CN105556608B - 半导体存储装置 - Google Patents
半导体存储装置 Download PDFInfo
- Publication number
- CN105556608B CN105556608B CN201480047769.7A CN201480047769A CN105556608B CN 105556608 B CN105556608 B CN 105556608B CN 201480047769 A CN201480047769 A CN 201480047769A CN 105556608 B CN105556608 B CN 105556608B
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- bit line
- cell transistor
- semiconductor storage
- cell
- storage according
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 238000003860 storage Methods 0.000 title claims abstract description 45
- 239000000758 substrate Substances 0.000 claims description 28
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 230000005611 electricity Effects 0.000 claims description 6
- 230000015654 memory Effects 0.000 description 41
- 239000010410 layer Substances 0.000 description 30
- 238000010586 diagram Methods 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 16
- 230000005291 magnetic effect Effects 0.000 description 13
- 230000008859 change Effects 0.000 description 11
- 101100058970 Arabidopsis thaliana CALS11 gene Proteins 0.000 description 8
- 101100341076 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) IPK1 gene Proteins 0.000 description 8
- 101100203174 Zea mays SGS3 gene Proteins 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 239000004744 fabric Substances 0.000 description 6
- 230000005294 ferromagnetic effect Effects 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- 230000005415 magnetization Effects 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
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- 230000009467 reduction Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1655—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1657—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Static Random-Access Memory (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361876491P | 2013-09-11 | 2013-09-11 | |
US61/876,491 | 2013-09-11 | ||
US14/201,642 | 2014-03-07 | ||
US14/201,642 US9299409B2 (en) | 2013-09-11 | 2014-03-07 | Semiconductor storage device |
PCT/JP2014/072860 WO2015037461A1 (en) | 2013-09-11 | 2014-08-26 | Semiconductor storage device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105556608A CN105556608A (zh) | 2016-05-04 |
CN105556608B true CN105556608B (zh) | 2017-10-24 |
Family
ID=52625450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480047769.7A Active CN105556608B (zh) | 2013-09-11 | 2014-08-26 | 半导体存储装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US9299409B2 (zh) |
CN (1) | CN105556608B (zh) |
RU (1) | RU2642960C2 (zh) |
TW (1) | TWI549126B (zh) |
WO (1) | WO2015037461A1 (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102131746B1 (ko) | 2013-09-27 | 2020-07-08 | 인텔 코포레이션 | Stt-mram 사이즈와 쓰기 오류율을 최적화하기 위한 장치 및 방법 |
US9478273B2 (en) * | 2013-10-31 | 2016-10-25 | Intel Corporation | Low resistance bitline and sourceline apparatus for improving read and write operations of a nonvolatile memory |
US9967038B2 (en) * | 2014-05-16 | 2018-05-08 | Regents Of The University Of Minnesota | Optical interconnect in spin-based computation and communication systems |
KR20170034961A (ko) | 2015-09-21 | 2017-03-30 | 에스케이하이닉스 주식회사 | 전자 장치 및 그 제조 방법 |
KR102401581B1 (ko) * | 2015-10-26 | 2022-05-24 | 삼성전자주식회사 | 저항식 메모리 소자 |
KR102590306B1 (ko) * | 2016-09-06 | 2023-10-19 | 에스케이하이닉스 주식회사 | 전자 장치 및 그 제조 방법 |
JP2018147546A (ja) * | 2017-03-09 | 2018-09-20 | ソニーセミコンダクタソリューションズ株式会社 | 制御回路、半導体記憶装置、情報処理装置及び制御方法 |
KR102379706B1 (ko) | 2017-10-25 | 2022-03-28 | 삼성전자주식회사 | 가변 저항 메모리 소자 |
US10366954B1 (en) | 2018-04-25 | 2019-07-30 | Globalfoundries Inc. | Structure and method for flexible power staple insertion |
CN111179991B (zh) * | 2019-12-31 | 2022-06-03 | 清华大学 | 阻变存储阵列及其操作方法、阻变存储器电路 |
CN113823656A (zh) * | 2020-06-19 | 2021-12-21 | 长鑫存储技术有限公司 | 存储器及其形成方法、控制方法 |
KR20220049866A (ko) * | 2020-10-15 | 2022-04-22 | 에스케이하이닉스 주식회사 | 메모리셀 및 그를 구비한 반도체 장치 |
CN114639772A (zh) | 2020-12-15 | 2022-06-17 | 长鑫存储技术有限公司 | 一种半导体结构和存储电路 |
JP2022136786A (ja) | 2021-03-08 | 2022-09-21 | キオクシア株式会社 | 不揮発性記憶装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0464686A1 (en) * | 1990-07-06 | 1992-01-08 | Nec Corporation | Dynamic semiconductor memory cell |
CN1963946A (zh) * | 2005-11-09 | 2007-05-16 | 三星电子株式会社 | 具有作为开关单元的晶体管和二极管的非易失性存储器 |
Family Cites Families (31)
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SU752476A1 (ru) * | 1978-07-24 | 1980-07-30 | Предприятие П/Я А-1889 | Ячейка пам ти |
