CN106560933A - 具导角反射结构的发光装置及其制造方法 - Google Patents
具导角反射结构的发光装置及其制造方法 Download PDFInfo
- Publication number
- CN106560933A CN106560933A CN201610033451.4A CN201610033451A CN106560933A CN 106560933 A CN106560933 A CN 106560933A CN 201610033451 A CN201610033451 A CN 201610033451A CN 106560933 A CN106560933 A CN 106560933A
- Authority
- CN
- China
- Prior art keywords
- light
- fluorescence
- emitting device
- led chip
- catoptric arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 59
- 239000000463 material Substances 0.000 claims description 63
- 238000000576 coating method Methods 0.000 claims description 58
- 239000011248 coating agent Substances 0.000 claims description 56
- 238000000034 method Methods 0.000 claims description 46
- 239000012528 membrane Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 19
- 238000004080 punching Methods 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 238000005520 cutting process Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 6
- 239000000741 silica gel Substances 0.000 claims description 5
- 229910002027 silica gel Inorganic materials 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 3
- -1 poly- phthalyl Amine Chemical class 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 239000004531 microgranule Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 229910052582 BN Inorganic materials 0.000 claims 1
- 239000004408 titanium dioxide Substances 0.000 claims 1
- 230000008859 change Effects 0.000 abstract description 5
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 34
- 238000005516 engineering process Methods 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000013461 design Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 238000007711 solidification Methods 0.000 description 5
- 230000008023 solidification Effects 0.000 description 5
- 239000002390 adhesive tape Substances 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
- 208000002173 dizziness Diseases 0.000 description 4
- 238000003801 milling Methods 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 229920006375 polyphtalamide Polymers 0.000 description 3
- 239000004954 Polyphthalamide Substances 0.000 description 2
- 229920000297 Rayon Polymers 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 206010010356 Congenital anomaly Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000011222 crystalline ceramic Substances 0.000 description 1
- 229910002106 crystalline ceramic Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 229920006336 epoxy molding compound Polymers 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/280,927 US10763404B2 (en) | 2015-10-05 | 2016-09-29 | Light emitting device with beveled reflector and manufacturing method of the same |
EP16192043.4A EP3154095B1 (en) | 2015-10-05 | 2016-10-03 | Light emitting device with beveled reflector and manufacturing method of the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104132711A TWI677114B (zh) | 2015-10-05 | 2015-10-05 | 具導角反射結構的發光裝置 |
TW104132711 | 2015-10-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN106560933A true CN106560933A (zh) | 2017-04-12 |
Family
ID=58485514
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610033451.4A Pending CN106560933A (zh) | 2015-10-05 | 2016-01-19 | 具导角反射结构的发光装置及其制造方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6599295B2 (ko) |
