201225348 六、發明說明: 【發明所屬之技術領威】 _]本發明涉及-種發光二極體及製造方法。 【先前技術】 闺-般的發光二極體是藉由榮光層將發光二極體晶片所發 出的光線轉換成具有特定波長的出射紐。然而’一般 發光二極體中的螢光層是設置在反射杯内並覆蓋發光二 極體晶片的,此種結構中的發光二極體晶片與榮光層中 的螢光材料距離不一,容易造庚瀑今不均勻而景夕響出光201225348 VI. Description of the Invention: [Technology Leading to the Invention] The present invention relates to a light-emitting diode and a method of manufacturing the same. [Prior Art] A general-purpose light-emitting diode converts light emitted from a light-emitting diode wafer into an exit wavelength having a specific wavelength by a glory layer. However, the fluorescent layer in the general light-emitting diode is disposed in the reflective cup and covers the light-emitting diode wafer. The light-emitting diode wafer in this structure is different from the fluorescent material in the glory layer, and is easy to use. The Geng Waterfall is uneven now and the scenery is shining
..... .... ....... 效果。 【發明内容】 [0003] 鑒於此,有必要提供一種可避免混光不均勻的發光二極 體及製造方法。 [0004] 一種發光二極體’其包括基板、設置在:讀基板上的發光 —極體晶片及設置在該基板上隹圍繞该發光一極體晶片 的反射杯。所述發光二極體邁片藉.由設於基板上的電極 與外部電連接。所述:反射杯内填:充:有封裝層’該封裝層 於遠離發光二極體晶片的一端藉由加熱沉澱形成有層狀 的螢光區域,該螢光區域將發光二極體晶片所發出的光 線轉換為特定的波長而向外輻射。 [0005] 一種發光二極體製造方法,該製造方法包括如下步驟: [0006] 提供基板及反射杯,該基板相對的兩端分別設置有第一 電極及第二電極,該反射杯沿基板的周緣環繞設置以形 成一容置空間; 099142220 表單編號A0101 第3頁/共21頁 0992073356-0 201225348 [0007] 將發光二極體晶片設置在容置空間内的第一電極上並藉 由導線分別與第一電極和第二電極電連接; [0008] 用内含螢光微粒的封裝材料填充所述容置空間以形成封 裝層; [0009] 密封所述容置空間内的封裝材料; [0010] 將所述發光二極體倒置並加熱被密封的封裝材料,使得 該封裝材料中的螢光微粒沉澱聚集於容置空間遠離發光 二極體晶片一側的開口處形成層狀的螢光區域; [0011] 待所述螢光區域穩定成形後停止加熱並冷卻至室溫以使 所述封裝材料固化。 [0012] 鑒於此,有必要提供一種發光二極體及其製造方法藉由 加熱沉澱的方式將原先散佈於整個封裝層中的螢光微粒 聚集在封裝層的頂端以形成一層狀的螢光區域,使得封 裝層中的螢光微粒與發光二極體晶片的距離大致相同, 從而大大提高整個發光二極體的混光均句度。 【實施方式】 [0013] 如圖1所示,本發明實施方式所提供的發光二極體1包括 一基板10、一第一電極12、一第二電極14、一反射杯16 、一發光二極體晶片15及一封裝層17。所述第一電極12 和第二電極14分別設置在基板10的相對兩側,所述發光 二極體晶片15設置在所述第一電極12上並藉由導線13分 別與第一電極12和第二電極14相連接。所述反射杯16沿 基板1 0的周緣環繞設置並形成一倒錐形的容置空間16a以 將所述發光二極體晶片15圍設於内,所述容置空間16a内 099142220 表單編號A0101 第4頁/共21頁 0992073356-0 201225348 填充封裝材料17a以形成覆蓋發光二極體晶片15的封裝層 17 ° [0014] 具體地,所述基板10包括上表面l〇a、下表面i〇b及側表 面10c。所述上表面i〇a與下表面1〇b平行相對,所述側 表面10c分別與上表面i〇a和下表面丨〇b垂直連接。所述 第一電極12和第二電極14分別由基板10的上表面1〇3的 相對兩端延伸至對應的側表面l〇c及下表面101) ^其中, 所述第一電極12 —直覆蓋至基板1〇的上表面1〇3和下表面 0 1 Ob的中部。 [0015] 所述封裝層17内設置有螢光微粒i8a,該螢光微粒18a聚 集在容置空間16a遠離發光二極體晶片15 —倒的開口處, 以在封裝層17的頂端形成一層密封所述容置空間1 6a的螢 光區域18。所述螢光區域18與封裝層17之間的分隔介面 18b與所述基板10的上表面i〇a平行。所述發光二極體晶 片15所發出的光線經過該螢光區域18時由螢光微粒18a轉 換為特定的波長並向外輻射。所述封裝層17可為透光材 ❹ 質’例如:聚甲...基丙烤酸甲醋樹脂、曱基丙稀酸樹脂、 聚丙烯酸樹脂、聚碳酸酯或聚乙烯樹脂等。所述螢光微 粒18a的材料可為硫化物、铭酸鹽、氧化物、碎酸鹽或氮 化物。具體地,所述螢光微粒18a的化學成分為:..... .... ....... effect. SUMMARY OF THE INVENTION [0003] In view of the above, it is necessary to provide a light-emitting diode that can avoid uneven light mixing and a method of fabricating the same. [0004] A light-emitting diode' includes a substrate, a light-emitting body wafer disposed on the read substrate, and a reflective cup disposed on the substrate and surrounding the light-emitting monolithic wafer. The light-emitting diode chip is electrically connected to the outside by an electrode provided on the substrate. The: reflective cup filling: charging: having an encapsulating layer, the encapsulating layer is formed by heating precipitation to form a layered