CN105826371B - 高压p型横向双扩散金属氧化物半导体场效应管 - Google Patents

高压p型横向双扩散金属氧化物半导体场效应管 Download PDF

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CN105826371B
CN105826371B CN201510003131.XA CN201510003131A CN105826371B CN 105826371 B CN105826371 B CN 105826371B CN 201510003131 A CN201510003131 A CN 201510003131A CN 105826371 B CN105826371 B CN 105826371B
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semiconductor field
oxide semiconductor
metal
draw
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CN105826371A (zh
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张广胜
张森
卞鹏
胡小龙
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CSMC Technologies Corp
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CSMC Technologies Corp
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Priority to CN201510003131.XA priority Critical patent/CN105826371B/zh
Priority to JP2017535885A priority patent/JP6401394B2/ja
Priority to EP15876629.5A priority patent/EP3242329A4/en
Priority to PCT/CN2015/089807 priority patent/WO2016110128A1/zh
Priority to US15/541,661 priority patent/US20180190815A1/en
Priority to KR1020177021628A priority patent/KR101951825B1/ko
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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

本发明公开了一种高压P型横向双扩散金属氧化物半导体场效应管，包括衬底，还包括形成于衬底上的N型横向双扩散金属氧化物半导体场效应管，以及形成于N型横向双扩散金属氧化物半导体场效应管的漏极的P型金属氧化物半导体场效应管；P型金属氧化物半导体场效应管的栅极作为高压P型横向双扩散金属氧化物半导体场效应管的栅极；P型金属氧化物半导体场效应管的漏极作为高压P型横向双扩散金属氧化物半导体场效应管的漏极；N型横向双扩散金属氧化物半导体场效应管的源极作为高压P型横向双扩散金属氧化物半导体场效应管的源极。上述高压P型横向双扩散金属氧化物半导体场效应管的工艺简单且成本较低，并具有耐高压性能。

Description

高压P型横向双扩散金属氧化物半导体场效应管
技术领域
本发明涉及半导体制备技术领域，特别是涉及一种高压P型横向双扩散金属氧化物半导体场效应管。
背景技术
