CN111162151A - LED chip packaging method and LED lamp bead - Google Patents
LED chip packaging method and LED lamp bead Download PDFInfo
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- CN111162151A CN111162151A CN201811321006.3A CN201811321006A CN111162151A CN 111162151 A CN111162151 A CN 111162151A CN 201811321006 A CN201811321006 A CN 201811321006A CN 111162151 A CN111162151 A CN 111162151A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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Abstract
The invention provides an LED chip packaging method and an LED lamp bead, wherein in the LED lamp bead prepared by the method, the upper surface of the LED chip, which is used for emitting light, is sequentially provided with a first luminescence conversion glue layer and a second luminescence conversion glue layer which are single-medium luminescence conversion glue layers, so that the light emitted from the LED chip can be sequentially and uniformly converted in the two layers of light-emitting conversion adhesive layers, the light emitted by the LED lamp beads is more uniform, the occurrence of the conditions of chromatic aberration, yellow spots and the like can be reduced, the light efficiency is improved, in addition, the side surfaces of the LED chip in the LED lamp bead prepared by the method, the side surfaces of the first luminescence conversion adhesive layer and the second luminescence conversion adhesive layer are provided with light blocking adhesive layers, and this glue film that is in the light can block the light that the LED chip sent to can reduce the angle of giving out light, make LED lamp pearl use under more fields.
Description
Technical Field
The invention relates to the field of Light Emitting Diodes (LEDs), in particular to an LED chip packaging method and an LED lamp bead.
Background
With the application and development of LEDs, the size requirements of LEDs are getting smaller and smaller. In order to meet the requirement of reducing the size of the LED, Chip Scale Package (CSP) LEDs have appeared, and the current CSP LEDs mainly have two structures: one is a five-side light-emitting CSP LED, four side faces and the top face of the CSP LED are light-emitting faces, and the bottom of the CSP LED is provided with a positive electrode and a negative electrode. The other is a single-side light-emitting CSP LED, only the top surface of the CSP LED is used as a light-emitting surface, and the bottom surface of the CSP LED is provided with a positive electrode and a negative electrode.
Fig. 1 shows a five-surface light-emitting CSP LED lamp bead 1 which is most common at present. This CSP LED lamp pearl includes LED chip 11 in 1, is provided with chip electrode 12 in LED chip 11 bottom. Meanwhile, the CSP LED lamp bead 1 further comprises a fluorescent glue layer 13 pressed on the upper surface and the side surface of the LED chip 11 through a die pressing or film pasting process, wherein the fluorescent glue layer 13 is generally silica gel formed by uniformly mixing red and green fluorescent powder. Fig. 2 shows a single-side light-emitting CSP LED lamp bead 2 which is most common at present. This CSP LED lamp pearl includes LED chip 21 in 2, is provided with chip electrode 22 in LED chip 21 bottom. Meanwhile, the CSPLED lamp bead 2 further comprises a white wall adhesive layer 23 which coats the side face of the LED chip 21 and is used for blocking light emitted from the side face of the chip, the CSPLED lamp bead 2 further comprises a fluorescent adhesive layer 24 which is stuck on the upper surface of the chip and the upper surface of the white wall adhesive layer 23, wherein the fluorescent adhesive layer 24 is generally silica gel which is formed by uniformly mixing red fluorescent powder and green fluorescent powder.
Because all only one deck fluorescence glue film in above-mentioned two kinds of structures, and all be red in this fluorescence glue film, the silica gel that green phosphor powder mixes, so can have red phosphor powder and green phosphor powder simultaneously on the horizontal plane of the fluorescence glue film of the same distance of LED chip light-emitting upper surface, and red phosphor powder's excitation efficiency is less than green phosphor powder's excitation efficiency, so same horizontal plane in the fluorescence glue film just can't carry out even conversion to the light that the LED chip sent, it is unusual, the red phosphor powder of keeping away from LED chip upper surface also can't obtain fully arousing, it is inhomogeneous so to lead to the light that the LED product sent, CSP LED's whole light efficiency has been influenced seriously.
Disclosure of Invention
The embodiment of the invention provides an LED chip packaging method and an LED lamp bead, and mainly solves the technical problems that: how to solve among the prior art LED product because of set up the fluorescence glue film that has mixed the luminous conversion medium of multiple excitation efficiency inconsistent, lead to the problem that LED product luminous homogeneity is poor. In order to solve the above technical problem, an embodiment of the present invention provides an LED chip packaging method, including:
s3, arranging a first light-emitting conversion glue layer on the light-emitting upper surface of the LED chip to be packaged;
s6, arranging a second light-emitting conversion adhesive layer on the first light-emitting conversion adhesive layer; the first luminescence conversion glue layer and the second luminescence conversion glue layer are single-medium luminescence conversion layers;
s9, arranging a light blocking layer on the side face of the LED chip to be packaged, and enabling the upper surface of the light blocking layer not to be lower than the upper surface of the second light-emitting conversion adhesive layer;
and S12, curing the light blocking layer, the first light-emitting conversion adhesive layer and the second light-emitting conversion adhesive layer under a preset curing condition until the first light-emitting conversion adhesive layer, the second light-emitting conversion adhesive layer and the light blocking layer are completely combined and cured.
In an embodiment of the invention, the first luminescence conversion glue layer is a first fluorescent glue layer, and the process of arranging the first fluorescent glue layer is a spraying process; the second luminescence conversion glue layer is a second fluorescent glue layer, and the process for arranging the second fluorescent glue layer is a spraying process.
In an embodiment of the present invention, before S9, the method further includes:
s8, curing the first light-emitting conversion glue layer and the second light-emitting conversion glue layer to a semi-cured state under a preset first curing condition;
the S12 includes:
and S120, curing the light blocking layer and the first and second light-emitting conversion glue layers in a semi-cured state under a preset second curing condition until the first light-emitting conversion glue layer, the second light-emitting conversion glue layer and the light blocking layer are completely combined and cured.