KR (2) | KR20170040761A (ko) |
CN (1) | CN106560933A (ko) |
TW (1) | TWI677114B (ko) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107039572A (zh) * | 2016-02-03 | 2017-08-11 | 行家光电股份有限公司 | 具非对称性光形的发光装置及其制造方法 |
CN108279528A (zh) * | 2018-01-17 | 2018-07-13 | 惠州市华星光电技术有限公司 | 一种背光源 |
US10230030B2 (en) | 2016-01-28 | 2019-03-12 | Maven Optronics Co., Ltd. | Light emitting device with asymmetrical radiation pattern and manufacturing method of the same |
CN109494289A (zh) * | 2017-09-11 | 2019-03-19 | 行家光电股份有限公司 | 应用量子点色彩转换的发光装置及其制造方法 |
TWI658610B (zh) * | 2017-09-08 | 2019-05-01 | Maven Optronics Co., Ltd. | 應用量子點色彩轉換之發光裝置及其製造方法 |
CN109994590A (zh) * | 2019-04-11 | 2019-07-09 | 中山市立体光电科技有限公司 | 一种红光led封装器件及其制作方法 |
CN110176529A (zh) * | 2018-02-20 | 2019-08-27 | 晶元光电股份有限公司 | 发光元件及其制作方法 |
CN111162151A (zh) * | 2018-11-07 | 2020-05-15 | 深圳市聚飞光电股份有限公司 | 一种led芯片封装方法及led灯珠 |
CN111162156A (zh) * | 2018-11-07 | 2020-05-15 | 深圳市聚飞光电股份有限公司 | 一种led芯片封装方法及led灯珠 |
US10879434B2 (en) | 2017-09-08 | 2020-12-29 | Maven Optronics Co., Ltd. | Quantum dot-based color-converted light emitting device and method for manufacturing the same |
CN114335306A (zh) * | 2021-12-13 | 2022-04-12 | 深圳市穗晶光电股份有限公司 | 一种新型白光led芯片 |
CN117153995A (zh) * | 2023-10-30 | 2023-12-01 | 罗化芯显示科技开发(江苏)有限公司 | 一种led封装膜层及led封装结构 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10522728B2 (en) | 2017-01-26 | 2019-12-31 | Maven Optronics Co., Ltd. | Beveled chip reflector for chip-scale packaging light-emitting device and manufacturing method of the same |
JP6729525B2 (ja) * | 2017-09-14 | 2020-07-22 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP7174215B2 (ja) * | 2017-09-29 | 2022-11-17 | 日亜化学工業株式会社 | 発光装置の製造方法及び発光装置 |
DE102018126783A1 (de) | 2017-10-26 | 2019-05-02 | Epistar Corporation | Lichtemittierende Vorrichtung |
KR20190046392A (ko) * | 2017-10-26 | 2019-05-07 | 루미마이크로 주식회사 | 발광 패키지 |
KR102530755B1 (ko) * | 2017-12-07 | 2023-05-10 | 삼성전자주식회사 | 광 반사 패턴 및 파장 변환 층을 갖는 발광 소자 |
US10461231B2 (en) * | 2018-02-27 | 2019-10-29 | Lumens Co., Ltd. | Method for fabricating LED package |
JP6576581B1 (ja) * | 2018-03-29 | 2019-09-18 | ルーメンス カンパニー リミテッド | サイドビューledパッケージ及びサイドビューledモジュール |
KR102621850B1 (ko) * | 2018-03-29 | 2024-01-08 | 주식회사 루멘스 | 사이드뷰 엘이디 패키지 및 사이드뷰 엘이디 모듈 |
KR102567568B1 (ko) * | 2018-04-06 | 2023-08-16 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 패키지 |
JP6848997B2 (ja) * | 2018-04-11 | 2021-03-24 | 日亜化学工業株式会社 | 発光装置 |
US10553768B2 (en) | 2018-04-11 | 2020-02-04 | Nichia Corporation | Light-emitting device |
JP7133973B2 (ja) * | 2018-05-10 | 2022-09-09 | スタンレー電気株式会社 | 半導体発光装置 |
JP2019201089A (ja) * | 2018-05-15 | 2019-11-21 | マブン オプトロニックス カンパニー リミテッドMaven Optronics Co., Ltd. | チップスケールパッケージング発光素子の斜角チップ反射器およびその製造方法 |
JP7054005B2 (ja) * | 2018-09-28 | 2022-04-13 | 日亜化学工業株式会社 | 発光装置 |
KR102101346B1 (ko) * | 2018-11-19 | 2020-05-27 | (주)호전에이블 | Led 플립칩 어레이 및 그 결합방법 |
WO2020153191A1 (ja) | 2019-01-25 | 2020-07-30 | ソニー株式会社 | 発光デバイスおよび画像表示装置 |
KR102131666B1 (ko) | 2019-11-08 | 2020-07-08 | 주식회사 위드플러스 | 발포잉크 리플렉터 및 이를 인쇄방식으로 인쇄회로기판에 형성하는 방법 |
KR102096668B1 (ko) | 2019-12-24 | 2020-04-03 | (주)코리아시스템 | 발광 디바이스 |
JP7189451B2 (ja) | 2020-06-30 | 2022-12-14 | 日亜化学工業株式会社 | 発光モジュール、液晶表示装置 |
KR102607323B1 (ko) * | 2020-08-28 | 2023-11-29 | 니치아 카가쿠 고교 가부시키가이샤 | 발광 장치 |
