CN109494289A - Using the light emitting device and its manufacturing method of quantum dot color conversion - Google Patents
Using the light emitting device and its manufacturing method of quantum dot color conversion Download PDFInfo
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- CN109494289A CN109494289A CN201710812987.0A CN201710812987A CN109494289A CN 109494289 A CN109494289 A CN 109494289A CN 201710812987 A CN201710812987 A CN 201710812987A CN 109494289 A CN109494289 A CN 109494289A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention proposes a light emitting device, includes: crystal covering type LED chip；Luminescence generated by light structure, is set in LED chip；And moisture barrier catoptric arrangement, cover the side of luminescence generated by light structure and the facade of LED chip.Luminescence generated by light structure includes the first photoluminescent layers, light transparent spacer layer, the second photoluminescent layers and the transparent moisture barrier layers of light of sequentially storehouse.In a preferred embodiment, LED chip issues blue light, and the first photoluminescent layers include red fluorescence material, and the second photoluminescent layers include green quantum dot；Whereby, the blue light part compared with Gao Nengjie first can be converted to the feux rouges compared with low energy rank by the red fluorescence material of the first photoluminescent layers, reduced the blue light strength that do not converted for being irradiated in green quantum dot, effectively avoided the photooxidation of quantum dot.The present invention separately proposes the manufacturing method of above-mentioned light emitting device.
Description
Technical field
The present invention is in relation to a kind of wafer-level package light emitting device and its manufacturing method, especially in regard to a kind of green quantum of application
The wafer-level package light emitting device and its manufacturing method of point material and red fluorescence powder.
Background technique
Quantum dot (quantum dot, QD) material is a semiconductor crystalline material having a size of nano-scale, partial size ruler
It is very little generally between 1 nanometer to 50 nanometers, by the light of high energy rank irradiation after, due to quantum confinement effect (Quantum
Confinement effect), portions incident light can be converted into another luminous ray compared with low energy rank by quanta point material, therefore
Quanta point material can be used as an embedded photoluminescent material.Through partial size, shape or the material composition for changing quanta point material, may make
Quanta point material issues the luminous ray of different wave length, that is, changes it and shine frequency spectrum (spectrum).
Compared to conventional fluorescent material, such as yttrium-aluminium-garnet (YAG) fluorescent powder, nitride (Nitride) or nitrogen oxidation
The luminous frequency spectrum of object (Oxynitride) fluorescent powder etc., quanta point material has substantially narrower halfwidth (Full Width at
Half Maximum, FWHM), therefore, quantum dot material adapted LED chip is used to constitute a LED light emission device using as display
When the back light of device, the color purity of display can be improved.It can be reached compared to Organic Light Emitting Diode (OLED) display
To the gamut range (Color Gamut) of 70%BT.2020, can have in color representation using the display of quanta point material
The up to gamut range of 90%BT.2020；In addition, service life is shorter, and quantum dot compared to the OLED for belonging to organic material
Material category inorganic material, service life are relatively long.On the other hand, can directly replace using the light emitting device of quanta point material existing
There is the back light of liquid crystal display, the change for only transmitting embedded photoluminescent material can obviously increase the colour gamut model of liquid crystal display
It encloses.
Although the light emitting device of quanta point material collocation LED chip has above-mentioned advantage, but still some problems in practice
Wait improve or overcome.For example, the thermal stability (thermal stability) of quanta point material is bad, in hot environment
Under (environment for being greater than 70 DEG C), efficiency will obviously decay.Therefore, generated thermal energy may make when LED chip operates
The efficiency of quanta point material substantially decays.
In addition, surface is easily oxidized and forms oxide when quanta point material touches aqueous vapor or oxygen in air, lead
The luminous intensity decline for causing quanta point material, therefore, need to have good moisture barrier using the light emitting device of quanta point material
Protection can just make extraneous aqueous vapor and oxygen be not easy to permeate inwardly and contact quanta point material, so that light emitting device is with longer
Service life.
Furthermore there are in the case where oxygen or aqueous vapor arround, quanta point material is (such as ultraviolet by the light compared with Gao Nengjie
Light or blue light) excitation when, be more also easy to produce photooxidation (photo-oxidation) phenomenon, cause its luminous intensity (intensity)
The frequency spectrum that is decreased obviously and shines " blue shift (blue shifting) ".Specifically, high energy rank light is irradiated in quantum dot etc.
When semiconductor material, due to the effect of photoelectric effect (photovoltaic effect), semiconductor material will generate a large amount of electronics
With hole, and the free electron being inspired make semiconductor material surface be easy by arround oxygen molecule dissociation
(dissociation) oxygen atom and oxonium ion are formed, semiconductor material is promoted to be easier to react with oxygen and form oxide；It learns
Person Young E.M. is equal to J Appl in 1997 in the paper and scholar Sato S. of Appl Phys A 47:259-69 in 1988
The paper of Phys 81:1518 has many realities to the photooxidation phenomenon of this electronic activation (electron-active) semiconductor material
Verifying and description.Therefore, quanta point material, can its significantly accelerated oxidation reaction under the irradiation of high energy rank light.
Meanwhile after quantum dot surface generates oxidation, reduce the effective grain size of quanta point material, due to compared with small particle
Quantum dot light electroluminescent material can produce the conversion light (i.e. wavelength is shorter) compared with Gao Nengjie, therefore quanta point material surface in
It will make its frequency spectrum that shines mobile towards short wavelength after oxidation, and generate so-called " blue shift (blue shifting) " phenomenon.Also, oxidation
The generation of object will increase the fault of construction (defects) of quantum dot, and this fault of construction will cause electricity when photoelectric effect acts on
Son with hole follow non-radiating mode in conjunction with (non-radiative electron-hole recombination), this non-spoke
The electron hole penetrated is combined and will be released energy in a manner of thermal energy, without being converted to the photon compared with low energy rank, therefore quantum dot
The photooxidation phenomenon of material also results in the decline of its luminous intensity, and quantum dot is finally made no longer to shine, this i.e. quantum dot it is photic
It fades (photobleaching) phenomenon.Therefore, when quanta point material being applied to LED light emission device, quantum dot material need to be prevented
Material is irradiated by too strong relatively Gao Nengjie light, and begin the indigo plant for being avoided that optical attenuation caused by photooxidation phenomenon and luminous frequency spectrum
It moves.
In addition, quanta point material need to be usually dispersed in bonding glue material by the light emitting device using quantum dot color conversion
(binder) to obtain good luminous efficiency among.However, not quanta point material can all be compatible with all glue materials, usually need
Quanta point material be first subjected to surfaction, such as form dentate (Ligand), quantum dot could be dispersed in spy
Determine in glue material；Therefore, the process compatibility between surfaction, the selection of specific glue material and difference glue material also becomes realization and will measure
Son point material is applied to the allowed important technical challenges of LED light emission device.
In summary, how preferably to improve or overcome the problems, such as above-mentioned any to send out quanta point material applied to LED
Electro-optical device, exactly current LED industry technical task to be solved.
Summary of the invention
An object of the present invention is to provide a kind of its manufacturing methods of the light emitting device using quantum dot color conversion, should
Light emitting device is wafer-level package light emitting device, and using crystal covering type LED chip, the sinking path with low thermal resistance is to reduce LED
Chip junction temperature (Junction Temperature), therefore the thermal decay of quanta point material can be effectively improved, it drops
The temperature that low quanta point material is born.
An object of the present invention is to provide a kind of light emitting device and its manufacturing method using quantum dot color conversion,
The light emitting device has good moisture barrier air-tightness (hermetic seal), the water in outside air is reduced or avoided
Gas and oxygen touch quanta point material, can effectively improve the oxidative phenomena of quanta point material.
An object of the present invention is to provide a kind of light emitting device and its manufacturing method using quantum dot color conversion,
The fluorescent material for being not easy photooxidation is set to and is easier between the quanta point material of photooxidation and LED chip, can effectively reduce into
It penetrates in the luminous intensity of the high energy rank light of quanta point material, so that it is no more than the quanta point material person of can bear, to improve quantum
The photooxidation phenomenon of point material.