In one embodiment of the present invention, the first curing conditions include: baking at 80 deg.C for 20-30 min; the second curing conditions include: baking the mixture for 150 to 200 minutes in an environment with the temperature of 150 ℃.
In an embodiment of the invention, the light blocking layer is a white wall glue layer, and the process of disposing the white wall glue layer is a dispensing process or a molding process.
In an embodiment of the present invention, before S3, the method further includes:
s501, arranging at least two to-be-packaged LED chips on a preparation carrier according to a preset spacing distance;
s502, placing a protection board provided with an opening on the LED chip to be packaged, wherein the size and the position of the opening correspond to those of the LED chip to be packaged, and the upper surface of the protection board is not lower than that of the LED chip to be packaged;
before S9, the method further includes:
s505, removing the protective plate placed on the LED chip to be packaged, and removing the light emitting conversion layer when the light emitting conversion layer exists above the non-opening area of the protective plate;
the S9 includes:
and S507, arranging a light blocking layer in the gap between the LED chips to be packaged.
In an embodiment of the present invention, after S12, the method further includes:
s509, cutting the light blocking layers among the LED chips;
and S510, removing the preparation carrier to obtain the wafer level packaging LED lamp bead.
In one embodiment of the invention, the protective plate is a steel plate.
The embodiment of the invention also provides an LED lamp bead, which comprises: the LED light source comprises an LED chip, a first light-emitting conversion adhesive layer, a second light-emitting conversion adhesive layer and a light blocking layer; the first luminescence conversion glue layer and the second luminescence conversion glue layer are single-medium luminescence conversion layers;
the first light-emitting conversion adhesive layer is located on the light-emitting upper surface of the LED chip, the second light-emitting conversion adhesive layer is located on the first light-emitting conversion adhesive layer, the light blocking layer is located on the side surface of the LED chip, and the upper surface of the light blocking layer is not lower than the upper surface of the second light-emitting layer.
In an embodiment of the invention, a size of a horizontal plane of the first light emitting conversion adhesive layer is the same as a size of a light emitting upper surface of the LED chip, and a size of a horizontal plane of the second light emitting conversion adhesive layer is the same as the size of the light emitting upper surface of the LED chip.
The invention has the beneficial effects that:
according to the LED chip packaging method and the LED lamp bead provided by the embodiment of the invention, when the LED lamp bead is packaged and prepared, the first light-emitting conversion adhesive layer is arranged on the light-emitting upper surface of the LED chip to be packaged, the second light-emitting conversion adhesive layer is arranged on the first light-emitting conversion adhesive layer, wherein the first light-emitting conversion adhesive layer and the second light-emitting conversion adhesive layer are single-medium light-emitting conversion layers, the light-blocking layer is arranged on the side surface of the LED chip to be packaged, the upper surface of the light-blocking layer is not lower than the upper surface of the second light-emitting conversion adhesive layer, and finally the light-blocking layer, the first light-emitting conversion adhesive layer and the second light-emitting conversion adhesive layer are cured under the preset curing condition until the first light-emitting conversion adhesive layer, the second light-emitting conversion adhesive layer. In the LED lamp bead prepared by the method, the first light-emitting conversion adhesive layer and the second light-emitting conversion adhesive layer are sequentially arranged on the upper light-emitting surface of the LED chip, and the two light-emitting conversion layers are single-medium light-emitting conversion layers, so that light emitted from the LED chip can be sequentially and uniformly converted in the two light-emitting conversion layers, and finally the light of the LED lamp bead is more uniform, the color difference, yellow spots and other conditions can be reduced, and the light efficiency is improved.
Additional features and corresponding advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
Fig. 1 is a schematic diagram of a conventional wafer-level packaged LED lamp bead with five light emitting surfaces;
FIG. 2 is a schematic diagram of a conventional wafer-level packaged LED lamp bead with single-sided light emission;
fig. 3 is a flowchart of a method for packaging an LED chip according to an embodiment of the present invention;
fig. 4 is another flowchart of a method for packaging an LED chip according to an embodiment of the present invention;
fig. 5 is a flowchart of a method for packaging an LED chip according to a second embodiment of the present invention;
fig. 6 is a schematic diagram of a first preparation state of batch-prepared wafer-level packaged LED lamp beads according to a second embodiment of the present invention;
fig. 7 is a schematic diagram of a second preparation state of batch-prepared wafer-level packaged LED lamp beads according to a second embodiment of the present invention;
fig. 8 is a schematic diagram of a third preparation state of batch-prepared wafer-level packaged LED lamp beads according to the second embodiment of the present invention;
fig. 9 is a schematic diagram of a fourth preparation state of batch-prepared wafer-level packaged LED lamp beads according to the second embodiment of the present invention;
fig. 10 is a schematic diagram of a fifth preparation state of batch-prepared wafer-level packaged LED lamp beads according to the second embodiment of the present invention;
fig. 11 is a schematic diagram of a sixth preparation state of batch-prepared wafer-level packaged LED lamp beads according to the second embodiment of the present invention;
fig. 12 is a schematic diagram of a seventh preparation state of batch-prepared wafer-level packaged LED lamp beads according to the second embodiment of the present invention;
fig. 13 is a schematic diagram of an eighth preparation state of batch-prepared wafer-level packaged LED lamp beads according to the second embodiment of the present invention;
fig. 14 is a schematic view of an LED lamp bead provided in the third embodiment of the present invention;
fig. 15 is another schematic diagram of an LED lamp bead provided in the third embodiment of the present invention;
