CN102902095A - 一种液晶装置及其制造方法 - Google Patents

一种液晶装置及其制造方法 Download PDF

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CN102902095A
CN102902095A CN2012103808336A CN201210380833A CN102902095A CN 102902095 A CN102902095 A CN 102902095A CN 2012103808336 A CN2012103808336 A CN 2012103808336A CN 201210380833 A CN201210380833 A CN 201210380833A CN 102902095 A CN102902095 A CN 102902095A
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protective layer
insulating protective
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metal bus
crystal apparatus
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CN102902095B (zh
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张玉婷
吕敬
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BOE Technology Group Co Ltd
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Abstract

本发明公开了一种液晶装置，涉及液晶显示领域。所述液晶装置包括：下基板，设置在所述下基板上方的栅层金属总线、栅绝缘层、源漏金属总线、第一绝缘保护层；所述栅层金属总线与所述源漏金属总线通过透明电极ITO连接；在所述第一绝缘保护层的上方设置有第二绝缘保护层，所述第二绝缘保护层覆盖所述透明电极ITO；封框胶的下部与所述第二绝缘保护层相粘接，上部与上基板相粘接。所述液晶装置及其制造方法，通过在液晶装置的绝缘保护层的上方设置第二绝缘保护层，一方面可以有效保护金属电极免遭封框胶腐蚀，便于实现窄边框，另一方面降低了封框胶的高度，使其更易固化，减少了液晶分子被污染的概率。