传统的P型横向双扩散金属氧化物半导体场效应管(P type Lateral Double-diffused Metal Oxide Semiconductor field effect transistor，PLDMOS)结构需要以一定长度的低掺杂P型漂移区来实现耐高压，因此在高压NLDMOS(N型横向双扩散金属氧化物半导体场效应管)与PLDMOS高压集成过程中，需要增加一次低掺杂P型区光刻，从而增加了工艺复杂性与工艺成本。图1为传统的PLDMOS的结构示意图。如图1所示，为了实现耐高压以及与高压NLDMOS的集成，在PLDMOS结构中设置有一定长度的低掺杂P型漂移区105。
发明内容
基于此，有必要针对上述问题，提供一种工艺简单且成本较低的可实现器件的耐高压性能的高压P型横向双扩散金属氧化物半导体场效应管。
一种高压P型横向双扩散金属氧化物半导体场效应管，包括衬底，还包括形成于所述衬底上的N型横向双扩散金属氧化物半导体场效应管，以及形成于所述N型横向双扩散金属氧化物半导体场效应管的漏极的P型金属氧化物半导体场效应管；所述P型金属氧化物半导体场效应管的栅极作为所述高压P型横向双扩散金属氧化物半导体场效应管的栅极；所述P型金属氧化物半导体场效应管的漏极作为所述高压P型横向双扩散金属氧化物半导体场效应管的漏极；所述N型横向双扩散金属氧化物半导体场效应管的源极作为所述高压P型横向双扩散金属氧化物半导体场效应管的源极。
在其中一个实施例中，所述衬底为P型衬底。
在其中一个实施例中，所述N型横向双扩散金属氧化物半导体场效应管包括：位于所述衬底上的P阱、第一N阱；位于所述P阱上的第一源极引出区，所述第一源极引出区通过金属引出作为所述N型横向双扩散金属氧化物半导体场效应管的源极；位于所述第一N阱上的场氧化层；从所述P阱表面延伸至所述第一N阱表面的第一栅氧化层；位于所述第一栅氧化层和所述场氧化层的表面的第一多晶硅栅，所述第一多晶硅栅通过金属引出后作为所述N型横向双扩散金属氧化物半导体场效应管的栅极。
在其中一个实施例中，所述第一源极引出区包括第一P型引出区和第一N型引出区；所述第一P型引出区和所述第一N型引出区通过金属进行连接。
在其中一个实施例中，所述P型金属氧化物半导体场效应管包括：位于所述衬底上的第二N阱，所述第二N阱与所述第一N阱相互接触；位于所述第二N阱上的漏极引出区以及第二源极引出区；所述漏极引出区通过金属引出作为所述P型金属氧化物半导体场效应管的漏极；所述第二源极引出区通过金属引出后作为所述P型金属氧化物半导体场效应管的源极；在所述第二N阱的表面且位于所述第二源极引出区和所述漏极引出区之间形成的第二栅氧化层；在所述第二栅氧化层上形成的第二多晶硅栅；所述第二多晶硅栅通过金属引出作为所述P型金属氧化物半导体场效应管的栅极。
在其中一个实施例中，所述第二源极引出区包括第二P型引出区和第二N型引出区，所述第二P型引出区和所述第二N型引出区通过金属连接。
在其中一个实施例中，所述场氧化层从所述第一N阱的表面延伸至所述第二N阱的表面。
上述高压P型横向双扩散金属氧化物半导体场效应管通过在N型横向双扩散金属氧化物半导体场效应管的漏极设置有P型金属氧化性场效应管，能够保证器件在导通时拥有P型金属氧化物半导体场效应管的性能，在关断时通过N型横向双扩散金属氧化物半导体场效应管进行耐压，从而实现高压P型横向双扩散金属氧化物半导体场效应管的耐压性能。上述高压P型横向双扩散金属氧化物半导体场效应管无需在其内部设置低掺杂P型漂移区来实现耐压，因此在集成过程中无需增加光刻层次和注入次数，制备工艺简单且成本较低。
附图说明
图1为传统的高压P型横向双扩散金属氧化物半导体场效应管的结构示意图；
图2为本发明一实施例中的高压P型横向双扩散金属氧化物半导体场效应管的结构示意图；
图3为图2所示本发明实施例中的高压P型横向双扩散金属氧化物半导体场效应管的等效结构。
具体实施方式
为使本发明的目的、特征和优点能够更为明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。在本说明书和附图中，分配给层或区域的参考标记N和P表示这些层或区域分别包括大量电子或空穴。进一步地，分配给N或P的参考标记+和－表示掺杂剂的浓度高于或低于没有这样分配到标记的层中的浓度。在下文的优选实施例的描述和附图中，类似的组件分配有类似的参考标记且该处省略其冗余说明。