JP3386547B2 (ja) | 1994-01-26 | 2003-03-17 | 株式会社東芝 | リダンダンシ回路装置 |
US5794666A (en) * | 1995-10-02 | 1998-08-18 | Mitsubishi Jidosha Kogyo Kabushiki Kaisha | Gaseous fuel filling structure and filling method using the same |
JPH09231789A (ja) | 1996-02-21 | 1997-09-05 | Sony Corp | 半導体記憶装置 |
JP2836570B2 (ja) * | 1996-03-28 | 1998-12-14 | 日本電気株式会社 | 半導体記憶装置 |
JP4255144B2 (ja) | 1998-05-28 | 2009-04-15 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
JP3544929B2 (ja) | 2000-09-27 | 2004-07-21 | Necマイクロシステム株式会社 | 半導体記憶装置およびそのリダンダンシ回路置換方法 |
US7164167B2 (en) * | 2001-11-21 | 2007-01-16 | Sharp Kabushiki Kaisha | Semiconductor storage device, its manufacturing method and operating method, and portable electronic apparatus |
US7116593B2 (en) | 2002-02-01 | 2006-10-03 | Hitachi, Ltd. | Storage device |
JP2004023062A (ja) | 2002-06-20 | 2004-01-22 | Nec Electronics Corp | 半導体装置とその製造方法 |
JP2010093277A (ja) | 2002-06-25 | 2010-04-22 | Renesas Technology Corp | 半導体集積回路装置 |
CA2541014A1 (en) * | 2003-10-01 | 2005-04-14 | Adolor Corporation | Spirocyclic heterocyclic derivatives and methods of their use |
RU2391722C2 (ru) * | 2005-05-30 | 2010-06-10 | Сейко Эпсон Корпорейшн | Полупроводниковое запоминающее устройство |
JP4309877B2 (ja) * | 2005-08-17 | 2009-08-05 | シャープ株式会社 | 半導体記憶装置 |
JP4129274B2 (ja) * | 2006-05-18 | 2008-08-06 | シャープ株式会社 | 半導体記憶装置 |
JP4251576B2 (ja) * | 2006-07-28 | 2009-04-08 | シャープ株式会社 | 不揮発性半導体記憶装置 |
US7778063B2 (en) * | 2006-11-08 | 2010-08-17 | Symetrix Corporation | Non-volatile resistance switching memories and methods of making same |
JP2008130995A (ja) | 2006-11-24 | 2008-06-05 | Toshiba Corp | 半導体記憶装置 |
US7750421B2 (en) * | 2007-07-23 | 2010-07-06 | Magic Technologies, Inc. | High performance MTJ element for STT-RAM and method for making the same |
JP5113845B2 (ja) * | 2007-08-10 | 2013-01-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
WO2009034687A1 (ja) * | 2007-09-10 | 2009-03-19 | Panasonic Corporation | 不揮発性記憶装置および不揮発性記憶装置へのデータ書込方法 |
CN104200834A (zh) * | 2008-10-06 | 2014-12-10 | 株式会社日立制作所 | 半导体器件 |
JP2012043977A (ja) | 2010-08-19 | 2012-03-01 | Renesas Electronics Corp | 半導体装置および半導体装置の製造方法 |
CN102376737B (zh) * | 2010-08-24 | 2014-03-19 | 中芯国际集成电路制造(北京)有限公司 | 嵌入mram的集成电路及该集成电路的制备方法 |
JP2012133836A (ja) | 2010-12-20 | 2012-07-12 | Toshiba Corp | 抵抗変化型メモリ |
JP5703041B2 (ja) | 2011-01-27 | 2015-04-15 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2012204399A (ja) * | 2011-03-23 | 2012-10-22 | Toshiba Corp | 抵抗変化メモリ |
JP5677187B2 (ja) | 2011-05-09 | 2015-02-25 | 株式会社東芝 | 半導体記憶装置 |
CN103548086B (zh) * | 2011-07-06 | 2016-08-31 | 松下电器产业株式会社 | 半导体存储装置 |
KR101889317B1 (ko) * | 2011-10-28 | 2018-08-17 | 삼성전자주식회사 | 상변화 메모리 장치 및 그 제조 방법 |
KR20140108800A (ko) * | 2013-02-28 | 2014-09-15 | 에스케이하이닉스 주식회사 | 기준 컬럼, 반도체 장치 및 프로세서와 시스템 |
-
2014
- 2014-03-07 US US14/201,642 patent/US9299409B2/en active Active
- 2014-08-26 RU RU2016106676A patent/RU2642960C2/ru active
- 2014-08-26 CN CN201480047769.7A patent/CN105556608B/zh active Active
- 2014-08-26 WO PCT/JP2014/072860 patent/WO2015037461A1/en active Application Filing
- 2014-09-04 TW TW103130655A patent/TWI549126B/zh active
-
2016
- 2016-02-19 US US15/048,735 patent/US9704918B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0464686A1 (en) * | 1990-07-06 | 1992-01-08 | Nec Corporation | Dynamic semiconductor memory cell |
CN1963946A (zh) * | 2005-11-09 | 2007-05-16 | 三星电子株式会社 | 具有作为开关单元的晶体管和二极管的非易失性存储器 |
Also Published As
Publication number | Publication date |
---|---|
WO2015037461A1 (en) | 2015-03-19 |
TW201523603A (zh) | 2015-06-16 |
RU2016106676A (ru) | 2017-10-17 |
US9299409B2 (en) | 2016-03-29 |
TWI549126B (zh) | 2016-09-11 |
RU2642960C2 (ru) | 2018-01-29 |
US20150070982A1 (en) | 2015-03-12 |
US20160197120A1 (en) | 2016-07-07 |
US9704918B2 (en) | 2017-07-11 |
CN105556608A (zh) | 2016-05-04 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20170725 Address after: Tokyo, Japan Applicant after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Applicant before: Toshiba Corp. |
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GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: Kaixia Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Japanese businessman Panjaya Co.,Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20220120 Address after: Tokyo, Japan Patentee after: Japanese businessman Panjaya Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |
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TR01 | Transfer of patent right |