SG11202106864TA - Adhesion removal method and film-forming method - Google Patents
Adhesion removal method and film-forming methodInfo
- Publication number
- SG11202106864TA SG11202106864TA SG11202106864TA SG11202106864TA SG11202106864TA SG 11202106864T A SG11202106864T A SG 11202106864TA SG 11202106864T A SG11202106864T A SG 11202106864TA SG 11202106864T A SG11202106864T A SG 11202106864TA SG 11202106864T A SG11202106864T A SG 11202106864TA
- Authority
- SG
- Singapore
- Prior art keywords
- film
- adhesion removal
- forming method
- forming
- removal method
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018240575 | 2018-12-25 | ||
PCT/JP2019/048352 WO2020137528A1 (en) | 2018-12-25 | 2019-12-10 | Method for removing deposits and method for forming film |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202106864TA true SG11202106864TA (en) | 2021-07-29 |
Family
ID=71127187
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202106864TA SG11202106864TA (en) | 2018-12-25 | 2019-12-10 | Adhesion removal method and film-forming method |
Country Status (9)
Country | Link |
---|---|
US (1) | US20220059327A1 (en) |
EP (1) | EP3905309A4 (en) |
JP (1) | JP7367703B2 (en) |
KR (1) | KR102662111B1 (en) |
CN (1) | CN113261081B (en) |
IL (1) | IL284319A (en) |
SG (1) | SG11202106864TA (en) |
TW (1) | TWI724689B (en) |
WO (1) | WO2020137528A1 (en) |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0922892A (en) * | 1995-07-04 | 1997-01-21 | Hitachi Ltd | Manufacture of compound semiconductor device |
KR100189338B1 (en) | 1996-12-30 | 1999-06-01 | 오상수 | Ejection mold |
KR100207789B1 (en) | 1997-01-22 | 1999-07-15 | 윤종용 | Poligon mirror control apparatus |
US6379575B1 (en) * | 1997-10-21 | 2002-04-30 | Applied Materials, Inc. | Treatment of etching chambers using activated cleaning gas |
US6566269B1 (en) * | 2000-07-14 | 2003-05-20 | Lucent Technologies Inc. | Removal of post etch residuals on wafer surface |
US6581612B1 (en) * | 2001-04-17 | 2003-06-24 | Applied Materials Inc. | Chamber cleaning with fluorides of iodine |
EP1733072A2 (en) * | 2004-03-24 | 2006-12-20 | Massachusetts Institute Of Technology | Remote chamber methods for removing surface deposits |
US20070006893A1 (en) * | 2005-07-08 | 2007-01-11 | Bing Ji | Free radical initiator in remote plasma chamber clean |
EP1912889B1 (en) * | 2005-08-04 | 2015-09-02 | SPP Process Technology Systems UK Limited | A method of processing substrates |
GB0516054D0 (en) * | 2005-08-04 | 2005-09-14 | Trikon Technologies Ltd | A method of processing substrates |
SG171606A1 (en) * | 2006-04-26 | 2011-06-29 | Advanced Tech Materials | Cleaning of semiconductor processing systems |
JP2009076590A (en) * | 2007-09-19 | 2009-04-09 | Hitachi Kokusai Electric Inc | Cleaning method |
JP2011189338A (en) * | 2010-02-22 | 2011-09-29 | Hitachi High-Tech Instruments Co Ltd | Plasma cleaning method |
JP5550412B2 (en) | 2010-03-29 | 2014-07-16 | 岩谷産業株式会社 | Vacuum intake pipe cleaning method |
CN102339775A (en) * | 2011-09-23 | 2012-02-01 | 复旦大学 | Method for washing and purifying autologous oxide on surface of GaAs (gallium arsenide) and depositing Al2O3 medium |
US20130220380A1 (en) * | 2012-02-29 | 2013-08-29 | Solar Turbines Incorporated | Hot air injector cleaning system and process |
JP5933347B2 (en) * | 2012-06-04 | 2016-06-08 | 大陽日酸株式会社 | Silicon carbide removal method |
WO2014037485A1 (en) * | 2012-09-10 | 2014-03-13 | Solvay Sa | A chamber cleaning method using f2 and a process for manufacture of f2 for this method |
JP2014127627A (en) * | 2012-12-27 | 2014-07-07 | Tokyo Electron Ltd | Cleaning method of thin film deposition apparatus, thin film deposition method, thin film deposition apparatus, and program |
JP6210039B2 (en) * | 2014-09-24 | 2017-10-11 | セントラル硝子株式会社 | Deposit removal method and dry etching method |
JP2016207789A (en) * | 2015-04-20 | 2016-12-08 | 東京エレクトロン株式会社 | Passivation processing method, semiconductor structure forming method, and semiconductor structure |
KR102647983B1 (en) * | 2018-12-25 | 2024-03-15 | 가부시끼가이샤 레조낙 | Attachment removal method and film forming method |
-
2019
- 2019-12-10 SG SG11202106864TA patent/SG11202106864TA/en unknown
- 2019-12-10 KR KR1020217019237A patent/KR102662111B1/en active IP Right Grant
- 2019-12-10 WO PCT/JP2019/048352 patent/WO2020137528A1/en unknown
- 2019-12-10 US US17/417,912 patent/US20220059327A1/en active Pending
- 2019-12-10 JP JP2020563037A patent/JP7367703B2/en active Active
- 2019-12-10 EP EP19904356.3A patent/EP3905309A4/en active Pending
- 2019-12-10 CN CN201980085403.1A patent/CN113261081B/en active Active
- 2019-12-17 TW TW108146095A patent/TWI724689B/en active
-
2021
- 2021-06-23 IL IL284319A patent/IL284319A/en unknown
Also Published As
Publication number | Publication date |
---|---|
JP7367703B2 (en) | 2023-10-24 |
WO2020137528A1 (en) | 2020-07-02 |
TWI724689B (en) | 2021-04-11 |
TW202030354A (en) | 2020-08-16 |
IL284319A (en) | 2021-08-31 |
US20220059327A1 (en) | 2022-02-24 |
EP3905309A1 (en) | 2021-11-03 |
JPWO2020137528A1 (en) | 2021-11-04 |
CN113261081B (en) | 2024-04-12 |
KR102662111B1 (en) | 2024-05-03 |
EP3905309A4 (en) | 2022-03-16 |
CN113261081A (en) | 2021-08-13 |
KR20210092813A (en) | 2021-07-26 |
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