CN106463647B - 封装膜 - Google Patents
封装膜 Download PDFInfo
- Publication number
- CN106463647B CN106463647B CN201680001657.7A CN201680001657A CN106463647B CN 106463647 B CN106463647 B CN 106463647B CN 201680001657 A CN201680001657 A CN 201680001657A CN 106463647 B CN106463647 B CN 106463647B
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- CN
- China
- Prior art keywords
- encapsulating film
- sensitive adhesive
- pressure sensitive
- film according
- adhesive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 154
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 70
- 150000001875 compounds Chemical class 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 39
- 229920000642 polymer Polymers 0.000 claims description 35
- 239000000203 mixture Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 24
- 239000002516 radical scavenger Substances 0.000 claims description 22
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 claims description 19
- 125000000217 alkyl group Chemical group 0.000 claims description 18
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 claims description 17
- 239000000178 monomer Substances 0.000 claims description 17
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 claims description 15
- 125000001118 alkylidene group Chemical group 0.000 claims description 14
- 125000004432 carbon atom Chemical group C* 0.000 claims description 11
- 125000003342 alkenyl group Chemical group 0.000 claims description 9
- 125000000524 functional group Chemical group 0.000 claims description 9
- 125000000304 alkynyl group Chemical group 0.000 claims description 8
- 239000003999 initiator Substances 0.000 claims description 8
- 229920001577 copolymer Polymers 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 claims description 6
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 125000003118 aryl group Chemical group 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 3
- 230000005484 gravity Effects 0.000 claims description 3
- 229920000089 Cyclic olefin copolymer Polymers 0.000 claims description 2
- 229910052770 Uranium Inorganic materials 0.000 claims description 2
- 125000004429 atom Chemical group 0.000 claims description 2
- 238000005984 hydrogenation reaction Methods 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- SYWDWCWQXBUCOP-UHFFFAOYSA-N benzene;ethene Chemical group C=C.C1=CC=CC=C1 SYWDWCWQXBUCOP-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 abstract description 7
- 239000001301 oxygen Substances 0.000 abstract description 7
- 238000012545 processing Methods 0.000 abstract description 7
- 238000012423 maintenance Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 94
- -1 nonyl ester Chemical class 0.000 description 22
- 229920005989 resin Polymers 0.000 description 15
- 239000011347 resin Substances 0.000 description 15
- 238000000576 coating method Methods 0.000 description 14
- 210000002469 basement membrane Anatomy 0.000 description 12
- 239000003822 epoxy resin Substances 0.000 description 12
- 229920000647 polyepoxide Polymers 0.000 description 12
- 239000000523 sample Substances 0.000 description 12
- 239000004821 Contact adhesive Substances 0.000 description 11
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 11
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 238000005538 encapsulation Methods 0.000 description 9
- 150000002148 esters Chemical class 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000003906 humectant Substances 0.000 description 6
