JP2018501663A - 高電圧p型横方向二重拡散金属酸化物半導体電界効果トランジスタ - Google Patents
高電圧p型横方向二重拡散金属酸化物半導体電界効果トランジスタ Download PDFInfo
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- JP2018501663A JP2018501663A JP2017535885A JP2017535885A JP2018501663A JP 2018501663 A JP2018501663 A JP 2018501663A JP 2017535885 A JP2017535885 A JP 2017535885A JP 2017535885 A JP2017535885 A JP 2017535885A JP 2018501663 A JP2018501663 A JP 2018501663A
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- effect transistor
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- 230000005669 field effect Effects 0.000 title claims abstract description 99
- 239000004065 semiconductor Substances 0.000 title claims abstract description 98
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 92
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 92
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 15
- 238000000605 extraction Methods 0.000 claims description 34
- 238000009792 diffusion process Methods 0.000 claims description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 239000002253 acid Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
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Abstract
Description
基板と、
基板上に形成されたN型横方向二重拡散金属酸化物半導体電界効果トランジスタと、
N型横方向二重拡散金属酸化物半導体電界効果トランジスタのドレインに形成されたP型金属酸化物半導体電界効果トランジスタと、を備え、
P型金属酸化物半導体電界効果トランジスタのゲートは、高電圧P型横方向二重拡散金属酸化物半導体電界効果トランジスタのゲートとして機能し、P型金属酸化物半導体電界効果トランジスタのドレインは、高電圧P型横方向二重拡散金属酸化物半導体電界効果トランジスタのドレインとして機能し、N型横方向二重拡散金属酸化物半導体電界効果トランジスタのソースは、高電圧P型横方向二重拡散金属酸化物半導体電界効果トランジスタのソースとして機能する。
20 金属電極
100 基板
200 N型横方向二重拡散金属酸化物半導体電界効果トランジスタ(NLDMOSトランジスタ)
202 Pウェル
204 第1のNウェル
206 第1のソース引き出し領域
208 フィールド酸化物層
210 第1のゲート酸化物層
212 第1のポリシリコンゲート
300 P型金属酸化物半導体電界効果トランジスタ(PMOSトランジスタ)
302 第2のNウェル
304 ドレイン引き出し領域
306 第2のソース引き出し領域
308 第2のゲート酸化物層
310 第2のポリシリコンゲート
Claims (15)
- 基板と、
基板上に形成されたN型横方向二重拡散金属酸化物半導体電界効果トランジスタと、
N型横方向二重拡散金属酸化物半導体電界効果トランジスタのドレインに形成されたP型金属酸化物半導体電界効果トランジスタと、を備え、
P型金属酸化物半導体電界効果トランジスタのゲートは、高電圧P型横方向二重拡散金属酸化物半導体電界効果トランジスタのゲートとして機能し、P型金属酸化物半導体電界効果トランジスタのドレインは、高電圧P型横方向二重拡散金属酸化物半導体電界効果トランジスタのドレインとして機能し、N型横方向二重拡散金属酸化物半導体電界効果トランジスタのソースは、高電圧P型横方向二重拡散金属酸化物半導体電界効果トランジスタのソースとして機能する、高電圧P型横方向二重拡散金属酸化物半導体電界効果トランジスタ。 - 前記基板は、P型基板であることを特徴とする、請求項1に記載の高電圧P型横方向二重拡散金属酸化物半導体電界効果トランジスタ。
