CN105845658B - 具有位于其它元件上方的桥式电感器的组件化电源模块 - Google Patents

具有位于其它元件上方的桥式电感器的组件化电源模块 Download PDF

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CN105845658B
CN105845658B CN201610237148.6A CN201610237148A CN105845658B CN 105845658 B CN105845658 B CN 105845658B CN 201610237148 A CN201610237148 A CN 201610237148A CN 105845658 B CN105845658 B CN 105845658B
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inductor
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lead frame
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印健
M·哈里斯
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Abstract

公开了具有位于其它元件上方的桥式电感器的组件化电源模块。电源模块的一实施例包括组件化封装件、配置在封装件内的电源元件和配置在该封装件内且位于电源元件上方的电感器。例如,对于一给定的额定输出功率,与电感器安装在封装件外或电感器与其它元件并排设置的电源模块相比,这样的电源模块可能更小、更有效率、更可靠、运行温度更低。同时对于一给定的尺寸,与电感器安装在封装件外或电感器与其它元件并排设置的电源模块相比,这样的电源模块可能具有更高的额定输出功率。

Description

具有位于其它元件上方的桥式电感器的组件化电源模块
本申请是申请日为2011年3月15日、申请号为201110105798.2且名为“具有位于其它元件上方的桥式电感器的组件化电源模块”申请的分案申请。
优先权声明
本申请要求共同待决的2010年3月16日提交的美国临时专利申请S/N 61/314,536以及2010年6月29日提交的美国临时专利申请61/359,780的优先权;在此整体纳入所有在先申请作为参考。
相关申请资料
本申请与2011年2月25日提交的申请号为13/035,792,名称为“沿两侧或多侧具有电磁干扰(EMI)屏蔽、冷却或同时具有屏蔽和冷却的电源模块(POWER-SUPPLY MODULE WITHELECTROMAGNETIC-INTERFERENCE(EMI)SHIELDING,COOLING,OR BOTH SHIELDING ANDCOOLING,ALONG TWO OR MORE SIDES)”的美国专利申请相关,在此整体纳入此申请作为参考。
概述
电源模块的一个实施例包括封装件、配置于封装件内的电源元件和配置在该封装件内且位于电源元件上方的电感器。例如,对于一给定的额定输出功率,与电感器安装在封装件外或电感器与其它元件并排设置的电源模块相比,这样的电源模块可能更小、更高效、更可靠、运行温度更低。同时对于一给定的尺寸,与电感器安装在封装件外或电感器与其它元件并排设置的电源模块相比,这样的电源模块可能具有更高的额定输出功率。
附图说明
图1是电感器安装为与其它元件并排设置的电源模块的剖面侧视图;
图2是电感器安装在模块封装件上的电源模块的剖面侧视图;
图3A-3B分别为电源模块一实施例的剖面俯视图和侧视图,该电源模块具有安装于模块封装件内并位于其它模块元件上方的电感器;
图4是电源模块另一实施例的剖面俯视图,该电源模块具有安装于模块封装件内并位于其它模块元件上方的电感器;
图5是可在图3A-4所示的电源模块中使用的电感器的一实施例的侧视图;
图6是包括图3A-4所示的电源模块之一的系统的实施例的原理图。
具体实施例
参考附图来描述一个或多个实施例,其中相同的附图标记始终用于表示相同的元件。在以下的描述中,为了便于说明,阐述了许多具体细节以提供对一个或多个实施例的透彻理解。然而显而易见地,一个或多个实施例可不经这些具体细节而实施。在另一些情况下,公知的结构和设备以方框图的形式表示以方便描述一个或多个实施例。
图1是开关电源模块10的剖面侧视图,该开关电源模块10用于向集成电路或其它设备(图1未显示)供电,并且该开关电源模块10包括大部分或全部的电源元件,以使需要安装在该模块所安装的印刷电路板(图1未显示)上的电源的分立元件即使有也非常少。因此,这样的模块可减少布局面积、组装复杂性、元件数量和包含有模块10的系统的成本。
电源模块10包括平台12,安装于平台的控制器14、安装于平台的MOSFET晶体管16、安装于平台的一个或多个电感器18,以及封装件20,该封装件20至少部分地封装平台、控制器、晶体管和电感器。
平台12可以是印刷电路板、引线框、BT基板或任何其它合适的平台。
控制器14可以是任何合适的电源控制器或其它被调整或被编程来控制电源的控制器。控制器底下的引线或焊盘(未图示)可将控制器与平台12的导电焊盘电气连接。或者,控制器14可包括顶部的引线或焊盘,所述引线或焊盘用导线22与平台12的导电焊盘丝焊在一起。控制器14也可以既包括底下焊盘/引线,又包括顶部焊盘/引线。控制器14可以是压铸成型或者由独立于模块20的封装件至少部分地封装。此外,控制器14可以与平台12接触,或者在控制器和平台之间设有热传导物质(例如,导热油脂),用于促进从控制器至平台的热传递,从而通过平台促进控制器的冷却。
晶体管16可以包括高压侧和低压侧开关晶体管,用于驱动电源的一个或多个相。例如,模块10可以在每相包括一对晶体管16,即一个高压侧晶体管和一个低压侧晶体管。晶体管16可以是压铸成型,或者通过与模块封装件20分离的一个或多个封装件至少部分地封装(各别地、分组地或全体地)。晶体管16可以与平台12接触,或者在晶体管和平台之间设有热传导物质,用于促进从晶体管至平台的热传递,从而促进晶体管的冷却。晶体管16可以具有在底部的焊盘,用于电气连接平台12的焊盘,或者晶体管可具有在顶部的焊盘,该焊盘用导线22与平台的焊盘丝焊在一起。晶体管16也可既包括下部焊盘/引线又包括顶部部焊盘/引线。
一个或多个电感器18可以包括电源相电感器和一可选用的滤波电感器。电感器18可以由与模块封装件20分离的一个或多个封装件至少部分地封装(单独地、分组地或全体地),以形成一个或多个电感器模块,或者可不封装电感器。可以由比如铜或铝的合适导电材料制造的引线24和26将电感器18与平台12的导电焊盘电气连接和热耦合,以保持电感器冷却。此外,导热材料可设置在电感器18和平台12之间的间隙28中。
