CN106560933A - Light-emitting device with angle-guiding reflection structure and manufacturing method thereof - Google Patents
Light-emitting device with angle-guiding reflection structure and manufacturing method thereof Download PDFInfo
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- CN106560933A CN106560933A CN201610033451.4A CN201610033451A CN106560933A CN 106560933 A CN106560933 A CN 106560933A CN 201610033451 A CN201610033451 A CN 201610033451A CN 106560933 A CN106560933 A CN 106560933A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a light-emitting device with a lead angle reflection structure and a manufacturing method thereof. The light-emitting device comprises an LED chip, a fluorescent structure and a reflecting structure. The fluorescent structure is arranged on the LED chip, the side surface of the fluorescent structure is inclined, and the bottom surface of the fluorescent structure is positioned on the upper surface of the LED chip; the reflecting structure coats the side surface of the LED chip and the side surface of the fluorescent structure to present an inclined lead angle. The invention also provides a manufacturing method for manufacturing the light-emitting device. Therefore, the light-emitting device with the angle guiding reflection structure can increase the light-emitting efficiency, change the light-emitting angle, improve the spatial light uniformity and achieve a small divergence angle with a small packaging size.
Description
Technical field
A kind of relevant light-emitting device of the present invention and its manufacture method, especially in regard to a kind of luminous dress of tool lead angle catoptric arrangement
Put and its manufacture method.
Background technology
LED (light emitting diode) chip is generally utilized to provide illumination or the light source for indicating, and LED core
Piece would generally be placed in an encapsulating structure, also or can by a fluorescent material coat or cover, to become a light-emitting device.
Light-emitting device can obtain good luminous efficiency and specific lighting angle via appropriate design, for example
Support rack type (PLCC) LED that tradition has high economic benefit is encapsulated, and can increase its luminous effect by the design of reflector
Rate, and specific lighting angle is reached, but support rack type LED encapsulation has its congenital restriction, for example：Light is in fluorescence
Travel path difference in glue causes greatly spatial light lack of homogeneity and produces yellow dizzy, lighting area to be much larger than LED core
Piece area and cause that specific direction unit area light intensity (intensity) is low, lighting area big and cause secondary optical lens
It is difficult design, thermal resistance is big and causes radiating to be difficult.Therefore, chip-scale is carried out using LED crystal covered chips (flip chip)
(chip scale) encapsulation to make small size light-emitting device convergence ideal point light source can effectively solving the problems referred to above, and because
The encapsulation of small-size chips level can further reduce production cost, so trend has become the target of industry effort.But work as
During the more beneficial diminution of the size of light-emitting device, large-sized scheme is can be applicable to originally, will become to be difficult to suitable for small size
Light-emitting device in.
In existing small size light-emitting device, because of the restriction of existing process technology, its catoptric arrangement vertically covers glimmering
The light that catoptric arrangement is injected inside fluorescent material is caused by the restriction because of critical angle in the side of photo structure, this framework
Major part is reflected back toward in fluorescent material or LED chip, and the top surface for being difficult to be directed to fluorescence structure is set out with being drawn
Outside electro-optical device, thus result in more light energy and be lost inside light-emitting device, therefore its luminous efficiency still can be further
Lifted.Additionally, current small size light-emitting device there is no effective scheme to adjust lighting angle.
In view of this, there is provided a kind of luminous efficiency for improving light-emitting device, room for promotion optical uniformity, diminution diverging
Angle, light-emitting area convergence ideal point light source, the technical scheme for reducing thermal resistance or adjustable lighting angle, are for this industry
Boundary's problem to be solved.
The content of the invention
One purpose of the present invention is to provide a kind of light-emitting device and its manufacture method, and which can improve the luminous of light-emitting device
Efficiency and space optical uniformity are avoiding yellow dizzy generation, or adjust its lighting angle, at the same have little light-emitting area and
Low thermal resistance.
Another object of the present invention is to provide a kind of light-emitting device and its manufacture method, which can make undersized luminous dress
It is equipped with good luminous efficiency and/or space optical uniformity to avoid yellow dizzy generation, or adjusts its lighting angle.
Be up to above-mentioned purpose, disclosed herein a kind of light-emitting device comprising a LED chip, a fluorescence structure and
One catoptric arrangement.The LED chip have a upper surface, a lower surface relative to the upper surface, one side and
One electrode group, the side are formed between the upper surface and the lower surface, and the electrode group is arranged on the lower surface；Should
Fluorescence structure is arranged in LED chip, and which has a top surface, the bottom surface relative to the top surface and is formed at the top
One side between face and the bottom surface, the wherein top surface are more than the bottom surface, make the side relative to the top surface and the bottom surface
It is presented one skewed, the bottom surface is located on the upper surface of the LED chip；The catoptric arrangement coats the LED chip
Side and the fluorescence structure side.
Be up to above-mentioned purpose, disclosed herein a kind of light-emitting device comprising a LED chip, a transparent configuration and
One catoptric arrangement.The LED chip have a upper surface, a lower surface relative to the upper surface, one side and
One electrode group, the side are formed between the upper surface and the lower surface, and the electrode group is arranged on the lower surface；Should
Transparent configuration is arranged in LED chip, and which has a top surface, the bottom surface relative to the top surface and is formed at the top
One side between face and the bottom surface, the size of the top surface are more than or equal to the size of the bottom surface, and the bottom surface is located at should
On the upper surface of LED chip；The catoptric arrangement coats the side of the LED chip and the side of the transparent configuration,
Wherein, 0.1 times not less than a length of the LED chip of a height of the catoptric arrangement, and it is not more than the LED
5 times of the length of chip.
Be up to above-mentioned purpose, disclosed herein a kind of light-emitting device manufacture method, comprising：Formed and fallen with one
One fluorescence structure of tapered side；The fluorescence structure is arranged in a LED chip, to form a ray structure；
And the side of the ray structure is coated, to form a catoptric arrangement with inverted cone medial surface.
Thereby, light-emitting device and its manufacture method of the invention can provide at following beneficial effect：With lead angle
Catoptric arrangement can make the light of LED chip be more easy to be drawn into outside light-emitting device, can increase luminous efficiency and/or light is equal
Even property；Additionally, the fluorescence structure may be slightly larger than LED chip, thus the light-emitting device for being constituted can have it is undersized
Outward appearance.On the other hand, the fluorescence structure with inclined side is in addition to it easily can make, the inclination angle of inclined side
Degree also can adjust, and then control lighting angle.