in fig. 1, 1 is a CSP LED lamp bead, 11 is an LED chip, 12 is a chip electrode, and 13 is a fluorescent adhesive layer; in fig. 2, 2 is a CSP LED lamp bead, 21 is an LED chip, 22 is a chip electrode, 23 is a white wall adhesive layer, and 24 is a fluorescent adhesive layer; in FIG. 6, 61 is an LED chip, and 62 is a preparation carrier; in fig. 7, 61 is an LED chip, 62 is a preparation carrier, and 63 is a protection plate; in fig. 8, 61 is an LED chip, 62 is a preparation carrier, 63 is a protective plate, and 64 is a red fluorescent glue layer; in fig. 9, 61 is an LED chip, 62 is a preparation carrier, 63 is a protective plate, 64 is a red fluorescent glue layer, and 65 is a green fluorescent glue layer; in fig. 10, 61 is an LED chip, 62 is a preparation carrier, 64 is a red fluorescent glue layer, and 65 is a green fluorescent glue layer; in fig. 11, 61 is an LED chip, 62 is a preparation carrier, 64 is a red fluorescent glue layer, 65 is a green fluorescent glue layer, and 66 is a white wall glue layer; in fig. 12, 61 is an LED chip, 62 is a preparation carrier, 64 is a red fluorescent glue layer, 65 is a green fluorescent glue layer, and 66 is a white wall glue layer; in fig. 13, 61 is an LED chip, 64 is a red phosphor layer, 65 is a green phosphor layer, and 66 is a white wall layer; in fig. 14, 1401 is an LED chip, 1402 is a first light emitting conversion adhesive layer, 1403 is a second light emitting conversion adhesive layer, and 1404 is a light blocking layer; in fig. 15, 1401 is an LED chip, 1402 is a first light emission conversion adhesive layer, 1403 is a second light emission conversion adhesive layer, 1404 is a light blocking layer, and 1405 is a chip electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The first embodiment is as follows:
in order to solve the problem of poor light-emitting uniformity of an LED product due to the fact that a fluorescent adhesive layer mixed with a plurality of light-emitting conversion media with different excitation efficiencies is arranged in the LED product in the prior art, this embodiment provides a new LED chip packaging method, and an LED lamp bead prepared by the LED chip packaging method has uniform light emission and high light-emitting efficiency, and please refer to the flowchart of the LED chip packaging method shown in fig. 3 below:
s3: and arranging a first light-emitting conversion glue layer on the light-emitting upper surface of the LED chip to be packaged.
S6: and a second light-emitting conversion adhesive layer is arranged on the first light-emitting conversion adhesive layer.
In this embodiment, the first luminescence conversion glue layer and the second luminescence conversion glue layer are both single-medium luminescence conversion layers, and are used for performing color conversion on colors of light emitted by the LED chip. By a single-medium luminescence conversion layer is meant that the medium in the layer for color conversion of the light emitted by the LED chip is only one, i.e. the excitation efficiency of the luminescence conversion medium in the layer is necessarily the same. In this embodiment, the luminescence conversion layer may be a phosphor layer containing phosphor, or may be a colloid containing quantum dot photoluminescent material, or other luminescence conversion glue capable of realizing luminescence conversion.
Optionally, the first light-emitting conversion adhesive layer in this embodiment is a first fluorescent adhesive layer, and the second light-emitting conversion adhesive layer is a second fluorescent adhesive layer, specifically, the first fluorescent adhesive layer may be sprayed on the upper surface of the LED chip through a spraying process, and the second fluorescent adhesive layer may be sprayed on the first fluorescent adhesive layer through a spraying process. In addition, printing, coating, dispensing, molding, and the like are optional ways to realize the arrangement of the luminescence conversion layer. The specific types of the first fluorescent adhesive layer and the second fluorescent adhesive layer in this embodiment can be flexibly set according to the color of light required to be finally emitted by the LED product, for example, when white light needs to be emitted, if the LED chip is a blue light chip, the first fluorescent adhesive layer can be a red fluorescent adhesive layer, and the second fluorescent adhesive layer can be a green fluorescent adhesive layer; of course, in other embodiments, the first phosphor layer may be a green phosphor layer and the second phosphor layer may be a red phosphor layer.
It should be noted that, in the above steps S3 and S6, both the first light emission conversion glue layer and the second light emission conversion glue layer are provided in an uncured state, and specifically, may be in a liquid state or a powder state.
S9: and arranging a light blocking layer on the side surface of the LED chip to be packaged, so that the upper surface of the light blocking layer is not lower than that of the second light-emitting conversion adhesive layer.
The light blocking layer in this embodiment may be a white wall adhesive layer, and the white wall adhesive layer may be disposed on the side surface of the LED chip through a dispensing process or a molding process. The white wall glue layer in this embodiment may contain silica gel of titanium dioxide or barium sulfate, so that the white wall glue layer may effectively block light emitted from the side surface of the LED chip.
A general LED chip has four side surfaces, each of which is a light emitting surface, and the top surface of the LED chip is also a light emitting surface. Therefore, the LED chip generally has a side light-emitting surface and a top light-emitting surface. In order to apply the LED lamp beads to some special occasions, the light blocking layer can be arranged on the side light emitting surface of the LED chip as required to block light emitted by the LED chip, for example, the light blocking layer can be arranged on three sides of the LED chip, and the LED lamp beads formed in this way are two-side light emitting lamp beads. Preferably, the light blocking layers can be arranged on all the side faces of the LED chip, namely the side faces of the LED chip are completely coated by the light blocking layers, and the formed LED lamp bead is the single-face light-emitting lamp bead.
S12: and curing the light blocking layer, the first light-emitting conversion adhesive layer and the second light-emitting conversion adhesive layer under a preset curing condition until the first light-emitting conversion adhesive layer, the second light-emitting conversion adhesive layer and the light blocking layer are completely combined and cured.
It should be noted that, in step S12, the first light-emitting conversion adhesive layer and the second light-emitting conversion adhesive layer are completely bonded, the first light-emitting conversion adhesive layer and the light-blocking layer are completely bonded, the second light-emitting conversion adhesive layer and the light-blocking layer are completely bonded, and the first light-emitting conversion adhesive layer, the second light-emitting conversion adhesive layer and the light-blocking layer are all in a completely cured state.
