CN111213230B - 试料保持器具 - Google Patents

试料保持器具 Download PDF

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CN111213230B
CN111213230B CN201880067290.8A CN201880067290A CN111213230B CN 111213230 B CN111213230 B CN 111213230B CN 201880067290 A CN201880067290 A CN 201880067290A CN 111213230 B CN111213230 B CN 111213230B
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古川直树
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Kyocera Corp
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    • B23Q3/00Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15Devices for holding work using magnetic or electric force acting directly on the work
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01ELECTRIC ELEMENTS
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    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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Abstract

试料保持器具具备:基体,其具有陶瓷,并在上表面具有试料保持面;支承体,其具有金属,且上表面覆盖所述基体的下表面;以及第一接合层,其将所述基体的下表面与所述支承体的上表面接合,所述试料保持器具具有第一贯通孔,所述第一贯通孔从所述支承体的下表面穿过所述第一接合层而贯通到所述基体的上表面,并且所述第一贯通孔在所述基体中的至少一部分中比在所述支承体中以及所述第一接合层中细,所述试料保持器具具备多孔质构件,所述多孔质构件位于所述第一贯通孔的内部,并经由第二接合层而接合于所述基体的下表面。

Description

试料保持器具
技术领域
本发明涉及试料保持器具。
背景技术
作为用于半导体制造装置等的试料保持器具,例如,已知有日本特表2015-517225号公报(以下,设为专利文献1)所记载的静电夹紧件。专利文献1所记载的静电夹紧件具备电介质层和设置于电介质层的下方的金属基部。在金属基部设置有晶片冷却用的贯通孔,在贯通孔的内部设置有多孔质构件。
发明内容
本发明的试料保持器具具备:基体,其具有陶瓷,并在上表面具有试料保持面;支承体,其具有金属,且上表面覆盖所述基体的下表面;以及第一接合层,其将所述基体的下表面与所述支承体的上表面接合,所述试料保持器具具有第一贯通孔,所述第一贯通孔从所述支承体的下表面穿过所述第一接合层而贯通到所述基体的上表面,并且所述第一贯通孔在所述基体中的至少一部分中比在所述支承体中以及所述第一接合层中细,所述试料保持器具具备多孔质构件,所述多孔质构件位于所述第一贯通孔的内部,并经由第二接合层而接合于所述基体的下表面。
附图说明
图1是示出试料保持器具的一例的俯视图。
图2是以A-A线剖切图1所示的试料保持器具而得到的剖视图。
图3是放大图2所示的试料保持器具中的区域B而得到的局部剖视图。
图4是示出试料保持器具的其他例子的局部剖视图。
图5是示出试料保持器具的其他例子的局部剖视图。
图6是示出试料保持器具的其他例子的局部剖视图。
图7是示出试料保持器具的其他例子的局部剖视图。
图8是示出试料保持器具的其他例子的局部剖视图。
图9是示出试料保持器具的其他例子的局部剖视图。
具体实施方式
以下,参照附图对试料保持器具100进行说明。
如图1、2所示,试料保持器具100具备基体1、支承体2、第一接合层3、第二接合层4、以及多孔质构件5。在本例中,试料保持器具100还具备吸附电极6。试料保持器具100例如为静电夹紧件。试料保持器具100例如以在比试料保持面14靠上方处产生等离子体的方式使用。例如,通过在外部的多个电极之间施加高频而激励位于电极间的气体,由此能够产生等离子体。
基体1是圆板状的构件。基体1的上表面是保持试料的试料保持面14。基体1在上表面的试料保持面14上例如保持硅晶片等试料。基体1例如具有陶瓷材料。作为陶瓷材料,例如具有氧化铝、氮化铝、氮化硅或者氧化钇等陶瓷材料。对于基体1的尺寸,例如能够将直径设定为200~500mm,将厚度设定为2~15mm。
作为使用基体1来保持试料的方法,能够使用各种各样的方法。本例的试料保持器具100通过静电力来保持试料。因此,试料保持器具100在基体1的内部具备吸附电极6。吸附电极6具有两个电极。两个电极的一方与电源的正极连接,另一方与负极连接。两个电极分别呈大致半圆板状,且以半圆的弦彼此对置的方式位于基体1的内部。组合上述两个电极,而使吸附电极6整体的外形呈圆形形状。由该吸附电极6的整体形成的圆形形状的外形的中心能够与同样呈圆形形状的陶瓷体的外形的中心设定为相同。吸附电极6例如具有金属材料。作为金属材料,例如具有铂、钨或者钼等金属材料。
