CN106486387A - 焊接半导体元件的焊接机、其操作方法和改进其uph的方法 - Google Patents
焊接半导体元件的焊接机、其操作方法和改进其uph的方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 156
- 238000000034 method Methods 0.000 title claims abstract description 54
- 238000003466 welding Methods 0.000 title claims description 27
- 238000005476 soldering Methods 0.000 claims abstract description 92
- 238000001816 cooling Methods 0.000 claims description 33
- 238000010438 heat treatment Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 230000006835 compression Effects 0.000 claims description 11
- 238000007906 compression Methods 0.000 claims description 11
- 239000010408 film Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000009329 sexual behaviour Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- H01L2224/75253—Means for applying energy, e.g. heating means adapted for localised heating
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- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
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- H01L2224/75501—Cooling means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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- H01L2224/75801—Lower part of the bonding apparatus, e.g. XY table
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- H01L2224/758—Means for moving parts
- H01L2224/75821—Upper part of the bonding apparatus, i.e. bonding head
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Abstract
提供了一种操作焊接机的方法。该方法包括步骤:(a)利用转移工具承载半导体元件;以及b)将所述半导体元件从所述转移工具转移到所述焊接机的焊接工具,其中所述转移工具和所述焊接工具不同时接触所述半导体元件。
Description
相关申请的交叉引用
本申请要求2015年8月31日递交的美国临时专利申请No.62/212,481的优选权,其全文结合在此引作参考。
技术领域
本发明涉及半导体封装中的电互连的形成,并且更具体地说涉及改进的焊接机及其操作方法。
背景技术
在半导体封装工业中,热压焊接(TCB)包括较慢地被采用的倒装芯片工艺,并且如果这种工艺的生产率不能提高,这种工艺就不会广泛地得以采用。半导体芯片的传统毛细流动底部填充在某些器件(例如,多于4层的器件)上认为无法实现。为了在管芯堆叠过程中底部填充半导体管芯,可以使用“非导电膜”(NCF)。用于NCF的其它常用名是“底部填充膜”(UF)或“晶片应用的底部填充膜”(WAUF)。使用该材料的挑战在于该膜往往在相对低的温度下变“粘”。一旦该膜变粘,从转移工具(例如,拾取器或拾取工具)到放置/焊接工具的管芯移送往往变得不可靠。为了避免这种移送问题,可取的是,移送过程中的膜温度处于充分低于膜开始变粘的温度下,同时膜与转移工具保持接触;然而,这种低温需要大的加热和冷却斜坡,这需要时间和能量。
因此,期望提供改进的焊接机和操作该焊接机的方法。
发明内容
根据本发明的示例性实施例,提供了一种操作焊接机(例如,可以包括或可以不包括已加热的热压焊接工具的热压焊接机)的方法。所述方法包括步骤:(a)利用转移工具承载半导体元件;以及b)将所述半导体元件从所述转移工具转移到所述焊接机的焊接工具,其中所述转移工具和所述焊接工具不同时接触所述半导体元件。
根据本发明的另一示例性实施例,提供了一种焊接机(例如,可以包括或可以不包括已加热的热压焊接工具的热压焊接机)。所述焊接机包括:焊接工具,其用于将半导体元件焊接到基板上;转移工具,其用于在所述半导体元件被焊接到所述基板上之前将所述半导体元件转移到所述焊接工具上;以及限定间隙的工具,其用于在将半导体元件转移到焊接工具期间在(a)焊接工具的接触面与(b)转移工具的接触面之间提供预定间隙。
根据本发明的又另一示例性实施例,提供了一种操作焊接机(例如,可以包括或可以不包括已加热的热压焊接工具的热压焊接机)的方法。所述包括步骤:(a)利用转移工具承载半导体元件;(b)在(i)半导体元件的接触面与(ii)焊接工具的接触面之间提供预定间隙,所述预定间隙由所述焊接机的限定间隙的工具提供;以及(c)在步骤(b)之后将所述半导体元件从所述转移工具转移到所述焊接机的焊接工具。
根据本发明的又另一示例性实施例,提供了一种焊接机(例如,可以包括或可以不包括已加热的热压焊接工具的热压焊接机)。所述焊接机包括:焊接工具,其用于将半导体元件焊接到基板上;以及转移工具,其用于在所述半导体元件焊接到所述基板之前将所述半导体元件转移到所述焊接工具。所述转移工具包括用于冷却所述转移工具的接触面的冷却系统。
