CN106560933A - 具导角反射结构的发光装置及其制造方法 - Google Patents

具导角反射结构的发光装置及其制造方法 Download PDF

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Publication number
CN106560933A
CN106560933A CN201610033451.4A CN201610033451A CN106560933A CN 106560933 A CN106560933 A CN 106560933A CN 201610033451 A CN201610033451 A CN 201610033451A CN 106560933 A CN106560933 A CN 106560933A
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CN
China
Prior art keywords
light
fluorescence
emitting device
led chip
catoptric arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610033451.4A
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English (en)
Chinese (zh)
Inventor
陈杰
王琮玺
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Maven Optronics Co Ltd
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Maven Optronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Maven Optronics Co Ltd filed Critical Maven Optronics Co Ltd
Priority to US15/280,927 priority Critical patent/US10763404B2/en
Priority to EP16192043.4A priority patent/EP3154095B1/en
Publication of CN106560933A publication Critical patent/CN106560933A/zh
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0041Processes relating to semiconductor body packages relating to wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0058Processes relating to semiconductor body packages relating to optical field-shaping elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
CN201610033451.4A 2015-10-05 2016-01-19 具导角反射结构的发光装置及其制造方法 Pending CN106560933A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US15/280,927 US10763404B2 (en) 2015-10-05 2016-09-29 Light emitting device with beveled reflector and manufacturing method of the same
EP16192043.4A EP3154095B1 (en) 2015-10-05 2016-10-03 Light emitting device with beveled reflector and manufacturing method of the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW104132711A TWI677114B (zh) 2015-10-05 2015-10-05 具導角反射結構的發光裝置
TW104132711 2015-10-05

Publications (1)

Publication Number Publication Date
CN106560933A true CN106560933A (zh) 2017-04-12

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CN201610033451.4A Pending CN106560933A (zh) 2015-10-05 2016-01-19 具导角反射结构的发光装置及其制造方法

Country Status (4)

Country Link
JP (1) JP6599295B2 (ko)
KR (2) KR20170040761A (ko)
CN (1) CN106560933A (ko)
TW (1) TWI677114B (ko)

Cited By (12)

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CN107039572A (zh) * 2016-02-03 2017-08-11 行家光电股份有限公司 具非对称性光形的发光装置及其制造方法
CN108279528A (zh) * 2018-01-17 2018-07-13 惠州市华星光电技术有限公司 一种背光源
US10230030B2 (en) 2016-01-28 2019-03-12 Maven Optronics Co., Ltd. Light emitting device with asymmetrical radiation pattern and manufacturing method of the same
CN109494289A (zh) * 2017-09-11 2019-03-19 行家光电股份有限公司 应用量子点色彩转换的发光装置及其制造方法
TWI658610B (zh) * 2017-09-08 2019-05-01 Maven Optronics Co., Ltd. 應用量子點色彩轉換之發光裝置及其製造方法
CN109994590A (zh) * 2019-04-11 2019-07-09 中山市立体光电科技有限公司 一种红光led封装器件及其制作方法
CN110176529A (zh) * 2018-02-20 2019-08-27 晶元光电股份有限公司 发光元件及其制作方法
CN111162151A (zh) * 2018-11-07 2020-05-15 深圳市聚飞光电股份有限公司 一种led芯片封装方法及led灯珠
CN111162156A (zh) * 2018-11-07 2020-05-15 深圳市聚飞光电股份有限公司 一种led芯片封装方法及led灯珠
US10879434B2 (en) 2017-09-08 2020-12-29 Maven Optronics Co., Ltd. Quantum dot-based color-converted light emitting device and method for manufacturing the same
CN114335306A (zh) * 2021-12-13 2022-04-12 深圳市穗晶光电股份有限公司 一种新型白光led芯片
CN117153995A (zh) * 2023-10-30 2023-12-01 罗化芯显示科技开发(江苏)有限公司 一种led封装膜层及led封装结构