It is that above-mentioned purpose, technical characteristic and advantage can be become apparent, is hereafter to coordinate appended with preferred embodiment
Schema is described in detail.
Description of the drawings
Fig. 1 is the schematic diagram of the light-emitting device of the first preferred embodiment according to the present invention.
Fig. 2 is the schematic diagram of the light-emitting device of the second preferred embodiment according to the present invention.
Fig. 3 is the schematic diagram of the light-emitting device of the 3rd preferred embodiment according to the present invention.
Fig. 4 is the schematic diagram of the light-emitting device of the 4th preferred embodiment according to the present invention.
Fig. 5 is the schematic diagram of the light-emitting device of the 5th preferred embodiment according to the present invention.
Fig. 6 is the schematic diagram of the light-emitting device of the 6th preferred embodiment according to the present invention.
Fig. 7 is the schematic diagram of the light-emitting device of the 7th preferred embodiment according to the present invention.
Fig. 8 is the schematic diagram of the light-emitting device of the 8th preferred embodiment according to the present invention.
Fig. 9 is the schematic diagram of the light-emitting device of the 9th preferred embodiment according to the present invention.
Figure 10 is the schematic diagram of the light-emitting device of the tenth preferred embodiment according to the present invention.
Figure 11 A to Figure 11 D are the formation fluorescence of the manufacture method of the light-emitting device according to presently preferred embodiments of the present invention
The step of thin film schematic diagram.
Figure 12 A to Figure 12 C are that the formation of the manufacture method of the light-emitting device according to presently preferred embodiments of the present invention is another
The step of fluorescence membrane schematic diagram.
Figure 13 A and Figure 13 B is light transmission schematic diagram and the comparison diagram (fluorescence coating of fluorescence structure in light-emitting device
Do not show).
Figure 14 and Figure 15 are the another fluorescence of formation of the manufacture method of the light-emitting device according to presently preferred embodiments of the present invention
The step of thin film schematic diagram.
Figure 16 A to Figure 16 F are the punching fluorescence of the manufacture method of the light-emitting device according to presently preferred embodiments of the present invention
The step of thin film schematic diagram.
The step of Figure 17 is the cutting fluorescence membrane of the manufacture method of the light-emitting device according to presently preferred embodiments of the present invention
Schematic diagram.
Figure 18 A and Figure 18 B are that the formation of the manufacture method of the light-emitting device according to presently preferred embodiments of the present invention lights
The step of structure schematic diagram.
The step of Figure 19 is the formation catoptric arrangement of the manufacture method of the light-emitting device according to presently preferred embodiments of the present invention
Schematic diagram.
Figure 20 is showing the step of removing auxiliary material for the manufacture method of the light-emitting device according to presently preferred embodiments of the present invention
It is intended to.
The step of Figure 21 is the cutting catoptric arrangement of the manufacture method of the light-emitting device according to presently preferred embodiments of the present invention
Schematic diagram.
Figure 22 A, Figure 22 B, Figure 22 D and Figure 22 E are the luminous dress of the 11st preferred embodiment according to the present invention
The schematic diagram put, wherein Figure 22 D and Figure 22 E more show the light transmission schematic diagram in light-emitting device, and Figure 22 C
Then show that there is light-emitting device light during equally distributed fluorescent material to transmit schematic diagram.
Drawing reference numeral
1A, 1B, 1C, 1D, 1E, 1F, 1G, 1H, 1I, 1J, 1K light-emitting device
10 LED chips
11 upper surfaces
12 lower surfaces
13 sides
14 electrode groups
20 fluorescence structures
20 ' transparent configurations
200 fluorescence membranes
201 fluorescence coatings
201 ' fluorescence coatings
202 photic zones
203 lens array layers
21 top surfaces
22 bottom surfaces
23 sides, inclined side
23 ' vertical sides
30 catoptric arrangements
31 medial surface
Lead angle, medial slope in 32
33 top surfaces
34 bottom surfaces
35 lateral surface
40 substrates
50th, 50 ', 50 " aid in material
60 punching tools
61 blades
70 saw wheels or double-angle milling cutter
71 blades
L light
X amount of upward slope
T thickness
W length
H height
Specific embodiment
Refer to shown in Fig. 1, which is the schematic diagram of the light-emitting device of the first preferred embodiment according to the present invention.This
Electro-optical device 1A can include a LED chip 10, a fluorescence structure 20 and a catoptric arrangement 30, and the plurality of element
Technology contents sequentially will be described as follows.
The LED chip 10 can be the chip of a flip kenel, and can have a upper surface 11, a following table in appearance
Face 12, one side 13 and an electrode group 14.The upper surface 11 is relative with lower surface 12 and arranges on the contrary, and
Side 13 is formed between upper surface 11 and lower surface 12, and connects upper surface 11 and lower surface 12.Electrode group
14 are arranged on lower surface 12, and can have plural electrode.Electric energy (not shown) can pass through electrode group 14
Supply to LED chip 10, then make LED chip 10 light.The light launched by LED chip 10 is big
Part is left from upper surface 11.
Fluorescence structure 20 can change the wavelength of the light launched by LED chip 10, and can have a top surface in appearance
21st, a bottom surface 22 and one side 23；Top surface 21 is relative with bottom surface 22 and is reversed, and side 23 is formed
Between top surface 21 and bottom surface 22, and connect top surface 21 and bottom surface 22.Top surface 21 can be horizontal plane with bottom surface 22,
Therefore both can be parallel.
Top surface 21 is more than bottom surface 22, it is, area of the area of top surface 21 more than bottom surface 22, therefore along normal
Direction is down observed, and top surface 21 can cover in bottom surface 22.When top surface 21 is more than bottom surface 22, side 23 is by phase
It is skewed for top surface 21 and the presentation one of bottom surface 22, therefore side 23 is also referred to as inclined side 23.Inclined side 23
It is to be formed with the profile of bottom surface 22 along top surface 21, therefore inclined side 23 relative to top surface 21 with bottom surface 22 is
Ring-type.Therefore, fluorescence structure 20 is rendered as a truncated cone (frustum) in appearance, and side 23 is inverted cone side
Face.