An object of the present invention is to provide a kind of its manufacturing methods of the light emitting device using quantum dot color conversion, Gu
Bonding glue material needed for bonding glue material needed for determining fluorescent material and fixed quanta point material has different characteristics, glue material solidification
Processing procedure is also incompatible, which can effectively obstruct the high molecular material for fixing quanta point material and be used to fix fluorescence
The high molecular material of material both avoids processing procedure or the incompatible problem of material property.
In order to achieve the above object, the light emitting device proposed may include: a crystal covering type LED chip, to provide one first light
Line, first light are a blue light, a dark blue light, a purple light or a ultraviolet light；One luminescence generated by light structure setting is in the crystal covering type
On one upper surface of LED chip, and including one first photoluminescent layers, a smooth transparent spacer layer, one second photoluminescent layers and
The transparent moisture barrier layers of one light, the light transparent spacer layer are set on first photoluminescent layers, which sets
It is placed in the light transparent spacer layer, and the transparent moisture barrier layers of the light are set on second photoluminescent layers, wherein this first
Photoluminescent layers include the glimmering of one first high molecular material and the lower excitation energy rank that is mixed in first high molecular material
Luminescent material (such as red fluorescence material), and second photoluminescent layers include one second high molecular material and be mixed in this second
The quanta point material (such as green quanta point material) of a higher excitation energy rank in high molecular material；And one moisture barrier it is anti-
Structure is penetrated, covers the one side of the luminescence generated by light structure and a facade of the crystal covering type LED chip, and be not less than the crystal covering type
One electrode surface of LED chip；Wherein, the fluorescent material of the lower excitation energy rank of first photoluminescent layers to by this first
The some of light (such as blue light) is converted to the luminous ray (such as feux rouges) of a longer wavelength so that this do not converted
The luminous intensity of one light (such as blue light) reduces, to reach quanta point material (such as the green for being not more than the higher excitation energy rank
Quanta point material) luminous intensity that can bear.The invention discloses the manufacturing method of light emitting device may include: by a luminescence generated by light
Structure fits with a crystal covering type LED chip；And a moisture barrier catoptric arrangement is formed, to cover the luminescence generated by light structure
One facade of one side and the crystal covering type LED chip.
Whereby, light emitting device proposed by the invention at least can provide following advantageous effects:
1, for the position where crystal covering type LED chip, the second photoluminescent layers are set to the first luminescence generated by light
The top of layer, therefore a part of of the first light that crystal covering type LED chip is issued can first be converted by the first photoluminescent layers, reduce
First light is irradiated to the quanta point material (such as green quanta point material) of the higher excitation energy rank in the second photoluminescent layers
Dosage.Therefore, the luminous intensity for exposing to the first light of the quanta point material of higher excitation energy rank can bear no more than it
Luminous intensity, can be effectively suppressed or avoid the photooxidation phenomenon of the quanta point material of higher excitation energy rank.
2, light emitting device can be not required to package support, therefore under same package volume, can have biggish light-emitting area,
Therefore it can effectively reduce the blue light strength per unit area for being irradiated in quanta point material, to reduce the photooxidation of quanta point material.
3, the transparent moisture barrier layers of light and moisture barrier catoptric arrangement all have lower aqueous vapor permeability, can make the external world
Aqueous vapor and oxygen are not easy to penetrate wherein and touch the quanta point material in the second photoluminescent layers, can effectively avoid or reduction amount
The oxidative phenomena of son point material.
4, the second photoluminescent layers and the first photoluminescent layers are mutually separated by light transparent spacer layer, and the two is made not to be in contact,
In other words, for the second high molecular material of the quanta point material of glued higher excitation energy rank and for glued lower excitation energy rank
The first high molecular material of fluorescent material (such as red fluorescence material) will not be in contact, therefore will not influence each other other side's
Material property or process characteristics (such as curing mechanism).
5, it compared to the light emitting device using package support or package substrate, is sealed using the chip-scale of crystal covering type LED chip
Filling light emitting device has lower thermal resistance, can effectively reduce the junction temperature of LED chip, and the second photoluminescent layers are further away from covering
Brilliant formula LED chip, therefore, influence of the thermal energy caused by crystal covering type LED chip for quanta point material is smaller, can reduce quantum
The temperature that point material is born, such as less than 50 DEG C, 40 DEG C or 30 DEG C are effectively improved the thermal decay of quanta point material.
6, the fluorescent material of the lower excitation energy rank used by the first photoluminescent layers be fluoride fluorescent material (i.e.
KSF or MGF) when, since KSF and MGF is not excited by green light, the quanta point material of higher excitation energy rank can be issued
Light (such as green light) compared with Gao Nengjie effectively scatters outward, therefore can increase the whole light extraction efficiency of light emitting device.
Detailed description of the invention
It is hereafter appended attached with preferred embodiment cooperation for above-mentioned purpose, technical characteristic and advantage can be clearer and more comprehensible
Figure is described in detail.
Figure 1A and Figure 1B is two diagrammatic cross-sections of the light emitting device of the 1st preferred embodiment according to the present invention；
Fig. 1 C is the diagrammatic cross-section of another aspect of the light emitting device of the 1st preferred embodiment according to the present invention；
Fig. 2A and Fig. 2 C is another two diagrammatic cross-section of the light emitting device of the 1st preferred embodiment according to the present invention, display
Light conversion and transmitting；
Fig. 2 B is the luminescent spectrum measurement of the light emitting device of the 1st preferred embodiment according to the present invention；
Fig. 3 is the diagrammatic cross-section of the light emitting device of the 2nd preferred embodiment according to the present invention；
Fig. 4 A is the diagrammatic cross-section of the light emitting device of the 3rd preferred embodiment according to the present invention；
Fig. 4 B is the diagrammatic cross-section of another aspect of the light emitting device of the 3rd preferred embodiment according to the present invention；
Fig. 5 A to Fig. 5 I is the step schematic diagram of the manufacturing method of the light emitting device of a preferred embodiment according to the present invention；
And
Fig. 6 A to Fig. 6 D is the step schematic diagram of the manufacturing method of the light emitting device of a preferred embodiment according to the present invention.
Symbol description:
1~3 light emitting device
10 crystal covering type LED chips, LED chip
101 upper surfaces
102 electrode surfaces, lower surface
103 facades
104 electrode groups
20 luminescence generated by light structures, PL structure
201 top surfaces
202 bottom surfaces
203 sides
21 first photoluminescent layers, the first PL layers
211 first high molecular materials
Fluorescent material, the red fluorescence material of 212 lower excitation energy ranks
22 smooth transparent spacer layers
23 second photoluminescent layers, the 2nd PL layers
231 second high molecular materials
The quanta point material of 232 higher excitation energy ranks, green quanta point material, green QD material
233 light scattering particles
234 blue quanta point materials
The transparent moisture barrier layers of 24 light
The transparent heat-conducting layer of 25 light
The transparent separate layer of 26 light
30 moisture barrier catoptric arrangements, catoptric arrangement
301 top surfaces
302 bottom surfaces
31 third high molecular materials
32 light scattering particles
40 light guide structures
401 top surfaces
402 inclined sides
900 separated type materials
B blue light, blue light frequency spectrum
G, G1, G2 green light, green light frequency spectrum
R feux rouges, feux rouges frequency spectrum
Specific embodiment
Figure 1A and Figure 1B is please referred to, for the schematic diagram of the light emitting device 1 of the 1st preferred embodiment according to the present invention., hair
Electro-optical device 1 may include a crystal covering type LED chip 10, a luminescence generated by light structure 20 and a moisture barrier catoptric arrangement 30, each component
Technology contents will sequentially be described as follows.
