CN107170757B - 一种阵列基板及其制作方法 - Google Patents

一种阵列基板及其制作方法 Download PDF

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CN107170757B
CN107170757B CN201710377877.6A CN201710377877A CN107170757B CN 107170757 B CN107170757 B CN 107170757B CN 201710377877 A CN201710377877 A CN 201710377877A CN 107170757 B CN107170757 B CN 107170757B
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CN107170757A (zh
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雍玮娜
徐向阳
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TCL Huaxing Photoelectric Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to PCT/CN2017/089617 priority patent/WO2018214210A1/zh
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Abstract

本发明提供一种阵列基板及其制作方法，所述阵列基板包括显示区域和非显示区域，该非显示区域包括GOA区域，该GOA区域从下至上依次形成第一金属层、绝缘层、第二金属层和保护层；其中，第二金属层通过过孔与第一金属层连接，保护层覆盖第二金属层，用于保护GOA区域的电路免受腐蚀。本发明的阵列基板及其制作方法，第二金属层通过过孔与第一金属层直接连接，并在该第二金属层上形成保护层，避免了金属与框胶的直接接触，从而使得阵列基板上的GOA区域的电路免受腐蚀，提高面板的生产良率和使用性能。

Description

一种阵列基板及其制作方法
技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板及其制作方法。
背景技术
薄膜晶体管显示器(Thin Film Transistor Liquid Crystal Display，TFT-LCD)的发展趋势势必为超窄边框、超低成本。为了实现这样的目的，已经有越来越多的面板厂引入了GOA(Gate driver On Array，阵列基板行驱动)技术，即直接将闸极驱动电路制作在阵列基板上。
但随着窄边框和高分辨率面板的发展，GOA区电路设计占用显示区两侧的面积越来越多，导致框胶可占用的面积不断缩减，最终不可避免的占到GOA区电路上。而GOA区电路由于信号的传递，会设计大量的过孔，对于面板下侧阵列基板而言，每一处过孔均有ITO处在最上层，用于连接不同层上的信号线，成盒后就会与框胶直接接触。而目前市面上的框胶材料，应用于面板后，在经过高温高湿的测试阶段，均会因吸水性或粘着性问题，导致框胶下GOA电路区的ITO出现腐蚀现象，最终造成面板出现显示异常等失效模式，影响面板的生产良率和使用性能。
故，有必要提供一种阵列基板及其制作方法，以解决现有技术所存在的问题。
发明内容
本发明的目的在于提供一种阵列基板及其制作方法，可以避免阵列基板上的GOA电路区的ITO出现腐蚀现象，提高面板的生产良率和使用性能。
本发明提供一种阵列基板，包括显示区域和非显示区域，所述非显示区域包括GOA区域，所述GOA区域从下至上依次形成第一金属层、绝缘层、第二金属层和保护层；其中，
所述第二金属层通过过孔与所述第一金属层连接，所述保护层覆盖所述第二金属层，用于保护所述GOA区域的电路免受腐蚀。
在本发明的阵列基板中，所述第一金属层为栅极金属层，所述绝缘层为栅极绝缘层，所述第二金属层为源漏极金属层，所述保护层为钝化层。
在本发明的阵列基板中，在所述绝缘层和所述第二金属层之间还形成有源层。
在本发明的阵列基板中，所述过孔贯穿所述绝缘层。
在本发明的阵列基板中，所述第二金属层延伸至所述过孔，并与所述第一金属层连接。
在本发明的阵列基板中，所述保护层的厚度为1-2微米。
依据本发明的上述目的，还提供一种阵列基板的制作方法，其包括：
在基板的GOA区域上依次形成第一金属层、绝缘层；
在所述绝缘层形成过孔，所述过孔的底部为所述第一金属层；
在所述绝缘层上形成第二金属层，所述第二金属层通过所述过孔与所述第一金属层连接；以及
在所述第二金属层上形成保护层，所述保护层覆盖所述第二金属层，用于保护所述GOA区域的电路免受腐蚀。
在本发明的阵列基板的制作方法中，在所述绝缘层与所述第二金属层之间还形成有源层。
在本发明的阵列基板的制作方法中，所述第一金属层为栅极金属层，所述绝缘层为栅极绝缘层，所述第二金属层为源漏极极金属层，所述保护层为钝化层。
在本发明的阵列基板的制作方法中，所述第二金属层延伸至所述过孔，并与所述第一金属层连接。
本发明的阵列基板及其制作方法，第二金属层通过过孔与第一金属层直接连接，并在该第二金属层上形成保护层，避免了金属与框胶的直接接触，从而使得阵列基板上的GOA区域的电路免受腐蚀，提高面板的生产良率和使用性能。
为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
图1为本发明优选实施例提供的阵列基板的结构示意图；
图2为本发明优选实施例提供的阵列基板的GOA区域的膜层结构示意图；
图3为本发明优选实施例提供的阵列基板的制作方法的流程示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