封装件20可以由例如环氧树脂的任何合适材料形成,封装件20可完全覆盖控制器14、晶体管16和电感器18,并且可能完全覆盖平台12,或者留下平台的一部分暴露在外,例如具有焊盘或引线的平台的底部,,以允许外部电气连接到达控制器、晶体管、电感器和可能的其它模块元件。此外,封装件20可以是实心的,这样它能尽量多地填充到所有的未占用空间(例如,位于封装件边界内但没有被控制器14、晶体管15、电感器18和可能的其它电源元件占用的空间),以使模块内的空隙很少或没有。
但是,模块10的一个缺陷是它具有相对低效率的布局,因此对于一给定的输出额定功率可能会具有一个相对大的尺寸,因为在封装件20内存在大量的未占用空间(例如,在控制器14和晶体管16的上方)。此外,低效率的布局可能导致从内部元件到封装件外部的热传递相对较差,从而导致模块10相对较“热”地运行。
模块10的另一个缺陷是对于一给定的模块尺寸,电感器18相对较小。以上每一种情况,模块10的相对低效率的布局限制了电感器18可用的空间。一个较小的电感器18可能会导致较高的电源开关频率,从而导致开关中功率损耗较高。此外,一个较小的电感器18可能有一个相对较薄的绕组,其具有相对较高的电阻电阻,因此可能导致流经电感器的I2R损耗较高。结果,一个较小的电感器18可能导致较低的总功率转换效率和较高的模块10热量输出。并且一个较小的电感器18也可能导致在模块10产生的稳压输出电压上叠加一相对较大的纹波振幅。
图2是一开关电源模块30的剖面侧视图,该开关电源模块30可用于向集成电路或其它设备(图2未显示)供电,同图1所示的模块10一样,该模块也可包括大部分或全部的电源元件,以使需要安装在该模块安装的印刷电路板(图2未显示)上的电源的分立元件即使有也非常少。
同图1所示的电源模块10一样,电源模块30包括平台12,控制器14、MOSFET晶体管16和封装件20,该封装件20至少部分地封装平台、控制器、晶体管。但是不同于模块10的是,模块30包括一个或多个安装在控制器14、晶体管16和封装件20上方的电感器32。
每个电感器32由封装件20(有时称为模块本体)支撑并包括导电引线34和36,导电引线34和36安装于平台12相应的边缘,同时通过相应的熔焊或钎焊接头38和40附着于电感器相应的侧面。并且与图1所示的电感器18一样,电感器32可能由与模块封装件20分离的一个或多个封装件至少部分地被封装(单独地、分组地或全体地),或者不被封装。
此外,热传导材料42(例如,粘合剂或油脂)可设置在每个电感器32和封装件20之间,以将电感器附连至封装件或者促进电感器和封装件之间的热传递。
虽然将电感器32安装于其它元件(例如,控制器14和晶体管16)上方可能会提高模块30的布局效率,且对于一给定的模块尺寸允许电感器更大(或者对于一给定的电感器尺寸,允许模块更小),但是将电感器安装于模块20外可能会增加组装复杂性和模块的成本,可能会限制模块的应用场合的数量,并可能会降低模块的可靠性。例如,将电感器32安装于封装件20外,可能会使电感器颤动。这样的颤动可能会产生嗡嗡声,致使模块30不适合于在“安静”的应用场合使用。此外,随着时间的推移,这样的颤动可能会使模块30发生故障,例如因为造成一个或多个熔焊接头38和40断裂。另外,将电感器32安装于封装件20外可能会使模块30对于某些应用场合而言太高。
图3A和3B分别是电源模块50的一个实施例的剖面俯视图和侧视图,其解决了以上结合图1-2的模块10和30讨论的一些或所有的问题。同模块10和30一样,模块50可用于向集成电路或其它设备(图3A-3B未显示)供电,并可包括大部分或全部的电源元件,以使需要安装在该模块50安装的印刷电路板(图3A-3B未显示)上的电源的分立元件即使有也非常少。
同图1和2的电源模块10和30一样,电源模块50包括平台12,控制器14、MOSFET晶体管16和封装件20,封装件20至少部分地封装平台、控制器和晶体管。但是不同于模块10和30的是,模块50包括一个或多个安装于控制器14和晶体管16上方(也可能在图3A-3B未显示的其它元件之上)并设置在封装件20内的电感器52,有时称其为桥式电感器(在图3A中有两个电感器)。
每个电感器52包括引线54和56,引线54和56安装于平台12的相应边缘。同图1-2的电感器18和32一样,电感器52可能通过与模块封装件20分离的一个或多个封装件至少部分地封装(单独地、分组地或全体地)或者不封装。引线54和56将每个电感器52支撑在控制器14和晶体管16上方,将每个电感器与平台12的相应焊盘电气连接。引线54和56以常规方式附着于电感器,或者可以是形成电感器的一个或多个绕组的延伸。引线54和56可以由低电阻材料(例如为铜)制成,并做得相对较宽,以进一步降低其电阻。例如,引线54和56可以是由铜制成的相对地刚性的平带状引线。
正如上面结合图2的讨论,将电感器52安装于其它元件(例如,控制器14和晶体管16)上方可能提高模块50的布局效率,并对于一给定的模块尺寸允许电感器更大。例如,对于一给定的输出功率,将电感器52安装于其它模块元件上方,可能会使模块50的覆盖面积(footprint)小于模块10的覆盖面积多达50%。并且,对于一给定的模块尺寸,使电感器52更大,能增大模块50的效率和额定输出功率,使输出纹波电压的振幅减小。正如前面结合图2的讨论,一个较大的电感器可以提高模块50的效率和额定功率,这是通过降低开关频率进而减少开关损耗的和减小电感器的绕组电阻进而减少I2R损耗来实现的。基于这些相同的原因,对于一给定的负载电流,较大的电感器可减少模块50产生的热量,对于一给定的额定散热量,一个较大的电感器可允许模块提供更高的负载电流。
此外,将电感器52安装在封装件20内可降低安装复杂性和模块成本并扩展模块的应用场合的数量,并且可提高模块的可靠性。例如,将电感器52安装在封装件20内可降低模块50的安装成本。此外,将电感器52安装在封装件20内可减少或消除电感器颤动,因而可提高电感器连接的可靠性,并允许模块50用于“安静”的场合。另外,将电感器52安装在封装件20内可降低模块50的高度,因而使模块更适于小间隙的应用场合。例如,模块50的一实施例具有的大致尺寸(W×L×H)是17mm×17mm×7.5mm,更常见地,具有大致范围是4mm×4mm×2mm-25mm×25mm×10mm的尺寸。
此外,将电感器52安装在封装件20的一侧面(这里是顶部)附近,可促进模块50的冷却,尤其是因为在模块运行过程中,电感器可能是其中最热的元件。
仍然参考图3A-3B,描述制造模块50的方法的一个实施例。
首先,将控制器14、晶体管16和模块50的其它元件安装在平台12上,元件的底部焊盘焊接于平台的相应焊盘上。
接下来,将元件的顶部焊盘(如果存在的话)与平台12的相应焊盘丝焊连接。
然后,成型电感器52的引线54和56,例如通过将引线焊接于相应的平台的焊盘来将电感器安装在平台12上。