根据本发明的又另一示例性实施例,提供了一种操作焊接机(例如,可以包括或可以不包括已加热的热压焊接工具的热压焊接机)的方法。所述包括步骤:(a)利用转移工具承载半导体元件,所述转移工具包括用于冷却所述转移工具的接触面的冷却系统;以及(b)在步骤(a)之后将所述半导体元件从所述转移工具转移到所述焊接机的焊接工具。
附图说明
本发明从结合附图阅读的以下详细说明中将更佳地得到理解。强调的是,根据通常实践,附图的各个特征并不是成比例的。相反,各个特征的尺寸为了清楚而任意地增大或减小。在附图中:
图1A-1E是示出传统的半导体元件转移过程的方块图,其中半导体元件从转移工具转移到焊接工具;
图2A-2E是示出根据本发明示例性实施例的半导体元件转移过程的方块图,其中半导体元件从转移工具转移到焊接工具;
图3A-3B是根据本发明示例性实施例的焊接机的元件的方块图;
图4A-4B是根据本发明示例性实施例的另一焊接机的元件的方块图;以及
图5A-5B是根据本发明示例性实施例的又另一焊接机的元件的方块图。
具体实施方式
正如在此所用,术语“半导体元件”意为指的是包含(或被构造成在随后的步骤包含)半导体芯片或管芯的任何结构。示意性半导体元件包括裸半导体管芯、基板(例如,引线框架、PCB、载体、半导体芯片、半导体晶片、BGA基板、半导体元件等)上的半导体管芯、封装好的半导体器件、倒装芯片半导体器件、嵌入在基板内的管芯、半导体管芯的堆栈等等。此外,半导体元件可以包括被构造成在半导体封装内焊接或以其它方式包含的元件(例如,插入器、将被焊接在堆叠的管芯结构中的隔块、基板等)。
正如在此所用,术语“基板”以及“工件”意为指的是半导体元件可以被焊接(例如,被热压焊接、被倒装芯片焊接等)至的任何结构。示意性基板例如包括引线框架、PCB、载体、半导体芯片、半导体晶片、BGA基板、半导体元件等。
根据本发明的一些示例性实施例,转移过程(即,从焊接机的转移工具到焊接机的焊接工具的转移)可以通过利用非粘性的转移/拾取工具(例如,具有用于接触由非粘性材料形成的半导体元件的接触面的转移/拾取工具)得以改进。非粘性的转移/拾取工具能够实现高温移送,因为NCF膜较少附着到转移/拾取工具上。NCF膜能够使用新材料,因为该膜将充当(i)较硬的低粘性材料和(ii)另一侧上的支柱硅管芯之间的衬垫。用于低粘性转移/拾取工具的材料实例(例如,具有由非粘性材料形成的接触面)是材料、涂层橡胶(例如,聚对二甲苯)等。
此外,低力量移送过程可以用来减少膜(例如,NCF)变形,从而最小化接触面积以及对转移/拾取工具的机械附着性。在本发明的一些实施例中,可以通过在从转移工具到焊接工具的转移过程中在管芯/膜叠层中形成大的热梯度而从膜(例如,NCF)去除热能。在具体应用中,已加热的焊接工具接触半导体元件(例如,硅管芯),同时冷却的转移/拾取工具接触NCF膜。
根据本发明的一些示例性实施例,可以使用高热传导转移/拾取工具。此外,可以使用主动冷却的转移/拾取工具。
根据本发明的其它示例性实施例,可以在半导体元件与转移/拾取工具和焊接/放置工具两者之间不同时接触的情况下发生半导体元件(例如,管芯)的移送。
使用这些方法,实现了显著的UPH改进。可取的是,本发明允许在较高的焊接头温度的情况下实现半导体元件的移送/转移。
因此,在本发明的一些方面,非粘性(例如,特氟纶)转移/拾取工具材料例如与“低力量”、“时间优化”的移送过程组合地被用于管芯转移/拾取。
在其它方面,半导体元件以非接触的管芯移送被转移到已加热的焊接/放置工具。
高温下的移送/转移需要不太大的加热和冷却斜坡,从而显著增大了焊接机的UPH。
现在参考附图,图1A-1E示出了传统焊接机的元件以及用于在转移工具108和焊接工具102之间转移半导体元件110的传统转移操作。在图1A示出的视图之前,半导体元件110(例如,半导体管芯)已经被从供应源(例如,半导体晶片)拾取,在供给源,可以通过转移工具108或者通过单独的拾取工具(并且然后转移到转移工具108)拾取半导体元件110。在任何情况下,在图1A中,半导体元件110由转移工具108利用真空等保持住。更具体地说,转移工具108(其由焊接机的结构106承载)限定空气/真空通道108a。利用经由通道108a的真空压力(如图1A中的向下箭头所示),半导体元件110被保持到转移工具108的接触面108a1上。限定了空气/真空通道102a的焊接工具102由焊接头组件100(其限定空气/真空通道100a,并且包括阀104)承载。
在图1B中,焊接工具102和转移工具108中的至少一个移动,使得焊接工具102的接触面102a1与半导体元件110的侧面接触。更具体地说,在图1B中,转移工具108的接触面108a1与半导体元件110的第一侧接触,并且焊接工具102的接触面102a1与半导体元件110的第二侧(与半导体元件110的第一侧相反)接触。在图1B中,由于阀104一直处于关闭,所以没有真空压力经由通道102a被抽吸。
在图1C中,阀104打开,因此真空压力经由通道102a被抽吸(参见指向上的箭头)。在图1D中,真空已经被从通道108a去除,并且实际上被正的空气压力代替(参见从图1C到图1D方向已改变的箭头)。在图1D中,图1C中经由通道102a所施加的真空仍存在。此外,在图1D中,相对运动出现了,以便将转移工具108与半导体元件110分离,这在图1E所示的视图中完成。图1E还示出了闭合的阀112,其将通过转移工具108的通道108a的空气/真空切断。在图1E中,焊接工具102现在可以用来将半导体元件110运送到用于随后焊接的焊接位置。虽然图1A-1E所示的过程本质上是传统的,但是也可以应用于下文描述的本发明的各方面。
与图1A-1E相比,图2A-2E示出了创造性转移操作(例如,在热压焊接机、倒装芯片焊接机等上的转移操作)的元件。如本领域技术人员所理解的,半导体元件(例如管芯)的转移可以从拾取工具到焊接工具,其中拾取工具从半导体元件源(例如晶片)拾取半导体元件。在另一实例中,半导体元件的转移可以从中间转移工具(非拾取工具)到焊接工具。因此,转移工具可以是拾取工具或另一转移工具,但是在任何情况下,转移工具将半导体元件转移到焊接工具(例如,已加热的焊接工具)。
图2A-2E示出了与图1A-1E相比不同的过程,因为半导体元件210横跨一间隙被转移(例如,参见图2D,其中半导体元件210正被转移而不同时与转移工具208和焊接工具202两者接触)。在图2A示出的视图之前,半导体元件210已经被从供应源拾取,在供给源可以通过转移工具208或者通过单独的拾取工具(并且然后转移到转移工具208)拾取半导体元件210。在任何情况下,在图2A中,半导体元件210由转移工具208利用真空等保持住。更具体地说,转移工具208(其由焊接机的结构206承载)限定空气/真空通道208a。利用经由通道208a的真空压力(如图2A中的向下箭头所示),半导体元件210被保持到转移工具208的接触面208a1上。限定了空气/真空通道202a的焊接工具202由焊接头组件200(其限定空气/真空通道200a,并且包括阀204)承载。