fluorescent region, which is a light emitting diode wafer The emitted light is converted to a specific wavelength and radiated outward. [0005] A method for manufacturing a light emitting diode, the manufacturing method comprising the following steps: [0006] providing a substrate and a reflective cup, wherein opposite ends of the substrate are respectively provided with a first electrode and a second electrode, and the reflective cup is along the substrate The circumference is arranged to form an accommodating space; 099142220 Form No. A0101 Page 3 / Total 21 Page 0992073356-0 201225348 [0007] The LED chip is disposed on the first electrode in the accommodating space and is respectively separated by wires Electrically connecting with the first electrode and the second electrode; [0008] filling the accommodating space with an encapsulating material containing fluorescent particles to form an encapsulation layer; [0009] sealing the encapsulation material in the accommodating space; [0010 Inverting the light emitting diode and heating the sealed encapsulating material, so that the fluorescent particles in the encapsulating material are deposited and accumulated in an opening of the accommodating space away from the side of the illuminating diode chip to form a layered fluorescing region. [0011] After the fluorescent region is stably formed, the heating is stopped and cooled to room temperature to cure the encapsulating material. [0012] In view of the above, it is necessary to provide a light-emitting diode and a method for fabricating the same by collecting the fluorescent particles originally dispersed in the entire encapsulation layer at the top of the encapsulation layer by heating precipitation to form a layer of fluorescent light. The region is such that the distance between the phosphor particles in the encapsulation layer and the LED chip is substantially the same, thereby greatly increasing the mixed light uniformity of the entire LED. [Embodiment] As shown in FIG. 1, a light-emitting diode 1 according to an embodiment of the present invention includes a substrate 10, a first electrode 12, a second electrode 14, a reflective cup 16, and a light-emitting diode. The polar body chip 15 and an encapsulation layer 17. The first electrode 12 and the second electrode 14 are respectively disposed on opposite sides of the substrate 10. The light emitting diode chip 15 is disposed on the first electrode 12 and respectively connected to the first electrode 12 by the wire 13 The second electrodes 14 are connected. The reflective cup 16 is disposed around the periphery of the substrate 10 and defines a reverse-conical accommodating space 16a for enclosing the LED array 15 in the accommodating space 16a. Form number A0101 Page 4 / 21 pages 0992073356-0 201225348 Filling the encapsulation material 17a to form an encapsulation layer covering the LED array 15 [0014] Specifically, the substrate 10 includes an upper surface 10a, a lower surface i〇 b and side surface 10c. The upper surface i 〇 a is parallel to the lower surface 1 〇 b, and the side surface 10 c is perpendicularly connected to the