- 239000004615 ingredient Substances 0.000 description 6
- 238000003475 lamination Methods 0.000 description 6
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 5
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000003431 cross linking reagent Substances 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- 150000003254 radicals Chemical class 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 4
- 235000015511 Liquidambar orientalis Nutrition 0.000 description 4
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000004870 Styrax Substances 0.000 description 4
- 244000028419 Styrax benzoin Species 0.000 description 4
- 235000000126 Styrax benzoin Nutrition 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 229920006223 adhesive resin Polymers 0.000 description 4
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000003760 tallow Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- PUAQLLVFLMYYJJ-UHFFFAOYSA-N 2-aminopropiophenone Chemical compound CC(N)C(=O)C1=CC=CC=C1 PUAQLLVFLMYYJJ-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000004840 adhesive resin Substances 0.000 description 3
- 150000001336 alkenes Chemical class 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 150000001993 dienes Chemical class 0.000 description 3
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- INHCSSUBVCNVSK-UHFFFAOYSA-L lithium sulfate Inorganic materials [Li+].[Li+].[O-]S([O-])(=O)=O INHCSSUBVCNVSK-UHFFFAOYSA-L 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052938 sodium sulfate Inorganic materials 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 125000001424 substituent group Chemical group 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- HBGPNLPABVUVKZ-POTXQNELSA-N (1r,3as,4s,5ar,5br,7r,7ar,11ar,11br,13as,13br)-4,7-dihydroxy-3a,5a,5b,8,8,11a-hexamethyl-1-prop-1-en-2-yl-2,3,4,5,6,7,7a,10,11,11b,12,13,13a,13b-tetradecahydro-1h-cyclopenta[a]chrysen-9-one Chemical compound C([C@@]12C)CC(=O)C(C)(C)[C@@H]1[C@H](O)C[C@]([C@]1(C)C[C@@H]3O)(C)[C@@H]2CC[C@H]1[C@@H]1[C@]3(C)CC[C@H]1C(=C)C HBGPNLPABVUVKZ-POTXQNELSA-N 0.000 description 2
- XKSUVRWJZCEYQQ-UHFFFAOYSA-N 1,1-dimethoxyethylbenzene Chemical compound COC(C)(OC)C1=CC=CC=C1 XKSUVRWJZCEYQQ-UHFFFAOYSA-N 0.000 description 2
- PFRGGOIBYLYVKM-UHFFFAOYSA-N 15alpha-hydroxylup-20(29)-en-3-one Natural products CC(=C)C1CCC2(C)CC(O)C3(C)C(CCC4C5(C)CCC(=O)C(C)(C)C5CCC34C)C12 PFRGGOIBYLYVKM-UHFFFAOYSA-N 0.000 description 2
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical class C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- NJWGQARXZDRHCD-UHFFFAOYSA-N 2-methylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3C(=O)C2=C1 NJWGQARXZDRHCD-UHFFFAOYSA-N 0.000 description 2
- OBOSXEWFRARQPU-UHFFFAOYSA-N 2-n,2-n-dimethylpyridine-2,5-diamine Chemical compound CN(C)C1=CC=C(N)C=N1 OBOSXEWFRARQPU-UHFFFAOYSA-N 0.000 description 2
- CXMYWOCYTPKBPP-UHFFFAOYSA-N 3-(3-hydroxypropylamino)propan-1-ol Chemical compound OCCCNCCCO CXMYWOCYTPKBPP-UHFFFAOYSA-N 0.000 description 2
- LVGFPWDANALGOY-UHFFFAOYSA-N 8-methylnonyl prop-2-enoate Chemical compound CC(C)CCCCCCCOC(=O)C=C LVGFPWDANALGOY-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 229910001374 Invar Inorganic materials 0.000 description 2
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical compound CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 229920002367 Polyisobutene Polymers 0.000 description 2