在焊接机上,焊接工具202和转移工具208中的每一个可以具有用于在一个或更多个方向上移动各自工具的不同运动系统。这些运动系统可以直接移动工具,或者通过相关结构(例如,承载焊接工具202的焊接头200、承载转移工具208的结构206等)移动工具。在图2B中,至少一个焊接工具202和转移工具208利用其相应运动系统移动(与图2A的位置相比),使得焊接工具202的接触面202a1紧密靠近半导体元件210的侧面。更具体地说,在图2B中,转移工具208的接触面208a1与半导体元件210的第一侧接触,并且焊接工具202的接触面202a1与半导体元件210的第二侧(与半导体元件210的第一侧相反)紧密靠近(但是不接触)。在图2B中,由于阀204一直处于关闭,所以没有真空压力经由通道202a被抽吸。
在图2C中,阀204打开,因此真空压力经由通道202a被抽吸(如指向上的箭头所示)。在图2D中,真空已经被从通道208a去除,并且实际上被正的空气压力代替(参见从图2C到图2D方向已改变的箭头)。在图2D中,图2C中经由通道202a所施加的真空仍存在。此外,在图2D中,半导体元件210被经由通道202a抽吸的真空压力所抽吸,以横跨(i)焊接工具202的接触面202a1与(ii)转移工具208的接触面208a1之间的间隙。也就是说,半导体元件从转移工具208转移到焊接工具202。该转移可以利用图2D中所存在的经由通道208a提供的正空气压力进行辅助。在图2E中,转移现在完成了,并且半导体元件210由焊接工具202承载。图2E还示出了闭合的阀212,其将通过转移工具208的通道208a的空气/真空切断。在图2E之后,焊接工具202现在可以用来将半导体元件210运送到用于随后焊接的焊接位置。
当然,在本发明的范围内存在对图2A-2E所示的真空/空气压力时序的改变。在一个具体实例中,例如,真空压力可以在图2C显示的时间前经由焊接工具202上的通道202a抽吸,以增大机械操作的UPH(每小时的产出)。
在本发明的在(i)半导体元件的接触面与(ii)焊接工具的接触面之间存在“间隙”的实施例中,可以设想各种方法用于设置该间隙。该“间隙”还可以设置在(i)转移工具的接触面与(ii)焊接工具的接触面之间。在一些示例性构造中,可以提供机械机构来设置间隙。图3A-3B和图4A-4B示出了这种机械机构的实例。
在图3A中,转移工具308(其可以是拾取工具)由结构306承载,其中结构306由焊接机(焊接机包括半导体元件供应源320、由运动系统/臂324承载的结构306、转移工具308、焊接头300,以及为简化起见未示出的其它元件)的运动系统(例如,包括臂324)承载。在图3A中,运动系统(包括臂324)承载转移/拾取工具308,以从供应源320拾取半导体元件322(例如,半导体管芯),随后移动(例如,翻转)使得半导体元件322面向由焊接头300承载的焊接工具302。结构306包括移动构件326(诸如活塞),其在腔室328内在缩回位置(诸如图3A所示)和伸展位置(诸如图3B所示)之间移动。移动构件326包括用来设置如图3B所示间隙的销326a,从而允许半导体元件322从转移工具308到焊接工具302的无接触式转移。更具体地说,在从供应源320拾取半导体元件322之后,转移工具308被移动(包括图3A中的旋转箭头所示旋转或翻转运动),使得“被拾取的”半导体元件322面向焊接工具302(如图3B所示)。销326a用来在(i)半导体元件322的接触面与(ii)焊接工具302的接触面之间设置“间隙”。在如图3B所示“间隙”被设置之后,半导体元件322的转移可以例如利用图2A-2E所示的方法来完成。具体地说,焊接工具302可以具有像焊接工具202那样的结构,并且转移工具308可以具有像转移工具208那样的结构,如图2A-2E所示。
虽然图3A-3B示出了与结构306(或结构308的另一部分)成一体的限定间隙的工具(移动构件326),但是可以认识到这种限定间隙的工具可以与焊接工具302(或焊接头300的另一部分)成一体。
在图4A-4B中,示出了固定到焊接机的结构部件430上的间隔件432。转移工具408(其可以是拾取工具)由结构406承载,其中结构406由焊接机(焊接机还包括半导体元件供应源420、由运动系统/臂424承载的结构406、转移工具408、焊接头400,以及为简化起见未示出的其它元件)的运动系统(例如,包括臂424)承载。在图4A中,运动系统(包括臂424)承载转移/拾取工具408,以从供应源420拾取半导体元件422(例如,半导体管芯),随后移动(例如,翻转)使得半导体元件422面向由焊接头400承载的焊接工具402。间隔件432定位在焊接工具402与转移工具408之间,并且用来在(i)半导体元件422的接触面与(ii)焊接工具402的接触面之间设置“间隙”。转移工具408和焊接工具402利用间隔件432对齐(参见图4B),以设置间隙用于半导体元件422从转移工具408到焊接工具402的无接触式转移。在如图4B所示“间隙”被设置之后,半导体元件422的转移可以例如利用图2A-2E所示的方法来完成。具体地说,焊接工具402可以具有像焊接工具202那样的结构,并且转移工具408可以具有像转移工具208那样的结构,如图2A-2E所示(例如,焊接机的臂)。
与使用机械机构来设置间隙(诸如图3A-3B和图4A-4B所示)相比,其它示例性方法涉及将转移/拾取工具和/或焊接/放置工具驱动到在转移期间不同时触碰半导体元件(例如,管芯)的位置。更具体地说,可取的是,在将管芯从转移工具转移到焊接工具期间,转移工具和焊接工具不同时与半导体元件接触。可取的是,这些运动系统利用知道工具在哪里的方法被构造。示例性选择是:(i)在转移工具和焊接工具(例如,图2A-2E中的转移工具208和焊接工具202)的至少一个上的可以判断它们之间距离的传感器,诸如光学传感器和电容传感器(这些传感器在图2A-2E中不可见);(ii)校准运动系统以便知道在哪里它们需要驱动从而具有期望的间隙。
