CN105702685B - 一种阵列基板及其制作方法、显示装置 - Google Patents
一种阵列基板及其制作方法、显示装置 Download PDFInfo
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- CN105702685B CN105702685B CN201610115048.6A CN201610115048A CN105702685B CN 105702685 B CN105702685 B CN 105702685B CN 201610115048 A CN201610115048 A CN 201610115048A CN 105702685 B CN105702685 B CN 105702685B
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- Thin Film Transistor (AREA)
Abstract
本发明提供了一种阵列基板及其制作方法、显示装置。其中,方法包括:在衬底上形成显示区域的TFT结构,及所述GOA区域的TFT结构;在TFT结构上依次形成第一绝缘层、ITO层及光刻胶层;采用半色调掩膜板,对所述光刻胶层进行曝光显影,并对所述ITO层进行刻蚀,形成GOA区域电极层及显示区域电极层;所述GOA区域电极层上剩余光刻胶的厚度大于所述显示区域电极层上剩余光刻胶的厚度;对剩余光刻胶进行灰化处理,以完全去除所述显示区域电极层上的光刻胶,及减薄所述GOA区域电极层上的光刻胶。本发明实施例中光刻胶能够对GOA区域上的过孔形成保护,从而为进一步减小面板的边框以形成TN型窄边框显示面板提供了可能。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种阵列基板及其制作方法、显示装置。
背景技术
随着薄膜晶体管液晶显示器(thin film transistor-liquid crystal display,简称TFT-LCD)的技术发展,特别是小尺寸屏幕对窄边框的要求越来越高,阵列基板行驱动技术(Gate Drive On Array,简称GOA)技术的使用更加频繁。GOA技术可以将栅极驱动电路集成在TFT基板上,减少Gate IC的使用,并减小面板的边框设计,使得面板更加符合技术的发展趋势。
在TN型显示面板的设计过程中,由于其液晶偏转原理的特性,必须将彩膜基板侧ITO电极层利用密封胶内的金Au球与阵列基板侧的像素电极导通。而对于具有GOA设计的TN型面板,GOA区域的驱动电路设计有许多过孔,如图1所示的GOA区域典型的过孔设计,其中101为Gate线金属,102为Data线金属,103为GI/PVX过孔,104为将两层金属导通的ITO。而GOA区域的过孔如果与彩膜基板侧ITO电极层导通会造成显示不良。现有TN型显示面板的设计方法是:使密封胶涂覆位置与GOA电路保留一定距离,如此,就造成了TN型显示面板边框比ADS型产品的边框宽。
发明内容
针对现有技术的缺陷,本发明提供了一种阵列基板及其制作方法、显示装置,能够解决现有技术中GOA区域的过孔容易与彩膜基板侧ITO电极层导通,从而造成显示不良的问题。
第一方面,本发明提供了一种阵列基板的制作方法,所述阵列基板包括显示区域和GOA区域,该方法包括:
在衬底上形成显示区域的薄膜晶体管TFT结构,及所述GOA区域的TFT结构;
在所述显示区域的TFT结构和所述GOA区域的TFT结构上依次形成第一绝缘层、ITO层及光刻胶层;
采用半色调掩膜板,对所述光刻胶层进行曝光显影,并对所述ITO层进行刻蚀,形成GOA区域电极层及显示区域电极层;所述GOA区域电极层上剩余光刻胶的厚度大于所述显示区域电极层上剩余光刻胶的厚度;
