CN110093160A - A kind of infrared emission fluorination matter fluorescent powder and a kind of infrared light emission device - Google Patents
A kind of infrared emission fluorination matter fluorescent powder and a kind of infrared light emission device Download PDFInfo
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- CN110093160A CN110093160A CN201811235150.5A CN201811235150A CN110093160A CN 110093160 A CN110093160 A CN 110093160A CN 201811235150 A CN201811235150 A CN 201811235150A CN 110093160 A CN110093160 A CN 110093160A
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/67—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals
- C09K11/68—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals containing chromium, molybdenum or tungsten
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/67—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals
- C09K11/68—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals containing chromium, molybdenum or tungsten
- C09K11/685—Aluminates; Silicates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Luminescent Compositions (AREA)
Abstract
The present invention provides a kind of infrared emission fluorination matter fluorescent powder and a kind of infrared light emission device.It includes Cr that infrared emission, which is fluorinated matter fluorescent powder,3+Active centre.Infrared light emission device includes that light source and above-mentioned infrared emission are fluorinated matter fluorescent powder.Light source configuration is to issue the first light, and it is 400-700 nanometers that the first light, which has wavelength,.The fluorination matter fluorescent powder of infrared emission is excited by the first light and issues the first infrared ray.The radioactive wave that first infrared ray has is 650-1000 nanometers a length of.This infrared light emission device has wide emission wavelength, can be widely used in various sensing devices.
Description
Technical field
The invention relates to a kind of infrared emission fluorination matter fluorescent powder and a kind of infrared light emission devices.
Background technique
Infrared light emission device be widely used in security industry monitoring, virtual reality device, face, iris identification and
In the fields such as food inspection.For example, infrared radiation can be determined sample on sample, then by the Wavelength distribution of reflected light
The presence and content of middle predetermined substance.
In addition, infrared light emission device can use light emitting diode (light emitting diode, LED) sending
Light excitated fluorescent powder, and it is made to launch infrared ray.Therefore, it is glimmering to develop novel and with broadband radiation spectrum infrared ray
Light powder material is one of the important goal for developing infrared light emission device at present.
Summary of the invention
It is an object of the invention to: a kind of novel infrared emission fluorination matter fluorescent powder is provided and is put comprising this infrared ray
The infrared light emission device of fluorination matter fluorescent powder is penetrated, so that this infrared light emission device has wide emission wavelength, it can be with
It is widely used in various sensing devices.
According to various embodiments of the present invention, a kind of infrared emission fluorination matter fluorescent powder is provided, includes Cr3+In activation
The heart.
According to various embodiments of the present invention, infrared emission fluorination matter fluorescent powder is selected from by following (A), (B) institute
At least one of group of composition: (A) A3B1-xF6:xCr3+, wherein A includes Li, Na, K, Rb, Cs, NH4Or combinations thereof, B packet
Containing Al, Ga or combinations thereof, and 0 < x≤1；And (B) A3B1-y-zF6:yCr3+,zNi2+, wherein A includes Li, Na, K, Rb, Cs, NH4
Or combinations thereof, B includes Al, Ga or combinations thereof, 0 < y < 1,0 < z < 1 and 0 < y+z≤1.
According to some embodiments of the present invention, infrared emission fluorination matter fluorescent powder is 400-700 nanometers via wavelength
Light source activation after, radiate infrared ray, and infrared ray has radioactive wave 650-1000 nanometers a length of.
According to some embodiments of the present invention, infrared ray has wave crest, and the peak wavelength of wave crest is received for 735-750
Rice.
According to some embodiments of the present invention, it is 90-110 nanometers that peak wavelength, which has halfwidth,.
According to various embodiments of the present invention, a kind of infrared light emission device is provided, includes light source and infrared emission
It is fluorinated matter fluorescent powder.Light source is configured to issue the first light, wherein it is 400-700 nanometers that the first light, which has wavelength,.Infrared ray
Radiofluorination matter fluorescent powder includes Cr3+Active centre, wherein infrared emission fluorination matter fluorescent powder is excited by the first light and is sent out
First infrared ray out, the first infrared ray have radioactive wave 650-1000 nanometers a length of.
According to some embodiments of the present invention, infrared emission fluorination matter fluorescent powder is selected from by following (A), (B) institute
At least one of group of composition: (A) A3B1-xF6:xCr3+, wherein A includes Li, Na, K, Rb, Cs, NH4Or combinations thereof, B packet
Containing Al, Ga or combinations thereof, and 0 < x≤1；And (B) A3B1-y-zF6:yCr3+,zNi2+, wherein A includes Li, Na, K, Rb, Cs, NH4
Or combinations thereof, B includes Al, Ga or combinations thereof, 0 < y < 1,0 < z < 1 and 0 < y+z≤1.
According to some embodiments of the present invention, infrared emission fluorination matter fluorescent powder intersperses among in encapsulating material, and seals
Package material is around light source.
According to some embodiments of the present invention, infrared light emission device further includes first wave length conversion layer, contacts light
Source surface is located above light source, and wherein first wave length conversion layer includes that infrared emission is fluorinated matter fluorescent powder.
According to some embodiments of the present invention, infrared light emission device is further included by fluorescent powder, quantum dot or combinations thereof
It is excited by the first light and issues the second light, wherein the second light includes the second infrared ray and/or visible light.First infrared ray
With the first peak wavelength, the second infrared ray has the second peak wavelength, and the first peak wavelength is different from the second peak wavelength.
Visible light has radioactive wave 400-700 nanometers a length of, and the fluorination matter fluorescent powder penetrated outside infrared ray is issued by excited by visible light
Third infrared ray, third infrared ray have radioactive wave 650-1000 nanometers a length of.
According to some embodiments of the present invention, infrared emission fluorination matter fluorescent powder and fluorescent powder, quantum dot or its group
Conjunction is mixed in encapsulating material, and encapsulating material is around light source.
According to some embodiments of the present invention, infrared light emission device further includes first wave length conversion layer, contacts light
Source surface is located above light source, and wherein first wave length conversion layer includes infrared emission fluorination matter fluorescent powder and fluorescent powder, amount
Son point or combinations thereof.
According to some embodiments of the present invention, infrared light emission device further includes first wave length conversion layer and second wave length
Conversion layer, they are between first wave length conversion layer and light source, and wherein first wave length conversion layer is fluorinated comprising infrared emission
Matter fluorescent powder, second wave length conversion layer include fluorescent powder, quantum dot or combinations thereof.
According to some embodiments of the present invention, the first infrared ray has wave crest, and the peak wavelength of wave crest is 735-750
Nanometer.
According to some embodiments of the present invention, it is 90-110 nanometers that peak wavelength, which has halfwidth,.
According to some embodiments of the present invention, light source includes LED Chips for Communication.
According to various embodiments of the present invention, a kind of infrared light emission device is provided, is converted comprising light source, first wave length
Material and infrared emission are fluorinated matter fluorescent powder.Light source is configured to issue the first light.First wave length transition material is by the first light
Line excites and issues the second light, wherein it is 400-700 nanometers that the second light, which has wavelength,.Infrared emission is fluorinated matter fluorescent powder
Include Cr3+Active centre, wherein infrared emission fluorination matter fluorescent powder is excited by the second light and issues the first infrared ray, and first
Infrared ray has radioactive wave 650-1000 nanometers a length of.
