CN105515450A - 具有增强射频及温度均匀性的静电夹盘 - Google Patents
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Abstract
描述具有射频(RF)及温度均匀性的静电夹盘(ESC)。例如,ESC包括顶部介电层。上金属部设置于该顶部介电层之下。第二介电层设置于多个像素化的电阻式加热器之上,且所述第二介电层部分地由该上金属部所围绕。第三介电层设置于该第二介电层之下,在该第三介电层与该第二介电层之间具有边界。多个通孔设置于该第三介电层中。总线条功率分配层设置于该等多个通孔之下并且耦接于该等多个通孔。第四介电层设置于该总线条功率分配层之下,在该第四介电层与该第三介电层之间具有边界。金属底座设置于该第四介电层之下。该金属底座包括多个高功率加热器组件容纳在该金属底座中。
Description
本申请是申请日为2013年4月23日、申请号为201380021270.4、题为“具有增强射频及温度均匀性的静电夹盘”的发明专利申请的分案申请。
相关申请的交叉引用
本申请案主张2012年4月24日所申请的美国临时申请案第61/637,500号以及2013年3月8日所申请的美国临时申请案第61/775,372号的利益,该等申请案全部内容在此以引用的方式并入本文。
背景
1)领域
本发明的实施例关于半导体处理设备的领域,且具体地,关于具有增强射频及温度均匀性的静电夹盘,以及制造此种静电夹盘的方法。
2)相关技术描述
在等离子体处理腔室中,例如等离子体蚀刻或等离子体沉积腔室,腔室组件的温度通常是在处理期间要控制的重要参数。例如,基板夹具(通常称为夹盘或托架)的温度可受控制,以在处理制作方法期间将工件加热/冷却至各种受控的温度(例如为了控制蚀刻速率)。类似的,喷头/上电极、腔室衬垫、挡板、工艺配套组件、或其它组件的温度在处理制作方法期间也可受控制,以影响处理。传统上,散热器及/或热源耦接于处理腔室,以维持腔室组件的温度在所欲的温度。通常,热耦接于腔室组件的至少一热转移流体回路用来提供加热及/或冷却功率。
热转移流体回路中的长接线长度,以及与此种长接线长度有关的大的热转移流体体积对于温度控制反应时间是有害的。重点使用(Point-of-use)系统是用以减少流体回路长度/体积的一种机构。但是,物理空间局限不利地限制了此种重点使用系统的功率负载。
随着等离子体处理趋势持续地增加RF功率位准而且也增加工件直径(现在通常具有300mm,且现在正在发展450mm系统),满足快速反应时间与高功率负载两者的温度及/或RF控制与分配,在等离子体处理领域中是有利的。
附图简述
图1根据本发明的实施例例示静电夹盘(ESC)的部分的横剖面视图,静电夹盘配置来支撑晶圆或基板。
图2根据本发明的另一实施例例示各种静电夹盘的部分的横剖面视图,静电夹盘配置来支撑晶圆或基板。
图3根据本发明的另一实施例例示静电夹盘的部分的横剖面视图,静电夹盘配置来支撑晶圆或基板。
图4根据本发明的另一实施例例示静电夹盘的部分的横剖面视图,静电夹盘配置来支撑晶圆或基板。
图5A根据本发明的另一实施例例示静电夹盘的部分的横剖面视图,重点突出了等离子体喷涂配置,静电夹盘配置来支撑晶圆或基板。
图5B根据本发明的另一实施例例示静电夹盘的部分的横剖面视图,重点突出了固体陶瓷顶部配置,静电夹盘配置来支撑晶圆或基板。
图6是根据本发明的各种实施例的电性方块图,包括了用于静电夹盘(ESC)的电阻式辅助加热器的12x13配置。
图7根据本发明的实施例例示系统,在该系统中可容纳具有增强射频及温度均匀性的静电夹盘。
图8根据本发明的实施例例示示例性计算机系统的方块图。
详细描述
叙述了具有增强射频(RF)及温度均匀性的静电夹盘,以及制造此种静电夹盘的方法。在下面的叙述中,提出多种具体细节,例如具体的夹盘材料规范,以提供本发明的实施例的通盘了解。对于本领域技术人员将是显而易知的,本发明的实施例可不用这些具体细节来实践。在其它例子中,熟知的方面,例如夹盘所支撑的晶圆存在时的蚀刻处理,并未详细叙述,以避免不必要地模糊本发明的实施例。另外,可了解到,附图中显示的各种实施例是例示表示,且不需要依尺寸绘制。