对剩余光刻胶进行灰化处理,以完全去除所述显示区域电极层上的光刻胶,及减薄所述GOA区域电极层上的光刻胶;
其中,所述GOA区域电极层通过第一过孔与栅线金属层连接,所述GOA区域电极层通过第二过孔与数据线金属层连接。
优选地,所述采用半色调掩膜板,对所述光刻胶进行曝光显影,并对所述ITO层进行刻蚀,形成GOA区域电极层及显示区域电极层,包括:
采用半色调掩膜板,对所述光刻胶层进行曝光,显影后在所述GOA区域形成光刻胶完全去除区域和光刻胶完全保留区域,在所述显示区域形成光刻胶完全去除区域和光刻胶部分保留区域;
对所述ITO层进行刻蚀,在所述光刻胶完全保留区域形成所述GOA区域电极层,在所述光刻胶部分保留区域形成所述显示区域电极层。
优选地,所述半色调掩膜板包括:所述GOA区域电极层对应的不透光子掩膜板、所述GOA区域除电极层外对应的全透光子掩膜板、所述显示区域电极层对应的半透光子掩膜板以及所述显示区域除电极层外对应的全透光子掩膜板。
优选地,所述方法还包括:
在所述GOA区域电极层的光刻胶上方涂覆密封胶;
其中,所述密封胶用于粘接所述阵列基板与彩膜基板。
优选地,所述在所述显示区域的TFT结构和所述GOA区域的TFT结构上依次形成第一绝缘层、ITO层及光刻胶层,包括:
在所述显示区域的TFT结构和所述GOA区域的TFT结构上形成第一绝缘层;
在所述GOA区域,形成贯穿所述第一绝缘层及栅绝缘层且与栅线金属层接触的第一过孔,及形成贯穿所述第一绝缘层且与所述数据线金属层接触的第二过孔;以及
在所述显示区域,形成贯穿所述第一绝缘层且与源漏极接触的第三过孔;
在所述第一过孔、所述第二过孔、所述第三过孔及所述第一绝缘层上依次形成ITO层及光刻胶层。
优选地,所述显示区域电极层为像素电极。
优选地,所述方法还包括:
采用退火工艺,对所述GOA区域电极层上剩余的光刻胶进行热固化。
第二方面,本发明提供了一种阵列基板,所述阵列基板包括:
GOA区域,包括GOA区域TFT结构,及依次形成于所述GOA区域TFT结构上方的第一绝缘层、第一电极层及第二绝缘层;所述第一电极层通过所述第一绝缘层上的第一过孔与所述GOA区域TFT结构的栅线金属层连接,所述第一电极层通过所述第一绝缘层上的第二过孔与所述GOA区域TFT结构的数据线金属层连接;
显示区域,包括显示区域TFT结构,及依次形成于所述显示区域TFT结构上方的第一绝缘层及第二电极层;所述第二电极层通过所述第一绝缘层上的第三过孔与所述显示区域TFT结构的源漏极连接;
其中,所述第二绝缘层完全覆盖所述第一电极层。
优选地,所述第二绝缘层为光刻胶。
优选地,所述GOA区域的第二绝缘层上方覆盖有密封胶。
优选地,所述第二电极层为像素电极。
第三方面,本发明提供了一种显示装置,包括上述任意一种阵列基板。
由上述技术方案可知,本发明实施例通过半色调掩膜板对光刻胶胶层进行曝光显影,使得阵列基板上的GOA区域电极层剩余光刻胶的厚度大于显示区域电极层上剩余光刻胶的厚度,如此,对剩余光刻胶进行灰化处理后,能够保留GOA区域上方的部分光刻胶,以使光刻胶能够覆盖GOA区域上的过孔,对过孔区域形成保护。进一步地,若将密封胶能够涂覆在GOA区域上后,不会造成过孔与彩膜基板侧的ITO电极层导通,从而为进一步减小面板的边框以形成TN型窄边框显示面板提供了可能。
与现有技术相比,本发明只需使用半色调掩膜板作为ITO Mask,无需增加额外的Mask就能够实现在GOA区域的过孔位置保留光刻胶而作为绝缘层,以隔离GOA区域的过孔与密封胶。
当然,实施本发明的任一产品或方法并不一定需要同时达到以上所述的所有优点。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些图获得其他的附图。