- SOKRNBGSNZXYIO-UHFFFAOYSA-N Resinone Natural products CC(=C)C1CCC2(C)C(O)CC3(C)C(CCC4C5(C)CCC(=O)C(C)(C)C5CCC34C)C12 SOKRNBGSNZXYIO-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical compound [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 229920005549 butyl rubber Polymers 0.000 description 2
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002118 epoxides Chemical class 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 125000001153 fluoro group Chemical class F* 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000012948 isocyanate Substances 0.000 description 2
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 2
- 150000002513 isocyanates Chemical class 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 239000003607 modifier Substances 0.000 description 2
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 239000004843 novolac epoxy resin Substances 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 239000003208 petroleum Substances 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 2
- 235000011152 sodium sulphate Nutrition 0.000 description 2
- 229910001631 strontium chloride Inorganic materials 0.000 description 2
- AHBGXTDRMVNFER-UHFFFAOYSA-L strontium dichloride Chemical compound [Cl-].[Cl-].[Sr+2] AHBGXTDRMVNFER-UHFFFAOYSA-L 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- CTLDMRCJDQGAQJ-UHFFFAOYSA-N (1,1-dimethoxy-2-phenylethyl)benzene Chemical compound C=1C=CC=CC=1C(OC)(OC)CC1=CC=CC=C1 CTLDMRCJDQGAQJ-UHFFFAOYSA-N 0.000 description 1
- RLUFBDIRFJGKLY-UHFFFAOYSA-N (2,3-dichlorophenyl)-phenylmethanone Chemical compound ClC1=CC=CC(C(=O)C=2C=CC=CC=2)=C1Cl RLUFBDIRFJGKLY-UHFFFAOYSA-N 0.000 description 1
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- 229940058015 1,3-butylene glycol Drugs 0.000 description 1
- DKEGCUDAFWNSSO-UHFFFAOYSA-N 1,8-dibromooctane Chemical compound BrCCCCCCCCBr DKEGCUDAFWNSSO-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- XDOFQFKRPWOURC-UHFFFAOYSA-N 16-methylheptadecanoic acid Chemical compound CC(C)CCCCCCCCCCCCCCC(O)=O XDOFQFKRPWOURC-UHFFFAOYSA-N 0.000 description 1
- GIMQKKFOOYOQGB-UHFFFAOYSA-N 2,2-diethoxy-1,2-diphenylethanone Chemical class C=1C=CC=CC=1C(OCC)(OCC)C(=O)C1=CC=CC=C1 GIMQKKFOOYOQGB-UHFFFAOYSA-N 0.000 description 1
- HNRMPXKDFBEGFZ-UHFFFAOYSA-N 2,2-dimethylbutane Chemical class CCC(C)(C)C HNRMPXKDFBEGFZ-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical class C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- LCHAFMWSFCONOO-UHFFFAOYSA-N 2,4-dimethylthioxanthen-9-one Chemical class C1=CC=C2C(=O)C3=CC(C)=CC(C)=C3SC2=C1 LCHAFMWSFCONOO-UHFFFAOYSA-N 0.000 description 1
- FTALTLPZDVFJSS-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl prop-2-enoate Chemical compound CCOCCOCCOC(=O)C=C FTALTLPZDVFJSS-UHFFFAOYSA-N 0.000 description 1
- XOGPDSATLSAZEK-UHFFFAOYSA-N 2-Aminoanthraquinone Chemical group C1=CC=C2C(=O)C3=CC(N)=CC=C3C(=O)C2=C1 XOGPDSATLSAZEK-UHFFFAOYSA-N 0.000 description 1
- ZCDADJXRUCOCJE-UHFFFAOYSA-N 2-chlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC=C3SC2=C1 ZCDADJXRUCOCJE-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
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- 125000000686 lactone group Chemical group 0.000 description 1
- PBOSTUDLECTMNL-UHFFFAOYSA-N lauryl acrylate Chemical compound CCCCCCCCCCCCOC(=O)C=C PBOSTUDLECTMNL-UHFFFAOYSA-N 0.000 description 1
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- 150000002739 metals Chemical class 0.000 description 1
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- 150000002989 phenols Chemical class 0.000 description 1