在此所述的一或更多个实施例是关于具有增强射频及温度均匀性的静电夹盘,或关于包括具有增强射频及温度均匀性的静电夹盘的系统。
为了提供文章上下文,藉由静电夹盘的晶圆夹持已经在蚀刻处理期间用来提供温度控制。取决于应用,晶圆被夹持至具有散热器或加热器(或两者)的陶瓷或多层表面。因为固有的不均匀性与辅助硬件(例如,升举销、RF/DC电极等),陶瓷表面温度并非均匀。此不均匀性会转移给晶圆,影响蚀刻处理。传统的夹盘设计是注重在冷却剂布局最佳化以及引入多个(多达4区)加热器。此种夹盘设计对于解决与辅助硬件(例如,升举销、RF/DC电极等)相关的问题或由辅助硬件所导致的问题并没有用。
在实施例中,为了解决利用传统方法的上述问题,叙述了具有极佳温度均匀性的下一代(超过4区)蚀刻腔室ESC。在实施例中,如同下面更详细叙述的,在此所述的夹盘可以达成多个热要求,包括一或更多个Al2O3型的12英寸定位盘、温度性能高达130C、利用等离子体在摄氏65/65/45度时温度均匀性≦0.5C。在此所述的实施例是关于具有主动温度控制的下一代蚀刻腔室ESC。
根据本发明的各种实施例,图1-5A与图5B绘示静电(ESC)结构或其部分。
参见图1,ESC100配置来支撑晶圆或基板102。ESC的框架104可包括例如铝。等离子体喷涂涂层106(例如陶瓷层)是包括在框架104的各种表面上。包括主要加热器108,以及辅助加热器110。
参见图2,如同横剖面透视图所示,ESC部分200配置来支撑晶圆或基板202。陶瓷层204(在该陶瓷层204上将放置晶圆或基板202)设置于多个电阻式加热器元件206上(举例来说),且陶瓷层204由黏着层208固持在适当位置处。金属底座210支撑多个电阻式加热器元件206,并且可为RF加热的。也可包括选择性的夹盘电极212,如同图2所绘示。
再次参见图2,ESC的部分220具有固体陶瓷板材221,如同横剖面透视图所示,ESC的部分220是提供来例示ESC内的RF路径222与224。RF路径242另外例示在ESC的部分240B中(部分240B也可配置成如同240A所示),同样也如同图2的横剖面透视图所示。可了解到,在某些实施例中,所示的ESC部分220、240A与240B可配置成具有仅仅固体陶瓷板材的配置(如同所示),或者可包括等离子体喷涂涂层,等离子体喷涂涂层上黏着有固体陶瓷板材,如同下面相关于图5B所更详细叙述的。
参见图3,如同横剖面透视图所示,ESC300配置来支撑晶圆或基板302。介电层304(例如等离子体喷涂介电层)提供一支撑,在支撑上放置晶圆或基板302。开放区域306提供冷却通道,例如用于背侧的氦(He)冷却。介电层304设置于上金属部308之上,例如,上金属部308可提供用于RF波的波导。介电层310(例如等离子体喷涂或弧氧化层)设置于多个像素化的电阻式加热器312之上,且介电层310部分由上金属部308所围绕。额外的介电层314设置于介电层310之下,在介电层314与介电层310之间具有边界316。包括有通孔318,来将多个像素化的电阻式加热器312耦接至总线条功率分配层320。介电层322设置于总线条功率分配层320之下,在介电层314与介电层322之间具有边界324。上述特征设置于金属底座326之上。金属底座326容纳高功率加热器元件或升能器328。也可包括焊接的底部板材330,如同图3所绘示。
根据本发明的实施例,静电夹盘(ESC)具有一或更多个(高达8个)主要加热器,以提供基线温度控制。为了提供温度分配的微调,大量的辅助加热器设置于ESC表面的附近。为了减少RF相关的不均匀性,所有加热器都位于铝笼内,铝笼同时作用为RF屏蔽与RF输送路径。因此,在实施例中,可以达成具有改良的射频均匀性及/或改良的温度均匀性的蚀刻处理。
在特定实施例中,在此所述的夹盘可以达成多个温度均匀性要求,包括下述的一或更多个:(1)对于加热器布局:利用4区加热器设计来解决多个阶段之间的处理温度斜线变化、RF耦接;(2)对于机台匹配:传统的ESC/喷头/边缘HW中的微妙改变会导致局部的热/冷点与多阵列,从45个到高达169个均等的加热器是另外需要来匹配机台之间的温度不均匀。