Can include a fluorescence coating 201 and an at least photic zone 202 in 20 structure of fluorescence structure, and an at least photic zone
202 are formed on fluorescence coating 201, or can say, photic zone 202 is stacked on fluorescence coating 201.Photic zone 202
And fluorescence coating 201 can all allow light to pass through, therefore its manufacture material can all include the light transmissive materials such as a light-permeable resin, and
The manufacture material of fluorescence coating 201 then further includes fluorescent material, and which is mixed in light transmissive material.When LED chip 10
Light by fluorescence coating 201, the wavelength of some light will change, then be further continued for by photic zone 202.
Although photic zone 202 will not change the wavelength of light, fluorescence coating 201 can be protected so that the material in environment
It is difficult to touch fluorescence coating 201.Additionally, photic zone 202 can also increase the overall construction intensity of fluorescence structure 20,
So that fluorescence structure 20 is not flexible, there is provided enough operability in production.
Fluorescence structure is arranged in LED chip 10 on 20 position, and the bottom surface 22 of fluorescence structure 20 is located at LED
On the upper surface 11 of chip 10, therefore top surface 21 and inclined side 23 are also positioned at the upper surface 11 of LED chip 10
On.In other words, fluorescence structure 20 is overall is all located on the upper surface 11 of LED chip 10.
It is preferred that the bottom surface 22 of fluorescence structure 20 can have sticking by a viscose glue (such as silica gel) or adhesive tape etc.
Material (not shown) is affixing to the upper surface 11 of LED chip 10 so that fluorescence structure 20 and LED chip
Fixation between 10 is more preferably.Additionally, the bottom surface 22 of fluorescence structure 20 can be not less than (i.e. more than or equal to) LED
The upper surface 11 of chip 10, therefore down observe along normal direction, fluorescence structure 20 can cover LED chip 10.
The side 13 of the cladding LED chip 10 of catoptric arrangement 30 and the inclined side 23 of fluorescence structure 20, without
The top surface 21 of cladding fluorescence structure 20；In the present embodiment, the inclined side 23 of fluorescence structure 20 is completely coated with.
Catoptric arrangement 30 can stop the light of LED chip 10, therefore light can be anti-at side 13 and inclined side 23
Penetrate, and be ultimately directed to top surface 21.
It is preferred that when the cladding side 13 of catoptric arrangement 30 and inclined side 23, can fit side 13 and inclined side
23, so that very close to each other between catoptric arrangement 30 and side 13 and inclined side 23.Therefore, catoptric arrangement 30
With the medial surface 31 fitted with side 13, and lead angle in fitted with inclined side 23 (or claim
Medial slope) 32；As inclined side 23 is inverted cone side, therefore the interior lead angle 32 for fitting is on the inside of inverted cone
Face, makes catoptric arrangement 30 that interior lead angle reflecting surface is presented.Additionally, a top surface 33 of catoptric arrangement 30 can be flush to it is glimmering
The top surface 21 of photo structure 20；Catoptric arrangement 30 also has a lateral surface 35, itself and medial surface 31 and medial slope
32 mutually separate, and lateral surface 35 can be vertical.
In manufacture material, catoptric arrangement 30 can be by made by the material comprising a reflexive resin, reflexive tree
Fat can for example be polyphthalamide (polyphthalamide, i.e. PPA), polycyclohexylene's diformazan
Alcohol ester (Polycyclolexylene-di-methylene Terephthalate, i.e. PCT) or thermosetting epoxy resin (Epoxy
Molding compound, i.e. EMC).
Catoptric arrangement 30 also can be by made by another material comprising a light-permeable resin, and light-permeable resin is comprising anti-
Penetrating property microgranule.Light-permeable resin can for example be that (coefficient of refraction can be 1.35 to 1.45 for silica gel or low reflection coefficient silica gel
Left and right), and reflective particles can be titanium dioxide (TiO2), boron nitride (BN), silicon dioxide (SiO2) or three oxidations
Two aluminum (Al2O3)；The visible wavelength that can be sized to about 0.5 times of reflective particles.Except above-mentioned manufacture
Outside material, catoptric arrangement 30 is also possible to by other materials make.
It is the technology contents of each element of light-emitting device 1A above, and light-emitting device 1A at least has following technology special
Point.
As shown in FIG. 13A, fluorescence structure 20 has inclined side 23 so that the light L of LED chip 10, or
Via the changed light for sending of fluorescence coating 201 (as shown in Figure 1), can be along inclined side 23 efficiently
Project fluorescence structure 20；In other words, inclined side 23 is conducive to light L is guided the top for projecting fluorescence structure 20
Outside face 21, do not easily cause light L and be reflected back toward in fluorescence structure 20 or LED chip 10, thus reduce luminous energy
The loss of amount.Therefore, the light L launched by LED chip 10 can be drawn out outside fluorescence structure 20 well,
So that light-emitting device 1A has good luminous efficiency on the whole.When compared with the not fluorescence structure 20 with inclined side
(as shown in Figure 13 B, easily because of the restriction of critical angle, major part is reflected back toward fluorescence structure in top surface 21 to light L
20 or LED chip 10 in), the fluorescence structure 20 with inclined side 23, will for the lifting of luminous efficiency
It is more readily understood that.
Additionally, the inclined side 23 of fluorescence structure 20 can also make light-emitting device while improving light and drawing efficiency
1A has good space optical uniformity, can avoid yellow dizzy generation.Furthermore, inclined side 23 inclines with different
During rake angle, can make light-emitting device 1A that there are different lighting angles, therefore by the design to angle of inclination, it is reachable
To the purpose of adjustment lighting angle.
Fluorescence structure 20, also can be by adjusting photic zone except being increased by inclined side 23 in addition to luminous efficiency
202 coefficient of refraction increases luminous efficiency to the coefficient of refraction less than fluorescence coating 201.It is, photic zone 202
Coefficient of refraction can be between fluorescence coating 201 and air so that the light of LED chip 10 pass through photic zone 202
And when entering to air, can reduce and reflect on interface because of the difference of coefficient of refraction.
If photic zone 202 is two or more (not shown), the coefficient of refraction of the plurality of photic zone 202 can it is different (i.e.
The manufacture material of two photic zones 202 is different), and coefficient of refraction up is less than the coefficient of refraction in lower section person.
Thus, can further improving luminous efficiency.
