CN106448742B - 半导体装置，测试装置及测试系统 - Google Patents

半导体装置，测试装置及测试系统 Download PDF

Info

Publication number
CN106448742B
CN106448742B CN201510900736.9A CN201510900736A CN106448742B CN 106448742 B CN106448742 B CN 106448742B CN 201510900736 A CN201510900736 A CN 201510900736A CN 106448742 B CN106448742 B CN 106448742B
Authority
CN
China
Prior art keywords
semiconductor device
voltage
test
circuit
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201510900736.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN106448742A (zh
Inventor
马蒂亚斯.Y.G.培尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lijing Jicheng Electronic Manufacturing Co., Ltd.
Original Assignee
Lijing Jicheng Electronic Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lijing Jicheng Electronic Manufacturing Co Ltd filed Critical Lijing Jicheng Electronic Manufacturing Co Ltd
Publication of CN106448742A publication Critical patent/CN106448742A/zh
Application granted granted Critical
Publication of CN106448742B publication Critical patent/CN106448742B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Tests Of Electronic Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN201510900736.9A 2015-08-07 2015-12-09 半导体装置，测试装置及测试系统 Active CN106448742B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-156582 2015-08-07
JP2015156582A JP6097797B2 (ja) 2015-08-07 2015-08-07 半導体装置、テスタ装置及びテスタシステム

Publications (2)

Publication Number Publication Date
CN106448742A CN106448742A (zh) 2017-02-22
CN106448742B true CN106448742B (zh) 2019-11-12

Family

ID=58047794

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510900736.9A Active CN106448742B (zh) 2015-08-07 2015-12-09 半导体装置，测试装置及测试系统

Country Status (3)

Country Link
JP (1) JP6097797B2 (ja)
CN (1) CN106448742B (ja)
TW (1) TWI598602B (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10079067B1 (en) * 2017-09-07 2018-09-18 Winbond Electronics Corp. Data read method and a non-volatile memory apparatus using the same
JP7115939B2 (ja) * 2018-09-04 2022-08-09 エイブリック株式会社 ボルテージレギュレータ
CN111025132B (zh) * 2018-10-09 2022-02-15 瑞昱半导体股份有限公司 系统芯片、以及其内建自我测试电路与自我测试方法
CN112462248A (zh) * 2021-01-06 2021-03-09 浙江杭可仪器有限公司 一种测试信号输出系统及其使用方法
CN115047307B (zh) * 2022-08-17 2022-11-25 浙江杭可仪器有限公司 一种半导体器件老化测试箱
TWI833365B (zh) * 2022-09-23 2024-02-21 英業達股份有限公司 基於分壓電路的測試系統及其方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0688858A (ja) * 1992-09-07 1994-03-29 Advantest Corp 波形取込機能を具備したｉｃ試験装置
JP2003114253A (ja) * 2001-10-03 2003-04-18 Nec Corp 波形測定用半導体集積回路
TW201111807A (en) * 2009-09-30 2011-04-01 Mstar Semiconductor Inc IO circuit calibration method and related apparatus
CN103675633A (zh) * 2012-09-11 2014-03-26 华邦电子股份有限公司 半导体装置及其检测方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05303889A (ja) * 1992-04-22 1993-11-16 Mitsubishi Electric Corp 半導体装置
KR100859832B1 (ko) * 2006-09-21 2008-09-23 주식회사 하이닉스반도체 반도체 메모리 장치의 내부전위 모니터 장치 및 모니터방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0688858A (ja) * 1992-09-07 1994-03-29 Advantest Corp 波形取込機能を具備したｉｃ試験装置
JP2003114253A (ja) * 2001-10-03 2003-04-18 Nec Corp 波形測定用半導体集積回路
TW201111807A (en) * 2009-09-30 2011-04-01 Mstar Semiconductor Inc IO circuit calibration method and related apparatus
CN103675633A (zh) * 2012-09-11 2014-03-26 华邦电子股份有限公司 半导体装置及其检测方法

Also Published As

Publication number Publication date
TWI598602B (zh) 2017-09-11
JP6097797B2 (ja) 2017-03-15
JP2017037687A (ja) 2017-02-16
CN106448742A (zh) 2017-02-22
TW201706616A (zh) 2017-02-16

Similar Documents

Publication Publication Date Title
CN106448742B (zh) 半导体装置，测试装置及测试系统
JP4598645B2 (ja) 試験方法および試験装置
US7603595B2 (en) Memory test circuit and method
KR100556639B1 (ko) 반도체 검사 장치, 반도체 집적 회로 장치, 및 반도체 집적 회로 장치의 검사 방법
KR100832174B1 (ko) 시험 장치 및 제조 방법
KR101891362B1 (ko) 고장 검출 시스템, 취출 장치, 고장 검출 방법, 프로그램 및 기록 매체
US20200393509A1 (en) Processor-based measuring method for testing device under test, and measuring device using same
CN103187102B (zh) 半导体存储器测试方法和半导体存储器
KR20060044786A (ko) 불휘발성 메모리의 시험 방법
JP5206487B2 (ja) 半導体集積回路の制御方法および半導体集積回路
JP4514028B2 (ja) 故障診断回路及び故障診断方法
US11815554B2 (en) Identifying data valid windows
US20110087453A1 (en) Reliability test with monitoring of the results
Hong et al. A programmable memory BIST for embedded memory
KR101034661B1 (ko) 2개의 로딩 메모리를 이용한 메모리 디바이스의 테스트 방법 및 그 장치
JP4952160B2 (ja) 半導体試験装置
US8543877B2 (en) Method of performing a chip burn-in scanning with increased efficiency
JP4472999B2 (ja) 半導体集積回路の試験装置
CN114579382A (zh) 一种多核CPU的memory测试方法
Hii et al. A built in self test scheme for 256Meg sdram
JP2000227459A (ja) 半導体集積回路とそのテスト方法、及びそのテストに使用するプローブ治具
Dawn et al. Flash Memory Die Sort by a Sample Classification Method
JP2002032997A (ja) 半導体メモリ試験方法・半導体メモリ試験装置
JP2008145317A (ja) 半導体試験装置
KR20080068365A (ko) 반도체메모리 테스트시스템의 페일정보 수집장치

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20190923

Address after: Hsinchu Science Industrial Park, Taiwan, China

Applicant after: Lijing Jicheng Electronic Manufacturing Co., Ltd.

Address before: Hsinchu Science Industrial Park, Taiwan, China

Applicant before: Powerflash Technology Corporation

GR01 Patent grant
GR01 Patent grant