- ZBVQEUUTPTVMHY-UHFFFAOYSA-N phenyl-(2-phenylphenyl)methanone Chemical compound C=1C=CC=C(C=2C=CC=CC=2)C=1C(=O)C1=CC=CC=C1 ZBVQEUUTPTVMHY-UHFFFAOYSA-N 0.000 description 1
- 125000004344 phenylpropyl group Chemical group 0.000 description 1
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- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 1
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- 235000012222 talc Nutrition 0.000 description 1
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- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- RBTVSNLYYIMMKS-UHFFFAOYSA-N tert-butyl 3-aminoazetidine-1-carboxylate;hydrochloride Chemical compound Cl.CC(C)(C)OC(=O)N1CC(N)C1 RBTVSNLYYIMMKS-UHFFFAOYSA-N 0.000 description 1
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
- B32B15/085—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyolefins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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Abstract
本申请涉及一种封装膜、包含该封装膜的有机电子器件，以及制造该有机电子器件的方法，并提供一种封装膜，该封装膜能够形成可以有效地阻隔水分或氧气从外部进入有机电子器件的结构，在面板的制造过程中表现出优异的加工性能，同时，在高温高湿的条件下具有优异的耐热维持力。
Description
相关申请的交叉引用
本申请要求于2015年2月4日提交到韩国知识产权局的韩国专利申请No.2015-0017620的权益，该申请的全部公开内容通过引用并入本文。
技术领域
本申请涉及一种封装膜、包含该封装膜的有机电子器件(OED)以及使用该封装膜制造OED的方法。
背景技术
OED是一种包括利用空穴和电子交换电荷的有机材料层的装置，并且OED可以是，例如，光伏器件、整流器、发射器或有机发光二极管(OLED)。
在OED中，OLED具有比传统光源更低的功耗和更高的响应速度，并且有利于较薄的显示装置或照明装置。这种OLED还具有优异的空间适用性，且有望应用于包括各种便携式设备、监视器、笔记本电脑和TV的多种领域。
为了OLED的商业化和用途扩展，最关键的问题是耐久性。OLED中包括的有机材料和金属电极非常容易被外部因素(如水分)所氧化。因此，包括OLED的产品对环境因素非常敏感。为此，已经提出各种方法以有效地防止氧气或水分从外部渗入OED(如OLED)中。
在专利文件1中，公开了一种粘性包封组合物薄膜和有机电致发光元件，所述组合物是聚异丁烯(PIB)类压敏粘合剂，但其在高温高湿条件下具有低的加工性能和低的可靠性。此外，在层压大型扁平面板的过程中，气泡被封闭在面板之间，因此无法获得均匀的层压性能。
因此，需要开发一种能够确保OED所要求的寿命、有效地防止水分渗入OED、在高温高湿条件下保持可靠性，并具有优异的层压性能(在制造面板的过程中所需的特性之一)的封装剂。
现有技术
专利文件
(专利文件1)韩国未审查专利申请No.2008-0088606
发明内容
技术问题
本申请提供一种封装膜，该封装膜可以形成能够有效地阻隔水分或氧气从外部进入OED的结构，在面板的制造过程中具有优异的加工性能，并且在高温高湿的条件下具有优异的保热性。
技术方案
下文中，将参考附图更详细地描述本申请的示例性实施方案。此外，为了说明本申请，将省略对已知的常规功能或结构的详细描述。此外，示意性地提供附图以帮助理解本申请。为了更清楚地解释本申请，将省略与说明无关的部件，并放大厚度以清楚地表示数个层和区域。本申请的范围不限于附图中所示的厚度、尺寸和比例。
本申请涉及一种封装膜。该封装膜可以用于封装或包封OED，如OLED。
本文所用术语“有机电子器件(OED)”指具有包括利用空穴与电子在一对相对的电极之间产生电荷交换的有机材料层的结构的产品或器件，且OED的实例可以包括，但本申请不限于，光伏器件、整流器、发射器和OLED。在本申请的一个示例性实施方案中，OED可以是OLED。
本申请的封装膜可以密封OED的有机电子元件的整个表面，以保护该元件免受水分或氧气的影响。这种封装膜可以包含衍生自丁烯的聚合物和满足式1的压敏粘合剂层。
示例性封装膜的压敏粘合剂层可以满足通式1。
[通式1]
d≤1mm
在通式1中，d是当将通过在金属基底的一个表面上形成厚度为50μm的压敏粘合剂层而制备的样品以1cm×1cm的粘合面积粘附于玻璃，并在85℃下将500g的重量沿重力方向负载于金属基底1小时时，压敏粘合剂层向后蠕动的距离。此处，金属基底可以由铜、铝、镍、殷钢(invar)或不锈钢(SUS)形成。详细地讲，如上所述，包括压敏粘合剂层和金属基底的层压样品的压敏粘合剂层的表面可以以1cm×1cm的面积粘附于玻璃，并且可以将重量负载于金属基底。压敏粘合剂层的蠕变距离可以按照金属基底的移动的距离来测量。在该通式中，d可以为1mm以下，例如，990μm以下、950μm以下、800μm以下、700μm以下、600μm以下或400μm以下。
构成压敏粘合剂层的压敏粘合剂组合物可以包含衍生自丁烯的聚合物，并且另外包含满足式1的化合物。式1的化合物可以包括单官能丙烯酸酯。
所述单官能丙烯酸酯可以是满足式1的化合物。
[式1]
在式1中，T可以是直链或支链的烷基、烯基或炔基。所述烷基、烯基或炔基可以是具有含有6至30、7至25、8至23、9至20、10至19、6至17或6至11个碳原子的直链或支链结构。此外，T可以是-U-[O-W]n-O-Q。此处，U和W各自独立地是亚烷基(alkylene group)或次烷基(alkylidene group)，Q是烷基、烯基、炔基或芳基。此外，n为0至10的数字，当n为0时，U可以直接连接至-O-Q。由于本申请的压敏粘合剂组合物包含疏水性聚合物和式1的特定化合物两者，当其用于有机电子元件的封装时，在面板的制造过程中该组合物可以表现出优异的加工性能，以及在高温高湿的条件下的优异的保热性。
在一个示例性实施方案中，所述组合物可以包含60至95重量份的衍生自丁烯的聚合物和5至40重量份的满足式1的化合物。在一个示例性实施方案中，所述组合物可以包含60至90重量份的衍生自丁烯的聚合物和10至40重量份的满足式1的化合物，或65至90重量份的衍生自丁烯的聚合物和10至35重量份的满足式1的化合物。在本申请中，当将所述组分的含量调节至上述范围内时，可以实现优异的阻湿性和在高温高湿的条件下的保热性。式1的化合物可以包括，但不特别限于，丙烯酸正辛酯、丙烯酸异辛酯、丙烯酸异壬酯、丙烯酸月桂酯、丙烯酸硬脂酸酯、丙烯酸异硬脂酸酯、丙烯酸异癸酯、2-(2-乙氧基乙氧基)丙烯酸乙酯(2-(2-ethoxyethoxy)ethyl acrylate)、甲氧基三乙二醇丙烯酸酯或甲氧基聚乙二醇丙烯酸酯。
除非另外特别限定，本文所用术语“烷基”可以是具有1至30、1至25、1至20、1至16、1至12、1至8或1至4个碳原子的烷基。所述烷基可以具有直链、支链或环状结构，并且可以任意地被至少一个取代基取代。
另外，除非另外特别限定，本文所用术语“烯基”或“炔基”可以是具有2至20、2至16、2至12、2至8或2至4个碳原子的烯基或炔基。该烯基或炔基可以是直链、支链或环状。此外，所述烯基可以任意地被至少一个取代基取代。