在实施例中,相关于图3所述的ESC300可藉由先安装高功率加热器元件或升能器328进入金属底座326中来加以制造。底部板材330之后焊接至定位。介电层322之后藉由例如等离子体喷涂或弧氧化方法来加以沉积。金属层之后藉由例如网印来形成,以提供总线条功率分配层320,总线条功率分配层320可传送电流至像素化的电阻式加热器312。之后沉积介电层314,以覆盖介电层324。通孔洞之后形成在介电层314中,以曝露总线条功率分配层320。之后执行金属沉积来充填通孔洞,形成通孔318。替代地,通孔318可在形成像素化的电阻式加热器312的同时被充填。之后沉积介电层310,随后沉积上金属部308。上金属部308被形成来提供金属底座的边缘。之后形成介电层304,以覆盖所有上述的层。选择性地,多个特征可机械加工进入介电层304中,以修改与ESC300的晶圆接口。
参见图4,如同横剖面透视图所示,ESC部分400配置来支撑晶圆或基板。ESC400的顶部介电层或特征可藉由例如包括沉积的介电层(例如Al2O3)402A来提供,例如藉由等离子体喷涂来包括介电层402A。替代地,或额外地,可包括介电板材402B(例如Al2O3板材)。两种选择都绘示在图4中。金属底座404(例如铝(Al)底座)包括在介电层402A及/或介电板材402B之下。狭缝406可包括在金属底座404中,以提供热中断。缆线加热器408可容纳在金属底座404中。金属底座404可另外包括到冷却底座的路径,如同图4所绘示。
根据本发明的实施例,图5A绘示ESC部分500A,如同横剖面透视图所示,重点突出了等离子体喷涂配置。ESC部分500A包括金属底座部分502,例如铝底座,在金属底座部分502上设置有等离子体喷涂介电层504。等离子体喷涂层可包括介电材料,例如(但不限于)氧化铝(Al2O3)、氧化钇(Y2O3)或高性能材料(HPM,highperformancematerial)。多孔插座506设置于金属底座部分502中,且多孔插座506提供用于晶圆或基板冷却的路径508,例如藉由氦流动来冷却。路径508设置通过等离子体喷涂介电层504。
根据本发明的实施例,图5B绘示ESC部分500B,如同横剖面透视图所示,重点突出了固体陶瓷顶部配置。ESC部分500B包括金属底座部分552,例如铝底座。固体陶瓷顶部554(例如Al2O3板材)设置于金属底座部分552之上。在一实施例中,固体陶瓷顶部554设置于等离子体喷涂介电层560之上,如同图5B所绘示。等离子体喷涂介电层560可包括介电材料,例如(但不限于)氧化铝(Al2O3)、氧化钇(Y2O3)或高性能材料(HPM)。在该实施例中,固体陶瓷顶部554可藉由黏着层562而耦接于等离子体喷涂介电层560。多孔插座556设置于金属底座部分552中,且多孔插座556提供用于晶圆或基板冷却的路径558,例如藉由氦流动来冷却。路径558设置通过固体陶瓷顶部554,以及等离子体喷涂介电层560(如果存在的话)。
在实施例中,在此所述的夹盘的机械方面包括ESC本身、重新设计给额外的24-26个滤波器的阴极组件、电性与RF滤波器、至辅助加热器的功率传送系统。在实施例中,在此所述的夹盘的通讯/切换逻辑方面包括与现有硬件的接口。在实施例中,在此所述的夹盘的软件方面包括与I-4温度数据的接口,及/或与电性次组件的通讯。在实施例中,在此所述的夹盘的主要加热器包括双区加热器。在实施例中,在此所述的夹盘的功率要求利用辅助加热器来解决。
在实施例中,在此所述的夹盘的ESC型方面包括一或更多个下述:库伦的(coulombic)、大约92%的铝复合物、薄陶瓷、可能是可交换/可消耗、接地的冷却板材(具有RF加热的夹持电极及/或印刷RF电极)。在实施例中,最大RF功率的规格是最大大约2kW且大约13.56MHz。在实施例中,最大氦气压力的规格是大约10Torr。在实施例中,针对引脚至电极接口,RF电流限制要符合每一引脚大约20A。在实施例中,内部/外侧加热器电阻大约在90C,130C,25A,160V,150C(内部)13A,150V,150C(外侧)。