Description

一种液晶装置及其制造方法
技术领域
本发明涉及液晶显示技术领域，特别涉及一种液晶装置及其制造方法。
背景技术
公开号为CN1996115的发明专利公开了一种UV硬化方法，该方法通过在阵列基板的下方设置反射板，实现了在彩膜基板一侧照射紫外线以使封框胶固化。
授权公告号为CN202083862的实用新型专利公开了一种封框胶涂布装置，该装置包含UV照射部件，从而可以照射从封框胶喷嘴喷出的封框胶，使部分封框胶预固化，降低了后续的封框胶固化过程中封框胶与液晶分子反应的可能性。
上述方案得到的液晶装置的结构如图1所示，其中，为了防静电，在边框附近，部分栅层金属总线与部分源漏金属总线需要通过透明电极ITO连接。上述方案的缺陷在于，封框胶固化过程中可能腐蚀到液晶装置边框附近的金属电极，即透明电极ITO；并且，在窄边框电视产品中，要求封框胶尽可能靠近显示区域，因此，更加增大了封框胶腐蚀金属电极的风险。
发明内容
（一）要解决的技术问题
本发明要解决的技术问题是：提供一种液晶装置及其制造方法，以避免封框胶腐蚀到液晶装置边框附近的金属电极。
（二）技术方案
为解决上述技术问题，本发明提供一种液晶装置，包括：下基板，设置在所述下基板上方的栅层金属总线、栅绝缘层、源漏金属总线、第一绝缘保护层；所述栅层金属总线与所述源漏金属总线通过透明电极ITO连接；
在所述第一绝缘保护层的上方设置有第二绝缘保护层，所述第二绝缘保护层覆盖所述透明电极ITO；
封框胶的下部与所述第二绝缘保护层相粘接，上部与上基板相粘接。
其中，所述第二绝缘保护层位于所述液晶装置的显示区域的外围。
其中，所述下基板为阵列基板中的玻璃基板。
其中，所述上基板为彩膜基板中的玻璃基板。
其中，所述液晶装置为窄边框液晶装置。
本发明还提供一种液晶装置的制造方法，所述方法包括步骤：
A：在下基板上依次沉积生成栅层金属总线、栅绝缘层、源漏金属总线、第一绝缘保护层；
B：在所述栅层金属总线的上方生成贯穿所述栅绝缘层和所述第一绝缘保护层的第一过孔，在所述源漏金属总线的上方生成贯穿所述第一绝缘保护层的第二过孔；
C：在所述第一绝缘保护层的上方生成连通所述第一过孔和所述第二过孔的透明电极ITO；
D：使用掩膜板在所述第一绝缘保护层和所述透明电极ITO的上方生成第二绝缘保护层；
E：使用封框胶粘接上基板和所述第二绝缘保护层，使用所述掩膜板对所述封框胶进行光照固化处理。
其中，所述步骤D具体包括步骤：
D1：在所述第一绝缘保护层和所述透明电极ITO的上方依次沉积绝缘材料和光刻胶；
D2：使用紫外光掩膜板对所述绝缘材料上的光刻胶进行曝光显影；
D3：在曝光显影后的光刻胶的保护下，对所述绝缘材料进行刻蚀生成第二绝缘保护层。
D4：剥离曝光显影后的光刻胶。
其中，所述步骤E具体包括步骤：
E1：使用封框胶粘接上基板和所述第二绝缘保护层；
E2：使用所述紫外光掩膜板对所述封框胶进行光照固化处理。
（三）有益效果
本发明所述液晶装置及其制造方法，通过在液晶装置的绝缘保护层的上方设置一层第二绝缘保护层，一方面可以有效保护金属电极免遭封框胶腐蚀，便于实现窄边框，另一方面降低了封框胶的高度，使其更易固化，减少了液晶分子被污染的概率。
附图说明
图1是现有技术液晶装置边框部分的结构示意图；
图2是本发明实施例1所述液晶装置边框部分的结构示意图；
图3是本发明实施例2所述液晶装置的制造方法流程图；
图4是所述步骤D的细化流程图；
图5是所述紫外光掩膜板的结构示意图；
图6是所述步骤E的细化流程图。
具体实施方式
下面结合附图和实施例，对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明，但不用来限制本发明的范围。
实施例1
如图2所示，该图是本发明实施例1所述液晶装置边框部分的结构示意图。
本发明实施例1所述液晶装置包括：上基板1、彩膜2、黑矩阵3、封框胶4、第二绝缘保护层5、透明电极ITO 6、第一绝缘保护层7、源漏金属总线8、栅绝缘层9、栅层金属总线10、下基板11。
所述封框胶4的上部粘接所述上基板1，下部粘接所述第二绝缘保护层5。在所述第二绝缘保护层5的下部，各层的设置与图1中现有方案相同，即在下基板11的上方依次设置有栅层金属总线10、栅绝缘层9、源漏金属总线8、第一绝缘保护层7、透明电极ITO 6；其中，在所述栅层金属总线10的上方设置有贯穿所述栅绝缘层9和所述第一绝缘保护层7的第一过孔，在所述源漏金属总线8的上方设置有贯穿所述第一绝缘保护层7的第二过孔，所述透明电极ITO 6通过所述第一过孔和所述第二过孔连接所述栅层金属总线10和所述源漏金属总线8。另外，所述第二绝缘保护层5设置在所述第一绝缘保护层7的上方，并且覆盖所述透明电极ITO 6。
其中，所述第二绝缘保护层5位于所述液晶装置的显示区域的外围。所述下基板11为阵列基板中的玻璃基板，所述上基板1为彩膜基板中的玻璃基板。
对比图1所述现有液晶装置，可以看到，本实施例所述液晶装置通过增设所述第二绝缘保护层5，可以有效避免封框胶4对所述透明电极ITO 6的腐蚀风险；同时，由于设置了所述第二绝缘保护层5，所述封框胶4可以尽可能靠近显示区域，从而有利于实现液晶装置的窄边框化；再者，所述封框胶4的下部直接与所述第二绝缘保护层5相粘接，从而减小了所述封框胶4的高度，有利于封框胶4的固化以及降低封框胶4对液晶分子的污染概率。
实施例2
如图3所示，图3是本发明实施例2所述液晶装置的制造方法流程图。
本发明实施例2所述液晶装置的制造方法包括步骤：
A：在下基板上依次沉积生成栅层金属总线、栅绝缘层、源漏金属总线、第一绝缘保护层。所述栅层金属总线、栅绝缘层、源漏金属总线、第一绝缘保护层的生成工艺与现有液晶装置的制造工艺相同，其非本发明重点，在此不再赘述。
B：在所述栅层金属总线的上方生成贯穿所述栅绝缘层和所述第一绝缘保护层的第一过孔，在所述源漏金属总线的上方生成贯穿所述第一绝缘保护层的第二过孔。
C：在所述第一绝缘保护层的上方生成连通所述第一过孔和所述第二过孔的透明电极ITO。所述透明电极ITO通过连通所述第一过孔和所述第二过孔，最终实现所述栅层金属总线和所述源漏金属总线的电连接。
D：使用紫外光掩膜板在所述第一绝缘保护层和所述透明电极ITO的上方生成第二绝缘保护层。
图4是所述步骤D的细化流程图，如图4所示，所述步骤D进一步包括步骤：
D1：在所述第一绝缘保护层和所述透明电极ITO的上方依次沉积绝缘材料和光刻胶；
D2：使用所述紫外光掩膜板对所述绝缘材料上的光刻胶进行曝光显影。
图5是所述紫外光掩膜板的结构示意图，如图5所示，所述紫外光掩膜板包括：数据线区域（Data Pad）的掩膜子板101、栅线区域（Gate Pad）的掩膜子板102，以及显示区域的掩膜子板103。图中200和300所示区域并不属于所述紫外光掩膜板，其中，200表示第二绝缘保护层对应的位置，300表示封框胶对应的位置。本步骤中，一般使用紫外光对所述绝缘材料进行曝光显影。
D3：在曝光显影后的光刻胶的保护下，对绝缘材料进行刻蚀生成第二绝缘保护层。
D4：剥离曝光显影后的光刻胶。
E：使用封框胶粘接上基板和所述第二绝缘保护层，使用所述紫外光掩膜板对所述封框胶进行光照固化处理。
图6是所述步骤E的细化流程图，如图6所示，所述步骤E具体包括步骤：
E1：使用封框胶粘接上基板和所述第二绝缘保护层；
E2：使用所述紫外光掩膜板对所述封框胶进行光照固化处理。
参见图5，所述紫外光掩膜板在所述第二绝缘保护层对应的区域为透光区域，该透光区域包含封框胶对应的区域，因此，所述紫外光掩膜板可以同时用于封框胶的光照固化过程。也就是说，本实施例所述方法在不增加掩膜板数量的情况下，在液晶装置的周边生成了所述第二绝缘保护层。
本发明实施例所述液晶装置及其制造方法，通过在液晶装置的绝缘保护层的上方设置第二绝缘保护层，一方面可以有效保护金属电极免遭封框胶腐蚀，便于实现窄边框；另一方面降低了封框胶的高度，使其更易固化，减少了液晶分子被污染的概率。同时，生成所述第二绝缘保护层所采用的掩膜板与固化封框胶所采用同一掩膜板，即上述结构上的改进并未导致掩膜板数量增加。
以上实施方式仅用于说明本发明，而并非对本发明的限制，有关技术领域的普通技术人员，在不脱离本发明的精神和范围的情况下，还可以做出各种变化和变型，因此所有等同的技术方案也属于本发明的范畴，本发明的专利保护范围应由权利要求限定。