- 前記基板の抵抗率は、50Ω・cm〜95Ω・cmであることを特徴とする、請求項2に記載の高電圧P型横方向二重拡散金属酸化物半導体電界効果トランジスタ。
- 前記N型横方向二重拡散金属酸化物半導体電界効果トランジスタは、
前記基板上に配置されたPウェルと、
前記基板上に配置された第1のNウェルと、
前記Pウェル上に配置され、かつ金属電極によって引き出されて、前記N型横方向二重拡散金属酸化物半導体電界効果トランジスタの前記ソースとして機能する、第1のソース引き出し領域と、
前記第1のNウェル上に配置されたフィールド酸化物層と、
前記Pウェルの表面から前記第1のNウェルの表面まで延在する第1のゲート酸化物層と、
前記第1のゲート酸化物層および前記フィールド酸化物層の表面に配置され、かつ金属電極によって引き出されて、前記N型横方向二重拡散金属酸化物半導体電界効果トランジスタのゲートとして機能する、第1のポリシリコンゲートと、を備えることを特徴とする、請求項1に記載の高電圧P型横方向二重拡散金属酸化物半導体電界効果トランジスタ。 - 前記Pウェルのドーピング濃度は、1×1012cm−3〜1×1013cm−3であることを特徴とする、請求項4に記載の高電圧P型横方向二重拡散金属酸化物半導体電界効果トランジスタ。
- 前記N型横方向二重拡散金属酸化物半導体電界効果トランジスタの前記ゲートはハイレベルであることを特徴とする、請求項4に記載の高電圧P型横方向二重拡散金属酸化物半導体電界効果トランジスタ。
- 前記第1のソース引き出し領域は、第1のP型引き出し領域および第1のN型引き出し領域を含み、前記第1のN型引き出し領域は、金属電極を介して前記第1のP型引き出し領域に接続されることを特徴とする、請求項4に記載の高電圧P型横方向二重拡散金属酸化物半導体電界効果トランジスタ。
- 前記Pウェルのドーピング濃度は、前記第1のNウェルのドーピング濃度より高いことを特徴とする、請求項4に記載の高電圧P型横方向二重拡散金属酸化物半導体電界効果トランジスタ。
- 前記P型金属酸化物半導体電界効果トランジスタは、
前記基板上に配置され、かつ前記第1のNウェルと接触する、第2のNウェルと、
前記第2のNウェル上に配置され、かつ金属電極によって引き出されて、前記P型金属酸化物半導体電界効果トランジスタの前記ドレインとして機能する、ドレイン引き出し領域と、
前記第2のNウェル上に配置され、かつ金属電極によって引き出されて、前記P型金属酸化物半導体電界効果トランジスタのソースとして機能する、第2のソース引き出し領域と、
前記第2のNウェルの表面に配置され、かつ前記第2のソース引き出し領域と前記ドレイン引き出し領域との間に配置された、第2のゲート酸化物層と、
前記第2のゲート酸化物層上に形成され、かつ金属電極によって引き出されて、前記P型金属酸化物半導体電界効果トランジスタの前記ゲートとして機能する、第2のポリシリコンゲートと、を備えることを特徴とする、請求項4に記載の高電圧P型横方向二重拡散金属酸化物半導体電界効果トランジスタ。 - 前記第2のソース引き出し領域は、第2のP型引き出し領域および第2のN型引き出し領域を含み、前記第2のN型引き出し領域は、金属電極を介して前記第2のP型引き出し領域に接続されることを特徴とする、請求項9に記載の高電圧P型横方向二重拡散金属酸化物半導体電界効果トランジスタ。
- 前記フィールド酸化物層は、前記第1のNウェルの前記表面から前記第2のNウェルの前記表面まで延在することを特徴とする、請求項9に記載の高電圧P型横方向二重拡散金属酸化物半導体電界効果トランジスタ。
- 前記第2のNウェルのドーピング濃度は、前記第1のNウェルのドーピング濃度より高いことを特徴とする、請求項9に記載の高電圧P型横方向二重拡散金属酸化物半導体電界効果トランジスタ。
- 前記第2のNウェルのドーピング濃度は、1×1012cm−3〜1×1013cm−3であることを特徴とする、請求項9に記載の高電圧P型横方向二重拡散金属酸化物半導体電界効果トランジスタ。
- 前記第2のNウェルのウェル深さは、前記第1のNウェルのウェル深さ以下であることを特徴とする、請求項9に記載の高電圧P型横方向二重拡散金属酸化物半導体電界効果トランジスタ。
- 前記第2のNウェルのウェル深さは、4ミクロン〜6ミクロンであることを特徴とする、請求項9に記載の高電圧P型横方向二重拡散金属酸化物半導体電界効果トランジスタ。
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