According to some embodiments of the present invention, infrared light emission device further includes second wave length transition material, by
One light or the second light excite and issue the second infrared ray, and the first infrared ray has the first peak wavelength, the second infrared ray tool
There is the second peak wavelength, wherein the first peak wavelength is different from the second peak wavelength.
According to some embodiments of the present invention, first wave length transition material includes fluorescent powder, quantum dot or combinations thereof.
According to some embodiments of the present invention, light source includes a LED Chips for Communication.
The present invention provides a kind of novel infrared emission fluorination matter fluorescent powder and include this infrared emission fluoride
The infrared light emission device of fluorescent powder.Compared with the prior art, the advantages of the present invention are as follows: infrared emission fluorination of the invention
Matter fluorescent powder includes Cr3+Active centre, preparation method is simple and can synthesize at room temperature；Infrared emission fluorination of the invention
Matter fluorescent powder has wide emission wavelength, and the infrared light emission device comprising this infrared emission fluorination matter fluorescent powder can take
It for existing infrared light emission device, is widely used in various fields, such as food detection device, cancer detection device
Deng；In addition, infrared light emission device of the invention can also arrange in pairs or groups, other infrared fluorescence powder and/or light-emitting diode make together
With for example, collocation can allow other infrared fluorescence powder to extend the radiation wave-length coverage of infrared light emission device, or collocation
Green luminescence diode is for detecting heartbeat.
Detailed description of the invention
When reading annexed drawings, the various aspects of this exposure can be fully understood from narration in detailed below.It is noticeable
It is that, according to industrial standard practice, various features are not drawn to scale.In fact, in order to clearly discuss, various features
Size can arbitrarily increase or decrease.
Fig. 1 is the X-ray powder diffraction (XRD) that matter fluorescent powder is fluorinated according to the infrared emission of certain embodiments of the present invention
Map；
Fig. 2 is the fluorescence emission spectra figure that matter fluorescent powder is fluorinated according to the infrared emission of certain embodiments of the present invention；
Fig. 3-Figure 17 is the diagrammatic cross-section for the infrared light emission device being painted according to the various embodiments of the present invention；
Wherein, symbol description:
102 LED Chips for Communication 102a first electrodes
104 routing of 102b second electrode
110 pedestal of 102S light-emitting surface
120 pedestal, 121 crystal bonding area
122 wall of cup, 123 accommodating space
124,224 wavelength conversion layer 124A first wave length conversion layer
126 reflecting wall of 124B second wave length conversion layer
The top surface 126S 128,228 structural details
130 optical layer of the accommodating area 128a, 228a
136 conduct piece, 137 transparent colloid
226 encapsulating material, 227 infrared emission is fluorinated matter fluorescent powder
300、400、500、600、700、800、900、1000、1100、1200、1300、1400、1500、1600、1700
Infrared light emission device.
Specific embodiment
Multiple embodiments of the invention will be disclosed with schema below, as clearly stated, the details in many practices
It will be explained in the following description.It should be appreciated, however, that the details in these practices is not applied to limit the present invention.Also
It is to say, in some embodiments of the present invention, the details in these practices is non-essential.And illustrate for clarity, element
Size or thickness may exaggerate display, and map not according to full size.In addition, for the sake of to simplify the illustration, it is some known usual
Structure and element will be painted it in a manner of simply illustrating in the example shown.
Space relative terms used herein, for example, " lower section ", " under ", " top ", " on " etc., this is in order to just
Relativeness between one elements or features of narration and another elements or features, as depicted in figure.These phases spatially
True meaning to term includes other orientation.For example, when diagram spins upside down 180 degree, an element and another element it
Between relationship, may from " lower section ", " under " become " top ", " on ".In addition, spatially opposite used herein
Narration also should be explained similarly.
An aspect of the invention provides a kind of infrared emission fluorination matter fluorescent powder.In various embodiments, infrared ray
Radiofluorination matter fluorescent powder may include Cr3+Active centre.In some embodiments, infrared emission fluorination matter fluorescent powder is
Selected from least one of group as composed by following (A), (B): (A) A3B1-xF6:xCr3+, wherein A include Li, Na, K,
Rb、Cs、NH4Or combinations thereof, B includes Al, Ga or combinations thereof, and 0 < x≤1；(B)A3B1-y-zF6:yCr3+,zNi2+, wherein A packet
Containing Li, Na, K, Rb, Cs, NH4Or combinations thereof, B includes Al, Ga or combinations thereof, 0 < y < 1,0 < z < 1 and 0 < y+z≤1.
General formula is A3B1-xF6:xCr3+Infrared emission fluorination matter fluorescent powder have single active centre Cr3+, such as can
To include Li3Al1-xF6:xCr3+、Li3Ga1-xF6:xCr3+、Na3Al1-xF6:xCr3+、Na3Ga1-xF6:xCr3+、K3Al1-xF6:xCr3 +、K3Ga1-xF6:xCr3+、Rb3Al1-xF6:xCr3+、
Rb3Ga1-xF6:xCr3+、Cs3Al1-xF6:xCr3+、Cs3Ga1-xF6:xCr3+、(NH4)3Al1-xF6:xCr3+Or (NH4)3Ga1-xF6:xCr3+, wherein x can be 0.1,0.2,0.3,0.4,0.5,0.6,0.7,0.8 or 0.9.General formula is A3B1-y-zF6:
yCr3+,zNi2+Infrared emission fluorination matter fluorescent powder have bis-activated center Cr3+And Ni2+, such as may include Li3Al1-y- zF6:yCr3+,zNi2+、Li3Ga1-y-zF6:yCr3+,zNi2+、Na3Al1-y-zF6:yCr3+,zNi2+、Na3Ga1-y-zF6:yCr3+,zNi2 +、K3Al1-y-zF6:yCr3+,zNi2+、K3Ga1-y-zF6:yCr3+,zNi2+、Rb3Al1-y-zF6:yCr3+,zNi2+、Rb3Ga1-y-zF6:
yCr3+,zNi2+、Cs3Al1-y-zF6:yCr3+,zNi2+、Cs3Ga1-y-zF6:yCr3+,zNi2+、(NH4)3Al1-y-zF6:yCr3+,zNi2+
Or (NH4)3Ga1-y-zF6:yCr3+,zNi2+, wherein y can be that 0.1,0.2,0.3,0.4,0.5,0.6,0.7,0.8 or 0.9, z can
Think 0.1,0.2,0.3,0.4,0.5,0.6,0.7,0.8 or 0.9 and 0 < y+z≤1.Infrared emission with bis-activated center
Fluorination matter fluorescent powder is compared with the infrared emission fluorination matter fluorescent powder with single active centre, can have broader radiation
Wave-length coverage.In some embodiments, infrared emission fluorination matter fluorescent powder swashs via the light source that wavelength is 400-700 nanometers
After hair, a length of 650-1000 nanometers of the infrared ray of radioactive wave is radiated.In some embodiments, infrared emission fluoride is glimmering
The infrared ray that light powder radiates has wave crest, and the peak wavelength of wave crest is 735-750 nanometers.In some embodiments, on
It is 90-110 nanometers that peak wavelength, which is stated, with halfwidth.