upper surface i 〇 a and the lower surface 丨〇 b, respectively. The first electrode 12 and the second electrode 14 are respectively extended from opposite ends of the upper surface 1〇3 of the substrate 10 to the corresponding side surface 10c and the lower surface 101). wherein the first electrode 12 is straight Covering the upper surface 1〇3 of the substrate 1〇 and the middle portion of the lower surface 0 1 Ob. [0015] The encapsulating layer 17 is provided with fluorescent particles i8a, and the fluorescent particles 18a are gathered at an opening of the accommodating space 16a away from the LED substrate 15 to form a seal at the top of the encapsulating layer 17. The fluorescent region 18 of the accommodation space 16a. The partitioning interface 18b between the phosphor region 18 and the encapsulation layer 17 is parallel to the upper surface i〇a of the substrate 10. The light emitted by the light-emitting diode chip 15 is converted by the fluorescent particles 18a to a specific wavelength and radiated outward when passing through the fluorescent region 18. The encapsulating layer 17 may be a light transmissive material such as polymethyl methacrylate resin, mercapto acrylate resin, polyacryl resin, polycarbonate or polyethylene resin. The material of the fluorescent particles 18a may be a sulfide, a salt, an oxide, a salt or a nitride. Specifically, the chemical composition of the fluorescent particles 18a is:
Ca Ali2〇 :Mn ' (Ca, Sr,Ba)A1 〇0 ·Eu ' z y 2 4 Y3Al5〇12:Ce3+(YAG) 、 Tb3A15〇12:Ce3+(TAG)、Ca Ali2〇 :Mn ' (Ca, Sr,Ba)A1 〇0 ·Eu ' z y 2 4 Y3Al5〇12:Ce3+(YAG) , Tb3A15〇12:Ce3+(TAG),
BaMgAlio〇17:Eu2+(Mn2+) > Ca0SiCN0:Eu2+ ' (Ca,Sr,Ba)S:Eu2+、(Mg,Ca,Sr,Ba)2Si〇4:Eu2+、 (Mg,Ca,Sr,Ba)3Si2〇7:Eu2+、Ca8Mg(Si〇4)4C12:Eu2 + 099142220 表單編號A0101 第5頁/共21頁 0992073356-0 201225348 、Y2〇2S:Eu3+、CdS、CdTe或CdSe。 [0016] [0017] [0018] [0019] [0020] [0021] 099142220 如圖2所示,為本發明所提供的一種製造所述發光二極體 1的方法流程圖,該製造方法包括如下步驟: 步驟S801 ’請一併參閱圖3,提供如上所述的基板1〇、第 一 t極12、第二電極14及反射杯16。該第一電極12和第 二電極14分別設置在所述基板的相對兩側,並由該基 板10的上表面10a延伸至對應的側表面1〇c及下表面1〇b 。所述反射杯1 6沿基板1 〇的周緣環繞設置並形成一倒錐 形的容置空間16a。所述第一電極12和第二電極14位於基 板1 0的上表面1 0 a的其中一部分分別收容在所述容置空間 16a的底部。 步驟S8G2 ’請-併參閱圖4,將—發光二極體晶片15設置 在所述容置空間16a内的第—電極12上,並藉由設置導線 13使該發光二極體晶片15分別與基板1〇上的第一電極u 和第二電極14電連接。 步驟S803,請—併參閱圖5,使用内含螢光微粒—的封 裝材料17a將所述容置空間16a填滿以形成_覆蓋發光二 極體晶片15的封裝層I?。 轉S804,請一併參閱圖6,提供一密封模具2,該密封 ^具2的-端開設有敞口的容置槽2〇 ;將所述密封模具2 从 射杯1 6上以使反射杯16的頂部被所述容置槽2 〇 所遮罩從而密封住容置空間16a内的封裝材料17a。曰 ’如圖7所示,所述容置槽20的底部可以設置一層 防黏隔_2,所述㈣模具2與封裝材料 曰 0992073356-0 表單編號雌 ,6ι/#21ι ΠΙθ* 201225348 [0022] Ο [0023] [0024] Ο [0025] [0026] 099142220 該防黏隔離膜22相分隔,以方 具2與封裝材料ΠΜ目分離。所將密封模 所述防黏隔離膜22由高分1 材料哀成,例如:聚四氟乙烯破璃布。 步驟襲,請-併參嶋,將所述密封模具續發光一 極體1 一併倒置’亚错由—加熱器3對所述密封模具2進行 加熱’使得被㈣㈣料料17a成為㈣並保持 時間;此時,封裝材料17a内的螢光微粒^在自身重力的 的作用下賴«集在所述容置空間…祕發光二極體 晶片15一側的開口處以形成-層狀的螢光區域18。 步哪m,待沉澂的螢光區域18穩定成形後停止加熱, 並冷卻至室溫錢所述封料㈣㈣化。糾,所述封 裝材料17a位於容置空間l6a遠離(發光二極體晶片15的一 側形成一穩定的層狀螢光區域18。 步驟S807,請-併參閱圖9,將所述密封模具2與發光二 極體1分離’從而形成本發明所提供的發光二極體1結構 〇 本發月所提供的發光二極體丨及其製造方法藉由加熱沉澱 的方式將原先散佈於整個封裝層17中的螢光微粒18a聚集 在封裝層17的頂端以形成—層狀的螢光區域18,使得封 裝層17中的螢光微粒18a與發光二極體晶片15的距離大致 相同從而大大提高整個發光二極體1的混光均勻度。 卜’本領域技術人員還可在本發明精神内做其他變化 田然,這些依據本發明精神所做之變化,都應包含在 本發明所要求保護之範圍之内。 