On the other hand, fluorescence structure 20 can be merely greater than 10 1 points of LED chip, therefore LED chip 10 is small size
When, fluorescence structure 20 can also be arranged to small size；And small size is also can be set to the catoptric arrangement 30 for coating,
So that the size of final light-emitting device 1A is small person.In other words, if the size of light-emitting device 1A need to be designed to
Small person or chip-scale (chip scale), are also feasible using fluorescence structure 20, and can also increase luminous efficiency etc..
In one example, the length and width of corresponding with the length catoptric arrangement of the width of light-emitting device 1A 30, and the width
No more than 2.0 millimeters, and the length is not more than 3.0 millimeters.
It is more than the explanation of the technology contents of light-emitting device 1A, then will illustrates sending out according to other embodiments of the invention
The technology contents of electro-optical device, and the technology contents of the light-emitting device of each embodiment should be referred to mutually, therefore identical part
To be omitted or simplified.
Refer to shown in Fig. 2, which is the schematic diagram of the light-emitting device of the second preferred embodiment according to the present invention.It is luminous
Device 1B and other light-emitting devices do not exist together at least that, in the fluorescence structure 20 of light-emitting device 1B, photic zone 202
It is formed under fluorescence coating 201.It is, photic zone 202 is located at the upper table of fluorescence coating 201 and LED chip 10
Between face 11, therefore fluorescence coating 201 will not touch LED chip 10.Therefore, produced when LED chip 10 is operated
Raw heat energy less influences whether fluorescence coating 201, it is, the temperature of fluorescence coating 201 less likely because heat energy and on
Rise, therefore fluorescence coating 201 is in the efficiency of conversion wavelength of light, is difficult decay.Additionally, the refraction system of fluorescence coating 201
Number is smaller than the coefficient of refraction of photic zone 202, to increase luminous efficiency.
Refer to shown in Fig. 3, which is the schematic diagram of the light-emitting device of the 3rd preferred embodiment according to the present invention.It is luminous
Device 1C and other light-emitting devices do not exist together at least that, the fluorescence structure 20 of light-emitting device 1C further includes a lens
Array layer 203, which is formed on fluorescence coating 201.Lens array layer 203 can be integrally formed with photic zone 202, therefore
Photic zone 202 can be considered a part for lens array layer 203；Lens array layer 203 can be higher than catoptric arrangement 30
Top surface 33 so that top surface 33 of the top surface 21 of fluorescence structure 20 higher than catoptric arrangement 30.Lens array layer 203
The luminous efficiency of light-emitting device 1C can further be increased.
Refer to shown in Fig. 4, which is the schematic diagram of the light-emitting device of the 4th preferred embodiment according to the present invention.It is luminous
Device 1D and other light-emitting devices do not exist together at least that, the fluorescence structure 20 of light-emitting device 1D includes multiple printing opacities
Layer 202, and fluorescence coating 201 is formed between the plurality of photic zone 202.Under such configuration, photic zone 202 can
Protection fluorescence coating 201, and impact of the heat energy of LED chip 10 to fluorescence coating 201 can be reduced.Additionally, fluorescence coating
201 coefficient of refraction is smaller than the coefficient of refraction of underlying photic zone 202, but more than photic zone above
202 coefficient of refraction, to increase luminous efficiency.
Refer to shown in Fig. 5, which is the schematic diagram of the light-emitting device of the 5th preferred embodiment according to the present invention.It is luminous
Device 1E and other light-emitting devices do not exist together at least that, the fluorescence structure 20 of light-emitting device 1E is a single fluorescent
Structure, that is, fluorescence coating 201 is only included, without photic zone.Therefore, the thickness of fluorescence coating 201 can be larger,
Can be by the light Wavelength-converting of more ratio, it is adaptable to the LED light emission device of wavelength of light need to be changed in a large number, for example
The white light LEDs of low colour temperature.
Refer to shown in Fig. 6, which is the schematic diagram of the light-emitting device of the 6th preferred embodiment according to the present invention.It is luminous
Device 1F and other light-emitting devices do not exist together at least that, light-emitting device 1F further includes a substrate 40, and LED core
Piece 10 and catoptric arrangement 30 are all arranged on substrate 40, and the electrode group 14 of LED chip 10 is also further electrically connected
To substrate 40.Substrate 40 for the element of electric energy can be transmitted, (such as circuit board, support etc.), thus pass through substrate 40
Can supply electric energy in light-emitting device 1F.Catoptric arrangement 30 is may be further extended to the lower surface of LED chip 10
Between 12 and substrate 40.
Refer to shown in Fig. 7, which is the schematic diagram of the light-emitting device of the 7th preferred embodiment according to the present invention.It is luminous
Device 1G and other light-emitting devices do not exist together at least that, the top surface 21 of the fluorescence structure 20 of light-emitting device 1G is high
In the top surface 33 of catoptric arrangement 30, and the inclined side 23 of fluorescence structure 20 is partly exposed to catoptric arrangement 30.
In other words, catoptric arrangement 30 only partially coats the inclined side 23 of fluorescence structure 20.Due to catoptric arrangement 30
Top surface 21 of the top surface 33 less than fluorescence structure 20, therefore catoptric arrangement 30 will not spread to fluorescence structure when being formed
20 top surface 21, therefore fabrication error allowance is increased, yields and production capacity can be effectively lifted, therefore can be not required to borrow
Help mould (detailed description see the manufacture method in aftermentioned embodiment) and further reduce production cost.
Refer to shown in Fig. 8, which is the schematic diagram of the light-emitting device of the 8th preferred embodiment according to the present invention.It is luminous
Device 1H and other light-emitting devices do not exist together at least that, though the catoptric arrangement 30 of light-emitting device 1H is intactly coated
The inclined side 23 of fluorescence structure 20, but the top surface 33 of a catoptric arrangement 30 not plane, but from interior lead angle 32
It is gradually downward-sloping；In other words, the top surface 33 of catoptric arrangement 30 is from the top surface 21 of fluorescence structure 20 to recessed
Fall into.The catoptric arrangement 30 of this form can also increase fabrication error allowance when being formed.
Refer to shown in Fig. 9, which is the schematic diagram of the light-emitting device of the 9th preferred embodiment according to the present invention.It is luminous
Device 1I and other light-emitting devices do not exist together at least that, the top surface 21 of the fluorescence structure 20 of light-emitting device 1I can be
In normal direction, catoptric arrangement 30 was covered；It is, down observing along normal direction, can only observe glimmering
Photo structure 20, and do not observe catoptric arrangement 30.Thus, the width and length of catoptric arrangement 30 further will reduce,
Enable light-emitting device 1I that there is less size.