Crystal covering type LED chip (hereinafter referred to as LED chip) 10, can to provide one first light (or chief ray)
Light for a blue light, a dark blue light, a purple light or a ultraviolet light etc. compared with Gao Nengjie；By taking a blue-light LED chip as an example, LED core
First light provided by piece 10 is blue light.Chip 10 may include a upper surface 101, a lower surface 102, a facade 103 and one
Electrode group 104, upper surface 101 are opposite with lower surface 102 and are arranged on the contrary that facade 103 is formed in upper surface 101 and following table
Between face 102 and connection upper surface 101 and lower surface 102, in other words, facade 103 along upper surface 101 edge and following table
The edge in face 102 and formed, therefore facade 103 is annular (such as square type ring) relative to upper surface 101 and lower surface 102.
Electrode group 104 is set on lower surface 102, and can have two or more electrodes.Since electrode group 104 is set to
Thereon, lower surface 102 is also known as electrode surface 102；It is professed, this electrode surface 102 is not necessarily referring to the lower surface of electrode 104.LED chip
Electric energy (not shown) is converted and issues the light for meeting the wave-length coverage of the first light (blue light) by 10 permeable electrode groups 104；
The light overwhelming majority can be issued from upper surface 101 and facade 103.
On the other hand, compared to the light emitting device for using bracket or substrate, disclosed herein light emitting device 1 be chip
Grade encapsulating light emitting device, one technical characteristic be LED chip 10 be crystal covering type chip, can be directly joined printed circuit board or its
On his application substrate, due to not including bracket, there is lower thermal resistance, generated thermal energy can be via electrode when operating
104 more directly dissipation of group, influence of the reduction thermal energy for other structures.
Luminescence generated by light (Photoluminescent, PL) structure 20 swashs in the first light issued by LED chip 10
It after hair, can absorb the first light of part and converts out the light (such as feux rouges and green light) compared with low energy rank, then part is not turned
After the first light (such as blue light) and feux rouges and green light changed mixes, the light (for example, white light) of color needed for constituting.
In appearance, luminescence generated by light structure (hereinafter referred to as PL structure) 20 may include a top surface 201, a bottom surface 202 and one
Side 203, top surface 201 are opposite with bottom surface 202 and are reversed that side 203 is formed between top surface 201 and bottom surface 202, and
Top surface 201 and bottom surface 202 are connected, in other words, side 203 is annular (such as square type ring) relative to top surface 201 and bottom surface 202.
On position, PL structure 20 is set in LED chip 10, and the bottom surface 202 of PL structure 20 is located at the upper table of LED chip 10
On face 101, and bottom surface 202 can be directly covered on upper surface 101, but not have the facade 103 of covering LED chip；However, not arranging
Except bottom surface 202 and the state sample implementation of upper surface 101 apart, settable other structures between PL structure 20 and LED chip 10 are indicated
Or material (not shown).In addition, bottom surface 202 may be slightly larger than upper surface 101, but not limited to this.
In structure, PL structure 20 includes one first photoluminescent layers (hereinafter referred to as the first PL layers) 21, one smooth septum pellucidum
Absciss layer 22, one second photoluminescent layers (hereinafter referred to as the 2nd PL layers) 23 and the transparent moisture barrier layers 24 of light, along LED core
Sequentially storehouse is arranged the normal direction of the upper surface 101 of piece 10, it is, the first PL layer 21 is set to the upper table of LED chip 10
On face 101, light transparent spacer layer 22 is set on the first PL layer 21, and the 2nd PL layer 23 is set in light transparent spacer layer 22, and
The transparent moisture barrier layers 24 of light are set on the 2nd PL layer 23.
First PL layer 21 can produce the light (such as feux rouges) compared with low energy rank when the first light excites, and may include one
First high molecular material 211 and the fluorescent material (such as red fluorescence material) 212 of a lower excitation energy rank, to make to illustrate letter
Just, below by the progress technology explanation by taking red fluorescence material 212 and its feux rouges issued as an example.Red fluorescence material 212 can
Equably mixing and glued (fixation) are in the first high molecular material 211.Red fluorescence material 212 is by compared with Gao Nengjie
After the excitation of one light, the first light portion can be converted into feux rouges；In other words, after the first light passes through the first PL layer 21, by
It is converted into feux rouges in some, the luminous intensity of non-switched first light in part can decrease；Technology contents in this respect
Thereafter it will be further illustrated refering to Fig. 2A.In addition, compared to aftermentioned quanta point material (such as green quanta point material) 232,
Fluorescent material (such as red fluorescence material) 212 can bear higher temperature, therefore can be closer to or contact LED chip 10.
Red fluorescence material 212 for example may include but not limit: monofluoride fluorescent material or mononitride fluorescent material
Etc. the person that can produce feux rouges；Fluoride fluorescent material may be, for example, KSF fluorescent material, at least may include following one of them: (A)
A2[MF6]:M4+, wherein A is selected from Li, Na, K, Rb, Cs, NH4And combinations thereof, M is selected from Ge, Si, Sn, Ti, Zr and combinations thereof；(B)
E2[MF6]:M4+, wherein E is selected from Mg, Ca, Sr, Ba, Zn and combinations thereof, and M is selected from Ge, Si, Sn, Ti, Zr and combinations thereof；(C)
Ba0.65Zr0.35F2.70:M4+；Or (D) A3[ZrF7]:M4+, wherein A is selected from Li, Na, K, Rb, Cs, NH4And combinations thereof.Other fluorinations
Object fluorescent material may be, for example, MGF fluorescent material, at least may include following one of them: (x-a) MgO. (a/2)
Sc2O3.yMgF2.cCaF2.(1-b)GeO2.(b/2)Mt2O3:zMn4+；Wherein, 2.0≤x≤4.0,0 < y < 1.5,0 < z < 0.05,0
≤ a < 0.5,0 <b < 0.5,0≤c < 1.5, y+c < 1.5, and Mt are at least one kind of in Al, Ga and In.
Light caused by the fluoride fluorescent material of mentioned kind has relatively narrow half-wave wide, the light source that can be excited
Wavelength less than 500 nanometers, therefore will not the green light caused by the 2nd PL layer 23 excite, therefore the whole of light emitting device 1 can be increased
Body light extraction yield (Light Extraction Efficiency)；Technology contents in this respect will come into one thereafter refering to Fig. 2 C
Walk explanation.
First high molecular material 211 may include but not limit: a resin material or a silica gel material.Due to the first PL layer 21
It is closer to heat source LED chip 10, therefore the first high molecular material 211 need to have preferable heat resistance, for example, silicon of a heat cure
Glue material (Silicone) may include a platinum catalyst silica gel (Platinum Silicone) or a tin catalyst silica gel (Tin
Silicone), wherein platinum catalyst silica gel has preferable heat resistance, therefore light emitting device 1 preferably selects platinum catalyst silicon
Glue is as the first high molecular material 211.Platinum catalyst silica gel is to contain platinum catalyst in silica gel, after silica gel can be helped heated
Rapid curing；However, platinum catalyst is easy by several chemical components passivation (Deactivated) or poisons (Poisoned),
So that the curing reaction of silica gel is suppressed (Inhibition), and then cause silica gel that can not solidify or only partially cured.It may
Make that platinum catalyst is passivated or the chemical component that poisons includes: sulphur, sulfide, sulfhydryl compound, tin, fatty acid pink salt, phosphorus, phosphine,
Phosphite, arsenic, arsine, antimony, talan, selenium, selenides, tellurium, tellurides, amine, amide, ethanol amine, N- methylethanolamine, three
Ethanol amine, chelate, EDTA (ethylenediaminetetraacetic acid), NTA (nitriloacetic acid),
Ethyl alcohol, methanol etc..Therefore, when platinum catalyst silica gel is as the first high molecular material 211, preferably it is considered as the blunt of platinum catalyst
Change or poisoning problem.