用于选择(ii)的实例包括:(a)在非焊接模式下,驱动转移工具和焊接工具知道它们触碰,记录这些位置,然后在焊接模式期间移动到小于期望间隙加上已知管芯厚度的位置;(b)利用拾取工具或放置工具,拾取已知厚度的校准件,驱动它们触碰,记住该位置,然后利用该信息来计算产生期望间隙的位置;以及(c)在焊接模式下,通过接触来拾取并转移半导体元件(例如,管芯),但是在NCF不软化或发粘的温度下,然后记住用于该接触转移的位置,然后在未来转移中使用留下间隙的位置,然后允许更高温度。当然,其它方法被设想到。
本领域技术人员将认识到,前述校准的任一种(以及在本发明范围内的其它校准)可以按一定间隔(例如,诸如预定时间间隔、焊接操作的预定次数等的预定间隔)重复。
根据本发明的横跨一间隙在(i)半导体元件的接触面与(ii)焊接工具的接触面之间转移半导体元件的实施例,用于间隙的示例性范围是:1-500微米;5-500微米;15-400微米;30-300微米以及10-100微米。
图5A-5B示出了焊接机的元件,其中转移机构包括用于冷却转移工具508的冷却系统550。转移工具508(其可以是拾取工具)由焊接机的包括运动系统(例如,包括臂524)的结构506承载(焊接机还包括半导体元件供应源520、包括转移工具508的运动系统/臂、焊接头500,以及为简化起见未示出的其它元件)。在图5A中,运动系统(包括臂524)承载转移/拾取工具508,以从供应源520拾取半导体元件522(例如,半导体管芯),随后移动(例如,翻转)使得半导体元件522面向由焊接头500承载的焊接工具502,如图5B所示。半导体元件522的转移可以用传统方式(如图1A-1E所示)或者横跨间隙(如图2A-2E所示)来完成。也就是说,“被冷却的”转移工具508可以用在传统接触转移中(如图1A-1E所示)或者用在创造性非接触转移(如图2A-2E所示)中。例如,转移工具508可以利用经由冷却系统550提供的冷却空气来冷却(例如经由转移工具506中的冷却通道所分散),以便冷却转移工具508的接触面。在另一实例中,转移工具508可以利用冷却系统550的热电冷却器来冷却,以便冷却转移工具508的接触面。在转移时利用冷却系统550用于转移/拾取工具的示例性温度范围是:-30至+20摄氏度;-20至+15摄氏度;以及-15至+10摄氏度。因此,本领域技术人员将认识到,冷却系统550可以采用多种形式,包括但不限于强制的基于空气的冷却系统、热电冷却系统、被动空气冷却,等等。
利用本文公开的一些方法,转移时半导体元件(例如,管芯)的温度可以被增加。在半导体元件从转移工具转移到焊接工具时半导体元件的示例性温度范围是:100-160摄氏度;115-160摄氏度;以及130-160摄氏度。
因此,本发明的各方面涉及用于在较高的焊接工具温度下转移半导体元件的方法和机构,其中NCF将在标准的转移条件下变形。传统管芯转移涉及在转移过程的力和时间下不变形的NCF。转移时的示例力为大约0.5N至大约10N,转移的示例时间为大约10至300ms。在这些条件下,可取的是,传统上NCF保持在不发生变形的温度下。
如本文所提供的,在较高的焊接头温度下实现转移的方法包括:(1)横跨一间隙转移管芯,使得薄膜在开始与焊接工具接触时不与转移/拾取工具接触——在这些条件下NCF在焊接工具的温度下会较软,但是不会发生变形,这是因为没有力施加在转移/拾取工具上;(2)建立机构和方法,使得尽管焊接工具处于NCF将会较软的温度下,但是从焊接工具到管芯再到NCF存在显著的温度梯度——例如,与NCF接触的转移/拾取工具可以被冷却,使得在会使NCF通常较软的温度下焊接工具与管芯的相反部位接触时,NCF保持足够硬。
NCF可以视为较软(变形):(1)如果粘度小于大约50,000泊;(2)如果粘度小于大约30,000泊;(3)如果粘度小于大约20,000泊。当然,这些数字实际上是示例性的,并且可以改变。根据本发明的各方面,半导体元件可以在焊接工具温度下被转移,在焊接工具温度下,如果NCF达到焊接头温度则NCF通常会较软,但是例如因为横跨间隙的转移或者被冷却的转移工具所以NCF不会达到焊接头温度。
尽管本发明参照特定的实施例被示出并被描述,但是本发明不旨在被限制于所示的细节。实际上,各种变型可以在权利要求书的范围和范畴内并且在不脱离本发明的前提下在细节方面被实现。
Claims (34)
1.一种操作焊接机的方法,所述方法包括步骤:
(a)利用转移工具承载半导体元件;以及
(b)将所述半导体元件从所述转移工具转移到所述焊接机的焊接工具,其中所述转移工具和所述焊接工具不同时接触所述半导体元件。
2.根据权利要求1所述的方法,其中,所述焊接机是热压焊接机,并且所述焊接工具是已加热的热压焊接工具。
3.根据权利要求1所述的方法,其中,步骤(b)包括横跨(i)所述半导体元件的接触面与(ii)所述焊接工具的接触面之间的间隙转移所述半导体元件。
4.根据权利要求3所述的方法,其中,所述间隙在1-500微米之间。
5.根据权利要求1所述的方法,其中,所述转移工具是用来在步骤(a)之前从半导体元件源拾取所述半导体元件的拾取工具。
6.根据权利要求1所述的方法,其中,所述半导体元件包括位于所述半导体元件的第一侧上的非导电膜,所述半导体元件的第一侧在步骤(a)中与所述转移工具的接触面接触。
7.根据权利要求1所述的方法,其中,步骤(b)包括在转移步骤中在所述焊接工具上提供真空。
8.根据权利要求7所述的方法,其中,步骤(b)包括在转移步骤中提供从所述转移工具朝向所述焊接工具的正空气供应。
9.一种焊接机,包括:
焊接工具,其用于将半导体元件焊接到基板上;
转移工具,其用于在所述半导体元件被焊接到所述基板上之前将所述半导体元件转移到所述焊接工具上;以及
限定间隙的工具,其用于在将半导体元件转移到焊接工具期间在(a)焊接工具的接触面与(b)转移工具的接触面之间提供预定间隙。
10.根据权利要求9所述的焊接机,其中,所述焊接机是热压焊接机,并且所述焊接工具是已加热的热压焊接工具。
11.根据权利要求9所述的焊接机,其中,所述预定间隙在1-500微米之间。
12.根据权利要求9所述的焊接机,其中,所述限定间隙的工具与所述转移工具和所述焊接工具中的至少一个成一体。
13.根据权利要求9所述的焊接机,还包括半导体元件源,其中所述转移工具是用来从半导体元件源拾取所述半导体元件的拾取工具。
14.根据权利要求9所述的焊接机,其中,所述半导体元件包括位于所述半导体元件的第一侧上的非导电膜,所述半导体元件的第一侧在半导体元件转移到焊接工具之前与所述转移工具的接触面接触。
15.一种操作焊接机的方法,所述方法包括步骤:
(a)利用转移工具承载半导体元件;
(b)在(i)半导体元件的接触面与(ii)焊接工具的接触面之间提供预定间隙,所述预定间隙由所述焊接机的限定间隙的工具提供;以及
(c)在步骤(b)之后将所述半导体元件从所述转移工具转移到所述焊接机的焊接工具。
