TWI677114B - 具導角反射結構的發光裝置 - Google Patents
具導角反射結構的發光裝置 Download PDFInfo
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- TWI677114B TWI677114B TW104132711A TW104132711A TWI677114B TW I677114 B TWI677114 B TW I677114B TW 104132711 A TW104132711 A TW 104132711A TW 104132711 A TW104132711 A TW 104132711A TW I677114 B TWI677114 B TW I677114B
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- Prior art keywords
- light
- fluorescent
- emitting device
- led chip
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- 239000000463 material Substances 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 20
- 229920005989 resin Polymers 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 229920001296 polysiloxane Polymers 0.000 claims description 4
- 239000004954 Polyphthalamide Substances 0.000 claims description 3
- 229920006375 polyphtalamide Polymers 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052582 BN Inorganic materials 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 239000003822 epoxy resin Substances 0.000 claims 1
- TWMKXPBVMFGBRH-UHFFFAOYSA-N methanol;terephthalic acid Chemical compound OC.OC.OC(=O)C1=CC=C(C(O)=O)C=C1 TWMKXPBVMFGBRH-UHFFFAOYSA-N 0.000 claims 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- REIDAMBAPLIATC-UHFFFAOYSA-N 4-methoxycarbonylbenzoic acid Chemical compound COC(=O)C1=CC=C(C(O)=O)C=C1 REIDAMBAPLIATC-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
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- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104132711A TWI677114B (zh) | 2015-10-05 | 2015-10-05 | 具導角反射結構的發光裝置 |
| CN201610033451.4A CN106560933A (zh) | 2015-10-05 | 2016-01-19 | 具导角反射结构的发光装置及其制造方法 |
| US15/280,927 US10763404B2 (en) | 2015-10-05 | 2016-09-29 | Light emitting device with beveled reflector and manufacturing method of the same |
| EP16192043.4A EP3154095B1 (en) | 2015-10-05 | 2016-10-03 | Light emitting device with beveled reflector and manufacturing method of the same |
| KR1020160127825A KR20170040761A (ko) | 2015-10-05 | 2016-10-04 | 경사 반사기를 갖는 발광 디바이스 및 그 제조 방법 |
| JP2016197250A JP6599295B2 (ja) | 2015-10-05 | 2016-10-05 | 斜角反射体を備えた発光素子およびその製造方法 |
| KR1020180144254A KR102339021B1 (ko) | 2015-10-05 | 2018-11-21 | 경사 반사기를 갖는 발광 디바이스 및 그 제조 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104132711A TWI677114B (zh) | 2015-10-05 | 2015-10-05 | 具導角反射結構的發光裝置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201714329A TW201714329A (zh) | 2017-04-16 |
| TWI677114B true TWI677114B (zh) | 2019-11-11 |
Family
ID=58485514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104132711A TWI677114B (zh) | 2015-10-05 | 2015-10-05 | 具導角反射結構的發光裝置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6599295B2 (ko) |
| KR (2) | KR20170040761A (ko) |
| CN (1) | CN106560933A (ko) |
| TW (1) | TWI677114B (ko) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107039572B (zh) * | 2016-02-03 | 2019-05-10 | 行家光电股份有限公司 | 具非对称性光形的发光装置及其制造方法 |
| US10230030B2 (en) | 2016-01-28 | 2019-03-12 | Maven Optronics Co., Ltd. | Light emitting device with asymmetrical radiation pattern and manufacturing method of the same |
| US10522728B2 (en) | 2017-01-26 | 2019-12-31 | Maven Optronics Co., Ltd. | Beveled chip reflector for chip-scale packaging light-emitting device and manufacturing method of the same |