图1是现有技术中GOA区域典型的过孔设计的示意图;
图2是本发明一实施例提供的一种阵列基板的制作方法的流程示意图;
图3是本发明另一实施例提供的阵列基板中形成栅电极层及栅线金属层的示意图;
图4是本发明另一实施例提供的阵列基板中形成栅绝缘层的示意图;
图5是本发明另一实施例提供的阵列基板中形成有源层的示意图;
图6是本发明另一实施例提供的阵列基板中形成源漏电极层及数据线金属层的示意图;
图7是本发明另一实施例提供的阵列基板中形成第一绝缘层的示意图;
图8是本发明另一实施例提供的阵列基板中形成第一过孔、第二过孔及第三过孔的示意图;
图9是本发明另一实施例提供的阵列基板中形成ITO金属层的示意图;
图10是本发明另一实施例提供的阵列基板中形成光刻胶层的示意图;
图11是本发明另一实施例提供的阵列基板中显影后的示意图;
图12是本发明另一实施例提供的阵列基板中形成GOA区域电极层及显示区域电极层的示意图;
图13是本发明另一实施例提供的阵列基板的示意图;
图14是本发明另一实施例提供的阵列基板中形成密封胶的示意图;
图15现有技术中阵列基板与彩膜基板密封的示意图;
图16是本发明另一实施例提供的一种阵列基板的制作方法的流程示意图;
图3~图15中标记说明:1—衬底;2—栅电极层;3—栅线金属层;4—栅绝缘层;5—有源层;6—源漏电极层;7—数据线金属层;8—第一绝缘层;9—ITO金属层;10—光刻胶层;11—GOA区域电极层;12—显示区域电极层;13—密封胶;14—ITO电极层;15—遮光层;16—第二绝缘层。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
图2是本发明一实施例提供的一种阵列基板的制作方法的流程示意图,本实施例中的阵列基板包括显示区域和GOA区域。如图2所示,本实施例中的阵列基板的制作方法具体包括如下步骤:
S201:在衬底上形成显示区域的薄膜晶体管TFT结构,及所述GOA区域的TFT结构。
例如,显示区域的TFT结构可包括:栅电极层、栅绝缘层、有源层及源漏电极层。而GOA区域的TFT结构具体可包括:栅线金属层、栅绝缘层及数据线金属层等。
S202:在所述显示区域的TFT结构和所述GOA区域的TFT结构上依次形成第一绝缘层、ITO层及光刻胶层。
S203:采用半色调掩膜板,对所述光刻胶层进行曝光显影,并对所述ITO层进行刻蚀,形成GOA区域电极层及显示区域电极层;所述GOA区域电极层上剩余光刻胶的厚度大于所述显示区域电极层上剩余光刻胶的厚度。
S204:对剩余光刻胶进行灰化处理,以完全去除所述显示区域电极层上的光刻胶,及减薄所述GOA区域电极层上的光刻胶。
其中,所述GOA区域电极层通过第一过孔与栅线金属层连接,所述GOA区域电极层通过第二过孔与数据线金属层连接。
与现有技术相比,本发明实施例通过半色调掩膜板对光刻胶胶层进行曝光显影,使得阵列基板上的GOA区域电极层剩余光刻胶的厚度大于显示区域电极层上剩余光刻胶的厚度,如此,对剩余光刻胶进行灰化处理后,能够保留GOA区域上方的部分光刻胶,以使光刻胶能够覆盖GOA区域上的过孔如此,若将密封胶能够涂覆在GOA区域上后,不会造成过孔与彩膜基板侧的ITO电极层导通,从而为进一步减小面板的边框以形成TN型窄边框显示面板提供了可能。
本实施例中,所述显示区域电极层可为像素电极。
本实施例中,步骤S203,具体可通过如下步骤实现,包括:
A01、采用半色调掩膜板,对所述光刻胶层进行曝光,显影后在所述GOA区域形成光刻胶完全去除区域和光刻胶完全保留区域,在所述显示区域形成光刻胶完全去除区域和光刻胶部分保留区域。