支承体2是用于支承基体1的构件。支承体2例如是圆板状的构件。支承体2例如具有金属材料。作为金属材料,例如能够使用铝。支承体2与基体1经由第一接合层3而接合。具体而言,支承体2的上表面与基体1的下表面通过第一接合层3而接合。作为第一接合层3,例如能够使用树脂材料。作为树脂材料,例如能够使用硅酮粘接剂。
如图2、3所示,基体1、第一接合层3以及支承体2具有第一贯通孔7。第一贯通孔7例如被设置用于使氮气等气体流入试料保持面14侧。第一贯通孔7从支承体2的下表面穿过第一接合层3而贯通到基体1的上表面。第一贯通孔7在基体1的至少一部分中比在支承体2中以及第一接合层3中细。在本例的试料保持器具100中,第一贯通孔7是从支承体2的下表面朝向上表面、从第一接合层3的下表面朝向上表面而直径恒定的圆柱状。另外,第一贯通孔7在基体1中具有位于基体1的下表面的圆柱状的第一凹部8以及在第一凹部8的底面和基体1的上表面开口的圆柱状的第二贯通孔9。
多孔质构件5被设置用于在比试料保持面14靠上方处产生等离子体时,使等离子体不会穿过第一贯通孔7而进入到支承体2侧。作为多孔质构件5,例如能够使用氧化铝等陶瓷材料。多孔质构件5位于第一贯通孔7的内部。多孔质构件5经由第二接合层4而与基体1的下表面接合。具体而言,第二接合层4以没有封堵基体1的第二贯通孔9的方式将基体1的下表面与多孔质构件5接合。换言之,第二接合层4例如具有与第二贯通孔9连续、并且贯通至第二接合层4的上表面和下表面的孔。
多孔质构件5具有能够使气体从上表面向下表面流动的程度的气孔率。因此,通过使多孔质构件5配置于第一贯通孔7的内部,而使气体在第一贯通孔7流动,并且降低等离子体到达支承体2侧的可能性。作为多孔质构件5的气孔率,例如能够设定为40~60%。
第二接合层4是用于将多孔质构件5与基体1的下表面接合的构件。作为第二接合层4,例如能够使用树脂材料或者玻璃材料。特别是,第二接合层4设置于有可能与等离子体接触的区域,因此也可以使用耐等离子体性高的材料。具体而言,能够使用添加有氧化钙或者氧化钇等的玻璃材料。另外,也能够使用氟树脂。
在本例的试料保持器具100中,多孔质构件5经由第二接合层4而与基体1的下表面接合。由此,能够填充多孔质构件5与基体1之间的间隙,因此能够降低穿过多孔质构件5与基体1之间而产生逆弧的可能性。
另外,如图3所示,也可以是,基体1中的第一贯通孔7具有位于基体1的下表面的第一凹部8以及在第一凹部8的底面和基体1的上表面开口的第二贯通孔9,并且在第一凹部8的底面与多孔质构件5接合。通过将多孔质构件5与第一凹部8的底面接合,能够使多孔质构件5的上表面向上方远离支承体2。由此,能够延长多孔质构件5的上表面与支承体2之间的绝缘距离。其结果是,能够降低穿过多孔质构件5的上表面而在支承体2与贯通孔之间产生逆弧的可能性。
多孔质构件5的上表面也可以位于第一凹部8的内部。换言之,多孔质构件5的上表面也可以位于比基体1的下表面靠上方的位置。由此,能够进一步延长多孔质构件5的上表面与支承体2之间的绝缘距离。其结果是,能够进一步降低产生逆弧的可能性。
另外,也可以是,试料保持器具100还具备绝缘性的筒状构件10,筒状构件10位于第一贯通孔7的内部,覆盖多孔质构件5的下表面的一部分以及外周面的至少一部分,并且沿着第一贯通孔7延伸。由此,能够降低在第一贯通孔7中的位于多孔质构件5的下方的区域与支承体2之间产生逆弧的可能性。
作为筒状构件10,例如能够使用陶瓷材料。作为陶瓷材料,例如可举出氧化铝或者氮化铝。筒状构件10在内周面具有台阶。换言之,筒状构件10具有在上端处内径扩大的形状。由此,能够将筒状构件10与多孔质构件5嵌合。
另外,如图4所示,也可以是,在筒状构件10中,与多孔质构件5的下表面接触的面的内径比下端的内径大。由此,在气体从简状构件10的内侧穿过多孔质构件5而向试料保持面14侧流动时,能够使气体的流动顺畅。其结果是,能够提升多孔质构件5以及筒状构件10的长期可靠性。
另外,如图5所示,也可以是,多孔质构件5以及第二接合层4具有第二凹部11,第二凹部11的内周面与第一贯通孔7中的位于基体1的部分连续。通过使多孔质构件5具有第二凹部11,能够增大与第一贯通孔7中的位于基体1的部分相连的多孔质构件5的表面积。因此,能够使气体从多孔质构件5向第一贯通孔7中的位于基体1的部分顺畅地流动。
另外,如图6所示,也可以是,还具有第三凹部12,第三凹部12从基体1的上表面穿过第二接合层4而延伸到多孔质构件5。由此,在使气体从多孔质构件5向试料保持面14侧流动时,能够分散压力。因此,能够进一步使气体顺畅地流动。第三凹部12可以仅设置一个,也可以设置多个。
另外,如图7所示,也可以是,筒状构件10的上端位于比多孔质构件5的上表面靠上方的位置。由此,筒状构件10位于多孔质构件5的上端面与支承体2之间,因此能够降低经由多孔质构件5的上端面向支承体2产生逆弧的可能性。
另外,如图8所示,也可以是,在筒状构件10与支承体2之间还具有第三接合层13。作为第三接合层13,例如能够使用硅酮树脂或者环氧树脂等树脂材料。通过具有第三接合层13,能够降低在热循环下在筒状构件10与支承体2之间产生热应力而在筒状构件10产生位置偏移的可能性。
如图9所示,也可以是,多孔质构件5的整体位于第一凹部8的内部。换言之,也可以是,多孔质构件5的下表面位于比第一凹部8的开口面靠上方的位置,或者多孔质构件5的下表面与第一凹部8的开口面位于同一平面上。由此,能够使多孔质构件5难以受到支承体2的热膨胀的影响。其结果是,能够提升试料保持器具100的长期可靠性。
并且,此时,多孔质构件5与筒状构件10也可以分离地配置。由此,能够降低在筒状构件10与多孔质构件5之间产生热应力的可能性。其结果是,能够提升试料保持器具100的长期可靠性。
附图标记说明:
1:基体
2:支承体
3:第一接合层
4:第二接合层
5:多孔质构件
6:吸附电极
7:第一贯通孔
8:第一凹部
9:第二贯通孔
10:筒状构件
11:第二凹部
12:第三凹部
13:第三接合层
100:试料保持器具。