16.根据权利要求15所述的方法,其中,所述焊接机是热压焊接机,并且所述焊接工具是已加热的热压焊接工具。
17.根据权利要求15所述的方法,其中,所述预定间隙在1-500微米之间。
18.根据权利要求15所述的方法,其中,所述转移工具是用来在步骤(a)之前从半导体元件源拾取所述半导体元件的拾取工具。
19.根据权利要求15所述的方法,其中,所述半导体元件包括位于所述半导体元件的第一侧上的非导电膜,所述半导体元件的第一侧在步骤(a)中与所述转移工具的接触面接触。
20.根据权利要求15所述的方法,其中,步骤(c)包括在转移步骤中在所述焊接工具上提供真空。
21.根据权利要求20所述的方法,其中,步骤(c)包括在转移步骤中提供从所述转移工具朝向所述焊接工具的正空气供应。
22.根据权利要求15所述的方法,其中,所述限定间隙的工具与所述转移工具和所述焊接工具中的至少一个成一体。
23.一种焊接机,包括:
焊接工具,其用于将半导体元件焊接到基板上;以及
转移工具,其用于在所述半导体元件焊接到所述基板之前将所述半导体元件转移到所述焊接工具,所述转移工具包括用于冷却所述转移工具的接触面的冷却系统。
24.根据权利要求23所述的焊接机,其中,所述焊接机是热压焊接机,并且所述焊接工具是已加热的热压焊接工具。
25.根据权利要求23所述的焊接机,还包括半导体元件源,其中所述转移工具是用来从半导体元件源拾取所述半导体元件的拾取工具。
26.根据权利要求23所述的焊接机,其中,所述半导体元件包括位于所述半导体元件的第一侧上的非导电膜,所述半导体元件的第一侧在半导体元件转移到焊接工具之前与所述转移工具的接触面接触。
27.根据权利要求23所述的焊接机,其中,所述冷却系统包括用于冷却所述转移工具的接触面的冷却空气。
28.根据权利要求23所述的焊接机,其中,所述冷却系统包括热电冷却器。
29.一种操作焊接机的方法,所述方法包括步骤:
(a)利用转移工具承载半导体元件,所述转移工具包括用于冷却所述转移工具的接触面的冷却系统;以及
(b)在步骤(a)之后将所述半导体元件从所述转移工具转移到所述焊接机的焊接工具。
30.根据权利要求29所述的方法,其中,所述焊接机是热压焊接机,并且所述焊接工具是已加热的热压焊接工具。
31.根据权利要求29所述的方法,其中,所述转移工具是用来在步骤(a)之前从半导体元件源拾取所述半导体元件的拾取工具。
32.根据权利要求29所述的方法,其中,所述半导体元件包括位于所述半导体元件的第一侧上的非导电膜,所述半导体元件的第一侧在步骤(a)中与所述转移工具的接触面接触。
33.根据权利要求29所述的焊接机,其中,所述冷却系统包括用于冷却所述转移工具的接触面的冷却空气。
34.根据权利要求29所述的焊接机,其中,所述冷却系统包括热电冷却器。
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KR102365660B1 (ko) * | 2019-08-27 | 2022-02-18 | 세메스 주식회사 | 다이 픽업 모듈 및 이를 포함하는 다이 본딩 장치 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0766268A (ja) * | 1993-08-20 | 1995-03-10 | Sony Corp | 半導体チップの吸着装置 |
CN1131077A (zh) * | 1995-03-15 | 1996-09-18 | 石川岛播磨重工业株式会社 | 轧材接合方法及接合装置 |
JPH11354587A (ja) * | 1998-06-08 | 1999-12-24 | Toyo Commun Equip Co Ltd | 発振器のフリップチップ実装方法 |
US20070085223A1 (en) * | 2004-09-15 | 2007-04-19 | Chunghwa Picture Tubes, Ltd. | Mechanism and process for compressing chips |
CN101811223A (zh) * | 2010-04-14 | 2010-08-25 | 宁波江丰电子材料有限公司 | 靶材组件焊接方法 |
JP2011044462A (ja) * | 2009-08-19 | 2011-03-03 | Elpida Memory Inc | 搬送装置及び搬送方法 |
CN103996641A (zh) * | 2011-09-06 | 2014-08-20 | 精工爱普生株式会社 | 分选机以及部件检查装置 |
CN104708157A (zh) * | 2013-12-17 | 2015-06-17 | 库利克和索夫工业公司 | 用于焊接半导体元件的焊接机的操作方法和焊接机 |
CN104871300A (zh) * | 2013-05-23 | 2015-08-26 | 株式会社新川 | 电子零件安装装置以及电子零件的制造方法 |
Family Cites Families (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4029351A (en) * | 1976-06-02 | 1977-06-14 | International Business Machines Corporation | Bernoulli pickup head with self-restoring anti-tilt improvement |
US5169196A (en) * | 1991-06-17 | 1992-12-08 | Safabakhsh Ali R | Non-contact pick-up head |
TW277139B (zh) * | 1993-09-16 | 1996-06-01 | Hitachi Seisakusyo Kk | |
US5651495A (en) * | 1993-12-14 | 1997-07-29 | Hughes Aircraft Company | Thermoelectric cooler assisted soldering |
JPH07176569A (ja) * | 1993-12-17 | 1995-07-14 | Nec Corp | フリップチップボンダ |
KR100236487B1 (ko) * | 1997-10-22 | 2000-01-15 | 윤종용 | 정전기 방전 불량을 방지하기 위한 분할형 칩 흡착수단을구비하는 칩 접착 장치 |