| US10879434B2 (en) | 2017-09-08 | 2020-12-29 | Maven Optronics Co., Ltd. | Quantum dot-based color-converted light emitting device and method for manufacturing the same |
| CN109494289B (zh) * | 2017-09-11 | 2020-08-11 | 行家光电股份有限公司 | 应用量子点色彩转换的发光装置及其制造方法 |
| TWI658610B (zh) * | 2017-09-08 | 2019-05-01 | Maven Optronics Co., Ltd. | 應用量子點色彩轉換之發光裝置及其製造方法 |
| JP6729525B2 (ja) * | 2017-09-14 | 2020-07-22 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| JP7174215B2 (ja) * | 2017-09-29 | 2022-11-17 | 日亜化学工業株式会社 | 発光装置の製造方法及び発光装置 |
| DE102018126783A1 (de) | 2017-10-26 | 2019-05-02 | Epistar Corporation | Lichtemittierende Vorrichtung |
| KR20190046392A (ko) * | 2017-10-26 | 2019-05-07 | 루미마이크로 주식회사 | 발광 패키지 |
| KR102530755B1 (ko) * | 2017-12-07 | 2023-05-10 | 삼성전자주식회사 | 광 반사 패턴 및 파장 변환 층을 갖는 발광 소자 |
| CN108279528B (zh) * | 2018-01-17 | 2021-05-28 | 惠州市华星光电技术有限公司 | 一种背光源 |
| US10833233B2 (en) * | 2018-02-20 | 2020-11-10 | Epistar Corporation | Light-emitting device having package structure with quantum dot material and manufacturing method thereof |
| US10461231B2 (en) * | 2018-02-27 | 2019-10-29 | Lumens Co., Ltd. | Method for fabricating LED package |
| JP6576581B1 (ja) * | 2018-03-29 | 2019-09-18 | ルーメンス カンパニー リミテッド | サイドビューｌｅｄパッケージ及びサイドビューｌｅｄモジュール |
| KR102621850B1 (ko) * | 2018-03-29 | 2024-01-08 | 주식회사 루멘스 | 사이드뷰 엘이디 패키지 및 사이드뷰 엘이디 모듈 |
| KR102567568B1 (ko) * | 2018-04-06 | 2023-08-16 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 패키지 |
| JP6848997B2 (ja) * | 2018-04-11 | 2021-03-24 | 日亜化学工業株式会社 | 発光装置 |
| US10553768B2 (en) | 2018-04-11 | 2020-02-04 | Nichia Corporation | Light-emitting device |
| JP7133973B2 (ja) * | 2018-05-10 | 2022-09-09 | スタンレー電気株式会社 | 半導体発光装置 |
| JP2019201089A (ja) * | 2018-05-15 | 2019-11-21 | マブン オプトロニックス カンパニー リミテッドＭａｖｅｎ Ｏｐｔｒｏｎｉｃｓ Ｃｏ．， Ｌｔｄ． | チップスケールパッケージング発光素子の斜角チップ反射器およびその製造方法 |
| JP7054005B2 (ja) * | 2018-09-28 | 2022-04-13 | 日亜化学工業株式会社 | 発光装置 |
| CN111162151A (zh) * | 2018-11-07 | 2020-05-15 | 深圳市聚飞光电股份有限公司 | 一种led芯片封装方法及led灯珠 |
| CN111162156A (zh) * | 2018-11-07 | 2020-05-15 | 深圳市聚飞光电股份有限公司 | 一种led芯片封装方法及led灯珠 |
| KR102101346B1 (ko) * | 2018-11-19 | 2020-05-27 | (주)호전에이블 | Led 플립칩 어레이 및 그 결합방법 |
| WO2020153191A1 (ja) | 2019-01-25 | 2020-07-30 | ソニー株式会社 | 発光デバイスおよび画像表示装置 |
| CN109994590A (zh) * | 2019-04-11 | 2019-07-09 | 中山市立体光电科技有限公司 | 一种红光led封装器件及其制作方法 |
| KR102131666B1 (ko) | 2019-11-08 | 2020-07-08 | 주식회사 위드플러스 | 발포잉크 리플렉터 및 이를 인쇄방식으로 인쇄회로기판에 형성하는 방법 |
| KR102096668B1 (ko) | 2019-12-24 | 2020-04-03 | (주)코리아시스템 | 발광 디바이스 |
| JP7189451B2 (ja) | 2020-06-30 | 2022-12-14 | 日亜化学工業株式会社 | 発光モジュール、液晶表示装置 |
| KR102607323B1 (ko) * | 2020-08-28 | 2023-11-29 | 니치아 카가쿠 고교 가부시키가이샤 | 발광 장치 |
| JP7328557B2 (ja) | 2020-11-30 | 2023-08-17 | 日亜化学工業株式会社 | 光源、光源装置および光源の製造方法 |
| CN114335306A (zh) * | 2021-12-13 | 2022-04-12 | 深圳市穗晶光电股份有限公司 | 一种新型白光led芯片 |
| CN117153995A (zh) * | 2023-10-30 | 2023-12-01 | 罗化芯显示科技开发(江苏)有限公司 | 一种led封装膜层及led封装结构 |
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| US20090321758A1 (en) * | 2008-06-25 | 2009-12-31 | Wen-Huang Liu | Led with improved external light extraction efficiency |
| US20100311193A1 (en) * | 2009-06-03 | 2010-12-09 | Hsuan-Chih Lin | Led module fabrication method |