接下来,例如通过环氧树脂注射模制来成型封装件20。
然后,成型模块50的引线(图3A-3B未示出),并对模块进行测试,向客户发货。
仍然参考图3A-3B,设想模块50的替代实施例。例如,结合图1和2的模块10和30描述的上述实施例可应用到模块50。并且,在组装入模块50之前,控制器14、晶体管16、电感器52和其它元件可以被封装或不被封装(例如,使用与用来形成封装件20的材料相似的材料)。此外,封装件20可以仅部分地覆盖电感器52。例如,电感器52可延伸超出封装件20的顶部。另外,虽然描述的是MOSFET晶体管,晶体管16也可以是双极型、IGBJT或者任何其它适合类型的晶体管,或者使用二极管替代一些晶体管(例如,低压侧晶体管)或作为其附加。并且,虽然图3A示出两个电感器52,但模块50可以包括多于或少于两个的电感器。此外,除了控制器14、晶体管16和电感器52之外,模块50还可以包括一些元件,例如一个或多个滤波电容器、反馈电路、补偿电路和信号值设定电路。另外,模块50可省去控制器14、晶体管16和电感器50中的一个或多个。并且,散热器可附着于模块50的一个或多个侧面(例如,顶部)以促进模块的冷却。此外,虽然图中示出引线54和56在平台12上向内弯折,但是引线54和56中的一个或两者都可以向外或向两旁弯折或者根本不弯折。另外,每个电感器52可能有多个或少于两个的引线54和56。此外,电感器52不一定是统一的,可以是围绕公共芯或各自芯绕制,或者共同或单独地封装(在封装件20形成之前),再或者可以为磁耦合或没有磁耦合。此外,模块50可包括与引线54和56分离的安装件,用于将电感器52支撑在其它元件上方。
图4是电源模块60的一实施例的剖面俯视图,该实施例可克服以上结合图1-2的模块10和30讨论的所有问题。同模块10、30和50一样,模块60可用于向集成电路或其它设备(图4未示出)供电,并可包括大部分或全部的电源元件,以使需要安装在该模块60安装的印刷电路板或其他平台(图4未示出)上的电源的分立元件即使有也非常少。
电源模块60包括平台62,平台62包括引线框64、安装于引线框上的印刷电路板66、控制器14和MOSFET晶体管16、一个或多个电感器68(这里用虚线表示两个电感器)和封装件20,封装件20封装平台、控制器、晶体管和电感器的至少一部分。
引线框64可以是任何合适的引线框,可由例如金属的任何合适导电材料制成。
印刷电路板66被配置在引线框64的一部分之上以形成平台62;平台的这种结构允许一些元件(例如,产生相对较少热量的带有许多接头的元件)安装在电路板上,并且其它元件(例如,带有很少接头但产生相对较多热量的元件)直接安装在引线框上以便更好的热传递。印刷电路板66可用常规的方式安装于引线框64上,并在印刷电路板和引线框之间设有热传导物质(例如,导热油脂),以增进热传导。
具有大量的连接焊盘但是产生相对较少热量的控制器14安装于印刷电路板66上。
具有相对很少的连接焊盘,但是产生相对较多的热量晶体管16直接安装于引线框64上,以促进热量从晶体管向模块60的外部传递。在一个实施例中,有四个晶体管16:两个高压侧晶体管和两个低压侧晶体管。低压侧晶体管比高压侧晶体管大,这是因为在一个实施例中,在稳态运行期间,低压侧晶体管比高压侧晶体管传导更高的平均相电流。也就是说,低压侧晶体管在每个切换周期通常比高压侧晶体管导通更长的时间。
与图3A-3B所示的电感器52相似,每个电感器68安装于引线框64上,位于印刷电路板66、控制器14、晶体管16和模块60可能具有的其它元件(未图示出)的上方。
模块60提供一个或多个改进点,这些改进点类似于上述结合图3A-3B的模块50讨论的改进点,并且模块60可通过与上描述的制造模块50的方法相似的方法制造,还有将印刷电路板66安装于引线框64上的附加步骤。
仍然参考图4,设想电源模块60的替代实施例。例如,结合图1和3B的模块10、30和50描述的上述实施例可应用到模块60。此外,虽然印刷电路板66图示为配置在引线框的一部分之上,但是印刷电路板66也可以配置在整个引线框之上。此外,描述为安装在引线框64上的元件(例如,晶体管16)可代之以安装于印刷电路板66上,描述为安装在印刷电路板66上的元件(例如,控制器14)可代之以安装于引线框64上。另外,可以省去印刷电路板66,可将所有元件直接安装于引线框64上;作为备选,可以省去引线框,并将所有元件直接安装于印刷电路板上。
图5是电感器70的一实施例的剖面侧视图,其用于图3A-4所示的电源模块50和60中,替代电感器52和68或者作为其附加。
电感器70具有封装件72(它与模块50和60的封装件20分离),并且有引线74和76,引线74和76是电感器绕组的延伸并具有两个弯折78和80。例如,弯折78和80的角度可在大约30至90度之间。此外,虽然没有图示出,引线74和76也可以以大约90度的角度弯折,以提高电感器70的安装稳定性。此外,虽然仅示出两个引线74和76,然而电感器70也可以具有多于两个的引线(例如,四个引线),以提高电感器的安装稳定性,降低引线电阻等。
仍然参考图5,设想电感器70的替代实施例。例如,结合图1-4的电感器18、32、52和68描述的上述实施例可应用到电感器70。
图6是系统90的一实施例的原理图,该系统包括图3A-4的电源模块50和60的一个或多个实施例。但是为了便于说明,此时讨论的系统90包括图3A-3B的模块50的一个实施例,其中模块50包括降压变压器。
除了模块50,系统90包括负载92,它接收来自模块的经稳压的电压Vout,还包括滤波电容器(C)94。负载92的实例包括例如处理器或存储器的集成电路。
此外,模块50可包括相电流传感器96和反馈电路98。组成传感器96和电路98的元件可安装于平台12(图3B)低于电感器52的位置。
运行时,控制器14响应于电流传感器96和反馈电路98来控制晶体管16,以交替地将输入电压Vin和参考电压(例如,接地)耦合到相电感器52中,其方式是由Vin产生经稳压的电压Vout。电流传感器96允许控制器14平衡各相(每个相各包括一对高-低晶体管16和相应的相电感器52)间的负载电流,并且还能使控制器检测和限制流入负载92的过电流(例如,如果负载短路)。
仍然参考图6,设想系统90的替代实施例。例如,结合图1-5所描述的上述实施例可应用于系统90。此外,虽然描述了降压变压器,但是模块50可包括任何其它类型的电源,例如降压-升压变压器。此外,模块50可包括额外的元件,例如连接于相电感器52和负载92之间的滤波电感器。另外,虽然滤波电容器94被描述为位于模块50外,但是其也可以是模块的一部分。
从前述内容可以理解,虽然为了便于阐述在这里描述了特定实施例,但是不需要偏离所公开内容的精神和范围就可以做出各种改进。并且,针对特定实施例公开的替换方案,即使没有特别说明,也可应用到其它的实施例。