一种高压P型横向双扩散金属氧化物半导体场效应管，包括衬底、形成于衬底上的N型横向双扩散金属氧化物半导体场效应管(NLDMOS管)、以及形成于N型横向双扩散金属氧化物半导体场效应管的漏极的P型金属氧化物半导体场效应管(PMOS管)。P型金属氧化物半导体场效应管的栅极作为高压P型横向双扩散金属氧化物半导体场效应管的栅极。P型金属氧化物半导体场效应管的漏极作为高压P型横向双扩散金属氧化物半导体场效应管的漏极。N型横向双扩散金属氧化物半导体场效应管的源极作为高压P型横向双扩散金属氧化物半导体场效应管的源极。
上述高压P型横向双扩散金属氧化物半导体场效应管通过在N型横向双扩散金属氧化物半导体场效应管的漏极设置有P型金属氧化性场效应管，能够保证器件在导通时拥有P型金属氧化物半导体场效应管的性能，在关断时通过N型横向双扩散金属氧化物半导体场效应管进行耐压，从而实现高压P型横向双扩散金属氧化物半导体场效应管的耐压性能。上述高压P型横向双扩散金属氧化物半导体场效应管无需在其内部设置低掺杂P型漂移区来实现耐压，因此在集成过程中无需增加光刻层次和注入次数，制备工艺简单且成本较低。
图2为一实施例中的高压P型横向双扩散金属氧化物半导体场效应管的结构示意图。如图2所示，高压P型横向双扩散金属氧化物半导体场效应管(高压PLDMOS管)包括衬底100、位于衬底100上的N型横向双扩散金属氧化物半导体场效应管(NLDMOS管)200部分以及位于N型横向双扩散书氧化物半导体场效应管200的漏端的P型金属氧化物半导体场效应管(PMOS管)300部分。
在本实施例中，衬底100为P型衬底，且为了在与NLDMOS管集成时能够实现其纵向耐压，衬底100的电阻率通常较大。衬底100的电阻率大小具体需要根据器件要求来进行确定。
NLDMOS管200部分包括：位于衬底100上的P阱202以及第一N阱204；位于P阱202上的第一源极引出区206；位于第一N阱204上的场氧化层208；从P阱202表面延伸至第一N阱204表面的第一栅氧化层210；位于第一栅氧化层210以及场氧化层208表面的第一多晶硅栅212。其中，第一源极引出区206包括第一N型引出区和第一P型引出区，并通过金属连接后引出作为NLDMOS管200的源极，同时也是高压PLDMOS管的源极S。第一多晶硅栅212通过金属引出后作为NLDMOS管200的栅极。P阱202的掺杂浓度高于第一N阱204的掺杂浓度，主要为NLDMOS管200部分提供器件导电沟槽，从而通过其栅极来控制器件的开关。在PLDMOS管中，为保证作为耐压部分的NLDMOS管200保持常开，故将NLDMOS管200的栅极设为高电平。第一N阱204主要为PLDMOS管的耐压区域，在PLDMOS管关断时，能够为器件提供需要的耐压。第一N阱204的长度可以根据PLDMOS管的耐压要求进行设定。第一源极引出区206上的第一P型引出区为P+引出区，而第一N型引出区则为N+引出区。
PMOS管300部分包括：位于衬底100上的第二N阱302；位于第二N阱302上的漏极引出区304以及第二源极引出区306；位于第二N阱302表面且位于漏极引出区304和第二源极引出区306之间的第二栅氧化层308；位于第二栅氧化层308表面的第二多晶硅栅310。其中，第二漏极引出区304通过金属引出作为PMOS管300的漏极，同时也是PLDMOS管的漏极D。第二多晶硅栅310通过金属引出作为PMOS管300的栅极，同时也是PLDMOS管的栅极G。第二源极引出区306包括第二P型引出区和第二N型引出区，并通过金属连接后作为PMOS管300的源极。第二N阱302的掺杂浓度高于第一N阱204的掺杂浓度且与第一N阱204相互接触。在本实施例中，第二N阱302的结深小于第一N阱204的结深。在其他的实施例中，第二N阱302的结深也可以与第一N阱204的结深相同。第二N阱302为PMOS管300的沟道区域。高压PLDMOS管主要通过PMOS管300的栅极来实现关断与开启的控制。在本实施例中，漏极引出区304为P+引出区，而第二源极引出区306中的第二P型引出区为P+引出区，第二N型引出区则为N+引出区。场氧化层208从第一N阱204表面延伸至第二N阱302表面。