| US20110291149A1 (en) * | 2010-05-26 | 2011-12-01 | Kabushiki Kaisha Toshiba | Light emitting device |
| US20110309388A1 (en) * | 2010-06-16 | 2011-12-22 | Ito Kosaburo | Semiconductor light-emitting device and manufacturing method |
| TW201205899A (en) * | 2010-07-30 | 2012-02-01 | Advanced Optoelectronic Tech | Light emitting device package and method of manufacturing the same |
| TW201225348A (en) * | 2010-12-03 | 2012-06-16 | Advanced Optoelectronic Tech | LED and method for manufacturing the same |
| JP2013077679A (ja) * | 2011-09-30 | 2013-04-25 | Citizen Electronics Co Ltd | 半導体発光装置とその製造方法 |
| US20130113010A1 (en) * | 2010-04-30 | 2013-05-09 | Osram Opto Semiconductors Gmbh | Optoelectronic Component and Method for Producing an Optoelectronic Component |
| TW201344987A (zh) * | 2012-04-27 | 2013-11-01 | Advanced Optoelectronic Tech | 發光二極體封裝結構的製造方法 |
| TW201408758A (zh) * | 2012-07-20 | 2014-03-01 | Hitachi Chemical Co Ltd | 銀硫化防止材料、銀硫化防止膜之形成方法、發光裝置之製造方法及發光裝置 |
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| KR20120061376A (ko) * | 2010-12-03 | 2012-06-13 | 삼성엘이디 주식회사 | 반도체 발광 소자에 형광체를 도포하는 방법 |
| US9269873B2 (en) * | 2012-03-13 | 2016-02-23 | Citizen Holdings Co., Ltd. | Semiconductor light emitting device and method for manufacturing same |
| WO2014091914A1 (ja) * | 2012-12-10 | 2014-06-19 | シチズンホールディングス株式会社 | Ｌｅｄ装置及びその製造方法 |
| JP6323176B2 (ja) * | 2014-05-30 | 2018-05-16 | 日亜化学工業株式会社 | 発光装置の製造方法 |
-
2015
- 2015-10-05 TW TW104132711A patent/TWI677114B/zh active
-
2016
- 2016-01-19 CN CN201610033451.4A patent/CN106560933A/zh active Pending
- 2016-10-04 KR KR1020160127825A patent/KR20170040761A/ko active Application Filing
- 2016-10-05 JP JP2016197250A patent/JP6599295B2/ja active Active
-
2018
- 2018-11-21 KR KR1020180144254A patent/KR102339021B1/ko active IP Right Grant
Patent Citations (18)
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| US20090321758A1 (en) * | 2008-06-25 | 2009-12-31 | Wen-Huang Liu | Led with improved external light extraction efficiency |
| US20100311193A1 (en) * | 2009-06-03 | 2010-12-09 | Hsuan-Chih Lin | Led module fabrication method |
| US20130113010A1 (en) * | 2010-04-30 | 2013-05-09 | Osram Opto Semiconductors Gmbh | Optoelectronic Component and Method for Producing an Optoelectronic Component |
| JP2013526047A (ja) * | 2010-04-30 | 2013-06-20 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクスデバイスおよびオプトエレクトロニクスデバイスを製造する方法 |
| US20110291149A1 (en) * | 2010-05-26 | 2011-12-01 | Kabushiki Kaisha Toshiba | Light emitting device |
| US20110309388A1 (en) * | 2010-06-16 | 2011-12-22 | Ito Kosaburo | Semiconductor light-emitting device and manufacturing method |
| TW201205899A (en) * | 2010-07-30 | 2012-02-01 | Advanced Optoelectronic Tech | Light emitting device package and method of manufacturing the same |
| TW201225348A (en) * | 2010-12-03 | 2012-06-16 | Advanced Optoelectronic Tech | LED and method for manufacturing the same |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN106560933A (zh) | 2017-04-12 |
| KR102339021B1 (ko) | 2021-12-15 |
| KR20170040761A (ko) | 2017-04-13 |
| JP2017108111A (ja) | 2017-06-15 |
| JP6599295B2 (ja) | 2019-10-30 |
| TW201714329A (zh) | 2017-04-16 |
| KR20180127292A (ko) | 2018-11-28 |
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