JP7328557B2 (ja) | 2020-11-30 | 2023-08-17 | 日亜化学工業株式会社 | 光源、光源装置および光源の製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102165611A (zh) * | 2008-09-25 | 2011-08-24 | 皇家飞利浦电子股份有限公司 | 有涂层的发光器件及其涂覆方法 |
US20130113010A1 (en) * | 2010-04-30 | 2013-05-09 | Osram Opto Semiconductors Gmbh | Optoelectronic Component and Method for Producing an Optoelectronic Component |
WO2015025247A1 (en) * | 2013-08-20 | 2015-02-26 | Koninklijke Philips N.V. | Shaped phosphor to reduce repeated reflections |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4504056B2 (ja) * | 2004-03-22 | 2010-07-14 | スタンレー電気株式会社 | 半導体発光装置の製造方法 |
US20090321758A1 (en) * | 2008-06-25 | 2009-12-31 | Wen-Huang Liu | Led with improved external light extraction efficiency |
TWI416767B (zh) * | 2009-06-03 | 2013-11-21 | Kwo Ger Metal Technology Inc | LED luminous module process method |
JP5426481B2 (ja) * | 2010-05-26 | 2014-02-26 | 株式会社東芝 | 発光装置 |
JP5572013B2 (ja) * | 2010-06-16 | 2014-08-13 | スタンレー電気株式会社 | 発光装置およびその製造方法 |
TWI597869B (zh) * | 2010-07-30 | 2017-09-01 | 榮創能源科技股份有限公司 | 發光裝置封裝結構及其製造方法 |
KR20120061376A (ko) * | 2010-12-03 | 2012-06-13 | 삼성엘이디 주식회사 | 반도체 발광 소자에 형광체를 도포하는 방법 |
TWI577056B (zh) * | 2010-12-03 | 2017-04-01 | 榮創能源科技股份有限公司 | 發光二極體及製造方法 |
JP2013077679A (ja) * | 2011-09-30 | 2013-04-25 | Citizen Electronics Co Ltd | 半導体発光装置とその製造方法 |
US9269873B2 (en) * | 2012-03-13 | 2016-02-23 | Citizen Holdings Co., Ltd. | Semiconductor light emitting device and method for manufacturing same |
CN103378282A (zh) * | 2012-04-27 | 2013-10-30 | 展晶科技(深圳)有限公司 | 发光二极管封装结构的制造方法 |
WO2014014025A1 (ja) * | 2012-07-20 | 2014-01-23 | 日立化成株式会社 | 銀硫化防止材、銀硫化防止膜の形成方法、発光装置の製造方法及び発光装置 |
WO2014091914A1 (ja) * | 2012-12-10 | 2014-06-19 | シチズンホールディングス株式会社 | Led装置及びその製造方法 |
DE102013103416A1 (de) * | 2013-04-05 | 2014-10-23 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung emittierende Baugruppe und Verfahren zum Herstellen einer elektromagnetische Strahlung emittierenden Baugruppe |
TWI660526B (zh) * | 2013-08-29 | 2019-05-21 | 日本特殊陶業股份有限公司 | 發光元件、發光裝置及彼等之製造方法 |
CN105874617A (zh) * | 2014-01-07 | 2016-08-17 | 皇家飞利浦有限公司 | 具有磷光体转换器的无胶发光器件 |
JP6311319B2 (ja) * | 2014-01-14 | 2018-04-18 | 大日本印刷株式会社 | 樹脂組成物、リフレクター、リフレクター付きリードフレーム、及び半導体発光装置 |
WO2015119858A1 (en) * | 2014-02-05 | 2015-08-13 | Cooledge Lighting Inc. | Light-emitting dies incorporating wavelength-conversion materials and related methods |
JP2015173142A (ja) * | 2014-03-11 | 2015-10-01 | 株式会社東芝 | 半導体発光装置 |
JP6323176B2 (ja) * | 2014-05-30 | 2018-05-16 | 日亜化学工業株式会社 | 発光装置の製造方法 |
-
2015
- 2015-10-05 TW TW104132711A patent/TWI677114B/zh active
-
2016
- 2016-01-19 CN CN201610033451.4A patent/CN106560933A/zh active Pending
- 2016-10-04 KR KR1020160127825A patent/KR20170040761A/ko active Application Filing
- 2016-10-05 JP JP2016197250A patent/JP6599295B2/ja active Active
-
2018
- 2018-11-21 KR KR1020180144254A patent/KR102339021B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102165611A (zh) * | 2008-09-25 | 2011-08-24 | 皇家飞利浦电子股份有限公司 | 有涂层的发光器件及其涂覆方法 |
US20130113010A1 (en) * | 2010-04-30 | 2013-05-09 | Osram Opto Semiconductors Gmbh | Optoelectronic Component and Method for Producing an Optoelectronic Component |
WO2015025247A1 (en) * | 2013-08-20 | 2015-02-26 | Koninklijke Philips N.V. | Shaped phosphor to reduce repeated reflections |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10707391B2 (en) | 2016-01-28 | 2020-07-07 | Maven Optronics Co., Ltd. | Light emitting device with asymmetrical radiation pattern and manufacturing method of the same |