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US10522728B2 (en) 2017-01-26 2019-12-31 Maven Optronics Co., Ltd. Beveled chip reflector for chip-scale packaging light-emitting device and manufacturing method of the same
JP6729525B2 (ja) * 2017-09-14 2020-07-22 日亜化学工業株式会社 発光装置の製造方法
JP7174215B2 (ja) * 2017-09-29 2022-11-17 日亜化学工業株式会社 発光装置の製造方法及び発光装置
DE102018126783A1 (de) 2017-10-26 2019-05-02 Epistar Corporation Lichtemittierende Vorrichtung
KR20190046392A (ko) * 2017-10-26 2019-05-07 루미마이크로 주식회사 발광 패키지
KR102530755B1 (ko) * 2017-12-07 2023-05-10 삼성전자주식회사 광 반사 패턴 및 파장 변환 층을 갖는 발광 소자
US10461231B2 (en) * 2018-02-27 2019-10-29 Lumens Co., Ltd. Method for fabricating LED package
JP6576581B1 (ja) * 2018-03-29 2019-09-18 ルーメンス カンパニー リミテッド サイドビューledパッケージ及びサイドビューledモジュール
KR102621850B1 (ko) * 2018-03-29 2024-01-08 주식회사 루멘스 사이드뷰 엘이디 패키지 및 사이드뷰 엘이디 모듈
KR102567568B1 (ko) * 2018-04-06 2023-08-16 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 패키지
JP6848997B2 (ja) * 2018-04-11 2021-03-24 日亜化学工業株式会社 発光装置
US10553768B2 (en) 2018-04-11 2020-02-04 Nichia Corporation Light-emitting device
JP7133973B2 (ja) * 2018-05-10 2022-09-09 スタンレー電気株式会社 半導体発光装置
JP2019201089A (ja) * 2018-05-15 2019-11-21 マブン オプトロニックス カンパニー リミテッドMaven Optronics Co., Ltd. チップスケールパッケージング発光素子の斜角チップ反射器およびその製造方法
JP7054005B2 (ja) * 2018-09-28 2022-04-13 日亜化学工業株式会社 発光装置
KR102101346B1 (ko) * 2018-11-19 2020-05-27 (주)호전에이블 Led 플립칩 어레이 및 그 결합방법
WO2020153191A1 (ja) 2019-01-25 2020-07-30 ソニー株式会社 発光デバイスおよび画像表示装置
KR102131666B1 (ko) 2019-11-08 2020-07-08 주식회사 위드플러스 발포잉크 리플렉터 및 이를 인쇄방식으로 인쇄회로기판에 형성하는 방법
KR102096668B1 (ko) 2019-12-24 2020-04-03 (주)코리아시스템 발광 디바이스
JP7189451B2 (ja) 2020-06-30 2022-12-14 日亜化学工業株式会社 発光モジュール、液晶表示装置
KR102607323B1 (ko) * 2020-08-28 2023-11-29 니치아 카가쿠 고교 가부시키가이샤 발광 장치
JP7328557B2 (ja) 2020-11-30 2023-08-17 日亜化学工業株式会社 光源、光源装置および光源の製造方法

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Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10707391B2 (en) 2016-01-28 2020-07-07 Maven Optronics Co., Ltd. Light emitting device with asymmetrical radiation pattern and manufacturing method of the same
US10230030B2 (en) 2016-01-28 2019-03-12 Maven Optronics Co., Ltd. Light emitting device with asymmetrical radiation pattern and manufacturing method of the same
CN107039572B (zh) * 2016-02-03 2019-05-10 行家光电股份有限公司 具非对称性光形的发光装置及其制造方法
CN107039572A (zh) * 2016-02-03 2017-08-11 行家光电股份有限公司 具非对称性光形的发光装置及其制造方法
TWI658610B (zh) * 2017-09-08 2019-05-01 Maven Optronics Co., Ltd. 應用量子點色彩轉換之發光裝置及其製造方法
US10879434B2 (en) 2017-09-08 2020-12-29 Maven Optronics Co., Ltd. Quantum dot-based color-converted light emitting device and method for manufacturing the same
CN109494289A (zh) * 2017-09-11 2019-03-19 行家光电股份有限公司 应用量子点色彩转换的发光装置及其制造方法
CN108279528A (zh) * 2018-01-17 2018-07-13 惠州市华星光电技术有限公司 一种背光源
CN110176529B (zh) * 2018-02-20 2022-03-08 晶元光电股份有限公司 发光元件及其制作方法
CN110176529A (zh) * 2018-02-20 2019-08-27 晶元光电股份有限公司 发光元件及其制作方法
CN111162156A (zh) * 2018-11-07 2020-05-15 深圳市聚飞光电股份有限公司 一种led芯片封装方法及led灯珠
CN111162151A (zh) * 2018-11-07 2020-05-15 深圳市聚飞光电股份有限公司 一种led芯片封装方法及led灯珠
CN109994590A (zh) * 2019-04-11 2019-07-09 中山市立体光电科技有限公司 一种红光led封装器件及其制作方法
CN114335306A (zh) * 2021-12-13 2022-04-12 深圳市穗晶光电股份有限公司 一种新型白光led芯片
CN117153995A (zh) * 2023-10-30 2023-12-01 罗化芯显示科技开发(江苏)有限公司 一种led封装膜层及led封装结构

Also Published As

Publication number Publication date
TWI677114B (zh) 2019-11-11
KR102339021B1 (ko) 2021-12-15
KR20170040761A (ko) 2017-04-13
JP2017108111A (ja) 2017-06-15
JP6599295B2 (ja) 2019-10-30
TW201714329A (zh) 2017-04-16
KR20180127292A (ko) 2018-11-28

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Application publication date: 20170412