Claims (19)

1.一种电源模块,包括:
具有一侧的平台;
配置在所述平台之上的封装件;
配置在所述封装件内、配置在所述平台的所述一侧上且附连到所述平台的电源元件;以及
具有电感器本体的电感器结构,所述电感器本体配置在所述封装件内、配置在所述平台的所述一侧上且配置在电源元件之上,所述电感器结构也具有配置在所述电感器本体内的电感器并且具有附连到所述电感器本体且附连到所述平台的电感器引线,其中:
所述平台包括引线框和安装于所述引线框上的印刷电路板,其中所述引线框暴露于所述电源模块的外部;
电源元件之一安装于所述引线框上;并且
另一个电源元件安装于所述印刷电路板上,所述电源元件之一被选择为直接安装于所述引线框而不是所述印刷电路板,因为该电源元件之一比所述另一个电源元件产生更多的热量,并且允许热量从所述电源元件之一更好地传递到所述电源模块的外部。
2.根据权利要求1所述的电源模块,其特征在于,所述封装件包括环氧树脂。
3.根据权利要求1所述的电源模块,其特征在于,电源元件之一包括控制器。
4.根据权利要求1所述的电源模块,其特征在于,电源元件之一包括晶体管。
5.根据权利要求1所述的电源模块,其特征在于,电源元件之一包括电阻器。
6.根据权利要求1所述的电源模块,其特征在于,电源元件之一包括电容器。
7.根据权利要求1所述的电源模块,其特征在于,所述引线将电感器本体支撑在电源元件上方。
8.根据权利要求1所述的电源模块,其特征在于,还包括另一个电感器结构,其具有配置在电源元件上方的另一个电感器本体。
9.根据权利要求1所述的电源模块,其特征在于,
电感器本体安装于所述引线框上。
10.根据权利要求1所述的电源模块,其特征在于,
电感器本体安装于所述印刷电路板上。
11.一种包含电源的系统,包括:
电源模块,其包括:
封装件;
具有一侧且配置在所述封装件下方的平台;
配置在所述封装件内、配置在所述平台的所述一侧上并附连到所述平台的电源元件;
电感器本体,所述电感器本体配置在所述封装件内且配置在电源元件上方且在所述平台的所述一侧上;
电感器引线,附连到所述电感器本体并且附连到所述平台,其中:
所述平台包括引线框和安装于所述引线框上的印刷电路板,其中所述引线框暴露于所述电源模块的外部;
电源元件之一安装于所述引线框上;并且
另一个电源元件安装于所述印刷电路板上,所述电源元件之一被选择为直接安装于所述引线框而不是所述印刷电路板,因为该电源元件之一比所述另一个电源元件产生更多的热量,并且允许热量从所述电源元件之一更好地传递到所述电源模块的外部;以及
电源输出节点;以及
与所述电源输出节点连接的装置。
12.根据权利要求11所述的系统,其特征在于,所述装置包括集成电路。
13.根据权利要求12所述的系统,其特征在于,所述集成电路包括处理器。
14.根据权利要求12所述的系统,其特征在于,所述集成电路包括存储器。
15.一种配置电源的方法,包括:
在平台的一侧上将电源元件附连到所述平台;
通过电感器引线将电感器本体附连到所述平台,所述电感器本体配置在电源元件上方且在所述平台的所述一侧上;以及
在所述电感器本体、所述电感器引线、所述电源元件和所述平台之上形成封装件,其中所述平台包括引线框,所述方法进一步包括:
将印刷电路板安装于所述引线框上,其中所述引线框暴露于所述电源模块的外部;
将电源元件之一安装于所述引线框上;
将另一个电源元件安装于所述印刷电路板上;以及
选择所述电源元件之一为直接安装于所述引线框而不是所述印刷电路板,因为该电源元件之一比所述另一个电源元件产生更多的热量,并且允许热量从所述电源元件之一更好地传递到所述电源模块的外部。
16.根据权利要求15所述的方法,其特征在于,附连所述电源元件包括在所述平台上安装元件。
17.根据权利要求15所述的方法,其特征在于,
附连所述电源元件包括在所述平台上安装元件;以及
附连所述电感器本体包括在元件之上将所述电感器本体安装在所述平台上。
18.根据权利要求15所述的方法,其特征在于,形成封装件包括:
将电感器本体和电源元件封装在封装材料中。
19.根据权利要求15所述的方法,其特征在于:
附连所述电感器本体包括在所述电源元件之上通过相应的电感器引线将多个电感器本体附连到所述平台;以及
形成封装件包括在电感器本体和元件上方形成封装件。
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Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10111333B2 (en) 2010-03-16 2018-10-23 Intersil Americas Inc. Molded power-supply module with bridge inductor over other components
US9723766B2 (en) 2010-09-10 2017-08-01 Intersil Americas LLC Power supply module with electromagnetic-interference (EMI) shielding, cooling, or both shielding and cooling, along two or more sides
TWI448226B (zh) * 2010-09-21 2014-08-01 Cyntec Co Ltd 電源轉換模組
DE102011105346A1 (de) * 2011-06-21 2012-12-27 Schweizer Electronic Ag Elektronische Baugruppe und Verfahren zu deren Herstellung
TWI456854B (zh) * 2011-12-14 2014-10-11 Timotion Technology Co Ltd 線性傳動器之電源供應模組及其轉換模組
CN102790513B (zh) * 2012-07-30 2014-12-10 华为技术有限公司 电源模块和电源模块的封装方法
CN102969292B (zh) * 2012-11-08 2015-08-19 华为技术有限公司 集成电源模块
US9506958B2 (en) 2013-01-31 2016-11-29 Illinois Tool Works Inc. Waveform compensation systems and methods for secondary weld component response
US9936579B2 (en) * 2013-02-01 2018-04-03 Apple Inc. Low profile packaging and assembly of a power conversion system in modular form