Refer to shown in Figure 10, which is the schematic diagram of the light-emitting device of the tenth preferred embodiment according to the present invention.Send out
Electro-optical device 1J and other light-emitting devices do not exist together at least that, the fluorescence structure 20 of light-emitting device 1J ties can reflection
The bottom surface 34 of structure 30 is inclined upwardly.Specifically, when catoptric arrangement 30 is when forming, it is by the manufacture of a liquid
Material is formed in higher temperature solidification, and the process for solidifying can cause the reduction in bulk of catoptric arrangement 30, temperature-fall period
Also result in the reduction in bulk of catoptric arrangement 30 and fluorescence structure 20.Due to fluorescence structure 20 and catoptric arrangement 30
Fit, when both reductions in bulk, the bottom surface 34 of catoptric arrangement 30 can be inclined upwardly in response to deformation.
Amount of upward slope X of bottom surface 34 is associated in the material behavior and size of fluorescence structure 20 and catoptric arrangement 30
The factors such as difference, therefore adjust amount of upward slope X needed for the plurality of factor is obtained.It is preferred that amount of upward slope X
At least 3 microns.
Being inclined upwardly for bottom surface 34 can provide following beneficial effect：When light-emitting device 1J is bonded to a substrate, (figure is not
Show) during, often can apply heat energy (such as in reflow process or eutectic bonding to light-emitting device 1J and substrate
During situation, must all apply heat energy), and heat energy can cause catoptric arrangement 30 and fluorescence structure 20 to expand；If not to
During upper inclination, substrate may be pushed in the bottom surface 34 of the catoptric arrangement 30 of expansion, then cause light-emitting device 1J to be lifted
Rise, in turn result in engagement failure；However, the bottom surface 34 of the catoptric arrangement 30 of the light-emitting device 1J of the present embodiment is not
Substrate can be pushed, because bottom surface 34 is inclined upwardly.
In light-emitting device 1A- light-emitting device 1J in the above-described embodiment, its technology contents should be applied mutually,
It is not limited in the embodiment of itself.For example, the lens array layer 203 of light-emitting device 1C, light-emitting device 1F
Substrate 40, acclivitous bottom surface 34 of light-emitting device 1J etc. are all can be applicable in the light-emitting device of other embodiment
(not shown).Also, in light-emitting device 1A- light-emitting device 1J, the fluorescence structure 20 all can be incited somebody to action according to design requirement
Fluorescence coating 201 and photic zone 202 increase as multiple, and suitably adjust its stacking order, or in fluorescence structure 20
It is suitably added titanium dioxide (TiO2) etc. packing material, make to obtain optimum efficiency on the whole.
Furthermore, the technology contents of light-emitting device 1A- light-emitting device 1J are equally applicable for making and send monochromatic luminous
Device (monochromatic LED) 1K, as shown in fig. 22, the fluorescence of previous embodiment is tied by light-emitting device 1K
The transparent configuration 20 ' constituted with a transparent material by structure 20 substituting, i.e., the transparent configuration 20 ' not comprising fluorescence coating or
Fluorescent material, its wavelength of light that thereby LED chip 10 is sent can't be changed when by transparent configuration 20 '.
Thus, may be used to make the monochromatic small size light-emitting devices such as HONGGUANG, green glow, blue light, infrared light or ultraviolet light,
Which also simultaneously has small divergence angle, lighting area little so that the design of sharp secondary lens, thermal resistance be little and adjustable lighting angle etc.
Benefit.
Again as the application scenario of part needs the light source of high directivity, further reducing the angle of divergence has its necessity.Such as
Shown in Figure 22 B, (vertical side 23 ' is become) when the side inclination angle of the transparent configuration 20 ' is zero, can be obtained
Obtain the less angle of divergence.This angle of divergence can pass through to increase the height H of catoptric arrangement 30 again and further reduce.It is preferred that
Length W of the height H of catoptric arrangement 30 not less than 0.1 times of LED chip 10, no more than 5 times of LED core
Length W (i.e. depth-to-width ratio 0.1≤H/W≤5) of piece 10.Although the transparent configuration 20 ' of vertical side 23 ' can be sacrificed
Overall light extraction efficiency, but the angle of divergence after reducing can be such that light energy more concentrates, and cause the unit plane of specific direction
Product luminous flux (i.e. illumination) increases, thus meets the application of high directivity light source.It is preferred that the transparent configuration 20 '
Using low coefficient of refraction transparent material made by, coefficient of refraction is closer to 1, better for the effect that illumination increases.
If additionally, a fluorescence coating 201 ' (as shown in figure 22d) to be arranged at the bottom of the transparent configuration 20 ', can
Further conform to the application of high directivity white light source.Such as Figure 22 C those shown, when the fluorescent material of light-emitting device
To be uniformly distributed in transparent configuration 20 ', will produce scattering (scattering) when light L runs into fluorescent material and cannot profit
The directivity of light is improved with catoptric arrangement 30；Therefore, by fluorescence coating 201 ' be arranged at transparent configuration 20 ' bottom (and
It is stackable in LED chip 10) light L can be avoided to produce scattering in transparent configuration 20 '.For example shown in Figure 22 D,
Under the situation without scattering in transparent configuration 20 ', the light L of big angle of incidence (big with vertical direction angle) will in multiple times
Reflected by catoptric arrangement 30, cause its light intensity rapid decay, and transparent configuration 20 ' is not easily disconnected from (because light
L easily reflects in the top surface of transparent configuration 20 ' and returns in transparent configuration 20 ')；Again as shown in figure 22e, little incidence
The light L at angle (little with vertical direction angle) is seldom reflected by catoptric arrangement 30, is easily separated from transparent configuration 20 '.
Thus, light-emitting device 1K can screen out most of light L with big angle of incidence, have the overall light L for being sent
The less angle of divergence and higher directivity.
Above-mentioned light-emitting device 1K can also be the light-emitting device of a wafer-level package, i.e., the transparent knot in length and width
Structure 20 ' is equal or slightly larger than LED chip 10, and catoptric arrangement 30 is slightly larger than LED chip 10.Thus, luminous
Device 1K can improve the disappearance that the light-emitting device being currently known cannot meet the wafer-level package with small divergence angle.