JP3176580B2 (ja) * | 1998-04-09 | 2001-06-18 | 太陽誘電株式会社 | 電子部品の実装方法及び実装装置 |
DE10042661B4 (de) * | 1999-09-10 | 2006-04-13 | Esec Trading S.A. | Verfahren und Vorrichtungen für die Montage von Halbleiterchips |
JP2002353081A (ja) * | 2001-05-25 | 2002-12-06 | Canon Inc | 板部材の分離装置及び分離方法 |
JP4530688B2 (ja) * | 2004-03-04 | 2010-08-25 | オリンパス株式会社 | 半導体接合方法及び接合装置 |
CN1969400B (zh) * | 2004-06-22 | 2010-05-05 | 阿鲁策株式会社 | 热电装置 |
JP4643185B2 (ja) * | 2004-07-05 | 2011-03-02 | リンテック株式会社 | 移載装置 |
US7207430B2 (en) * | 2004-10-25 | 2007-04-24 | Ui Holding Company | Vacuum gripper for handling small components |
US7611322B2 (en) * | 2004-11-18 | 2009-11-03 | Intevac, Inc. | Processing thin wafers |
JP4401322B2 (ja) * | 2005-04-18 | 2010-01-20 | 日東電工株式会社 | 支持板分離装置およびこれを用いた支持板分離方法 |
JP4739900B2 (ja) * | 2005-10-13 | 2011-08-03 | リンテック株式会社 | 転着装置及び転着方法 |
WO2007066559A1 (ja) * | 2005-12-06 | 2007-06-14 | Toray Engineering Co., Ltd. | チップ実装装置およびチップ実装方法 |
JP4642787B2 (ja) * | 2006-05-09 | 2011-03-02 | 東京エレクトロン株式会社 | 基板搬送装置及び縦型熱処理装置 |
US20080164606A1 (en) * | 2007-01-08 | 2008-07-10 | Christoffer Graae Greisen | Spacers for wafer bonding |
JP4958655B2 (ja) * | 2007-06-27 | 2012-06-20 | 新光電気工業株式会社 | 電子部品実装装置および電子装置の製造方法 |
JP5167779B2 (ja) * | 2007-11-16 | 2013-03-21 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US8118940B2 (en) * | 2008-02-07 | 2012-02-21 | Asm Japan K.K. | Clamping mechanism for semiconductor device |
JP4311582B1 (ja) * | 2008-04-07 | 2009-08-12 | 株式会社アドウェルズ | 共振器の支持装置 |
EP2290678A1 (en) * | 2008-06-20 | 2011-03-02 | Canon Anelva Corporation | Vacuum processing apparatus, vacuum processing method, and electronic device manufacturing method |
US20100078125A1 (en) * | 2008-10-01 | 2010-04-01 | Kabushiki Kaisha Shinkawa | Method for securing a curved circuit board in die bonder and recording medium containing program for securing a curved circuit board in die bonder |
EP2402985A4 (en) * | 2009-02-27 | 2014-01-22 | Sony Chem & Inf Device Corp | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE |
JP4397429B1 (ja) * | 2009-03-05 | 2010-01-13 | 株式会社新川 | 半導体ダイのピックアップ装置及びピックアップ方法 |
US8970820B2 (en) * | 2009-05-20 | 2015-03-03 | Nikon Corporation | Object exchange method, exposure method, carrier system, exposure apparatus, and device manufacturing method |
KR101562021B1 (ko) * | 2009-08-11 | 2015-10-20 | 삼성전자주식회사 | 반도체 칩 부착 장치 및 반도체 칩 부착 방법 |
JP5732631B2 (ja) * | 2009-09-18 | 2015-06-10 | ボンドテック株式会社 | 接合装置および接合方法 |
DE102009059936A1 (de) * | 2009-12-22 | 2011-06-30 | Strama-MPS Maschinenbau GmbH & Co. KG, 94315 | Greifer zur nahezu berührungslosen Aufnahme von flächigen Bauteilen wie siliziumbasierte Wafer |
JP2011151179A (ja) * | 2010-01-21 | 2011-08-04 | Shibuya Kogyo Co Ltd | ボンディング装置 |