US20140252541A1 (en) * 2013-03-11 2014-09-11 General Electric Company Systems and methods for power train assemblies
JPWO2015019519A1 (ja) * 2013-08-07 2017-03-02 パナソニックIpマネジメント株式会社 Dc−dcコンバータモジュール
US9711279B2 (en) * 2013-10-28 2017-07-18 Infineon Technologies Austria Ag DC-DC converter assembly with an output inductor accommodating a power stage attached to a circuit board
US9859250B2 (en) * 2013-12-20 2018-01-02 Cyntec Co., Ltd. Substrate and the method to fabricate thereof
US9696739B2 (en) 2014-07-10 2017-07-04 Intersil Americas LLC Sensing a switching-power-supply phase current
US9515014B2 (en) * 2014-10-08 2016-12-06 Infineon Technologies Americas Corp. Power converter package with integrated output inductor
US10333407B2 (en) * 2015-05-06 2019-06-25 Infineon Technologies Austria Ag Power stage packages of a multi-phase DC-DC converter under a coupled inductor
US10855178B2 (en) * 2015-05-29 2020-12-01 Infineon Technologies Austria Ag Discrete power stage transistor dies of a DC-DC converter under an inductor
US10050528B2 (en) * 2015-06-29 2018-08-14 Infineon Technologies Austria Ag Current distribution in DC-DC converters
JP6631905B2 (ja) * 2015-07-28 2020-01-15 ローム株式会社 マルチチップモジュールおよびその製造方法
KR200479975Y1 (ko) 2015-08-19 2016-03-28 윤현진 등산용 스패츠
CN108432113B (zh) * 2016-01-08 2019-07-12 株式会社村田制作所 Dc/dc转换器
WO2017131011A1 (ja) * 2016-01-27 2017-08-03 株式会社村田製作所 インダクタ部品およびその製造方法
CN108604491B (zh) 2016-01-27 2021-09-21 株式会社村田制作所 电感器部件及其制造方法
US10034379B2 (en) * 2016-01-29 2018-07-24 Cyntec Co., Ltd. Stacked electronic structure
JP7081485B2 (ja) 2016-07-07 2022-06-07 株式会社Gsユアサ 車両通信システム
US10256178B2 (en) * 2016-09-06 2019-04-09 Fairchild Semiconductor Corporation Vertical and horizontal circuit assemblies
DE102016119290A1 (de) * 2016-10-11 2018-04-12 HELLA GmbH & Co. KGaA Leistungselektronik mit einem Schaltungsträger und mindestens einer Spule
CN109411454B (zh) * 2017-10-05 2021-05-18 成都芯源系统有限公司 用于多相功率变换器的电路封装
CN107808879A (zh) * 2017-11-20 2018-03-16 深圳顺络电子股份有限公司 一种开关电源模组及其封装方法
CN108022736A (zh) * 2017-12-27 2018-05-11 广州致远电子有限公司 一种微功率电源模块
US10497635B2 (en) 2018-03-27 2019-12-03 Linear Technology Holding Llc Stacked circuit package with molded base having laser drilled openings for upper package
CN108447858A (zh) * 2018-05-15 2018-08-24 深圳市国微电子有限公司 一种电源系统
CN108417570A (zh) * 2018-05-15 2018-08-17 深圳市国微电子有限公司 一种电源模组
WO2019218344A1 (zh) * 2018-05-18 2019-11-21 瑞典爱立信有限公司 电源装置及包括其的印刷电路板装置
WO2020003483A1 (ja) * 2018-06-29 2020-01-02 新電元工業株式会社 電子装置
US11127524B2 (en) * 2018-12-14 2021-09-21 Hong Kong Applied Science and Technology Research Institute Company Limited Power converter
JP7147598B2 (ja) * 2019-01-29 2022-10-05 株式会社デンソー 電源装置
US11024702B2 (en) * 2019-03-04 2021-06-01 Cyntec Co., Ltd. Stacked electronic structure
US11915855B2 (en) * 2019-03-22 2024-02-27 Cyntec Co., Ltd. Method to form multile electrical components and a single electrical component made by the method