According to an embodiment of the present invention, above-mentioned infrared emission fluorination matter fluorescent powder K is provided3GaF6:Cr3+Preparation side
Method.Firstly, the host lattice predecessor K of synthesis infrared emission fluorination matter fluorescent powder3GaF6.By 0.4000 gram of Ga (NO3)3.8H2O and 4.5 milliliter of deionized water is added in 50 milliliters of plastic cement centrifuge tubes, stirs 10 minutes at room temperature.It is added later
2.3247 grams of KF are persistently stirred 30 minutes, are centrifuged after standing 24 hours.Again with deionized water and alcohol washes sediment, merging is dried
Case is simultaneously dried 5 hours in 70 DEG C of atmosphere.
Then, the activator predecessor K of synthesis infrared emission fluorination matter fluorescent powder3CrF6.By 0.4000 gram of Cr
(NO3)3.9H2O and 4.5 milliliter of deionized water is added in 50 milliliters of plastic cement centrifuge tubes, stirs 10 minutes at room temperature.Later plus
Enter 4.0654 grams of KF persistently to stir 30 minutes, be centrifuged after standing 24 hours.Again with deionized water and alcohol washes sediment, merging
Baking oven is simultaneously dried 5 hours in 70 DEG C of atmosphere.
Later, by the host lattice predecessor K of 0.4000 gram of infrared emission fluorination matter fluorescent powder3GaF6With 0.0376 gram
The activator predecessor K of infrared emission fluorination matter fluorescent powder3CrF6It is placed in 15 milliliters of plastic cement centrifuge tubes, with test tube oscillator
Powder is uniformly mixed.Then, 1.0 milliliters of HF (48%) are added, make it in homogeneous solution with sonicator.Finally, will
Solution is placed in baking oven after moving into plastic box, is dried 24 hours with 70 DEG C, can obtain infrared emission fluorination matter fluorescent powder K3GaF6:
Cr3+。
Another embodiment according to the present invention provides above-mentioned infrared emission fluorination matter fluorescent powder K3AlF6:Cr3+Preparation
Method.Firstly, the host lattice predecessor K of synthesis infrared emission fluorination matter fluorescent powder3AlF6.By 0.3751 gram of Al (NO3)3.9H2O and 4.5 milliliter of deionized water is added in 50 milliliters of plastic cement centrifuge tubes, stirs 10 minutes at room temperature.It is added later
0.9877 gram of KF is persistently stirred 30 minutes, is centrifuged after standing 24 hours.Again with deionized water and alcohol washes sediment, merging is dried
Case is simultaneously dried 5 hours in 70 DEG C of atmosphere.
Then, the activator predecessor K of synthesis infrared emission fluorination matter fluorescent powder3CrF6.By 0.4000 gram of Cr
(NO3)3.9H2O and 4.5 milliliter of deionized water is added in 50 milliliters of plastic cement centrifuge tubes, stirs 10 minutes at room temperature.Later plus
Enter 4.0654 grams of KF persistently to stir 30 minutes, be centrifuged after standing 24 hours.Again with deionized water and alcohol washes sediment, merging
Baking oven is simultaneously dried 5 hours in 70 DEG C of atmosphere.
Later, by the host lattice predecessor K of 0.5000 gram of infrared emission fluorination matter fluorescent powder3AlF6With 0.0548 gram
The activator predecessor K of infrared emission fluorination matter fluorescent powder3CrF6It is placed in 15 milliliters of plastic cement centrifuge tubes, with test tube oscillator
Powder is uniformly mixed.Then, 1.0 milliliters of HF (48%) are added, make it in homogeneous solution with sonicator.Finally, will
Solution is placed in baking oven after moving into plastic box, is dried 24 hours with 70 DEG C, can obtain infrared emission fluorination matter fluorescent powder K3AlF6:
Cr3+。
Fig. 1 is that the infrared emission prepared according to above embodiment is fluorinated matter fluorescent powder K3GaF6:Cr3+And K3AlF6:
Cr3+X-ray powder diffraction (XRD) map.As shown in Figure 1, infrared emission of the invention is fluorinated matter fluorescent powder K3GaF6:Cr3+
And K3AlF6:Cr3+It is respectively the K of cube (cubic) with known structure3GaF6And K3AlF6 +Standard JCPDS map compare,
It can be found that the crest location of all infrared emission fluorination matter fluorescent powders is all consistent with standard JCPDS map, infrared ray is indicated
Radiofluorination matter fluorescent powder K3GaF6:Cr3+And K3AlF6:Cr3+It is all cube.
Fig. 2 is the fluorescence emission spectra figure that matter fluorescent powder is fluorinated according to the infrared emission of certain embodiments of the present invention,
Matter fluorescent powder is fluorinated using the light source activation infrared emission that wavelength is 450nm.As shown in Fig. 2, K3GaF6:Cr3+Wave crest position
It sets about in 740nm, halfwidth is about 106nm.K3AlF6:Cr3+Crest location about in 745nm, halfwidth is about 100nm.
Another aspect of the invention provides a kind of infrared light emission device.Fig. 3-Figure 17 is according to the various implementations of the present invention
The diagrammatic cross-section for the infrared light emission device that mode is painted.In various embodiments, infrared light emission device includes light source
And infrared emission above-mentioned is fluorinated matter fluorescent powder.In some embodiments, light source includes LED Chips for Communication.Certain
In embodiment, the installation kenel of LED Chips for Communication can be crystal covering type (flip chip) installation or face-up (face-up)
Installation.In certain embodiments, infrared emission, which is fluorinated matter fluorescent powder, directly can contact or keep a distance with light source.
In certain embodiments, infrared emission fluorination matter fluorescent powder is a membrane structure, can contact light source surface or is located at light source
Top.In certain embodiments, infrared emission fluorination matter fluorescent powder intersperse among in an encapsulating material, and encapsulating material around
Light source.In the following description, it will illustrate various forms of infrared light emission devices, and the material of infrared emission fluorination matter fluorescent powder
Material as described above, will not be described in great detail below.
Please refer to Fig. 3.Infrared light emission device 300 includes LED Chips for Communication 102 and first wave length conversion layer 124,
Wherein first wave length conversion layer 124 can be membrane structure, and include infrared emission fluorination matter fluorescent powder.In certain embodiments
In, LED Chips for Communication 102 can be two pole of blue light emitting coated diode chip, red light-emitting coated diode chip or green luminescence
Body chip, but not limited to this.LED Chips for Communication 102 can be configured to issue the first light, and the first light has wavelength
It is 400-700 nanometers.Infrared emission fluorination matter fluorescent powder is excited by the first light and issues the first infrared ray, has radiation
Wavelength is 650-1000 nanometers.In some embodiments, it is 735-750 nanometers of wave that the first infrared ray, which has peak wavelength,
Peak.In some embodiments, it is 90-110 nanometers that above-mentioned peak wavelength, which has halfwidth,.