Claims (8)

1.一种试料保持器具,其具备:
基体,其具有陶瓷,并在上表面具有试料保持面;
支承体,其具有金属,且上表面覆盖所述基体的下表面;以及
第一接合层,其将所述基体的下表面与所述支承体的上表面接合,
所述试料保持器具具有第一贯通孔,所述第一贯通孔从所述支承体的下表面穿过所述第一接合层而贯通到所述基体的上表面,并且所述第一贯通孔在所述基体中的至少一部分中比在所述支承体中以及所述第一接合层中细,
所述试料保持器具具备多孔质构件,所述多孔质构件位于所述第一贯通孔的内部,并经由第二接合层而接合于所述基体的下表面,
所述试料保持器具还具备绝缘性的筒状构件,所述筒状构件位于所述第一贯通孔的内部,且覆盖所述多孔质构件的下表面的一部分以及外周面的至少一部分,并且沿着所述第一贯通孔而延伸。
2.根据权利要求1所述的试料保持器具,其中,
所述基体中的所述第一贯通孔具有位于所述基体的下表面的第一凹部以及在所述第一凹部的底面和所述基体的上表面开口的第二贯通孔,并且所述多孔质构件接合于所述第一凹部的底面。
3.根据权利要求1所述的试料保持器具,其中,
在所述筒状构件中,与所述多孔质构件的下表面接触的面的内径比下端的内径大。
4.根据权利要求1至3中任一项所述的试料保持器具,其中,
所述多孔质构件以及所述第二接合层具有第二凹部,所述第二凹部的内周面与所述第一贯通孔中的位于所述基体的部分连续。
5.根据权利要求1至3中任一项所述的试料保持器具,其中,
所述试料保持器具还具有第三凹部,所述第三凹部从所述基体的所述上表面穿过所述第二接合层而延伸到所述多孔质构件。
6.根据权利要求1所述的试料保持器具,其中,
所述筒状构件的上端位于比所述多孔质构件的上表面靠上方的位置。
7.根据权利要求2所述的试料保持器具,其中,
所述多孔质构件的整体位于所述第一凹部的内部。
8.根据权利要求1所述的试料保持器具,其中,
所述多孔质构件与所述筒状构件分离地配置。
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