US11309233B2 (en) * 2019-09-18 2022-04-19 Alpha And Omega Semiconductor (Cayman), Ltd. Power semiconductor package having integrated inductor, resistor and capacitor
US11270986B2 (en) * 2020-05-18 2022-03-08 Analog Devices, Inc. Package with overhang inductor
JP7469958B2 (ja) * 2020-05-28 2024-04-17 Tdk株式会社 コイル装置
US11844178B2 (en) 2020-06-02 2023-12-12 Analog Devices International Unlimited Company Electronic component
JPWO2022074983A1 (zh) * 2020-10-05 2022-04-14
CN112736043B (zh) * 2020-12-30 2022-09-06 成都芯源系统有限公司 多裸片封装模块及方法
US11744021B2 (en) 2022-01-21 2023-08-29 Analog Devices, Inc. Electronic assembly
US20230335509A1 (en) * 2022-04-14 2023-10-19 Texas Instruments Incorporated Power module package with magnetic mold compound
US20240006259A1 (en) * 2022-06-29 2024-01-04 Texas Instruments Incorporated Integrated circuit with inductor in magnetic package
WO2024147605A1 (ko) * 2023-01-03 2024-07-11 엘지이노텍 주식회사 인덕터 모듈 및 이를 포함하는 인버터 모듈

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101283449A (zh) * 2005-07-01 2008-10-08 金·沃扬 以单个贴装封装实现的完整功率管理系统

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5220489A (en) * 1991-10-11 1993-06-15 Motorola, Inc. Multicomponent integrated circuit package
US5621635A (en) * 1995-03-03 1997-04-15 National Semiconductor Corporation Integrated circuit packaged power supply
US5629241A (en) * 1995-07-07 1997-05-13 Hughes Aircraft Company Microwave/millimeter wave circuit structure with discrete flip-chip mounted elements, and method of fabricating the same
US6049469A (en) 1997-08-20 2000-04-11 Dell Usa, L.P. Combination electromagnetic shield and heat spreader
KR100275541B1 (ko) 1997-12-19 2001-01-15 정선종 인덕터 내경에 커패시터를 배치한 초고주파 공진회로 구조 및그 설계방법
US6310386B1 (en) 1998-12-17 2001-10-30 Philips Electronics North America Corp. High performance chip/package inductor integration
US6274937B1 (en) 1999-02-01 2001-08-14 Micron Technology, Inc. Silicon multi-chip module packaging with integrated passive components and method of making
US6452247B1 (en) 1999-11-23 2002-09-17 Intel Corporation Inductor for integrated circuit
WO2001052598A1 (en) * 2000-01-13 2001-07-19 Sonionmicrotronic Nederland B.V. Packaging and rf shielding for telecoils
US6744114B2 (en) 2001-08-29 2004-06-01 Honeywell International Inc. Package with integrated inductor and/or capacitor
US6541948B1 (en) 2001-12-04 2003-04-01 National Semiconductor Corporation Voltage regulator and method using high density integrated inductors and capacitors for radio frequency suppression
KR100843737B1 (ko) * 2002-05-10 2008-07-04 페어차일드코리아반도체 주식회사 솔더 조인트의 신뢰성이 개선된 반도체 패키지
JP4217438B2 (ja) 2002-07-26 2009-02-04 Fdk株式会社 マイクロコンバータ
JP3906767B2 (ja) * 2002-09-03 2007-04-18 株式会社日立製作所 自動車用電子制御装置
US6998721B2 (en) * 2002-11-08 2006-02-14 Stmicroelectronics, Inc. Stacking and encapsulation of multiple interconnected integrated circuits
US6972965B2 (en) 2003-02-04 2005-12-06 Intel Corporation Method for integrated high Q inductors in FCGBA packages