Then by the manufacture method of the light-emitting device of explanation foundation presently preferred embodiments of the present invention, the manufacture method can be manufactured
Go out the light-emitting device 1A- light-emitting device 1J the same as or similar to above-described embodiment, thus the technology contents of manufacture method with send out
The technology contents of electro-optical device 1A- light-emitting device 1J mutually can be referred to.Manufacture method can include for three megastages：Form tool
There is a fluorescence structure of an inverted cone side；Fluorescence structure is arranged in a LED chip, to form a light-emitting junction
Structure；And the side of ray structure is coated, to form a catoptric arrangement with lead angle in inverted cone.Each rank
The technology contents of section are sequentially described as follows.
The formation of fluorescence structure 20 is divided into indirectly forming or is directly formed, and indirectly forms and refers to：It is initially formed a fluorescence
After thin film, then fluorescence membrane is divided into into multiple fluorescence structures.Refer to shown in Figure 11 A to Figure 11 D, which is " shape
Into fluorescence membrane " the step of schematic diagram.As shown in Figure 11 A, one is provided first aid in material (such as mould release membrance) 50,
And aid in material 50 also be positioned in a supporting construction (such as silicon substrate or glass substrate, not shown).
As shown in Figure 11 B, then by fluorescence coating 201 be formed at auxiliary material 50 on, can by spray (spray coating),
The printing technique such as (printing) or model (molding) reaching, it is, by the manufacture material of fluorescence coating 201
It is arranged on auxiliary material 50 by these techniques, fluorescence coating 201 after manufacture material solidification, can be formed.Publication number
The forming method of the fluorescence coating disclosed by the U.S. patent application case of US2010/0119839 and US2010/0123386 is also
Can be applicable in the present embodiment, which can be advantageously controlled the thickness and uniformity of fluorescence coating；Two U.S. patent application case
Technology contents be incorporated by herein.
As shown in Figure 11 C, then photic zone 202 is formed on fluorescence coating 201, can by spraying, printing,
The technique such as model or dispensing (dispensing) is reaching.If plural photic zone 202 need to be formed, work is sprayed
Skill is more adapted to.As shown in Figure 11 D, after photic zone 202 is formed, auxiliary material 50 can be removed, to obtain
The fluorescence membrane 200 constituted with fluorescence coating 201 by photosphere 202.Fluorescence membrane 200 can correspond to light-emitting device 1A
Fluorescence structure 20 (as shown in Figure 1), can also correspond to light-emitting device 1G, light-emitting device 1H and light-emitting device 1J
Fluorescence structure 20 (as shown in Fig. 7, Fig. 8 and Figure 10), by the fluorescence membrane 200 that will complete when the cutting
Invert up and down, you can the fluorescence structure 20 (as shown in Figure 2) of correspondence light-emitting device 1B.
By the formation order for changing photic zone 202 and fluorescence coating 201, different fluorescence membranes 200, example is obtained
As shown in Figure 12 A to Figure 12 C, photic zone 202, fluorescence coating 201 and another photic zone 202 are sequentially formed at auxiliary
Help on material 50, to constitute the fluorescence membrane 200 of the fluorescence structure 20 (as shown in Figure 4) of a corresponding light-emitting device 1D.
Again as shown in figure 14, fluorescence coating 201 is only formed on auxiliary material 50, therefore may make up a corresponding light-emitting device 1E, sends out
The fluorescence membrane 200 of the fluorescence structure 20 (as shown in Fig. 5, Fig. 6 and Fig. 9) of electro-optical device 1F and light-emitting device 1I.
Again as shown in figure 15, after fluorescence coating 201 is formed, a lens array layer 203 can be formed on fluorescence coating 201.
The formation of lens array layer 203 can be by model, it is, fluorescence coating 201 and auxiliary material 50 are positioned over a mould
In tool (not shown), then the manufacture material of lens array layer 203 is injected in mould, manufacture material solidification can
Form lens array layer 203.The fluorescence membrane 200 constituted by this kind of fluorescence coating 201 and lens array layer 203 can be right
Answer the fluorescence structure 20 (as shown in Figure 3) of light-emitting device 1C.
After various fluorescence membranes 200 are formed, fluorescence membrane 200 can be divided into into many by being punched (punching)
The individual part with an inclined side, and one of them part is the fluorescence structure 20.
Specifically, refer to shown in Figure 16 A and Figure 16 B, fluorescence membrane 200 be first reversed after with bottom surface upward
It is placed on another auxiliary material 50 ', then a punching tool 60 is punched fluorescence membrane 200 from top.Refer to
Shown in Figure 16 C, punching tool 60 has multiple blades 61, and the plurality of blade 61 is connected, and according to fluorescence
The profile of structure 20 for example arranges rectangular arranging.Therefore, when punching tool 60 is punched fluorescence membrane 200
When, as shown in Figure 16 D and Figure 16 E, fluorescence membrane 200 will be divided into multiple fluorescence structures 20；It is, punching
Multiple fluorescence structures 20 are formed by cutting once.The bottom surface 22 of the plurality of fluorescence structure 20 is directed towards punching tool 60
Blade 61.In addition, as shown in fig. 16f, if the fluorescence membrane 200 of punching includes lens array layer 203,
Then lens array layer 203 is placed on auxiliary material 50 '.
It follows that fluorescence membrane 200 can be rapidly divided into multiple fluorescence structures 20 by punching mode.Additionally, glimmering
The angle of inclination of the inclined side 23 of photo structure 20 also can be controlled by several factors, for example, adjust blade 61
The factor such as the material character of angle (or section), the physical dimension of fluorescence structure 20 and/or fluorescence membrane 200.Cause
This, after these factors have been previously set, you can the inclined side 23 needed for obtaining.