In some embodiments, wavelength conversion layer 124 further includes encapsulating material, and infrared emission is fluorinated matter fluorescent powder
It may be interspersed in encapsulating material.Encapsulating material can be for example light-transmitting substrate, and infrared emission fluorination matter fluorescent powder intersperses among
In light substrate.In certain embodiments, light-transmitting substrate includes transparent colloid, such as epoxy resin (epoxy), silica gel
(silicone), ethylene terephthalate (polyethyleneterephthalate, PET), polyethylene
(polypropylene, PP), polystyrene (polystyrene, PS), nylon (polyamide, PA), polycarbonate
(polycarbonate, PC), polyimide (polyimide, PI), polymethyl methacrylate (polymethyl
Methacrylate, PMMA), dimethyl silicone polymer (polydimethylsiloxane, PDMS) or combinations thereof.In other realities
It applies in example, light-transmitting substrate includes glass material, ceramic material, but not limited to this, and infrared emission fluorination matter fluorescent powder can be with
Glass material or ceramic material mixing manufacture are at glass fluorescent powder film or ceramic fluorescent powder film.
As shown in figure 3, infrared light emission device 300 further includes pedestal 110 and reflecting wall 126.Pedestal 110 has pedestal
120 and wall of cup 122, wherein pedestal 120 contains crystal bonding area 121, and wall of cup 122 be located on pedestal 120 surround crystal bonding area 121 and
Define accommodating space 123.LED Chips for Communication 102 configures in accommodating space 123, and can fix through adhesion glue
On the crystal bonding area of pedestal 120 121.Wavelength conversion layer 124 is located at 102 top of LED Chips for Communication.In more detail, wavelength
The top that conversion layer 124 is located at accommodating space 123 corresponds to the light-emitting surface 102s of LED Chips for Communication 102.In certain embodiment party
In formula, wavelength conversion layer 124 can position on the top surface of wall of cup 122.Reflecting wall 126 can be arranged around wavelength conversion layer 124
Lateral wall on, and position is on the top surface of wall of cup 122.In some embodiments, reflecting wall 126 is with light reflectance properties
And the material of low drain light, such as reflexive glass, quartz, high molecule plastic, light reflection patch or other suitable materials.High score
Sub- plastics can for polystyrene (polystyrene, PS), polyethylene (polypropylene, PP), nylon (polyamide,
PA), polycarbonate (polycarbonate, PC), polymethyl methacrylate (polymethyl methacrylate,
PMMA), ethylene terephthalate (polyethylene terephthalate, PET), epoxy resin (epoxy), silica gel
(silicone) or combinations thereof.The luminous reflectanc of reflecting wall 126 can change by other particle filled composites are added.Certain
In embodiment, particle filled composite can be the composite material with different-grain diameter or unlike material.In certain embodiments, it fills
The material of particle can be silica (SiO2), titanium dioxide (TiO2), aluminum oxide (Al2O3), boron nitride (BN) or oxygen
Change zinc (ZnO), but not limited to this.This concept can be applied to other embodiments, and will not be repeated again explanation later.
It will be understood that the element material described will not be repeated again and repeat, conjunction is first chatted bright.In the following description, it will say
The infrared light emission device of bright other forms.
Please refer to Fig. 4.Infrared light emission device 400 and the difference of infrared light emission device 300 shown in Fig. 3 are, red
Outside line light emitting device 400 further includes structural detail 128.Structural detail 128 can support, encapsulate or protect wavelength conversion layer
124.As shown in figure 4, there is structural detail 128 accommodating area 128a can accommodate wavelength conversion layer 124, make wavelength conversion layer 124
The upper surface and the lower surface covered by structural detail 128.Structural detail 128 is located on the top surface of wall of cup 122, supports wavelength whereby
The top that conversion layer 124 is located at accommodating space 123 corresponds to the light-emitting surface 102s of LED Chips for Communication 102.In certain embodiment party
In formula, structural detail 128 is preferably formed with transparent material or light-permeable material, to avoid the light out for stopping wavelength conversion layer 124.
In other embodiments, structural detail 128 can also have encapsulating material property.For example, structural detail 128 may include stone
The material of English, glass or high molecule plastic.Structural detail 128 can protect wavelength conversion layer 124, obstruct the meeting such as aqueous vapor or oxygen
The external substance that 124 property of wavelength conversion layer is adversely affected.In some embodiments, structural detail 128 can be resistance
Hinder film (barrier film) and/or titanium silicon oxide, is set to 124 surface of wavelength conversion layer to obstruct aqueous vapor or oxygen etc.
External substance.In some instances, titanium silicon oxide can be glass material such as SiTiO4, with light peneration with it is anti-oxidant
Property, it can be coated with or pad pasting mode is set to 124 surface of wavelength conversion layer.In some instances, the material of barrier film may include
Inorganic material, such as metal oxide (such as SiO2、Al2O3Deng) or metal nitride (such as Si3N3Deng), and can be multilayer barrier
Film by be coated with or pad pasting in a manner of be set to 124 surface of wavelength conversion layer.This concept can be applied to other embodiments, and later not
Repeat explanation.Reflecting wall 126 can be arranged around on the lateral wall of structural detail 128, and position is on the top surface of wall of cup 122.
Please refer to Fig. 5.Infrared light emission device 500 and the difference of infrared light emission device 400 shown in Fig. 4 are, red
Outside line light emitting device 500 further includes the configuration of optical layer 130 on reflecting wall 126 and structural detail 128.Optical layer 130 can be adjusted
Whole light goes out light path.In some embodiments, optical layer 130 can be the transparent colloid containing diffusion particle, such as polyphenyl
Ethylene (polystyrene, PS), polyethylene (polypropylene, PP), polycarbonate (polycarbonate, PC), nylon
(polyamide, PA), polymethyl methacrylate (polymethyl methacrylate, PMMA), ethylene terephthalate
Ester (polyethylene terephthalate, PET), polyimide (polyimide, PI), dimethyl silicone polymer
(polydimethylsiloxane, PDMS), epoxy resin (epoxy), silica gel (silicone) or combinations thereof.In certain implementations
In example, diffusion particle may include SiO2、TiO2、Al2O3, BN or ZnO, but not limited to this.In certain embodiments, grain is spread
Son can have identical or different partial size.This concept can also be applied to other embodiments, be not repeated to illustrate later.Citing comes
It says, it can be in infrared light emission device 300 (Fig. 3), infrared light emission device 600 (Fig. 6) and (figure of infrared light emission device 1000
Etc. 10) setting optical layer 130 with adjust light goes out light path on the wavelength conversion layer 124 in devices.
Please refer to Fig. 6.Infrared light emission device 600 and the difference of infrared light emission device 300 shown in Fig. 3 are, red
Outside line light emitting device 600 further includes structural detail 228.There is structural detail 228 accommodating area 228a can accommodate and support wavelength
Wavelength conversion layer 124 is arranged on wall of cup 122 in conversion layer 124.Structural detail 228 is preferably transparent material or light-permeable material
Matter, to avoid the light out for stopping wavelength conversion layer 124.In certain embodiments, structural detail 228 can be quartz, glass, height
Molecule plastics or other suitable materials.This concept can be applied to other embodiments, be not repeated to illustrate later.