参阅图1，图1为本发明优选实施例提供的阵列基板的结构示意图。如图1所示，本优选实施例的阵列基板，包括显示区域101和非显示区域(图中未标示)，该非显示区域包括GOA区域102。其中，显示区域101上交叉设置有数据线1012和扫描线1011；GOA区域102设置在显示区域101两侧，该GOA区域101上集成有GOA电路，该GOA电路包括多个GOA单元1021，用于输出扫描信号，该扫描信号输出至阵列基板的显示区域101，用于驱动显示区域101中像素的开启或关闭。
特别地，在制作显示面板时，通常会在阵列基板上粘贴框胶，随着窄边框和高分辨率面板的发展，框胶不可避免的会粘贴在
GOA区域102上，本发明通过改变阵列基板上GOA区域102的膜层结构，从而避免了框胶与用于传递信号的金属线的直接接触，使得阵列基板上的GOA区域的电路免受腐蚀，提高面板的生产良率和使用性能。
下面对阵列基板的GOA区域的膜层结构进行详细的描述。参阅图2，图2为本发明优选实施例提供的阵列基板的GOA区域的膜层结构示意图。如图2所示，本优选实施例提供的阵列基板，在GOA区域上，从下至上依次形成第一金属层201、绝缘层202、第二金属层203和保护层204；其中，该第二金属层203通过过孔205(图中虚线框标示的区域即是过孔所在的区域)与该第一金属层201连接，该保护层204覆盖第二金属层203，用于保护该GOA区域的电路免受腐蚀。
进一步的，在该绝缘层202和该第二金属层203之间还形成有源层206，该过孔205贯穿绝缘层202。
具体而言，该第一金属层201形成在一基板200上，该基板200可以是玻璃基板，其中，该玻璃基板材质均匀，具有高透明度和低反射率，并且有好的热稳定性，从而能在多次高温工艺之后保持性质稳定。本优选实施例不对基板200进行限制，在制作阵列基板时，工艺人员可以根据具体需要选择基板200。
其中，第一金属层201可以是多层金属形成的金属化合物导电层。该第一金属层201通常通过气相沉积技术形成，然后经过蚀刻工艺等形成各种信号线。
绝缘层202覆盖在第一金属层201之上，该绝缘层202可以为一层，其可由氧化物、氮化物或者氮氧化合物形成。当然，为了进一步提高膜层的质量，绝缘层202还可以是两层。
有源层206形成在绝缘层202之上，为非晶硅层或多晶硅层。
第二金属层203形成在有源层206之上，该第二金属层203通常通过气相沉积技术形成，然后经过蚀刻工艺等形成各种信号线。需要说明的是，在阵列基板的GOA区域上，为了减小电阻，常常需要将用于传递同一信号的信号线设置在不同膜层上，故需要通过过孔将用于传递同一信号的信号线连接起来。
具体地，第二金属层203延伸至该过孔205，并与第一金属层201连接，从而将用于传递同一信号且位于不同膜层上信号线连接起来。
该保护层204形成在第二金属层203之上。需要说明的是，该保护层204形成后将直接与框胶接触，由于保护层204在阵列基板中不参与任何信号的传递，可以保护阵列基板的GOA区域上的电路免受腐蚀。进一步的，该保护层204的厚度为1-2微米。
本优选实施例中的阵列基板，该第一金属层201为栅极金属层，该绝缘层202为栅极绝缘层，该第二金属层203为源漏极金属层，该保护层204为钝化层。
本优选实施例的阵列基板，第二金属层通过过孔与第一金属层直接连接，并在该第二金属层上形成保护层，避免了金属与框胶的直接接触，从而使得阵列基板上的GOA区域的电路免受腐蚀，提高面板的生产良率和使用性能。
本发明还提供一种阵列基板的制作方法，参阅图3，图3为本发明优选实施例提供的阵列基板的制作方法的流程示意图。如图3所示，该方法包括以下步骤：
步骤S301，在基板的GOA区域上依次形成第一金属层、绝缘层；
步骤S302，在所述绝缘层中形成过孔，所述过孔的底部为所述第一金属层；
步骤S303，在所述绝缘层上形成第二金属层，所述第二金属层通过所述过孔与所述第一金属层连接；以及，
步骤S304，在所述第二金属层上形成保护层，所述保护层覆盖所述第二金属层，用于保护所述GOA区域的电路免受腐蚀。
进一步的，在该绝缘层与该第二金属层之间还形成有源层。
具体而言，该第一金属层形成在一基板上，该基板可以是玻璃基板，其中，该玻璃基板材质均匀，具有高透明度和低反射率，并且有好的热稳定性，从而能在多次高温工艺之后保持性质稳定。本优选实施例不对基板进行限制，在制作阵列基板时，工艺人员可以根据具体需要选择基板。
其中，第一金属层可以是多层金属形成的金属化合物导电层。该第一金属层通常通过气相沉积技术形成，然后经过蚀刻工艺等形成各种信号线。
绝缘层覆盖在第一金属层之上，该绝缘层可以为一层，其可由氧化物、氮化物或者氮氧化合物形成。当然，为了进一步提高膜层的质量，绝缘层还可以是两层。
有源层形成在绝缘层之上，为非晶硅层或多晶硅层。
第二金属层形成在有源层之上，该第二金属层通常通过气相沉积技术形成，然后经过蚀刻工艺等形成各种信号线。需要说明的是，在阵列基板的GOA区域上，为了减小电阻，常常需要将用于传递同一信号的信号线设置在不同膜层上，故需要通过过孔将用于传递同一信号的信号线连接起来。
具体地，第二金属层延伸至该过孔，并与第一金属层连接，从而将用于传递同一信号且位于不同膜层上信号线连接起来。
该保护层形成在第二金属层之上。需要说明的是，该保护层形成后将直接与框胶接触，由于保护层在阵列基板中不参与任何信号的传递，可以保护阵列基板的GOA区域上的电路免受腐蚀。进一步的，该保护层的厚度为1-2微米。
本优选实施例中的阵列基板的制作方法，该第一金属层为栅极金属层，该绝缘层为栅极绝缘层，该第二金属层为源漏极金属层，该保护层为钝化层。
本发明的阵列基板及其制作方法，第二金属层通过过孔与第一金属层直接连接，并在该第二金属层上形成保护层，避免了金属与框胶的直接接触，从而使得阵列基板上的GOA区域的电路免受腐蚀，提高面板的生产良率和使用性能。
综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (9)