另外，除非另外特别限定，本文所用术语“亚烷基”或“次烷基”可以是具有2至30、2至25、2至20、2至16、2至12、2至10或2至8个碳基的亚烷基或次烷基。该亚烷基或次烷基可以是直链、支链或环状。此外，所述亚烷基或次烷基可以任意地被至少一个取代基取代。
除非另外特别限定，本文所用术语“芳基”可以是衍生自包含苯，或者两个以上的苯被缩合或偶合的结构的化合物或其衍生物的一价残基，。所述芳基可以具有6至22，优选为6至16，更优选为6至13个碳原子，并且可以是，例如，苯基、苯乙基、苯丙基、苄基、甲苯基、二甲苯基或萘基。
术语“衍生自丁烯的聚合物”可以指所述聚合物的一个或多个聚合单元衍生自丁烯。由于衍生自丁烯的聚合物具有非常低的极性，透明且几乎没有腐蚀的影响，当其用作封装剂或密封剂时，所述聚合物可以表现出优异的阻湿性和优异的耐久性及可靠性。
并且，在本申请中，衍生自丁烯的聚合物可以是丁烯单体的均聚物；由丁烯单体与不同的可聚合单体进行共聚而形成的共聚物；使用丁烯单体的反应性低聚物；或它们的混合物。本申请中衍生的聚合物指聚合物以聚合单体的单元来形成。丁烯单体可以包括，例如，1-丁烯，2-丁烯或异丁烯。
丁烯单体或者能够与衍生物聚合的不同的单体可以包括，例如，异戊二烯、苯乙烯或丁二烯。当使用共聚物时，可以保持物理性质如加工性能和交联度，因此，当其应用于OED时，可以确保压敏粘合剂本身的耐热性。
另外，使用丁烯单体的反应性低聚物可以包括具有反应性官能团的丁烯聚合物。所述低聚物的重均分子量可以为500至5,000。此外，丁烯聚合物可以连接至具有反应性官能团的不同的聚合物。所述不同的聚合物可以是(甲基)丙烯酸烷基酯，但本申请不限于此。所述反应性官能团可以是羟基、羧基、异氰酸酯基或含氮基团。此外，所述反应性低聚物和不同的聚合物可以通过多官能交联剂交联，该多官能交联剂可以是选自异氰酸酯交联剂、环氧交联剂、氮丙啶(aziridin)交联剂和金属螯合物交联剂中的一种或多种。
在一个示例性实施方案中，本申请的衍生自丁烯的聚合物可以是二烯与含有一个碳-碳双键的烯烃类化合物的共聚物。此处，烯烃类化合物可以包括丁烯，并且二烯可以是能够与烯烃类化合物聚合的单体，例如，异戊二烯或丁二烯。例如，含有碳-碳双键的烯烃类化合物与二烯的共聚物可以是丁基橡胶。
在本申请中，所述聚合物可以具有使压敏粘合剂组合物能以薄膜形状成型的某一重均分子量(Mw)。例如，所述聚合物的重均分子量可以为约10,000至2,000,000、10,000至1,000,000、10,000至500,000或10,000至300,000。在本申请中，术语“重均分子量”是指通过凝胶渗透色谱法(GPC)测定的对于标准聚苯乙烯的转换值。然而，上述重均分子量不一定具有树脂成分。例如，即使当树脂成分的分子量不足以形成薄膜时，可以在压敏粘合剂组合物中混入单独的粘合剂树脂。术语“聚合物”和“树脂成分”可以具有彼此相同的含义。
在本申请的一个示例性实施方案中，压敏粘合剂层还可以包含能够通过照射活性能量射线而聚合的多官能活性能量射线可聚合化合物。所述活性能量射线可聚合化合物可以满足式2。
[式2]
在式2中，R1是氢或具有1至4个碳原子的烷基，n是2以上的整数，X是衍生自具有3至30个碳原子的直链、支链或环状烷基的残基。
满足式2的活性能量射线可聚合化合物尤其具有与本申请的聚合物的优异的相容性，因此可以满足高温高湿条件下的可靠性。例如，所述活性能量射线可聚合化合物与上述衍生自丁烯的聚合物可以使压敏粘合剂组合物具有优异的阻湿性和高温高湿条件下的优异的可靠性。
活性能量射线可聚合化合物可以指包含两个或更多个的能够通过照射活性能量射线而参与聚合反应的官能团的化合物，例如，包含类似乙烯基的不饱和双键(如丙烯酰基或甲基丙烯酰基)的官能团，以及诸如环氧基或氧杂环丁烷基的官能团。
如上所述，活性能量射线可聚合化合物可以满足式2。
[式2]
在式2中，R1是氢或具有1至4个碳原子的烷基，n是2以上的整数，X是衍生自具有3至30个碳原子的直链、支链或环状烷基的残基。此处，当X是衍生自环状烷基的残基时，X可以是衍生自具有3至30、6至28、8至22或12至20个碳原子的环状烷基的残基。另外，当X是衍生自直链烷基的残基时，X可以是衍生自具有3至30、6至25或8至20个碳原子的直链烷基的残基。此外，当X是衍生自支链烷基的残基时，X可以是衍生自具有3至30、5至25或6至20个碳原子的支链烷基的残基。
本文所用术语“衍生自烷基的残基”可以指特定化合物的残基，例如，烷基。在一个示例性实施方案中，在式2中，当n为2时，X可以是亚烷基。此外，当n为3以上时，两个或更多个氢原子从X的烷基释放，并且可以与式2的(甲基)丙烯酰基结合。
对能够通过照射活性能量射线而聚合的多官能活性能量射线可聚合化合物的使用可以没有限制，只要其满足式2即可。例如，所述化合物可以是1,4-丁二醇二(甲基)丙烯酸酯、1,3-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、1,8-辛二醇二(甲基)丙烯酸酯、1,12-十二烷二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、二环戊基二(甲基)丙烯酸酯、环己烷-1,4-二甲醇二(甲基)丙烯酸酯、三环癸烷二甲醇(甲基)丙烯酸酯、二羟甲基二环戊烷二(甲基)丙烯酸酯、新戊二醇改性的三甲基丙烷二(甲基)丙烯酸酯、金刚烷二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯或它们的混合物。
作为多官能活性能量射线可聚合化合物，例如，可以使用分子量小于1,000且包含两个或更多个官能团的化合物。在这种情况下，分子量可以指重均分子量或常规分子量。多官能活性能量射线可聚合化合物中包含的环状结构可以是碳环结构、杂环结构、单环结构或多环结构中的任意一种。
在一个示例性实施方案中，所述组合物可以包含50至90重量份的衍生自丁烯的聚合物、5至35重量份的满足式1的化合物和5至25重量份的式2的多官能活性能量射线可聚合化合物。在一个示例性实施方案中，压敏粘合剂组合物中包含的衍生自丁烯的聚合物、满足式1的化合物和式2的多官能活性能量射线可聚合化合物的重量比可以分别为50至85重量份、5至30重量份和10至25重量份；或者60至85重量份、10至30重量份和2至20重量份。在本申请中，当将所述组分的含量调节至上述范围内时，可以实现优异的阻湿性和在高温高湿条件下的保热性。
在一个示例性实施方案中，压敏粘合剂层还可以包含增粘剂，该增粘剂优选为氢化环烯烃类聚合物。作为增粘剂，例如，可以使用对石油树脂进行氢化得到的氢化石油树脂。该氢化石油树脂可以部分或完全氢化，或者可以使用这种树脂的混合物。对于增粘剂，可以选择与压敏粘合剂组合物具有较高的相容性、阻湿性优异且挥发性有机成分含量低的增粘剂。作为所述氢化石油树脂的具体实例，可以使用氢化萜烯类树脂、氢化酯类树脂或者氢化二环戊二烯类树脂。增粘剂的重均分子量可以为约200至5,000。必要时，可以适当地调整增粘剂的含量。例如，可以鉴于与聚合物的相容性来选择增粘剂的含量，根据一个实例，基于100重量份的聚合物，增粘剂的含量可以为5至100重量份、8至95重量份、10至93重量份或15至90重量份。
在本申请的一个示例性实施方案中，压敏粘合剂层还可以包含能够引发上述活性能量射线可聚合化合物的聚合反应的自由基引发剂。该自由基引发剂可以是光引发剂或热引发剂。可以鉴于固化速率和黄化可能性，适当地选择光引发剂的具体类型。例如，可以使用安息香类、羟基酮类、氨基酮类或氧化膦类光引发剂，具体地，可以使用安息香、安息香甲醚、安息香乙醚、安息香异丙醚、安息香正丁醚、安息香异丁醚、苯乙酮、二甲基氨基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基-2-苯基苯乙酮、2-羟基-2-甲基-1-苯基丙-1-酮、1-羟基环己基苯基酮、2-甲基-1-[4-(甲硫基)苯基]-2-吗啉基-丙-1-酮、4-(2-羟基乙氧基)苯基-2-(羟基-2-丙基)酮、二苯甲酮、对苯基二苯甲酮、4,4’-二乙基氨基二苯甲酮、二氯二苯甲酮、2-甲基蒽醌、2-乙基蒽醌、2-叔丁基蒽醌、2-氨基蒽醌、2-甲基噻吨酮、2-乙基噻吨酮、2-氯噻吨酮、2,4-二甲基噻吨酮、2,4-二乙基噻吨酮、苄基二甲基缩酮(benzyldimethylketal)、苯乙酮二甲基缩酮(acetophenone dimethylketal)、对二甲氨基苯甲酸酯(p-dimethylamino benzoic acid ester)、低聚[2-羟基-2-甲基-1-[4-(1-甲基乙烯基)苯基]丙酮]或2,4,6-三甲基苯甲酰基-二苯基-氧化膦。