2nd PL layer 23 can produce the light (such as green light) compared with Gao Nengjie when the first light excites, and may include one
Second high molecular material 231 and a higher excitation energy rank quanta point material (such as green quanta point material, it is hereinafter referred to as green
Color QD material) 232, to make illustrative ease, below by by taking green QD material 232 and its green light issued as an example progress technology say
It is bright.Green QD material 232 can be mixed equably and glued (fixation) is in the second high molecular material 231.Green QD material 232 exists
After the first light irradiation compared with Gao Nengjie, green light can produce.Green QD material 232 for example may include but not limit: selenizing
Cadmium (CdSe), indium phosphide (InP), zinc sulphide (ZnS), zinc selenide (ZnSe) or zinc telluridse (ZnTe) etc. can produce green light person.This
Outside, the quantum dot crystal structure of green QD material 232 generally comprises kernel (core) and protection shell (shell).
It, can since generated feux rouges has relatively narrow halfwidth to aforementioned fluoride fluorescent material when the first light excites
Match in excellence or beauty high-purity feux rouges caused by quanta point material.Therefore, in the application of wide color gamut display backlight, light emitting device 1
A preferred embodiment are as follows: LED chip 10 is one for the fluorescent material for issuing the LED chip of blue light, the first PL layer 21 is included
The fluoride fluorescent material and the 2nd PL layer 23 that higher degree feux rouges can be issued include a green that can issue higher degree green light
Quanta point material.
Second high molecular material 231 may include but not limit: a resin material or a silica gel material etc. have good light transmission
Rate person.Since quanta point material is also easy to produce oxidation when the high temperature, therefore less suitable for using heat cure glue material, therefore the second macromolecule
Material 231 is preferably a ultraviolet curing glue, and the second high molecular material 231 can be consolidated under room temperature by the irradiation of ultraviolet light
Change, is not required to just curable under high temperature such as heat-curable glue.In this way, high temperature will not be undergone when the second high molecular material 231 solidifies
And make the efficiency attenuation of green QD material 232.
The chemical component for making platinum catalyst be passivated or poison is generally comprised in ultraviolet curing glue, causes the silicon for needing heat cure
Glue can not solidify.Therefore, the second high molecular material 231 constituted with ultraviolet curing glue cannot be with heat-curable glue structure in processing procedure
At the first high molecular material 211 be in contact, otherwise will lead to the first high molecular material 211 can not solidify.
In the present embodiment, the first PL layer 21 and the 2nd PL layer 23, the second macromolecule material can be isolated in light transparent spacer layer 22
The chemical component that platinum catalyst can be made to be passivated or poison among material 231 can not diffuse to the first high molecular material 211, so that first
High molecular material 211 can be fully cured.It follows that light transparent spacer layer 22 can improve the first high molecular material 211 and second
High molecular material 231 material property or the incompatible problem of curing process each other.Specifically, light transparent spacer layer 22 to every
It from the first PL layer 21 and the 2nd PL layer 23, is in contact to avoid the two, and the 2nd PL layer 23 can be made further from LED chip 10, with
Reduce influence of the thermal energy of LED chip 10 for the 2nd PL layer 23.Light transparent spacer layer 22 may include but not limit a transparent nothing
Machine material (such as quartz or glass etc.) or a high molecular material etc. have good light transmittance person.In addition, light transparent spacer layer 22
Do not include the chemical component that platinum catalyst can be made to be passivated or poison preferably, therefore can contact the first high molecular material 211.
In addition, the transparent moisture barrier layers 24 of the light of light emitting device 1 are to hinder passing through for aqueous vapor, to the 2nd PL layer 23
Quanta point material forms protection, prevents it from generating oxidation.The transparent moisture barrier layers 24 of light may include but not limit a transparent inorganic
Material (such as quartz or glass etc.) or a high molecular material etc. have good light transmittance person；When if high molecular material, select
With low aqueous vapor permeability person, such as there is the aqueous vapor permeability for being not more than 20g/ (m2day) when with a thickness of 1 centimetre.Light is saturating
Bright separation layer 22, which also can be selected, has low aqueous vapor permeability person, such as has when with a thickness of 1 centimetre and be not more than 20g/ (m2day)
Aqueous vapor permeability, therefore the transparent moisture barrier layers of light 24 and light transparent spacer layer 22 will include the 2nd PL layers of quanta point material
23 it is sandwiched therebetween so that the aqueous vapor or oxygen in external environment are difficult to touch the green QD material 232 in the 2nd PL layer 23,
Aqueous vapor or oxygen is reduced or avoided and infiltrates into green QD material 232 from above or below.
Moisture barrier catoptric arrangement (hereinafter referred to as catoptric arrangement) 30 can reflex reflexting device side issue light simultaneously
Guiding front goes out light.Specifically, catoptric arrangement 30 covers the side 203 of PL structure 20 and the facade 103 of LED chip 10, but
The top surface 201 of PL structure 20 is not covered, therefore can reflect the light emitted by the facade 103 and side 203, makes light towards PL
It projects the top surface 201 of structure 20.Catoptric arrangement 30 is not less than the lower surface 102 of LED chip 10, does not cover lower surface 102 and electricity
Pole group 104.The top surface 301 of catoptric arrangement 30 can substantially be flush to the top surface 201 of PL structure 20, since light emitting device 1 is chip
Grade encapsulating light emitting device, can be directly joined on printed circuit board or other application substrate, therefore have lower thermal resistance to drop
The operation temperature of low light emitting device, therefore the bottom surface 302 of catoptric arrangement 30 can not be lower than the height of electrode surface 102 to avoid electrode group
104 engaged with substrate weld pad it is bad, preferably, the bottom surface 302 of catoptric arrangement 30 can substantially be flush to the electrode surface of LED chip 10
102.In addition, catoptric arrangement 30 can also cover the bottom surface 202 of PL structure 20 beyond the part of the upper surface 101 of LED chip 10.Though
The 2nd PL layer 23 for so including quanta point material is arranged between the transparent moisture barrier layers 24 of light and light transparent spacer layer 22, is made
The aqueous vapor obtained in external environment is difficult to touch the green QD material 232 in the 2nd PL layer 23, but aqueous vapor still can be via the 2nd PL
The side of layer 23 is penetrated into.Another effect of the catoptric arrangement 30 of this light emitting device is that the aqueous vapor in environment is hindered to penetrate into, to reduce
Or aqueous vapor or oxygen is avoided to touch the possibility of green QD material 232 from side；Therefore, through moisture barrier catoptric arrangement 30,
The transparent moisture barrier layers 24 of light and the cladding of 22 three of light transparent spacer layer can further provide for green 232 moisture of QD material resistance
Every protection, to reduce the generation of photooxidation.
To make catoptric arrangement 30 that there is above-mentioned characteristic, it preferably may include a third high molecular material 31 and be mixed in
The light scattering particle 32 of the one of third high score material 31；Third high molecular material 31, which can be selected, has lower aqueous vapor permeability person
(such as with a thickness of at 1 centimetre be not more than 20g/m2/day), such as may include a resin material or a silica gel material, so that aqueous vapor
It is difficult to pass through；Light scattering particle 32 concretely titanium dioxide (TiO2), boron nitride (BN), silica (SiO2) or three oxygen
Change two aluminium (Al2O3) etc., and its weight percent in catoptric arrangement 30 is not less than 20%, to reach good reflection effect
Fruit.
Please refer to Fig. 2A, the luminous intensity that the first light how is reduced using the first PL layer 21 then will be further illustrated
The luminous intensity that can bear to green QD material 232, to avoid the generation of quanta point material photooxidation.Specifically, LED chip
For 10 the first light issued by taking blue light B as an example, initial luminous intensity is L0, when blue light B passes through the first PL layer 21, one portion
Part (i.e. first part) can be converted into feux rouges R.The light intensity for another part (the i.e. second part) that the residue of blue light B is not converted
Degree is L1, is less than initial light intensity L0.Remaining second part of blue light B then partly excites green QD material 232 again, so
It is converted into green light G afterwards (it is, a part of reconvert of the second part is at green light G).Therefore, finally from the top of PL structure 20
The light that face 201 (that is, light-emitting surface of light emitting device 1) issues includes blue light B, feux rouges R and green light G, can be mixed and to form one white
Light.