表單編號A0101 --- 第7頁/共21頁 0992073356-0 201225348 【圖式簡單說明】 [0027] 圖1為本發明實施方式所提供的發光二極體的結構示意圖 [0028] 圖2為本發明實施方式所提供的發光二極體製造方法的流 程圖。 [0029] 圖3為圖2中所示步驟S801的示意圖。 [0030] 圖4為圖2中所示步驟S802的示意圖。 [0031] 圖5為圖2中所示步驟S803的示意圖。 [0032] 圖6至圖7為圖2中所示步驟S804的示意圖。 [0033] 圖8為圖2中所示步驟S805的示意圖。 [0034] 圖9為圖2中所示步驟S807的示意圖。 【主要元件符號說明】 [0035] 發光二極體 1 [0036] 基板 10 [0037] 上表面 10a [0038] 下表面 10b [0039] 側表面 10c [0040] 第一電極 12 [0041] 導線 13 [0042] 第二電極 14 [0043] 發光二極體晶片 15 表單編號A0101 第8頁/共21頁 099142220 0992073356-0 201225348 LUU44J 反射杯 16 [0045] 容置空間 16a [0046] 封裝層 17 [0047] 封裝材料 17a [0048] 螢光區域 18 [0049] 螢光微粒 18a [0050] 分隔介面 18b [0051] 密封模具 2 [0052] 容置槽 20 [0053] 防黏隔離膜 22BaMgAlio〇17: Eu2+(Mn2+) > Ca0SiCN0:Eu2+ '(Ca,Sr,Ba)S:Eu2+, (Mg,Ca,Sr,Ba)2Si〇4:Eu2+, (Mg,Ca,Sr,Ba)3Si2 〇7: Eu2+, Ca8Mg(Si〇4)4C12:Eu2 + 099142220 Form No. A0101 Page 5 of 21 Page 0992073356-0 201225348, Y2〇2S: Eu3+, CdS, CdTe or CdSe. [0018] [0020] [0020] [0010] [991] 099142220 As shown in FIG. 2, a flow chart of a method for manufacturing the light-emitting diode 1 according to the present invention, the manufacturing method includes the following Step: Step S801 'Please refer to FIG. 3 together to provide the substrate 1 〇, the first t pole 12, the second electrode 14, and the reflective cup 16 as described above. The first electrode 12 and the second electrode 14 are respectively disposed on opposite sides of the substrate, and extend from the upper surface 10a of the substrate 10 to the corresponding side surface 1〇c and the lower surface 1〇b. The reflector cup 16 is circumferentially disposed along the circumference of the substrate 1 并 and forms an inverted cone-shaped accommodating space 16a. A portion of the first electrode 12 and the second electrode 14 located on the upper surface 10 a of the substrate 10 is respectively received at the bottom of the accommodating space 16a. Step S8G2 'please-see and FIG. 4, the light-emitting diode chip 15 is disposed on the first electrode 12 in the accommodating space 16a, and the light-emitting diode chip 15 is respectively provided by providing the wire 13 The first electrode u and the second electrode 14 on the substrate 1 are electrically connected. In step S803, please - and referring to Fig. 5, the accommodating space 16a is filled with a sealing material 17a containing fluorescent particles to form an encapsulating layer I covering the luminescent diode chip 15. Turning to S804, please refer to FIG. 6 together to provide a sealing mold 2, the end of the sealing tool 2 is provided with an open receiving groove 2〇; the sealing mold 2 is placed on the shooting cup 16 for reflection The top of the cup 16 is covered by the accommodating groove 2 从而 to seal the encapsulating material 17a in the accommodating space 16a.