在实施例中,在此所述的夹盘的辅助加热器包括大约45个加热器,且最高达144-169个(12x12或13x13的配置)。以大约92%铝、最小局部1C加热、最大4℃加热以及45个加热器的加热器的评估功率是大约3W(高纯度为4W),因为加热器之间有6℃差异。在实施例中,反馈包括2个传感器,来用于双区主要加热器。在实施例中,RF滤波是根据每个加热器平均3W、DC294V、169个加热器(~168Ω)总共1.75Amp。作为范例,图6为根据本发明的实施例的电性方块图600。参见图6,提供电阻式辅助加热器的12x13配置602作为范例。
具有增强射频及温度均匀性的静电夹盘可包括在适于提供蚀刻等离子体至用于蚀刻的样本附近的处理设备中。例如,根据本发明的实施例,图7例示一种系统,该系统中可容纳具有增强射频及温度均匀性的静电夹盘。
参见图7,用于实行等离子体蚀刻处理的系统700包括腔室702,腔室702配备有样本夹具704。排气装置706、气体进入装置708、与等离子体点火装置710耦接于腔室702。运算装置712耦接于等离子体点火装置710。系统700可额外包括耦接于样本夹具704的电压源714以及耦接于腔室702的侦测器716。运算装置712也可耦接于排气装置706、气体进入装置708、电压源714以及侦测器716,如同图7所绘示。
腔室702与样本夹具704可包括反应腔室与样本定位装置,反应腔室适于包含离子化气体(亦即等离子体),且样本定位装置将样本带至靠近于离子化气体或从离子化气体射出的带电种。排气装置706可为适于将腔室702排气与去压力的装置。气体进入装置708可为适于将反应气体射入腔室702中的装置。等离子体点火装置710可为适于将从反应气体获得的等离子体加以点火的装置,反应气体是由气体进入装置708射入至腔室702中。侦测装置716可为适于侦测处理操作的结束点的装置。在一实施例中,系统700包括腔室702、样本夹具704、排气装置706、气体进入装置708、等离子体点火装置710以及侦测器716,相似于或相同于AppliedAdvantEdge系统上所使用的导体蚀刻腔室或相关腔室。
本发明的实施例可提供作为计算机程序产品或软件,计算机程序产品或软件可包括机器可读取媒体,机器可读取媒体上面有储存指令,该等指令可用于编程计算机系统(或其它电子装置),以执行根据本发明的程序。机器可读取媒体包括任何用于以机器(例如计算机)可读取的形式来储存或传送信息的机制。例如,机器可读取(例如,计算机可读取)媒体包括机器(例如计算机)可读取储存媒体(例如,只读存储器(ROM)、随机存取存储器(RAM)、磁盘储存媒体、光学储存媒体、闪存装置等)、机器(例如计算机)可读取传送媒体(电性、光学、声学或其它形式的传送信号(例如,红外线信号、数字信号等))等。
图8例示以计算机系统800的示例性形式的机器的图标表示,在机器内可执行指令集,以使机器执行在此所述的任何一或更多个方法。在替代的实施例中,机器可连接至(例如以网络连接至)局域网络(LAN,LocalAreaNetwork)、内联网络、外联网络、或因特网中的其它机器。该机器可操作有在客户端-服务器网络环境中的服务器或客户端机器的性能,或者操作作为对等(或分布式)网络环境中的对等方机器。该机器可为个人计算机(PC)、平板PC、机上盒(STB,set-topbox)、个人数字助理(PDA)、手机、上网设备、服务器、网络路由器、交换器或桥接器、或者任何可以(序列地或其它方式)执行指令集的机器,该指令集界定该机器所进行的动作。另外,虽然仅例示单一机器,用语“机器”也应该当成是包括任何大量的机器(例如计算机),该等机器个别地或联合地执行指令集(或多个指令集),以执行在此所述的任何一或更多个方法。在一实施例中,计算机系统800适于使用作为相关于图7所述的运算装置712。