Therefore, disclosed herein light emitting device 1 in green QD material 232 by the photograph by blue light B and feux rouges R
It penetrates, generates green light G since the energy rank of feux rouges R is not enough to excite green QD material 232, therefore green QD material 232 will not be made to produce
Raw free electron and hole, and free electron will activate (electron-active) quanta point material and it is made to generate photooxidation, because
This green QD material 232 is not likely to produce photooxidation phenomenon when being irradiated by feux rouges R.
Lead to quanta point material since green QD material 232 still can generate a large amount of free electron under blue light B irradiation
Photooxidation, and disclosed herein light emitting device 1 can substantially lower and be irradiated in the blue light B intensity of green QD material 232.Specifically
For, blue light B initial light intensity provided by LED chip 10 is L0, for purposes of illustration only, being divided into first part and second
Partly；After the first PL layer 21, the blue light B of first part is converted to feux rouges R and non-switched second part blue light B, initially
Blue light strength L0 will be reduced to blue light strength L1 corresponding to the second part, this blue light strength L1 is not more than green QD material 232
The luminous intensity that can bear, therefore under the blue light B of luminous intensity L1 irradiation, green QD material 232 is still not likely to produce photooxidation phenomenon,
And then make green QD material 232 that there is more stable luminous frequency spectrum and luminous efficiency, and there is longer service life.
By the blue light B (the second part) not converted after the first PL layer 21, the measurement of luminous intensity L1 can be for lower section
Formula: before the setting of the 2nd PL layer 23 (or by the 2nd PL layer 23 remove), driving LED chip 10 makes its sending blue light B, then from
The intensity value of the top measurement blue light B of first PL layer 21.In addition, in being irradiated in a period of time by the blue light B with luminous intensity L1
Under, if the light that green QD material 232 is converted out does not have apparent strength retrogression (such as no more than 20% or no more than 10%
Strength retrogression) or without apparent wavelength shift (such as no more than 10 nanometers or little 5 nanometers of peak wavelength is inclined
Move), the luminous intensity L1 that should can reason out blue light B is not more than the luminous intensity that green QD material 232 can bear.
Green QD material 232 is different according to its structure and material, and the luminous intensity for the first light that can bear also can not
Together；Such as at present blue light luminous intensity that known green QD material 232 can be born be not more than 10W/cm2, be not more than 5W/cm2 or
No more than 2W/cm2.Since the development of science and technology will constantly improve the structure of quanta point material it can be expected to quanta point material institute
The luminous intensity upper limit that can be born should can be promoted, such as more than 10W/cm2.
The luminous intensity upper limit for exciting the incident light of quanta point material can usually be produced from it quotient or supplier provides, also
It can test and learn via experiment.For example, irradiating blue light B (or first light of other high energy ranks) the extremely green of different luminous intensities
On QD material 232, green QD material 232 is then measured in the variation for converting out green intensity and peak wavelength in a period of time
Amount；Significantly decay by whether the intensity that light is converted out in observation has (such as it is strong no more than 20% or no more than 10%
Degree decaying), wavelength have significantly offset (such as no more than 10 nanometers or little 5 nanometers of peak wavelength shift), then can measure
The luminous intensity for the blue light B that green QD material 232 can bear under long-time operation out.
Fig. 2 B is the luminescent spectrum measurement of a preferable embodiment of light emitting device 1, and the LED chip 10 of this example can
Issuing a peak wavelength is 443 nanometers of blue light B, uses KSF red fluorescence material that peak wavelength is 630 nanometers as first
The fluorescent material of the lower excitation energy rank of PL layer 21, and use peak wavelength be 540 nanometers InP green quanta point material as
The quanta point material of the higher excitation energy rank of 2nd PL layer 23.Under blue light excitation, the KSF phosphor of closer LED chip 10
Material can first absorb the blue light B that a part of LED chip 10 is issued, and convert issue one with narrow halfwidth feux rouges R, and not by
The blue light B and feux rouges R of conversion are then passed to the 2nd PL layer 23, wherein the blue light B not converted is again by the green of the 2nd PL layer 23
After color quantum dot material part absorbs and sending half the height width is converted as 39 nanometers of green light G, and is rendered as green light in Fig. 2 B
Frequency spectrum G.Blue light frequency spectrum B shown in Fig. 2 B be part not by the 2nd PL layer 23 convert blue light B, and feux rouges R due to energy rank compared with
Green quanta point material that is low and being not enough to excite the 2nd PL layer 23, therefore can largely export outside light emitting device and be rendered as figure
Feux rouges frequency spectrum R shown in 2B.It, can be effective since about 1/3 blue light B intensity-conversion is feux rouges R by the first PL layer 21
The luminous intensity that about 1/3 blue light B is irradiated in green quanta point material is reduced, it is made less to easily cause photooxidation and there is longer make
Use the service life.Since this light emitting device 1 has red, the green and blue frequency spectrum of high color purity (narrow halfwidth), it is very suitable to answer
Back light for wide color gamut liquid crystal display.
Please refer to Fig. 2 C, how the first PL layer 21 described further below increases the light extraction yield of green light G.Green
The a part of green light G1 that QD material 232 is converted out can be exported outwardly to outside PL structure 20, but the green light G2 of another part can be anti-
Advance to towards LED chip 10；If the red fluorescence material 212 of the first PL layer 21 selects particular kind of fluoride fluorescent material,
The light that 500nm will not be then greater than about by wavelength excites, therefore will not be by red fluorescence material towards the green light G2 that chip 10 scatters
Material 212 is absorbed and is converted.In this way, the green light G2 to advance back towards LED chip 10 can be by red fluorescence material 212 effectively outwardly
It scatters (scattering), green light is simultaneously exported to outside light emitting device 1.Therefore, the light extraction of green light G (G1, G2) can be effectively increased
Efficiency.
Please refer to Fig. 1 C, in another state sample implementation, the 2nd PL layer 23 can further include a light scattering particle 233,
It is mixed in second high molecular material 231.Quanta point material is the particle of nano-scale, and the first light is easily penetrated without exciting
Quanta point material, therefore light scattering particle 233 increases by the first light scatter the first light in the 2nd PL layers of interior generates
Excite the probability of green QD material 232.In other words, when light scattering particle 233 can increase by the first light by the 2nd PL layer 23
Total light path, be converted into the ratio of green light to increase by the first light.In addition, light scattering particle 233 is in the 2nd PL layer 23
Weight percent be preferably no greater than 20%, no more than 15% or no more than 10%, to provide suitable light transmittance, avoid
Excessively stop the first light.
In another state sample implementation, LED chip 10 is a deep blue-light LED chip, a purple LED chip or a ultraviolet light
LED chip, the first light issued are dark blue light, purple light or ultraviolet light.At this point, the 2nd PL layer 23 can further include it is another compared with
The quanta point material 234 of height excitation energy rank, may be, for example, a blue quanta point material 234, can be mixed in the second macromolecule material
In material 231, it can also be mixed in (not shown) in another high molecular material different from the second high molecular material 231.Dark blue light or
Ultraviolet light can be converted into blue light by blue quanta point material 234, and making light caused by light emitting device 1 may include blue light, feux rouges
And the frequency spectrums such as green light.
It is the explanation of the technology contents of light emitting device 1 above, then illustrates in the technology of other embodiments according to the present invention
Hold, and the technology contents of each embodiment can should refer to mutually, therefore identical part will be omitted or simplified.In addition, each embodiment
Technology contents can should apply mutually, combination collocation.
It please refers to shown in Fig. 3, for the schematic diagram of the light emitting device 2 of the 2nd preferred embodiment according to the present invention.Shine dress
The PL structure 20 for setting 2 further includes the transparent heat-conducting layer 25 of a light；It is transparent with light that the transparent heat-conducting layer 25 of light may be disposed at the 2nd PL layer 23
Between moisture barrier layers 24 and/or it is set between the 2nd PL layer 23 and light transparent spacer layer 22, in other words, the 2nd PL layer 23
Top surface and/or bottom surface all transparent heat-conducting layers 25 of one light of settable covering.