In addition to punching, sawing (sawing), precision cutting (precision machining) or micro Process can be also taken
Fluorescence membrane 200 is formed multiple fluorescence structures 20 by modes such as (micro machining).Refer to shown in Figure 17,
One saw wheel or double-angle milling cutter (dual angle milling cutter) 70 cut fluorescence membrane 200 in multiple times, so that fluorescence is thin
Film 200 is divided into multiple fluorescence structures 20；The bottom surface 22 of the plurality of fluorescence structure 20 is directed towards saw wheel or double-angle milling cutter
70 blade 71.The angle of inclination of the inclined side 23 of fluorescence structure 20 can be come by the angle (or section) of blade 71
Control.In micro Process mode, fluorescence structure can be formed using steps such as barrier deposition, shape definition and etchings
20。
Aforesaid way is forming indirectly fluorescence structure 20, if with model (molding) or micro- from fluorescence membrane 200
The modes such as processing (micro machining) can directly form fluorescence structure 20.Specifically, in model mode,
One mould (not shown) will be provided, the outward appearance of the shape correspondence fluorescence structure 20 of its die cavity, then fluorescence structure
20 manufacture material will be injected in die cavity, can form fluorescence structure 20 after manufacture material solidification.In micro Process mode
In, fluorescence structure 20 is formed with steps such as coating, exposure, development and/or etchings.Model and micro-machined mode
Can also the batch mode of production simultaneously produce multiple fluorescence structures 20.
In addition to the soft light transmissive material such as light-permeable resin, also can be saturating using fragility such as glass, ceramics depending on application demand
Luminescent material is forming fluorescence structure 20.Wherein, in indirect method, fluorescence can be initially formed using methods such as sintering
Thin plate, reuses the methods such as sawing (sawing) and forms multiple fluorescence structures 20；In direct method, can be by fluorescence
Material and light transmissive material powder are inserted in die cavity, then are sintered；And this fluorescence
The manufacture method of structure 20 is equally applicable for making transparent configuration 20 '.Additionally, by transparent glass substrate or crystalline ceramics
Substrate directly can also form multiple transparent configurations 20 ' via methods such as sawings.
Then illustrate " formation of ray structure ".Figure 18 A are referred to, multiple LED chips 10 are by compartment of terrain first
It is placed on another auxiliary material 50 " on, aid in material 50 " can be that ultraviolet solution adhesive tape (UV release tape) or pyrolysis are viscous
Adhesive tape (thermal release tape) etc..Additionally, LED chip 10 can be pressurized and to be embedded in its electrode group 14 auxiliary
Help material 50 " and do not expose.If when having one substrate 40 of setting below LED chip 10 (as shown in Figure 6), no
Must be using auxiliary material 50 ".
Figure 18 B are referred to, fluorescence structure 20 is then positioned over the upper surface 11 of LED chip 10, and fluorescence knot
The inclined side 23 of structure 20 is exposed to outside upper surface 11；Fluorescence structure 20 can be affixed to by viscose glue or adhesive tape
The upper surface 11 of LED chip 10.Thus, fluorescence structure 20 and LED chip 10 can form a ray structure.
Then illustrate " formation of catoptric arrangement ".The formation of catoptric arrangement 30 is by the side 13 of LED chip 10
And the inclined side 23 common (i.e. simultaneously) of fluorescence structure 20 is coated, and specific mode at least model and
Two kinds of dispensing.Refer to shown in Figure 19, when taking model, fluorescence structure 20, LED chip 10 and auxiliary material 50 "
To be placed in a mould (not shown), then the manufacture material of catoptric arrangement 30 will be injected in mould, and
The side 13 of cladding LED chip 10 and the inclined side 23 of fluorescence structure 20；After manufacture material solidifies, instead
Formed by penetrating structure 30.This kind of catoptric arrangement 30 for making FAXIA can coat whole inclined sides 23.
When taking dispensing, then above-mentioned mould is not needed.The manufacture material of catoptric arrangement 30 will directly pour pouring to auxiliary
Help material 50 " on, then manufacture material can be in auxiliary material 50 " thicken gradually, to coat the side 13 of LED chip 10
And the inclined side 23 of fluorescence structure 20, the top surface 21 of the manufacture material of poured pouring not over fluorescence structure 20.
When the manufacture material of the poured pouring of slight reduction, the formed catoptric arrangement 30 of its solidification will be such as Fig. 7 and Fig. 8
Those shown.
After catoptric arrangement 30 is formed, as shown in figure 20, aid in material 50 " will be removable, to obtain multiple luminous dresses
Put 1A (or other kinds of light-emitting device).The catoptric arrangement 30 of the plurality of light-emitting device 1A may be connected,
Therefore can take a cutting step (as shown in figure 21) so that the catoptric arrangement being connected 30 is cut separation again, just arrive
The light-emitting device 1A being separated from each other.
Summary, the manufacture method of the light-emitting device in the present embodiment can produce the various fluorescence with inclined side
The light-emitting device of structure, and light-emitting device can be small size person.Additionally, manufacture method also have can batch production it is a large amount of
Fluorescence structure, and catoptric arrangement can not be formed by mould, the features such as with reduces cost.
The above embodiments are only used for the enforcement aspect for enumerating the present invention, and the technical characteristic of the explaination present invention, not
For limiting the protection category of the present invention.Any those skilled in the art can unlabored change or the arrangement of isotropism
The scope advocated by the present invention is belonged to, the scope of the present invention should be defined by claim.
Claims (26)
1. a kind of light-emitting device, it is characterised in that include：
One LED chip, with a upper surface, a lower surface relative to the upper surface, one side and an electrode
Group, the side are formed between the upper surface and the lower surface, and the electrode group is arranged on the lower surface；
One fluorescence structure, is arranged in LED chip, and which has a top surface, the bottom surface relative to the top surface and shape
Into the one side between the top surface and the bottom surface, the wherein top surface is more than the bottom surface, makes the side relative to the top surface
Skewed with bottom surface presentation one, the bottom surface is located on the upper surface of the LED chip；And
One catoptric arrangement, coats the side of the LED chip and the side of the fluorescence structure.
2. light-emitting device as claimed in claim 1, it is characterised in that the bottom surface of the fluorescence structure affixes to the LED
The upper surface of chip, and the bottom surface of the fluorescence structure is not less than the upper surface of the LED chip.
3. light-emitting device as claimed in claim 1, it is characterised in that the catoptric arrangement is by comprising a reflexive
Made by one material of resin or by made by another material comprising a light-permeable resin, the light-permeable resin is comprising anti-
Penetrating property microgranule.
4. light-emitting device as claimed in claim 3, it is characterised in that the reflexive resin is poly- phthalyl
Amine, polycyclohexylene's diformazan alcohol ester or epoxy resin；The light-permeable resin is silica gel；The reflective particles
For titanium dioxide, boron nitride, silicon dioxide or aluminium sesquioxide.