示例性计算机系统800包括处理器802、主要存储器804(例如,只读存储器(ROM)、闪存、动态随机存取存储器(DRAM)(例如同步DRAM(SDRAM)或RambusDRAM(RDRAM)等)、静态存储器806(例如,闪存、静态随机存取存储器(SRAM)等)、以及次要存储器818(例如,数据储存装置),这些组件透过总线830来彼此通讯。
处理器802代表一或更多个通用目的处理装置,例如微处理器、中央处理单元、或类似者。更具体地,处理器802可为复杂指令集运算(CISC,complexinstructionsetcomputing)微处理器、精简指令集运算(RISC,reducedinstructionsetcomputing)微处理器、超长指令字(VLIW,verylonginstructionword)微处理器、实施其它指令集的处理器、或实施多个指令集的组合的处理器。处理器802也可为一或更多个特殊目的处理装置,例如专用集成电路(ASIC)、现场可编程门阵列(FPGA)、数字信号处理器(DSP)、网络处理器、或类似者。处理器802是配置来执行用于执行在此所述的操作的处理逻辑826。
计算机系统800可另外包括网络接口装置808。计算机系统800也可包括视频显示单元810(例如,液晶显示器(LCD)或阴极射线管(CRT))、文字数字输入装置812(例如键盘)、光标控制装置814(例如鼠标)、以及信号产生装置816(例如扬声器)。
次要存储器818可包括机器可存取储存媒体(或更具体地,计算机可读取储存媒体)831,机器可存取储存媒体831上面储存有一或更多个指令集(例如软件822),该等指令集可体现在此所述的任何一或更多个方法或功能。在计算机系统800执行软件822的期间,软件822也可(全部或至少部分地)储存在主要存储器804及/或处理器802内,主要存储器804及处理器802也构成机器可读取储存媒体。软件822可另外透过网络接口装置808经由网络820来传送或接收。
虽然机器可存取储存媒体831在示例性实施例中是显示为单一媒体,用语“机器可读取储存媒体”应该当成是包括储存有一或更多个指令集的单一媒体或多个媒体(例如,集中式或分布式数据库,及/或相关的高速缓存器与服务器)。用语“机器可读取储存媒体”也应该当成是包括可以储存或编码指令集来给机器执行,并且导致机器执行本发明的任何一或更多个方法的任何媒体。用语“机器可读取储存媒体”因此应该当成是包括(但不限于)固态存储器、以及光学与磁性媒体。
因此,已经揭露具有增强射频及温度均匀性的静电夹盘,以及制造此种静电夹盘的方法。在实施例中,具有增强射频及温度均匀性的静电夹盘(ESC)包括顶部介电层。上金属部设置于该顶部介电层之下。第二介电层设置于多个像素化的电阻式加热器之上,且该第二介电层部分地由上金属部所围绕。第三介电层设置于第二介电层之下,在第三介电层与第二介电层之间具有边界。多个通孔设置于第三介电层中。总线条功率分配层设置于多个通孔之下并且耦接于多个通孔。多个通孔将多个像素化的电阻式加热器耦接于总线条功率分配层。第四介电层设置于总线条功率分配层之下,在第四介电层与第三介电层之间具有边界。金属底座设置于第四介电层之下。金属底座包括多个高功率加热器元件容纳在该金属底座中。
Claims (20)
1.一种控制基板的温度的方法,所述方法包括以下步骤:
将功率提供至一个或多个高功率加热器,所述一个或多个高功率加热器被包括在支撑所述基板的静电夹盘(ESC)中;
将功率提供至多个像素化的电阻式加热器中的一个或多个像素化的电阻式加热器,所述多个像素化的电阻式加热器被包括在所述ESC中;以及
当将功率提供至所述一个或多个高功率加热器以及提供至所述多个像素化的电阻式加热器中的所述一个或多个像素化的电阻式加热器时,在包括所述ESC的腔室中处理所述基板。
2.如权利要求1所述的方法,其特征在于,将功率提供至所述多个像素化的电阻式加热器中的所述一个或多个像素化的电阻式加热器的步骤包括以下步骤:将功率提供至所述ESC的总线条功率分配层。
3.如权利要求1所述的方法,其特征在于,所述多个像素化的电阻式加热器包括在45个与169个之间的像素化的电阻式加热器。