相对于100重量份的活性能量射线可聚合化合物，自由基引发剂的含量可以为0.2至20重量份、0.5至18重量份、1至15重量份或2至13重量份。因此，可以有效地引发活性能量射线可聚合化合物的反应，并且可以防止由固化后的残余组分所引起的压敏粘合剂组合物的物理性质的劣化。
当需要时，压敏粘合剂层还可以包含水分清除剂。术语“水分清除剂”可以指能够通过与其的化学反应，将渗入下文将描述的封装膜的水分或蒸汽除去的材料。特别地，当压敏粘合剂组合物形成为薄膜时，其可以用于封装OED。
例如，水分清除剂可以均匀地分散在压敏粘合剂组合物或下文将描述的压敏粘合剂层中。此处，均匀分散的状态可以指水分清除剂以相同或基本相同的密度存在于压敏粘合剂组合物或压敏粘合剂层的任何部分的状态。作为水分清除剂，例如，可以使用金属氧化物、硫酸盐或有机金属氧化物。具体地，作为硫酸盐的实例，可以使用硫酸镁、硫酸钠或硫酸镍，作为有机金属氧化物的实例，可以使用氧化铝辛酸酯。此处，金属氧化物的具体实例可以是五氧化二磷(P2O5)、氧化锂(Li2O)、氧化钠(Na2O)、氧化钡(BaO)、氧化钙(CaO)或氧化镁(MgO)，金属盐的实例可以是硫酸盐，如硫酸锂(Li2SO4)、硫酸钠(Na2SO4)、硫酸钙(CaSO4)、硫酸镁(MgSO4)、硫酸钴(CoSO4)、硫酸镓(Ga2(SO4)3)、硫酸钛(Ti(SO4)2)或硫酸镍(NiSO4)；或金属卤化物，如氯化钙(CaCl2)、氯化镁(MgCl2)、氯化锶(SrCl2)、氯化钇(YCl3)、氯化铜(CuCl2)、氟化铯(CsF)、五氟化钽(TaF5)、五氟化铌(NbF5)、溴化锂(LiBr)、溴化钙(CaBr2)、溴化铯(CeBr3)、溴化硒(SeBr4)、溴化钒(VBr3)、溴化镁(MgBr2)、碘化钡(BaI2)或碘化镁(MgI2)；或金属氯酸盐，如高氯酸钡(Ba(ClO4)2)或高氯酸镁(Mg(ClO4)2)，但是本申请不限于此。作为压敏粘合剂组合物中可以包含的水分清除剂，可以使用上述成分中的一种或两种或更多种。在一个示例性实施方案中，当使用两种或更多种的上述成分作为水分清除剂时，可以使用煅烧白云石。
这种水分清除剂可以根据用途控制在适当的尺寸。在一个示例性实施方案中，水分清除剂的平均粒径可以控制为约10至1,5000nm。尺寸在上述范围内的水分清除剂由于与水分的反应速度不那么快而可以易于储存，并且可以有效地除去水分而不损坏待封装的元件。
水分清除剂的含量可以鉴于所需的阻隔性适当地选择，而没有特别地限制。
当需要时，压敏粘合剂层还可以包含阻湿剂。本文所用术语“阻湿剂”可以是与水分不具反应性或者可以防止或干扰水分或蒸汽在薄膜中移动的材料。作为阻湿剂，可以使用粘土、滑石、针状二氧化硅、片状二氧化硅、多孔二氧化硅、沸石、氧化钛和氧化锆中的一种或两种或更多种。此外，阻湿剂的表面可以用有机改性剂处理，以有利于有机材料的渗透。这种有机改性剂可以是，例如，二甲基苄基氢化牛脂季铵、二甲基氢化牛脂季铵、甲基牛脂双-2-羟基乙基季铵、二甲基氢化牛脂-2-乙基己基季铵、二甲基去氢化牛脂季铵或它们的混合物。
阻湿剂的含量可以鉴于所需的阻隔性适当地选择，而没有特别地限制。
除上述成分之外，压敏粘合剂层还可以根据其用途和下文将描述的压敏粘合剂薄膜的制造过程而包含各种添加剂。例如，根据所需的物理性质，压敏粘合剂组合物可以包含适当含量范围的可固化材料、交联剂或填料。
在一个示例性实施方案中，所述压敏粘合剂层可以具有单层或两层以上的多层结构。当压敏粘合剂层以两个以上的层形成时，压敏粘合剂层中各层的成分可以彼此相同或不同。例如，所述封装膜可以包括含有上述压敏粘合剂组合物的第二层，以及含有压敏粘合剂树脂或粘合剂树脂的第一层。第一层中包含的压敏粘合剂树脂可以与上述聚合物相同或不同，并且可以根据本领域的技术人员的目的适当地选择。此外，第一层和第二层可以各自包含或不含所述水分清除剂。
在一个示例性实施方案中，第一层中包含的粘合剂树脂可以被固化以具有粘附性能，并且可以包括如下可固化树脂：该可固化树脂具有一个或多个可热固化官能团，例如，缩水甘油基、异氰酸酯基、羟基、羧基或酰胺基；或者一个或多个能够通过照射电磁波而固化的官能团，例如，环氧基、环醚基、硫醚基、缩醛基或内酯基。此外，上述树脂的具体类型可以是，但不限于，丙烯酸酯树脂、聚酯树脂、异氰酸酯树脂或环氧树脂。
在本申请中，作为可固化树脂，可以使用芳香族或脂肪族环氧树脂；或者直链或支链的环氧树脂。在本申请的一个示例性实施方案中，具有两个或更多个官能团的可固化树脂可以是环氧当量为180至1,000g/eq的环氧树脂。通过使用具有上述环氧当量范围的环氧树脂，可以有效地保持固化产品的性能，如粘附性能和玻璃化转变温度。作为环氧树脂的实例，可以使用甲酚酚醛环氧树脂、双酚A型环氧树脂、双酚A型酚醛环氧树脂、苯酚酚醛环氧树脂、四官能环氧树脂、联苯型环氧树脂、三苯酚甲烷型环氧树脂、烷基改性的三苯酚甲烷环氧树脂、萘型环氧树脂、二环戊二烯型环氧树脂和二环戊二烯改性的苯酚型环氧树脂中的一种或至少两种的混合物。
在本申请的一个示例性实施方案中，第一层或第二层可以包含其他成分，如上述活性能量射线可聚合化合物、自由基引发剂、增粘剂、水分清除剂、阻湿剂、分散剂或硅烷化合物以及上述树脂，并且第一层和第二层的成分可以彼此相同或不同。此外，根据所需的物理性质，第二层可以包含适当含量范围的可固化材料、固化剂或填料。同时，考虑到所述封装膜是用于封装有机电子元件，可以根据元件的受损情况来控制水分清除剂的含量。例如，在与元件接触的层中可以包含少量的水分清除剂或不含水分清除剂。在一个示例性实施方案中，以封装膜中包含的水分清除剂的总重量计，与元件接触的第二层可以包含0至20％的水分清除剂。此外，以封装膜中包含的水分清除剂的总重量计，未与元件接触的第一层可以包含80至100％的水分清除剂。
对堆叠第二层和另外堆叠的第一层的顺序没有特别地限制。例如，第二层可以在第一层上形成，或者相反，第一层可以在第二层上形成。此外，封装膜可以由三层或更多层形成。例如，可以包括两个以上的第一层，或者可以包括两个以上的第二层。
在一个示例性实施方案中，第一层由通式2计算的弹性分数可以为30至80％，第二层由通式2计算的弹性分数可以为8至40％。
[通式2]
Ep(单位:％)＝100×σ2/σ1
在通式2中，σ1是在压敏粘合剂层形成为600μm的厚度时，在高级流变膨胀系统(ARES)的应力松弛试验模式中，使用直径为8mm的平行板在85℃下通过施加约200gf的法向力，向薄膜施加30％的应变时测得的最大应力值，σ2是薄膜在施有该应变的状态下维持180秒之后测得的应力值。具体地，首先形成厚度为600μm的压敏粘合剂层，并使用高级流变膨胀系统(ARES)的应力松弛试验模式。此时，使用直径为8mm的平行板在85℃下施加约200gf的法向力。σ1是在薄膜具有30％的应变时测得的最大应力值，σ2是薄膜在具有该应变的状态下维持180秒之后测得的应力值。
如上所述，封装膜可以用于封装或包封OED，如OLED。表现出上述数值(Ep)范围的封装膜可以形成封装或包封结构，当该封装或包封结构用于封装或包封工艺时，在高温耐久性试验条件下具有优异的耐久性而不产生气泡。在一个示例性实施方案中，如下面将描述的，所述封装膜可以用于形成覆盖OED的元件的顶面和侧面的封装或包封结构。
术语“高级流变膨胀系统(ARES)”是评价材料的粘弹性，如粘度、剪切模量、损耗因子和储能模量的流变仪。该仪器为机械测量装置，其可以对样品施加动力状态和正常状态，并在一定程度上测量样品承受如上施加的应力的转矩(transfer torque)。