In this embodiment, the LED chip may be an LED chip with a flip structure, and in the LED chip with the flip structure, a positive electrode and a negative electrode are disposed at a bottom portion opposite to the light exit surface (i.e., the light exit upper surface) of the top surface, so as to electrically connect the LED chip with the outside. Of course, besides the LED chip with the flip-chip structure, the LED chip with the front-mounted structure and the LED chip with the vertical structure may be used to package and prepare the wafer-level packaged LED lamp bead in other examples of this embodiment. However, in the LED chip with the normal mounting structure, the electrodes are disposed on the top surface of the LED chip, and the electrodes and the substrate need to be connected by gold wires, so that the inconvenience of disposing the luminescence conversion layer during the packaging process may occur, and therefore, the chip of the LED with the flip-chip structure is preferably used in this embodiment.
In one example of this embodiment, only one curing process may be included. That is, S3, S6, S9, and S12 are sequentially performed according to the above, where S12 specifically includes: and curing the light blocking layer in an uncured state, the first light-emitting conversion adhesive layer in an uncured state and the second light-emitting conversion adhesive layer in an uncured state under a preset curing condition, and directly converting the uncured state into a cured state. The preset curing condition may be baking for 220 minutes at 150 to 180 ℃, and it should be noted that the baking temperature and baking time may be flexibly set according to the specific materials of the first light emitting conversion glue layer, the second light emitting conversion glue layer and the light blocking layer.
In another example provided by the present embodiment, a two-shot curing process may be included. The preparation process can be shown in fig. 4, and specifically, between the above steps S6 and S9, a first curing process is performed, which includes:
s8: and curing the first light-emitting conversion glue layer and the second light-emitting conversion glue layer to a semi-cured state under a preset first curing condition.
In this embodiment, after the curing is performed under the first curing condition, the first light emitting conversion glue layer and the second light emitting conversion glue layer reach a semi-cured state, where the semi-cured (also referred to as an incompletely cured) state means that the first light emitting conversion glue layer and the second light emitting conversion glue layer are neither in a liquid flowing state nor in a completely cured state, but are in a state between the liquid state and the completely cured state. The first curing condition can be flexibly set according to the material characteristics, the material consumption and the like of the first luminescence conversion glue layer and the second luminescence conversion glue layer. For example, in one example, the first curing conditions include: baking at 80 deg.C for 20-30 min.
It should be understood that the way of semi-curing the first light emitting conversion glue layer and the second light emitting conversion glue layer in this embodiment is not limited to the way of baking, and besides baking and curing, an ultraviolet curing way may also be adopted, that is, ultraviolet light is adopted to irradiate the first light emitting conversion glue layer and the second light emitting conversion glue layer to realize semi-curing. In addition to the two semi-curing solutions, any other method capable of controlling the curing degree of the first luminescence conversion glue layer and the second luminescence conversion glue layer can be adopted.
After the first curing process is performed in step S8, a second curing process is performed in step S12, in which case step S12 substantially includes:
s120: and curing the light blocking layer and the first and second light-emitting conversion glue layers in a semi-cured state under a preset second curing condition until the first and second light-emitting conversion glue layers and the light blocking layer are completely combined and cured.
In this embodiment, after the curing is performed under the second curing condition, the light blocking layer, the first light emitting conversion adhesive layer and the second light emitting conversion adhesive layer are completely bonded and completely cured. The second curing condition in this embodiment can be flexibly set according to the material characteristics, the material usage amount, and the like of the first light emitting conversion adhesive layer, the second light emitting conversion adhesive layer, and the light blocking layer. For example, in one example, the second curing conditions include: the baking time is 150 to 200 minutes under the environment with the temperature of 150 ℃, and it should be noted that the specific baking temperature and baking time can be flexibly set according to the specific application scene.
It should be understood that the complete curing manner of the first light-emitting conversion adhesive layer, the second light-emitting conversion adhesive layer and the light blocking layer in this embodiment is not limited to the baking manner, and besides the baking curing, an ultraviolet curing manner may be adopted, that is, ultraviolet light is adopted to irradiate the first light-emitting conversion adhesive layer, the second light-emitting conversion adhesive layer and the light blocking layer, so as to achieve complete curing. In addition to these two curing schemes, any other curing means may be used.
And curing the first light-emitting conversion adhesive layer, the second light-emitting conversion adhesive layer and the light blocking layer to enable the first light-emitting conversion adhesive layer, the second light-emitting conversion adhesive layer and the light blocking layer to be in a completely cured state, so that the wafer-level packaged LED lamp bead is obtained. In the LED chip packaging method provided in this embodiment, when an LED lamp bead is prepared, a first light-emitting conversion adhesive layer is disposed on a light-emitting upper surface of an LED chip to be packaged, and then a second light-emitting conversion adhesive layer is disposed on the first light-emitting conversion adhesive layer, where the first light-emitting conversion adhesive layer and the second light-emitting conversion adhesive layer are single-medium light-emitting conversion layers, and then a light-blocking layer is disposed on a side surface of the LED chip to be packaged, so that an upper surface of the light-blocking layer is not lower than an upper surface of the second light-emitting conversion adhesive layer, and finally the light-blocking layer, the first light-emitting conversion adhesive layer and the second light-emitting conversion adhesive layer are cured under a preset curing condition until the first light-emitting conversion adhesive layer, the second light-emitting. In the LED lamp bead prepared by the method, the first light-emitting conversion adhesive layer and the second light-emitting conversion adhesive layer are sequentially arranged on the upper light-emitting surface of the LED chip, and the two light-emitting conversion layers are single-medium light-emitting conversion layers, so that light emitted from the LED chip can be sequentially and uniformly converted in the two light-emitting conversion layers, and finally the light of the LED lamp bead is more uniform, the color difference, yellow spots and other conditions can be reduced, and the light efficiency is improved.
Example two:
it should be understood that the LED chip packaging method in the present embodiment is applicable to packaging of a single LED chip, and is also applicable to packaging of a batch of LED chips. The following description will be made by taking an implementation flow of batch packaging as an example. The encapsulation process is shown in fig. 5 and includes:
s501: at least two LED chips to be packaged are arranged on the preparation carrier according to a preset spacing distance.
