CN102779912A - Structure of white light emitting diode and manufacturing method thereof - Google Patents
Structure of white light emitting diode and manufacturing method thereof Download PDFInfo
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- CN102779912A CN102779912A CN201210236623XA CN201210236623A CN102779912A CN 102779912 A CN102779912 A CN 102779912A CN 201210236623X A CN201210236623X A CN 201210236623XA CN 201210236623 A CN201210236623 A CN 201210236623A CN 102779912 A CN102779912 A CN 102779912A
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Abstract
The invention discloses a structure of a white light emitting diode and a manufacturing method of the white light emitting diode. The manufacturing method is characterized by comprising: firstly providing a base plate on which a plurality of light emitting diode chips are arranged; spraying fluorescent powder on the light emitting diode chips, and pasting the light emitting diode chips on a temporary base plate by a temporary adhesive; grinding the bottom part of the base plate, and using the light emitting diodes as a unit to cut out a plurality of grooves on the bottom part of the base plate; coating a reflection layer on the base plate; separating the light emitting diode chips after removing the temporary adhesive and the temporary base plate to form an inclined surface part on each of the two sides of the base plate; coating a reflection layer on the outer layer of the base plate; and arranging light emitting diodes sprayed with fluorescent powder on the base plate. According to the invention, the light is uniformly reflected to excite the fluorescent powder on the light emitting diode chips, so that the white light emitting diodes emit uniform white light.
Description
Technical field
The present invention relates to a kind of light-emitting diode pipe manufacturing method and structure thereof that produces white light.
Background technology
A kind of semiconductor subassembly of light-emitting diodes piping sends the cold light light beam, is applied to indicator light, display panel etc. at present mostly.Simple light-emitting diode only can send versicolor pure color light, if will send white light, then must utilize the mode of sprayed with fluorescent powder mixed light, just can produce white light emitting diode.And light-emitting diode has long, the advantage such as cracky and power saving environmental protection not of efficient height, life-span.
At present general white light emitting diode manufacturing approach is the light-emitting diode chip for backlight unit 34 that will spray fluorescent material 36; As shown in Figure 1, directly, light light-emitting diode chip for backlight unit 34 by behind top perpendicular cuts light-emitting diode chip for backlight unit 34 and the substrate 32; Stimulated luminescence diode chip for backlight unit 34 lip-deep fluorescent material 36; But as shown in Figure 2, the light of light-emitting diode chip for backlight unit 34 can be penetrated by substrate 32 sides, causes the light reflection inhomogeneous; Therefore the white light emitting diode after the encapsulation can present different coloured light in different visual angles.
In view of this, the present invention is directed to the problems referred to above, propose a kind of white light and send out melon, reach a solution of a problem to you diode mechanism and manufacturing approach thereof.
Summary of the invention
The present invention's main purpose is providing a kind of white light emitting diode structure and manufacturing approach thereof; It is to change the shape of substrate and plate the reflector at substrate outer; Can change the angle of light reflection; Evenly the fluorescent material on the stimulated luminescence diode chip for backlight unit makes light-emitting diode can send uniform white light.
For reaching above-mentioned purpose, the present invention provides a kind of manufacturing approach of white light emitting diode, and it is that a substrate is provided, and which is provided with a plurality of light-emitting diode chip for backlight unit; The sprayed with fluorescent powder and expose two electrodes of light-emitting diode chip for backlight unit on light-emitting diode chip for backlight unit surface; Utilize temporary solid glutinous light-emitting diode chip for backlight unit as on the temporary substrate; Grind base plate bottom, and be unit with the light-emitting diode, plural groove is formed on the cutting substrate bottom; Form the surface of a reflector in substrate; Temporary solid and temporary substrate are removed; And to utilize light-emitting diode chip for backlight unit be a unit, utilizes the groove separating base plate, becomes white light emitting diode.
In some preferred embodiments, its improved aspect is embodied in:
In one preferred embodiment, wherein said groove is to can be the V-type groove;
In one preferred embodiment, wherein separate said light-emitting diode chip for backlight unit system said light-emitting diode chip for backlight unit moved on the blue film, utilize expansion should the indigo plant film to isolate this white light emitting diode.
In one preferred embodiment, wherein this temporary then glue is to can be elargol or wax.
In one preferred embodiment, the material of wherein said temporary substrate can be silicon dioxide, aluminium oxide, aluminium nitride, silicon or germanium.
In one preferred embodiment, be that utilized chip cutter or laser beam cut said substrate when wherein cutting said base plate bottom.In one preferred embodiment, wherein the material in this reflector can be aluminium, silver, lead, platinum, aluminium alloy, silver alloy, lead alloy or platinum alloy.