CN100416815C (zh) * 2003-02-21 2008-09-03 先进互连技术有限公司 包括无源器件的引线框架及其形成方法
JP2004289912A (ja) 2003-03-20 2004-10-14 Nec Tokin Corp 薄型電源装置およびその製造方法
US7119606B2 (en) * 2003-07-10 2006-10-10 Qualcomm, Incorporated Low-power, low-area power headswitch
US20060219436A1 (en) * 2003-08-26 2006-10-05 Taylor William P Current sensor
JP2005123535A (ja) 2003-10-20 2005-05-12 Toshiba Corp 半導体装置
US7060601B2 (en) * 2003-12-17 2006-06-13 Tru-Si Technologies, Inc. Packaging substrates for integrated circuits and soldering methods
CN100386876C (zh) 2004-03-26 2008-05-07 乾坤科技股份有限公司 多层基板堆叠封装结构
US7279391B2 (en) 2004-04-26 2007-10-09 Intel Corporation Integrated inductors and compliant interconnects for semiconductor packaging
US20060018098A1 (en) * 2004-07-22 2006-01-26 Adrian Hill PCB board incorporating thermo-encapsulant for providing controlled heat dissipation and electromagnetic functions and associated method of manufacturing a PCB board
TWI250592B (en) 2004-11-16 2006-03-01 Siliconware Precision Industries Co Ltd Multi-chip semiconductor package and fabrication method thereof
US20060108663A1 (en) * 2004-11-19 2006-05-25 Sanzo Christopher J Surface mount inductor with integrated componentry
US20070072340A1 (en) * 2004-11-19 2007-03-29 Sanzo Christopher J Electronic Device with Inductor and Integrated Componentry
US7582951B2 (en) 2005-10-20 2009-09-01 Broadcom Corporation Methods and apparatus for improved thermal performance and electromagnetic interference (EMI) shielding in leadframe integrated circuit (IC) packages
US8669637B2 (en) 2005-10-29 2014-03-11 Stats Chippac Ltd. Integrated passive device system
US7851257B2 (en) 2005-10-29 2010-12-14 Stats Chippac Ltd. Integrated circuit stacking system with integrated passive components
KR100662848B1 (ko) 2005-12-20 2007-01-02 삼성전자주식회사 인덕터 집적 칩 및 그 제조방법
US7852189B2 (en) 2005-12-30 2010-12-14 Intel Corporation Packaged spiral inductor structures, processes of making same, and systems containing same
JP2007318954A (ja) 2006-05-29 2007-12-06 Fuji Electric Device Technology Co Ltd 超小型dc−dcコンバータモジュール
US7808087B2 (en) 2006-06-01 2010-10-05 Broadcom Corporation Leadframe IC packages having top and bottom integrated heat spreaders
US7636242B2 (en) 2006-06-29 2009-12-22 Intel Corporation Integrated inductor
US7656024B2 (en) 2006-06-30 2010-02-02 Fairchild Semiconductor Corporation Chip module for complete power train
JP2008017540A (ja) 2006-07-03 2008-01-24 Fuji Electric Holdings Co Ltd 超小型電力変換装置
US7531893B2 (en) 2006-07-19 2009-05-12 Texas Instruments Incorporated Power semiconductor devices having integrated inductor
US8064211B2 (en) 2006-08-31 2011-11-22 Tdk Corporation Passive component and electronic component module
JP4354472B2 (ja) * 2006-08-31 2009-10-28 Tdk株式会社 電子部品モジュール
US20080180921A1 (en) * 2007-01-31 2008-07-31 Cyntec Co., Ltd. Electronic package structure