其中,所述半色调掩膜板包括:所述GOA区域电极层对应的不透光子掩膜板、所述GOA区域除电极层外对应的全透光子掩膜板、所述显示区域电极层对应的半透光子掩膜板以及所述显示区域除电极层外对应的全透光子掩膜板。
可理解地,GOA区域的光刻胶完全保留区域对应不透光子掩膜板,GOA区域的光刻胶完全去除区域对应全透光子掩膜板,显示区域的光刻胶部分保留区域对应半透光子掩膜板,而显示区域的光刻胶完全去除区域对应全透光子掩膜板。
其中,光刻胶部分保留区域是指该区域的光刻胶层在曝光显影后有所减薄。
A02、对所述ITO层进行刻蚀,在所述光刻胶完全保留区域形成所述GOA区域电极层,在所述光刻胶部分保留区域形成所述显示区域电极层。
如此,通过上述步骤,使得GOA区域电极层上的光刻胶厚度大于显示区域电极层上的光刻胶厚度。使得后续对光刻胶进一步进行灰化处理后,能够在GOA区域电极层上保留有光刻胶,将GOA区域的过孔用光刻胶进行隔离。
本实施例中,步骤S202,具体可通过如下步骤实现,包括:
B01:在所述显示区域的TFT结构和所述GOA区域的TFT结构上形成第一绝缘层;
B02:在所述GOA区域,形成贯穿所述第一绝缘层及栅绝缘层且与栅线金属层接触的第一过孔,及形成贯穿所述第一绝缘层且与所述数据线金属层接触的第二过孔;以及
B03:在所述显示区域,形成贯穿所述第一绝缘层且与源漏极接触的第三过孔;
B04:在所述第一过孔、所述第二过孔、所述第三过孔及所述第一绝缘层上依次形成ITO层及光刻胶层。
具体而言,GOA区域设置有至少一个第一过孔和至少一个第二过孔,第一过孔的底部为GOA区域的TFT结构的栅线金属层,第二过孔的底部为GOA区域的TFT结构的数据线金属层。如此,GOA区域电极层上保留有光刻胶,则GOA区域的第一过孔和第二过孔的上方保留有光刻胶。由此可见,由于GOA区域形成有过孔,而光刻胶能够覆盖GOA区域的过孔,从而密封胶涂覆在GOA区域,不会造成过孔与彩膜基板侧的ITO层导通。
进一步地,本实施例中的阵列基板的制作方法在步骤S204之后,还包括图2未出的如下步骤:
S205:采用退火工艺,对所述GOA区域电极层上剩余的光刻胶进行热固化。
进一步地,本实施例中的阵列基板的制作方法还可包括如下步骤:
在所述GOA区域电极层的光刻胶上方涂覆密封胶;
其中,所述密封胶用于粘接所述阵列基板与彩膜基板。
由此可见,本实施例中在阵列基板的GOA区域电极层上进一步涂覆密封胶,以粘贴所述阵列基板与彩膜基板。与现有技术中需在GOA区域及密封胶涂覆区域之间留出200um左右的距离相比,本实施例直接将密封胶涂覆于GOA区域之上,并不会造成过孔与CF侧ITO导通,进一步减小了显示面板的边框。
为了更清楚地说明本发明的技术方案,下面结合各步骤形成的器件结构的剖面示意图说明本发明的一个具体实施例,该实施例中,如图14所示出的最后产品结构所示,阵列基板包括显示区域及GOA区域,当然,阵列基板还可以包括其他结构,在此不再赘述。应该理解,这里示出的结构是示例性的,根据本发明权利要求限定的范围和精神,还可以具有其他结构形式。
如图16所示,该实施例中阵列基板的制作方法可具体包括如下步骤:
S1:在衬底1上形成第一金属层,并刻蚀第一金属层形成显示区域的栅电极层2及GOA区域的栅线金属层3,如图3所示。
一般来说,衬底1可为玻璃、塑料或硅等材料。采用溅射方法沉积如钼Mo、铝/钕Al/Nd、铝/钕/钼Al/Nd/Mo、钼/铝/钕/钼Mo/Al/Nd/Mo、金/钛Au/Ti、铂/钛Pt/Ti等金属或合金形成金属层,并对金属层进行光刻刻蚀,形成栅电极层2及栅线金属层3。
S2:形成覆盖所述栅电极层2、栅线金属层3及衬底1的栅绝缘层4,如图4所示。