The transparent heat-conducting layer 25 of light have good pyroconductivity (i.e. low thermal resistance), and be greater than the transparent moisture barrier layers 24 of light or
The pyroconductivity of light transparent spacer layer 22；In addition, the transparent heat-conducting layer 25 of light also needs have good light transmittance.Therefore, light is transparent
Heat-conducting layer 25 may include but not limit: a film metal, a grid-shaped metal, a transparent conductive oxide or a graphene etc.；
Wherein, transparent conductive oxide may be, for example, tin indium oxide (Indium Tin Oxide, ITO), and light transmittance can be greater than 90%,
And pyroconductivity (in 25 DEG C) is about 10~12W/mK；The pyroconductivity of graphene is more up to 5300W/mK.Light is transparent thermally conductive
Layer 25 can make the 2nd PL layer 23 generated thermal energy when light conversion rapidly transmit or disperse outward, to reduce green QD material
232 operation temperature, and then reduce influence of the thermal energy for green QD material 232.
Catoptric arrangement 30 also includes selectively a Heat Conduction Material (not shown), is mixed in third high molecular material 31,
So that the pyroconductivity of catoptric arrangement 30 is not less than the transparent moisture barrier layers 24 of light or the pyroconductivity of light transparent spacer layer 22.Such as
This, the thermal energy of the 2nd PL layer 23 also can be transmitted effectively by catoptric arrangement 30 outward, reduce high temperature to green QD material 232
It influences.Heat Conduction Material may include graphene or ceramic material etc., and wherein ceramic material can (pyroconductivity be about for aluminium nitride
285W/mK) or aluminium oxide.Heat Conduction Material also may include metal material, preferably can avoid it and touches LED chip 10, such as
The catoptric arrangement 30 comprising metal thermal conductive material is set to be covered in aftermentioned light guide structure 40 (as shown in Figure 4 B), in other words, instead
Penetrate the facade 103 that structure 30 covers LED chip 10 indirectly.
It please refers to shown in Fig. 4 A, for the schematic diagram of the light emitting device 3 of the 3rd preferred embodiment according to the present invention.It shines
The PL structure 20 of device 3 further includes the transparent separate layer 26 of a light, is set on the upper surface 101 of LED chip 10；First PL layers
21 are set on the transparent separate layer 26 of light, not directly covering, contact LED chip 10.In this way, the 2nd PL layer 23 can be located farther from
Hotter LED chip 10, to be further reduced the influence of 10 pairs of green QD materials 232 of LED chip of high temperature.The transparent separate layer of light
26 may include but not limit a transparent inorganic material (such as quartz or glass etc.) or a high molecular material (such as silica gel) etc.；If
When for high molecular material, preferably can be selected has low aqueous vapor permeability person, to reduce aqueous vapor and oxygen inside light emitting device
A possibility that infiltration.
It please refers to shown in Fig. 4 B, in another aspect of the 3rd preferred embodiment of the invention, light emitting device 3 further includes one
Light guide structure 40.Light guide structure 40 may include a high molecular material (such as the good light transmission such as silica gel, epoxy resin, rubber
Rate person), and the facade 103 of LED chip 10 can be covered, then covered by catoptric arrangement 30.More specifically, light guide structure 40
It may include a top surface 401 and an inclined side 402, top surface 401 can be flushed with the upper surface 101 of LED chip 10, and inclined side
402 relative to LED chip 10 facade 103 be inclination；Inclined side 402 can be concavity curved surface (as shown in the figure), also can be flat
Face or convex curved surface (not shown).In addition, inclined side 402 is also directly covered by catoptric arrangement 30, therefore catoptric arrangement 30 has
It fits a corresponding medial slope (or introversion prism) with inclined side 33.When inclined side 402 is by catoptric arrangement 30
When directly covering, the facade 103 of LED chip 10 is covered indirectly by catoptric arrangement 30.
Further, since wafer-level package light emitting device is not required to package support, therefore under same package volume, the present invention
Disclosed light emitting device can have biggish light-emitting area, i.e. the area of PL structure 20 can be larger, therefore, when LED chip 10
When the blue light B issued is irradiated in the PL structure 20 of larger area, then it can effectively reduce the quantum dot being irradiated in PL structure 20
The unit area blue light strength of material, therefore the photooxidation phenomenon of quanta point material can be further reduced.Light guide structure 40 cooperates
Catoptric arrangement 30 can effectively reflex to the first light of LED chip 10 laterally issued in PL structure 20, so that the first light
Line relatively evenly irradiates PL structure 20, reduces unit area blue light strength, reduces the photooxidation phenomenon of quanta point material to increase
Its service life；Light guide structure 40 cooperates the technology contents of catoptric arrangement 30 can be previously applied with further reference to applicant
The TaiWan, China patent application case of application number 106103239.
Fig. 5 A to Fig. 5 I is please referred to, then the manufacturer of the light emitting device of the preferred embodiment by explanation according to the present invention
Method, the manufacturing method can produce the light emitting device 1~3 the same as or similar to above-described embodiment, therefore in the technology of manufacturing method
Holding can mutually refer to the technology contents of light emitting device 1~3, apply.
As shown in Figure 5A, provide first or form out the transparent moisture barrier layers 24 of light, then by spraying (spraying),
Rotary coating (spin coating) or printing (printing) etc. modes are directly in forming the in the transparent moisture barrier layers 24 of light
Two PL layers 23；It is, after uncured second high molecular material 231 and green QD material 232 are first mixed, then through upper
The mode of stating is formed in the transparent moisture barrier layers 24 of light, is solidified to the second high molecular material 231, i.e. the 2nd PL layer 23 of formation, if
Second high molecular material 231 is heat cure silica gel, then heat cure need to be carried out in inert gas or vacuum environment.In addition, second
After PL layer 23 also can be separately formed, then conform to the transparent moisture barrier layers 24 of light.
As shown in Figure 5 B, then, in directly forming light transparent spacer layer 22 on the 2nd PL layer 23, such as spraying, rotation can be adopted
Turn the modes such as coating or printing, or light transparent spacer layer 22 is conformed into the 2nd PL layer 23.As shown in Figure 5 C, thereafter, Yu Guang
The first PL layer 21 is directly formed in transparent spacer layer 22, such as can adopt the modes such as spraying, rotary coating or printing, or using open
Skill disclosed by the U.S. patent application case (the TaiWan, China patent corresponding to certificate number I508331) of number US2010/0119839
Art；Alternatively, after the first PL layer 21 independently forms, then conform to light transparent spacer layer 22.
In this way, the PL structure 20 of a plurality of light emitting devices 1 can be produced, still it is integrally connected each other.In addition, shown in Fig. 5 A
The step of in, can in the 2nd PL layer 23 formation before and/or after, selectively form the transparent heat-conducting layer 25 of light, it is a plurality of to produce
The PL structure 20 of light emitting device 2.As shown in Figure 5 D, selectively in forming the transparent separate layer 26 of light on the first PL layer 21, with system
Make the PL structure 20 of a plurality of light emitting devices 3.
As shown in fig. 5e, after producing PL structure 20, then a plurality of LED chips 10 are inverted, make its 101 court of upper surface
Under (lower surface 102 is upward), in face of the bottom surface of PL structure 20 202, then LED chip 10 is conformed to the outer layer of PL structure 20
(i.e. the transparent separate layer 26 of light or the first PL layer 21).LED chip 10 be bonded after the completion of, be optionally formed light guide structure 40 in
On first PL layer 21 or the transparent separate layer 26 of light, the specific generation type of light guide structure 40 can refer to the applied Shen of applicant
Please numbers 106103239 TaiWan, China patent application case.
As illustrated in figure 5f, after the completion of LED chip 10 is bonded, the grade PL structure 20 being integrally connected is cut, its separation is made；Often
One PL structure 20 fits with one of LED chip 10, to constitute a light emitting structure.As depicted in fig. 5g, then, by this etc.