US10230030B2 (en) | 2016-01-28 | 2019-03-12 | Maven Optronics Co., Ltd. | Light emitting device with asymmetrical radiation pattern and manufacturing method of the same |
CN107039572B (zh) * | 2016-02-03 | 2019-05-10 | 行家光电股份有限公司 | 具非对称性光形的发光装置及其制造方法 |
CN107039572A (zh) * | 2016-02-03 | 2017-08-11 | 行家光电股份有限公司 | 具非对称性光形的发光装置及其制造方法 |
TWI658610B (zh) * | 2017-09-08 | 2019-05-01 | Maven Optronics Co., Ltd. | 應用量子點色彩轉換之發光裝置及其製造方法 |
US10879434B2 (en) | 2017-09-08 | 2020-12-29 | Maven Optronics Co., Ltd. | Quantum dot-based color-converted light emitting device and method for manufacturing the same |
CN109494289A (zh) * | 2017-09-11 | 2019-03-19 | 行家光电股份有限公司 | 应用量子点色彩转换的发光装置及其制造方法 |
CN108279528A (zh) * | 2018-01-17 | 2018-07-13 | 惠州市华星光电技术有限公司 | 一种背光源 |
CN110176529B (zh) * | 2018-02-20 | 2022-03-08 | 晶元光电股份有限公司 | 发光元件及其制作方法 |
CN110176529A (zh) * | 2018-02-20 | 2019-08-27 | 晶元光电股份有限公司 | 发光元件及其制作方法 |
CN111162156A (zh) * | 2018-11-07 | 2020-05-15 | 深圳市聚飞光电股份有限公司 | 一种led芯片封装方法及led灯珠 |
CN111162151A (zh) * | 2018-11-07 | 2020-05-15 | 深圳市聚飞光电股份有限公司 | 一种led芯片封装方法及led灯珠 |
CN109994590A (zh) * | 2019-04-11 | 2019-07-09 | 中山市立体光电科技有限公司 | 一种红光led封装器件及其制作方法 |
CN114335306A (zh) * | 2021-12-13 | 2022-04-12 | 深圳市穗晶光电股份有限公司 | 一种新型白光led芯片 |
CN117153995A (zh) * | 2023-10-30 | 2023-12-01 | 罗化芯显示科技开发(江苏)有限公司 | 一种led封装膜层及led封装结构 |
Also Published As
Publication number | Publication date |
---|---|
TWI677114B (zh) | 2019-11-11 |
KR102339021B1 (ko) | 2021-12-15 |
KR20170040761A (ko) | 2017-04-13 |
JP2017108111A (ja) | 2017-06-15 |
JP6599295B2 (ja) | 2019-10-30 |
TW201714329A (zh) | 2017-04-16 |
KR20180127292A (ko) | 2018-11-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106560933A (zh) | 具导角反射结构的发光装置及其制造方法 | |
JP5824142B2 (ja) | 光学要素、オプトエレクトロニクス部品、およびこれらの製造方法 | |
US20180097156A1 (en) | Optoelectronic Lighting Device and Method for the Production of an Optoelectronic Lighting Device | |
US9425367B2 (en) | Light emitting device having opening for extracting light and method for manufacturing light emitting device having opening for extracting light | |
US10522728B2 (en) | Beveled chip reflector for chip-scale packaging light-emitting device and manufacturing method of the same | |
CN107039572B (zh) | 具非对称性光形的发光装置及其制造方法 | |
CN106058006A (zh) | 发光装置及其制造方法 | |
CN108365075A (zh) | 具有斜面晶片反射结构的晶片级封装发光装置及其制造方法 | |
CN107507899B (zh) | 单面发光csp光源制造方法 | |
US20160181483A1 (en) | Method of producing a converter element and an optoelectronic component, converter element and optoelectronic component | |
JP2010532104A5 (ko) | ||
JP2017168819A (ja) | 非対称放射パターンを有する発光素子およびその製造方法 | |
US20120074432A1 (en) | Led package module and manufacturing method thereof | |
CN106298754A (zh) | 一种csp灯珠的制作方法及csp灯珠 | |
CN103515511B (zh) | 发光二极管封装结构及其封装方法 | |
KR100665372B1 (ko) | 광 추출 효율이 높은 발광 다이오드 패키지 구조 및 이의제조방법 | |
US10026880B2 (en) | Optoelectronic component | |
US20070018189A1 (en) | Light emitting diode | |
TWI669836B (zh) | 發光裝置的製造方法 | |
CN106952991A (zh) | 芯片级封装发光装置及其制造方法 | |
CN102779912A (zh) | 一种白光发光二极管的结构及其制造方法 | |
CN101577300A (zh) | 发光二极管及其封装方法 | |
CN107046091A (zh) | 具光形调整结构的发光装置及其制造方法 | |
JP2008270390A (ja) | フロントカバー、発光装置およびフロントカバーの製造方法 | |
GB2428879A (en) | Light emitting diode with uniform colour mixing |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170412 |