TWI433360B - White light emitting diode structure and manufacturing method thereof - Google Patents
White light emitting diode structure and manufacturing method thereof Download PDFInfo
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- TWI433360B TWI433360B TW100128374A TW100128374A TWI433360B TW I433360 B TWI433360 B TW I433360B TW 100128374 A TW100128374 A TW 100128374A TW 100128374 A TW100128374 A TW 100128374A TW I433360 B TWI433360 B TW I433360B
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- emitting diode
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims description 54
- 239000000843 powder Substances 0.000 claims description 25
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 16
- 239000000853 adhesive Substances 0.000 claims description 11
- 230000001070 adhesive effect Effects 0.000 claims description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 229910000978 Pb alloy Inorganic materials 0.000 claims description 4
- 229910001260 Pt alloy Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000011133 lead Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 210000004508 polar body Anatomy 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical group O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 239000010955 niobium Substances 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 21
- 230000005284 excitation Effects 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000015096 spirit Nutrition 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
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Description
本發明係有關一種改變發光二極體之光方向，可均勻激發發光二極體上之螢光粉，製造出均勻發光的白光發光二極體之技術，特別是指一種白光發光二極體結構及其製造方法。The invention relates to a technology for changing the light direction of a light-emitting diode, uniformly exciting the phosphor powder on the light-emitting diode, and producing a uniform light-emitting white light-emitting diode, in particular, a white light-emitting diode structure. And its manufacturing method.
發光二極體係一種半導體元件，係發出冷光光束，目前大多應用於指示燈、顯示板等。單純的發光二極體僅能發出各種顏色的純色光，若要發出白光，則必須利用噴塗螢光粉混光的方式，才能製作出白光發光二極體。而發光二極體，具有效率高、壽命長、不易破損及省電環保等優點。Light-emitting diode system A semiconductor component that emits a luminescent light beam, and is currently mostly used for indicator lights, display panels, and the like. A simple light-emitting diode can only emit pure color light of various colors. In order to emit white light, it is necessary to use a method of mixing fluorescent powder to produce a white light emitting diode. The light-emitting diode has the advantages of high efficiency, long life, not easy to break, and energy saving and environmental protection.
目前一般白光發光二極體製造方法係將噴塗好螢光粉36之發光二極體晶片34，如第1A圖所示，直接由上方垂直切割發光二極體晶片34與基板32後，點亮發光二極體晶片34，激發發光二極體晶片34表面上的螢光粉36，但如第1B圖所示，發光二極體晶片34之光線會由基板32側邊射出，造成光線反射不均勻，因此封裝後的白光發光二極體於不同的視角，會呈現不同的色光。At present, a general white light emitting diode manufacturing method is to spray the light emitting diode 34 of the fluorescent powder 36. As shown in FIG. 1A, the light emitting diode wafer 34 and the substrate 32 are vertically cut directly from above, and then lighted. The light-emitting diode wafer 34 excites the phosphor powder 36 on the surface of the light-emitting diode wafer 34. However, as shown in FIG. 1B, the light of the light-emitting diode wafer 34 is emitted from the side of the substrate 32, causing light to be reflected. Uniform, so the encapsulated white light-emitting diodes will exhibit different shades of light at different viewing angles.
有鑑於此，本發明係針對上述之問題，提出一種白光發光二極體結構及其製造方法，以有效解決習知之問題。In view of the above, the present invention is directed to the above problems, and provides a white light emitting diode structure and a manufacturing method thereof to effectively solve the conventional problems.
本發明之主要目的在提供一種白光發光二極體結構及其製造方法，其係改變基板之形狀以及在基板外層鍍上反射層，可改變光反射的角度，能均勻激發發光二極體晶片上的螢光粉，使發光二極體可發出均勻的白光。The main object of the present invention is to provide a white light emitting diode structure and a manufacturing method thereof, which are characterized in that the shape of the substrate is changed and a reflective layer is plated on the outer layer of the substrate, the angle of light reflection can be changed, and the light emitting diode wafer can be uniformly excited. The phosphor powder allows the light-emitting diode to emit a uniform white light.