In some embodiments, infrared emission fluorination matter fluorescent powder is excited by the first light and to issue first infrared
Line, the radioactive wave of the first infrared ray is 650-1000 nanometers a length of, and has the first peak wavelength, for example, 735-750 nanometers
Wave crest.In some embodiments, the wavelength conversion layer 124 in the infrared light emission device 300 of Fig. 3 is in addition to containing above-mentioned red
Outside line radiofluorination matter fluorescent powder, further includes one or more wavelength conversion material, such as fluorescent powder, quantum dot or combinations thereof.Together
Reason, this embodiment can be applicable on the wavelength conversion layer 124 of the infrared light emission device of the 4th~6 figure.In addition, above-mentioned fluorescence
Powder, quantum dot or combinations thereof can by the first light excite and issue the second light, and the second light include the second infrared ray and/
Or visible light, wherein this second infrared ray has one to be different from the first peak wavelength when the second light is the second infrared ray
Second peak wavelength, wherein this visible light has a radioactive wave 400-700 nanometers a length of when the second light is visible light, and
Infrared emission fluorination matter fluorescent powder can be issued a third infrared ray by excited by visible light, this third infrared ray has a radiation
Wavelength is 650-1000 nanometers.Fluorescent powder can be for example organic fluorescence materials or inorganic fluorescent material.The choosing of organic fluorescence materials system
Group composed by free following compounds, group include single molecule structure, multimolecular structure, oligomer (Oligomer) with
And polymer (Polymer), compound with naphthalene (Naphthalene) group compound, have anthracene
(anthracene) compound of group, the compound with luxuriant and rich with fragrance (phenanthrene) group, (perylene) group
Compound, the compound with benzimidazole (benzimidazole) group, with fluorenes (fluorine) group compound,
Compound with 9- fluorenes (9-fluorenone) group, has glutaryl at the compound with carbazole (carbazole) group
The compound of imines (glutarimide) group, with meta-terphenyl (1,3-diphenylbenzene) group compound,
Compound with BaP (benzopyrene) group, has pyridine at the compound with pyrene (pyrene) group
(pyridine) compound of group, the compound with thiophene (thiophene) group, have 2,3- dihydro -1H- benzo
The chemical combination of [de] isoquinolin -1,3- diketone (2,3-dihydro-1H-benzo [de] isoquinoline-1,3-dione) group
Object, compound with benzimidazole (benzimidazole) group and combinations thereof.Inorganic fluorescent material, such as thioaluminate phosphor
Powder (such as LuYAG, GaYAG, YAG, β-SiAlON), silicic acid matter fluorescent powder, nitride phosphor, sulphide fluorescent material, fluorination
Matter fluorescent powder etc..For example, red fluorescence powder is for example fluorinated fluorescent powder A2[MF6]:Mn4+, wherein A be selected from Li, Na, K,
Rb、Cs、NH4And combinations thereof the group that is constituted, M be the ethnic group constituted selected from Ge, Si, Sn, Ti, Zr and combinations thereof.Or
Person, red fluorescence powder may include (Sr, Ca) S:Eu, CaAlSiN3:Eu、(Sr,Ba)3SiO5:Eu、(Ca,Sr)2Si5N8:Eu、
SrLiAl3N4:Eu.Green fluorescent material such as β-SiAlON, LuAG.Yellow fluorescent material such as YAG:Ce and/or nitrogen oxidation
Object, silicate, nitride composition inorganic type yellow fluorescent powder and/or organic type yellow fluorescent powder.Quanta point material tool is general
Chemical formula such as CdSe/ZnS, CdSe/CdS, CsPb (Cl, Br)3、CsPb(Br,I)3、CsPbI3, InP etc..Other can radiate red
The wavelength conversion material of outside line, for example, PbS, PbSe quanta point material radiation wavelength up to 2000nm, contain Cr3+Active centre
The radiation wave-length coverage of nitride is about 700~1000nm, containing Cr3+The oxide of active centre is (for example, (Ca, Sr, Ba)
Ga12O19:Cr3+, (Ca, Sr, Ba)3Ga2Ge4O14:Cr3+, LaGaGe2O7:Cr3+, La3GaGe5O16:Cr3+) radiation wave-length coverage
It is about 800~1200nm.
By in wavelength conversion layer 124 comprising infrared emission fluorination matter fluorescent powder of the invention and other at least one
Kind can be with the wavelength conversion material of infra-red-emitting, such as nitride phosphor, oxide fluorescent powder, sulphide fluorescent material, silicon
Sour matter fluorescent powder or PbS, PbSe quanta point material etc. can make infrared light emission device 300 have broader infrared emission
Wave-length coverage.Whereby, when infrared ray light emitting device 300 is applied in detection device, measuring range can be increased, improve measurement surely
Qualitative and accuracy.
It is that the accommodating space 123 defined with wall of cup 122 separates light-emitting diodes in infrared light emission device 300~600
Body chip 102 and wavelength conversion layer 124, therefore can avoid shadow due to too close LED Chips for Communication 102 of wavelength conversion layer 124
Thermal stability and chemical stability are rung, and the service life of wavelength conversion layer 124 can be improved, and promote the trust of infrared light emission device
Property.Accommodating space 123 can be gap (empty space), or can also insert transparent encapsulation material (not being painted).In certain realities
It applies in example, transparent encapsulation material can be polystyrene (polystyrene, PS), polyethylene (polypropylene, PP), gather
Carbonic ester (polycarbonate, PC), polyimide (polyimide, PI), nylon (polyamide, PA), polymethyl
Sour methyl esters (polymethyl methacrylate, PMMA), ethylene terephthalate (polyethylene
Terephthalate, PET), dimethyl silicone polymer (polydimethylsiloxane, PDMS), epoxy resin (epoxy),
Silica gel (silicone) or combinations thereof.In some embodiments, transparent encapsulation material can adulterate one or more wavelength convert materials
Material, such as fluorescent powder, quantum dot or combinations thereof.In other embodiments, one or more wavelength conversion material can be coated on hair
On the light-emitting surface 102S of near-infrafed photodiodes chip 102.Therefore, in addition to wavelength conversion layer 124, the luminosity of infrared light emission device
The more permeable transparent encapsulation material containing wavelength conversion material and/or position containing on the surface of LED Chips for Communication 102
There is the coating of wavelength conversion material to be adjusted.Such as wavelength conversion layer 124 is fluorinated matter fluorescent powder containing infrared emission, it can
The first light is issued to be excited by the first light；The fluorescent powder that is separately mixed with transparent encapsulation material, quantum dot or combinations thereof or
The coating of fluorescent powder of the position on the surface of LED Chips for Communication 102, quantum dot or combinations thereof, can be excited by the first light
And the second light is issued, and the second light includes the second infrared ray and/or visible light, wherein when the second light is the second infrared ray
When, this second infrared ray has second peak wavelength for being different from the first peak wavelength, wherein when the second light is visible light
When, this visible light has a radioactive wave 400-700 nanometers a length of, and infrared emission fluorination matter fluorescent powder can be by excited by visible light
And a third infrared ray is issued, this third infrared ray has a radioactive wave 650-1000 nanometers a length of.Wavelength conversion layer 124, envelope
The type visible product essence demand appropriate adjustment of the wavelength conversion material of package material and/or coating changes.This concept can be applied
To other embodiments, and it is not repeated to illustrate later.