JP5580163B2 (ja) * | 2010-10-13 | 2014-08-27 | 東レエンジニアリング株式会社 | 実装装置の平行度調整方法および平行度調整装置 |
JP5890960B2 (ja) | 2011-02-21 | 2016-03-22 | 積水化学工業株式会社 | フリップチップ実装方法 |
JP5740578B2 (ja) * | 2011-04-12 | 2015-06-24 | 東京エレクトロン株式会社 | 剥離方法、プログラム、コンピュータ記憶媒体、剥離装置及び剥離システム |
US8841540B2 (en) * | 2011-08-03 | 2014-09-23 | Marlow Industries, Inc. | High temperature thermoelectrics |
JP5833959B2 (ja) * | 2011-09-28 | 2015-12-16 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP5965185B2 (ja) * | 2012-03-30 | 2016-08-03 | デクセリアルズ株式会社 | 回路接続材料、及びこれを用いた半導体装置の製造方法 |
WO2014035347A1 (en) * | 2012-08-31 | 2014-03-06 | Semiconductor Technologies & Instruments Pte Ltd | System and method for automatically correcting for rotational misalignment of wafers on film frames |
KR102007042B1 (ko) * | 2012-09-19 | 2019-08-02 | 도쿄엘렉트론가부시키가이샤 | 박리 장치 |
KR102169388B1 (ko) * | 2012-11-30 | 2020-10-23 | 가부시키가이샤 니콘 | 흡인 장치, 반입 방법, 반송 시스템 및 노광 장치, 그리고 디바이스 제조 방법 |
WO2014084229A1 (ja) * | 2012-11-30 | 2014-06-05 | 株式会社ニコン | 搬送システム、露光装置、搬送方法、露光方法及びデバイス製造方法、並びに吸引装置 |
CH707378A1 (de) * | 2012-12-21 | 2014-06-30 | Besi Switzerland Ag | Thermokompressionsverfahren und Vorrichtung für die Montage von Halbleiterchips auf einem Substrat. |
KR101603536B1 (ko) * | 2012-12-21 | 2016-03-15 | 가부시키가이샤 신가와 | 플립 칩 본더 및 본딩 스테이지의 평탄도 및 변형량 보정 방법 |
TWI582256B (zh) * | 2013-02-04 | 2017-05-11 | 愛發科股份有限公司 | 薄型基板處理裝置 |
TWI490956B (zh) | 2013-03-12 | 2015-07-01 | Shinkawa Kk | 覆晶接合器以及覆晶接合方法 |
JP6081853B2 (ja) * | 2013-04-18 | 2017-02-15 | ナミックス株式会社 | 熱硬化性樹脂の粘度挙動予測方法及び熱硬化性樹脂の製造方法 |
US9136243B2 (en) * | 2013-12-03 | 2015-09-15 | Kulicke And Soffa Industries, Inc. | Systems and methods for determining and adjusting a level of parallelism related to bonding of semiconductor elements |
JP6435099B2 (ja) * | 2014-02-26 | 2018-12-05 | Juki株式会社 | 電子部品実装装置及び電子部品実装方法 |
US9437468B2 (en) * | 2014-03-29 | 2016-09-06 | Intel Corporation | Heat assisted handling of highly warped substrates post temporary bonding |
KR101600382B1 (ko) * | 2014-05-12 | 2016-03-08 | 제트에스-핸들링 게엠베하 | 비접촉식 기판 그립핑 장치 |
US20150336221A1 (en) * | 2014-05-20 | 2015-11-26 | GM Global Technology Operations LLC | Tool for assembling components and system and method for same |
TWI580511B (zh) * | 2014-06-10 | 2017-05-01 | Shinkawa Kk | A bonding device, and a method of estimating the placement position of the engagement tool |
US9425151B2 (en) * | 2014-06-17 | 2016-08-23 | Apple Inc. | Compliant electrostatic transfer head with spring support layer |
US10388583B2 (en) * | 2014-10-10 | 2019-08-20 | Namics Corporation | Thermosetting resin composition and method of producing same |
US9716073B2 (en) * | 2014-11-19 | 2017-07-25 | Mikro Mesa Technology Co., Ltd. | Machine for transferring micro-device |
US9553010B2 (en) * | 2015-06-25 | 2017-01-24 | Coreflow Ltd. | Wafer gripper with non-contact support platform |