In addition; The present invention also provides a kind of white light emitting diode structure; It is a substrate, and its both sides respectively are provided with an inclined plane part, and is provided with a reflector in the base plate bottom inclined plane part; And substrate is provided with at least one light-emitting diode chip for backlight unit, is to have fluorescent material cloth to be applied to the light-emitting diode chip for backlight unit surface except two electrodes on the light-emitting diode chip for backlight unit.
The white light emitting diode of these structures, the improvement that can have is following:
In one preferred embodiment, wherein this inclined plane part system is by outward inclined-plane upwards, bottom.
In one preferred embodiment, wherein the material in this reflector system can be aluminium, silver, lead, platinum, aluminium alloy, silver alloy, lead alloy or platinum alloy.
In one preferred embodiment, wherein after this electrode application voltage, said light-emitting diode is lighted back system can excite this fluorescent material, converts light into white-light emitting.
In one preferred embodiment, wherein this fluorescent material system is yellow, and the light of said light-emitting diode system is blue light, and this fluorescent material system sends white light with this blue light mixed light.
The beneficial effect that the present invention brings is:
1. to the processing of substrate, make it have good control luminous energy power, to such an extent as to the beam angle of light-emitting diode can be controlled arbitrarily, light output is better in the consistency of different angles, and color is even.Has higher light output efficiency simultaneously.
2. utilize groove to be shaped to reflecting surface, the light-emitting diode of this mode moulding, its reflecting effect can be by the technology controlling and process of groove moulding, and its light output performance consistency is better.
Description of drawings
Embodiment is described further the present invention below in conjunction with accompanying drawing:
Fig. 1 is prior art cutting light-emitting diode chip for backlight unit sketch map.
Fig. 2 is a prior art white light emitting diode structural representation.
Fig. 3 is the structural representation of one embodiment of the invention.
Fig. 4 is the luminous sketch map of stimulated luminescence diode chip for backlight unit embodiment illustrated in fig. 3.
Fig. 5 is positioned at sketch map on the substrate 12 for light-emitting diode chip for backlight unit embodiment illustrated in fig. 3.
Fig. 6 is light-emitting diode chip for backlight unit sprayed with fluorescent powder 16 sketch mapes embodiment illustrated in fig. 3.
Fig. 7 is the temporary solid 18 of covering embodiment illustrated in fig. 3 and the sketch map of temporary substrate 20.
Fig. 8 is cutting substrate 20 sketch mapes embodiment illustrated in fig. 3.
Fig. 9 is formation reflector 22 sketch mapes embodiment illustrated in fig. 3.
Figure 10 is the sketch map that removes temporary solid and temporary substrate embodiment illustrated in fig. 3.
Figure 11 is a separation light-emitting diode chip for backlight unit sketch map embodiment illustrated in fig. 3.
Embodiment
One embodiment of the invention is a kind of white light emitting diode structure and manufacturing approach thereof; It is to change the substrate shape of light-emitting diode chip for backlight unit and substrate is plated the reflector to change the light refraction direction; Evenly the refracted ray excitated fluorescent powder makes white light emitting diode send equal white light.
White light emitting diode 10 structures are as shown in Figure 3; The present invention system is by a substrate 12; Present embodiment system substrate 12 both sides for example respectively is provided with one by bottom outward inclined plane part 124 upwards, makes the substrate 12 and the angle of inclined plane part 124 form an angle, and wherein substrate 12 more can be acute angle or right angle with the angle of inclined plane part 124; And substrate 12 surfaces are provided with a light-emitting diode chip for backlight unit 14; The surface system spraying of light-emitting diode chip for backlight unit 14 except two electrodes 142 is covered with fluorescent material 16, and substrate 12 bottoms and inclined plane part 124 are provided with one deck reflector 22, and the material in reflector 22 can be aluminium, silver, lead, platinum, aluminium alloy, silver alloy, lead alloy or platinum alloy.Fig. 4 system is fluorescent material 16 sketch mapes on the present invention's the stimulated luminescence diode chip for backlight unit 14; It is can light light-emitting diode chip for backlight unit 14 after applying a voltage to two electrodes 142; And 14 light that send of light-emitting diode chip for backlight unit can be evenly reflected in reflector 22, and evenly excitated fluorescent powder 16, convert light into white-light emitting; And the illuminant colour of the color of fluorescent material and light-emitting diode is complementary; Utilize proper proportion can form white light, the fluorescent material 16 of present embodiment is to be rendered as yellow, sends white light behind the blue light mixed light that can be sent with the present invention's light-emitting diode chip for backlight unit 14.