Please refer to Fig. 7.Infrared light emission device 700 and the difference of infrared light emission device 300 shown in Fig. 3 are, red
Outside line light emitting device 700 omits wavelength conversion layer 124 and reflecting wall 126 in Fig. 3, and there is wavelength conversion layer 224 to be filled in
In accommodating space 123.Wavelength conversion layer 224 can encircle and cover LED Chips for Communication 102, and can further be covered on pedestal
On 120.Wavelength conversion layer 224 includes that infrared emission above-mentioned is fluorinated matter fluorescent powder 227.LED Chips for Communication 102 can be with
Configuration is to issue the first light, and it is 400-700 nanometers that the first light, which has wavelength,.Infrared emission is fluorinated matter fluorescent powder 227
It is excited by the first light and issues the first infrared ray, it is 650-1000 nanometers a length of with radioactive wave.In some embodiments,
It is 735-750 nanometers of wave crest that first infrared ray, which has peak wavelength,.In some embodiments, above-mentioned peak wavelength has half
90-110 nanometers of Gao Kuanwei.In some embodiments, wavelength conversion layer 224 further includes encapsulating material 226 around luminous two
Polar body 102, and infrared emission fluorination matter fluorescent powder 227 intersperses among in encapsulating material 226.In certain embodiments, package material
Material can be transparent colloid, such as poly- polystyrene (polystyrene, PS), polyethylene (polypropylene, PP), nylon
(polyamide, PA), polycarbonate (polycarbonate, PC), polyimide (polyimide, PI), methyl methacrylate
Ester (polymethyl methacrylate, PMMA), ethylene terephthalate (polyethylene terephthalate,
PET), dimethyl silicone polymer (polydimethylsiloxane, PDMS), epoxy resin (epoxy), silica gel (silicone)
Or combinations thereof.
In some embodiments, wavelength conversion layer 224 further includes one or more wavelength conversion material, such as fluorescent powder,
Quantum dot or combinations thereof.In more detail, in some embodiments, infrared emission fluorination matter fluorescent powder and fluorescent powder, amount
Son point or combinations thereof can be mixed in encapsulating material (for example, transparent colloid) 226.Above-mentioned fluorescent powder, quantum dot or combinations thereof
It can be excited by the first light and issue the second light, and the second light includes the second infrared ray and/or visible light.In certain realities
Apply in example, the first infrared ray have the first peak wavelength, the second infrared ray have the second peak wavelength, and the first peak wavelength with
Second peak wavelength is different.Matter fluorescent powder, Yi Jizhi are fluorinated comprising infrared emission of the invention by wavelength conversion layer 224
Few one kind can be with the wavelength conversion material of infra-red-emitting, such as above-mentioned contains Cr3+Oxide fluorescent powder, contain Cr3+Nitridation
Matter fluorescent powder, silicic acid matter fluorescent powder, sulphide fluorescent material or PbS, PbSe quanta point material etc., can make infrared light emission device
1400 have broader infrared emission wave-length coverage.In other embodiments, it is seen that there is light a length of 400-700 of radioactive wave to receive
Rice, and the fluorination matter fluorescent powder penetrated outside above-mentioned infrared ray can issue third infrared ray by this excited by visible light, and third is red
Outside line has radioactive wave 650-1000 nanometers a length of.
Please refer to Fig. 8.Infrared light emission device 800 and the difference of infrared light emission device 700 shown in Fig. 7 are, red
Outside line light emitting device 800 further includes structural detail 228.Structural detail 228 is across wavelength conversion layer 224 and configures in wall of cup 122
On, it can protect the infrared emission in wavelength conversion layer 224 and be fluorinated matter fluorescent powder and other wavelength conversion material not by the external world
The damage of substance such as aqueous vapor or oxygen influences.In some embodiments, structural detail 228 can be barrier film (barrier
Film) and/or titanium silicon oxide, 224 surface of wavelength conversion layer is set to obstruct the external substances such as aqueous vapor or oxygen.At certain
In a little embodiments, titanium silicon oxide can be glass material such as SiTiO4, but not limited to this, with light peneration with it is anti-oxidant
Property, it can be coated with or pad pasting mode is set to 224 surface of wavelength conversion layer.In certain embodiments, the material of barrier film can wrap
Include inorganic material, such as metal oxide (such as SiO2、Al2O3Deng) or metal nitride (such as Si3N3Deng), and can be multilayer
Barrier film by be coated with or pad pasting in a manner of be set to 224 surface of wavelength conversion layer.
With reference to Fig. 9.Infrared light emission device 900 includes pedestal 120, LED Chips for Communication 102, wavelength conversion layer 124
With reflecting wall 126.Each element in infrared light emission device 900 can with there is identical number in aforementioned infrared light emission device
Element it is identical, therefore only illustrate the connection relationship between element herein.LED Chips for Communication 102 configures consolidating in pedestal 120
On crystalline region.Wavelength conversion layer 124 configures on the light-emitting surface of LED Chips for Communication 102.Reflecting wall 126 is configured in wavelength convert
On the side wall of layer 124.In some embodiments, LED Chips for Communication 102 can pass through routing 104 and be electrically connected pedestal 120,
Wherein routing 104 passes through the opening (not being painted) of wavelength conversion layer 124.
Please refer to Figure 10.Infrared light emission device 1000 and the difference of infrared light emission device 900 shown in Fig. 9 is,
Infrared light emission device 1000 further includes the configuration of optical layer 130 on wavelength conversion layer 124 and reflecting wall 126.In certain implementations
In mode, LED Chips for Communication 102 can pass through routing 104 and be electrically connected pedestal 120, and wherein routing 104 passes through wavelength convert
The opening (not being painted) of layer 124 and optical layer 130.In certain embodiments, routing 104 can be pierced by the upper surface of optical layer 130
Or side surface.
Please refer to Figure 11.Infrared light emission device 1100 includes LED Chips for Communication 102, wavelength conversion layer 124 and anti-
Penetrate wall 126.Each element in infrared light emission device 1100 can in aforementioned infrared light emission device with identical number
Element is identical, therefore only illustrates the connection relationship between element herein.As shown in figure 11, reflecting wall 126 is brilliant around light-emitting diode
The side wall of piece 102 forms clearance space 123.The height of reflecting wall 126 can be higher than LED Chips for Communication 102.Wavelength convert
Layer 124 is arranged on the top surface 126s of reflecting wall 126, and keeps certain by clearance space 123 and LED Chips for Communication 102
Distance.It can thus be avoided wavelength conversion layer 124 influences its thermal stability and change because of too close LED Chips for Communication 102
Stability is learned, and then improves the service life of wavelength conversion layer 124, and promote the reliability of infrared light emission device product, this concept
It will not be repeated again explanation.
Please refer to Figure 12.The difference of infrared light emission device 1100 shown in infrared light emission device 1200 and Figure 11 exists
In the wavelength conversion layer 124 of infrared light emission device 1200 is arranged on the inner sidewall of reflecting wall 126, and is located at reflecting wall 126
Between.
