CN107507899B - 单面发光csp光源制造方法 - Google Patents
单面发光csp光源制造方法 Download PDFInfo
- Publication number
- CN107507899B CN107507899B CN201710700889.8A CN201710700889A CN107507899B CN 107507899 B CN107507899 B CN 107507899B CN 201710700889 A CN201710700889 A CN 201710700889A CN 107507899 B CN107507899 B CN 107507899B
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- luminescence chip
- glue
- light transmission
- light source
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 230000003760 hair shine Effects 0.000 title claims description 10
- 238000004020 luminiscence type Methods 0.000 claims abstract description 101
- 239000003292 glue Substances 0.000 claims abstract description 56
- 230000005540 biological transmission Effects 0.000 claims abstract description 46
- 239000012790 adhesive layer Substances 0.000 claims abstract description 43
- 238000002955 isolation Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229920000297 Rayon Polymers 0.000 claims description 11
- 239000010410 layer Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 239000004816 latex Substances 0.000 claims description 4
- 229920000126 latex Polymers 0.000 claims description 4
- 239000011265 semifinished product Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000000741 silica gel Substances 0.000 description 7
- 229910002027 silica gel Inorganic materials 0.000 description 7
- 239000000843 powder Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000004446 light reflex Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Printing Methods (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710700889.8A CN107507899B (zh) | 2017-08-16 | 2017-08-16 | 单面发光csp光源制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710700889.8A CN107507899B (zh) | 2017-08-16 | 2017-08-16 | 单面发光csp光源制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107507899A CN107507899A (zh) | 2017-12-22 |
CN107507899B true CN107507899B (zh) | 2019-11-15 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201710700889.8A Active CN107507899B (zh) | 2017-08-16 | 2017-08-16 | 单面发光csp光源制造方法 |
Country Status (1)
Country | Link |
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CN (1) | CN107507899B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108281531A (zh) * | 2018-01-19 | 2018-07-13 | 昆山琉明光电有限公司 | 一种csp led封装方法 |
CN108447963A (zh) * | 2018-04-28 | 2018-08-24 | 中国人民大学 | 一种晶体发光的csp光源结构及制备方法 |
CN109273579B (zh) * | 2018-11-22 | 2022-04-22 | 江西省晶能半导体有限公司 | Led灯珠制备方法 |
CN111312866A (zh) * | 2018-12-12 | 2020-06-19 | 蚌埠三颐半导体有限公司 | 发光二极管芯片的封装方法、封装结构 |
CN109830474B (zh) * | 2018-12-17 | 2023-07-11 | 江西省晶能半导体有限公司 | 彩光led芯片制备方法及彩光led灯珠制备方法 |
CN110854259A (zh) * | 2019-11-27 | 2020-02-28 | 福建天电光电有限公司 | 一种新型单面发光led的制造方法 |
CN113823726B (zh) * | 2021-01-21 | 2024-02-23 | 江苏欧密格光电科技股份有限公司 | 一种csp光源及其制备方法 |
CN116565078B (zh) * | 2023-07-07 | 2023-09-15 | 天津德高化成新材料股份有限公司 | 一种适用于大功率单面发光的白光csp及其封装方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101123286A (zh) * | 2006-08-09 | 2008-02-13 | 刘胜 | 发光二极管封装结构和方法 |
CN103887410B (zh) * | 2012-12-21 | 2017-02-01 | 展晶科技(深圳)有限公司 | 发光二极管制造方法 |
CN105449080B (zh) * | 2015-12-31 | 2018-08-28 | 鸿利智汇集团股份有限公司 | 用正装芯片成型csp led的方法和成型倒装芯片的方法及csp led |
CN105895781A (zh) * | 2016-06-02 | 2016-08-24 | 深圳市晶瓷光电有限公司 | 一种蓝光led倒装芯片的封装结构和封装方法 |
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2017
- 2017-08-16 CN CN201710700889.8A patent/CN107507899B/zh active Active
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Publication number | Publication date |
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CN107507899A (zh) | 2017-12-22 |
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Address after: 330012 No.199, Hujia Road, Changdong Industrial Park, Qingshanhu District, Nanchang City, Jiangxi Province (office building) (1st-3rd floor) Patentee after: Jiangxi zhaochi Guangyuan Technology Co.,Ltd. Address before: 518000 zhaochi Innovation Industrial Park, No.1, LiLang Road, xialilang community, Nanwan street, Longgang District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN MTC OPTRONICS Co.,Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20210301 Address after: No. 199, Hujia Road, Qingshanhu District, Nanchang City, Jiangxi Province, 330000 Patentee after: JIANGXI ZHAOCHI PHOTOELECTRIC Co.,Ltd. Address before: 330012 No.199, Hujia Road, Changdong Industrial Park, Qingshanhu District, Nanchang City, Jiangxi Province (office building) (1st-3rd floor) Patentee before: Jiangxi zhaochi Guangyuan Technology Co.,Ltd. |
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