The manufacturing process of white light emitting diode please cooperate with reference to Fig. 5 to Figure 11, at first please with reference to Fig. 5, a substrate 12 is provided, and has been manufactured with a plurality of light-emitting diode chip for backlight unit 14 on it; Next as shown in Figure 6, be that fluorescent material 16 is sprayed at a plurality of light-emitting diode chip for backlight unit 14 surfaces, and expose two electrodes 142; As shown in Figure 7; Utilize temporary solid 18 with light-emitting diode chip for backlight unit 14 gluings on temporary substrate 20; The material of wherein temporary solid 18 can be elargol or wax, and the material of temporary substrate 20 can be silicon dioxide, aluminium oxide, aluminium nitride, silicon or germanium; Next as shown in Figure 8; Attenuate grinds with substrate 12 bottoms in system; Utilize chip cutting device or laser beam cutting substrate 12, and be unit, cut out plural groove 122 in the bottom of substrate 12 with each light-emitting diode chip for backlight unit 14; Its further groove 122 can be the V-type groove, to distinguish at a distance from plural light-emitting diode chip for backlight unit 14; Please with reference to Fig. 9, tie up to substrate 12 surfaces and form a reflector 22 again, wherein the material in reflector 22 can be aluminium, silver, lead, platinum, aluminium alloy, silver alloy, lead alloy or platinum alloy.Shown in figure 10, temporary solid on the light-emitting diode chip for backlight unit 14 18 and temporary substrate 20 are removed.At last, be unit with light-emitting diode chip for backlight unit 14, utilize groove 122 separating base plates 12; To obtain independently white light emitting diode 10 of plural number, shown in figure 11, can and go up whole light-emitting diode chip for backlight unit 14 with substrate 12 and move to and stick on the blue film 24; Because of blue film 24 is ductile; Expansible blue film 24, so separating base plate 12 with its on light-emitting diode chip for backlight unit 14, to obtain a plurality of independently white light emitting diodes 10 as shown in Figure 3.
Given this, the present invention can reach and make evenly refracted ray of white light emitting diode, and the fluorescent material on the stimulated luminescence diode chip for backlight unit makes white light emitting diode can send equal white light.
It is thus clear that, to the processing of substrate 12, make it have good control luminous energy power, to such an extent as to the beam angle of light-emitting diode can be controlled arbitrarily, light output is better in the consistency of different angles, color is even.Has higher light output efficiency simultaneously; On the other hand, the light-emitting diode of this mode moulding, its reflecting effect can be by the technology controlling and process of groove moulding, and its light output performance consistency is better.
The above is merely preferred embodiment of the present invention, so can not limit the scope that the present invention implements according to this, the equivalence of promptly doing according to claim of the present invention and description changes and modifies, and all should still belong in the scope that the present invention contains.
Claims (12)
1. the manufacturing approach of a white light emitting diode, it is characterized in that: it may further comprise the steps:
One substrate is provided, and said substrate is provided with plural light-emitting diode chip for backlight unit;
Fluorescent powder jet printing in said light-emitting diode chip for backlight unit surface, and is exposed two electrodes of said light-emitting diode;
Utilize temporary then glue, with temporary transient glutinous the placing on the temporary substrate of said light-emitting diode chip for backlight unit;
Grind the said base plate bottom of attenuate, and be unit, cut said base plate bottom to form plural groove with said light-emitting diode;
Form a reflector at said substrate surface;
Remove said temporary solid and said temporary substrate; And
Said light-emitting diode chip for backlight unit is a unit, utilizes said groove to separate said substrate, to obtain independently white light emitting diode of plural number.
2. a kind of according to claim 1 manufacturing approach of white light emitting diode is characterized in that: wherein said groove system can be the V-type groove.
3. a kind of according to claim 1 manufacturing approach of white light emitting diode is characterized in that: wherein separate said light-emitting diode chip for backlight unit system said light-emitting diode chip for backlight unit moved on the blue film, utilize expansion should the indigo plant film to isolate this white light emitting diode.
4. a kind of according to claim 1 manufacturing approach of white light emitting diode is characterized in that: wherein this temporary then glue system can be elargol or wax.
5. a kind of according to claim 1 manufacturing approach of white light emitting diode, it is characterized in that: the material of wherein said temporary substrate can be silicon dioxide, aluminium oxide, aluminium nitride, silicon or germanium.