在一个示例性实施方案中，本申请的封装膜可以直接粘附于在压敏粘合剂层的第一层上的金属层。本文所用术语“直接粘附”可以指在两层之间没有层。此外，第二层可以粘附于其上形成有元件的基板以完全地密封该元件。也就是说，第二层可以直接粘附于基板。
在一个示例性实施方案中，由上述通式2计算的示例性封装膜的第一层的Ep值可以为30至80％、30至75％或30至70％。此外，由上述通式2计算的第二层的Ep值可以为8至40％、10至40％或20至40％。在本申请中，考虑到第一层直接粘附于金属层，通过将Ep值控制在上述范围内，可以优异地保持第一层的粘着耐久性和可靠性。此外，在本申请中，通过将Ep值控制在上述范围内，可以实现基板和第二层的封装膜之间的层压质量。根据本申请的第一层的弹性分数的值可以等于或高于第二层的弹性分数的值，但是本申请不限于此。
在本申请的一个示例性实施方案中，根据ASTM D2979测量的第一层的探针粘着力可以在50至500gf的范围内，具体地，第一层的探针粘着力可以为60至450gf或70至400gf。此外，根据ASTM D2979测量的第二层的探针粘着力可以在3至100gf的范围内，具体地，第二层的探针粘着力可以为3至90gf。
另外，当形成为100μm的厚度时，在100°F和100％的相对湿度下，根据本申请的封装膜的压敏粘合剂层在该薄膜的厚度方向上测量的水蒸气透过率(WVTR)可以为50、40、30、20或10g/m2·天以下。当压敏粘合剂的成分或交联条件经调整以具有这样的WVTR时，将该压敏粘合剂应用于电子装置的封装或包封结构时，该封装或包封结构可以有效地阻隔水分或氧气从外部渗入，从而稳定地保护元件。WVTR越低，表现出的阻湿性越优异，因此，其下限可以是，但不特别限于，例如，0g/m2·天。
在本申请的一个示例性实施方案中，封装膜还可以包括金属层。根据本申请的一个示例性实施方案的金属层可以是透明的或不透明的。金属层可以通过在薄金属箔或聚合物基膜上沉积金属来形成。对于金属层，可以使用具有导热性和阻湿性的任意材料而没有限制。所述金属层可以包括金属、金属氧化物、金属氮化物、金属碳化物、金属氮氧化物、金属硼氧化物以及它们的混合物中的任意一种。例如，金属层可以包括两种或更多种金属的合金，例如，铁镍合金。此外，在一个示例性实施方案中，金属层可以包括金属氧化物，如氧化硅、氧化铝、氧化钛、氧化铟、氧化锡、氧化铟锡、氧化钽、氧化锆、氧化铌或它们的混合物。金属层可以利用电解、辊轧、加热蒸发、电子束蒸发、溅射、反应溅射、化学气相沉积、等离子体化学气相沉积或电子回旋共振等离子体源化学气相沉积的方法来沉积。在本申请的一个示例性实施方案中，金属层可以通过反应溅射来沉积。
优选地，金属层的热导率可以为50W/mK以上、60W/mK以上、70W/mK以上、80W/mK以上、90W/mK以上、100W/mK以上、110W/mK以上、120W/mK以上、130W/mK以上、140W/mK以上、150W/mK以上、200W/mK以上或250W/mK以上。由于高热导率，在金属层的层压过程中在层压界面处产生的热可以更快地散发。此外，由于高的热导率，在OED的运行中积蓄的热可以快速地散发至外界，因此OED本身的温度可以保持较低，并且可以减少裂纹和缺陷。
本文所用术语“热导率”可以是通过传导来传递热量的能力程度，其单位可以是W/mK。该单位是材料在相同的温度和距离下的热传导程度，并且是指相对于距离单位(米)和温度单位(开尔文)的热量单位(瓦特)。
在一个实例中，本申请的封装膜的压敏粘合剂层在5％的应变、1Hz的频率和30至150℃范围内的任意一个温度点下使用直径为8mm的平面锯齿，由剪切应力测量的门尼粘度(Mooney viscosity)(η*)为5,000至107Pa·s。门尼粘度可以通过已知的方法测量，例如，ARES(TA)法。该粘度的范围可以是，例如，5,000至107Pa·s、5,000至106Pa·s或5,000至5×105Pa·s。金属层可以进一步包含于满足所述粘度范围的压敏粘合剂层的一个表面上。满足所述粘度范围的压敏粘合剂层可以包括上述式1的化合物或活性能量射线可聚合化合物。
封装膜还可以包括基膜或离型膜(下文可以称为“第一薄膜”)，并且具有在该基膜或剥离膜上形成有压敏粘合剂的结构。此外，该结构还可以包括在压敏粘合剂上形成的基膜或离型膜(下文亦称为“第二薄膜”)。
图1和图2是根据本申请的一个示例性实施方案的封装膜的横截面图。
如图1中所示，本申请的封装膜可以包括在基膜或离型膜11上形成的压敏粘合剂层12和金属层13。此外，图2示出了包含第一层12a和第二层12b的压敏粘合剂层12。
对本申请中可以使用的第一薄膜的具体类型没有特别地限制。在本申请中，作为第一薄膜，例如，可以使用本领域中的常规聚合物薄膜。在本申请中，例如，作为基膜或剥离膜，可以使用聚对苯二甲酸乙二醇酯薄膜、聚四氟乙烯薄膜、聚乙烯薄膜、聚丙烯薄膜、聚丁烯薄膜、聚丁二烯薄膜、氯乙烯共聚物薄膜、聚氨酯薄膜、乙烯-乙酸乙烯酯薄膜、乙烯-丙烯共聚物薄膜、乙烯-丙烯酸乙酯共聚物薄膜、乙烯-丙烯酸甲酯共聚物薄膜或聚酰亚胺薄膜。另外，本申请的基膜或离型膜的一个或两个表面可以用合适的离型剂处理。作为在基膜的离型处理中使用的离型剂的实例，可以使用醇酸类、硅类、氟类、不饱和酯类、聚烯烃类或蜡类试剂，并且就耐热性而言，可以使用醇酸类、硅类或氟类离型剂，但是本申请不限于此。
在本申请中，对基膜或离型膜(第一薄膜)的厚度没有特别地限制，可以根据用途适当地选择。例如，在本申请中，第一薄膜的厚度可以为约10至500μm，优选为约20至200μm。当该厚度小于10μm时，基膜容易在制造过程中变形，当该厚度大于500μm时，经济可行性降低。
对本申请的封装膜中包括的压敏粘合剂层的厚度没有特别地限制，可以鉴于薄膜的用途，根据以下条件适当地选择。压敏粘合剂层的厚度可以为5至200μm，优选为5至100μm。当压敏粘合剂层的厚度小于5μm时，无法确保足够的粘附性能，并且会提高加工过程中的阻湿能力的损失率。当该厚度大于200μm时，难以确保加工性能，暴露于侧面的空间会扩大，使得阻湿性降低，耐热性降低，并且经济可行性降低。
本申请还涉及一种制造封装膜的方法。示例性的封装膜可以通过使压敏粘合剂层以薄膜状或片状成型而制得。
在一个示例性实施方案中，所述方法可以包括：将包含构成上述压敏粘合剂层的成分的涂布溶液以薄膜状或片状涂布在基膜或离型膜上，并干燥所涂布的涂布溶液。
所述涂布溶液，例如，可以通过将上述各个压敏粘合剂层的成分溶解或分散在适当的溶剂中而制得。在一个示例性实施方案中，当需要时，压敏粘合剂层可以通过将水分清除剂或填料溶解或分散在溶剂中，并将研磨后的水分清除剂或填料与封装树脂混合来制备。
对在涂布溶液的制备中所使用的溶剂的类型没有特别地限制。然而，当溶剂的干燥时间过长或者需要在高温下干燥时，在封装膜的可使用性或耐久性方面会产生问题，因此可以使用挥发温度为150℃以下的溶剂。考虑到薄膜的成型性，可以混合并使用少量的挥发温度在上述范围内或更高的溶剂。作为所述溶剂，可以使用甲基乙基酮(MEK)、丙酮、甲苯、二甲基甲酰胺(DMF)、甲基溶纤剂(MCS)、四氢呋喃(THF)、二甲苯和N-甲基吡咯烷酮(NMP)中的一种或两种或更多种，但是本申请不限于此。
将涂布溶液涂布在基膜或离型膜上的方法没有特别地限制，因此可以是，例如，已知的涂布方法，如刮刀涂布法、辊涂法、喷涂法、凹板涂布法、幕涂法、缺角轮涂布法(commacoating)或唇模涂布法(lip coating)。
被涂布的涂布溶液经干燥，溶剂挥发，从而可以形成压敏粘合剂层。该干燥可以，例如，在70至150℃下进行1至10分钟。干燥条件可以鉴于所使用的溶剂而改变。
对堆叠第一层和第二层的方法没有特别地限制。例如，在各自的剥离膜上形成的第一层和第二层可以层压，从而形成多层封装膜，或者第二层可以直接在第一层上形成，反之亦然。
干燥之后，可以在压敏粘合剂层上形成金属层。形成金属层的方法可以是本领域中的已知技术。例如，金属层可以由金属箔形成，或者通过在聚合物基层上沉积金属而形成。例如，金属层可以通过电解或者辊轧而形成。
本申请还涉及一种OED。该OED可以包括基板；在该基板上形成的有机电子元件；以及封装膜，其封装有机电子元件的整个表面，如所有顶面和侧面。所述封装膜可以包含含有处于交联状态的压敏粘合剂组合物的压敏粘合剂层。此外，封装膜还可以包含在压敏粘合剂层上形成的金属层。