為達上述之目的，本發明提供一種白光發光二極體之製造方法，其係提供一基板，其上設有複數個發光二極體晶片；在發光二極體晶片表面噴塗螢光粉並露出發光二極體晶片之二電極；將發光二極體晶片利用暫時性接著劑黏至於暫時性基板上；研磨基板底部，並以發光二極體為單位，切割基板底部，形成複數凹槽；形成一反射層於基板之表面；將暫時性接著劑與暫時性基板移除；以及利用發光二極體晶片為一單位，利用凹槽分離基板，成為白光發光二極體。In order to achieve the above object, the present invention provides a method for fabricating a white light emitting diode, which is provided with a substrate on which a plurality of light emitting diode chips are disposed; and a phosphor powder is sprayed on the surface of the light emitting diode wafer and exposed. a second electrode of the light-emitting diode chip; the light-emitting diode wafer is adhered to the temporary substrate by using a temporary adhesive; the bottom of the substrate is polished, and the bottom of the substrate is cut in units of the light-emitting diode to form a plurality of grooves; A reflective layer is on the surface of the substrate; the temporary adhesive is removed from the temporary substrate; and the light-emitting diode wafer is used as a unit, and the substrate is separated by the groove to become a white light-emitting diode.
另外，本發明亦提供一種白光發光二極體結構，其係一基板，其兩側各設有一斜面部，且設有一反射層於基板底部斜面部，而基板上設有至少一發光二極體晶片，發光二極體晶片上除了二電極外係有螢光粉佈塗於發光二極體晶片表面。In addition, the present invention also provides a white light emitting diode structure, which is a substrate having a sloped surface on each side thereof, and a reflective layer is disposed on the bottom surface of the substrate, and at least one light emitting diode is disposed on the substrate. On the wafer, the LED chip is coated with a phosphor powder on the surface of the LED chip in addition to the two electrodes.
底下藉由具體實施例詳加說明，當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。The purpose, technical content, features and effects achieved by the present invention will be more readily understood by the detailed description of the embodiments.
本發明係一種白光發光二極體結構及其製造方法，其係改變發光二極體晶片之基板形狀及將基板鍍上反射層改變光線折射方向，可均勻折射光線激發螢光粉，使白光發光二極體發出均勻白光。The invention relates to a white light emitting diode structure and a manufacturing method thereof, which are to change the shape of a substrate of a light emitting diode chip and plate the substrate with a reflective layer to change a light refraction direction, and uniformly refract light to excite the fluorescent powder to make the white light emit light. The diode emits a uniform white light.
白光發光二極體10結構係如第2圖所示，本發明係由一基板12，本實施例係舉例基板12兩側各設有一由底部向上往外之斜面部124，使基板12與斜面部124之角度形成頓角，其中基板12與斜面部124之角度更可為銳角或直角，而基板12表面設有一發光二極體晶片14，發光二極體晶片14除了兩電極142以外之表面係噴塗佈滿螢光粉16，而基板12底部與斜面部124設有一層反射層22，反射層22的材質可為鋁、銀、鉛、鉑、鋁合金、銀合金、鉛合金或鉑合金。第3圖係為本發明之激發發光二極體晶片14上之螢光粉16示意圖，其係施加電壓於二電極142後可點亮發光二極體晶片14，而反射層22可均勻反射發光二極體晶片14所發出之光線，可均勻激發螢光粉16，將光線轉換為白光發光，而螢光粉之顏色與發光二極體之發光色為互補的，利用適當的比例即可形成白光，本實施例之螢光粉16係呈現為黃色，可與本發明之發光二極體晶片14所發出的藍光混光後發出白光。The structure of the white light emitting diode 10 is as shown in FIG. 2, and the present invention is composed of a substrate 12. In this embodiment, the substrate 12 is provided with a slope portion 124 from the bottom to the outside, so that the substrate 12 and the slope portion are provided. The angle of 124 forms a negative angle, wherein the angle between the substrate 12 and the inclined surface portion 124 is more acute or right angle, and the surface of the substrate 12 is provided with a light-emitting diode wafer 14 , and the surface of the light-emitting diode wafer 14 except the two electrodes 142 The phosphor powder 16 is sprayed, and the bottom of the substrate 12 and the slope portion 124 are provided with a reflective layer 22, and the material of the reflective layer 22 may be aluminum, silver, lead, platinum, aluminum alloy, silver alloy, lead alloy or platinum alloy. 3 is a schematic view of the phosphor powder 16 on the excitation light-emitting diode chip 14 of the present invention, which is applied to the two electrodes 142 to illuminate the light-emitting diode wafer 14, and the reflective layer 22 can uniformly reflect light. The light emitted by the diode chip 14 can uniformly excite the phosphor powder 16 to convert the light into white light, and the color of the phosphor powder is complementary to the color of the light emitting diode, and can be formed by using an appropriate ratio. In the white light, the phosphor powder 16 of the present embodiment is yellow in color and can be mixed with the blue light emitted from the light-emitting diode wafer 14 of the present invention to emit white light.