Please refer to Figure 13.The difference of infrared light emission device 1100 shown in infrared light emission device 1300 and Figure 11 exists
In infrared light emission device 1300 further includes structural detail 128, and the setting of wavelength conversion layer 124 is defined in structural detail 128
Accommodating area 128a in.Structural detail 128 can support, encapsulate or protect wavelength conversion layer 124.Structural detail 128 coats wave
Long conversion layer 124, and be arranged on the top surface 126s of reflecting wall 126, by clearance space 123 and LED Chips for Communication
102 separate.Structural detail 128 can be identical as the structural detail 128 in infrared light emission device 400,500, therefore herein no longer
It repeats.In one embodiment, clearance space 123 can be the gap (empty space) that do not filled by other materials.Another
In embodiment, clearance space 123 can fill transparent material or light-permeable material, to avoid going out for wavelength conversion layer 124 is stopped
Light, such as glass, quartz, high molecule plastic or other suitable materials.
Please refer to Figure 14.Infrared light emission device 1400 includes that LED Chips for Communication 102, reflecting wall 126 and wavelength turn
Change layer 124.As shown in figure 14, reflecting wall 126 is arranged on the side surface of LED Chips for Communication 102.In certain embodiments
In, LED Chips for Communication 102 is in a manner of flip by its first electrode 102a and second electrode 102b and pedestal or circuit
Plate (not being painted) is electrically connected.In some embodiments, LED Chips for Communication 102 is blue light emitting coated diode chip or hair
The LED Chips for Communication of other coloured light out.The configuration of wavelength conversion layer 124 (goes out in the upper surface of LED Chips for Communication 102
Smooth surface) on.The wavelength conversion layer 124 of infrared light emission device 1400 may include first wave length conversion layer 124A of different nature
With second wave length conversion layer 124B.Second wave length conversion layer 124B is located at first wave length conversion layer 124A and LED Chips for Communication
Between 102.In some embodiments, first wave length conversion layer 124A includes that present invention infrared emission fluoride above-mentioned is glimmering
Light powder, second wave length conversion layer 124B include other wavelength conversion material, such as fluorescent powder, the quantum dot or combinations thereof.
In some embodiments, the wavelength conversion material in second wave length conversion layer 124B is by LED Chips for Communication
102 the first light issued excite and issue the second light that wavelength is 400-700 nanometers, later, first wave length conversion layer
Infrared emission fluorination matter fluorescent powder in 124A is issued first that wavelength is 650-1000 nanometers by the excitation of this second light
Infrared ray.It in other embodiments, can also include other wavelength conversion material, and this wave in first wave length conversion layer 124A
Long transition material is excited by the first light or the second light and issues the second infrared ray.In certain embodiments, the first infrared ray
With the first peak wavelength, the second infrared ray has the second peak wavelength, and the first peak wavelength is different from the second peak wavelength.
It can be put by first wave length conversion layer 124A comprising infrared emission fluorination matter fluorescent powder of the invention and at least one
Penetrate the wavelength conversion material of infrared ray, such as oxide fluorescent powder, nitride phosphor, sulphide fluorescent material, silicic acid object fluorescence
Powder or PbS, PbSe quanta point material etc. can make infrared light emission device 1400 have broader infrared emission wavelength model
It encloses.
Please refer to Figure 15.Infrared light emission device 1500 includes pedestal 120, LED Chips for Communication 102, wavelength conversion layer
224 with reflecting wall 126.Each element in infrared light emission device 1500 can be identical as having in aforementioned infrared light emission device
The element of number is identical, therefore only illustrates the connection relationship between element herein.Reflecting wall 126 is arranged on pedestal 120 and defines
Accommodating space 123 out.In some embodiments, wavelength conversion layer 224 includes that infrared emission above-mentioned is fluorinated matter fluorescent powder.
In other embodiments, wavelength conversion layer 224 further includes other wavelength conversion material, such as fluorescent powder, quantum dot or its group
It closes.LED Chips for Communication 102 configures in accommodating space 123, and the conduction on pedestal 120 is electrically connected in a manner of flip
Part 136.Wavelength conversion layer 224 is filled in accommodating space 123, and is contacted with LED Chips for Communication 102.
Please refer to Figure 16.The difference of infrared light emission device 1600 and infrared light emission device 1500 shown in figure 15 exists
In infrared light emission device 1600 further includes the configuration of structural detail 228 on wavelength conversion layer 224 and reflecting wall 126.Structural elements
Part 228 can encapsulate and protect wavelength conversion layer 224, to avoid wavelength conversion layer 224 by external substance such as aqueous vapor or oxygen
The influence of gas and damage.In some embodiments, structural detail 228 can be with the structure of above-mentioned infrared light emission device 600
Element 228 is identical, and so it will not be repeated.
Please refer to Figure 17.Infrared light emission device 1700 includes pedestal 120, LED Chips for Communication 102, wavelength conversion layer
124 with transparent colloid 137.In some embodiments, each element in infrared light emission device 1700 can with it is aforementioned infrared
Element in line light emitting device 1400 with identical number is identical, therefore only illustrates the connection relationship between element herein.Luminous two
Polar body chip 102 is electrically connected pedestal 120 in a manner of flip.Wavelength conversion layer 124 is configured in LED Chips for Communication 102
On upper surface and side surface, and it may extend on the upper surface of pedestal 120.Wavelength conversion layer 124 includes first wave length conversion layer
124A and second wave length conversion layer 124B are between first wave length conversion layer 124A and LED Chips for Communication 102.Certain
In embodiment, first wave length conversion layer 124A includes that above-mentioned infrared emission is fluorinated matter fluorescent powder, second wave length conversion layer
124B includes fluorescent powder, quantum dot or combinations thereof.Transparent colloid 137 can be used as encapsulating material, cover wavelength conversion layer 124 and bottom
Seat 120.
As described above, embodiment according to the present invention, provide a kind of novel infrared emission fluorination matter fluorescent powder and
Infrared light emission device comprising this infrared emission fluorination matter fluorescent powder.Infrared emission of the invention is fluorinated matter fluorescent powder packet
Containing Cr3+Active centre, preparation method is simple and can synthesize at room temperature.Infrared emission fluorination matter fluorescent powder tool of the invention
There is wide emission wavelength, the infrared light emission device comprising this infrared emission fluorination matter fluorescent powder can replace existing red
Outside line light emitting device is widely used in various fields, such as food detection device, cancer detection device etc..In addition, this hair
Bright infrared light emission device can also arrange in pairs or groups other infrared fluorescence powder and/or light-emitting diode uses together, for example, collocation
Other infrared fluorescence powder be can allow to extend the radiation wave-length coverage of infrared light emission device, or collocation two pole of green luminescence
Body is for detecting heartbeat etc..
Although the present invention is disclosed above with embodiment, however, it is not to limit the invention, any to be familiar with this skill
Person, without departing from the spirit and scope of the present invention, when can be used for a variety of modifications and variations, therefore protection scope of the present invention is worked as
Subject to appended claims institute defender.
Claims (20)
1. a kind of infrared emission is fluorinated matter fluorescent powder, which is characterized in that include Cr3+Active centre.
2. infrared emission as described in claim 1 is fluorinated matter fluorescent powder, which is characterized in that the infrared emission fluoride is glimmering
Light powder is selected from least one of group as composed by following (A), (B):
(A)A3B1-xF6:xCr3+, wherein A includes Li, Na, K, Rb, Cs, NH4Or combinations thereof, B includes Al, Ga or combinations thereof, and 0
<x≦1；And
(B)A3B1-y-zF6:yCr3+,zNi2+, wherein A includes Li, Na, K, Rb, Cs, NH4Or combinations thereof, B include Al, Ga or its
Combination, 0 < y < 1,0 < z < 1 and 0 < y+z≤1.