举例来说,采用常压化学气相沉积、低压化学气相沉积、等离子辅助体化学气相沉积或溅射等方法,沉积如氧化硅SiOX、氮化硅SiNX、氮氧化硅SiON、氧化铝Al2O3、氧化铪HfO2、氧化锆ZrO2、氧化钛TiO2,,氧化钇Y2O3、氧化镧La2O3、氧化钽Ta2O5等氧化物形成的单层或多层栅绝缘层4。
S3:形成覆盖所述栅绝缘层4的半导体层,并刻蚀该半导体层形成有源层5,如图5所示。
例如,采用溅射、溶胶-凝胶、真空蒸镀、喷涂或喷墨打印等方法,沉积如氧化铟镓锌IGZO、氮氧化锌ZnON,氧化铟锡锌ITZO,氧化锌锡ZTO、氧化锌铟ZIO、氧化铟镓IGO、氧化铝锌锡AZTO等氧化物形成半导体层,并刻蚀半导体层形成有源层5。
S4:在栅绝缘层4及有源层5上形成第二金属层,刻蚀第二金属层形成显示区域的源漏电极层6及GOA区域的数据线金属层7,如图6所示。
具体地,可采用溅射方法沉积如钼Mo、铝/钕Al/Nd、铝/钕/钼Al/Nd/Mo、钼/铝/钕/钼Mo/Al/Nd/Mo、金/钛Au/Ti、铂/钛Pt/Ti等金属或合金形成第二金属层,并对该第二金属层进行光刻刻蚀,形成漏源电极层6及数据线金属层7。
S5:形成覆盖源漏电极层6、数据线金属层7及栅绝缘层4的第一绝缘层8,如图7所示。
具体地,第一绝缘层8可为钝化层,可采用热生长、常压化学气相沉积、低压化学气相沉积、等离子辅助体化学气相淀积、溅射等方法。第一绝缘层8的材料可为PVX。
S6:在GOA区域形成贯穿第一绝缘层8及栅绝缘层4且与栅线金属层3的第一过孔,形成贯穿第一绝缘层8且与数据线金属层7接触的第二过孔,如图8所示。
可理解的是,GOA区域设置有至少一个第一过孔和至少一个第二过孔,第一过孔的底部为GOA区域的TFT结构的栅线金属层4,第二过孔的底部为GOA区域的TFT结构的数据线金属层7。
S7:在显示区域形成贯穿第一绝缘层8且与源漏电极层6接触的第三过孔,如图8所示。
可理解地,显示区域设置有用于将显示区域电极层(如像素电极)与源漏电极层6连接第三过孔,则第三过孔的底部为有漏电极层。
S8:形成覆盖第一绝缘层8、第一过孔、第二过孔及第三过孔的ITO金属层9,如图9所示。
S9:在ITO金属层9上形成光刻胶层10,并采用半色调掩膜板对光刻胶层10进行曝光,如图10所示。
在本实施例中,半色调掩膜板包括GOA区域电极层对应的不透光掩膜板、显示区域电极层对应的半透光掩膜板,以及其他区域对应的全透光掩膜板,如图10所示。半透光掩膜板使得显示区域电极层上的光刻胶在曝光显影后有所减薄,而不透光掩膜板使得GOA区域电极层上的光刻胶在曝光显影后厚度不变,其他区域的光刻胶在曝光显影后则被完全去除。
S10:显影后对ITO金属层9进行刻蚀,形成GOA区域电极层11及显示区域电极层12。
需要说明的是,在本实施例中,显影后GOA区域电极层上方的剩余光刻胶厚度大于显示区域电极层上方的剩余光刻胶厚度,如图11所示,且出GOA区域电极层及显示区域电极层外,其他区域的光刻胶均被完全去除。
进一步地,对ITO金属层9进行湿法刻蚀,形成GOA区域电极层11及显示区域电极层12,如图12所示。
S11:对剩余光刻胶进行灰化,完全去除显示区域电极层12上方的光刻胶,且减薄GOA区域电极层11上方的光刻胶,如图13所示。
如此,在GOA区域会保留一层完全覆盖GOA区域电极层的光刻胶。
S12:在GOA区域的光刻胶上方涂覆密封胶13,以粘接阵列基板及彩膜基板,如图14所示。
如图14所示,密封胶13中包含有金Au球,而彩膜基板对应密封胶13的部分包括有ITO电极层14及遮光层15。