白光發光二極體之製造流程請配合參照第4A圖至第4G圖，首先請參照第4A圖，提供一基板12，其上已製作有複數個發光二極體晶片14；接下來如第4B圖所示，係將螢光粉16噴塗於複數個發光二極體晶片14表面，並露出二電極142；如第4C圖所示，利用暫時性接著劑18將發光二極體晶片14黏接於暫時性基板20上，其中暫時性接著劑18之材質可為銀膠或蠟，而暫時性基板20之材質可為二氧化矽、氧化鋁、氮化鋁、矽或鍺；接下來如第4D圖所示，係將基板12底部研磨減薄，利用晶片切割器或雷射切割基板12，並以每一發光二極體晶片14為單位，在基板12的底部切出複數凹槽122，其中凹槽122可為V型槽，以區隔複數發光二極體晶片14；再請參照第4E圖，係在基板12表面形成一反射層22，其中反射層22之材質可為鋁、銀、鉛、鉑、鋁合金、銀合金、鉛合金或鉑合金。如第4F圖所示，將發光二極體晶片14上之暫時性接著劑18與暫時性基板20移除。最後，以發光二極體晶片14為單位，利用凹槽122分離基板12，以取得複數獨立的白光發光二極體10，如第4G圖所示，可將基板12及其上全部之發光二極體晶片14移至黏貼於藍膜24上，因藍膜24具有延展性，可擴張藍膜24，進而分離基板12與其上發光二極體晶片14，以取得複數個如第2圖所示之獨立的白光發光二極體10。For the manufacturing process of the white light emitting diode, please refer to FIG. 4A to FIG. 4G. First, please refer to FIG. 4A to provide a substrate 12 on which a plurality of light emitting diode chips 14 have been fabricated. Next, as shown in FIG. 4B. As shown in the figure, the phosphor powder 16 is sprayed on the surface of the plurality of LED chips 14 to expose the two electrodes 142; as shown in FIG. 4C, the LEDs 14 are bonded by the temporary adhesive 18. On the temporary substrate 20, the material of the temporary adhesive 18 may be silver glue or wax, and the material of the temporary substrate 20 may be ceria, alumina, aluminum nitride, tantalum or niobium; As shown in FIG. 4D, the bottom of the substrate 12 is ground and thinned, and the substrate 12 is cut by a wafer cutter or laser, and a plurality of grooves 122 are cut out at the bottom of the substrate 12 in units of each of the light-emitting diode wafers 14. The recess 122 may be a V-shaped groove to partition the plurality of LEDs 14; and further, refer to FIG. 4E, a reflective layer 22 is formed on the surface of the substrate 12, wherein the reflective layer 22 may be made of aluminum or silver. , lead, platinum, aluminum alloy, silver alloy, lead alloy or platinum alloy. As shown in FIG. 4F, the temporary adhesive 18 on the light-emitting diode wafer 14 and the temporary substrate 20 are removed. Finally, the substrate 12 is separated by the recess 122 in units of the light-emitting diode wafer 14 to obtain a plurality of independent white light-emitting diodes 10. As shown in FIG. 4G, the substrate 12 and all of the light-emitting diodes thereon can be The polar body wafer 14 is moved to adhere to the blue film 24. Since the blue film 24 has ductility, the blue film 24 can be expanded, and the substrate 12 and the upper LED chip 14 are separated to obtain a plurality of images as shown in FIG. Independent white light emitting diode 10.