Claims (8)

1.一种液晶装置，包括：下基板，设置在所述下基板上方的栅层金属总线、栅绝缘层、源漏金属总线、第一绝缘保护层；所述栅层金属总线与所述源漏金属总线通过透明电极ITO连接；
其特征在于，在所述第一绝缘保护层的上方设置有第二绝缘保护层，所述第二绝缘保护层覆盖所述透明电极ITO；
封框胶的下部与所述第二绝缘保护层相粘接，上部与上基板相粘接。
2.如权利要求1所述的液晶装置，其特征在于，所述第二绝缘保护层位于所述液晶装置的显示区域的外围。
3.如权利要求1所述的液晶装置，其特征在于，所述下基板为阵列基板中的玻璃基板。
4.如权利要求1所述的液晶装置，其特征在于，所述上基板为彩膜基板中的玻璃基板。
5.如权利要求1所述的液晶装置，其特征在于，所述液晶装置为窄边框液晶装置。
6.一种液晶装置的制造方法，其特征在于，所述方法包括步骤：
A：在下基板上依次沉积生成栅层金属总线、栅绝缘层、源漏金属总线、第一绝缘保护层；
B：在所述栅层金属总线的上方生成贯穿所述栅绝缘层和所述第一绝缘保护层的第一过孔，在所述源漏金属总线的上方生成贯穿所述第一绝缘保护层的第二过孔；
C：在所述第一绝缘保护层的上方生成连通所述第一过孔和所述第二过孔的透明电极ITO；
D：使用掩膜板在所述第一绝缘保护层和所述透明电极ITO的上方生成第二绝缘保护层；
E：使用封框胶粘接上基板和所述第二绝缘保护层，使用所述掩膜板对所述封框胶进行光照固化处理。
7.如权利要求6所述的方法，其特征在于，所述步骤D具体包括步骤：
D1：在所述第一绝缘保护层和所述透明电极ITO的上方依次沉积绝缘材料和光刻胶；
D2：使用紫外光掩膜板对所述绝缘材料上的光刻胶进行曝光显影；
D3：在曝光显影后的光刻胶的保护下，对所述绝缘材料进行刻蚀生成第二绝缘保护层。
D4：剥离曝光显影后的光刻胶。
8.如权利要求7所述的方法，其特征在于，所述步骤E具体包括步骤：
E1：使用封框胶粘接上基板和所述第二绝缘保护层；
E2：使用所述紫外光掩膜板对所述封框胶进行光照固化处理。
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