Fig. 6 is a schematic diagram showing a preparation state of batch-preparing a wafer-level packaged LED lamp bead, in this embodiment, a preparation carrier 62 is an auxiliary device for packaging an LED chip 61 to obtain a wafer-level packaged LED lamp bead, and is not a part of the wafer-level packaged LED lamp bead. In one example of this embodiment, a high temperature resistant film may be selected as the preparation carrier 62 during encapsulation and removed after encapsulation is complete. The high-temperature film in the embodiment is a film which can resist a high temperature of at least more than 150 ℃, and the film comprises a PET (polyethylene terephthalate) base material and an acrylic adhesive, wherein the acrylic adhesive is coated on the surface of the PET base material. Therefore, the surface of the high-temperature film in this embodiment has viscosity, and can adhere to the LED chip 61 placed on the surface of the high-temperature film, thereby preventing the LED chip 61 from moving freely.
In this embodiment, the spacing distance between the LED chips 61 can be flexibly set according to the specification requirement of the wafer-level packaged LED lamp bead to be formed or the requirement of the application scene on the size. The LED chips 61 may be arranged at equal intervals, or may be arranged at unequal intervals as required, as shown in fig. 6.
S502: the protection plate provided with the opening is placed on the LED chip to be packaged, the size and the position of the opening correspond to those of the LED chip to be packaged, and the upper surface of the protection plate is not lower than that of the LED chip to be packaged.
As shown in fig. 7, the size and position of the opening of the protection plate 63 are completely matched with the LED chip 61, that is, the size of the opening of the protection plate 63 is the same as the size of the upper surface of the LED chip 61, and at this time, the upper surface of the protection plate 63 is flush with the upper surface of the LED chip 61 to be packaged, and it should be noted that, in other embodiments, each opening of the protective plate 63 has its corresponding LED chip 61, through which an emitting conversion glue layer can be disposed on the upper surface of the LED chip 61, therefore, optionally, the size of the opening corresponding to each opening may be smaller than the upper surface of the LED chip 61 corresponding to the opening, and at this time, the upper surface of the protection plate 63 may be slightly higher than the upper surface of the LED chip 61, this difference in height equals the thickness of protection shield 63, and in the LED lamp pearl that forms like this, the size of the upper surface of LED chip will be greater than the size of luminous conversion glue film horizontal plane.
The protection plate 63 has an insulating function except for the opening region, so as to prevent the material of the luminescence conversion layer from falling into the gap between the LED chips 61 to be packaged, so the region except for the opening region on the protection plate 63 can be a net structure, or can be a solid structure, and it should be noted that, when there is a net structure, for example, when this protection plate 63 is a steel net, the grid space therein should be small enough as long as the material of the luminescence conversion layer cannot fall into the gap between the LED chips 61 from the net.
S503: and spraying a red fluorescent glue layer on the light emergent upper surface of the LED chip to be packaged.
As shown in fig. 8, when the red phosphor layer 64 is sprayed on the light-emitting upper surface of the LED chip 61, the red phosphor layer 64 may cover the non-opening region of the protection plate 63. It should be noted that, because the protective plate 63 is provided between the LED chips 61 to be packaged, the red phosphor can be prevented from covering other regions than the upper surfaces of the LED chips 61, that is, from falling into the gaps between the LED chips 61 to be packaged
S504: and spraying a green fluorescent glue layer on the red fluorescent glue layer.
Referring to fig. 9, fig. 9 is a schematic diagram showing a preparation state in which a green phosphor layer 65 is sprayed on a red phosphor layer 64 when wafer-level packaged LED lamp beads are prepared in batch. The thickness of the red phosphor layer 64 and the thickness of the green phosphor layer 65 sprayed in this embodiment may be between 0.05 mm and 0.15 mm. The red phosphor layer 64 and the green phosphor layer 65 in the present embodiment may be of a sulfide system or of a silicate, aluminate, or the like, but in order to obtain good light emission characteristics, stabilize light emission and increase light emission efficiency, a nitride system phosphor is preferably used.
The main material in the red nitride phosphor layer in this embodiment may be Eu2+Activated alkaline earth nitrides, M2Si5N8(M ═ at least one of Ca, Sr, and Ba elements), and the main material in the nitride green phosphor layer in the present embodiment may be X3Si6O12N2And the nitride red phosphor and the nitride green phosphor have stable physicochemical properties, are not easy to decompose in air and water, have small light decay and high luminescence quantum, and therefore, the LED lamp bead prepared by the method has stable luminescence.
It should be understood that the present embodiment is only exemplified by spraying the red phosphor layer 64 and the green phosphor layer 65 on the light emitting upper surface of the LED chip 61 in sequence, and in other implementations, the green phosphor layer 65 and the red phosphor layer 64, or other phosphor layers or quantum dot photoluminescent materials may also be sprayed on the light emitting upper surface of the LED chip 61 in sequence. It should be noted that the red phosphor layer in this embodiment may be a mixture of red phosphor and transparent silica gel, and similarly, the green phosphor layer may also be a mixture of green phosphor and transparent silica gel. Of course, the red phosphor layer in the embodiment may also only include red phosphor, and the green phosphor layer may also only include green phosphor.
Of course, when other types of phosphor layers are sprayed, it is preferable to ensure that the wavelength of the color segment of the phosphor layer contacting the upper surface of the LED chip is greater than the wavelength of the color segment of the phosphor layer above the phosphor layer, that is, the wavelength of the color segment of the first luminescence conversion adhesive layer in the above embodiment is greater than the wavelength of the color segment of the second luminescence conversion adhesive layer, so that the light emitted from the LED chip does not excite the substances in the second luminescence conversion adhesive layer again after passing through the first luminescence conversion adhesive layer.
S505: and removing the protective plate placed on the LED chip to be packaged, and removing the light-emitting conversion layer when the light-emitting conversion layer exists above the non-opening area of the protective plate.
For step S505, see fig. 10. In fig. 10, after the protective plate 63 is removed, the red phosphor and the green phosphor do not exist in the gap between the LED chips 61 to be packaged.
S506: and curing the red fluorescent glue layer and the green fluorescent glue layer to a semi-cured state under a preset first curing condition.