鑑此，本發明可達到使白光發光二極體可均勻折射光線，激發發光二極體晶片上之螢光粉，使白光發光二極體可發出均勻白光。In view of the above, the present invention can achieve that the white light emitting diode can uniformly refract light, and the phosphor powder on the light emitting diode chip is excited, so that the white light emitting diode can emit uniform white light.
唯以上所述者，僅為本發明之較佳實施例而已，並非用來限定本發明實施之範圍。故即凡依本發明申請範圍所述之特徵及精神所為之均等變化或修飾，均應包括於本發明之申請專利範圍內。The above is only the preferred embodiment of the present invention and is not intended to limit the scope of the present invention. Therefore, any changes or modifications of the features and spirits of the present invention should be included in the scope of the present invention.
10．．．白光發光二極體10. . . White light emitting diode
12．．．基板12. . . Substrate
14．．．發光二極體晶片14. . . Light-emitting diode chip
16．．．螢光粉16. . . Fluorescent powder
18．．．暫時性黏膠18. . . Temporary adhesive
20．．．暫時性基板20. . . Temporary substrate
22．．．反射層twenty two. . . Reflective layer
24．．．藍膜twenty four. . . Blue film
32．．．基板32. . . Substrate
34．．．發光二極體晶片34. . . Light-emitting diode chip
36．．．螢光粉36. . . Fluorescent powder
122．．．凹槽122. . . Groove
124．．．斜面部124. . . Inclined face
126．．．底部126. . . bottom
142．．．電極142. . . electrode
第1A圖係為習知切割發光二極體晶片示意圖。Figure 1A is a schematic view of a conventional cut light emitting diode wafer.
第1B圖係為習知白光發光二極體結構示意圖。Fig. 1B is a schematic view showing the structure of a conventional white light emitting diode.
第2圖係為本發明之結構示意圖。Figure 2 is a schematic view of the structure of the present invention.
第3圖係為本發明之激發發光二極體晶片上之螢光粉示意圖。Figure 3 is a schematic view of the phosphor powder on the excitation light-emitting diode wafer of the present invention.
第4A圖係為本發明之發光二極體晶片位於基板上示意圖。Fig. 4A is a schematic view showing the light emitting diode chip of the present invention on a substrate.
第4B圖係為本發明之發光二極體晶片噴塗螢光粉示意圖。Fig. 4B is a schematic view showing the phosphor powder sprayed on the light-emitting diode of the present invention.
第4C圖係為本發明之覆蓋暫時性接著劑及暫時性基板之示意圖。Figure 4C is a schematic view of the present invention covering a temporary adhesive and a temporary substrate.
第4D圖係為本發明之切割基板示意圖。4D is a schematic view of the cutting substrate of the present invention.
第4E圖係為本發明之形成反射層示意圖。Fig. 4E is a schematic view showing the formation of a reflective layer of the present invention.
第4F圖係為本發明之移除暫時性接著劑及暫時性基板之示意圖。Figure 4F is a schematic illustration of the removal of a temporary adhesive and a temporary substrate of the present invention.
第4G圖係為本發明之分離發光二極體晶片示意圖。Figure 4G is a schematic view of a separate light-emitting diode wafer of the present invention.
10．．．白光發光二極體10. . . White light emitting diode
12．．．基板12. . . Substrate
14．．．發光二極體晶片14. . . Light-emitting diode chip
16．．．螢光粉16. . . Fluorescent powder
22．．．反射層twenty two. . . Reflective layer
124．．．斜面部124. . . Inclined face
126．．．底部126. . . bottom
142．．．電極142. . . electrode
Claims (12)
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| TW100128374A TWI433360B (en) | 2011-08-09 | 2011-08-09 | White light emitting diode structure and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100128374A TWI433360B (en) | 2011-08-09 | 2011-08-09 | White light emitting diode structure and manufacturing method thereof |
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| TW201308694A TW201308694A (en) | 2013-02-16 |
| TWI433360B true TWI433360B (en) | 2014-04-01 |
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| TWI527263B (en) | 2013-07-17 | 2016-03-21 | 新世紀光電股份有限公司 | Light emitting diode structure |
| CN108538984B (en) * | 2013-08-01 | 2020-10-09 | 新世纪光电股份有限公司 | Light emitting diode structure |
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