Light emitting structure is arranged on a separated type material 900, constitutes a light emitting structure array；When arrangement, the top for making PL structure 20 may be selected
Face 201 conforms to separated type material 900 (as shown in the figure), or make the lower surface 102 of LED chip 10 conform to separated type material 900,
And electrode group 104 is embedded in (not shown) in separated type material 900.
As illustrated in fig. 5h, then, in forming catoptric arrangement 30 on separated type material 900 between light emitting structure, to cover PL
The side 203 of structure 20 and the inclined side 402 (covering the facade 103 of LED chip 10 indirectly) of light guide structure 40, but not
There is the lower surface 102 of covering LED chip 10；The formation of catoptric arrangement 30 can adopt the methods of model or dispensing.30 shape of catoptric arrangement
Cheng Hou, can get a plurality of light emitting devices 3 (or other kinds of light emitting device), those light emitting devices 3 are interconnected with one another.Such as
Shown in Fig. 5 I, finally, a cutting step is taken to separate the light emitting device being connected 3, the luminous dress being just separated from each other
Set 3；Wherein, it can be separated before cutting or after cutting by separated type material 900 with light emitting device 3.
Referring back to Fig. 5 C or Fig. 5 D, after the PL structure 20 being integrally connected is produced, cutting step also can be directly carried out, is made
It is separated into a plurality of PL structures 20；Thereafter, PL structure 20 and LED chip 10 are fitted, re-forms catoptric arrangement 30 for two
Person's cladding, the also production of achievable light emitting device 3 (or other kinds of light emitting device).
Fig. 6 A to Fig. 6 D is please referred to, PL structure 20 can also take following manner to make.As shown in Figure 6A, first provide or
The transparent moisture barrier layers 24 of light are formed out, then in the 2nd PL layer 23 of formation in the transparent moisture barrier layers 24 of light.As shown in Figure 6B,
Then, light transparent spacer layer 22 is in addition provided or formed again, and forms the first PL layer 21 in light transparent spacer layer 22；Light is transparent
Separation layer 22 and the first PL layer 21 are neither to sequentially form as Fig. 5 B on the 2nd PL layer 23.
In other words, the combination of the transparent moisture barrier layers 24 of light and the 2nd PL layer 23, with light transparent spacer layer 22 and with first
The combination of PL layer 21 is to be made respectively, and the processing procedure of the two will not influence each other.Therefore, if the first PL layer 21 it is first high
When molecular material 211 is heat-curable glue, the high temperature for carrying out heat cure does not interfere with the green QD material of the 2nd PL layer 23
232, therefore the efficiency of green QD material 232 will not decay because of the heat cure processing procedure for undergoing the first PL layer 21.
As shown in Figure 6 C, thereafter, LED chip 10 is conformed into the first PL layer 21, and selectively, in the first PL layer 21
The transparent separate layer 26 of upper formation light and/or light guide structure 40.Again as shown in Figure 6 D, by light transparent spacer layer 22 and the 2nd PL layers
23 fit, to produce PL structure 20 as shown in fig. 5e.It can take such as the step of Fig. 5 F to Fig. 5 I, mutually be divided later
From light emitting device 3 or other light emitting devices.
In summary, the light emitting device that presently preferred embodiments of the present invention is proposed can effectively improve the oxygen of quanta point material
Change phenomenon, and aqueous vapor and oxygen in outside air can be reduced or avoided and touch quanta point material；Use can be also effectively prevented from
It is incompatible in the high molecular material and the high molecular material for fixing fluorescent material, the two material property of fixed quanta point material
The problem of；Also the thermal decay of quanta point material can be effectively improved, the temperature that quanta point material is born, Yi Jizeng are reduced
Add the light extraction efficiency of light emitting device.The manufacturing method of light emitting device can produce it is various have effects that above-mentioned light emitting device,
And quanta point material can be made to be not subject to high temperature in manufacturing process.
The above embodiments are only used to enumerate state sample implementation of the invention, and illustrate technical characteristic of the invention, not
For limiting protection category of the invention.Any skilled person can the arrangement of unlabored change or equality belong to
The range advocated of the present invention, the scope of the present invention should be subject to claim.
Claims (24)
1. a kind of light emitting device, includes:
One crystal covering type LED chip, to provide one first light, which is a blue light, a dark blue light, a purple light or one
Ultraviolet light；
One luminescence generated by light structure, be set on a upper surface of the crystal covering type LED chip and including one first photoluminescent layers,
One smooth transparent spacer layer, one second photoluminescent layers and the transparent moisture barrier layers of a light, the light transparent spacer layer be set to this
On one photoluminescent layers, which is set in the light transparent spacer layer, and the transparent moisture barrier layers of the light are set
Be placed on second photoluminescent layers, wherein first photoluminescent layers include one first high molecular material and be mixed in this
The fluorescent material of a lower excitation energy rank in one high molecular material, and second photoluminescent layers include one second macromolecule material
The quanta point material of a higher excitation energy rank expected and be mixed in second high molecular material；And
One moisture barrier catoptric arrangement covers the one side of the luminescence generated by light structure and a facade of the crystal covering type LED chip, and
Not less than an electrode surface of the crystal covering type LED chip；
Wherein, the fluorescent material of the lower excitation energy rank of first photoluminescent layers is to turn some of first light
It is changed to the visible light of a longer wavelength, so that the luminous intensity of first light of another part that do not converted is no more than should be compared with
The luminous intensity that the quanta point material of height excitation energy rank can bear.
2. the light emitting device as described in claims 1, wherein the fluorescent material of the lower excitation energy rank includes a red fluorescence material
Material, the quanta point material of the higher excitation energy rank include a green quanta point material.
3. the light emitting device as described in claims 2, wherein the light intensity for first light that the green quanta point material can bear
Degree is not more than 10W/cm2。
4. the light emitting device as described in claims 2, wherein the luminescence generated by light structure further includes the transparent heat-conducting layer of a light, and the light is saturating
It is second photic that bright heat-conducting layer is set between second photoluminescent layers and the transparent moisture barrier layers of the light and/or is set to this
Between luminescent layer and the light transparent spacer layer；Wherein, the pyroconductivity of the transparent heat-conducting layer of the light is greater than the transparent moisture barrier of the light
The pyroconductivity of layer or the light transparent spacer layer.
5. the light emitting device stated such as claims 4, wherein the transparent heat-conducting layer of the light includes a film metal, a grid-shaped metal, one
Transparent conductive oxide or a graphene.
6. such as the described in any item light emitting devices of claims 2 to 5, wherein the luminescence generated by light structure further includes the transparent separation of a light
Layer, first photoluminescent layers are set on the transparent separate layer of the light.
7. further including a light guide structure such as the described in any item light emitting devices of claims 2 to 5, light guide structure covering should
The facade of crystal covering type LED chip, the light guide structure include an inclined side, and the inclined side is relative to crystal covering type LED
The facade of chip is inclination and is covered by the moisture barrier catoptric arrangement.
8. such as the described in any item light emitting devices of claims 2 to 5, wherein first high molecular material is a heat-curable glue and should
Second high molecular material is a ultraviolet curing glue.
9. such as the described in any item light emitting devices of claims 2 to 5, wherein the light transparent spacer layer and the transparent moisture barrier of the light
Layer respectively includes a transparent inorganic material.
10. such as the described in any item light emitting devices of claims 2 to 5, wherein the light transparent spacer layer and the transparent moisture barrier of the light
Layer respectively includes a high molecular material, has when with a thickness of 1 centimetre and is not more than 20g/ (m2Day aqueous vapor permeability)
(WVTR)。
11. such as the described in any item light emitting devices of claims 2 to 5, wherein the moisture barrier catoptric arrangement includes a third high score
Sub- material and the light scattering particle being mixed in the third high score material.