It is assumed that the red phosphor layer 64 and the green phosphor layer 65 are semi-cured by baking and curing in this embodiment, the baking temperature is 80 ℃, and the baking time is 25 minutes, so that after 25 minutes of baking, the red phosphor layer 64 and the green phosphor layer 65 will be changed from a flowing liquid state to a no-flowing state.
S507: and arranging light blocking layers in gaps among the LED chips to be packaged in a dispensing manner.
Taking the light blocking layer in step S507 as a white wall adhesive layer as an example for description, in step S507, the upper surface of the white wall adhesive layer 66 may be flush with the upper surface of the green fluorescent adhesive layer 65, specifically, as shown in fig. 11, it should be noted that, for the LED chip 61 at the edge, all the side surfaces thereof may be completely covered by the white wall adhesive layer 66, at this time, besides the white wall adhesive needs to be filled in the gap between the LED chips 61, the white wall adhesive needs to be further disposed on the side surface of the edge of the LED chip 61 at the edge, and the corresponding preparation state is also shown in fig. 11.
S508: and curing the white wall glue layer and the red fluorescent glue layer and the green fluorescent glue layer in a semi-cured state under a preset second curing condition until the white wall glue layer, the red fluorescent glue layer and the green fluorescent glue layer are completely combined and cured.
It is assumed that the white wall glue layer 66, the red fluorescent glue layer 64 and the green fluorescent glue layer 65 are completely cured by baking and curing in the embodiment, the baking temperature is 150 ℃, and the baking time is 180 minutes, so that the white wall glue layer 66, the red fluorescent glue layer 64 and the green fluorescent glue layer 65 become completely cured after 180 minutes of baking at 150 ℃.
S509: and cutting the white wall glue layer among the LED chips.
Specifically, the cutting may be performed along the center line of the space between each adjacent LED chip 61, and the cutting may be performed without cutting the preparation carrier 62 at the bottom, as shown in fig. 12: the cut thickness should be no greater than, and preferably equal to, the sum of the LED core height, the thickness of the red phosphor layer 64, and the thickness of the green phosphor layer 65, which facilitates the subsequent removal of the preparation carrier 62 at one time. Of course, in some examples of the embodiment, the preparation carrier 62 at the bottom of the LED chip 61 may also be cut, and the white wall glue layer 66 may be cut individually after the cutting or in a subsequent use process. It should be noted that the LED lamp bead obtained by the above cutting method only includes one LED chip. It should be noted that, in some embodiments, the white wall adhesive layer may be cut according to the number of LED chips required in the LED lamp bead; even in other embodiments, the white wall adhesive layer may not be cut, and the preparation carrier may be directly removed, so that the obtained LED lamp bead includes a plurality of LED chips, for the preparation method without cutting the white wall adhesive layer, N (N is an integer greater than or equal to 2) preset LED chips need to be arranged on the preparation carrier according to a preset interval distance in step S501, and the finally obtained LED lamp bead includes N LED chips.
S510: and removing the preparation carrier to obtain the wafer-level LED lamp bead.
After the dicing is completed, the preparation carrier 62 at the bottom of the LED chip 61 can be removed at one time, so as to obtain a single wafer level packaged LED bead, as shown in fig. 13.
In the present embodiment, the method of cutting and then removing the preparation carrier 62 is adopted, but in other examples of the present embodiment, the time sequences of the two processes may be interchanged, that is, the preparation carrier 62 may be removed at one time, and then the LED chips 61 that are fixed in the completely cured red fluorescent adhesive layer 64, the completely cured green fluorescent adhesive layer 65, and the completely cured white wall adhesive layer 66 after the preparation carrier 62 is removed may be cut to obtain single wafer-level packaged LED lamp beads.
It should be understood that in some examples of the present embodiment, it is not necessary to separate the LED chips 61 by dicing, that is, two or more LED chips 61 may remain fixed together after dicing.
Through the scheme of preparation LED lamp pearl that this embodiment provided, owing to utilized the isolated effect of protection shield at the in-process of preparation, so can prevent that red phosphor powder and green phosphor powder from dropping the clearance between the LED chip of treating the encapsulation, thereby can not lead to the fact the influence to the follow-up white wall glue's that sets up in the clearance between the LED chip light blocking ability, thereby can be better prevent that the light that LED sent from the side edge leakage of LED chip, in addition, owing to set up red phosphor glue film and green phosphor glue film by supreme down at the light-emitting upper surface of LED chip, so can make all red phosphor powder preferentially receive the excitation, and evenly arouse, then arouse with the green phosphor powder on upper strata, the light efficiency of LED product has been promoted.
Finally, the packaging preparation method for packaging the wafer level packaged LED lamp beads in a batch manner provided by this embodiment can greatly improve the packaging efficiency on the basis of single LED package, improve the industrial production efficiency of the wafer level packaged LED lamp beads, and reduce the production cost.
The LED obtained by the above encapsulation can be applied to various light emitting fields, for example, it can be manufactured into a backlight module applied to a display backlight field (which can be a backlight module of a terminal such as a television, a display, a mobile phone, etc.). The LED lamp bead can be applied to a backlight module, for example, the backlight module comprises a light guide plate and an LED component arranged on the side face of the light guide plate, and the LED component can be formed by the LED lamp beads. The display backlight module can be applied to the fields of display backlight, key backlight, shooting, household lighting, medical lighting, decoration, automobiles, traffic and the like. When the LED backlight source is applied to the key backlight field, the LED backlight source can be used as a key backlight light source of mobile phones, calculators, keyboards and other devices with keys; when the camera is applied to the field of shooting, a flash lamp of a camera can be manufactured; when the lamp is applied to the field of household illumination, the lamp can be made into a floor lamp, a table lamp, an illuminating lamp, a ceiling lamp, a down lamp, a projection lamp and the like; when the lamp is applied to the field of medical illumination, the lamp can be made into an operating lamp, a low-electromagnetic illuminating lamp and the like; when the decorative material is applied to the decorative field, the decorative material can be made into various decorative lamps, such as various colored lamps, landscape illuminating lamps and advertising lamps; when the material is applied to the field of automobiles, the material can be made into automobile lamps, automobile indicating lamps and the like; when the lamp is applied to the traffic field, various traffic lights and various street lamps can be manufactured. The above applications are only a few exemplified applications of the present embodiment, it being understood that the application of the LED is not limited to the above exemplified fields.