曰' As shown in FIG. 7, a bottom layer of the accommodating groove 20 may be provided with a layer of anti-adhesive spacers _2, the (4) mold 2 and the encapsulating material 曰0992073356-0 form number female, 6ι/#21ι ΠΙθ* 201225348 [0022防 [0024] [0025] [0009] 099142220 The anti-adhesion barrier film 22 is separated, and the square 2 is separated from the packaging material. The sealing mold 22 is made of a high-strength material, such as a polytetrafluoroethylene woven cloth. Step, please - and participate in the squeezing, the sealing mold continues to illuminate the polar body 1 and invert the 'sub-fog-heater 3 to heat the sealing mold 2' so that the (four) (four) material 17a becomes (four) and remains At this time, the fluorescent particles in the encapsulating material 17a are placed under the action of their own gravity to form a layered fluorescent light at the opening of the accommodating light-emitting diode chip 15 side. Area 18. Step m, the fluorescent area 18 to be intensively stops forming, stops heating, and cools to room temperature for the sealing material (four) (four). The encapsulation material 17a is located away from the accommodating space l6a (the side of the illuminating diode chip 15 forms a stable layered fluorescing region 18. Step S807, please-see also FIG. Separating from the light-emitting diode 1 to form the structure of the light-emitting diode 1 provided by the present invention. The light-emitting diode body provided by the present invention and the manufacturing method thereof are originally dispersed in the entire encapsulation layer by means of heat precipitation. The phosphor particles 18a in 17 are collected at the top end of the encapsulation layer 17 to form a layered phosphor region 18 such that the distance between the phosphor particles 18a in the encapsulation layer 17 and the LED array 15 is substantially the same, thereby greatly improving the entire The uniformity of light mixing of the light-emitting diodes 1. Those skilled in the art can also make other changes in the spirit of the present invention. These changes according to the spirit of the present invention should be included in the claimed invention. Form No. A0101 --- Page 7 / 21 pages 0992073356-0 201225348 [Simplified Schematic] FIG. 1 is a schematic structural view of a light-emitting diode according to an embodiment of the present invention [0028] Figure 2 is BRIEF DESCRIPTION OF THE DRAWINGS FIG. 3 is a schematic diagram of step S801 shown in FIG. 2. [0030] FIG. 4 is a schematic diagram of step S802 shown in FIG. 2. [0031] 5 is a schematic view of the step S803 shown in Fig. 2. [0032] Fig. 6 to Fig. 7 are schematic views of the step S804 shown in Fig. 2. [0033] Fig. 8 is a schematic view of the step S805 shown in Fig. 2. Fig. 9 is a schematic view of the step S807 shown in Fig. 2. [Main element symbol description] [0035] Light emitting diode 1 [0036] Substrate 10 [0037] Upper surface 10a [0038] Lower surface 10b [0039] Side Surface 10c [0040] First Electrode 12 [0041] Conductor 13 [0042] Second Electrode 14 [0043] Light Emitting Diode Wafer 15 Form No. A0101 Page 8 / Total 21 Page 099142220 0992073356-0 201225348 LUU44J Reflector Cup 16 [ 0045] accommodating space 16a [0046] encapsulating layer 17 [0047] encapsulating material 17a [0048] fluorescent region 18 [0049] luminescent particles 18a [0050] separating interface 18b [0051] sealing mold 2 [0052] accommodating groove 20 [0053] Anti-adhesive separator 22
099142220 表單編號A0101 第9頁/共21頁 0992073356-0099142220 Form No. A0101 Page 9 of 21 0992073356-0