CH711570B1 (de) * | 2015-09-28 | 2019-02-15 | Besi Switzerland Ag | Vorrichtung für die Montage von Bauelementen auf einem Substrat. |
CN105127630B (zh) * | 2015-09-29 | 2017-04-12 | 京东方科技集团股份有限公司 | 对辅助焊接设备的多个压头进行调试的治具及其使用方法 |
TWI783910B (zh) * | 2016-01-15 | 2022-11-21 | 荷蘭商庫力克及索發荷蘭公司 | 放置超小或超薄之離散組件 |
US20170256434A1 (en) * | 2016-03-01 | 2017-09-07 | Veeco Instruments, Inc. | Wafer handling assembly |
US20170256436A1 (en) * | 2016-03-01 | 2017-09-07 | Veeco Instruments, Inc. | Wafer handling assembly |
JP6538596B2 (ja) * | 2016-03-14 | 2019-07-03 | 東芝メモリ株式会社 | 電子部品の製造方法及び電子部品の製造装置 |
KR20180045666A (ko) * | 2016-10-26 | 2018-05-04 | 삼성전자주식회사 | 기판 제조 장치 |
JP6905382B2 (ja) * | 2017-04-14 | 2021-07-21 | 株式会社ディスコ | ウェーハの搬入出方法 |
TW201903937A (zh) * | 2017-04-25 | 2019-01-16 | 美商維克精密表面處理股份有限公司 | 用於半導體晶圓製程系統中的可配置高溫夾盤 |
WO2018200398A1 (en) * | 2017-04-25 | 2018-11-01 | Veeco Precision Surface Processing Llc | Semiconductor wafer processing chamber |
JP7073098B2 (ja) * | 2017-12-27 | 2022-05-23 | 株式会社日立ハイテク | ウエハ処理方法およびウエハ処理装置 |
-
2016
- 2016-08-04 US US15/228,083 patent/US9929121B2/en active Active
- 2016-08-10 TW TW105125446A patent/TWI695449B/zh active
- 2016-08-30 SG SG10202001705VA patent/SG10202001705VA/en unknown
- 2016-08-30 KR KR1020160110626A patent/KR20170026292A/ko not_active Application Discontinuation
- 2016-08-30 SG SG10201607217WA patent/SG10201607217WA/en unknown
- 2016-08-31 CN CN201610791783.9A patent/CN106486387B/zh active Active
-
2018
- 2018-02-19 US US15/899,299 patent/US10468373B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0766268A (ja) * | 1993-08-20 | 1995-03-10 | Sony Corp | 半導体チップの吸着装置 |
CN1131077A (zh) * | 1995-03-15 | 1996-09-18 | 石川岛播磨重工业株式会社 | 轧材接合方法及接合装置 |
JPH11354587A (ja) * | 1998-06-08 | 1999-12-24 | Toyo Commun Equip Co Ltd | 発振器のフリップチップ実装方法 |
US20070085223A1 (en) * | 2004-09-15 | 2007-04-19 | Chunghwa Picture Tubes, Ltd. | Mechanism and process for compressing chips |
JP2011044462A (ja) * | 2009-08-19 | 2011-03-03 | Elpida Memory Inc | 搬送装置及び搬送方法 |
CN101811223A (zh) * | 2010-04-14 | 2010-08-25 | 宁波江丰电子材料有限公司 | 靶材组件焊接方法 |
CN103996641A (zh) * | 2011-09-06 | 2014-08-20 | 精工爱普生株式会社 | 分选机以及部件检查装置 |
CN104871300A (zh) * | 2013-05-23 | 2015-08-26 | 株式会社新川 | 电子零件安装装置以及电子零件的制造方法 |
CN104708157A (zh) * | 2013-12-17 | 2015-06-17 | 库利克和索夫工业公司 | 用于焊接半导体元件的焊接机的操作方法和焊接机 |
Also Published As
Publication number | Publication date |
---|---|
US10468373B2 (en) | 2019-11-05 |
SG10201607217WA (en) | 2017-03-30 |
US20170062378A1 (en) | 2017-03-02 |
TWI695449B (zh) | 2020-06-01 |
CN106486387B (zh) | 2021-06-29 |
US20180174997A1 (en) | 2018-06-21 |
KR20170026292A (ko) | 2017-03-08 |
SG10202001705VA (en) | 2020-04-29 |
TW201719800A (zh) | 2017-06-01 |
US9929121B2 (en) | 2018-03-27 |
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