5. light-emitting device as claimed in claim 3, it is characterised in that the light-permeable resin is a low reflection coefficient
Silica gel and include reflective particles.
6. light-emitting device as claimed in claim 1, it is characterised in that the catoptric arrangement with the LED chip
The medial surface that fits of the side and the medial slope fitted with the inclined side of the fluorescence structure.
7. the light-emitting device as described in any claim in claim 1-6, it is characterised in that the fluorescence structure is
One single fluorescent structure.
8. the light-emitting device as described in any claim in claim 1-6, it is characterised in that the fluorescence structure bag
Include a fluorescence coating and an at least photic zone, an at least photic zone is formed on the fluorescence coating.
9. light-emitting device as claimed in claim 8, it is characterised in that at least one euphotic coefficient of refraction is little
In the coefficient of refraction of the fluorescence coating.
10. the light-emitting device as described in any claim in claim 1-6, it is characterised in that the fluorescence structure
Including a fluorescence coating and a lens array layer, the lens array layer is formed on the fluorescence coating.
11. light-emitting devices as described in any claim in claim 1-6, it is characterised in that the fluorescence structure
Including a fluorescence coating and a photic zone, the photic zone is formed under the fluorescence coating.
12. light-emitting devices as described in any claim in claim 1-6, it is characterised in that the catoptric arrangement
A bottom surface be inclined upwardly.
13. light-emitting devices as described in any claim in claim 1-6, it is characterised in that along the fluorescence
One normal direction of the top surface of structure, the top surface of the fluorescence structure cover the catoptric arrangement.
14. light-emitting devices as described in any claim in claim 1-6, it is characterised in that the fluorescence structure
Top surface higher than the catoptric arrangement a top surface, and the lateral parts of the fluorescence structure be exposed to the catoptric arrangement.
15. light-emitting devices as described in any claim in claim 1-6, it is characterised in that the catoptric arrangement
A top surface it is downward-sloping from the top surface of the fluorescence structure.
16. light-emitting devices as described in any claim in claim 1-6, it is characterised in that further include a base
Plate, the LED chip and the catoptric arrangement are arranged on the substrate, and the LED chip is electrically connected to the substrate.
17. light-emitting devices as described in any claim in claim 1-6, it is characterised in that the catoptric arrangement
With a width and a length, the width is not more than 2.0 millimeters, and the length is not more than 3.0 millimeters.
18. a kind of manufacture methods of light-emitting device, it is characterised in that include：
Form the fluorescence structure with an inverted cone side；
The fluorescence structure is arranged in a LED chip, to form a ray structure；And
The side of the ray structure is coated, to form a catoptric arrangement with inverted cone medial surface.
The manufacture method of 19. light-emitting devices as claimed in claim 18, it is characterised in that：
The step of forming the fluorescence structure, is to form a fluorescence structure with a top surface, a bottom surface and an inclined side,
Wherein the top surface is more than the bottom surface, and the inclined side is formed between the top surface and the bottom surface；
The step of forming the ray structure, is, on the upper surface for place the fluorescence structure to the LED chip, to make this
The inclined side of fluorescence structure is exposed to outside the upper surface；And
The step of forming the catoptric arrangement, is that the inclined side of the one side and the fluorescence structure of the LED chip is common
It is same to be coated.
The manufacture method of 20. light-emitting devices as claimed in claim 19, it is characterised in that form the fluorescence structure
The step of, it is that the inclined side is formed out with punching, model, sawing, precision cutting or micro Process.
The manufacture method of 21. light-emitting devices as claimed in claim 19, it is characterised in that form the fluorescence structure
The step of further include：A fluorescence membrane is punched, so that the fluorescence membrane is divided into multiple parts with an inclined side,
And one of them part is the fluorescence structure.
22. the manufacture method of light-emitting device as claimed in claim 21, it is characterised in that the fluorescence membrane is
Single fluorescent thin film includes a fluorescence coating and a photic zone, and the fluorescence coating is formed on the photic zone or the photic zone
Under.
The manufacture method of 23. light-emitting devices as described in any claim in claim 18-22, it is characterised in that
The fluorescence structure affixes to the LED chip.
24. a kind of light-emitting devices, it is characterised in that include：
One LED chip, with a upper surface, a lower surface relative to the upper surface, one side and an electrode
Group, the side are formed between the upper surface and the lower surface, and the electrode group is arranged on the lower surface；
One transparent configuration, is arranged in LED chip, and which has a top surface, the bottom surface relative to the top surface and shape
Into the one side between the top surface and the bottom surface, the size of the top surface is more than or equal to the size of the bottom surface, the bottom surface
On the upper surface of the LED chip；And
One catoptric arrangement, coats the side of the LED chip and the side of the transparent configuration,
Wherein, 0.1 times not less than a length of the LED chip of a height of the catoptric arrangement, and no more than should
5 times of the length of LED chip.
25. light-emitting devices as claimed in claim 24, it is characterised in that the transparent configuration further includes a filling material
Material.
26. light-emitting devices as claimed in claim 24 a, it is characterised in that bottom of the transparent configuration further includes
One fluorescence coating.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/280,927 US10763404B2 (en) | 2015-10-05 | 2016-09-29 | Light emitting device with beveled reflector and manufacturing method of the same |
| EP16192043.4A EP3154095B1 (en) | 2015-10-05 | 2016-10-03 | Light emitting device with beveled reflector and manufacturing method of the same |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104132711A TWI677114B (en) | 2015-10-05 | 2015-10-05 | Light emitting device with beveled reflector |
| TW104132711 | 2015-10-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106560933A true CN106560933A (en) | 2017-04-12 |
Family
ID=58485514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610033451.4A Pending CN106560933A (en) | 2015-10-05 | 2016-01-19 | Light-emitting device with angle-guiding reflection structure and manufacturing method thereof |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6599295B2 (en) |
| KR (2) | KR20170040761A (en) |
| CN (1) | CN106560933A (en) |
| TW (1) | TWI677114B (en) |
Cited By (12)
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Also Published As
| Publication number | Publication date |
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| JP6599295B2 (en) | 2019-10-30 |
| KR102339021B1 (en) | 2021-12-15 |
| TW201714329A (en) | 2017-04-16 |
| KR20180127292A (en) | 2018-11-28 |
| TWI677114B (en) | 2019-11-11 |
| KR20170040761A (en) | 2017-04-13 |
| JP2017108111A (en) | 2017-06-15 |
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