Example three:
referring to fig. 14, the LED lamp bead provided in this embodiment includes an LED chip 1401, a first light-emitting conversion glue layer 1402, a second light-emitting conversion glue layer 1403, and a light-blocking layer 1404; the first luminescence conversion glue layer 1402 and the second luminescence conversion glue layer 1403 are single-medium luminescence conversion layers, and the single-medium luminescence conversion layers are only one medium for color conversion of light emitted by the LED chip 1401, that is, excitation efficiency of the luminescence conversion medium in the layers is necessarily the same. In this embodiment, the light emitting conversion layer may be a phosphor layer containing phosphor, for example, the first light emitting conversion glue layer 1402 is a red phosphor glue layer, and the second light emitting conversion glue layer 1403 is a green phosphor glue layer; alternatively, the first light emitting conversion glue layer 1402 is a green phosphor glue layer, and the second light emitting conversion glue layer 1403 is a red phosphor glue layer, and preferably, a nitride red phosphor glue layer and a nitride green phosphor glue layer may be used in this embodiment. Of course, in other embodiments, the phosphor layer may be sulfide system or silicate system. The luminescence conversion layer in this embodiment may also be a colloid containing a quantum dot photoluminescence material, or other luminescence conversion glues capable of realizing luminescence conversion. The first light emitting conversion glue layer 1402 is located on the light emitting upper surface of the LED chip 1401, the second light emitting conversion glue layer 1403 is located on the first light emitting conversion glue layer 1402, the light blocking layer 1404 is located on the side surface of the LED chip 1401, and the upper surface of the light blocking layer 1404 is not lower than the upper surface of the second light emitting layer.
It should be noted that the first light emitting conversion glue layer 1402, the second light emitting conversion glue layer 1403 and the light blocking layer 1404 in the LED lamp bead structure are in a completely cured state.
Preferably, the size of the horizontal plane of the first light-emitting conversion glue layer 1402 in this embodiment is the same as the size of the light-emitting upper surface of the LED chip 1401, and the size of the horizontal plane of the second light-emitting conversion glue layer 1403 is the same as the size of the light-emitting upper surface of the LED chip 1401, that is, as shown in fig. 14, of course, in order to prepare such a structure, the preparation method in the above embodiment may be used, specifically, each LED chip 1401 to be packaged is placed on the preparation carrier, then a protection plate provided with openings is placed on each LED chip 1401, wherein the size and the position of the opening are completely matched with the size and the position of the upper surface of the LED chip 1401, that is, the size of the opening of the protection plate 63 is the same as the size of the upper surface of the LED chip 61, then the first light-emitting conversion glue layer 1402 is disposed on the light-emitting upper surface of the LED chip 1401, and the second light-emitting conversion, due to the blocking effect of the protection plate, materials related to the light emitting conversion layer cannot fall into gaps among the LED chips 1401, after the second light emitting conversion glue layer 1403 is arranged, the protection plate is removed, and materials of the light emitting conversion layer on a non-hole-opening area on the protection plate are removed, so that in the finally formed LED lamp bead, the horizontal size of the first light emitting conversion glue layer 1402 and the horizontal size of the second light emitting conversion glue layer 1403 are the same, the size of the light emitting upper surface of the LED chip 1401 is the same, the light emitting area on the upper surface of the LED chip is fully utilized, in the LED lamp bead, the areas above the light emitting upper surface of the LED chip except the area above the light emitting upper surface of the LED chip are not mixed with the materials of the light emitting conversion layer, the purity of the light blocking layer 1404 on the side surface of the LED chip 1401 is guaranteed, and light emitted from the side surface of the LED chip 1401.
The light blocking layer 1404 in this embodiment may be a white wall glue layer, and the white wall glue layer may contain silica gel of titanium dioxide or barium sulfate, so that the white wall glue layer may effectively block light emitted from the side of the LED chip 1401. Specifically, the degree of the light blocking layer 1404 covering the side surface of the LED chip 1401 may be flexibly set according to a specific application scene, for example, the light blocking layer 1404 may completely cover the side surface of the LED chip 1401, or may only partially cover the side surface.
All the side surfaces of the LED chip 1401 in fig. 14 are covered by the light blocking layer 1404, that is, the LED lamp bead in fig. 14 is a single-side light-emitting lamp bead, and it should be noted that in some other embodiments, part of the side surfaces of the LED chip 1401 may be covered by the light blocking layer 1404.
Referring to fig. 15, in the present embodiment, the LED chip 1401 may be an LED chip 1401 in a flip-chip structure, and in the LED chip 1401 in the flip-chip structure, a chip electrode 1405 is disposed at a bottom portion opposite to a top light exit surface (i.e., a light exit upper surface), and includes a positive electrode and a negative electrode, so that the LED chip 1401 can be electrically connected to the outside. Of course, in addition to the LED chip 1401 of the flip-chip structure, the LED chip 1401 of the front-mount structure and the LED chip 1401 of the vertical structure may be employed in other examples of the present embodiment. However, in the LED chip 1401 of the front-mount structure, the electrodes are disposed on the top surface of the LED chip 1401, and the electrodes and the substrate need to be connected by gold wires, and therefore, there may be a case where it is inconvenient to dispose the luminescence conversion layer during the packaging process, and therefore, the chip of the LED of the flip-chip structure is preferably employed in the present embodiment.
It should be understood that the above embodiments and this embodiment are only exemplary illustrations of disposing two single-medium luminescence conversion layers above an LED chip, and in other embodiments, more luminescence conversion glue layers may be disposed above a second luminescence conversion glue layer, and the preparation method thereof refers to the above embodiments, and is not described herein again.