4.如权利要求1所述的方法,其特征在于,将功率提供至所述一个或多个高功率加热器的步骤包括以下步骤:将功率提供至在1个与约8个之间的高功率加热器。
5.如权利要求1所述的方法,其特征在于,在所述腔室中处理所述基板的步骤包括以下步骤:在等离子体蚀刻腔室中处理所述基板。
6.如权利要求1所述的方法,其特征在于,在所述腔室中处理所述基板的步骤包括以下步骤:在等离子体沉积腔室中处理所述基板。
7.如权利要求1所述的方法,其特征在于,处理所述基板的步骤包括以下步骤:使用夹盘电极将所述基板固持至所述ESC。
8.如权利要求1所述的方法,其特征在于,将功率提供至所述多个像素化的电阻式加热器中的所述一个或多个像素化的电阻式加热器的步骤包括以下步骤:将功率提供至设置在所述基板与所述ESC的所述一个或多个高功率加热器之间的像素化的电阻式加热器。
9.如权利要求1所述的方法,其特征在于,进一步包括以下步骤:
当在所述腔室中处理所述基板时,冷却所述ESC的多个区域。
10.一种静电夹盘(ESC),包括:
顶部介电层,所述顶部介电层用于支撑所述顶部介电层上方的基板;
多个像素化的电阻式加热器,所述多个像素化的电阻式加热器设置在所述顶部介电层下方,所述多个像素化的电阻式加热器包括在45个与169个之间的像素化的电阻式加热器;以及
一个或多个高功率加热器,所述一个或多个高功率加热器设置在所述多个像素化的电阻式加热器下方。
11.如权利要求10所述的ESC,其特征在于,所述顶部介电层包括设置在所述顶部介电层上的多个表面特征。
12.如权利要求11所述的ESC,其特征在于,所述顶部介电层的所述表面特征提供用于所述ESC的冷却通道。
13.如权利要求10所述的ESC,其特征在于,所述顶部电介层包括喷涂介电材料。
14.如权利要求10所述的ESC,其特征在于,所述顶部介电层用于在所述顶部介电层上直接支撑所述基板。
15.如权利要求10所述的ESC,其特征在于,进一步包括:
固体陶瓷板材,所述固体陶瓷板材设置在所述顶部介电层上。
16.如权利要求15所述的ESC,其特征在于,所述固体陶瓷板材被配置来支撑所述固体陶瓷板材上的所述基板。
17.如权利要求10所述的ESC,其特征在于,进一步包括:
夹持电极,所述夹持电极用于将所述基板夹持至所述ESC。
18.如权利要求10所述的ESC,其特征在于,进一步包括:
总线条功率分配层,所述总线条功率分配层用于将功率提供至所述多个像素化的电阻式加热器。
19.一种等离子体蚀刻腔室,包括如权利要求10所述的ESC。
20.一种等离子体沉积腔室,包括如权利要求10所述的ESC。
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KR20160006239A (ko) | 2016-01-18 |
US20130279066A1 (en) | 2013-10-24 |
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TWI509732B (zh) | 2015-11-21 |
TW201401426A (zh) | 2014-01-01 |
KR101958018B1 (ko) | 2019-03-13 |
JP5938140B2 (ja) | 2016-06-22 |
KR20180064569A (ko) | 2018-06-14 |
WO2013163220A1 (en) | 2013-10-31 |
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CN105515450B (zh) | 2020-02-18 |
US8937800B2 (en) | 2015-01-20 |
CN104247002A (zh) | 2014-12-24 |
JP2016146487A (ja) | 2016-08-12 |
KR101584538B1 (ko) | 2016-01-12 |
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