如图15所示的现有技术中密封胶涂覆位置,与GOA区域间隔一定的距离,使得显示面板边框较宽。因此,与现有技术相比,如图14所示,本实施例提出的阵列基板的制作方法将密封胶13直接涂覆于GOA区域电极层上的光刻胶上方,能够大大减小显示面板边框的宽度,有利于形成TN型的窄边框面板。
本发明另一实施例提供了一种阵列基板,如图13所示,该实施例中的阵列基板包括:GOA区域和显示区域。其中:
GOA区域,包括GOA区域TFT结构,及依次形成于所述GOA区域TFT结构上方的第一绝缘层8、第一电极层11及第二绝缘层16;所述第一电极层11通过所述第一绝缘层8上的第一过孔与所述GOA区域TFT结构的栅线金属层3连接,所述第一电极层11通过所述第一绝缘层8上的第二过孔与所述GOA区域TFT结构的数据线金属层7连接。
显示区域,包括显示区域TFT结构,及依次形成于所述显示区域TFT结构上方的第一绝缘层8及第二电极层12;所述第二电极层12通过所述第一绝缘层8上的第三过孔与所述显示区域TFT结构的源漏极6连接。
其中,所述第二绝缘层16完全覆盖所述第一电极层。
其中,所述第二电极层12为像素电极。
由此可见,本实施例通过在GOA区域电极层的上方形成第二绝缘层,以使第二绝缘层能够覆盖GOA区域上的过孔。如此,若将密封胶能够涂覆在GOA区域上后,不会造成过孔与彩膜基板侧的ITO电极层导通,从而为进一步减小面板的边框以形成TN型窄边框显示面板提供了可能。
在本发明一个优选的实施例中,上述第二绝缘层16可为光刻胶。
如图14所示,在本发明另一实施例中,所述GOA区域的第二绝缘层16上方覆盖有密封胶13,用于粘接阵列基板及彩膜基板。
另外,本发明实施例所提供的阵列基板可由上述任意一种阵列基板的制作方法制作得到,在此不再详述。
基于同样的发明构思,本发明另一实施例提供了一种包括上述任意一种阵列基板的显示装置,该显示装置可以为:液晶显示面板、手机、平板电脑、电视机、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。该显示装置由于包括上述任意一种阵列基板的显示装置,因而可以解决同样的技术问题,并取得相同的技术效果。
在本发明的描述中,需要说明的是,术语“上”、“下”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本发明中的具体含义。
还需要说明的是,在本文中,诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下,由语句“包括一个……”限定的要素,并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
以上实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。
Claims (7)
1.一种阵列基板的制作方法,所述阵列基板包括显示区域和GOA区域,其特征在于,该方法包括:
在衬底上形成显示区域的薄膜晶体管TFT结构,及所述GOA区域的TFT结构;
在所述显示区域的TFT结构和所述GOA区域的TFT结构上依次形成第一绝缘层、ITO层及光刻胶层;
采用半色调掩膜板,对所述光刻胶层进行曝光显影,并对所述ITO层进行刻蚀,形成GOA区域电极层及显示区域电极层;所述GOA区域电极层上剩余光刻胶的厚度大于所述显示区域电极层上剩余光刻胶的厚度;
对剩余光刻胶进行灰化处理,以完全去除所述显示区域电极层上的光刻胶,及减薄所述GOA区域电极层上的光刻胶;
其中,所述GOA区域电极层通过第一过孔与栅线金属层连接,所述GOA区域电极层通过第二过孔与数据线金属层连接。
2.根据权利要求1所述的方法,其特征在于,所述采用半色调掩膜板,对所述光刻胶进行曝光显影,并对所述ITO层进行刻蚀,形成GOA区域电极层及显示区域电极层,包括:
采用半色调掩膜板,对所述光刻胶层进行曝光,显影后在所述GOA区域形成光刻胶完全去除区域和光刻胶完全保留区域,在所述显示区域形成光刻胶完全去除区域和光刻胶部分保留区域;
对所述ITO层进行刻蚀,在所述光刻胶完全保留区域形成所述GOA区域电极层,在所述光刻胶部分保留区域形成所述显示区域电极层。
3.根据权利要求2所述的方法,其特征在于,所述半色调掩膜板包括:所述GOA区域电极层对应的不透光子掩膜板、所述GOA区域除电极层外对应的全透光子掩膜板、所述显示区域电极层对应的半透光子掩膜板以及所述显示区域除电极层外对应的全透光子掩膜板。
4.根据权利要求1-3中任一项所述的方法,其特征在于,所述方法还包括:
在所述GOA区域电极层的光刻胶上方涂覆密封胶;
其中,所述密封胶用于粘接所述阵列基板与彩膜基板。
5.根据权利要求1所述的方法,其特征在于,所述在所述显示区域的TFT结构和所述GOA区域的TFT结构上依次形成第一绝缘层、ITO层及光刻胶层,包括:
在所述显示区域的TFT结构和所述GOA区域的TFT结构上形成第一绝缘层;
在所述GOA区域,形成贯穿所述第一绝缘层及栅绝缘层且与栅线金属层接触的第一过孔,及形成贯穿所述第一绝缘层且与所述数据线金属层接触的第二过孔;以及
在所述显示区域,形成贯穿所述第一绝缘层且与源漏极接触的第三过孔;
在所述第一过孔、所述第二过孔、所述第三过孔及所述第一绝缘层上依次形成ITO层及光刻胶层。
6.根据权利要求1所述的方法,其特征在于,所述显示区域电极层为像素电极。
7.根据权利要求1所述的方法,其特征在于,所述方法还包括:
采用退火工艺,对所述GOA区域电极层上剩余的光刻胶进行热固化。
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JP5927873B2 (ja) * | 2011-12-01 | 2016-06-01 | 三菱電機株式会社 | 画像検出器 |
CN103022055A (zh) * | 2012-12-28 | 2013-04-03 | 北京京东方光电科技有限公司 | 一种阵列基板及制备方法、显示装置 |
KR102081107B1 (ko) * | 2013-05-30 | 2020-02-25 | 엘지디스플레이 주식회사 | 박막트랜지스터 어레이 기판 및 그의 제조방법 |
CN104658981B (zh) * | 2015-03-17 | 2018-08-07 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
CN105702685B (zh) * | 2016-03-01 | 2018-09-04 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
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CN102902095A (zh) * | 2012-10-09 | 2013-01-30 | 京东方科技集团股份有限公司 | 一种液晶装置及其制造方法 |
CN104538413A (zh) * | 2015-02-03 | 2015-04-22 | 重庆京东方光电科技有限公司 | 阵列基板及其制作方法、显示装置 |
CN105280649A (zh) * | 2015-09-17 | 2016-01-27 | 深圳市华星光电技术有限公司 | 阵列基板、显示装置及阵列基板的制备方法 |
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