Finally, it should be noted that the LED lamp bead in this embodiment may be prepared by the LED chip 1401 in each of the above embodiments by using a packaging method, and may also be prepared by using another preparation method. For example, a mixed-medium luminescence conversion layer containing two luminescence color conversion media may be directly disposed on the light-emitting upper surface of the LED chip 1401, and then the two luminescence color conversion media may be layered by using a physical precipitation method, thereby forming the first luminescence conversion glue layer 1402 and the second luminescence conversion glue layer 1403.
In the LED lamp pearl that this embodiment provided, two-layer single medium luminescence conversion layer has set gradually by supreme down at the light-emitting upper surface of LED chip, can make the light that the LED chip sent carry out the colour conversion in this two-layer luminescence conversion layer even in proper order, the luminous homogeneity of LED lamp pearl has been guaranteed, the light efficiency of LED lamp pearl has been promoted, in addition, the side of the LED chip in the LED lamp pearl that this embodiment provided still the cladding has the layer that is in the light, make LED lamp pearl only top surface light-emitting become for probably, the LED lamp pearl of this kind of single face light-emitting can be used in some special fields, for example, can make the operating lamp.
It will be apparent to those skilled in the art that the modules or steps of the embodiments of the invention described above may be implemented in a general purpose computing device, they may be centralized on a single computing device or distributed across a network of multiple computing devices, and alternatively, they may be implemented in program code executable by a computing device, such that they may be stored on a computer storage medium (ROM/RAM, magnetic disk, optical disk) and executed by a computing device, and in some cases, the steps shown or described may be performed in an order different than that described herein, or they may be separately fabricated into individual integrated circuit modules, or multiple ones of them may be fabricated into a single integrated circuit module. Thus, the present invention is not limited to any specific combination of hardware and software.
The foregoing is a more detailed description of embodiments of the present invention, and the present invention is not to be considered limited to such descriptions. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. An LED chip packaging method, comprising:
s3, arranging a first light-emitting conversion glue layer on the light-emitting upper surface of the LED chip to be packaged;
s6, arranging a second light-emitting conversion adhesive layer on the first light-emitting conversion adhesive layer; the first luminescence conversion glue layer and the second luminescence conversion glue layer are single-medium luminescence conversion layers;
s9, arranging a light blocking layer on the side face of the LED chip to be packaged, and enabling the upper surface of the light blocking layer not to be lower than the upper surface of the second light-emitting conversion adhesive layer;
and S12, curing the light blocking layer, the first light-emitting conversion adhesive layer and the second light-emitting conversion adhesive layer under a preset curing condition until the first light-emitting conversion adhesive layer, the second light-emitting conversion adhesive layer and the light blocking layer are completely combined and cured.
2. The LED chip packaging method of claim 1, wherein the first luminescence conversion glue layer is a first fluorescent glue layer, and the process of disposing the first fluorescent glue layer is a spraying process; the second luminescence conversion glue layer is a second fluorescent glue layer, and the process for arranging the second fluorescent glue layer is a spraying process.
3. The LED chip packaging method of claim 1, wherein before S9, further comprising:
s8, curing the first light-emitting conversion glue layer and the second light-emitting conversion glue layer to a semi-cured state under a preset first curing condition;
the S12 includes:
and S120, curing the light blocking layer and the first and second light-emitting conversion glue layers in a semi-cured state under a preset second curing condition until the first light-emitting conversion glue layer, the second light-emitting conversion glue layer and the light blocking layer are completely combined and cured.
4. The LED chip packaging method of claim 3, wherein the first curing conditions comprise: baking at 80 deg.C for 20-30 min; the second curing conditions include: baking the mixture for 150 to 200 minutes in an environment with the temperature of 150 ℃.
5. The method for packaging an LED chip as claimed in claim 1, wherein the light-blocking layer is a white wall glue layer, and the process for disposing the white wall glue layer is a dispensing process or a molding process.
6. The LED chip packaging method of any one of claims 1-5, further comprising, before S3:
s501, arranging at least two to-be-packaged LED chips on a preparation carrier according to a preset spacing distance;
s502, placing a protection board provided with an opening on the LED chip to be packaged, wherein the size and the position of the opening correspond to those of the LED chip to be packaged, and the upper surface of the protection board is not lower than that of the LED chip to be packaged;
before S9, the method further includes:
s505, removing the protective plate placed on the LED chip to be packaged, and removing the light emitting conversion layer when the light emitting conversion layer exists above the non-opening area of the protective plate;
the S9 includes:
and S507, arranging a light blocking layer in the gap between the LED chips to be packaged.
7. The LED chip packaging method of claim 6, further comprising, after the S12:
s509, cutting the light blocking layers among the LED chips;
and S510, removing the preparation carrier to obtain the wafer level packaging LED lamp bead.
8. The LED chip packaging method of claim 6, wherein the protective plate is a steel plate.
9. The utility model provides a LED lamp pearl which characterized in that includes: the LED light source comprises an LED chip, a first light-emitting conversion adhesive layer, a second light-emitting conversion adhesive layer and a light blocking layer; the first luminescence conversion glue layer and the second luminescence conversion glue layer are single-medium luminescence conversion layers;
the first light-emitting conversion adhesive layer is located on the light-emitting upper surface of the LED chip, the second light-emitting conversion adhesive layer is located on the first light-emitting conversion adhesive layer, the light blocking layer is located on the side surface of the LED chip, and the upper surface of the light blocking layer is not lower than the upper surface of the second light-emitting layer.
10. The LED lamp bead of claim 9, wherein the size of the horizontal plane of the first light conversion glue layer is the same as the size of the light-emitting upper surface of the LED chip, and the size of the horizontal plane of the second light conversion glue layer is the same as the size of the light-emitting upper surface of the LED chip.
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| CN106560933A (en) * | 2015-10-05 | 2017-04-12 | 行家光电股份有限公司 | Light-emitting device with angle-guiding reflection structure and manufacturing method thereof |
| TW201727948A (en) * | 2016-01-28 | 2017-08-01 | 行家光電股份有限公司 | Light emitting device with asymmetrical radiation pattern and manufacturing method of the same |
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