此处，有机电子元件可以是，例如，有机发光元件。
另外，本申请涉及一种制造OED的方法。该OED可以使用，例如，所述封装膜来制造。
所述压敏粘合剂层可以形成为在OED中表现出优异的阻湿性并有效地固定和支撑基板和金属层的结构。
另外，无论OED是何种类型，如顶部发光型或底部发光型，压敏粘合剂层均可以稳定地形成。
本文所用术语“压敏粘合剂层”可以是覆盖有机电子元件的所有顶面和侧面的压敏粘合剂。
图3是示例性OED的示意图，其中有机电子元件为有机发光元件。
为了制造OED，例如，可以使用如下方法：将上述封装膜施用在其上形成有有机电子元件的基板上，以覆盖该有机电子元件的整个表面；以及固化所述封装膜。
本文所用术语“固化”可以指通过加热或UV照射使本申请的压敏粘合剂组合物交联，由此制备压敏粘合剂。
详细地讲，有机电子元件可以通过如下方式形成：通过真空沉积或溅射在用作基板的玻璃或聚合物膜上形成透明电极，在该透明电极上形成，例如，由空穴传输层、发光层和电子传输层组成的发光有机材料层，并进一步在其上形成电极层。随后，设置封装膜的压敏粘合剂层，以覆盖经上述工艺的基板的有机电子元件的整个表面。
在一个示例性实施方案中，如图3中所示，可以设置用于封装OED的产品，使得封装膜的压敏粘合剂层12设置为与OED 22和基板21接触。此外，金属层13可以设置在压敏粘合剂层12上。
有益效果
本申请提供一种封装膜，该封装膜可以形成用于有效地阻隔水分或氧气从外部进入OED的结构，并且在高温高湿条件下具有优异的保热性。
附图说明
图1和图2是根据本申请的一个示例性实施方案的封装膜的横截面图；以及
图3是根据本申请的一个示例性实施方案的OED的横截面图。
[附图标记]
11：基膜或离型膜
12：压敏粘合剂层
12a：第一层
12b：第二层
13：金属层
21：基板
22：有机电子器件
具体实施方式
下文中，将参考根据本申请的实施例和不根据本申请的比较例更详细地描述本申请，本申请的范围不局限于下面的实施例。
实施例1
添加50g的丁基橡胶(Br068，EXXON)作为衍生自丁烯的聚合物；24g的氢化烃树脂(Eastotac H-100L)作为增粘剂；15g的单官能丙烯酸酯，即，2-(2-乙氧基乙氧基)丙烯酸乙酯，作为式1的化合物；10g的三羟甲基丙烷三丙烯酸酯作为多官能活性能量射线可聚合化合物；和1g的2,2-二甲氧基-1,2-二苯基乙烷-1-酮(Irgacure 651，Ciba)作为自由基引发剂，并将所得混合物用甲苯稀释至固体含量为约15wt％，制得涂布溶液。
用制得的溶液涂布离型PET的离型表面，并将该涂布的产品在100℃的烘箱中干燥15分钟，形成厚度为50μm的压敏粘合剂层，将该压敏粘合剂层与厚度为20μm的铜膜层压，制得封装膜。测量该薄膜样品经2J/cm2的UV射线照射的物理性质。
实施例2
除了用丙烯酸十八酯代替式1的化合物之外，通过与实施例1所述的相同的方法形成封装膜。
实施例3
除了用丙烯酸月桂酯代替式1的化合物之外，通过与实施例1所述的相同的方法形成封装膜。
实施例4
除了用丙烯酸异癸酯代替式1的化合物之外，通过与实施例1所述的相同的方法形成封装膜。
比较例1
除了不包含式1的化合物之外，通过与实施例1所述的相同的方法形成封装膜。
比较例2
除了用甲基丙烯酸月桂酯代替式1的化合物之外，通过与实施例1所述的相同的方法形成封装膜。
比较例3
除了用丙烯酸异冰片酯代替式1的化合物之外，通过与实施例1所述的相同的方法形成封装膜。
试验例1-面板未层压(Non-lamination)
使用辊层压机，将实施例和比较例中形成的任意一个厚度为50μm、尺寸为14cm×9cm的压敏粘合剂层粘附于尺寸为150cm×10cm的0.7T玻璃的中央。使用真空层压机，在25至100℃以及100pa的真空度下，在0.5MPa的压力下，通过垂直压制来层压与制备的试样的尺寸相同的玻璃。通过压敏粘合剂的整个表面上的未层压或气泡产生的程度来确定层压性能，因此，当发生未层压或者产生至少一个直径为3mm以上的气泡时，确定为层压失败。
试验例2-蠕变距离
在厚度为50μm的金属基底的一个表面上形成任意一个实施例和比较例中制备的压敏粘合剂层以制备样品，将该样品以1cm×1cm的粘合面积粘附于玻璃，在85℃下，将500g的重量沿重力方向负载于金属基底1小时，然后测量压敏粘合剂层的蠕变距离。此处，使用铜作为金属基底。当负载重量时，将粘合区域全部蠕变回缩，并因此使样品脱离的情况确定为失败。
[表1]
| 85℃保留，蠕变距离(μm) | 面板层压或未层压 | |
| 实施例1 | 0 | X |
| 实施例2 | 960 | X |
| 实施例3 | 500 | X |
| 实施例4 | 100 | X |
| 比较例1 | 失败 | 层压失败 |
| 比较例2 | 失败 | X |
| 比较例3 | 失败 | 层压失败 |
Claims (18)
1.一种封装膜，包含：
满足通式1的压敏粘合剂层，并且所述压敏粘合剂层包含衍生自丁烯的聚合物、满足式1的化合物和满足式2的多官能活性能量射线可聚合化合物：
[通式1]
d≤1mm
其中，d是当将通过在金属基底的一个表面上形成厚度为50μm的压敏粘合剂层而制备的样品以1cm×1cm的粘合面积粘附于玻璃，并在85℃下将500g的重量沿重力方向负载于所述金属基底1小时时，所述压敏粘合剂层蠕变的蠕变距离，
[式1]
其中，T是具有6至30个碳原子的直链或支链的烷基、烯基或炔基，或者-U-[O-W]n-O-Q，其中，U和W各自独立地是亚烷基或次烷基，Q是烷基、烯基、炔基或芳基，n是0至10的数，
[式2]
其中，R1是氢或具有1至4个碳原子的烷基，n是2以上的整数，X是衍生自具有3至30个碳原子的直链、支链或环状烷基的残基。
2.根据权利要求1所述的封装膜，其中，所述衍生自丁烯的聚合物是丁烯单体的均聚物；丁烯单体与可与其聚合的不同的单体进行共聚而形成的共聚物；使用丁烯单体的反应性低聚物；或它们的混合物。
3.根据权利要求2所述的封装膜，其中，所述可与丁烯单体聚合的单体是异戊二烯、苯乙烯或丁二烯。
4.根据权利要求2所述的封装膜，其中，所述使用丁烯单体的反应性低聚物包括具有反应性官能团的丁烯聚合物，并且该丁烯聚合物与具有反应性官能团的不同的聚合物连接。
5.根据权利要求1所述的封装膜，其中，所述衍生自丁烯的聚合物的含量为60至95重量份，所述满足式1的化合物的含量为5至40重量份。
6.根据权利要求1所述的封装膜，其中，所述衍生自丁烯的聚合物的含量为50至90重量份，所述满足式1的化合物的含量为5至35重量份，所述满足式2的多官能活性能量射线可聚合化合物的含量为5至25重量份。
7.根据权利要求1所述的封装膜，其中，所述压敏粘合剂层还包含增粘剂。
8.根据权利要求7所述的封装膜，其中，所述增粘剂为氢化环烯烃类聚合物。
9.根据权利要求7所述的封装膜，其中，相对于100重量份的聚合物，所述增粘剂的含量为5至100重量份。
10.根据权利要求1所述的封装膜，其中，所述压敏粘合剂层还包含自由基引发剂。
11.根据权利要求10所述的封装膜，其中，所述自由基引发剂为光引发剂或热引发剂。
12.根据权利要求1所述的封装膜，其中，所述压敏粘合剂层还包含水分清除剂。
13.根据权利要求1所述的封装膜，其中，所述压敏粘合剂层具有单层结构或包含两层或更多层的多层结构。
14.根据权利要求1所述的封装膜，还包含：
在所述压敏粘合剂层的一个表面上形成的金属层。
15.根据权利要求14所述的封装膜，其中，所述金属层的热导率为50W/mK以上。
16.根据权利要求1所述的封装膜，其中，当形成为100μm的厚度时，所述压敏粘合剂层在厚度方向的水蒸气透过率(WVTR)为50g/m2·天以下。
17.一种有机电子器件，包括：
基板；
在所述基板上形成的有机电子元件；和
权利要求1所述的封装膜，该封装膜封装所述有机电子元件的整个表面。
18.一种制造有机电子器件的方法，包括：
将权利要求1所述的封装膜施用于其上形成有有机电子元件的基板上，以覆盖该有机电子元件的整个表面；以及
固化所述封装膜。
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