6. a kind of according to claim 1 manufacturing approach of white light emitting diode is characterized in that: when wherein cutting said base plate bottom is that utilized chip cutter or laser beam cut said substrate.
7. a kind of according to claim 1 manufacturing approach of white light emitting diode, it is characterized in that: wherein the material in this reflector can be aluminium, silver, lead, platinum, aluminium alloy, silver alloy, lead alloy or platinum alloy.
8. the structure of a white light emitting diode, it is characterized in that: it comprises:
One substrate, two side-lines of said substrate respectively are provided with an inclined plane part;
At least one light-emitting diode chip for backlight unit is positioned on the said substrate;
One fluorescent material is positioned at said light-emitting diode chip for backlight unit surface, and exposes two electrodes of said light-emitting diode;
And
One reflector is positioned at bottom and this inclined plane part of said substrate.
9. like the structure of the said a kind of white light emitting diode of claim 8, it is characterized in that: wherein this inclined plane part system is by outward inclined-plane upwards, bottom.
10. like the said a kind of white light emitting diode structure of claim 8, it is characterized in that: wherein the material in this reflector system can be aluminium, silver, lead, platinum, aluminium alloy, silver alloy, lead alloy or platinum alloy.
11. like the said a kind of white light emitting diode structure of claim 8, it is characterized in that: wherein after this electrode application voltage, said light-emitting diode is lighted back system can excite this fluorescent material, converts light into white-light emitting.
12. like the said a kind of white light emitting diode structure of claim 11, it is characterized in that: wherein this fluorescent material system is yellow, and the light of said light-emitting diode system is blue light, and this fluorescent material system sends white light with this blue light mixed light.
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| CN201210236623XA CN102779912A (en) | 2012-07-09 | 2012-07-09 | Structure of white light emitting diode and manufacturing method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103258773A (en) * | 2013-05-21 | 2013-08-21 | 合肥彩虹蓝光科技有限公司 | Semiconductor component coating film processing method |
| CN103872195A (en) * | 2014-03-31 | 2014-06-18 | 海迪科（南通）光电科技有限公司 | Novel flip high-voltage chip epitaxial wafer |
| CN105938861A (en) * | 2015-03-06 | 2016-09-14 | 株式会社迪思科 | Method for manufacturing optical device chip |
| CN107731982A (en) * | 2016-08-11 | 2018-02-23 | 晶能光电（江西）有限公司 | A kind of thin-film LED preparation method |
| CN112750921A (en) * | 2019-10-30 | 2021-05-04 | 山东浪潮华光光电子股份有限公司 | Manufacturing method of gallium arsenide-based LED chip |
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| CN101764047A (en) * | 2008-12-23 | 2010-06-30 | 国际商业机器公司 | Method of thinning a semiconductor substrate |
| CN101853913A (en) * | 2009-04-02 | 2010-10-06 | 采钰科技股份有限公司 | White-light light emitting chips and fabrication methods thereof |
| CN102246325A (en) * | 2008-12-08 | 2011-11-16 | 克利公司 | Light emitting diode with improved light extraction |
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| KR20050013046A (en) * | 2003-12-24 | 2005-02-02 | 주식회사 이츠웰 | GaN-based LED and manufacturing method of the same utilizing the technique of saphire etching |
| CN102246325A (en) * | 2008-12-08 | 2011-11-16 | 克利公司 | Light emitting diode with improved light extraction |
| CN101764047A (en) * | 2008-12-23 | 2010-06-30 | 国际商业机器公司 | Method of thinning a semiconductor substrate |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103258773A (en) * | 2013-05-21 | 2013-08-21 | 合肥彩虹蓝光科技有限公司 | Semiconductor component coating film processing method |
| CN103872195A (en) * | 2014-03-31 | 2014-06-18 | 海迪科（南通）光电科技有限公司 | Novel flip high-voltage chip epitaxial wafer |
| CN105938861A (en) * | 2015-03-06 | 2016-09-14 | 株式会社迪思科 | Method for manufacturing optical device chip |
| CN107731982A (en) * | 2016-08-11 | 2018-02-23 | 晶能光电（江西）有限公司 | A kind of thin-film LED preparation method |
| CN112750921A (en) * | 2019-10-30 | 2021-05-04 | 山东浪潮华光光电子股份有限公司 | Manufacturing method of gallium arsenide-based LED chip |
| CN112750921B (en) * | 2019-10-30 | 2022-03-11 | 山东浪潮华光光电子股份有限公司 | Manufacturing method of gallium arsenide-based LED chip |
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Application publication date: 20121114 |