3. infrared emission as described in claim 1 is fluorinated matter fluorescent powder, which is characterized in that the infrared emission fluoride is glimmering
After the light source activation that light powder is 400-700 nanometers via wavelength, infrared ray is radiated, and the infrared ray has radioactive wave a length of
650-1000 nanometers.
4. infrared emission as claimed in claim 3 is fluorinated matter fluorescent powder, which is characterized in that the infrared ray has a wave crest,
And the peak wavelength of the wave crest is 735-750 nanometers.
5. infrared emission as claimed in claim 4 is fluorinated matter fluorescent powder, which is characterized in that the peak wavelength has halfwidth
It is 90-110 nanometers.
6. a kind of infrared light emission device, characterized by comprising:
Light source is configured to issue the first light, and it is 400-700 nanometers that wherein first light, which has wavelength,；And
Infrared emission is fluorinated matter fluorescent powder, includes Cr3+Active centre, wherein infrared emission fluorination matter fluorescent powder by this
One light excites and issues the first infrared ray, which has radioactive wave 650-1000 nanometers a length of.
7. infrared light emission device as claimed in claim 6, which is characterized in that infrared emission fluorination matter fluorescent powder is choosing
At least one of (A) below freely, group composed by (B):
(A)A3B1-xF6:xCr3+, wherein A includes Li, Na, K, Rb, Cs, NH4Or combinations thereof, B includes Al, Ga or combinations thereof, and 0
<x≦1；And
(B)A3B1-y-zF6:yCr3+,zNi2+, wherein A includes Li, Na, K, Rb, Cs, NH4Or combinations thereof, B include Al, Ga or its
Combination, 0 < y < 1,0 < z < 1 and 0 < y+z≤1.
8. infrared light emission device as claimed in claim 6, which is characterized in that the infrared emission is fluorinated matter fluorescent powder and spreads
In encapsulating material, and the encapsulating material is around the light source.
9. infrared light emission device as claimed in claim 6, which is characterized in that further include first wave length conversion layer, described
One wavelength conversion layer contacts the light source surface or is located above the light source, and wherein the first wave length conversion layer includes that the infrared ray is put
Penetrate fluorination matter fluorescent powder.
10. infrared light emission device as claimed in claim 6, which is characterized in that further include fluorescent powder, quantum dot or its group
It closes, the fluorescent powder, quantum dot or combinations thereof are excited by first light and issue the second light, and wherein second light includes
Second infrared ray and/or visible light, wherein first infrared ray has the first peak wavelength, which has the second peak
It is worth wavelength, first peak wavelength is different from second peak wavelength, and wherein there is the visible light a length of 400-700 of radioactive wave to receive
Rice, and the fluorination matter fluorescent powder penetrated issues third infrared ray by the excited by visible light outside infrared ray, wherein the third infrared ray
It is 650-1000 nanometers a length of with radioactive wave.
11. infrared light emission device as claimed in claim 10, which is characterized in that it is mixed that the infrared emission is fluorinated matter fluorescent powder
The fluorescent powder, the quantum dot or combinations thereof are closed in an encapsulating material, and the encapsulating material is around the light source.
12. infrared light emission device as claimed in claim 10, which is characterized in that first wave length conversion layer is further included, it is described
First wave length conversion layer contacts the light source surface or is located above the light source, and wherein the first wave length conversion layer includes:
The infrared emission is fluorinated matter fluorescent powder；And
The fluorescent powder, quantum dot or combinations thereof.
13. infrared light emission device as claimed in claim 10, which is characterized in that further include first wave length conversion layer and second
Wavelength conversion layer, wherein the second wave length conversion layer is located between the first wave length conversion layer and the light source, which turns
Changing layer includes that the infrared emission is fluorinated matter fluorescent powder, which includes the fluorescent powder, the quantum dot or its group
It closes.
14. infrared light emission device as claimed in claim 6, which is characterized in that first infrared ray has a wave crest, and should
The peak wavelength of wave crest is 735-750 nanometers.
15. infrared light emission device as claimed in claim 14, which is characterized in that it is 90- that the peak wavelength, which has halfwidth,
110 nanometers.
16. infrared light emission device as claimed in claim 6, which is characterized in that the light source includes LED Chips for Communication.
17. a kind of infrared light emission device, characterized by comprising:
Light source is configured to issue the first light；
First wave length transition material is excited by first light and issues the second light, and wherein second light is with wavelength
400-700 nanometers；And
Infrared emission is fluorinated matter fluorescent powder, and it includes Cr3+Active centre, wherein the infrared emission is fluorinated matter fluorescent powder by this
Second light excites and issues the first infrared ray, which has radioactive wave 650-1000 nanometers a length of.
18. infrared light emission device as claimed in claim 17, which is characterized in that the infrared light emission device further includes second
Wavelength conversion material, the second wave length transition material is excited by first light or second light and sending second is infrared
Line, first infrared ray have the first peak wavelength, which has the second peak wavelength, wherein the first peak value wave
Length is different from second peak wavelength.
19. infrared light emission device as claimed in claim 17, which is characterized in that the first wave length transition material includes fluorescence
Powder, quantum dot or combinations thereof.
20. infrared light emission device as claimed in claim 17, which is characterized in that the light source includes LED Chips for Communication.
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| US16/261,533 US10808171B2 (en) | 2018-01-30 | 2019-01-29 | Infrared emitting fluoride phosphor and infrared light emitting device |
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| US201862623611P | 2018-01-30 | 2018-01-30 | |
| US62/623,611 | 2018-01-30 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110499157A (en) * | 2019-09-10 | 2019-11-26 | 云南民族大学 | A kind of light activated fluogermanate infrared lumious material for mixing Cr3+ of indigo plant |
| CN110499157B (en) * | 2019-09-10 | 2023-03-31 | 云南民族大学 | Blue light excited Cr3+ doped fluorogermanate infrared luminescent material |
| CN110511746A (en) * | 2019-09-11 | 2019-11-29 | 云南民族大学 | One kind mixing Cr3+Fluoride near-infrared light-emitting material and its synthetic method |
| CN110511746B (en) * | 2019-09-11 | 2023-05-19 | 云南民族大学 | Cr-doped steel 3+ Fluoride near infrared luminescent material and synthesis method thereof |
| CN114316975A (en) * | 2020-09-30 | 2022-04-12 | 隆达电子股份有限公司 | Phosphate phosphor, light emitting device and detecting device |
| CN114316975B (en) * | 2020-09-30 | 2023-09-08 | 隆达电子股份有限公司 | Phosphate fluorescent powder, light-emitting device and detecting device |
| US11879084B2 (en) | 2020-09-30 | 2024-01-23 | Lextar Electronics Corporation | Phosphate phosphor, light emitting device, and detecting device |
| CN114106816A (en) * | 2021-12-20 | 2022-03-01 | 重庆盾银科技有限公司 | Tracking reagent and preparation method thereof |
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Application publication date: 20190806 |