 等离子体蚀刻方法和等离子体蚀刻装置

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Publication number Publication date
US20170200602A1 (en) 2017-07-13
JP6210039B2 (ja) 2017-10-11
JP2016066658A (ja) 2016-04-28
KR20170019460A (ko) 2017-02-21
KR101955829B1 (ko) 2019-03-07
WO2016047429A1 (ja) 2016-03-31
CN106663626A (zh) 2017-05-10
US10153153B2 (en) 2018-12-11

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