1.一种阵列基板，包括显示区域和非显示区域，所述非显示区域包括GOA区域，其特征在于，所述GOA区域从下至上依次形成第一金属层、绝缘层、第二金属层和保护层；其中，
所述第二金属层通过过孔与所述第一金属层连接，所述保护层覆盖所述第二金属层，用于保护所述GOA区域的电路免受腐蚀；所述第一金属层为栅极金属层，所述绝缘层为栅极绝缘层，所述第二金属层为源漏极金属层，所述保护层为钝化层。
2.根据权利要求1所述的阵列基板，其特征在于，在所述绝缘层和所述第二金属层之间还形成有源层。
3.根据权利要求2所述的阵列基板，其特征在于，所述过孔贯穿所述绝缘层。
4.根据权利要求1所述的阵列基板，其特征在于，所述第二金属层延伸至所述过孔，并与所述第一金属层连接。
5.根据权利要求1所述的阵列基板，其特征在于，所述保护层的厚度为1-2微米。
6.一种阵列基板的制作方法，其特征在于，包括：
在基板的GOA区域上依次形成第一金属层、绝缘层；
在所述绝缘层形成过孔，所述过孔的底部为所述第一金属层；
在所述绝缘层上形成第二金属层，所述第二金属层通过所述过孔与所述第一金属层连接；以及
在所述第二金属层上形成保护层，所述保护层覆盖所述第二金属层，用于保护所述GOA区域的电路免受腐蚀，所述保护层为钝化层。
7.根据权利要求6所述的阵列基板的制作方法，其特征在于，在所述绝缘层与所述第二金属层之间还形成有源层。
8.根据权利要求6所述的阵列基板的制作方法，其特征在于，所述第一金属层为栅极金属层，所述绝缘层为栅极绝缘层，所述第二金属层为源漏极极金属层。
9.根据权利要求6至8任一项所述的阵列基板的制作方法，其特征在于，所述第二金属层延伸至所述过孔，并与所述第一金属层连接。
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