12. such as the light emitting device of claims 11, wherein the third high molecular material has when with a thickness of 1 centimetre to be not more than
20g/(m2Day aqueous vapor permeability).
13. such as the described in any item light emitting devices of claims 2 to 5, wherein the pyroconductivity of the moisture barrier catoptric arrangement is not small
In the light transparent spacer layer or the pyroconductivity of the transparent moisture barrier layers of the light.
14. such as the described in any item light emitting devices of claims 2 to 5, wherein it is light scattering that second photoluminescent layers further include one
Particle, the light scattering particle are mixed in second high molecular material.
15. such as the described in any item light emitting devices of claims 2 to 5, wherein the red fluorescence material includes monofluoride phosphor
Material or mononitride fluorescent material.
16. the light emitting device as described in claims 15, wherein the fluoride fluorescent material includes at least following one of them: (A)
A2[MF6]:M4+, wherein A is selected from Li, Na, K, Rb, Cs, NH4And combinations thereof, M is selected from Ge, Si, Sn, Ti, Zr and combinations thereof；(B)
E2[MF6]:M4+, wherein E is selected from Mg, Ca, Sr, Ba, Zn and combinations thereof, and M is selected from Ge, Si, Sn, Ti, Zr and combinations thereof；(C)
Ba0.65Zr0.35F2.70:M4+；Or (D) A3[ZrF7]:M4+, wherein A is selected from Li, Na, K, Rb, Cs, NH4And combinations thereof.
17. such as the described in any item light emitting devices of claims 2 to 5, wherein the nitride fluorescent material include at least it is following wherein
One:
(x-a)MgO.(a/2)Sc2O3.yMgF2.cCaF2.(1-b)GeO2.(b/2)Mt2O3:zMn4+；
Wherein, 2.0≤x≤4.0,0 < y < 1.5,0 < z < 0.05,0≤a < 0.5,0 <b < 0.5,0≤c < 1.5, y+c < 1.5 and Mt
It is at least one kind of in Al, Ga and In.
18. such as the described in any item light emitting devices of claims 2 to 5, wherein second photoluminescent layers further include a blue quantum
Point material.
19. a kind of manufacturing method of light emitting device, includes:
One luminescence generated by light structure and a crystal covering type LED chip are fitted；And
Form a moisture barrier catoptric arrangement, with cover the luminescence generated by light structure one side and the crystal covering type LED chip one
Facade；
Wherein, the luminescence generated by light structure include one first photoluminescent layers, a smooth transparent spacer layer, one second photoluminescent layers and
The transparent moisture barrier layers of one light, the light transparent spacer layer are set on first photoluminescent layers, which sets
It is placed in the light transparent spacer layer, and the transparent moisture barrier layers of the light are set on second photoluminescent layers, this is first photic
Luminescent layer covers a upper surface of the crystal covering type LED chip, which includes one first high molecular material and mix
Together in the fluorescent material of the lower excitation energy rank in first high molecular material, and second photoluminescent layers include one second
High molecular material and the quanta point material for the higher excitation energy rank being mixed in second high molecular material, the moisture barrier are anti-
Penetrate the electrode following table that structure is not less than the crystal covering type LED chip；
Wherein, for the crystal covering type LED chip to provide one first light, which is a blue light, a dark blue light, a purple light
Or a ultraviolet light, and the fluorescent material of the lower excitation energy rank of first photoluminescent layers is to by one of first light
Part is converted to the visible light of a longer wavelength, is somebody's turn to do so that the luminous intensity of another part that do not converted of first light is not more than
The luminous intensity that the quanta point material of higher excitation energy rank can bear.
20. the manufacturing method of the light emitting device as described in claims 19, further includes: the luminescence generated by light structure is formed, it includes:
There is provided the light transparent moisture barrier layers；
Second photoluminescent layers are formed in the transparent moisture barrier layers of the light；
The light transparent spacer layer is formed on second photoluminescent layers；And
First photoluminescent layers are formed in the light transparent spacer layer.
21. the manufacturing method of the light emitting device as described in claims 19, further includes: the luminescence generated by light structure is formed, it includes:
It provides the light transparent moisture barrier layers, and forms second photoluminescent layers in the transparent moisture barrier layers of the light；
The light transparent spacer layer is provided, and forms first photoluminescent layers in the light transparent spacer layer；And
The light transparent spacer layer and second photoluminescent layers are fitted.
22. the manufacturing method of the light emitting device as described in claims 19, wherein the luminescence generated by light structure further includes that a light is transparent to lead
Thermosphere, the transparent heat-conducting layer of the light are formed between second photoluminescent layers and the transparent moisture barrier layers of the light and/or are formed in
Between second photoluminescent layers and the transparent moisture barrier layers of the light；Wherein, the pyroconductivity of the transparent heat-conducting layer of the light, which is greater than, is somebody's turn to do
The pyroconductivity of light transparent spacer layer or the transparent moisture barrier layers of the light.
23. such as the manufacturing method of the described in any item light emitting devices of claims 19 to 22, wherein the luminescence generated by light structure further includes
The transparent separate layer of one light, the transparent separate layer of the light are formed on first photoluminescent layers；Wherein, the transparent separate layer covering of the light
The upper surface of the crystal covering type LED chip.
24. it further includes to form a light guide structure such as the manufacturing method of the described in any item light emitting devices of claims 19 to 22, it should
Light guide structure is formed on first photoluminescent layers, to cover the facade of the crystal covering type LED chip, wherein the light guide
Guiding structure includes an inclined side, which is inclination relative to the facade of the crystal covering type LED chip；
Wherein, when forming the moisture barrier catoptric arrangement, so that the moisture barrier catoptric arrangement is covered this of the light guide structure and incline
Prism.
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| US16/112,381 US10879434B2 (en) | 2017-09-08 | 2018-08-24 | Quantum dot-based color-converted light emitting device and method for manufacturing the same |
| EP18192168.5A EP3454384B1 (en) | 2017-09-08 | 2018-09-03 | Quantum dot-based color-converted light emitting device |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110034226A (en) * | 2019-04-03 | 2019-07-19 | 深圳市华星光电半导体显示技术有限公司 | LED component and display device |
| WO2020258897A1 (en) * | 2019-06-25 | 2020-12-30 | 成都辰显光电有限公司 | Display panel, display device, and manufacturing method for display panel |
| CN112420898A (en) * | 2019-08-23 | 2021-02-26 | 致晶科技（北京）有限公司 | Packaging method of quantum dot film, packaged quantum dot film and application |
| CN113534311A (en) * | 2021-07-24 | 2021-10-22 | 福州大学 | Quantum dot diffusion plate and preparation method thereof |
| WO2023041043A1 (en) * | 2021-09-17 | 2023-03-23 | 江苏新云汉光电科技有限公司 | Encapsulation structure for reducing quantum dot decay and method therefor |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015516691A (en) * | 2012-05-14 | 2015-06-11 | コーニンクレッカ フィリップス エヌ ヴェ | Light emitting device having nanostructured phosphor |
| CN106206911A (en) * | 2015-05-26 | 2016-12-07 | 夏普株式会社 | Light-emitting device and image display device |
| CN106549092A (en) * | 2015-09-18 | 2017-03-29 | 新世纪光电股份有限公司 | Light emitting device and method for manufacturing the same |
| CN106560933A (en) * | 2015-10-05 | 2017-04-12 | 行家光电股份有限公司 | Light-emitting device with angle-guiding reflection structure and manufacturing method thereof |
-
2017
- 2017-09-11 CN CN201710812987.0A patent/CN109494289B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015516691A (en) * | 2012-05-14 | 2015-06-11 | コーニンクレッカ フィリップス エヌ ヴェ | Light emitting device having nanostructured phosphor |
| CN106206911A (en) * | 2015-05-26 | 2016-12-07 | 夏普株式会社 | Light-emitting device and image display device |
| CN106549092A (en) * | 2015-09-18 | 2017-03-29 | 新世纪光电股份有限公司 | Light emitting device and method for manufacturing the same |
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