TWI376774B (en) * 2007-06-08 2012-11-11 Cyntec Co Ltd Three dimensional package structure
KR20090012933A (ko) * 2007-07-31 2009-02-04 삼성전자주식회사 반도체 패키지, 스택 모듈, 카드, 시스템 및 반도체패키지의 제조 방법
JP5194625B2 (ja) 2007-08-06 2013-05-08 富士電機株式会社 マイクロ電源モジュール
KR101493865B1 (ko) 2007-11-16 2015-02-17 페어차일드코리아반도체 주식회사 구조가 단순화된 반도체 파워 모듈 패키지 및 그 제조방법
US7884452B2 (en) 2007-11-23 2011-02-08 Alpha And Omega Semiconductor Incorporated Semiconductor power device package having a lead frame-based integrated inductor
US7868431B2 (en) 2007-11-23 2011-01-11 Alpha And Omega Semiconductor Incorporated Compact power semiconductor package and method with stacked inductor and integrated circuit die
US7868599B2 (en) * 2007-11-26 2011-01-11 Texas Instruments Incorporated Method of optimum current blanking time implementation in current sense circuit
US7714419B2 (en) 2007-12-27 2010-05-11 Stats Chippac Ltd. Integrated circuit package system with shielding
TWI355068B (en) * 2008-02-18 2011-12-21 Cyntec Co Ltd Electronic package structure
US20090230519A1 (en) 2008-03-14 2009-09-17 Infineon Technologies Ag Semiconductor Device
US7906371B2 (en) 2008-05-28 2011-03-15 Stats Chippac, Ltd. Semiconductor device and method of forming holes in substrate to interconnect top shield and ground shield
JP5211942B2 (ja) 2008-08-29 2013-06-12 Tdk株式会社 電子部品モジュール及び電子部品モジュールの製造方法
US7718471B1 (en) * 2008-11-12 2010-05-18 White Electronic Designs Corporation Method and apparatus for stacked die package with insulated wire bonds
JP2010129877A (ja) 2008-11-28 2010-06-10 Tdk Corp 電子部品モジュール
US8354740B2 (en) 2008-12-01 2013-01-15 Alpha & Omega Semiconductor, Inc. Top-side cooled semiconductor package with stacked interconnection plates and method
US8168490B2 (en) 2008-12-23 2012-05-01 Intersil Americas, Inc. Co-packaging approach for power converters based on planar devices, structure and method
US8193583B2 (en) 2009-04-29 2012-06-05 Intersil Americas, Inc. Monolithic output stage with vertical high-side PMOS and vertical low-side NMOS interconnected using buried metal, structure and method
JP5646830B2 (ja) 2009-09-02 2014-12-24 ルネサスエレクトロニクス株式会社 半導体装置、半導体装置の製造方法、及びリードフレーム
JP2011058861A (ja) 2009-09-08 2011-03-24 Panasonic Corp 焦電型赤外線検出器
US8213180B2 (en) 2010-01-21 2012-07-03 Broadcom Corporation Electromagnetic interference shield with integrated heat sink
US10111333B2 (en) 2010-03-16 2018-10-23 Intersil Americas Inc. Molded power-supply module with bridge inductor over other components
US9723766B2 (en) 2010-09-10 2017-08-01 Intersil Americas LLC Power supply module with electromagnetic-interference (EMI) shielding, cooling, or both shielding and cooling, along two or more sides
EP2482312A4 (en) 2011-04-29 2012-09-26 Huawei Tech Co Ltd POWER SUPPLY MODULE AND PACKAGING AND INTEGRATION METHOD THEREFOR

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101283449A (zh) * 2005-07-01 2008-10-08 金·沃扬 以单个贴装封装实现的完整功率管理系统

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