图3为图2所示实施例中的高压P型横向双扩散金属氧化物半导体场效应管的等效结构图。为保证NLDMOS管保持常开，将NLDMOS管的栅极设为高电平，从图3中可以看出，NLDMOS_G的开关特性与PMOS一致(同开同关)，从而保证器件只有PMOS管300的栅极G为控制端。PMOS_D为PLDMOS器件漏极，在器件工作时为超高电压；NLDMOS_S为PLDMOS器件的源端。具体地，当高压PLDMOS的栅极G为高电位时，器件关断，器件通过较长的第一N阱204作为漂移区进行耐压；当高压PLDMOS栅极为低电位时，器件导通，器件电流通过第二N阱302后流向第一N阱204区域形成电流通路。
上述高压PLDMOS管通过在NLDMOS管200的漏极设置有PMOS管300，能够保证器件在导通时拥有PMOS管200的性能，在关断时通过NLDMOS管200进行耐压，从而实现高压PLDMOS管的耐压性能。上述高压PLDMOS管无需在其内部设置低掺杂P型漂移区来实现耐压，因此无需在集成过程中增加光刻层次和注入次数，制备工艺简单且成本较低。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (7)

1.一种高压P型横向双扩散金属氧化物半导体场效应管，包括衬底，其特征在于，还包括形成于所述衬底上的N型横向双扩散金属氧化物半导体场效应管，以及形成于所述N型横向双扩散金属氧化物半导体场效应管的漏极的P型金属氧化物半导体场效应管；所述P型金属氧化物半导体场效应管的栅极作为所述高压P型横向双扩散金属氧化物半导体场效应管的栅极；所述P型金属氧化物半导体场效应管的漏极作为所述高压P型横向双扩散金属氧化物半导体场效应管的漏极；所述N型横向双扩散金属氧化物半导体场效应管的源极作为所述高压P型横向双扩散金属氧化物半导体场效应管的源极。
2.根据权利要求1所述的高压P型横向双扩散金属氧化物半导体场效应管，其特征在于，所述衬底为P型衬底。
3.根据权利要求1所述的高压P型横向双扩散金属氧化物半导体场效应管，其特征在于，所述N型横向双扩散金属氧化物半导体场效应管包括：位于所述衬底上的P阱、第一N阱；位于所述P阱上的第一源极引出区，所述第一源极引出区通过金属引出作为所述N型横向双扩散金属氧化物半导体场效应管的源极；位于所述第一N阱上的场氧化层；从所述P阱表面延伸至所述第一N阱表面的第一栅氧化层；位于所述第一栅氧化层和所述场氧化层的表面的第一多晶硅栅，所述第一多晶硅栅通过金属引出后作为所述N型横向双扩散金属氧化物半导体场效应管的栅极。
4.根据权利要求3所述的高压P型横向双扩散金属氧化物半导体场效应管，其特征在于，所述第一源极引出区包括第一P型引出区和第一N型引出区；所述第一P型引出区和所述第一N型引出区通过金属进行连接。
5.根据权利要求3所述的高压P型横向双扩散金属氧化物半导体场效应管，其特征在于，所述P型金属氧化物半导体场效应管包括：位于所述衬底上的第二N阱，所述第二N阱与所述第一N阱相互接触；位于所述第二N阱上的漏极引出区以及第二源极引出区；所述漏极引出区通过金属引出作为所述P型金属氧化物半导体场效应管的漏极；所述第二源极引出区通过金属引出后作为所述P型金属氧化物半导体场效应管的源极；在所述第二N阱的表面且位于所述第二源极引出区和所述漏极引出区之间形成的第二栅氧化层；在所述第二栅氧化层上形成的第二多晶硅栅；所述第二多晶硅栅通过金属引出作为所述P型金属氧化物半导体场效应管的栅极。
6.根据权利要求5所述的高压P型横向双扩散金属氧化物半导体场效应管，其特征在于，所述第二源极引出区包括第二P型引出区和第二N型引出区，所述第二P型引出区和所述第二N型引出区通过金属连接。
7.根据权利要求5所述的高压P型横向双扩散金属氧化物半导体场效应管，其特征在于，所述场氧化层从所述第一N阱的表面延伸至所述第二N阱的表面。
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